Abstract: Methods, systems, and devices for wireless communication are disclosed. Flexible interleaving configurations may be employed to support various operations, including beamforming. Flexible interleaving may include dynamically or semi-statically determining a combination of bit-level, tone-level, tone-group level, or other interleaving technique for one or more transmissions. The interleaving configuration may be based on delay spread, a coherence bandwidth, a signal to noise ratio, a Doppler spread, or a combination thereof. An interleaving configuration may be a determination may be made by a base station or some other network entity and explicitly signaled to another device. Additionally or alternatively, the determination may be made based on one or more implicit rules, which may be based on a variety of factors (e.g., available bandwidth, modulation and coding scheme (MCS), code block (CB) size). Further, interleaving may be enabled (or disabled) under certain conditions.

Abstract: The present disclosure provides a backlight source and a display device. The backlight source includes a back plate, a light bar and a rubber strip. The back plate is made of a metal material and includes a base, one first side portion and three second side portions, wherein the first side portion and the three second side portions are connected to the base and arranged at four sides of the base respectively. The first side portion includes a parallel part which is parallel to the base and a connection part which connects the parallel part to the base. The light bar is fixed on the parallel part. The rubber strip is fixed on at least one of the second side portions. An upper surface of the rubber strip and a surface of the parallel part form a support surface.

Abstract: A control resource region of an New Radio system slot structure may be separated into control resource sets, only some of which may be used for control transmissions. Aspects presented herein improve the efficient utilization of resources by enabling data transmission in resources of the DL control resource region and/or the UL control resource region. A UE receives an indication of a control resource set in a control resource region of a slot that may provide a control channel resource or a data channel resource and performs rate matching for data transmissions in the data channel based at least in part on the indication. The indication may be a semi-static indication, e.g., RRC signaling, of the control resource set.

Abstract: This invention discloses a semiconductor power device disposed in a semiconductor substrate including an active cell areas and a termination area. The semiconductor power device further comprises a plurality of gate trenches formed at a top portion of the semiconductor substrate in the active cell area wherein each of the gate trenches is partially filled with a conductive gate material with a top portion of the trenches filled by a high density plasma (HDP) insulation layer. The semiconductor power device further comprises mesa areas of the semiconductor substrate disposed between the gate trenches wherein the mesa areas are recessed and having a top mesa surface disposed vertically below a top surface of the HDP insulation layer wherein the HDP insulation layer covering over the conductive gate material constituting a stick-out boundary-defining layer surrounding the recessed mesa areas in the active cell areas between the gate trenches.

Abstract: This invention discloses semiconductor power device that includes a plurality of top electrical terminals disposed near a top surface of a semiconductor substrate. Each and every one of the top electrical terminals comprises a terminal contact layer formed as a silicide contact layer near the top surface of the semiconductor substrate. The trench gates of the semiconductor power device are opened from the top surface of the semiconductor substrate and each and every one of the trench gates comprises the silicide layer configured as a recessed silicide contact layer disposed on top of every on of the trench gates slightly below a top surface of the semiconductor substrate surround the trench gate.

Abstract: Catalyst compositions suitable for use in the exhaust gas recycle stream of an internal combustion engine are provided. Such catalyst compositions typically provide significant amounts of methane in addition to syngas. A reformer incorporating such a catalyst for use in an exhaust gas recycle portion of an internal combustion engine powertrain is described. A powertrain incorporating such a reformer, a method of increasing the octane rating of an exhaust gas recycle stream, and a method of operating an internal combustion engine using methane-assisted combustion are also described.

Abstract: Techniques are described for wireless communication at a wireless device. One method includes receiving a control channel and a data channel over a radio frequency spectrum, decoding the control channel, and decoding a packet received over the data channel. The control channel indicates a parameter of a codeblock group (CBG). The parameter of the CBG may indicate at least one of a number of codeblocks (CBs) associated with the CBG, a CBG size, or a combination thereof. The packet may include a set of CBGs. Each CBG of the set of CBGs may be associated with a set of encoded CBs and a CBG-level CRC. The associated CBG-level CRC for each CBG may be based at least in part on the parameter of the CBG. Each encoded CB may be encoded based at least in part on a low-density parity-check (LDPC) encoding scheme.

Abstract: The disclosure provides a mobile terminal medium casing and a mobile terminal. The mobile terminal medium casing includes a casing body having a receiving groove; a reflective sheet, a light guiding plate and an optical sheet group laminated in order, in a direction away from a bottom of the receiving groove, on the bottom of the receiving groove; and a light source assembly located in the receiving groove, an illuminant of the light source assembly being located at a light incidence side of the light guiding plate.

Abstract: A dual band communication method and a wireless local area network (WLAN) device, First determining a service type of a service in a switching period according to a preset policy, where the switching period includes one first timeslot in which a first radio frequency (RF) channel works and one adjacent second timeslot in which a second RF channel works, and determining, according to the determined service type and a preset service quality requirement corresponding to the service type, maximum duration of the switching period in which the service quality requirement is met, and when time division multiplexing (TDM) is performed on a baseband processor, controlling the switching between the first RF channel and the second RF channel according to the maximum duration, hence actual duration of the switching period is less than or equal to the maximum duration.

Abstract: Hydrophilic linkers are useful for linking drugs to cell-binding ligands in ligand-drug conjugates, such as antibody-drug conjugates. The ligand-drug conjugate includes a cell-binding ligand capable of binding to a particular cell population, and a drug connected to the ligand by a hydrophilic linker. The hydrophilic linker includes one or more hydrophilic groups that render the linker hydrophilic. The hydrophilic linker may also include functional groups at the two termini for coupling to the drug and the cell-binding ligand respectively.

Abstract: A tunnel field-effect transistor device includes a p-type GaN source layer, an ntype GaN drain layer, and an interlayer interfaced between the source-layer and the drain layer. These devices employ polarization engineering in GaN/InN heterojunctions to achieve appreciable interband tunneling current densities. In one example, the interlayer includes an Indium Nitride (InN) layer. In one example, the interlayer includes a graded Indium gallium nitride layer and an InN layer. In one example, the interlayer may include a graded Indium gallium nitride (InxGa1-xN) layer and an Indium gallium nitride (InGaN) layer. In one example, the tunnel field-effect transistor device includes an in-line configuration. In one example, the tunnel field-effect transistor device includes a side-wall configuration. In one example, the tunnel field-effect transistor device includes a nanowire cylindrical gate-all-around geometry to achieve a high degree of gate electrostatic control.

Abstract: The present disclosure discloses a plastic frame assembly. In one embodiment, the plastic frame assembly includes a plastic frame and a heat-conducting component which are formed in an integrated structure; wherein, the plastic frame includes an engagement structure configured to be engaged with an other component; and, the heat-conducting component includes a heat-conducting member and a plurality of protrusions protruded from a surface of the heat-conducting member, the protrusions being inserted into the plastic frame at the engagement structure thereof. The present disclosure also discloses a backlight source including this plastic frame assembly and a display apparatus including the abovementioned backlight source.

Abstract: The present disclosure provides a backlight source and a display apparatus. The backlight source comprises: a light guide plate and an adhesive frame. The light guide plate comprises: a light incidence face, a light exit face connected to the light incidence face, a bottom face opposed to the light exit face, and at least one lateral faces configured to connect the light exit face to the bottom face and to be inclined with respect to the bottom face, a projection of the at least one lateral faces with respect to the bottom face falling within the bottom face. The adhesive frame is located at a periphery of the light guide plate, wherein faces of the adhesive frame which face towards the respective lateral faces are matched with the respective lateral faces.

Abstract: Wireless communications systems and methods related to allocating resource blocks and resource block groups in a system band in order to reduce overhead associated with resource allocation. To reduce overhead, the wireless communication device communicates a signal in a control channel that indicates a general area and a resource block in the general area that stores data. The wireless communication device then communicates multiple resource blocks that include the resource block and communicates the data in the resource block using the signal. To reduce overhead, the wireless communication device also communicates multiple mappings for each resource block group into a set of resource blocks and a signal in a control channel that selects one of the multiple mappings. The communication device then determines resource blocks that are included in the resource block group according to the mapping, and communicates data in these resource blocks.

Abstract: A tunnel field-effect transistor device includes a p-type GaN source layer, an n-type GaN drain layer, and an interlayer interfaced between the source-layer and the drain layer. In one example, the interlayer includes an Indium Nitride (InN) layer. In one example, the interlayer includes a graded Indium gallium nitride layer and an InN layer. In one example, the interlayer may include a graded Indium gallium nitride (InxGa1-xN) layer and an Indium gallium nitride (InGaN) layer. In one example, the tunnel field-effect transistor device includes an in-line configuration. In one example, the tunnel field-effect transistor device includes a side-wall configuration.

Abstract: A plurality of gate trenches is formed into a semiconductor substrate in an active cell region. One or more other trenches are formed in a different region. Each gate trench has a first conductive material in lower portions and a second conductive material in upper portions. In the gate trenches, a first insulating layer separates the first conductive material from the substrate, a second insulating layer separates the second conductive material from the substrate and a third insulating material separates the first and second conductive materials. The other trenches contain part of the first conductive material in a half-U shape in lower portions and part of the second conductive material in upper portions. In the other trenches, the third insulating layer separates the first and second conductive materials. The first insulating layer is thicker than the third insulating layer, and the third insulating layer is thicker than the second.

Abstract: A semiconductor device, comprising: a substrate; an active gate trench in the substrate; a source polysilicon pickup trench in the substrate; a polysilicon electrode disposed in the source polysilicon pickup trench; a gate pickup trench in the substrate; a first conductive region and a second conductive region disposed in the gate pickup trench, the first conductive region and the second conductive region being separated by oxide, wherein at least a portion of the oxide surrounding the first conductive region in the gate pickup trench is thicker than at least a portion of the oxide under the second conductive region; and a body region in the substrate.

Abstract: Embodiments of the present invention provide a dual band adaptive concurrent processing method and apparatus. In the embodiments of the present invention, by using statistical information of services at first and a second frequency bands in the Nth adjustment period, performance of the services at the frequency bands in an adjustment period may be acquired. Based on the statistical information, and a quality of service (QoS) requirement that the services at the two frequency bands need to meet, a second coefficient of proportionality between timeslots occupied by the services at the two frequency bands in the (N+1)th adjustment period may be determined, so that switching control on first and second channels may be performed in the (N+1)th adjustment period according to the determined second coefficient of proportionality.

Abstract: The present disclosure relates to the field of display design, and in particular to a backlight back plate, an adhesive-metal integrated structure of the backlight source, a backlight source and a display panel. The backlight back plate includes a bottom plate and protrusions. The protrusions are arranged at an opening at a side edge of the bottom plate, which are arranged on the bottom plate and extend into an adhesive that forms an integral structure with the backlight back plate by an injection molding and being provided with a hole into which the adhesive is filled.