Patents by Inventor Yeong-Taek Lee

Yeong-Taek Lee has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Resistive memory devices and methods of operating the same
    Patent number: 9129675
    Abstract: Resistive memory driving methods are provided. The methods may include applying an operating voltage set according to a mode of operation to a selected word line among the plurality of word lines and a selected bit line among the plurality of bit lines within a line delay period.
    Type: Grant
    Filed: September 16, 2013
    Date of Patent: September 8, 2015
    Assignee: Samsung Electronics Co., Ltd.
    Inventors: Ingyu Baek, Yeong-Taek Lee, KyungMin Kim
  • Multi-bit flash memory device and memory cell array
    Patent number: 9111616
    Abstract: A flash memory device includes a plurality of memory blocks. A selected memory block among the plurality of memory blocks includes 2n pages of data. The selected memory block includes different types of memory cells capable of storing different numbers of bits.
    Type: Grant
    Filed: March 6, 2014
    Date of Patent: August 18, 2015
    Assignee: Samsung Electronics Co., Ltd.
    Inventors: Ki-Tae Park, Ki-Nam Kim, Yeong-Taek Lee
  • Nonvolatile memory device using resistance material and method of driving the nonvolatile memory device
    Patent number: 9082478
    Abstract: Provided is a nonvolatile memory device using a resistance material and a method of driving the nonvolatile memory device. The nonvolatile memory device comprises a resistive memory cell which stores multiple bits; a sensing node; a clamping unit coupled between the resistive memory cell and the sensing node and provides a clamping bias to the resistive memory cell; a compensation unit which provides a compensation current to the sensing node; a sense amplifier coupled to the sensing node and senses a change in a level of the sensing node; and an encoder which codes an output value of the sense amplifier in response to a first clock signal. The clamping bias varies over time. The compensation current is constant during a read period.
    Type: Grant
    Filed: July 12, 2013
    Date of Patent: July 14, 2015
    Assignee: Samsung Electronics Co., Ltd.
    Inventors: Sung-Yeon Lee, Yeong-Taek Lee
  • Nonvolatile memory devices using variable resistive elements and related driving methods thereof
    Patent number: 9001560
    Abstract: Driving methods of a nonvolatile memory device are provided. The driving method includes providing a start pulse adjusted based on a previous write operation to a resistive memory cell to write data, verifying whether the data has accurately been written using the start pulse, and executing a write operation on the resistive memory cell by an incremental one-way write method or a decremental one-way write method according to the verify result. Related nonvolatile memory devices are also provided.
    Type: Grant
    Filed: December 9, 2013
    Date of Patent: April 7, 2015
    Assignee: Samsung Electronics Co., Ltd.
    Inventors: Sung-Yeon Lee, Yeong-Taek Lee, Bo-Geun Kim
  • Resistive memory device comprising selectively disabled write driver
    Patent number: 8902633
    Abstract: A nonvolatile memory device comprises a resistive memory cell, a write driver configured to write data to the resistive memory cell during a write period comprising a plurality of loops, and a sense amplifier configured to verify whether the data is correctly written to the resistive memory cell in each of the loops. Where the sense amplifier verifies that the data is correctly written in a k-th loop among the loops, the write driver is disabled from a (k+1)-th loop to an end of the write period.
    Type: Grant
    Filed: March 13, 2013
    Date of Patent: December 2, 2014
    Assignee: Samsung Electronics Co., Ltd.
    Inventors: Sung-Yeon Lee, Yeong-Taek Lee
  • RESISTIVE MEMORY DEVICE COMPRISING SELECTIVELY DISABLED WRITE DRIVER
    Publication number: 20140211538
    Abstract: A nonvolatile memory device comprises a resistive memory cell, a write driver configured to write data to the resistive memory cell during a write period comprising a plurality of loops, and a sense amplifier configured to verify whether the data is correctly written to the resistive memory cell in each of the loops. Where the sense amplifier verifies that the data is correctly written in a k-th loop among the loops, the write driver is disabled from a (k+1)-th loop to an end of the write period.
    Type: Application
    Filed: March 13, 2013
    Publication date: July 31, 2014
    Applicant: SAMSUNG ELECTRONICS CO., LTD.
    Inventors: Sung-Yeon Lee, Yeong-Taek Lee
  • NONVOLATILE MEMORY DEVICE USING VARIABLE RESISTIVE ELEMENT AND MEMORY SYSTEM HAVING THE SAME
    Publication number: 20140198556
    Abstract: A nonvolatile memory device, which has an improved read reliability through a refresh operation, and a memory system, are provided. The nonvolatile memory device includes a resistive memory cell, a reference resistor corresponding to the resistive memory cell, a reference sense amplifier electrically connected to the reference resistor and configured to change a transition time of an output value of the reference resistor, and a refresh request signal generator configured to output the refresh request signal for the resistive memory cell when the transition time of an output value of the reference resistor is in a preset refresh requiring period.
    Type: Application
    Filed: December 6, 2013
    Publication date: July 17, 2014
    Applicant: Samsung Electronics Co., Ltd.
    Inventors: Sung-Yeon Lee, Yeong-Taek Lee
  • MULTI-BIT FLASH MEMORY DEVICE AND MEMORY CELL ARRAY
    Publication number: 20140185378
    Abstract: A flash memory device includes a plurality of memory blocks. A selected memory block among the plurality of memory blocks includes 2? pages of data. The selected memory block includes different types of memory cells capable of storing different numbers of bits.
    Type: Application
    Filed: March 6, 2014
    Publication date: July 3, 2014
    Inventors: Ki-Tae PARK, Ki-Nam KIM, Yeong-Taek LEE
  • Nonvolatile Memory Devices Using Variable Resistive Elements and Related Driving Methods Thereof
    Publication number: 20140160831
    Abstract: Driving methods of a nonvolatile memory device are provided. The driving method includes providing a start pulse adjusted based on a previous write operation to a resistive memory cell to write data, verifying whether the data has accurately been written using the start pulse, and executing a write operation on the resistive memory cell by an incremental one-way write method or a decremental one-way write method according to the verify result. Related nonvolatile memory devices are also provided.
    Type: Application
    Filed: December 9, 2013
    Publication date: June 12, 2014
    Inventors: Sung-Yeon Lee, Yeong-Taek Lee, Bo-Geun Kim
  • NONVOLATILE MEMORY DEVICE USING RESISTANCE MATERIAL AND METHOD OF DRIVING THE NONVOLATILE MEMORY DEVICE
    Publication number: 20140119094
    Abstract: Provided is a nonvolatile memory device using a resistance material and a method of driving the nonvolatile memory device. The nonvolatile memory device comprises a resistive memory cell which stores multiple bits; a sensing node; a clamping unit coupled between the resistive memory cell and the sensing node and provides a clamping bias to the resistive memory cell; a compensation unit which provides a compensation current to the sensing node; a sense amplifier coupled to the sensing node and senses a change in a level of the sensing node; and an encoder which codes an output value of the sense amplifier in response to a first clock signal. The clamping bias varies over time. The compensation current is constant during a read period.
    Type: Application
    Filed: July 12, 2013
    Publication date: May 1, 2014
    Inventors: Sung-Yeon Lee, Yeong-Taek Lee
  • NONVOLATILE MEMORY DEVICE USING VARIABLE RESISTANCE MATERIAL AND METHOD FOR DRIVING THE SAME
    Publication number: 20140119095
    Abstract: The nonvolatile memory device using a variable resistance material and a method for driving the same are provided. A first clamping unit connected between a resistance memory cell and a first sensing node to provide a first clamping bias to the resistance memory cell. The first clamping bias changes over time. A first compensation unit provides a compensation current to the first sensing node. A first sense amplifier is connected to the first sensing node to sense a level change of the first sensing node. In response to if first data stored in the resistance memory cell, an output value of the first sense amplifier transitions to a different state after a first amount of time from a time point from where the first clamping bias starts.
    Type: Application
    Filed: August 9, 2013
    Publication date: May 1, 2014
    Applicant: Samsung Electronics Co., Ltd.
    Inventors: Sung Yeon Lee, Yeong-Taek Lee
  • Methods of operating non-volatile memory devices during write operation interruption, non-volatile memory devices, memories and electronic systems operating the same
    Patent number: 8713408
    Abstract: A non-volatile memory device may operate by writing a portion of a new codeword to an address in the device that stores an old codeword, as part of a write operation. An interruption of the write operation can be detected before completion, which indicates that the address stores the portion of the new codeword and a portion of the old codeword. The portion of the old codeword can be combined with the portion of the new codeword to provide an updated codeword. Error correction bits can be generated using the updated codeword and the error correction bits can be written to the address.
    Type: Grant
    Filed: July 28, 2011
    Date of Patent: April 29, 2014
    Assignee: Samsung Electronics Co., Ltd.
    Inventors: Kwang Jin Lee, Yeong Taek Lee, Woo Yeong Cho, Hoi Ju Chung
  • Non-volatile memory array and device using erase markers
    Patent number: 8711610
    Abstract: A non-volatile memory device, non-volatile memory cell array and related method of operation are disclosed. The non-volatile memory cell array includes a defined data unit stored in a plurality of non-volatile memory cells capable of being electrically overwritten within the non-volatile memory cell array, and an erase marker corresponding to the data unit and indicating whether the data unit is in an erased state or a not-erased state.
    Type: Grant
    Filed: November 4, 2011
    Date of Patent: April 29, 2014
    Assignee: Samsung Electronics Co., Ltd.
    Inventors: Hui-Kwon Seo, Yeong-Taek Lee, Yong-Shik Shin
  • RESISTIVE MEMORY DEVICES AND METHODS OF OPERATING THE SAME
    Publication number: 20140104923
    Abstract: Resistive memory driving methods are provided. The methods may include applying an operating voltage set according to a mode of operation to a selected word line among the plurality of word lines and a selected bit line among the plurality of bit lines within a line delay period.
    Type: Application
    Filed: September 16, 2013
    Publication date: April 17, 2014
    Applicant: Samsung Electronics Co., Ltd.
    Inventors: Ingyu BAEK, Yeong-Taek Lee, KyungMin Kim
  • Multi-bit flash memory device and memory cell array
    Patent number: 8693245
    Abstract: A flash memory device includes a plurality of memory blocks. A selected memory block among the plurality of memory blocks includes 2n pages of data. The selected memory block includes different types of memory cells capable of storing different numbers of bits.
    Type: Grant
    Filed: October 24, 2011
    Date of Patent: April 8, 2014
    Assignee: Samsung Electronics Co., Ltd.
    Inventors: Ki-Tae Park, Ki-Nam Kim, Yeong-Taek Lee
  • Programming method for non-volatile memory device
    Patent number: 8411501
    Abstract: Provided is a method of programming a non-volatile memory device. The method includes applying a first programming pulse to a corresponding wordline of the non-volatile memory device, applying a second programming pulse to the wordline, wherein a voltage of the second programming pulse is different from that of the first programming pulse, and applying voltages to each bitline connected to the wordline, the voltages applied to each of the bitlines are different from each other according to a plurality of bit values to be programmed to corresponding memory cells in response to the first programming pulse or the second programming pulse.
    Type: Grant
    Filed: February 14, 2012
    Date of Patent: April 2, 2013
    Assignee: Samsung Electronics Co., Ltd.
    Inventors: Ki-tae Park, Yeong-taek Lee
  • METHODS OF OPERATING NON-VOLATILE MEMORY DEVICES DURING WRITE OPERATION INTERRUPTION, NON-VOLATILE MEMORY DEVICES, MEMORIES AND ELECTRONIC SYSTEMS OPERATING THE SAME
    Publication number: 20120311407
    Abstract: A non-volatile memory device may operate by writing a portion of a new codeword to an address in the device that stores an old codeword, as part of a write operation. An interruption of the write operation can be detected before completion, which indicates that the address stores the portion of the new codeword and a portion of the old codeword. The portion of the old codeword can be combined with the portion of the new codeword to provide an updated codeword. Error correction bits can be generated using the updated codeword and the error correction bits can be written to the address.
    Type: Application
    Filed: July 28, 2011
    Publication date: December 6, 2012
    Inventors: Kwang Jin Lee, Yeong Taek Lee, Woo Yeong Cho, Hoi Ju Chung
  • Method of erasing in non-volatile memory device
    Patent number: 8315105
    Abstract: An erasing method of post-programming in a nonvolatile memory device. The method includes post-programming dummy memory cells; verifying whether threshold voltages of the dummy memory cells are greater than or equal to a first voltage; post-programming normal memory cells; and verifying whether threshold voltages of the normal memory cells are greater than or equal to a second voltage. The first voltage is different from the second voltage.
    Type: Grant
    Filed: June 3, 2011
    Date of Patent: November 20, 2012
    Assignee: Samsung Electronics Co., Ltd.
    Inventors: Doo-Gon Kim, Ki-Tae Park, Yeong-Taek Lee
  • Method of controlling a memory cell of non-volatile memory device
    Patent number: 8305816
    Abstract: A method of controlling data includes, with respect to non-volatile memory cells connected to bit lines corresponding to a first bit line group, first controlling data written to the non-volatile memory cells by varying a control voltage, and, with respect to non-volatile memory cells connected to bit lines corresponding to a second bit line group, second controlling data written to the non-volatile memory cells by varying a control voltage. The controlling may include reading or verifying. Before verification, the method may include writing data to the non-volatile memory cells.
    Type: Grant
    Filed: August 19, 2008
    Date of Patent: November 6, 2012
    Assignee: Samsung Electronics Co., Ltd.
    Inventors: Ki-tae Park, Ki-nam Kim, Yeong-taek Lee
  • Phase change memory device, memory system, and programming method using variable verification pulses
    Patent number: 8279664
    Abstract: In a method of programming a phase change memory device, write data is programmed in a plurality of phase change memory cells by applying write pulses to each of the plurality of phase change memory cells. Whether each of the phase change memory cells is programmed is verified by applying verification pulses to each of the phase-change memory cells. A number of applications for the verification pulses and the intervals between respective applications of the verification pulses are varied in accordance with a verification result for each of the phase-change memory cells.
    Type: Grant
    Filed: September 10, 2010
    Date of Patent: October 2, 2012
    Assignee: Samsung Electronics Co., Ltd.
    Inventors: Sang-Hoan Chang, Seong-Moo Heo, Kwang-Suk Yu, Yeong-Taek Lee, Woo-Yeong Cho