Abstract: A semiconductor memory device includes a first substrate including a first region and a second region, a stacked structure only on the first region of the first substrate among the first region and the second region of the first substrate, the stacked structure including word lines, an interlayer insulating film covering the stacked structure, a dummy conductive structure inside the interlayer insulating film, the dummy conductive structure extending through the stacked structure to contact the first substrate, and a plate contact plug inside the interlayer insulating film, the plate contact plug being connected to the second region of the first substrate, and a height of an upper surface of the dummy conductive structure being greater than a height of an upper surface of the plate contact plug relative to an upper surface of the first substrate.

Abstract: A liquefied gas storage tank includes a corner block disposed on a corner portion, wherein the corner block includes a lower block, an upper block and an upper connecting block, the upper block includes a first inner fixing unit and a second inner fixing unit respectively provided inside a first surface and a second surface, bonded and connected to a secondary barrier, and each having a structure in which a primary inner plywood, a primary corner insulating material, and a primary outer plywood are stacked, and an inner bent portion installed at a corner spatial portion between the first inner fixing unit and the second inner fixing unit, and both side surfaces of the inner bent portion that are perpendicular to the secondary barrier each have a height reduced from a total height of each of the first and second inner fixing units.

Abstract: A computing device includes at least one memory, and at least one processor configured to generate, based on first analysis on a pathological slide image, first biomarker expression information, generate, based on a user input for updating at least some of results of the first analysis, second biomarker expression information about the pathological slide image, and control a display device to output a report including medical information about at least some regions included in the pathological slide image, based on at least one of the first biomarker expression information or the second biomarker expression information.

Abstract: According to one embodiment, a method by which a device provides a service so as to enable cognitive function rehabilitation by using a virtual object model comprises the steps of: generating a virtual object model in a virtual space matched to correspond to a real space where a subject is located; generating a plurality of first preliminary stimuli for identifying egocentric neglect in the visual range of the subject on the basis of the virtual object model; obtaining and collecting first reaction information about whether the subject has recognized the first preliminary stimuli; determining an egocentric cognition range in which the subject can egocentrically recognize visual stimuli on the basis of the first reaction information; sequentially generating a plurality of second preliminary stimuli for identifying allocentric neglect in the egocentric cognition range on the basis of the virtual object model; obtaining and collecting second reaction information about whether the subject has recognized the secon

Abstract: The liquefied gas storage tank includes a primary barrier, a primary insulation wall, a secondary barrier, and a secondary insulation wall. In a state where unit elements are arranged adjacent to each other, each of the unit elements being formed by stacking the secondary insulation wall, the secondary barrier, and a fixed insulation wall which is a part of the primary insulation wall, the primary insulation wall may comprise: a connection insulation wall provided in the space between the adjacent fixed insulation walls; first slits formed between the fixed insulation walls and the connection insulation wall when the connection insulation wall is inserted and installed between the adjacent fixed insulation walls; a plurality of second slits formed in a lengthwise direction and a widthwise direction of the fixed insulation walls; and a first insulating filler material for filling the first slits.

Abstract: A semiconductor memory device includes a first substrate including a first region and a second region, a stacked structure only on the first region of the first substrate among the first region and the second region of the first substrate, the stacked structure including word lines, an interlayer insulating film covering the stacked structure, a dummy conductive structure inside the interlayer insulating film, the dummy conductive structure extending through the stacked structure to contact the first substrate, and a plate contact plug inside the interlayer insulating film, the plate contact plug being connected to the second region of the first substrate, and a height of an upper surface of the dummy conductive structure being greater than a height of an upper surface of the plate contact plug relative to an upper surface of the first substrate.

Abstract: Provided is a method of evaluating electrode quality capable of simply and quickly filtering out defective electrodes by measuring a color coordinate value of electrodes before roll-pressing, which specifically includes: providing an electrode which includes a current collector and an active material layer formed on the current collector and has not been roll-pressed; measuring a color coordinate value of the active material layer using an optical instrument; and evaluating the electrode as a good product when the measured color coordinate value satisfies a predetermined electrode quality evaluation criterion and as defective when the measured color coordinate value does not satisfy the predetermined electrode quality evaluation criterion.

Abstract: A semiconductor memory device includes a first substrate including a first region and a second region, a stacked structure only on the first region of the first substrate among the first region and the second region of the first substrate, the stacked structure including word lines, an interlayer insulating film covering the stacked structure, a dummy conductive structure inside the interlayer insulating film, the dummy conductive structure extending through the stacked structure to contact the first substrate, and a plate contact plug inside the interlayer insulating film, the plate contact plug being connected to the second region of the first substrate, and a height of an upper surface of the dummy conductive structure being greater than a height of an upper surface of the plate contact plug relative to an upper surface of the first substrate.

Abstract: The present invention relates to an apparatus for evaluating drying quality of an electrode, and the apparatus includes: an oven configured to provide a space in which an electrode is dried; a measuring unit configured to be positioned at an outlet of the oven and measure a color coordinate value of an electrode active material layer with respect to the dried electrode; and an determination unit configured to determine whether the electrode is dry from the color coordinate value, wherein the determination unit sets a reference value, and determines that a dry state of the electrode is defective if the measured color coordinate value is less than the reference value, and a difference between the measured color coordinate value and the reference value is more than a preset value.

Abstract: A light-emitting element and a display device including the same are provided. The light-emitting element comprises a first semiconductor layer doped with an n-type dopant, a second semiconductor layer disposed below the first semiconductor layer and doped with a p-type dopant, a light-emitting layer disposed between the first semiconductor layer and the second semiconductor layer, a first intermediate layer disposed on the first semiconductor layer, and including a metal, and an electrode layer disposed on the first intermediate layer. Light from the light-emitting layer transmits through the first semiconductor layer, the first intermediate layer, and the electrode layer at a transmittance equal to or greater than about 70%.

Abstract: A semiconductor memory device includes a first substrate including a first region and a second region, a stacked structure only on the first region of the first substrate among the first region and the second region of the first substrate, the stacked structure including word lines, an interlayer insulating film covering the stacked structure, a dummy conductive structure inside the interlayer insulating film, the dummy conductive structure extending through the stacked structure to contact the first substrate, and a plate contact plug inside the interlayer insulating film, the plate contact plug being connected to the second region of the first substrate, and a height of an upper surface of the dummy conductive structure being greater than a height of an upper surface of the plate contact plug relative to an upper surface of the first substrate.

Abstract: Provided is a vertical non-volatile memory device having a metal source line. The vertical non-volatile memory device includes cell string units that are formed on first portions of a semiconductor substrate and are vertically arranged with respect to a surface of the semiconductor substrate, impurity regions formed on second portions of the semiconductor substrate between the cell string units, conductive lines formed on the impurity regions, and spacers that are formed on the sidewalls of the cell string units and insulate the conductive lines from the cells string units.

Abstract: Disclosed are conjugated polymer nanoparticles and a method of producing the same. The conjugated polymer nanoparticles include a conjugated polymer, fatty acid and an amphiphile polymer. The conjugated polymer nanoparticles can be doped even under a neutral environment, thus exhibiting high electrical conductivity and exerting absorbance properties in the near-infrared band even under a neutral environment such as in vivo.

Abstract: Provided is a vertical non-volatile memory device having a metal source line. The vertical non-volatile memory device includes cell string units that are formed on first portions of a semiconductor substrate and are vertically arranged with respect to a surface of the semiconductor substrate, impurity regions formed on second portions of the semiconductor substrate between the cell string units, conductive lines formed on the impurity regions, and spacers that are formed on the sidewalls of the cell string units and insulate the conductive lines from the cells string units.

Abstract: Provided is a vertical non-volatile memory device having a metal source line. The vertical non-volatile memory device includes cell string units that are formed on first portions of a semiconductor substrate and are vertically arranged with respect to a surface of the semiconductor substrate, impurity regions formed on second portions of the semiconductor substrate between the cell string units, conductive lines formed on the impurity regions, and spacers that are formed on the sidewalls of the cell string units and insulate the conductive lines from the cells string units.

Abstract: A vertical non-volatile memory device includes a substrate, and a first stack of word lines and a second stack of word lines extending in a first direction on the substrate and separated from each other in a second direction perpendicular to the first direction. The device further includes first array lines extending in the second direction on the first and the second stack, and connected to word lines of the first and the second stack through at least two of first via contacts in a same level. The device further include first word select lines being in a same level and extending in the first direction, and connected to each of the first array lines through at least one of second via contacts. Ends of each of the first and the second stack have a form of stairs on the substrate.

Abstract: Provided is a vertical non-volatile memory device having a metal source line. The vertical non-volatile memory device includes cell string units that are formed on first portions of a semiconductor substrate and are vertically arranged with respect to a surface of the semiconductor substrate, impurity regions formed on second portions of the semiconductor substrate between the cell string units, conductive lines formed on the impurity regions, and spacers that are formed on the sidewalls of the cell string units and insulate the conductive lines from the cells string units.

Abstract: Disclosed are conjugated polymer nanoparticles and a method of producing the same. The conjugated polymer nanoparticles include a conjugated polymer, fatty acid and an amphiphile polymer. The conjugated polymer nanoparticles can be doped even under a neutral environment, thus exhibiting high electrical conductivity and exerting absorbance properties in the near-infrared band even under a neutral environment such as in vivo.

Abstract: Provided is a vertical non-volatile memory device having a metal source line. The vertical non-volatile memory device includes cell string units that are formed on first portions of a semiconductor substrate and are vertically arranged with respect to a surface of the semiconductor substrate, impurity regions formed on second portions of the semiconductor substrate between the cell string units, conductive lines formed on the impurity regions, and spacers that are formed on the sidewalls of the cell string units and insulate the conductive lines from the cells string units.

Abstract: A vertical non-volatile memory device includes a substrate, and a first stack of word lines and a second stack of word lines extending in a first direction on the substrate and separated from each other in a second direction perpendicular to the first direction. The device further includes first array lines extending in the second direction on the first and the second stack, and connected to word lines of the first and the second stack through at least two of first via contacts in a same level. The device further include first word select lines being in a same level and extending in the first direction, and connected to each of the first array lines through at least one of second via contacts. Ends of each of the first and the second stack have a form of stairs on the substrate.