Abstract: To provide a photoelectric conversion element capable of further improving performance in a photoelectric conversion element using an organic semiconductor material. The photoelectric conversion element includes a first electrode and a second electrode arranged to face each other, and a photoelectric conversion layer 17 provided between the first electrode and the second electrode, in which the photoelectric conversion layer 17 includes a first organic semiconductor material and a second organic semiconductor material, and at least one of the first organic semiconductor material or the second organic semiconductor material is an organic molecule having a HOMO volume fraction of 0.15 or less or a LUMO volume fraction of 0.15 or less.

Abstract: A method for fabricating a semiconductor device is described that includes forming a base layer over a top layer of a substrate, the base layer includes a silicon based dielectric having a thickness less than or equal to 5 nm and greater than or equal to 0.5 nm; forming a photoresist layer over the base layer, the photoresist including a first side and an opposite second side; exposing a first portion of the photoresist layer to a pattern of extreme ultraviolet (EUV) radiation from the first side; exposing a second portion of the photoresist layer with a pattern of electron flux from the second side, the electron flux being directed into the photoresist layer from the base layer in response to the EUV radiation; developing the exposed photoresist layer to form a patterned photoresist layer; and transferring the pattern of the patterned photoresist layer to the base layer and the top layer.

Abstract: A water electrolysis cell includes a separator having, on its front and back, grooves serving as channels. The separator has, in its ends in a planar direction, an oxygen electrode- side supply hole, an oxygen electrode-side discharge hole, a hydrogen electrode-side supply hole, a hydrogen electrode-side discharge hole, an inter-cell channel supply hole, and an inter-cell channel discharge hole, as viewed in plan. A sealing member surrounding the oxygen electrode-side supply hole and a sealing member surrounding the oxygen electrode- side discharge hole, as viewed in plan, are located in the separator, but no sealing members are located around the hydrogen electrode-side supply hole, the hydrogen electrode-side discharge hole, the inter-cell channel supply hole, and the inter-cell channel discharge hole.

Abstract: The present invention provides a program, an information processing system, and an information processing method capable of increasing the diversity of rewards that can be obtained when game mediums are consumed, thus making it possible to attract a player's interest. The content of a reward that can be obtained when a character that satisfies a recruitment condition(s) set for each mission is consumed is set on the basis of the status linked with the character, and the content of a reward for a character that is specified as a consumption target is displayed in a character selection screen that serves as an input interface for accepting an input for specifying a character as a consumption target.

Abstract: An object of the present invention is to provide a catalyst that enables production of an unsaturated carboxylic acid and/or unsaturated carboxylic acid ester represented by methyl methacrylate with high selectivity. The object is achieved by a catalyst including: one or more elements selected from boron, magnesium, zirconium, hafnium, and titanium; one or more elements selected from alkali metal elements; and silica; the catalyst having a peak height ratio I2/I1 of 0 to 1.2, wherein I1 represents the peak height at 417±10 cm?1, and I2 represents the peak height at 1050±10 cm?1, as obtained by Raman spectroscopy.

Abstract: A method for fabricating a semiconductor device is described that includes forming a base layer over a top layer of a substrate, the base layer includes a silicon based dielectric having a thickness less than or equal to 5 nm and greater than or equal to 0.5 nm; forming a photoresist layer over the base layer, the photoresist including a first side and an opposite second side; exposing a first portion of the photoresist layer to a pattern of extreme ultraviolet (EUV) radiation from the first side; exposing a second portion of the photoresist layer with a pattern of electron flux from the second side, the electron flux being directed into the photoresist layer from the base layer in response to the EUV radiation; developing the exposed photoresist layer to form a patterned photoresist layer; and transferring the pattern of the patterned photoresist layer to the base layer and the top layer.

Abstract: A power generation element includes a magnetic member that produces a large Barkhausen effect and magnetism collection members including an insertion part having the magnetic member inserted therethrough. The magnetism collection member includes a first component on an opposite side of a boundary plane to a magnetic field generation unit and a second component on the same side of the boundary plane as the magnetic field generation unit, the boundary plane passing through a center of an imaginary circle inscribed in the insertion part and having a diameter equal to a length of the insertion part in a third direction perpendicular to first and second directions, the first direction is a direction of the insertion of the magnetic member, and the second direction is a direction in which the magnetic field generation unit is disposed. A volume of the second component is larger than a volume of the first component.

Abstract: Provided is an abnormality detection system that includes a first controller configured to control a substrate processing apparatus and a second controller configured to control a device provided in the substrate processing apparatus according to an instruction from the first controller, thereby detecting an abnormality in the device. The second controller includes a storage unit configured to collect status signals for the device for a predetermined time and at a predetermined sampling interval in a predetermined cycle and accumulate the collected status signals for the device, and the first controller includes an abnormality determination unit configured to acquire the accumulated status signals for the device from the second controller at a time interval equal to or longer than the predetermined time, and determine presence or absence of an abnormality in the device.

Abstract: A film forming method according to an aspect of the present disclosure is a film forming method of embedding a film in a recess formed in a surface of a substrate, and includes a first processing including (a) adsorbing a raw material gas into the recess, (b) forming a film by reacting a reaction gas with the raw material gas, and (c) activating a plasma generation gas including a hydrogen gas and a noble gas by plasma and supplying the gas into the recess to shrink the film. A plurality of cycles each including (a) and (b) are executed, and at least a part of the plurality of cycles includes (c).

Abstract: A film forming method for forming a metal carbide film on a substrate, includes: forming a metal carbide film including a first metal element and a second metal element different from the first metal element on the substrate by performing, multiple times in a time-sharing manner: supplying a first precursor gas including the first metal element and not including carbon to the substrate; supplying a second precursor gas including the second metal element and including carbon to the substrate; and supplying a reducing agent to the substrate, wherein concentrations of the first metal element and the second metal element included in the metal carbide film are controlled by adjusting the order of the supplying the first precursor gas, the supplying the second precursor gas, and the supplying the reducing agent.

Abstract: A filling method according to one aspect of the present disclosure is a method of filling a recess formed in a surface of a substrate with a metal oxide film. The method includes forming the metal oxide film by supplying a metallic raw material gas and an oxidant to the recess, and etching a part of the metal oxide film by supplying an etching gas including at least one selected from a group including SOCl2 and (COCl)2 to the metal oxide film.

Abstract: A film forming method of forming a metal-containing aluminum oxide layer on a substrate having at least a metal layer on a surface thereof includes: a first operation of forming an aluminum oxide layer on the substrate with an aluminum-containing precursor and an oxidant; and a second operation of forming a metal oxide layer on the substrate with the oxidant and a precursor including a first metal other than aluminum. Assuming that a dielectric constant of only an oxide of the first metal is ?1 and a molar ratio of the first metal to all metals in the metal-containing aluminum oxide layer is X, the formed metal-containing aluminum oxide layer satisfies a following condition (1) or (2): X>? and ?1<25×X/(3X?1) . . . (1); and X??. . . (2).

Abstract: A method for fabricating a semiconductor device is described that includes forming a base layer over a top layer of a substrate, the base layer includes a silicon based dielectric having a thickness less than or equal to 5 nm and greater than or equal to 0.5 nm; forming a photoresist layer over the base layer, the photoresist including a first side and an opposite second side; exposing a first portion of the photoresist layer to a pattern of extreme ultraviolet (EUV) radiation from the first side; exposing a second portion of the photoresist layer with a pattern of electron flux from the second side, the electron flux being directed into the photoresist layer from the base layer in response to the EUV radiation; developing the exposed photoresist layer to form a patterned photoresist layer; and transferring the pattern of the patterned photoresist layer to the base layer and the top layer.

Abstract: There is provided a method of performing a surface processing on a substrate having a metal layer formed on a bottom portion of a recess formed in an insulating film, the method including: supplying a halogen-containing gas into a processing chamber in which the substrate is loaded; and removing a metal oxide from the bottom portion of the recess using the halogen-containing gas.

Abstract: A plasma processing method according to an embodiment is performed in a state in which a substrate is placed on a support stage in an internal space of a chamber body. In the plasma processing method, a plasma treatment is performed on the substrate. Subsequently, a phase of a voltage of a lower electrode is relatively adjusted with respect to a phase of a voltage of an upper electrode by a phase adjustment circuit, such that a thickness of a sheath between the support stage and plasma without extinguishing the plasma generated in order to perform the plasma treatment. Thereafter, in a state in which supply of a high-frequency power is stopped, gases and particles in the internal space of the chamber body are discharged using an exhaust device.

Abstract: The invention discloses a catalyst comprising a silica support, a modifier metal and a catalytic alkali metal. The silica support has a multimodal pore size distribution comprising a mesoporous pore size distribution having an average pore size in the range 2 to 50 nm and a pore volume of said mesopores of at least 0.1 cm3/g, and a macroporous pore size distribution having an average pore size of more than 50 nm and a pore volume of said macropores of at least 0.1 cm3/g. The level of catalytic alkali metal on the silica support is at least 2 mol %. The modifier metal is selected from Mg, B, Al, Ti, Zr and Hf. The invention also discloses a method of producing the catalyst, a method of producing an ethylenically unsaturated carboxylic acid or ester in the presence of the catalyst, and a process for preparing an ethylenically unsaturated acid or ester in the presence of the catalyst.

Abstract: There is provided a method of performing a surface processing on a substrate having a metal layer formed on a bottom portion of a recess formed in an insulating film, the method including: supplying a halogen-containing gas into a processing chamber in which the substrate is loaded; and removing a metal oxide from the bottom portion of the recess using the halogen-containing gas.

Abstract: The present invention is a catalyst comprising: (i) a compound comprising at least one first metal element selected from boron, magnesium, zirconium, and hafnium, and (ii) an alkali metal element, wherein the compound and the alkali metal element are supported on a carrier having silanol groups, an average particle size of the compound of the first metal element is 0.4 nm or more and 50 nm or less, the catalyst satisfies the following formula (1): 0.90×10?21 (g/number)?X/(Y×Z)<10.8×10?21 (g/number) ??formula (1), in which X is a molar ratio of the alkali metal element to the at least one first metal element in the catalyst, Y is a BET specific surface area of the catalyst (m2/g), and Z is a number of the silanol groups per unit area (number/nm2).

Abstract: A film forming apparatus 1 includes a plasma generating mechanism 47 commonly used for plasmarizing a processing gas and a cleaning gas supplied into a processing vessel 11 in which a vacuum atmosphere is formed; an exhaust device 17 configured to evacuate an exhaust line 61 connected to a processing gas discharge unit 43 while the plasmarization of the cleaning gas is being performed by the plasma generating mechanism 47; a tank 62 provided at the exhaust line 61; and a valve V2 which is provided at the exhaust line 61 between the tank 62 and the processing gas discharge unit 43. The valve V2 is configured to be closed to reduce an internal pressure of the tank 62 and opened to attract the plasmarized cleaning gas into the tank 62 from a processing space 40 through the processing gas discharge unit 43.

Abstract: A plasma processing method according to an embodiment is performed in a state in which a substrate is placed on a support stage in an internal space of a chamber body. In the plasma processing method, a plasma treatment is performed on the substrate. Subsequently, a phase of a voltage of a lower electrode is relatively adjusted with respect to a phase of a voltage of an upper electrode by a phase adjustment circuit, such that a thickness of a sheath between the support stage and plasma without extinguishing the plasma generated in order to perform the plasma treatment. Thereafter, in a state in which supply of a high-frequency power is stopped, gases and particles in the internal space of the chamber body are discharged using an exhaust device.