Abstract: Embodiments include exerciser device placement in the development of an integrated circuit. Aspects of the invention include obtaining a design of an integrated circuit and creating a dynamic power blockage map for the integrated circuit. Aspects also include updating the integrated circuit design by placing one or more exercisers on the integrated circuit, wherein a location of the one or more exercisers on the integrated circuit is based on at least in part on the dynamic power blockage map. Based on a determination that the updated integrated circuit design complies with one or more design constraints, aspects further include outputting the updated integrated circuit design.

Abstract: The method and systems described herein provide for identifying and mitigating undesirable power or voltage fluctuations in regions of a semiconductor device. For example, embodiments include detecting a region, such as an individual processor, of a processor chip is exhibiting a reduced power draw and a resulting localized voltage spike (e.g., a spike that exceeds Vmax) that would accelerate overall device end-of-life (EOL). The described systems respond by activating circuits or current generators located in the given region to draw additional power via a protective current. The protective current lowers the local voltages spikes back to within some pre-specified range (e.g., below a Vmax). The resulting reduction in the time above Vmax in testing reduces the number of devices that will need to be discarded due to Vmax violations as well as increases the expected reliability and lifespan of the device in operation.

Abstract: The method and systems described herein provide for identifying and mitigating undesirable power or voltage fluctuations in regions of a semiconductor device. For example, embodiments include detecting a region, such as an individual processor, of a processor chip is exhibiting a reduced power draw and a resulting localized voltage spike (e.g., a spike that exceeds Vmax) that would accelerate overall device end-of-life (EOL). The described systems respond by activating circuits or current generators located in the given region to draw additional power via a protective current. The protective current lowers the local voltages spikes back to within some pre-specified range (e.g., below a Vmax). The resulting reduction in the time above Vmax in testing reduces the number of devices that will need to be discarded due to Vmax violations as well as increases the expected reliability and lifespan of the device in operation.

Abstract: A method for testing a circuit includes performing, by a test engine, a test of bit write to a memory. The test includes defining a bit group based on a set of bits from an address of a memory location. The test further includes generating a bit mask for the bit group. The test further includes performing a bit write operation to the address to store a sequence of bits, the sequence of bits selected using a predetermined bit pattern. The test further includes reading content of the address. The test also includes comparing, using the bit mask, only bits corresponding to the bit group from the sequence of bits and from the content of the address.

Abstract: A system comprises a plurality of regions, wherein ones of the plurality of regions are partitioned from others of the plurality of regions and at least one of the plurality of regions is a region under test. The system comprises at least one noise generator configured to generate noise in at least the region under test, and at least one noise monitor configured to monitor one or more effects of the noise generated in the region under test. The system comprises a test controller configured to: cause the at least one noise generator to generate the noise in at least the region under test; receive information from the at least one noise monitor indicative of the one or more effects of the noise generated in the region under test; and determine one or more conditions based on at least a portion of the received information.

Abstract: A method for testing a circuit includes performing, by a test engine, a test of bit write to a memory. The test includes defining a bit group based on a set of bits from an address of a memory location. The test further includes generating a bit mask for the bit group. The test further includes performing a bit write operation to the address to store a sequence of bits, the sequence of bits selected using a predetermined bit pattern. The test further includes reading content of the address. The test also includes comparing, using the bit mask, only bits corresponding to the bit group from the sequence of bits and from the content of the address.

Abstract: A system may include an integrated circuit having repair select bits coupled with a central repair register. The repair register may be configured to determine how to broadcast multiple repair actions to a group of repairable circuits. Inclusion of the repair register may function to reduce the total number of latches used to hold repair information.

Abstract: Aspects of the present invention disclose a method for avoiding overvoltages of a processor chip. The method includes one or more processors identifying one or more processing units of a computing device. The method further includes determining respective activity levels of one or more processing elements of the one or more processing units of the computing device. The method further includes determining respective voltages of the one or more processing units of the computing device. The method further includes regulating the respective voltages of the one or more processing units of the computing device based at least in part on the respective activity levels of the one or more processing elements.

Abstract: A system may include an integrated circuit having repair select bits coupled with a central repair register. The repair register may be configured to determine how to broadcast multiple repair actions to a group of repairable circuits. Inclusion of the repair register may function to reduce the total number of latches used to hold repair information.

Abstract: Aspects of the present invention disclose a method for avoiding overvoltages of a processor chip. The method includes one or more processors identifying one or more processing units of a computing device. The method further includes determining respective activity levels of one or more processing elements of the one or more processing units of the computing device. The method further includes determining respective voltages of the one or more processing units of the computing device. The method further includes regulating the respective voltages of the one or more processing units of the computing device based at least in part on the respective activity levels of the one or more processing elements.

Abstract: A method and a circuit for implementing dynamic single event upset (SEU) detection and correction, and a design structure on which the subject circuit resides are provided. The circuit implements detection, correction and scrubbing of unwanted state changes due to SEUs, noise or other event in semiconductor circuits. The circuit includes a plurality of L1 L2 latches connected in a chain, each L1 L2 latch includes an L1 latch and an L2 latch with the L2 latch having a connected output monitored for a flip. A single L2 detect circuit exclusive OR (XOR) is connected to each L2 latch. An L2 detect circuit XOR tree includes an input connected to a true output of a respective L2 latch in the chain. An L2 clock (LCK) trigger circuit is connected to an output of the L2 detect circuit XOR tree and is shared across each of the plurality of L1 L2 latches for correcting bit flip errors.

Abstract: A method comprises activating an interval timer to expire in a calibration time interval and, in response to the timer expiring, performing an impedance analysis of an electronic network. The impedance analysis can use time-domain reflectometry. Based on the analysis, the method can calibrate a variable impedance device to have a first impedance and re-activate the timer. The method can perform a second impedance analysis based on calibrating the variable impedance device. The method can include determining a drift rate and modifying the calibration time interval. The variable impedance device can comprise a phase-change material (PCM), and the time interval can correspond to a retention time of the PCM and/or a dynamic drift rate. A system comprising a segment of an electronic network, a timer, a variable impedance device, and an impedance tuning system can embody operations of the method.

Abstract: A method and a circuit for implementing single event upset (SEU) parity detection, and a design structure on which the subject circuit resides are provided. The circuit implements detection of unwanted state changes due to SEUs, noise or other event in a latch having a default state of zero. The latch includes an L1 latch and an L2 latch with the L2 latch having the connected output and is used and monitored for a flip. A pair of series-connected field effect transistors (FETs) is connected between a drive input of a parity control circuit and ground potential. An inverted output of the L1 latch and a true output of the L2 latch is applied to a respective gate of the pair of series-connected FETs.

Abstract: A method and a circuit for implementing dynamic single event upset (SEU) detection and correction, and a design structure on which the subject circuit resides are provided. The circuit implements detection, correction and scrubbing of unwanted state changes due to SEUs, noise or other event in semiconductor circuits. The circuit includes a plurality of L1 L2 latches connected in a chain, each L1 L2 latch includes an L1 latch and an L2 latch with the L2 latch having a connected output monitored for a flip. A single L2 detect circuit exclusive OR (XOR) is connected to each L2 latch. An L2 detect circuit XOR tree includes an input connected to a true output of a respective L2 latch in the chain. An L2 clock (LCK) trigger circuit is connected to an output of the L2 detect circuit XOR tree and is shared across each of the plurality of L1 L2 latches for correcting bit flip errors.

Abstract: A method and a circuit for implementing single event upset (SEU) parity detection, and a design structure on which the subject circuit resides are provided. The circuit implements detection of unwanted state changes due to SEUs, noise or other event in a latch having a default state of zero. The latch includes an L1 latch and an L2 latch with the L2 latch having the connected output and is used and monitored for a flip. A pair of series-connected field effect transistors (FETs) is connected between a drive input of a parity control circuit and ground potential. An inverted output of the L1 latch and a true output of the L2 latch is applied to a respective gate of the pair of series-connected FETs.

Abstract: A computer-implemented method for command-address-control calibration of a memory device includes starting, via a processor, a controller clock for the memory device, releasing, via the processor, a reset on the memory device, running, via the processor, a calibration pattern for calibrating the memory device by placing the memory device in calibration mode, where the calibration pattern is initiated prior to an initialization of the memory device, calibrating, via the processor, the memory device with a calibration setting based on the calibration pattern, and initializing the memory device based on the calibration setting.

Abstract: Embodiments of the present invention provide systems and methods for re-balancing the stability of a SRAM cell. Embodiments of the present invention identify SRAM cells with negative voltage threshold margins and write a “zero” state bit with in the bi-stable flip-flop of the SRAM. Raising the voltage of the CMOS set containing the “zero” state bit and selective transistor biasing, skews the “zero” state bit towards the complementary “one” state bit. This induces an increase voltage thresholds of the identified SRAM cells.

Abstract: Aspects include a computer-implemented method for scan diagnostic logic circuit insertion in a circuit design topology. A method includes evaluating a scan chain of the circuit design topology, the scan chain comprising a plurality of scan latches and a plurality of physical structures, the evaluating including identifying the plurality of physical structures in the scan chain. The method also includes identifying one of the plurality of physical structures as a physical structure of interest, and responsive to the identification of the physical structure of interest, targeting the physical structure of interest, the targeting comprising inserting scan diagnostic logic at a location in the scan chain that is based on a location of the physical structure of interest in the scan chain.

Abstract: Embodiments of the present invention provide systems and methods for re-balancing the stability of a SRAM cell. Embodiments of the present invention identify SRAM cells with negative voltage threshold margins and write a “zero” state bit with in the bi-stable flip-flop of the SRAM. Raising the voltage of the CMOS set containing the “zero” state bit and selective transistor biasing, skews the “zero” state bit towards the complementary “one” state bit. This induces an increase voltage thresholds of the identified SRAM cells.

Abstract: An apparatus and method may detect and reduce noise on data busses by adjusting the phase of the input/output (I/O) signals in a controlled, predictable manner. The control may allow a maximum data rate to be achieved. In one embodiment, an algorithm used to determine phase change data may be handled by a feedback loop and may be dynamically adjusted. The system may detect noise on rails and critical signals for logging in call home data. The system may maintain a database of settings as a function of a workload. The system may be used in the field as the workload changes to determine that a signal has reached a first threshold. In response to determining that the signal has reached the first threshold, an alert is initiated. A system may determine that the signal has reached a second threshold. In response to determining that the signal has reached the second threshold, the signal may be coupled to logic circuitry.