Abstract: A semiconductor device includes an optical semiconductor element, a package including a base made of a metal for mounting the optical semiconductor element, and a cap for encapsulating the optical semiconductor element and a gas by covering the package and the optical semiconductor element. The gas encapsulated with the package has an oxygen concentration not less than 15% and less than 30% and has a dew-point not less than ?15° C. and not more than ?5° C.

Abstract: A wiring board for manufacturing a resin-molding type semiconductor device includes a plurality of element regions each having a mount region on which a semiconductor element is mounted and an electrode wire, and a peripheral region surrounding the plurality of element regions and having resin-gripping means such as through holes engaged with a resin with which the plurality of element regions and the peripheral region are sealed.

Abstract: There is provided a connection structure between a Si electrode (Si member) and an Al wire (Al member). Between the Si electrode and the Al wire, a first part and second parts are present in interposed relation. Each of the first and second parts is in contact with the Si electrode and with the Al wire. In the first part, a Si oxide layer and an Al oxide layer are present. The Si oxide layer is in contact with the Si electrode. The Al oxide layer is interposed between the Si oxide layer and the Al wire. In some of the second parts, Al is present. In the others of the second parts, a Si portion and an Al portion are present.

Abstract: There are provided a lead frame including a plurality of first external terminal portions 5 provided on a plane, inner lead portions 6 formed of back surfaces of the respective first external terminal portions and arranged so as to surround a region inside the inner lead portions, and second external terminal portions 7 formed of uppermost surfaces of convex portions positioned outside the respective inner lead portions; a semiconductor element 2 flip-chip bonded to the inner lead portions via bumps 3; and an encapsulating resin 4 encapsulating surroundings of the semiconductor element and the inner lead portions. The first external terminal portions are arranged in a lower surface region of the encapsulating resin along a periphery of the region, and the second external terminal portions are exposed on an upper surface of the encapsulating resin.

Abstract: The electronic component includes: a fixed film; a vibration film facing the fixed film; a first electrode formed on the fixed film and having at least one first through hole in the center portion; and a second electrode formed on a portion of the vibration film corresponding to the first electrode and having at least one second through hole in the peripheral portion. An air gap communicating with the first and second through holes is formed between the fixed film and the vibration film and surrounded with a rib. At least one side hole is provided to extend in the rib surrounding the air gap from the air gap toward outside.

Abstract: A production equipment includes a substrate 2 placed inside and having a plurality of semiconductor elements 3 mounted thereon, and a resin molding mold 20 having a cavity 21. The mold 20 has resin injection ports 29a and air release ports 30a. Each of the resin injection ports 29a is formed in a top surface portion of the cavity in the mold in association with the corresponding semiconductor element 3. Each of the air release ports 30a is formed around each of the resin injection ports 29a.

Abstract: A resin-sealed semiconductor device with built-in heat sink prevents internal bulging and cracking caused by exfoliation of a semiconductor element from the heat sink when the vapor pressure of moisture absorbed into a gap between the semiconductor element and the heat sink rises during mounting of the semiconductor device to a printed circuit board using lead-free solder. By providing a plurality of separated die pads (502) in a mounting area for a semiconductor element (301) and adhering the semiconductor element (301) to the heat sink (105) via the die pads (502), space is opened up between the semiconductor element (301) and the heat sink (105) for sealing resin (304) to run into.

Abstract: An optical device includes a base, an optical element chip attached to the base, an integrated circuit chip attached onto the back surface of the optical element chip, and a translucent member (window member). A wire is buried within the base, and the wire has an internal terminal portion, an external terminal portion, and a midpoint terminal portion. A pad electrode of the optical element chip is connected to the internal terminal portion through a bump, and a pad electrode of the integrated circuit chip is connected to the midpoint terminal portion through a fine metal wire.

Abstract: An optical device includes a light receiving element chip having: an active region formed on a principal plane of a substrate and made by arranging a plurality of light receiving pixels; a circuit region disposed around an outer circumference of the active region; a penetrating conductor provided to penetrate the substrate in the thickness direction of the substrate; and an external connection terminal provided on a back surface of the substrate facing the principal plane thereof and connected to the penetrating conductor. The optical device further includes a microlens, a planarization film, and a transparent protective film formed on the planarization film.

Abstract: An imaging module is formed by stacking: a first resin board; a second resin board having a first opening; a first electrically-conductive member electrically connecting the first resin board and the second resin board to each other; a printed circuit board having a second opening; a second electrically-conductive member electrically connecting the second resin board and the printed circuit board to each other; an imaging semiconductor chip mounted on the lower surface of the second resin board to cover the first opening and provided with an imaging sensor, an optical member placed on the upper surface of the second resin board to cover the first opening; a first semiconductor control chip provided with a control device for controlling operation of the imaging sensor and mounted on the lower surface of the first resin board.

Abstract: A semiconductor device includes: a semiconductor element; a die pad with the semiconductor element mounted thereon; a plurality of electrode terminals each having a connecting portion electrically connected with the semiconductor element; and a sealing resin for sealing the semiconductor element, the die pad and the electrode terminals so that a surface of each electrode terminal on an opposite side from a surface having the connecting portion is exposed as an external terminal surface. A recess having a planar shape of a circle is formed on the surface of each electrode terminal with the connecting portion, and the recess is arranged between an end portion of the electrode terminal exposed from an outer edge side face of the sealing resin and the connecting portion. While a function of the configuration for suppressing the peeling between the electrode terminal and the sealing resin can be maintained by mitigating an external force applied to the electrode terminal, the semiconductor device can be downsized.

Abstract: An optical device includes a base, an optical element chip attached to the base, an integrated circuit chip attached onto the back surface of the optical element chip, and a translucent member (window member). A wire is buried within the base, and the wire has an internal terminal portion, an external terminal portion, and a midpoint terminal portion. A pad electrode of the optical element chip is connected to the internal terminal portion through a bump, and a pad electrode of the integrated circuit chip is connected to the midpoint terminal portion through a fine metal wire.

Abstract: An optical device is equipped with a light receiving region 16a and a peripheral circuit region 22 located around the light receiving region 16a on a major surface of an light receiving element 11a; electrodes for external connection 15 electrically connected to the peripheral circuit region 22 formed on a back surface opposite to the major surface of the light receiving element 11a; a transparent member 12 covering the light receiving region 16a adhered on the major surface of the light receiving element 11a with a light-transmitting adhesive 13; and a molding resin 14 for coating side surfaces of the transparent member 12 and the major surface of the light receiving element 11a excluding the region covered with the transparent member 12.

Abstract: A resin-encapsulated semiconductor device includes a semiconductor chip, a plurality of inner leads that are connected to a group of electrodes of the semiconductor chip, respectively, and an encapsulating resin that encapsulates a connection part located between the semiconductor chip and the inner leads. Each of the inner leads includes a protruded portion provided on a surface thereof on an outer side relative to the periphery of the semiconductor chip. The protruded portion protrudes in a thickness direction and is provided with a step portion formed in its side portion. The group of electrodes of the semiconductor chip is connected to surfaces of inner portions of the inner leads located on an inner side relative to their protruded portions, through electroconductive bumps, respectively. The encapsulating resin encapsulates the semiconductor chip and the electroconductive bumps and is formed to expose surfaces of the protruded portions.

Abstract: A semiconductor device includes: a semiconductor element; a die pad with the semiconductor element mounted thereon; a plurality of electrode terminals each having a connecting portion electrically connected with the semiconductor element; and a sealing resin for sealing the semiconductor element, the die pad and the electrode terminals so that a surface of each electrode terminal on an opposite side from a surface having the connecting portion is exposed as an external terminal surface. A recess having a planar shape of a circle is formed on the surface of each electrode terminal with the connecting portion, and the recess is arranged between an end portion of the electrode terminal exposed from an outer edge side face of the sealing resin and the connecting portion. While a function of the configuration for suppressing the peeling between the electrode terminal and the sealing resin can be maintained by mitigating an external force applied to the electrode terminal, the semiconductor device can be downsized.

Abstract: A solid-state image sensor includes a first image sensing device, a first flexible substrate connected to the first image sensing device, a second solid-state image sensing device, and a second flexible substrate connected to the second solid-state image sensing device. The solid-state image sensing devices are disposed adjacently to each other such that light receiving surfaces are perpendicular to each other. The second solid-state image sensing device directly receives incident light. However, the first solid-state image sensing device receives the incident light reflected by a mirror. Electronic components are mounted on the two flexible substrates. The first flexible substrate is bent at two bending positions to face the second flexible substrate and electrically connected thereto.

Abstract: One end of a flexible substrate is connected to a solid-state image sensing device and the other end constitutes an external connection part in which external lead-out electrodes are provided. A plurality of electronic components are mounted on a mounting part of the flexible substrate. The flexible substrate is bent at a first bent part thereof to make an acute angle with the solid-state image sensing device and also bent at a second bent part thereof to make an acute angle with the external connection part. The two acute angles are alternate angles and the solid-state image sensing device has a cross section of the letter Z.

Abstract: A semiconductor module is formed by alternately stacking resin boards 3 on which semiconductor chips 2 are mounted and sheet members having openings larger than the semiconductor chips 2 and bonded to the resin boards 3. The resin board 4 located at the bottom out of the resin boards 3 is thicker than the other resin boards 3.

Abstract: A semiconductor device in accordance with the present invention includes IC chips (semiconductor elements) (2, 3, 4) having solder bumps (24) (projecting electrodes) formed on electrode pads, and a first wiring board (1) having connection terminals (7) to which the respective solder bumps (24) of the IC chips (2, 3, 4) are connected, external connection terminals (8) for connection to an external apparatus, and conductor wires (9) provided in respective groove portions formed in a board surface and connected to the respective connection terminals (7). In spite of the reduced pitch of the conductor wires (9), the presence of the groove portions enables an increase in cross section, allowing a reduction in wiring resistance.

Abstract: An optical semiconductor device includes a semiconductor laser chip, a base for mounting the semiconductor laser chip and a solder layer sandwiched between the top surface of the base and the bottom surface of the semiconductor laser chip. The semiconductor laser chip is warped in upward convex shape.