Abstract: The present invention discloses a bead wire wrapper device and a wrapper method.

Abstract: A conjugation of a cytotoxic drug to a cell-binding molecule with a bis-linker (dual-linker) as shown in Formula (I). Bis-linkage methods of making a conjugate of a cytotoxic drug/molecule to a cell-binding agent in a specific manner are also described, as well as application of the conjugates for the treatment of a cancer, or an autoimmune disease, or an infectious disease. wherein “” is an optional bond; X, Y, Z1, and Z2 are a functional group; m1 and n are a integer; L1 and L2 are a linker.

Abstract: A backlight source module and a display device are provided. The backlight source module includes a back plate structure and a rubber member. The back plate structure includes a bottom plate, and a first side plate and a second side plate respectively connected with the bottom plate, and the first side plate and the second side plate oppose each other. A light-emitting portion, a light-guiding component and the rubber member are sequentially disposed on the bottom plate along a first direction pointing from the first side plate to the second side plate. The rubber member is only disposed at the second side plate.

Abstract: The present invention relates to novel linkers containing a 2,3-disubstituted succinic group, or 2-monosubstituted, or 2,3-disubstituted fumaric or maleic (trans (E)- or cis (Z)-butenedioic), or acetylenedicarboxyl group for conjugation of a cytotoxic agent, and/or one or more different functional molecules per linker to a cell-binding molecule, through bridge linking pairs of thiols on the cell-binding molecule specifically. The invention also relates to methods of making such linkers, and of using such linkers in making homogeneous conjugates, as well as of application of the conjugates in treatment of cancers, infections and autoimmune disorders.

Abstract: The present invention relates to novel linkers containing a 2,3-disubstituted succinic group, or 2-monosubstituted, or 2,3-disubstituted fumaric or maleic (trans (E)- or cis (Z)-butenedioic), or acetylenedicarboxyl group for conjugation of a cytotoxic agent, and/or one or more different functional molecules per linker to a cell-binding molecule, through bridge linking pairs of thiols on the cell-binding molecule specifically. The invention also relates to methods of making such linkers, and of using such linkers in making homogeneous conjugates, as well as of application of the conjugates in treatment of cancers, infections and autoimmune disorders.

Abstract: A device is disclosed that includes a source region positioned in a first doped well region in a semiconductor substrate and a drain region positioned in a second doped well region in the substrate, wherein there is a well gap between the first doped well region and the second doped well region. The device also includes a gate structure that includes a first gate insulation layer positioned above an upper surface of the substrate, wherein the first gate insulation layer extends from a drain-side sidewall of the gate structure to a location above the well gap, and a second gate insulation layer having a first portion positioned above the upper surface of the substrate and a second portion positioned above the first gate insulation layer.

Abstract: Methods, systems, and devices for wireless communication are disclosed. Flexible interleaving configurations may be employed to support various operations, including beamforming. Flexible interleaving may include dynamically or semi-statically determining a combination of bit-level, tone-level, tone-group level, or other interleaving technique for one or more transmissions. The interleaving configuration may be based on delay spread, a coherence bandwidth, a signal to noise ratio, a Doppler spread, or a combination thereof. An interleaving configuration may be a determination may be made by a base station or some other network entity and explicitly signaled to another device. Additionally or alternatively, the determination may be made based on one or more implicit rules, which may be based on a variety of factors (e.g., available bandwidth, modulation and coding scheme (MCS), code block (CB) size). Further, interleaving may be enabled (or disabled) under certain conditions.

Abstract: The present disclosure relates to semiconductor structures and, more particularly, to unitary Cascode cells with resistance and capacitance optimization, and methods of manufacture. The structure includes a common source FET (CS-FET) in a first portion of a single common semiconductor region, the CS-FET comprising a source region and a drain region, a common gate FET (CG-FET) in a second portion of the single common semiconductor region, the CG-FET comprising a source region and a drain region, and a doped connecting region of the single common semiconductor region, connecting the drain of the CS-FET and the source of the CG-FET.

Abstract: The present disclosure relates to semiconductor structures and, more particularly, to unitary Cascode cells with resistance and capacitance optimization, and methods of manufacture. The structure includes a common source FET (CS-FET) in a first portion of a single common semiconductor region, the CS-FET comprising a source region and a drain region, a common gate FET (CG-FET) in a second portion of the single common semiconductor region, the CG-FET comprising a source region and a drain region, and a doped connecting region of the single common semiconductor region, connecting the drain of the CS-FET and the source of the CG-FET.

Abstract: The present invention relates to linkers having a group of propiolyl, substituted acryl(acryloyl), or disubstituted propanoyl, and using such linkers for the conjugation of compounds, in particular, cytotoxic agents to a cell-binding molecule.

Abstract: The present invention relates to novel linkers containing a 2,3-disubstituted succinic group, or 2-monosubstituted, or 2,3-disubstituted fumaric or maleic (trans (E)- or cis (Z)-butenedioic), or acetylenedicarboxyl group for conjugation of a cytotoxic agent, and/or one or more different functional molecules per linker to a cell-binding molecule, through bridge linking pairs of thiols on the cell-binding molecule specifically. The invention also relates to methods of making such linkers, and of using such linkers in making homogeneous conjugates, as well as of application of the conjugates in treatment of cancers, infections and autoimmune disorders.

Abstract: Provided is a saddle system and a bicycle, wherein the saddle system comprises a follower device, and the follower device is arranged on the seat rod of the bicycle for mounting the saddle. The follower device comprises a left and right rotating assembly and a left and right turnover assembly which are interconnected, wherein the left and right rotating assembly is rotated leftward or rightward with respect to the left and right turnover assembly, so that the saddle rotates leftward or rightward with respect to the seat rod. The left and right turnover assembly is turned over leftward or rightward with respect to the left and right rotating assembly to make the saddle is turned over leftward or rightward with respect to the seat rod.

Abstract: The aerator system incorporates a land-based or water-based floating solar activated water aeration system with integrated linear diaphragm air compressor and controller to provide improved oxygen addition into water. The system uses low voltage and an advanced controller with max power point tracking (MPPT) technique, which converts the solar panel photovoltaic low voltage DC to low voltage AC and allows power generated from each solar panel to be fully utilized.

Abstract: A semiconductor device includes a semiconductor body having a base region incorporating a field stop zone where the base region and the field stop zone are both formed using an epitaxial process. Furthermore, the epitaxial layer field stop zone is formed with an enhanced doping profile to realize improved soft-switching performance for the semiconductor device. In some embodiments, the enhanced doping profile includes multiple doped regions with peak doping levels where a first doped region adjacent to a first side of the field stop zone has a first peak doping level that is not higher than a last peak doping level of a last doped region adjacent to the base region. The epitaxial layer field stop zone of the present invention enables complex field stop zone doping profiles to be used to obtain the desired soft-switching characteristics in the semiconductor device.

Abstract: Integrated circuit (IC) structures including asymmetric, recessed source and drain regions and methods for forming are provided. In an example, the IC structure includes a substrate, a gate structure over the substrate, first and second spacers contacting respective, opposite sidewalls of the gate structure, and source and drain regions on opposite sides of the gate structure. In one configuration, the source region includes an upper source portion having a first lateral width, and a lower source portion having a second lateral width greater than the first lateral width, and the drain region includes an upper drain portion having a third lateral width, and a lower drain portion having a fourth lateral width that is substantially the same as the third lateral width.

Abstract: Integrated circuit (IC) structures including buried insulator layer and methods for forming are provided. In a non-limiting example, a IC structure includes: a substrate; a first fin over the substrate; a source region and a drain region in the first fin; a first gate structure and a second gate structure over the first fin, the first and the second gate structures positioned between the source region and the drain region; and a buried insulator layer including a portion disposed under the first fin.

Abstract: A process is applied to develop a plurality of reverse conducting insulated gate bipolar transistors (RCIGBTs). The process comprises the steps of providing a wafer, applying a first grinding process, patterning a mask, applying an etching process, removing the mask, implanting N++ type dopant, applying a second grinding process forming a TAIKO ring, implanting P+ type dopant, annealing and depositing TiNiAg or TiNiVAg, removing the TAIKO ring, attaching a tape, and applying a singulation process. The mask can be a soft mask or a hard mask. The etching process can be a wet etching only; a wet etching followed by a dry etching; or a dry etching only.

Abstract: Structures for a field-effect transistor and methods of forming a structure for a field-effect transistor. First and second gate structures extend over a semiconductor body. The first gate structure includes a first sidewall and a second sidewall opposite the first sidewall, and the second gate structure includes a sidewall adjacent to the first sidewall of the first gate structure. A first source/drain region includes a first epitaxial semiconductor layer positioned between the first sidewall of the first gate structure and the sidewall of the second gate structure. A second source/drain region includes a second epitaxial semiconductor layer positioned adjacent to the second sidewall of the first gate structure. The first sidewall of the first gate structure and the sidewall of the second gate structure are separated by a distance that is greater than a width of the first epitaxial semiconductor layer.

Abstract: Structures for a field-effect transistor and methods of forming a structure for a field-effect transistor. A gate structure extends over a semiconductor body, a first source/drain region includes an epitaxial semiconductor layer on a first portion of the semiconductor body, and a second source/drain region is positioned in a second portion of the semiconductor body. The gate structure includes a first sidewall and a second sidewall opposite the first sidewall, the first source/drain region is positioned adjacent to the first sidewall of the gate structure, and the second source/drain region is positioned adjacent to the second sidewall of the gate structure. The first source/drain region has a first width, and the second source/drain region has a second width that is greater than the first width.