Abstract: A high-energy radiation-sensitive pattern-forming resist material consisting of polysilsesquioxane having no hydroxyl group in its molecule. The pattern-forming material of this invention has an improved sensitivity to high-energy radiation exposure, a high resistance to dry etching, a high resolution capability, and an improved thermal stability.

Abstract: A dry-developing positive resist composition consisting of (a) a polymeric material containing, in the molecular structure, unsaturated hydrocarbon bonds inclusive of vinyl, allyl, cinnamoyl, or acryl double bonds or epoxy groups or halogen atoms and (b) 1% to 70% by weight, based on the weight of the composition, of a silicon compound. A positive resist pattern is formed on a substrate by a process comprising coating the substrate with said resist composition, exposing the resist layer to radiation, and developing a resist pattern on the substrate by treatment with gas plasma.

Abstract: A dry-developing negative resist composition consisting of (a) a polymer of a monomer of the following formula I or II or a copolymer of a monomer of the following formula I with a monomer of the following formula II, ##STR1## in which R represents alkyl of 1 to 6 carbon atoms, benzyl, phenyl, or cyclohexyl and (b) 1% to 70% by weight, based on the weight of the composition, of a silicone compound. A negative resist pattern can be formed on a substrate by a process comprising coating the substrate with the resist composition, exposing the resist layer to an ionizing radiation, subjecting the resist layer to a relief treatment, and developing a resist pattern on the substrate by treatment with gas plasma.

Abstract: A cross-linkable positive-working ionizing radiation-resist or ultraviolet ray-resist polymer composition including: in polymerized form,(a) units derived from a methacrylic acid ester of the formula:CH.sub.2 .dbd.C(CH.sub.3).COORwhere R is an alkyl or haloalkyl group having from 1 to 6 carbon atoms, benzyl or cyclohexyl,(b) units derived from a monoolefinically unsaturated carboxylic acid having from 3 to 12 carbon atoms and from 1 to 3 carboxyl groups, and(c) units derived from methacrylic acid chloride.The amount of the units (c) in the polymer composition is such that the number of moles of the units (b), multiplied by the number of the carboxyl group or groups in each of the units (b), ranges from about 1 to about 20% based on the total number of moles of the units (a), (b) and (c); the amount of the units (c) ranges from about 0.05 to about 3.

Abstract: PCT No. PCT/JP78/00022 Sec. 371 Date July 7, 1979 Sec. 102(e) Date July 2, 1979 PCT Filed Nov. 6, 1978 PCT Pub. No. WO79/00284 PCT Pub. Date May 31, 1979A cross-linkable positive-working ionizing radiation-resist or ultraviolet ray- resist polymer composition including: in polymerized form,(a) units derived from a methacrylic acid ester of the formula:CH.sub.2 .dbd.C(CH.sub.3).COORwhere R is an alkyl or haloalkyl group having from 1 to 6 carbon atoms, benzyl or cyclohexyl,(b) units derived from a monoolefinically unsaturated carboxylic acid from 3 to 12 carbon atoms and having from 1 to 3 carboxyl groups, and(c) units derived from methacrylic acid chloride.The amount of the units (c) in the polymer composition is such that the number of moles of the units (b), multiplied by the number of the carboxyl group or groups in each of the units (b) ranges from about 1 to about 20% based on the total number of moles of the units (a), (b) and (c); the amount of the units (c) ranges from about 0.05 to about 3.

Abstract: PCT No. PCT/JP78/00021 Sec. 371 Date July 2, 1979 Sec. 102(e) Date July 7, 1979 PCT Filed Nov. 6, 1978 PCT Pub. No. WO79/00283 PCT Pub. Date May 31, 1979A cross-linkable positive-working ionizing radiation-resist or ultraviolet ray-resist polymer composition comprising, in polymerized form,(a) from about 70 to about 99% by mole of units derived from a methacrylic acid ester of the formula:CH.sub.2 .dbd.C(CH.sub.3). COORwhere R is an alkyl or haloalkyl group having from 1 to 6 carbon atoms, a benzyl group or a cyclohexyl group,(b) from about 1 to about 20% by mole of units derived from methacrylamide, and(c) from about 0.05 to about 20% by mole of units derived from methacrylic acid chloride;each amount of the units (a), (b) and (c) being based on the total moles of the units (a), (b) and (c).

Abstract: A negative type resist is provided for deep ultraviolet light lithography. This resist comprises a polymer of a diallyl ester of a dicarboxylic acid having a degree of dispersion of 3 or less, which is given by the ratio of a weight-average molecular weight Mw to a number-average molecular weight Mn. This deep UV resist can produce a fine detail resist pattern having a high resolution, and it has a high sensitivity to irradiating the coated film of the polymer on a substrate with deep UV light followed by development.