Abstract: An integrated circuit design tool for modeling resistance of an interconnect specifies a structure of the interconnect in a data structure in memory in or accessible by the computer system using 3D coordinate system. For each of a plurality of volume elements in the specified structure, the tool specifies a location and one of first and second materials of the interconnect having specified resistivities, and for each volume element generates a model resistivity for the volume element as a function of resistivity of volume elements within a neighborhood of the volume element and a specified transition region length ?.

Abstract: Electronic design automation modules for simulate the behavior of structures and materials at multiple simulation scales with different simulation modules.

Abstract: A circuit including an SRAM cell with a set of vertical nanowire transistor columns is provided. Each member of the set includes a vertical nanowire transistor and at least one member of the set is a vertical nanowire transistor column including two vertical nanowire transistors in series. The set can consist of four vertical nanowire transistor columns, a first column including two n-type vertical nanowire transistors, a second column including two n-type vertical nanowire transistors, a third column including one p-type vertical nanowire transistor and a fourth column including one p-type vertical nanowire transistor. EDA tools for such circuits are also provided.

Abstract: Roughly described, a system for simulating a temporal process in a body includes a meshing module to impose a grid of nodes on the body, the grid having a uniform node spacing which is less than the quantum separation distance in silicon. A system of node equations is provided, including at least one node equation for each of a plurality of nodes of the grid. The node equations describe behavior of at least one physical quantity at that node through each time step of the process. An iterating module iterates through the time steps to determine values for physical quantities of the body at the end of the simulation period. Preferably one particle of the body is assigned to each node of the grid. For moving boundary processes, boundary movement can be represented simply by changing the particle type assigned to various nodes of the grid as the boundary advances.

Abstract: Embodiments relate to an anti-fuse device with a transistor. The transistor may be a FinFET. The anti-fuse device includes a first electrode, an insulating layer, and a second electrode. The gate of the transistor may be formed in a same layer as the first electrode. The gate insulating layer on the gate of the transistor may be formed in a same layer as the insulating layer. The second electrode may be formed in a same layer as a local interconnect or a via and overlap the first electrode vertically over the insulating layer.

Abstract: Methods and apparatuses relate to implanting a surface of a semiconductor substrate with dopants, making undoped semiconductor material directly on the surface implanted with the dopants, and making a transistor with a transistor channel in the undoped semiconductor material, such that the transistor channel of the transistor remains undoped throughout manufacture of the integrated circuit.

Abstract: Electronic design automation modules for simulate the behavior of structures and materials at multiple simulation scales with different simulation modules.

Abstract: A method for improving an integrated circuit design which has transistors with nanowire channels comprises identifying a particular device having a particular transistor with a nanowire channel; and adding to the integrated circuit design circuitry which, when activated, repairs the particular transistor by self-heating. The method can comprise determining a memory cell that has a read current below a passing criteria, the memory cell having a transistor with a nanowire channel on a current path through which the read current flows; and applying a stress on the memory cell to repair the nanowire channel of the transistor in the memory cell on the current path. The determining step can include sensing read currents of memory cells in an array of memory cells; and determining one or more memory cells in the array of memory cells having read currents below the passing criteria, using the read currents sensed.

Abstract: A method for improving an integrated circuit design having transistors with nanowire channels comprises identifying a particular device having a particular transistor with a nanowire channel; and adding to the integrated circuit design a controller which, when activated, repairs the particular transistor by self-heating. A critical path in logic circuitry in the design can be determined including a particular device having a transistor with a nanowire channel. A repair circuit can be added to the design connected to the particular device, the repair circuit when activated applying a self-heating stress to the particular device. The repair circuit can include a selection block selecting among a plurality of signals as an input signal to the particular device. The plurality of signals include a repair signal and an operational logic signal, the repair signal being such as to apply the self-heating stress to the nanowire channel of the particular device when activated.

Abstract: Devices and methods are described relating to capacitor energy storage devices that are small in size and have a high energy stored to volume ratio. The capacitor devices include 2D material electrodes. The capacitor devices offer very fine granularity with high stacking possibilities which may be used in super capacitors and capacitor arrays. The devices include interleaved laminations 2D material electrode layers, for example graphene, and dielectric layers, for example Hafnium Oxide. In an embodiment a capacitor device includes 10,000 layers of interleaved graphene separated by 9,999 layers of HfO. Odd layers of the graphene are electrically connected to a first terminal and even layers of graphene are electrically connected to a second terminal of the capacitor device.

Abstract: A structure such as an integrated circuit device is described having a line of material with critical dimensions which vary within a distribution substantially less than that of a mask element, such as a patterned resist element, used in manufacturing the line of material.

Abstract: Roughly described, a system for simulating a temporal process in a body includes a meshing module to impose a grid of nodes on the body, the grid having a uniform node spacing which is less than the quantum separation distance in silicon. A system of node equations is provided, including at least one node equation for each of a plurality of nodes of the grid. The node equations describe behavior of at least one physical quantity at that node through each time step of the process. An iterating module iterates through the time steps to determine values for physical quantities of the body at the end of the simulation period. Preferably one particle of the body is assigned to each node of the grid. For moving boundary processes, boundary movement can be represented simply by changing the particle type assigned to various nodes of the grid as the boundary advances.

Abstract: Electronic design automation modules for simulate the behavior of structures and materials at multiple simulation scales with different simulation modules.

Abstract: Electronic design automation to simulate the behavior of structures and materials at multiple simulation scales with different simulators.

Abstract: In one well bias arrangement, no well bias voltage is applied to the n-well, and no well bias voltage is applied to the p-well. Because no external well bias voltage is applied, the n-well and the p-well are floating, even during operation of the devices in the n-well and the p-well. In another well bias arrangement, the lowest available voltage is not applied to the p-well, such as a ground voltage, or the voltage applied to the n+-doped source region of the n-type transistor in the p-well. This occurs even during operation of the n-type transistor in the p-well. In yet another well bias arrangement, the highest available voltage is not applied to the n-well, such as a supply voltage, or the voltage applied to the p+-doped source region of the p-type transistor in the n-well. This occurs even during operation of the p-type transistor in the n-well.

Abstract: Roughly described, an integrated circuit device has a conductor extending entirely through the substrate, connected on one end to the substrate topside surface and on the other end to the substrate backside surface. In various embodiments the conductor is insulated from all RDL conductors on the backside of the substrate, and/or is insulated from all conductors and device features on any below-adjacent chip in a 3D integrated circuit structure. Methods of fabrication are also described.

Abstract: A structure such as an integrated circuit device is described having a line of material with critical dimensions which vary within a distribution substantially less than that of a mask element, such as a patterned resist element, used in manufacturing the line of material.

Abstract: Integrated circuit devices which include a thermoelectric generator which recycles heat generated by operation of an integrated circuit, into electrical energy that is then used to help support the power requirements of that integrated circuit. Roughly described, the device includes an integrated circuit die having an integrated circuit thereon, the integrated circuit having power supply terminals for connection to a primary power source, and a thermoelectric generator structure disposed in sufficient thermal communication with the integrated circuit die so as to derive, from heat generated by the die, a voltage difference across first and second terminals of the thermoelectric generator structure. A powering structure is arranged to help power the integrated circuit, from the voltage difference across the first and second terminals of the thermoelectric generator. The thermoelectric generator can include IC packaging material that is made from thermoelectric semiconductor materials.

Abstract: Devices and methods are described relating to capacitor energy storage devices that are small in size and have a high energy stored to volume ratio. The capacitor devices include 2D material electrodes. The capacitor devices offer very fine granularity with high stacking possibilities which may be used in super capacitors and capacitor arrays. The devices include interleaved laminations 2D material electrode layers, for example graphene, and dielectric layers, for example Hafnium Oxide. In an embodiment a capacitor device includes 10,000 layers of interleaved graphene separated by 9,999 layers of HfO. Odd layers of the graphene are electrically connected to a first terminal and even layers of graphene are electrically connected to a second terminal of the capacitor device.

Abstract: Electronic design automation to simulate the behavior of structures and materials at multiple simulation scales with different simulators.