Patents by Inventor Yi-Cheng CHIU
Yi-Cheng CHIU has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Patent number: 11982866Abstract: An optical element driving mechanism is provided and includes a fixed assembly, a movable assembly, a driving assembly and a stopping assembly. The fixed assembly has a main axis. The movable assembly is configured to connect an optical element, and the movable assembly is movable relative to the fixed assembly. The driving assembly is configured to drive the movable assembly to move relative to the fixed assembly. The stopping assembly is configured to limit the movement of the movable assembly relative to the fixed assembly within a range of motion.Type: GrantFiled: December 15, 2022Date of Patent: May 14, 2024Assignee: TDK TAIWAN CORP.Inventors: Chao-Chang Hu, Liang-Ting Ho, Chen-Er Hsu, Yi-Liang Chan, Fu-Lai Tseng, Fu-Yuan Wu, Chen-Chi Kuo, Ying-Jen Wang, Wei-Han Hsia, Yi-Hsin Tseng, Wen-Chang Lin, Chun-Chia Liao, Shou-Jen Liu, Chao-Chun Chang, Yi-Chieh Lin, Shang-Yu Hsu, Yu-Huai Liao, Shih-Wei Hung, Sin-Hong Lin, Kun-Shih Lin, Yu-Cheng Lin, Wen-Yen Huang, Wei-Jhe Shen, Chih-Shiang Wu, Sin-Jhong Song, Che-Hsiang Chiu, Sheng-Chang Lin
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Publication number: 20240144098Abstract: Aspects of the present disclosure provide an automated labeling system. For example, the automated labeling system can include an automated labeling module (ALM) configured to receive wireless signals and ground truth of learning object and label the wireless signals with the ground truth when receiving the ground truth to generate labeled training data. The automated labeling system can also include a training database coupled to the ALM. The training database can be configured to store the labeled training data.Type: ApplicationFiled: October 16, 2023Publication date: May 2, 2024Applicant: MEDIATEK INC.Inventors: Chao Peng WANG, Chia-Da LEE, Po-Yu CHEN, Hsiao-Chien CHIU, Yi-Cheng LU
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Publication number: 20240142833Abstract: An electronic device includes a substrate, a driving element, a first insulating layer, a pixel electrode layer, and a common electrode layer. The driving element is disposed on the substrate. The first insulating layer is disposed on the driving element. The pixel electrode layer is disposed on the first insulating layer. The first insulating layer comprises a hole, and the pixel electrode layer is electrically connected to the driving element through the hole. The common electrode layer is disposed on the pixel electrode layer. The common electrode layer comprises a slit, and the slit has an edge, and the edge is disposed in the hole.Type: ApplicationFiled: January 11, 2024Publication date: May 2, 2024Applicant: Innolux CorporationInventors: Wei-Yen Chiu, Ming-Jou Tai, You-Cheng Lu, Yi-Shiuan Cherng, Yi-Hsiu Wu, Chia-Hao Tsai, Yung-Hsun Wu
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Patent number: 11942543Abstract: A high-voltage semiconductor device structure is provided. The high-voltage semiconductor device structure includes a semiconductor substrate, a source ring in the semiconductor substrate, and a drain region in the semiconductor substrate. The high-voltage semiconductor device structure also includes a doped ring surrounding sides and a bottom of the source ring and a well region surrounding sides and bottoms of the drain region and the doped ring. The well region has a conductivity type opposite to that of the doped ring. The high-voltage semiconductor device structure further includes a conductor electrically connected to the drain region and extending over and across a periphery of the well region. In addition, the high-voltage semiconductor device structure includes a shielding element ring between the conductor and the semiconductor substrate. The shielding element ring extends over and across the periphery of the well region.Type: GrantFiled: June 29, 2022Date of Patent: March 26, 2024Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.Inventors: Hung-Chou Lin, Yi-Cheng Chiu, Karthick Murukesan, Yi-Min Chen, Shiuan-Jeng Lin, Wen-Chih Chiang, Chen-Chien Chang, Chih-Yuan Chan, Kuo-Ming Wu, Chun-Lin Tsai
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Patent number: 11923425Abstract: A method for manufacturing a device may include providing an ultra-high voltage (UHV) component that includes a source region and a drain region, and forming an oxide layer on a top surface of the UHV component. The method may include connecting a low voltage terminal to the source region of the UHV component, and connecting a high voltage terminal to the drain region of the UHV component. The method may include forming a shielding structure on a surface of the oxide layer provided above the drain region of the UHV component, forming a high voltage interconnection that connects to the shielding structure and to the high voltage terminal, and forming a metal routing that connects the shielding structure and the low voltage terminal.Type: GrantFiled: February 17, 2023Date of Patent: March 5, 2024Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.Inventors: Yi-Cheng Chiu, Tian Sheng Lin, Hung-Chou Lin, Yi-Min Chen, Chiu-Hua Chung
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Patent number: 11862675Abstract: Various embodiments of the present application are directed towards an integrated circuit (IC) in which a high voltage metal-oxide-semiconductor (HVMOS) device is integrated with a high voltage junction termination (HVJT) device. In some embodiments, a first drift well and a second drift well are in a substrate. The first and second drift wells border in a ring-shaped pattern and have a first doping type. A peripheral well is in the substrate and has a second doping type opposite the first doping type. The peripheral well surrounds and separates the first and second drift wells. A body well is in the substrate and has the second doping type. Further, the body well overlies the first drift well and is spaced from the peripheral well by the first drift well. A gate electrode overlies a junction between the first drift well and the body well.Type: GrantFiled: August 31, 2021Date of Patent: January 2, 2024Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.Inventors: Karthick Murukesan, Wen-Chih Chiang, Chun Lin Tsai, Ker-Hsiao Huo, Kuo-Ming Wu, Po-Chih Chen, Ru-Yi Su, Shiuan-Jeng Lin, Yi-Min Chen, Hung-Chou Lin, Yi-Cheng Chiu
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Publication number: 20230396896Abstract: There is provided a pixel circuit capable of outputting time difference data or image data, and including a first temporal circuit and a second temporal circuit. The first temporal circuit is used to store detected light energy of a first interval and a second interval as the time difference data. The second temporal circuit is used to store detected light energy of the second interval as the image data. The pixel circuit is used to output a pulse width signal corresponding to the time difference data or the image data in different operating modes.Type: ApplicationFiled: August 18, 2023Publication date: December 7, 2023Inventors: REN-CHIEH LIU, YI-CHENG CHIU
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Patent number: 11812176Abstract: There is provided a pixel circuit capable of outputting time difference data or image data, and including a first temporal circuit and a second temporal circuit. The first temporal circuit is used to store detected light energy of a first interval and a second interval as the time difference data. The second temporal circuit is used to store detected light energy of the second interval as the image data. The pixel circuit is used to output a pulse width signal corresponding to the time difference data or the image data in different operating modes.Type: GrantFiled: August 6, 2021Date of Patent: November 7, 2023Assignee: PIXART IMAGING INC.Inventors: Ren-Chieh Liu, Yi-Cheng Chiu
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Publication number: 20230343816Abstract: A capacitor structure for a power semiconductor device includes a semiconductor substrate, an isolation insulating layer having a ring-shape and including an outer periphery and an inner periphery defining an opening region, a first electrode disposed on the isolation insulating layer, a dielectric layer disposed on the first electrode, and a second electrode disposed on the dielectric layer.Type: ApplicationFiled: June 28, 2023Publication date: October 26, 2023Inventors: Hong-Yang CHEN, Tian Sheng Lin, Yi-Cheng Chiu, Hung-Chou Lin, Yi-Min Chen, Kuo-Ming Wu, Chiu-Hua Chung
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Publication number: 20230300490Abstract: There is provided a pixel circuit capable of outputting time difference data and image data, and including an image circuit and a difference circuit. The image circuit is used to record and output detected light energy of a first interval as the image data. The difference circuit is used to record and output a variation of detected light energy between the first interval and a second interval as the time difference data. The pixel circuit selects to output at least one of the time difference data and the image data.Type: ApplicationFiled: May 29, 2023Publication date: September 21, 2023Inventors: Ren-Chieh LIU, Yi-Cheng CHIU
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Patent number: 11728374Abstract: A capacitor structure for a power semiconductor device includes a semiconductor substrate, an isolation insulating layer having a ring-shape and including an outer periphery and an inner periphery defining an opening region, a first electrode disposed on the isolation insulating layer, a dielectric layer disposed on the first electrode, and a second electrode disposed on the dielectric layer.Type: GrantFiled: October 11, 2021Date of Patent: August 15, 2023Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.Inventors: Hong-Yang Chen, Tian Sheng Lin, Yi-Cheng Chiu, Hung-Chou Lin, Yi-Min Chen, Kuo-Ming Wu, Chiu-Hua Chung
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Patent number: 11706542Abstract: There is provided a pixel circuit capable of outputting time difference data and image data, and including an image circuit and a difference circuit. The image circuit is used to record and output detected light energy of a first interval as the image data. The difference circuit is used to record and output a variation of detected light energy between the first interval and a second interval as the time difference data. The pixel circuit selects to output at least one of the time difference data and the image data.Type: GrantFiled: August 13, 2021Date of Patent: July 18, 2023Assignee: PIXART IMAGING INC.Inventors: Ren-Chieh Liu, Yi-Cheng Chiu
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Publication number: 20230207642Abstract: A method for manufacturing a device may include providing an ultra-high voltage (UHV) component that includes a source region and a drain region, and forming an oxide layer on a top surface of the UHV component. The method may include connecting a low voltage terminal to the source region of the UHV component, and connecting a high voltage terminal to the drain region of the UHV component. The method may include forming a shielding structure on a surface of the oxide layer provided above the drain region of the UHV component, forming a high voltage interconnection that connects to the shielding structure and to the high voltage terminal, and forming a metal routing that connects the shielding structure and the low voltage terminal.Type: ApplicationFiled: February 17, 2023Publication date: June 29, 2023Inventors: Yi-Cheng CHIU, Tian Sheng LIN, Hung-Chou LIN, Yi-Min CHEN, Chiu-Hua CHUNG
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Patent number: 11688804Abstract: A semiconductor device and a manufacturing method thereof are provided. The semiconductor device has a source region and a drain region in a substrate, a gate structure and a metallic line. The source region surrounds the drain region in the substrate. The gate structure is disposed on the substrate, and disposed between the source region and the drain region. The gate structure surrounds the drain region. The metallic line is located above the source and drain regions and the gate structure and electrically connected to the drain region or the source region. The source region includes a doped region having a break region located between two opposite ends of the doped region. The metallic line extends from the drain region, across the gate structure and across the break region and beyond the source region.Type: GrantFiled: March 4, 2021Date of Patent: June 27, 2023Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.Inventors: Yi-Cheng Chiu, Tien-Sheng Lin, Sheng-Fu Hsu, Chen-Yi Lee, Chiu-Hua Chung
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Patent number: 11614359Abstract: There is provided a circuit to improve the sensing efficiency of pixels that uses the induction effect of a capacitor to duplicate a voltage deviation caused by additional electrons and uses a circuit to cancel out the voltage deviation during reading pixel data thereby improving the sensing efficiency.Type: GrantFiled: September 14, 2021Date of Patent: March 28, 2023Assignee: PIXART IMAGING INC.Inventors: Kuan Tang, Yi-Cheng Chiu, Chia-Chi Kuo, Jui-Te Chiu, Han-Chi Liu
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Patent number: 11592331Abstract: There is provided a circuit to improve the sensing efficiency of pixels that uses the induction effect of a capacitor to duplicate a voltage deviation caused by additional electrons and uses a circuit to cancel out the voltage deviation during reading pixel data thereby improving the sensing efficiency.Type: GrantFiled: September 14, 2021Date of Patent: February 28, 2023Assignee: PIXART IMAGING INC.Inventors: Kuan Tang, Yi-Cheng Chiu, Chia-Chi Kuo, Jui-Te Chiu, Han-Chi Liu
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Patent number: 11592330Abstract: There is provided a circuit to improve the sensing efficiency of pixels that uses the induction effect of a capacitor to duplicate a voltage deviation caused by additional electrons and uses a circuit to cancel out the voltage deviation during reading pixel data thereby improving the sensing efficiency.Type: GrantFiled: September 14, 2021Date of Patent: February 28, 2023Assignee: PIXART IMAGING INC.Inventors: Kuan Tang, Yi-Cheng Chiu, Chia-Chi Kuo, Jui-Te Chiu, Han-Chi Liu
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Patent number: 11588028Abstract: A method for manufacturing a device may include providing an ultra-high voltage (UHV) component that includes a source region and a drain region, and forming an oxide layer on a top surface of the UHV component. The method may include connecting a low voltage terminal to the source region of the UHV component, and connecting a high voltage terminal to the drain region of the UHV component. The method may include forming a shielding structure on a surface of the oxide layer provided above the drain region of the UHV component, forming a high voltage interconnection that connects to the shielding structure and to the high voltage terminal, and forming a metal routing that connects the shielding structure and the low voltage terminal.Type: GrantFiled: January 15, 2021Date of Patent: February 21, 2023Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.Inventors: Yi-Cheng Chiu, Tian Sheng Lin, Hung-Chou Lin, Yi-Min Chen, Chiu-Hua Chung
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Publication number: 20220336659Abstract: A high-voltage semiconductor device structure is provided. The high-voltage semiconductor device structure includes a semiconductor substrate, a source ring in the semiconductor substrate, and a drain region in the semiconductor substrate. The high-voltage semiconductor device structure also includes a doped ring surrounding sides and a bottom of the source ring and a well region surrounding sides and bottoms of the drain region and the doped ring. The well region has a conductivity type opposite to that of the doped ring. The high-voltage semiconductor device structure further includes a conductor electrically connected to the drain region and extending over and across a periphery of the well region. In addition, the high-voltage semiconductor device structure includes a shielding element ring between the conductor and the semiconductor substrate. The shielding element ring extends over and across the periphery of the well region.Type: ApplicationFiled: June 29, 2022Publication date: October 20, 2022Inventors: Hung-Chou Lin, Yi-Cheng Chiu, Karthick Murukesan, Yi-Min Chen, Shiuan-Jeng Lin, Wen-Chih Chiang, Chen-Chien Chang, Chih-Yuan Chan, Kuo-Ming Wu, Chun-Lin Tsai
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Patent number: 11424359Abstract: A high-voltage semiconductor device structure is provided. The high-voltage semiconductor device structure includes a semiconductor substrate, a source ring in the semiconductor substrate, and a drain region in the semiconductor substrate. The high-voltage semiconductor device structure also includes a doped ring surrounding sides and a bottom of the source ring and a well region surrounding sides and bottoms of the drain region and the doped ring. The well region has a conductivity type opposite to that of the doped ring. The high-voltage semiconductor device structure further includes a conductor electrically connected to the drain region and extending over and across a periphery of the well region. In addition, the high-voltage semiconductor device structure includes a shielding element ring between the conductor and the semiconductor substrate. The shielding element ring extends over and across the periphery of the well region.Type: GrantFiled: January 6, 2021Date of Patent: August 23, 2022Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.Inventors: Hung-Chou Lin, Yi-Cheng Chiu, Karthick Murukesan, Yi-Min Chen, Shiuan-Jeng Lin, Wen-Chih Chiang, Chen-Chien Chang, Chih-Yuan Chan, Kuo-Ming Wu, Chun-Lin Tsai