Abstract: Provided is a power amplification circuit that includes: an amplifier that amplifies an input signal and outputs an amplified signal; a first bias circuit that supplies a first bias current or voltage to the amplifier; a second bias circuit that supplies a second bias current or voltage to the amplifier; a first control circuit that controls the first bias current or voltage; and a second control circuit that controls the second bias current or voltage. The current supplying capacity of the first bias circuit is different from the current supplying capacity of the second bias circuit.

Abstract: A transmission unit includes a first transistor that amplifies power of a first signal and outputs a second signal, a power supply circuit that supplies to the first transistor a power supply voltage that changes in accordance with an amplitude level of the first signal, and an attenuator that attenuates the first signal in such a manner that an amount of attenuation of the first signal increases with a decrease in the power supply voltage when the power supply voltage is less than a first level.

Abstract: A power amplifier circuit includes a first transistor amplifying a first signal; a second transistor amplifying a second signal; a bias circuit supplying a bias current or voltage to a base or gate of the second transistor; and an attenuator attenuating the first or second signal in accordance with a control voltage supplied from the bias circuit. The attenuator includes a first diode to which the control voltage is supplied, a third transistor including a collector connected to a supply path of the first or second signal, an emitter connected to a ground, and a base to which the control voltage is supplied from the first diode, and a capacitor connected in parallel with the first diode. The control voltage decreases as a second signal power level increases. The third transistor allows part of the first or second signal to pass to the emitter in accordance with the control voltage.

Abstract: A power supply circuit board includes a substrate, a first line that is provided on a first main surface of the substrate and that has a land, a second line that is provided on the first main surface of the substrate and that has a land, an inductor that is connected to the land of the first line and the land of the second line and that is made of a ferrite material, and an open stub that is connected to at least one of the first line and the second line.

Abstract: A power amplifier circuit amplifies a radio-frequency signal in a transmit frequency band. The power amplifier circuit includes an amplifier, a bias circuit, and an impedance circuit. The amplifier amplifies power of a radio-frequency signal and outputs an amplified signal. The impedance circuit is connected between a signal input terminal of the amplifier and a bias-current output terminal of the bias circuit and has frequency characteristics in which attenuation is obtained in the transmit frequency band. The impedance circuit includes first and second impedance circuits. The first impedance circuit is connected to the signal input terminal. The second impedance circuit is connected between the first impedance circuit and the bias-current output terminal.

Abstract: A smartphone case that enables millimeter-wave band communication to be robust in terms of connection stability is provided. The smartphone case is to be removably attached to a smartphone and includes one or more millimeter-wave band communication antennas associated with a communication circuit for carrying out millimeter-wave band communication. This configuration offers a high degree of flexibility in the layout of the one or more millimeter-wave band communication antennas, with the performance of a 5G communication system being fully exploited.

Abstract: Provided is a power amplification circuit that includes: an amplifier that amplifies an input signal and outputs an amplified signal; a first bias circuit that supplies a first bias current or voltage to the amplifier; a second bias circuit that supplies a second bias current or voltage to the amplifier; a first control circuit that controls the first bias current or voltage; and a second control circuit that controls the second bias current or voltage. The current supplying capacity of the first bias circuit is different from the current supplying capacity of the second bias circuit.

Abstract: An amplifier circuit including a semiconductor element is formed on a substrate. A protection circuit is formed including a plurality of protection diodes that are formed on the substrate and that are connected in series with each other, the protection circuit being connected to an output terminal of the amplifier circuit. A pad conductive layer is formed that at least partially includes a pad for connecting to a circuit outside the substrate. An insulating protective film covers the pad conductive layer. The insulating protective film includes an opening that exposes a partial area of a surface of the pad conductive layer, and that covers another area. A first bump is formed on the pad conductive layer on a bottom surface of the opening, and a second bump at least partially overlaps the protection circuit in plan view and is connected to a ground (GND) potential connected to the amplifier circuit.

Abstract: A power amplifier module includes a power amplifier circuit and a control IC. The power amplifier circuit includes a bipolar transistor that amplifies power of an RF signal and outputs an amplified signal. The control IC includes an FET, which serves as a bias circuit that supplies a bias signal to the bipolar transistor. The FET is operable at a threshold voltage lower than that of the bipolar transistor, thereby making it possible to decrease the operating voltage of the power amplifier module.

Abstract: Provided is a power amplification module that includes: a first transistor, a first signal being inputted to a base thereof; a second transistor, the first signal being inputted to a base thereof and a collector thereof being connected to a collector of the first transistor; a first resistor, a first bias current being supplied to one end thereof and another end thereof being connected to the base of the first transistor; a second resistor, one end thereof being connected to the one end of the first resistor and another end thereof being connected to the base of the second transistor; and a third resistor, a second bias current being supplied to one end thereof and another end thereof being connected to the base of the second transistor.

Abstract: A power amplifier module includes a power amplifier circuit and a control IC. The power amplifier circuit includes a bipolar transistor that amplifies power of an RF signal and outputs an amplified signal. The control IC includes an FET, which serves as a bias circuit that supplies a bias signal to the bipolar transistor. The FET is operable at a threshold voltage lower than that of the bipolar transistor, thereby making it possible to decrease the operating voltage of the power amplifier module.

Abstract: An amplifier circuit including a semiconductor element is formed on a substrate. A protection circuit formed on the substrate includes a plurality of protection diodes that are connected in series with each other, and the protection circuit is connected to an output terminal of the amplifier circuit. A pad conductive layer at least partially includes a pad for connecting to a circuit outside the substrate. The pad conductive layer and the protection circuit at least partially overlap each other in plan view.

Abstract: A smartphone case that enables millimeter-wave band communication to be robust in terms of connection stability is provided. The smartphone case is to be removably attached to a smartphone and includes one or more millimeter-wave band communication antennas associated with a communication circuit for carrying out millimeter-wave band communication. This configuration offers a high degree of flexibility in the layout of the one or more millimeter-wave band communication antennas, with the performance of a 5G communication system being fully exploited.

Abstract: A communication device includes: a first body including a first display portion; a second body including a second display portion; a communication circuit that carries out millimeter-wave band communication; and one or more millimeter-wave band communication antennas provided in at least one of the first body and the second body.

Abstract: A multi-antenna module includes, on or in the dielectric substrate, a first radiation element, a second radiation element that operates at a frequency band lower than that of the first radiation element, and a ground plane. A first feed line and a second feed line are provided on or in the dielectric substrate. A first switch element switches between a first state in which a signal is supplied to the second radiation element and a second state including at least one of a state in which the second radiation element is connected to the ground plane with terminal impedance interposed therebetween, a state in which the second radiation element is in a floating state with respect to the second feed line and the ground plane, and a state in which the second radiation element is short-circuited to the ground plane.

Abstract: A reading apparatus includes: a reading section configured to generate a first image being a read image of a first face of a document sheet and a second image being a read image of a second face of the document sheet; if there is a brightness change area including a bright part having a brightness change in a convex state and a dark part being in contact with the bright part and having a brightness change in a concave state at an identical position on both of the images, an identification section configured to identify the brightness change area as a wrinkle area; and an output section configured to output the first image having been subjected to image processing of the identified wrinkle area.

Abstract: A multi-antenna module includes, on or in the dielectric substrate, a first radiation element, a second radiation element that operates at a frequency band lower than that of the first radiation element, and a ground plane. A first feed line and a second feed line are provided on or in the dielectric substrate. A first switch element switches between a first state in which a signal is supplied to the second radiation element and a second state including at least one of a state in which the second radiation element is connected to the ground plane with terminal impedance interposed therebetween, a state in which the second radiation element is in a floating state with respect to the second feed line and the ground plane, and a state in which the second radiation element is short-circuited to the ground plane.

Abstract: A semiconductor chip includes an active element on a first surface of a substrate. A heat-conductive film having a higher thermal conductivity than the substrate is disposed at a position different from a position of the active element. An insulating film covering the active element and heat-conductive film is disposed on the first surface. A bump electrically connected to the heat-conductive film is disposed on the insulating film. A via-hole extends from a second surface opposite to the first surface to the heat-conductive film. A heat-conductive member having a higher thermal conductivity than the substrate is continuously disposed from a region of the second surface overlapping the active element in plan view to an inner surface of the via-hole. The bump is connected to a land of a printed circuit board facing the first surface. The semiconductor chip is sealed with a resin.

Abstract: A management system for objects under monitoring that is capable of managing the presence of moving objects under monitoring. The management system includes a plurality of beacon terminals, one or more management terminals, and a management server. The beacon terminals are respectively held by the moving objects under monitoring, and each have a unique identifier and broadcast a beacon signal. The one or more management terminals are respectively held by one or more moving bodies moving in one or more areas, receive beacon signals to acquire beacon identifiers and beacon presence information, and acquire location information via a positioning system. The management terminals output beacon information spontaneously or upon request. The management server determines the state of presence of the objects under monitoring in the one or more areas, based on the beacon information acquired from the one or more management terminals.

Abstract: A power amplifier module includes a power amplifier circuit and a control IC. The power amplifier circuit includes a bipolar transistor that amplifies power of an RF signal and outputs an amplified signal. The control IC includes an FET, which serves as a bias circuit that supplies a bias signal to the bipolar transistor. The FET is operable at a threshold voltage lower than that of the bipolar transistor, thereby making it possible to decrease the operating voltage of the power amplifier module.