Abstract: A method for providing error detection and/or correction to an array of storage cells includes determining a sensitive direction and an insensitive direction of the storage cells and adding a first error control mechanism to the array of storage cells in the insensitive direction. The method also includes adding a second error control mechanism to the array of storage cells in the sensitive direction. The second error control mechanism has a higher Hamming distance than the first error control mechanism.

Abstract: A method for configuring the placement of a plurality of storage cells on an integrated circuit includes grouping the plurality of storage cells into a plurality of words, where each of the plurality of words is protected by an error control mechanism. The method also includes placing each of the storage cells on the integrated circuit such that a distance between any two of the storage cells belonging to one of the plurality of words is greater than a minimum distance. The minimum distance is configured such that a probability of any of the plurality of words experiencing multiple radiation induced errors is below a threshold value.

Abstract: A method for adding error detection, or error detection combined with error correction, to a plurality of register banks includes grouping the plurality of register banks into an array. The method also includes adding a first error control mechanism to the array in a first direction and adding a second error control mechanism to the array in a second direction. The method further includes adding a product code to the array, the product code including applying the second error control mechanism to a plurality of bits of the first error control mechanism.

Abstract: A voltage selection mechanism is provided for switching between multiple voltages without causing a direct current (DC) that may further stress storage elements due to excessive power consumption and electro-migration effects. The voltage selection mechanism comprises cross-coupled circuitry, which comprises a first positive-channel field effect transistor (PFET) and a second PFET. The voltage selection mechanism further comprises diode circuitry, which comprises a third PFET and a fourth PFET.

Abstract: A method for providing error detection and/or correction to an array of storage cells includes determining a sensitive direction and an insensitive direction of the storage cells and adding a first error control mechanism to the array of storage cells in the insensitive direction. The method also includes adding a second error control mechanism to the array of storage cells in the sensitive direction. The second error control mechanism has a higher Hamming distance than the first error control mechanism.

Abstract: A method for adding error detection, or error detection combined with error correction, to a plurality of register banks includes grouping the plurality of register banks into an array. The method also includes adding a first error control mechanism to the array in a first direction and adding a second error control mechanism to the array in a second direction. The method further includes adding a product code to the array, the product code including applying the second error control mechanism to a plurality of bits of the first error control mechanism.

Abstract: A method for configuring the placement of a plurality of storage cells on an integrated circuit includes grouping the plurality of storage cells into a plurality of words, where each of the plurality of words is protected by an error control mechanism. The method also includes placing each of the storage cells on the integrated circuit such that a distance between any two of the storage cells belonging to one of the plurality of words is greater than a minimum distance. The minimum distance is configured such that a probability of any of the plurality of words experiencing multiple radiation induced errors is below a threshold value.

Abstract: A system for providing error detection or correction on a data bus includes one or more caches coupled to a central processing unit and to a hub by one or more buses. The system also includes a plurality of arrays, each array disposed on one of the buses. Each of the arrays includes a plurality of storage cells disposed in an insensitive direction and an error control mechanism configured to detect an error in the plurality of storage cells.

Abstract: A voltage selection mechanism is provided for switching between multiple voltages without causing a direct current (DC) that may further stress storage elements due to excessive power consumption and electro-migration effects. The voltage selection mechanism comprises cross-coupled circuitry, which comprises a first positive-channel field effect transistor (PFET) and a second PFET. The voltage selection mechanism further comprises diode circuitry, which comprises a third PFET and a fourth PFET.

Abstract: An array built-in self test (ABIST) system includes a first latch having a first data input, a first scan input and first output and a second latch having a second data input, a second scan input and a second output. The system also includes a first ABIST logic block coupled to the first output that compares a first expected value with a first data value received at the first data input and provided to the first ABIST logic block after a first clock is applied to the first latch. The system also includes a second ABIST logic block coupled to the second output that compares a second expected value with a second data value received at the second data input and provided to the second ABIST logic block after a second clock is applied to the second latch.

Abstract: An array built-in self test (ABIST) system includes a first latch having a first data input, a first scan input and first output and a second latch having a second data input, a second scan input and a second output. The system also includes a first ABIST logic block coupled to the first output that compares a first expected value with a first data value received at the first data input and provided to the first ABIST logic block after a first clock is applied to the first latch. The system also includes a second ABIST logic block coupled to the second output that compares a second expected value with a second data value received at the second data input and provided to the second ABIST logic block after a second clock is applied to the second latch.

Abstract: A computing system is provided which includes a processor having a cache memory. The cache memory includes a plurality of independently configurable subdivisions, each subdivision including a memory array. A service element (SE) of the computing system is operable to cause a built-in-self-test (BIST) to be executed to test the cache memory, the BIST being operable to determine whether any of the subdivisions is defective. When it is determined that one of the subdivisions of the cache memory determined defective by the BIST is non-repairable, the SE logically deletes the defective subdivision from the system configuration, and the SE is operable to permit the processor to operate without the logically deleted subdivision. The SE is further operable to determine that the processor is defective when a number of the defective subdivisions exceeds a threshold.

Abstract: Memory array built in self testing utilizing including a simple data history table. The table is used to track failing locations observed during any level of assembly test of processor or logic semiconductor chips where the chips contain SRAM macros with redundant elements for failure relief.

Abstract: Systems, methods and apparatus are provided for isolating a defect in a scan chain. The invention includes modifying a first test mode of a plurality of latches included in a scan chain, operating the latches in the modified first test mode, and operating the plurality of latches included in the scan chain in a second test mode. A portion of the scan chain adjacent and following a stuck-@-0 or stuck-@-1 fault in the scan chain may store and/or output a value complementary to the value on the output of the previous portion of the scan chain due to the fault. Such values may be unloaded from the scan chain and used for diagnosing (e.g., isolating a defect in) the defective scan chain. Numerous other aspects are provided.

Abstract: Detecting and correcting errors in arrays after ABIST testing, after ABIST testing, detected errors are faults are isolated by blowing a fuse.

Abstract: An SRAM cell that is accessed by a single word line and separate access transistors for read and write operations. A pair of write bit line transfer devices provide respectively access to the right and left sides of cross coupled pull-up, pull-down transistor pairs for a write operation, and a single read bit line transistor in series with the word line transistor, when selected, reads the content of the cell.

Abstract: A computing system is provided which includes a processor having a cache memory. The cache memory includes a plurality of independently configurable subdivisions, each subdivision including a memory array. A service element (SE) of the computing system is operable to cause a built-in-self-test (BIST) to be executed to test the cache memory, the BIST being operable to determine whether any of the subdivisions is defective. When it is determined that one of the subdivisions of the cache memory determined defective by the BIST is non-repairable, the SE logically deletes the defective subdivision from the system configuration, and the SE is operable to permit the processor to operate without the logically deleted subdivision. The SE is further operable to determine that the processor is defective when a number of the defective subdivisions exceeds a threshold.

Abstract: An apparatus and method for protecting a computer system from array reliability failures uses Array Built-In Self-Test logic along with code and hardware to delete cache lines or sets that are defective, identify corresponding fuse repair values, proactively call home if spare fuses are not available, schedule soft fuse repairs for the next system restart, schedule line deletes at the next restart, store delete and fuse repairs in a table (tagged with electronic serial id, timestamp of delete or ABIST fail event, address, and type of failure) and proactively call home if there were any missed deletes that were not logged. Fuse information can also be more permanently stored into hardware electronic fuses and/or EPROMs. During a restart, previous repairs are able to be applied to the machine so that ABIST will run successfully and previous deletes to be maintained with checking to allow some ABIST failures which are protected by the line deletes to pass.

Abstract: An SRAM cell that is accessed by a single word line and separate access transistors for read and write operations. A pair of write bit line transfer devices provide respectively access to the right and left sides of cross coupled pull-up, pull-down transistor pairs for a write operation, and a single read bit line transistor in series with the word line transistor, when selected, reads the content of the cell.

Abstract: The output register of an array and the Multiple Input Signature Register (MISR) logic is implemented with one set of L1/L2 master/slave latches and single additional slave latch. This new combined logic uses less critical area on a chip without a performance impact on the array access time or circuit testing.