Abstract: Various embodiments of the present application are directed towards an integrated circuit (IC) in which a bootstrap metal-oxide-semiconductor (MOS) device is integrated with a high voltage metal-oxide-semiconductor (HVMOS) device and a high voltage junction termination (HVJT) device. In some embodiments, a drift well is in the semiconductor substrate. The drift well has a first doping type and has a ring-shaped top layout. A first switching device is on the drift well. A second switching device is on the semiconductor substrate, at an indent in a sidewall the drift well. A peripheral well is in the semiconductor substrate and has a second doping type opposite the first doping type. The peripheral well surrounds the drift well, the first switching device, and the second switching device, and further separates the second switching device from the drift well and the first switching device.

Abstract: The present disclosure, in some embodiments, relates to a high voltage resistor device. The device includes a buried well region disposed within a substrate and having a first doping type. A drift region is disposed within the substrate and contacts the buried well region. The drift region has the first doping type. A body region is disposed within the substrate and has a second doping type. The body region laterally contacts the drift region and vertically contacts the buried well region. An isolation structure is over the drift region and a resistor structure is over the isolation structure.

Abstract: Various embodiments of the present application are directed towards an integrated circuit (IC) in which a high voltage metal-oxide-semiconductor (HVMOS) device is integrated with a high voltage junction termination (HVJT) device. In some embodiments, a first drift well and a second drift well are in a substrate. The first and second drift wells border in a ring-shaped pattern and have a first doping type. A peripheral well is in the substrate and has a second doping type opposite the first doping type. The peripheral well surrounds and separates the first and second drift wells. A body well is in the substrate and has the second doping type. Further, the body well overlies the first drift well and is spaced from the peripheral well by the first drift well. A gate electrode overlies a junction between the first drift well and the body well.

Abstract: The present disclosure relates to a high voltage resistor device that is able to receive high voltages using a small footprint, and an associated method of fabrication. In some embodiments, the high voltage resistor device has a substrate including a first region with a first doping type, and a drift region arranged within the substrate over the first region and having a second doping type. A body region having the first doping type laterally contacts the drift region. A drain region having the second doping type is arranged within the drift region, and an isolation structure is over the substrate between the drain region and the body region. A resistor structure is over the isolation structure and has a high-voltage terminal coupled to the drain region and a low-voltage terminal coupled to a gate structure over the isolation structure.

Abstract: The present invention provides a global shutter high dynamic range pixel and a global shutter high dynamic range image sensor. The global shutter high dynamic range pixel includes: a photoelectric transducer unit, a floating node, a first charge transfer unit, a second charge transfer unit and a pixel signal output unit. The first charge transfer unit includes a Metal-Oxide-Semiconductor (MOS) capacitor. The MOS capacitor is configured to operably accumulate at least a portion of the charges transferred from the photoelectric transducer unit. The MOS capacitor is turned ON or OFF according to a control signal, thereby forming a gate-induced potential well internally within the MOS capacitor, so as to control the portion of charges.

Abstract: A glass material is provided, which has a composition of M2O—ZnO-M?203—Bi2O3—SiO2, wherein M is Li, Na, K, or a combination thereof, and M? is B, Al, or a combination thereof. A fluorescent composite material can be composed of the glass material and a phosphor material. The fluorescent composite material may collocate with an excitation light source to provide a light-emitting device.

Abstract: A core-shell fluorescent material and a light source device using the same are disclosed. The core-shell fluorescent material includes a core and a shell for generating an emitting light with wavelength within 520 and 800 nm after absorbing an exciting light with wavelength within 370 and 500 nm. The core may include yellow, green or red fluorescent powder, and the shell includes manganese (IV)-doped fluoride compound. The light source device generally includes the core-shell fluorescent material, a radiation source, leads and a package. The leads provide current to the radiation source and cause the radiation source to emit radiation. The core-shell fluorescent material is coated on the package for receiving the radiation so as to generate a high quality emission served as the desired light source for the field of lighting and displaying.

Abstract: In some embodiments, a semiconductor device includes a transistor, an isolation component, and a conductive layer. The transistor includes a source region and a drain region. The isolation component surrounds the source region. The conductive layer is configured for interconnection of the drain region. The conductive component is between the conductive layer and the isolation component, configured to shield the isolation component from an electric field over the isolation component.

Abstract: In some embodiments, a semiconductor device includes a transistor, an isolation component, and a conductive layer. The transistor includes a source region and a drain region. The isolation component surrounds the source region. The conductive layer is configured for interconnection of the drain region. The conductive component is between the conductive layer and the isolation component, configured to shield the isolation component from an electric field over the isolation component.

Abstract: A core-shell fluorescent material and a light source device using the same are disclosed. The core-shell fluorescent material includes a core and a shell for generating an emitting light with wavelength within 520 and 800 nm after absorbing an exciting light with wavelength within 370 and 500 nm. The core may include yellow, green or red fluorescent powder, and the shell includes manganese (IV)-doped fluoride compound. The light source device generally includes the core-shell fluorescent material, a radiation source, leads and a package. The leads provide current to the radiation source and cause the radiation source to emit radiation. The core-shell fluorescent material is coated on the package for receiving the radiation so as to generate a high quality emission served as the desired light source for the field of lighting and displaying.