Abstract: Method for operating a processing system and refurbishing a ceramic substrate holder within a process chamber of the processing system are described. The method includes plasma processing one or more substrates on the ceramic substrate holder, where the processing causes erosion of a nitride material of the ceramic substrate holder. The method further includes refurbishing the ceramic substrate holder in-situ without a substrate residing on the ceramic substrate holder, where the refurbishing includes exposing the ceramic substrate holder to a plasma-excited nitrogen-containing gas in the process chamber to at least partially reverse the erosion of the nitride material.

Abstract: A film formation method includes a first stage including a period of heating a target substrate to a film formation temperature, and supplying a metal compound gas and a nitrogen-containing reducing gas onto the target substrate, thereby directly depositing a metal nitride film by CVD on a target substrate; and a second stage of supplying the metal compound gas and the nitrogen-containing reducing gas, thereby further depositing a metal nitride film by CVD on the metal nitride film initially deposited by the first stage, to obtain a predetermined film thickness. Each of the first stage and the second stage is arranged to repeat one or more times a cycle including a first step of supplying the metal compound gas and the nitrogen-containing reducing gas and a second step of stopping the metal compound gas and supplying the nitrogen-containing reducing gas.

Abstract: The precoat film forming method of a film forming device having a loading table for loading the object, includes a deposition step of feeding processing gas inside the film forming device and depositing a precoat TiN film on the surface of the loading table and a stabilization step of reducing and stabilizing the precoat film on the loading table, wherein the precoat film formed on the loading table at the deposition step has a film thickness within a range such that even if the film thickness of the precoat film changes, a radiation heat quantity from the loading table becomes generally constant. Therefore, as the thermal stability is maintained at the film forming process of semiconductor wafers, it is possible to improve the reproducibility in the film forming process.

Abstract: Embodiments of the invention describe TiN deposition methods suitable for high volume manufacturing of semiconductor devices on large patterned substrates (wafers). One embodiment describes a chemical vapor deposition (CVD) process using high gas flow rate of a tetrakis(ethylmethylamino) titanium (TEMAT) precursor vapor along with an inert carrier gas at a low process chamber pressure that provides high deposition rate of conformal TiN films with good step coverage in surface reaction limited regime. Other embodiments describe cyclical TiN deposition methods using TEMAT precursor vapor and a nitrogen precursor.

Abstract: Embodiments of the invention describe TiN deposition methods suitable for high volume manufacturing of semiconductor devices on large patterned substrates (wafers). One embodiment describes a chemical vapor deposition (CVD) process using high gas flow rate of a tetrakis(ethylmethylamino)titanium (TEMAT) precursor vapor along with an inert carrier gas at a low process chamber pressure that provides high deposition rate of conformal TiN films with good step coverage in surface reaction limited regime. Other embodiments describe cyclical TiN deposition methods using TEMAT precursor vapor and a nitrogen precursor.

Abstract: A TiN film is formed to have a predetermined thickness on a semiconductor wafer by heating the semiconductor wafer at a film formation temperature within a process container and performing a cycle including a first step and a second step at least once. The first step is arranged to supply a TiCl4 gas and a NH3 gas to form a film of TiN by CVD. The second step is arranged to stop the TiCl4 gas and supply the NH3 gas. In film formation, the semiconductor wafer is set at a temperature of less than 450° C. and the process container is set to have therein a total pressure of more than 100 Pa. The NH3 gas is set to have a partial pressure of 30 Pa or less within the process container in the first step.

Abstract: The precoat film forming method has the deposition step of feeding processing gas into the film forming device having the loading table structure 18 internally which has the loading table 16 for loading the article W to be processed and depositing the precoat film 22 composed of a TiN film on the surface of the loading table and the stabilization step of exposing and stabilizing the precoat film in NH3 (ammonia) containing gas by keeping the loading table at a temperature higher than the temperature at the deposition step. By doing this, the precoat film is stabilized, thereby even during a period of idling, there is no need to lower the temperature of the loading table and the throughput can be improved.

Abstract: A wavelength demultiplexer demultiplexes a wavelength multiplexed incident photon pulse string based on wavelengths of the photons in the photon pulse string. Each of a plurality of photon detectors detects a photon that is demultiplexed by the wavelength demultiplexer and outputs a signal based on detected photon, and a bias applying unit applies a gate pulse as a bias voltage to at least some of the photon detectors to match an incidence timing of an output light of the wavelength demultiplexer to the photon detectors. A data processor converts the signals from the photon detectors into time series signals.

Abstract: An objective, when extracting from data such as an image, an audio, and a moving picture, is to extract the information from raw data that has not been processed for extraction, extract many different items of information for different purposes from the same data, and increase the amount of information that can be extracted. In a mobile phone with camera 101, a photographing section 204 photographs an image. A data analyzing section 207 analyses the image based on analysis definition information, which is stored in a definition storing section 201, to define how much data in which part to be read in what order when extracting information from the image. A data converting section 208 extracts information from the image based on code definition information, which is stored in the definition storing section 201, to define a method of computing data taken out according to the analysis definition information.

Abstract: A folding apparatus of a rotary press which can select collect run or straight run comprises: a fixed pin cam 2 which performs operations of straight run and collect run; a correction pin cam 3 which stops in case of straight run, and protrudes/retracts a pin end portion with respect to an outer periphery of a folding cylinder once per two rotations of a folding cylinder 12 in case of collect run; a blade cam 4 which thrusts a blade of each blade device 16 into a jaw device 17 once per rotation of the folding cylinder in case of straight run, and thrusts the same into the jaw device 17 once per two rotations of the folding cylinder in case of collect run; switching means 62 for switching between a drive side connection and a stop side connection of the correction pin cam and the blade cam; and detecting means 61 for detecting a start-up timing of the switching means.

Abstract: Provided is a quantum cryptography communication apparatus capable of preventing a go photon pulse from being phase modulated and also capable of freely selecting any repetitive frequency of a light source.

Abstract: The present invention relates to a method of forming a metal-nitride film onto a surface of an object to be processed in a processing container in which a vacuum can be created. The method of the invention includes: a step of continuously supplying an inert gas into a processing container set at a high film-forming temperature; and a step of intermittently supplying a metal-source gas into the processing container, during the step of continuously supplying the inert gas. During the step of intermittently supplying the metal-source gas, a nitrogen-including reduction gas is supplied into the processing container at the same time that the metal-source gas is supplied, during a supply term of the metal-source gas. The nitrogen-including reduction gas is also supplied into the processing container for a term shorter than a non-supply term of the metal-source gas, during the non-supply term of the metal-source gas.

Abstract: An exhaust apparatus for a process apparatus which processes an object using a process gas includes an exhaust pipe to be connected to an exhaust port of the process apparatus, and a trap mechanism connected to the exhaust pipe, for removing an impurity gas contained in an exhaust gas from the process apparatus. A reaction-gas supply mechanism is provided in the exhaust pipe at an upstream of the trap mechanism, for feeding a reaction gas which is reacted with the impurity gas in to exhaust pipe to lower a vapor pressure of the impurity gas.

Abstract: The precoat film forming method of a film forming device having a loading table for loading the object, includes a deposition step of feeding processing gas inside the film forming device and depositing a precoat TiN film on the surface of the loading table and a stabilization step of reducing and stabilizing the precoat film on the loading table, wherein the precoat film formed on the loading table at the deposition step has a film thickness within a range such that even if the film thickness of the precoat film changes, a radiation heat quantity from the loading table becomes generally constant. Therefore, as the thermal stability is maintained at the film forming process of semiconductor wafers, it is possible to improve the reproducibility in the film forming process.

Abstract: A qubit generating unit 40 generates a qubit having a predetermined quantum state. A qubit encoding unit 70 performs quantum encoding of the generated qubit. A first pseudo-random number generating unit 60 generates a first pseudo-random number from secretly shared information 3 which has been secretly shared with the quantum receiving device 200 in advance. A quantum modulator 80 performs quantum modulation of the qubit on which quantum encoding has been performed based on the first pseudo-random number and sends the modulated qubit to the quantum receiving device 200. A second pseudo-random number generating unit 220 generates a second pseudo-random number from secretly shared information 21 which has been secretly shared with the above quantum sending device 100 in advance synchronously with generation of the above first pseudo-random number. A qubit demodulator 230 performs quantum demodulation of the qubit which has been received from the quantum demodulator 80 based on the second pseudo-random number.

Abstract: The precoat film forming method has the deposition step of feeding processing gas into the film forming device having the loading table structure 18 internally which has the loading table 16 for loading the article W to be processed and depositing the precoat film 22 composed of a TiN film on the surface of the loading table and the stabilization step of exposing and stabilizing the precoat film in NH3 (ammonia) containing gas by keeping the loading table at a temperature higher than the temperature at the deposition step. By doing this, the precoat film is stabilized, thereby even during a period of idling, there is no need to lower the temperature of the loading table and the throughput can be improved.

Abstract: The present invention relates to a method of forming a metal-nitride film onto a surface of an object to be processed in a processing container in which a vacuum can be created. The method of the invention includes: a step of continuously supplying an inert gas into a processing container set at a low film-forming temperature; and a step of intermittently supplying a metal-source gas into the processing container, during the step of continuously supplying the inert gas. During the step of intermittently supplying the metal-source gas, a nitrogen-including reduction gas is supplied into the processing container at the same time that the metal-source gas is supplied, during a supply term of the metal-source gas. The nitrogen-including reduction gas is also supplied into the processing container for a term shorter than a non-supply term of the metal-source gas, during the non-supply term of the metal-source gas.

Abstract: A folding apparatus of a rotary press which can select collect run or straight run comprises: a fixed pin cam 2 which performs operations of straight run and collect run; a correction pin cam 3 which stops in case of straight run, and protrudes/retracts a pin end portion with respect to an outer periphery of a folding cylinder once per two rotations of a folding cylinder 12 in case of collect run; a blade cam 4 which thrusts a blade of each blade device 16 into a jaw device 17 once per rotation of the folding cylinder in case of straight run, and thrusts the same into the jaw device 17 once per two rotations of the folding cylinder in case of collect run; switching means 62 for switching between a drive side connection and a stop side connection of the correction pin cam and the blade cam; and detecting means 61 for detecting a start-up timing of the switching means.

Abstract: In case of the high-speed operation, it is difficult to ignore the time required for the voltage to rise to the level of voltage to be applied and the time to fall to 0V when the voltage is applied to the phase modulator. The first phase modulator 71 and the second phase modulator 73 are connected in parallel, and the optical path is switched by the switching unit 55 of the control unit 51 between the first optical switch 33 and the second optical switch 35. The switching unit 55 of the control unit 51 supplies the phase modulation data 31 stored in the phase modulation data memory 53 to the first voltage generating unit 57 or the second voltage generating unit 59 to generate the voltage necessary for the phase modulation.

Abstract: In processes for coating objects, such as semiconductor wafers, with a film of metal, such as titanium metal, a metal-containing compound, such as TiCl4, is injected into a chamber containing the object and a portion of the metal-containing compound reacts to provide the film of metal on the object and a gas containing by-products, such as unreacted TiCl4 and TiClx (x<4), which is discharged out of the chamber and passed through a trap mechanism and an eliminator for the removal of the by-products out of the gas. The by-products have relatively high vapor pressures, making them difficult to trap. The Applicants have found that by adding a reagent, such as water, O2 or NH3, into the exhaust gas at a location upstream of the trap mechanism and eliminator, the reagent reacts with the by-product in the gas to produce a compound, such as TiCl4.2NH3, which has a significantly lower vapor pressure than the by-product and can be removed in the trap mechanism.