Abstract: The disclosure relates to a shading tape, a backlight unit and a display device. The shading tape includes: a tape body; a buffer layer located at a side of the tape body and provided with a through groove running through the buffer layer in a direction perpendicular to the tape body; a heat dissipating component located in the through groove; and a sealing layer located at a side of the buffer layer far away from the tape body and configured to close an opening of the through groove at the side of the buffer layer far away from the tape body.

Abstract: A jet nozzle structure of an impact-type freezer includes an orifice plate, a plurality of diversion channels and a plurality of jet nozzles. A plurality of circular openings in a linear arrangement are uniformly distributed in the orifice plate. The diversion channel is a hollow truncated cone including a top opening connected to the circular opening and a bottom opening connected to an inlet of the jet nozzle. The jet nozzle is a hollow cylinder and it has an outlet. A distance between two adjacent circular openings is 40-100 mm, diameter of the circular opening is 30-80 mm, and a height of the diversion channel is 20-60 mm. An inner diameter and a height of the jet nozzle are 6-15 mm and 20-40 mm, respectively. A distance between the bottom opening of the jet nozzle and a conveyor belt is 10-100 mm.

Abstract: Hydrophilic linkers are useful for linking drugs to cell-binding ligands in ligand-drug conjugates, such as antibody-drug conjugates. The ligand-drug conjugate includes a cell-binding ligand capable of binding to a particular cell population, and a drug connected to the ligand by a hydrophilic linker. The hydrophilic linker includes one or more hydrophilic groups that render the linker hydrophilic. The hydrophilic linker may also include functional groups at the two termini for coupling to the drug and the cell-binding ligand respectively.

Abstract: A light guide plate, a backlight and a display device are provided. The light guide plate includes a light incident surface, and a light emergent surface intersecting with the light incident surface, the light emergent surface being provided with a blank region close to the light incident surface; the blank region is provided with a plurality of convex point structures thereon. The light guide plate can reduce a disadvantageous effect of an adhesive preparation structure on the backlight and improve a light utilization rate of the backlight.

Abstract: The present disclosure provides a backlight source and a display device. The backlight source includes a back plate, a light bar and a rubber strip. The back plate is made of a metal material and includes a base, one first side portion and three second side portions, wherein the first side portion and the three second side portions are connected to the base and arranged at four sides of the base respectively. The first side portion includes a parallel part which is parallel to the base and a connection part which connects the parallel part to the base. The light bar is fixed on the parallel part. The rubber strip is fixed on at least one of the second side portions. An upper surface of the rubber strip and a surface of the parallel part form a support surface.

Abstract: A light bar, an edge-type backlight module and a display device. The light bar includes a circuit board and an integrated light emitting body arranged on the circuit board, wherein the integrated light emitting body includes a package and a plurality of light sources, and the package is configured to package the plurality of light sources.

Abstract: An RC-IGBT includes a semiconductor body incorporating a field stop zone where the base region and the field stop zone are both formed using an epitaxial process and the field stop zone has an enhanced doping profile to realize improved soft-switching performance for the semiconductor device. In alternate embodiments, RC-IGBT device, including the epitaxial layer field stop zone, are realized through a fabrication process that uses front side processing only to form the backside contact regions and the front side device region. The fabrication method forms an RC-IGBT device using front side processing to form the backside contact regions and then using wafer bonding process to flip the semiconductor structure onto a carrier wafer so that front side processing is used again to form the device region.

Abstract: Embodiments of the present disclosure provide a backlight assembly, a backlight module, and a display device. The backlight assembly of the present disclosure comprises a light guide plate and a light bar, wherein an edge of a light-entering end of the light guide plate comprises one or more first edge segments and one or more second edge segments, and the one or more first edge segments protrude from positions of the edge of the light-entering end of the light guide plate other than the one or more second edge segments in a direction facing away from the light guide plate. The light bar comprises one or more LED light bars disposed on one or more light-entering side of the one or more first edge segments and one or more line light sources disposed on one or more light-entering sides of the one or more second edge segments.

Abstract: The disclosure provides a mobile terminal medium casing and a mobile terminal. The mobile terminal medium casing includes a casing body having a receiving groove; a reflective sheet, a light guiding plate and an optical sheet group laminated in order, in a direction away from a bottom of the receiving groove, on the bottom of the receiving groove; and a light source assembly located in the receiving groove, an illuminant of the light source assembly being located at a light incidence side of the light guiding plate.

Abstract: A control resource region of an New Radio system slot structure may be separated into control resource sets, only some of which may be used for control transmissions. Aspects presented herein improve the efficient utilization of resources by enabling data transmission in resources of the DL control resource region and/or the UL control resource region. A UE receives an indication of a control resource set in a control resource region of a slot that may provide a control channel resource or a data channel resource and performs rate matching for data transmissions in the data channel based at least in part on the indication. The indication may be a semi-static indication, e.g., RRC signaling, of the control resource set.

Abstract: An RC-IGBT includes a semiconductor body formed having a base region incorporating a field stop zone where the base region and the field stop zone are both formed using an epitaxial process and the field stop zone has an enhanced doping profile to realize improved soft-switching performance for the semiconductor device. In alternate embodiments, RC-IGBT device, including the epitaxial layer field stop zone, are realized through a fabrication process that uses front side processing only to form the backside contact regions and the front side device region. The fabrication method forms an RC-IGBT device using front side processing to form the backside contact regions and then using wafer bonding process to flip the semiconductor structure onto a carrier wafer so that front side processing is used again to form the device region.

Abstract: A semiconductor device includes a semiconductor body having a base region incorporating a field stop zone where the base region and the field stop zone are both formed using an epitaxial process. Furthermore, the epitaxial layer field stop zone is formed with an enhanced doping profile to realize improved soft-switching performance for the semiconductor device. In some embodiments, the enhanced doping profile formed in the field stop zone includes varying, non-constant doping levels. In some embodiments, the enhanced doping profile includes one of an extended graded doping profile, a multiple stepped flat doping profile, or a multiple spike doping profile. The epitaxial layer field stop zone of the present invention enables complex field stop zone doping profiles to be used to obtain the desired soft-switching characteristics in the semiconductor device.

Abstract: An RC-IGBT includes a semiconductor body formed having a base region incorporating a field stop zone where the base region and the field stop zone are both formed using an epitaxial process and the field stop zone has an enhanced doping profile to realize improved soft-switching performance for the semiconductor device. In alternate embodiments, RC-IGBT device, including the epitaxial layer field stop zone, are realized through a fabrication process that uses front side processing only to form the backside contact regions and the front side device region. The fabrication method forms an RC-IGBT device using front side processing to form the backside contact regions and then using wafer bonding process to flip the semiconductor structure onto a carrier wafer so that front side processing is used again to form the device region.

Abstract: A backlight module and a display device are provided. The backlight module includes a plastic frame and a light guiding plate provided within the plastic frame. For each non-incident side of two parallel non-incident sides of the plastic frame, a respective space-keeping structure is provided at an end of a side edge on the non-incident side, with the end of the side edge on the non-incident side being close to a side edge of an incident side; and a side of the space-keeping structure that is away from an end surface of the light guiding plate is sealed with a cover structure. The present arrangement can effectively reduce bright lines at side edges occurring in the backlight module, and thus improve image-display quality of the backlight module.

Abstract: A backlight module and a display device are provided. The backlight module comprises a light guide plate, a sealant frame enclosing edges of the light guide plate, and a light source disposed at an end of the light guide plate. The light guide plate has a near light end near the light source and a far light end further away from the light source. The light guide plate includes at least one first positioning structure at the far light end. The sealant frame includes at least a second positioning structure disposed at a position corresponding to the first positioning structure at the far light end. The first positioning structure and the second positioning structure are engaged with each other to position the light guide plate on a plane parallel to a light emitting surface of the light guide plate.

Abstract: This invention discloses a semiconductor power device disposed in a semiconductor substrate including an active cell areas and a termination area. The semiconductor power device further comprises a plurality of gate trenches formed at a top portion of the semiconductor substrate in the active cell area wherein each of the gate trenches is partially filled with a conductive gate material with a top portion of the trenches filled by a high density plasma (HDP) insulation layer. The semiconductor power device further comprises mesa areas of the semiconductor substrate disposed between the gate trenches wherein the mesa areas are recessed and having a top mesa surface disposed vertically below a top surface of the HDP insulation layer wherein the HDP insulation layer covering over the conductive gate material constituting a stick-out boundary-defining layer surrounding the recessed mesa areas in the active cell areas between the gate trenches.

Abstract: A control resource region of an New Radio system slot structure may be separated into control resource sets, only some of which may be used for control transmissions. Aspects presented herein improve the efficient utilization of resources by enabling data transmission in resources of the DL control resource region and/or the UL control resource region. A UE receives an indication of a control resource set in a control resource region of a slot that may provide a control channel resource or a data channel resource and performs rate matching for data transmissions in the data channel based at least in part on the indication. The indication may be a semi-static indication, e.g., RRC signaling, of the control resource set.

Abstract: This invention discloses semiconductor power device that includes a plurality of top electrical terminals disposed near a top surface of a semiconductor substrate. Each and every one of the top electrical terminals comprises a terminal contact layer formed as a silicide contact layer near the top surface of the semiconductor substrate. The trench gates of the semiconductor power device are opened from the top surface of the semiconductor substrate and each and every one of the trench gates comprises the silicide layer configured as a recessed silicide contact layer disposed on top of every on of the trench gates slightly below a top surface of the semiconductor substrate surround the trench gate.

Abstract: Methods, systems, and devices for wireless communication are disclosed. Flexible interleaving configurations may be employed to support various operations, including beamforming. Flexible interleaving may include dynamically or semi-statically determining a combination of bit-level, tone-level, tone-group level, or other interleaving technique for one or more transmissions. The interleaving configuration may be based on delay spread, a coherence bandwidth, a signal to noise ratio, a Doppler spread, or a combination thereof. An interleaving configuration may be a determination may be made by a base station or some other network entity and explicitly signaled to another device. Additionally or alternatively, the determination may be made based on one or more implicit rules, which may be based on a variety of factors (e.g., available bandwidth, modulation and coding scheme (MCS), code block (CB) size). Further, interleaving may be enabled (or disabled) under certain conditions.

Abstract: The present disclosure provides a backlight source and a display device. The backlight source includes a back plate, a light bar and a rubber strip. The back plate is made of a metal material and includes a base, one first side portion and three second side portions, wherein the first side portion and the three second side portions are connected to the base and arranged at four sides of the base respectively. The first side portion includes a parallel part which is parallel to the base and a connection part which connects the parallel part to the base. The light bar is fixed on the parallel part. The rubber strip is fixed on at least one of the second side portions. An upper surface of the rubber strip and a surface of the parallel part form a support surface.