Abstract: An image sensor includes a pair of pixel sharing circuits, a second reset transistor, an amplifier transistor, a readout transistor and a control circuit. The pair of pixel sharing circuits connected to a floating diffusion node, each including a photon device, a first reset transistor, a capture transistor, a holding transistor, a capacitor and a sharing transistor. The control circuit is configured to control the first reset transistor, the first capture transistor, the first holding transistor and the sharing transistor of each of the pair of sharing pixel circuits to be turned on or off.

Abstract: A method of image sensor apparatus includes: providing pixel array having pixel units arranged in M rows and N columns; providing N parallel column readout circuits each being arranged for reading out pixel data of one corresponding column; disposing a horizontal shift register in row direction coupled to the N parallel column readout circuits, to receive a pulse signal and a clock signal, sequentially shift a phase of the pulse signal according to the clock signal, and scan a corresponding column according to the shifted phase of the pulse signal; and using a column select circuit having N latches to receive a power down digital control signal transmitted from a microcontroller wherein the power down digital control signal is used to disable at least one column readout circuit to enable and select a portion of the set of N parallel column readout circuits.

Abstract: A column parallel ADC circuit includes: plural column ADCs and a digital processing circuit. The plural column ADCs generate respective plural digital counts. The plural column ADCs include a first column ADC and a second column ADC. The first column ADC generates a first digital count according to a first analog signal, and the second column ADC generates a second digital count according to a second analog signal. The first digital count is a difference between a first digital signal and a second digital signal. The first and the second digital signals correspond to the first and the second analog signals respectively. The digital processing circuit generates the plural digital signals, wherein the digital processing circuit generates the first digital signal according to the first digital count and the second digital signal.

Abstract: A method of image sensor apparatus includes: providing pixel array having pixel units arranged in M rows and N columns; providing N parallel column readout circuits each being arranged for reading out pixel data of one corresponding column; disposing a horizontal shift register in row direction coupled to the N parallel column readout circuits, to receive a pulse signal and a clock signal, sequentially shift a phase of the pulse signal according to the clock signal, and scan a corresponding column according to the shifted phase of the pulse signal; and using a column select circuit having N latches to receive a power down digital control signal transmitted from a microcontroller wherein the power down digital control signal is used to disable at least one column readout circuit to enable and select a portion of the set of N parallel column readout circuits.

Abstract: The present disclosure, in some embodiments, relates to a high voltage resistor device. The device includes a buried well region disposed within a substrate and having a first doping type. A drift region is disposed within the substrate and contacts the buried well region. The drift region has the first doping type. A body region is disposed within the substrate and has a second doping type. The body region laterally contacts the drift region and vertically contacts the buried well region. An isolation structure is over the drift region and a resistor structure is over the isolation structure.

Abstract: A high-voltage semiconductor device structure is provided. The high-voltage semiconductor device structure includes a semiconductor substrate, a source ring in the semiconductor substrate, and a drain region in the semiconductor substrate. The high-voltage semiconductor device structure also includes a doped ring surrounding sides and a bottom of the source ring and a well region surrounding sides and bottoms of the drain region and the doped ring. The well region has a conductivity type opposite to that of the doped ring. The high-voltage semiconductor device structure further includes a conductor electrically connected to the drain region and extending over and across a periphery of the well region. In addition, the high-voltage semiconductor device structure includes a shielding element ring between the conductor and the semiconductor substrate. The shielding element ring extends over and across the periphery of the well region.

Abstract: An image sensor includes a pair of pixel sharing circuits, a second reset transistor, an amplifier transistor, a readout transistor and a control circuit. The pair of pixel sharing circuits connected to a floating diffusion node, each including a photon device, a first reset transistor, a capture transistor, a holding transistor, a capacitor and a sharing transistor. The control circuit is configured to control the first reset transistor, the first capture transistor, the first holding transistor and the sharing transistor of each of the pair of sharing pixel circuits to be turned on or off.

Abstract: Various embodiments of the present application are directed towards an integrated circuit (IC) in which a bootstrap metal-oxide-semiconductor (MOS) device is integrated with a high voltage metal-oxide-semiconductor (HVMOS) device and a high voltage junction termination (HVJT) device. In some embodiments, a drift well is in the semiconductor substrate. The drift well has a first doping type and has a ring-shaped top layout. A first switching device is on the drift well. A second switching device is on the semiconductor substrate, at an indent in a sidewall the drift well. A peripheral well is in the semiconductor substrate and has a second doping type opposite the first doping type. The peripheral well surrounds the drift well, the first switching device, and the second switching device, and further separates the second switching device from the drift well and the first switching device.

Abstract: A column parallel ADC circuit includes: plural column ADCs and a digital processing circuit. The plural column ADCs generate respective plural digital counts. The plural column ADCs include a first column ADC and a second column ADC. The first column ADC generates a first digital count according to a first analog signal, and the second column ADC generates a second digital count according to a second analog signal. The first digital count is a difference between a first digital signal and a second digital signal. The first and the second digital signals correspond to the first and the second analog signals respectively. The digital processing circuit generates the plural digital signals, wherein the digital processing circuit generates the first digital signal according to the first digital count and the second digital signal.

Abstract: An event detection device includes a sensor array and a processor. The sensor array is adapted to capture one image. The processor is electrically connected with the sensor array. The processor is adapted to identify if the captured image contains a specific pattern, and trigger an external device to determine whether the specific pattern matches a predetermined feature when the captured image contains the specific pattern.

Abstract: Various embodiments of the present application are directed towards an integrated circuit (IC) in which a bootstrap metal-oxide-semiconductor (MOS) device is integrated with a high voltage metal-oxide-semiconductor (HVMOS) device and a high voltage junction termination (HVJT) device. In some embodiments, a drift well is in the semiconductor substrate. The drift well has a first doping type and has a ring-shaped top layout. A first switching device is on the drift well. A second switching device is on the semiconductor substrate, at an indent in a sidewall the drift well. A peripheral well is in the semiconductor substrate and has a second doping type opposite the first doping type. The peripheral well surrounds the drift well, the first switching device, and the second switching device, and further separates the second switching device from the drift well and the first switching device.

Abstract: A capacitor structure for a power semiconductor device includes a semiconductor substrate, an isolation insulating layer having a ring-shape and including an outer periphery and an inner periphery defining an opening region, a first electrode disposed on the isolation insulating layer, a dielectric layer disposed on the first electrode, and a second electrode disposed on the dielectric layer.

Abstract: An image sensor including a first pixel circuit, a second pixel circuit, a first readout line, a second readout line, a first readout circuit, a second readout circuit and an average switch is provided. The first and second pixel circuits are in two columns of a pixel array. The first readout line transmits pixel data of the first pixel circuit to the first readout circuit. The second readout line transmits pixel data of the second pixel circuit to the second readout circuit. The average switch is arranged between the first and second readout lines and used to electrically connect the first and second readout lines in an average mode to average the pixel data on the first and second readout lines.

Abstract: Various embodiments of the present application are directed towards an integrated circuit (IC) in which a bootstrap metal-oxide-semiconductor (MOS) device is integrated with a high voltage metal-oxide-semiconductor (HVMOS) device and a high voltage junction termination (HVJT) device. In some embodiments, a drift well is in the semiconductor substrate. The drift well has a first doping type and has a ring-shaped top layout. A first switching device is on the drift well. A second switching device is on the semiconductor substrate, at an indent in a sidewall the drift well. A peripheral well is in the semiconductor substrate and has a second doping type opposite the first doping type. The peripheral well surrounds the drift well, the first switching device, and the second switching device, and further separates the second switching device from the drift well and the first switching device.

Abstract: Various embodiments of the present application are directed towards an integrated circuit (IC) in which a high voltage metal-oxide-semiconductor (HVMOS) device is integrated with a high voltage junction termination (HVJT) device. In some embodiments, a first drift well and a second drift well are in a substrate. The first and second drift wells border in a ring-shaped pattern and have a first doping type. A peripheral well is in the substrate and has a second doping type opposite the first doping type. The peripheral well surrounds and separates the first and second drift wells. A body well is in the substrate and has the second doping type. Further, the body well overlies the first drift well and is spaced from the peripheral well by the first drift well. A gate electrode overlies a junction between the first drift well and the body well.

Abstract: Various embodiments of the present application are directed towards an integrated circuit (IC) in which a high voltage metal-oxide-semiconductor (HVMOS) device is integrated with a high voltage junction termination (HVJT) device. In some embodiments, a first drift well and a second drift well are in a substrate. The first and second drift wells border in a ring-shaped pattern and have a first doping type. A peripheral well is in the substrate and has a second doping type opposite the first doping type. The peripheral well surrounds and separates the first and second drift wells. A body well is in the substrate and has the second doping type. Further, the body well overlies the first drift well and is spaced from the peripheral well by the first drift well. A gate electrode overlies a junction between the first drift well and the body well.

Abstract: There is provided a circuit to improve the sensing efficiency of pixels that uses the induction effect of a capacitor to duplicate a voltage deviation caused by additional electrons and uses a circuit to cancel out the voltage deviation during reading pixel data thereby improving the sensing efficiency.

Abstract: An image sensor including a first pixel circuit, a second pixel circuit, a first readout line, a second readout line, a first readout circuit, a second readout circuit and an average switch is provided. The first and second pixel circuits are in two columns of a pixel array. The first readout line transmits pixel data of the first pixel circuit to the first readout circuit. The second readout line transmits pixel data of the second pixel circuit to the second readout circuit. The average switch is arranged between the first and second readout lines and used to electrically connect the first and second readout lines in an average mode to average the pixel data on the first and second readout lines.

Abstract: A high-voltage semiconductor device structure is provided. The high-voltage semiconductor device structure includes a semiconductor substrate, a source ring in the semiconductor substrate, and a drain region in the semiconductor substrate. The high-voltage semiconductor device structure also includes a doped ring surrounding sides and a bottom of the source ring and a well region surrounding sides and bottoms of the drain region and the doped ring. The well region has a conductivity type opposite to that of the doped ring. The high-voltage semiconductor device structure further includes a conductor electrically connected to the drain region and extending over and across a periphery of the well region. In addition, the high-voltage semiconductor device structure includes a shielding element ring between the conductor and the semiconductor substrate. The shielding element ring extends over and across the periphery of the well region.

Abstract: The present disclosure relates to a high voltage resistor device that is able to receive high voltages using a small footprint, and an associated method of fabrication. In some embodiments, the high voltage resistor device has a substrate including a first region with a first doping type, and a drift region arranged within the substrate over the first region and having a second doping type. A body region having the first doping type laterally contacts the drift region. A drain region having the second doping type is arranged within the drift region, and an isolation structure is over the substrate between the drain region and the body region. A resistor structure is over the isolation structure and has a high-voltage terminal coupled to the drain region and a low-voltage terminal coupled to a gate structure over the isolation structure.