Abstract: A pillar-type connection includes a first conductive layer that includes a hollow core. A second conductive layer is connected to the first conductive layer defining a conductive pillar that includes a top surface defining a recess aligned with the hollow core. A conductive via terminates at a top surface of the first conductive layer.

Abstract: A method of fabricating a pillar-type connection includes forming a second conductive layer on a first conductive layer to define a conductive pillar that includes a non-planar top surface defining a recess aligned with a hollow core of the first conductive layer.

Abstract: A method of manufacturing a bond pad structure may include depositing an aluminum-copper (Al—Cu) layer over a dielectric layer; and depositing an aluminum-chromium (Al—Cr) layer directly over the Al—Cu layer.

Abstract: A method of manufacturing a bond pad structure may include depositing an aluminum-copper (Al—Cu) layer over a dielectric layer; and depositing an aluminum-chromium (Al—Cr) layer directly over the Al—Cu layer.

Abstract: A gas-permeable filter system for a sterile container includes a filter element and a seal portion that sealingly surrounds a gas exchange opening provided in a sterile container wall section in such a manner that the seal portion rests against the sterile container wall section so that a sterile flow path is formed through the gas exchange opening and the filter element. A temperature-sensitive adjusting section releases at least the seal portion from the sterile container wall section when a specified temperature is reached or exceeded such that a non-sterile flow path is formed which allows fluid to be supplied or discharged via the gas exchange opening while bypassing the filter element. The sterile container includes a base and walls that define a receiving space. The sterile container also includes a cover for closing the receiving space. At least one filter system is preferably secured to the sterile container base.

Abstract: A method of fabricating a pillar-type connection includes forming a first conductive layer. A second conductive layer is formed on the first conductive layer to define a conductive pillar that includes a top surface defining a recess aligned with a hollow core of the first conductive layer. A conductive via that terminates at a top surface of the first conductive layer is formed.

Abstract: A method forming an interconnect structure includes depositing a first solder bump on a chip; depositing a second solder bump on a laminate, the second solder bump including a nickel copper colloid surrounded by a nickel or copper shell and suspended in a tin-based solder; aligning the chip with the laminate; performing a first reflow process to join the chip to the laminate; depositing an underfill material around the first solder bump and the second solder bump; and performing a second reflow process at a temperature that is lower than the first reflow process to convert the first solder bump and the second solder bump to an all intermetallic interconnect; wherein depositing the underfill material is performed before or after performing the second reflow process.

Abstract: An embodiment of the invention may include a semiconductor structure, and method of forming the semiconductor structure. The semiconductor structure may include a first set of pillars located on a first substrate. The semiconductor structure may include a second set of pillars located on a second substrate. The semiconductor structure may include a joining layer connecting the first pillar to the second pillar. The semiconductor structure may include an underfill layer located between the first and second substrate.

Abstract: Various embodiments include methods of forming interconnect structures, and the structures formed by such methods. In one embodiment, an interconnect structure can include: a photosensitive polyimide (PSPI) layer including a pedestal portion; a controlled collapse chip connection (C4) bump overlying the pedestal portion of the PSPI layer; a solder overlying the C4 bump and contacting a side of the C4 bump; and an underfill layer abutting the pedestal portion of the PSPI and the C4 bump, wherein the underfill layer and the solder form a first interface separated from the PSPI pedestal.

Abstract: The invention relates to a surgical protective device for a surgical sealing element of a surgical sealing system comprising a trocar sleeve, the surgical sealing element having an expandable insertion opening. Said protective device comprises a ring-shaped or substantially ring-shaped main body adapted to be arranged on the trocar sleeve, on a part thereof or on the sealing element and defines a through-opening with a plurality of protective elements arranged in the circumferential direction and extending parallel to or pointing towards a longitudinal axis of the protective device. Each of the protective elements is configured asymmetrically in relation to a plane containing a longitudinal axis defined by the main body.

Abstract: A method of manufacturing a bond pad structure may include depositing an aluminum-copper (Al—Cu) layer over a dielectric layer; and depositing an aluminum-chromium (Al—Cr) layer directly over the Al—Cu layer.

Abstract: The present disclosure relates to semiconductor structures and, more particularly, to photonics chips and methods of manufacture. A structure includes: a photonics chip having a grated optical coupler; an interposer attached to the photonics chip, the interposer having a grated optical coupler; an optical epoxy material provided between the grated optical coupler of the photonics chip and the grated optical coupler of the interposer; and epoxy underfill material provided at interstitial regions between the photonics chip and the interposer which lie outside of an area of the grated optical couplers of the photonics chip and the interposer.

Abstract: A method forming an interconnect structure includes depositing a first solder bump on a chip; depositing a second solder bump on a laminate, the second solder bump including a nickel copper colloid surrounded by a nickel or copper shell and suspended in a tin-based solder; aligning the chip with the laminate; performing a first reflow process to join the chip to the laminate; depositing an underfill material around the first solder bump and the second solder bump; and performing a second reflow process at a temperature that is lower than the first reflow process to convert the first solder bump and the second solder bump to an all intermetallic interconnect; wherein depositing the underfill material is performed before or after performing the second reflow process.

Abstract: A method of manufacturing a bond pad structure may include depositing an aluminum-copper (Al—Cu) layer over a dielectric layer; and depositing an aluminum-chromium (Al—Cr) layer directly over the Al—Cu layer.

Abstract: A method for integrating heaters in high bandwidth memory (HBM) applications and the related devices are provided. Embodiments include forming a silicon (Si) interposer over a substrate; forming HBM and an integrated circuit (IC) over the Si interposer; forming a heater on the Si interposer in a space between the HBM and Si interposer; and utilizing one or more temperature sensors in the HBM to monitor a temperature of the HBM.

Abstract: A method of fabricating a pillar-type connection includes forming a second conductive layer on a first conductive layer to define a conductive pillar that includes a non-planar top surface defining a recess aligned with a hollow core of the first conductive layer.

Abstract: The present disclosure relates to semiconductor structures and, more particularly, to photonics chips and methods of manufacture. A structure includes: a photonics chip having a grated optical coupler; an interposer attached to the photonics chip, the interposer having a grated optical coupler; an optical epoxy material provided between the grated optical coupler of the photonics chip and the grated optical coupler of the interposer; and epoxy underfill material provided at interstitial regions between the photonics chip and the interposer which lie outside of an area of the grated optical couplers of the photonics chip and the interposer.

Abstract: A method of fabricating a pillar-type connection includes forming a first conductive layer. A second conductive layer is formed on the first conductive layer to define a conductive pillar that includes a top surface defining a recess aligned with a hollow core of the first conductive layer. A conductive via that terminates at a top surface of the first conductive layer is formed.

Abstract: A method forming an interconnect structure includes depositing a first solder bump on a chip; depositing a second solder bump on a laminate, the second solder bump including a nickel copper colloid surrounded by a nickel or copper shell and suspended in a tin-based solder; aligning the chip with the laminate; performing a first reflow process to join the chip to the laminate; depositing an underfill material around the first solder bump and the second solder bump; and performing a second reflow process at a temperature that is lower than the first reflow process to convert the first solder bump and the second solder bump to an all intermetallic interconnect; wherein depositing the underfill material is performed before or after performing the second reflow process.

Abstract: A method of fabricating a pillar-type connection includes forming, on a bond pad, a first conductive layer including a hollow core. A second conductive layer is formed on a first conductive layer to define a conductive pillar that includes a non-planar top surface defining a recess aligned with the hollow core.