Abstract: A method for manufacturing a semiconductor device includes forming one or more fins extending in a first direction over a substrate. The one or more fins include a first region along the first direction and second regions on both sides of the first region along the first direction. A dopant is implanted in the first region of the fins but not in the second regions. A gate structure overlies the first region of the fins and source/drains are formed on the second regions of the fins.

Abstract: An integrated circuit includes an inductor that includes a first set of conductive lines in a first metal layer, and is over a substrate, and a guard ring. The guard ring includes a first conductive line in a second metal layer, and extending in a first direction, a second conductive line extending in a second direction, and a first staggered line coupled between the first conductive line and the second conductive line. The first staggered line includes a second set of conductive lines in the second metal layer, and extends in the first direction, a third set of conductive lines in a third metal layer, and extends in the second direction, and a first set of vias coupling the second and third set of conductive lines together. All metal lines in the third metal layer that are part of the guard ring extend in the second direction.

Abstract: A method of making a semiconductor device includes depositing an isolation region between adjacent fins of a plurality of fins over a substrate, wherein a top-most surface of the isolation region is a first distance from a bottom of the substrate. The method further includes doping each of the plurality of fins with a first dopant having a first dopant type to define a first doped region in each of the plurality of fins, wherein a bottom-most surface of the first doped region is a second distance from the bottom of the substrate, and the second distance is greater than the first distance. The method further includes doping each of the plurality of fins with a second dopant having a second dopant type to define a second doped region in each of the plurality of fins, wherein the second doped region contacts the isolation region.

Abstract: A method for manufacturing a semiconductor device including an upper-channel implant transistor is provided. The method includes forming one or more fins extending in a first direction over a substrate. The one or more fins include a first region along the first direction and second regions on both sides of the first region along the first direction. A dopant is shallowly implanted in an upper portion of the first region of the fins but not in the second regions and not in a lower portion of the first region of the fins. A gate structure extending in a second direction perpendicular to the first direction is formed overlying the first region of the fins, and source/drains are formed overlying the second regions of the fins, thereby forming an upper-channel implant transistor.

Abstract: A test circuit includes an oscillator configured to generate an oscillation signal, a device-under-test (DUT) configured to output an AC signal based on the oscillation signal, a first detection circuit configured to generate a first DC voltage having a first value based on the oscillation signal, and a second detection circuit configured to generate a second DC voltage having a second value based on the AC signal.

Abstract: A method for manufacturing a semiconductor device includes forming one or more fins extending in a first direction over a substrate. The one or more fins include a first region along the first direction and second regions on both sides of the first region along the first direction. A dopant is implanted in the first region of the fins but not in the second regions. A gate structure overlies the first region of the fins and source/drains are formed on the second regions of the fins.

Abstract: A test circuit includes an amplifier configured to receive an AC signal, and output an amplified AC signal based on the AC signal, a first detection circuit configured to generate a first DC voltage having a first value based on an amplitude of the AC signal, and a second detection circuit configured to generate a second DC voltage having a second value based on an amplitude of the amplified AC signal.

Abstract: An integrated circuit includes an inductor over a substrate and a guard ring surrounding the inductor. The guard ring includes a first staggered line, a first metal line extending in a first direction and a second metal line extending in a second direction different from the first direction. The first staggered line has a first end coupled to the first metal line, and a second end coupled to the second metal line. The first staggered line includes a first set of vias, a first set of metal lines in a first metal layer and a second set of metal lines in a second metal layer different from the first metal layer. The first set of vias coupling the first set of metal lines with the second of second metal lines.

Abstract: In some embodiments, a differential oscillator includes a differential circuit coupled between a first output node and a second output node and a transformer-coupled band-pass filter (BPF). The transformer-coupled BPF is coupled between the first output node and the second output node and includes a coupling device and a transformer. The coupling device is coupled between the first output node and the second output node. The transformer includes a first winding coupled between the first output node and a voltage node and a second winding coupled between the second output node and the voltage node.

Abstract: A method for manufacturing a semiconductor device including an upper-channel implant transistor is provided. The method includes forming one or more fins extending in a first direction over a substrate. The one or more fins include a first region along the first direction and second regions on both sides of the first region along the first direction. A dopant is shallowly implanted in an upper portion of the first region of the fins but not in the second regions and not in a lower portion of the first region of the fins. A gate structure extending in a second direction perpendicular to the first direction is formed overlying the first region of the fins, and source/drains are formed overlying the second regions of the fins, thereby forming an upper-channel implant transistor.

Abstract: Semiconductor structures and methods for forming a semiconductor structure are provided. An active semiconductor region is disposed in a substrate. A gate is formed over the substrate. Source and drain regions of a transistor are formed in the active semiconductor region on opposite sides of the gate. The drain region has a first width, and the source region has a second width that is not equal to the first width.

Abstract: A test circuit includes an amplifier configured to receive an AC signal, and output an amplified AC signal based on the AC signal, a first detection circuit configured to generate a first DC voltage having a first value based on an amplitude of the AC signal, and a second detection circuit configured to generate a second DC voltage having a second value based on an amplitude of the amplified AC signal.

Abstract: A band-pass filter (BPF) includes a pair of coupled transformers including first through fourth conductive structures. The first conductive structure includes a first terminal and two first extending portions extending from the first terminal and configured as primary windings. The second conductive structure includes a second terminal and two second extending portions extending from the second terminal. A first via connects the third conductive structure to a first one of the two second extending portions, the third conductive structure and the first one of the two second extending portions thereby being configured as a first secondary winding. A second via connects the fourth conductive structure to a second one of the two second extending portions, the fourth conductive structure and the second one of the two second extending portions thereby being configured as a second secondary winding.

Abstract: A testing system includes: a signal generator arranged to generate a testing signal; a dividing circuit coupled to the signal generator for providing a plurality of input signals according to the testing signal; and a plurality of power-amplifier chips coupled to the dividing circuit for being tested by generating a plurality of output signals for a predetermined testing time according to the plurality of input signals respectively.

Abstract: A wireless transmitter includes a an amplifier; and a switchable transformer, coupled to the amplifier, wherein the amplifier is configured to be coupled to the switchable transformer in first and second configurations, wherein the first configuration causes the amplifier to provide a first output impedance to the switchable transformer, and wherein the second configuration causes the amplifier to provide a second output impedance to the switchable transformer, the first and second output impedances being different from each other.

Abstract: Semiconductor structures and methods for forming a semiconductor structure are provided. An active semiconductor region is disposed in a substrate. A gate is formed over the substrate. Source and drain regions of a transistor are formed in the active semiconductor region on opposite sides of the gate. The drain region has a first width, and the source region has a second width that is not equal to the first width.

Abstract: A voltage-controlled oscillator (VCO) includes a power supply node configured to have a power supply voltage. A reference node is configured to have a reference voltage. A transformer-coupled band-pass filter (BPF) is coupled to a pair of transistors. The pair of transistors and the transformer-coupled band-pass filter are positioned between the power supply node and the reference node.

Abstract: A low noise amplifier (LNA) includes a pair of n-type transistors, each configured to provide a first transconductance; a pair of p-type transistors, each configured to provide a second transconductance; a first pair of coupling capacitors, cross-coupled between the pair of n-type transistors, and configured to provide a first boosting coefficient to the first transconductance; and a second pair of coupling capacitors, cross-coupled between the pair of p-type transistors, and configured to provide a second boosting coefficient to the second transconductance, wherein the LNA is configured to use a boosted effective transconductance based on the first and second boosting coefficients, and the first and second transconductances to amplify an input signal.

Abstract: A semiconductor device is disclosed. The semiconductor device includes a substrate, a metal-oxide-semiconductor device, and a feature. The metal-oxide-semiconductor device is disposed in the substrate. The feature is disposed adjacent to the metal-oxide-semiconductor device. The feature extends into the substrate with a first depth and the metal-oxide-semiconductor device extends into the substrate with a second depth smaller than the first depth.

Abstract: A method of detecting a power level of an RF signal includes driving an internal node of a power detection circuit to a DC node voltage level, generating, based on the DC node voltage level, a first component of an output voltage on an output node of the power detection circuit, receiving the RF signal on an input node of the power detection circuit, dividing the RF signal to generate a modulation signal on the internal node, and generating, by at least partially rectifying the modulation signal, a second component of the output voltage on the power detection circuit output node.