Abstract: A package structure including a redistribution circuit structure, a wiring substrate, first conductive terminals, an insulating encapsulation, and a semiconductor device is provided. The redistribution circuit structure includes stacked dielectric layers, redistribution wirings and first conductive pads. The first conductive pads are disposed on a surface of an outermost dielectric layer among the stacked dielectric layers, the first conductive pads are electrically connected to outermost redistribution pads among the redistribution wirings by via openings of the outermost dielectric layer, and a first lateral dimension of the via openings is greater than a half of a second lateral dimension of the outermost redistribution pads. The wiring substrate includes second conductive pads. The first conductive terminals are disposed between the first conductive pads and the second conductive pads. The insulating encapsulation is disposed on the surface of the redistribution circuit structure.

Abstract: Embodiments described herein relate to plasma processes. A plasma process includes generating a plasma containing negatively charged oxygen ions. A substrate is exposed to the plasma. The substrate is disposed on a pedestal while being exposed to the plasma. While exposing the substrate to the plasma, a negative direct current (DC) bias voltage is applied to the pedestal to repel the negatively charged oxygen ions from the substrate.

Abstract: A combined bio-artificial liver support system, includes branch tubes that are connected in sequence: a blood input branch tube, an upstream tail end, a first plasma separation branch tube comprising at least a first plasma separator, a non-biological purification branch tube comprising at least a plasma perfusion device and a bilirubin adsorber, a biological purification branch tube comprising at least a hepatocyte culture cartridge assembly, and a plasma return branch tube, a downstream tail end of which is set as a blood output end.

Abstract: The invention provides an underground container logistics loading and unloading system based on a deep underground passage. The underground container logistics loading and unloading system comprises an automatic container wharf, a logistics park and the deep underground passage. The automatic container wharf is connected with the logistics park through the deep underground passage, and the deep underground passage internally comprises an area where shuttle vehicles run; and the deep underground passage comprises a main body layout area and accessory equipment.

Abstract: In a method of manufacturing a semiconductor device, a fin structure having a channel region protruding from an isolation insulating layer disposed over a semiconductor substrate is formed, a cleaning operation is performed, and an epitaxial semiconductor layer is formed over the channel region. The cleaning operation and the forming the epitaxial semiconductor layer are performed in a same chamber without breaking vacuum.

Abstract: A nucleic acid extraction and fluorescent PCR detection system, comprising: an extraction strip, an extraction strip loading device for loading the extraction strip, a sample holder loading device for loading and unloading samples, an extraction strip transfer gripper for driving the extraction strip to move to a preset position, a nucleic acid extraction device for purifying the samples to obtain nucleic acids, a PCR detection device for performing fluorescent PCR detection on the nucleic acids, and a control device, wherein the extraction strip loading device, the sample holder loading device, the extraction strip transfer gripper, the nucleic acid extraction device and the PCR detection device are all connected to the control device. The problems of relatively poor flexibility and relatively low detection efficiency of a nucleic acid extraction and detection system can be ameliorated, so that a sample detection process is more flexible and convenient.

Abstract: A shutter controller configured to control an operating rod of a shutter includes a controller housing, a clamping mechanism, and a driving mechanism. The controller housing includes a first housing and a second housing connected to each other, and the second housing is provided with a receiving cavity. The clamping mechanism is configured to clamp the operating rod and rotatably provided in the receiving cavity. The driving mechanism is provided in the first housing and is in transmission connection with the clamping mechanism, and the driving mechanism is configured to drive the clamping mechanism to rotate, thereby driving the operating rod to rotate.

Abstract: A method for protecting a surface of a substrate during processing includes a) providing a solution forming a co-polymer having a ceiling temperature; b) dispensing the solution onto a surface of the substrate to form a sacrificial protective layer, wherein the co-polymer is kinetically trapped to allow storage at a temperature above the ceiling temperature; c) exposing the substrate to ambient conditions for a predetermined period; and d) de-polymerizing the sacrificial protective layer by using stimuli selected from a group consisting of ultraviolet (UV) light and heat.

Abstract: A dopant boost in the source/drain regions of a semiconductor device, such as a transistor can be provided. A semiconductor device can include a doped epitaxy of a first material having a plurality of boosting layers embedded within. The boosting layers can be of a second material different from the first material. Another device can include a source/drain feature of a transistor. The source/drain feature includes a doped source/drain material and one or more embedded distinct boosting layers. A method includes growing a boosting layer in a recess of a substrate, where the boosting layer is substantially free of dopant. The method also includes growing a layer of doped epitaxy in the recess on the boosting layer.

Abstract: The present disclosure provides an acryloyloxy-terminated polydimethylsiloxane (AC-PDMS)-based thin-film composite (TFC) membrane, and a preparation method and use thereof. In the preparation method, a simple ultraviolet (UV)-induced monomer polymerization strategy based on high UV reactivity among acryloyloxy groups is adopted to prepare the AC-PDMS-based TFC membrane. The high UV reactivity among AC-PDMS monomers can induce the rapid curing of a casting solution to enable the formation of an ultra-thin selective layer and the inhibition of pore penetration for a substrate. By optimizing a UV wavelength, an irradiation time, and a polymer concentration, the prepared AC-PDMS-based TFC membrane has a CO2 penetration rate of 9,635 GPU and a CO2/N2 selectivity of 11.5. The UV-induced monomer polymerization strategy based on material properties provides a novel efficient strategy for preparing an ultra-thin PDMS-based membrane, which can be used for molecular separation.

Abstract: A three-dimensional (3D) memory structure includes memory cells and a plurality of oxide layers and a plurality of word line layers. The plurality of oxide layers and the plurality of word line layers are alternately stacked in a first direction. A plurality of double channel holes extend through the plurality of oxide layers and the plurality of word line layers in the first direction. The plurality of double channel holes have a peanut-shaped cross-section in a second direction that is transverse to the first direction.

Abstract: The present disclosure relates to a film formed with a metal precursor and an organic precursor, as well as methods for forming and employing such films. The film can be employed as a photopatternable film or a radiation-sensitive film. In particular embodiments, the film includes alternating layers of metal-containing layers and organic layers. In other embodiments, the film includes a matrix of deposited metal and organic constituents.

Abstract: A method includes providing a substrate having a gate structure over a first side of the substrate, forming a recess adjacent to the gate structure, and forming in the recess a first semiconductor layer having a dopant, the first semiconductor layer being non-conformal, the first semiconductor layer lining the recess and extending from a bottom of the recess to a top of the recess. The method further includes forming a second semiconductor layer having the dopant in the recess and over the first semiconductor layer, a second concentration of the dopant in the second semiconductor layer being higher than a first concentration of the dopant in the first semiconductor layer.

Abstract: A method for atomic layer etching copper or copper alloy over a substrate in a plasma processing chamber comprising a plurality of cycles is provided. Each cycle of the plurality of cycles comprises a copper modification phase and an activation phase. The copper modification phase comprises flowing a modification gas into the plasma processing chamber, transforming the modification gas into a modification plasma, and exposing the copper or copper alloy to the modification plasma, wherein at least a part of the copper or copper alloy is modified. The activation phase comprises flowing an activation gas into the plasma processing chamber, wherein the activation gas, comprises a hydrogen containing gas, transforming the activation gas into an activation plasma, and exposing the modified copper or copper alloy to the activation plasma, wherein at least a volatile copper or copper alloy complex is formed.

Abstract: The present disclosure relates to a stimulus responsive polymer (SRP) that includes a homopolymer. Methods, films, and formulations employing an SRP are also described herein.

Abstract: Methods for making thin-films on semiconductor substrates, which may be patterned using EUV, include: depositing the organometallic polymer-like material onto the surface of the semiconductor substrate, exposing the surface to EUV to form a pattern, and developing the pattern for later transfer to underlying layers. The depositing operations may be performed by chemical vapor deposition (CVD), atomic layer deposition (ALD), and ALD with a CVD component, such as a discontinuous, ALD-like process in which metal precursors and counter-reactants are separated in either time or space.

Abstract: A process for enriching phosphorus and recovering vivianite by a biofilm method includes the following steps: 1) an aerobic phosphorus absorption stage; 2) an anaerobic phosphorus release stage; 3) a cyclic enrichment stage; 4) a seed crystal forming stage; and 5) a crystal forming stage.

Abstract: The embodiments of the disclosure provide a method for determining physical characteristics of objects, a host, and a computer readable storage medium. The method includes: detecting a first physical object in an environment; obtaining a first motion behavior of a reference object, wherein the first motion behavior corresponds to an interact event of the reference object interacting with the first physical object; and determining a first physical characteristic of the first physical object based on the first motion behavior.

Abstract: Embodiments of the present disclosure is directed to a remote care method based on person category attributes, a remote care device and computer readable storage medium. The remote care method includes: obtaining a plurality of environmental images including a caretaker based on a smart camera, and determining whether the caretaker is in a dynamic state according to the plurality of environmental images; detecting a dynamic speed of the caretaker when the caretaker is in the dynamic state; determining a category attribute of the caretaker according to the dynamic speed, and collecting a personnel image of the caretaker according to a collection period corresponding to the category attribute to perform a remote care.

Abstract: A semiconductor device and method includes: forming a gate stack over a substrate; growing a source/drain region adjacent the gate stack, the source/drain region being n-type doped Si; growing a semiconductor cap layer over the source/drain region, the semiconductor cap layer having Ge impurities, the source/drain region free of the Ge impurities; depositing a metal layer over the semiconductor cap layer; annealing the metal layer and the semiconductor cap layer to form a silicide layer over the source/drain region, the silicide layer having the Ge impurities; and forming a metal contact electrically coupled to the silicide layer.