Abstract: Integrated circuit devices which include a thermoelectric generator which recycles heat generated by operation of an integrated circuit, into electrical energy that is then used to help support the power requirements of that integrated circuit. Roughly described, the device includes an integrated circuit die having an integrated circuit thereon, the integrated circuit having power supply terminals for connection to a primary power source, and a thermoelectric generator structure disposed in sufficient thermal communication with the integrated circuit die so as to derive, from heat generated by the die, a voltage difference across first and second terminals of the thermoelectric generator structure. A powering structure is arranged to help power the integrated circuit, from the voltage difference across the first and second terminals of the thermoelectric generator. The thermoelectric generator can include IC packaging material that is made from thermoelectric semiconductor materials.

Abstract: A method of forming an electrical connection between a buried power rail (BPR) of an unfinished complementary field effect transistor (CFET) and a source or drain epitaxial growth of a lower level of the CFET is provided. The method includes performing silicon epitaxial growth in a lower level of the CFET, adding a contact material to a portion of an exposed portion of the silicon epitaxial growth in the lower level, the exposed portion of the silicon epitaxial growth being located in a vertical slot of the unfinished CFET structure, adding a conductive material within a vertical channel, the conductive material being in contact with the added contact material and the BPR to form an electrical connection between the portion of the exposed portion of the silicon epitaxial growth and the BPR and etching back a portion of the added conductive material within the vertical channel.

Abstract: A memory cell comprises a pair of cross-coupled inverters as a storage element, a first inverter in the pair of cross-coupled inverters having a first output at a first node, a second inverter in the pair of cross-coupled inverters having a second output at a second node. A first complementary transmission gate includes a first nMOS pass gate and a first pMOS pass gate, connected between the first node and a first bit line. A second complementary transmission gate includes a second nMOS pass gate and a second pMOS pass gate, connected between the second node and a second bit line. A first word line is connected to gate conductors of the first and second nMOS pass gates in the first and second complementary transmission gates. A second word line is connected to gate conductors of the first and second pMOS pass gates in the first and second transmission gates.

Abstract: The independent claims of the present disclosure signify a concise description of embodiments. An electronic structure based on complementary-field effect transistor (CFET) architecture is disclosed. The electronic structure comprises an n-channel metal-oxide-semiconductior (NMOS) gate-all-around (GAA) channel in a first layer, and p-channel metal-oxide-semiconductor (PMOS) GAA channel in a second layer. The PMOS GAA channel is wider compared to the NMOS GAA channel. The first layer is above the second layer and separated by a dielectric layer.

Abstract: At least one fin structure may be created on a silicon substrate. Next, a width of the at least one fin structure may be decreased by applying one or more iterations of a self-limiting fin etch process.

Abstract: A method of performing epitaxial growth of a source and drain on levels of a complementary field effect transistor (CFET) is provided. The method includes depositing a first blocking material in a vertical channel of an unfinished CFET structure, oxidizing silicon at a surface of an upper level of the CFET to provide one or more SiO2 protective layers, etching away a portion of silicon from a lower level of the CFET to form a lateral recess that is exposed to the vertical channel, and performing silicon epitaxial growth in the lower level of the unfinished CFET structure. Further, after the silicon epitaxial growth on the lower level, the method includes depositing a second blocking material in the vertical channel to cover at least a portion of the silicon epitaxial growth in the lower level, removing the SiO2 protective layer, and performing epitaxial growth on the upper level.

Abstract: A method for forming ultra-high density integrated circuitry, such as for a 6T SRAM, for example, is provided. The method involves applying double patterning litho-etch litho-etch (LELE) and using a spacer process to shrink the critical dimension of features. To improve process margins, the method implements a double-patterning technique by modifying the layout and splitting cross-coupling straps into two colors (e.g., each color corresponds to a mask-etch process). In addition, a spacer process is implemented to shrink feature size and increase the metal-to-metal spacing between the two cross-coupling straps, in order to improve process margin and electrical performance. This is achieved by depositing a spacer layer over an opening in a hardmask, followed by spacer etch back. The opening is thus shrunk by the amount of spacer thickness. The strap-to-strap spacing may then be increased by twice the amount of spacer thickness.

Abstract: A method for forming ultra-high density integrated circuitry, such as for a 6T SRAM, for example, is provided. The method involves applying double patterning litho-etch litho-etch (LELE) and using a spacer process to shrink the critical dimension of features. To improve process margins, the method implements a double-patterning technique by modifying the layout and splitting cross-coupling straps into two colors (e.g., each color corresponds to a mask-etch process). In addition, a spacer process is implemented to shrink feature size and increase the metal-to-metal spacing between the two cross-coupling straps, in order to improve process margin and electrical performance. This is achieved by depositing a spacer layer over an opening in a hardmask, followed by spacer etch back. The opening is thus shrunk by the amount of spacer thickness. The strap-to-strap spacing may then be increased by twice the amount of spacer thickness.

Abstract: Embodiments relate to an electronic circuit implemented using a first integrated circuit die, a second integrated circuit die, and an interposer connecting the first integrated circuit die to the second integrated circuit die. The first integrated circuit die implements a first electronic circuit. The first integrated circuit die includes a first set of contacts on a bottom surface, a buried power rail (BPR), and a plurality of through-silicon vias (TSV) for connecting the BPR to the first set of contacts. The interposer includes a second set of contacts and a power delivery network (PDN). Each contact of the second set of contact corresponds to a contact of the first set of contacts of the first integrated circuit die. The PDN is configured to route a power supply voltage to the second set of contacts.

Abstract: An integrated circuit (IC) chip may include a first gate-all-around (GAA) device and a second GAA device. The first GAA device may include a first set of silicon dioxide structures around a first set of silicon channels, a first set of hafnium dioxide structures around the first set of silicon dioxide structures, and a first metal structure around the first set of hafnium dioxide structures. The second GAA device may include a second set of silicon dioxide structures around a second set of silicon channels, and a second metal structure around the second set of silicon dioxide structures. Each silicon dioxide structure in the first set of silicon dioxide structures may have a first thickness. Each silicon dioxide structure in the second set of silicon dioxide structures may have a second thickness, which is greater than the first thickness.

Abstract: A method of forming a multitude of vertical NAND memory cells, includes, in part, forming a multitude of insulating materials on a silicon substrate, forming a trench in the insulating materials to expose a surface of the silicon substrate, depositing a layer of polysilicon along the sidewalls of the trench, filling the trench with oxide, forming a metal layer above the trench, and forming a mono-crystalline channel for the NAND memory cells by applying a voltage between the silicon substrate and the metal layer to cause the polysilicon sidewalls to melt. The melted polysilicon sidewalls is enable to recrystallize into the mono-crystalline channel.

Abstract: Josephson junction (JJ) structures are disclosed. In some embodiments, a JJ structure may include a first superconducting structure and a second superconducting structure disposed on a plane parallel to a silicon wafer surface. A non-superconducting structure may be disposed between the first superconducting structure and the second superconducting structure. A direction of current flow through the non-superconducting structure may be parallel to the silicon wafer surface.

Abstract: A configuration to isolate ion implantation of silicon channels for placement of integrated circuit devices within an integrated circuit layout. The configuration layers a photolithographic mask having one or more openings on a silicon substrate. The configuration directs a focused ion beam towards the silicon substrate to implant ions in the silicon substrate at the one or more openings in the photolithographic mask. The configuration anneals the silicon substrate with the layered photolithographic mask to activate a reaction between silicon of the silicon substrate and the implanted ion to achieve an ionized formation in the silicon substrate.

Abstract: A method includes instantiating a first plurality of rows in a first region of a fabric. The first region has a height corresponding to a sum of heights of the first plurality of rows. The method also includes instantiating a second plurality of rows in a second region of the fabric. The second region is horizontally adjacent to the first region in the fabric. The second region has a height corresponding to a sum of heights of the second plurality of rows. The method further includes determining whether a row of the first plurality of rows is misaligned with a row of the second plurality of rows and adding a transition region between the row of the first plurality of rows and the row of the second plurality of rows in response.

Abstract: At least one fin structure may be created on a silicon substrate. Next, a width of the at least one fin structure may be decreased by applying one or more iterations of a self-limiting fin etch process.

Abstract: Josephson junction (JJ) structures are disclosed. In some embodiments, a JJ structure may include a non-superconducting structure having a hollow region. A first superconducting structure may be disposed inside the hollow region of the non-superconducting structure, and a second superconducting structure may be disposed around the non-superconducting structure outside the hollow region.

Abstract: Embodiments relate to designing an integrated circuit using a cell that includes a mixed diffusion break. The cell has first and second edges, where the second edge is opposite from the first edge. The cell has a first dummy transistor spanning between the first edge of the cell and an edge of a first diffusion break. The first diffusion break may be centered under the first dummy transistor. The first dummy transistor and the first diffusion break may form a single diffusion break. Additionally, the cell has a second dummy transistor spanning between the second edge of the cell and an edge of a second diffusion break. The second dummy transistor may span a distance of half of a gate pitch into the cell and be centered over the second edge. The second dummy transistor and the second diffusion break may form a double diffusion break.

Abstract: Integrated circuit devices which include a thermoelectric generator which recycles heat generated by operation of an integrated circuit, into electrical energy that is then used to help support the power requirements of that integrated circuit. Roughly described, the device includes an integrated circuit die having an integrated circuit thereon, the integrated circuit having power supply terminals for connection to a primary power source, and a thermoelectric generator structure disposed in sufficient thermal communication with the integrated circuit die so as to derive, from heat generated by the die, a voltage difference across first and second terminals of the thermoelectric generator structure. A powering structure is arranged to help power the integrated circuit, from the voltage difference across the first and second terminals of the thermoelectric generator. The thermoelectric generator can include IC packaging material that is made from thermoelectric semiconductor materials.

Abstract: The independent claims of this patent signify a concise description of embodiments. Disclosed is technology, roughly described, in which a semiconductor structure includes a substrate supporting a column of at least one (and preferably more than one) horizontally-oriented nanosheet transistor, each having a respective channel segment of semiconductor crystalline nanosheet material (preferably silicon or a silicon alloy) sheathed by gate stack material, wherein the channel segments have a diamond cubic crystal structure and are oriented such that the {111} planes are horizontal. Also disclosed is a method for fabricating such a structure, and a corrugated substrate that may be formed as an intermediate product. This Abstract is not intended to limit the scope of the claims.

Abstract: Roughly described, a task control system for managing multi-scale simulations receives a case/task list which identifies cases to be evaluated, at least one task for each of the cases, and dependencies among the tasks. A module allocates available processor cores to at least some of the tasks, constrained by the dependencies, and initiates execution of the tasks on allocated cores. A module, in response to completion of a particular one of the tasks, determines whether or not the result of the task warrants stopping or pruning tasks, and if so, then terminates or prunes one or more of the uncompleted tasks in the case/task list. A module also re-allocates available processor cores to pending not-yet-executing tasks in accordance with time required to complete the tasks and constrained by the dependencies, and initiates execution of the tasks on allocated cores.