Abstract: An electronic device may include a curved cover layer and an antenna. The antenna may include a ground and a resonating element on a curved surface of a substrate. The curved surface may have a curvature that matches that of the cover layer. The resonating element may include first, second, and third arms fed by a feed. The first arm and a portion of the ground may form a loop antenna resonating element. The second arm and the first arm may form an inverted-F antenna resonating element, where a portion of the first arm forms a return path to the antenna ground for the inverted-F antenna resonating element. A gap between the first and second arms may form a distributed capacitance. The third arm may form an L-shaped antenna resonating element. The antenna may have a wide bandwidth from below 2.4 GHz to greater than 9.0 GHz.

Abstract: Germanium-based sensors are disclosed herein. An exemplary germanium-based sensor includes a germanium photodiode and a junction field effect transistor (JFET) formed from a germanium layer disposed on and/or in a silicon substrate. A doped silicon layer, which can be formed by in-situ doping epitaxially grown silicon, is disposed between the germanium layer and the silicon substrate. In embodiments where the germanium layer is on the silicon substrate, the doped silicon layer is disposed between the germanium layer and an oxide layer. The JFET has a doped polysilicon gate, and in some embodiments, a gate diffusion region is disposed in the germanium layer under the doped polysilicon gate. In some embodiments, a pinned photodiode passivation layer is disposed in the germanium layer. In some embodiments, a pair of doped regions in the germanium layer is configured as an e-lens of the germanium-based sensor.

Abstract: The present disclosure relates to a semiconductor structure and a manufacturing method thereof. The method of manufacturing a semiconductor structure includes: providing a base; forming a plurality of first trenches arranged in parallel at intervals and extending along a first direction, and an initial active region between two adjacent ones of the first trenches, wherein the initial active region includes a first initial source-drain region close to a bottom of the first trench, a second initial source-drain region away from the bottom of the first trench, and an initial channel region located between the first initial source-drain region and the second initial source-drain region; forming a protective dielectric layer, wherein the protective dielectric layer covers a sidewall of the second initial source-drain region and a sidewall of the initial channel region; thinning the first initial source-drain region.

Abstract: Various embodiments of the present disclosure are directed towards an image sensor with a passivation layer for dark current reduction. A device layer overlies a substrate. Further, a cap layer overlies the device layer. The cap and device layers and the substrate are semiconductor materials, and the device layer has a smaller bandgap than the cap layer and the substrate. For example, the cap layer and the substrate may be silicon, whereas the device layer may be or comprise germanium. A photodetector is in the device and cap layers, and the passivation layer overlies the cap layer. The passivation layer comprises a high k dielectric material and induces formation of a dipole moment along a top surface of the cap layer.

Abstract: A self-driving vehicle test method, apparatus, and system are provided, and relate to the field of self-driving technologies. The system includes a software control module, a motion control module, and a plurality of motion platforms. The software control module may obtain information about a first test scenario, and send the information about the first test scenario to the motion control module. After receiving the information about the first test scenario, the motion control module may determine a test motion platform and a target motion platform from the plurality of motion platforms based on the information about the first test scenario, and send parameter information of each determined motion platform to the motion platform, so that the motion platform performs a corresponding operation based on the parameter information. In this way, a self-driving vehicle can be tested without participation of test personnel, thereby improving test efficiency and reducing labor costs.

Abstract: Embodiments relate to a three-dimensional semiconductor structure and a formation method thereof. The three-dimensional semiconductor structure includes: a substrate; and a device structure positioned on a top surface of the substrate. The device structure includes memory rows arranged at intervals along a first direction, each of the memory rows includes memory cells arranged at intervals along a second direction and a gap between adjacent two of the memory cells, and each of the memory cells includes a first stacked layer and a word line structure. The word line structure includes a first part positioned in the first stacked layer and a second part extending out of the first stacked layer along the first direction. At least adjacent two of the memory rows exist, and the second part of the memory cell in one of the memory rows extends into the gap in another one of the memory rows.

Abstract: A mobile network selection method, device, mobile user equipment and a storage medium are provided. The method includes when a mobile user equipment supporting a Closed Access Group CAG function automatically selects a mobile network, determining, by a Non-Access Stratum NAS function of the mobile user equipment according to information in a Universal Subscriber Identity Module USIM of the mobile user equipment, whether to allow the mobile user equipment to access a CAG cell of a Public Land Mobile Network PLMN; when the mobile user equipment receives a broadcast message of a CAG cell and the mobile user equipment is allowed to access the CAG cell of the PLMN, selecting, by the NAS function, a mobile network corresponding to a PLMN identifier indicated in the broadcast message of the CAG cell.

Abstract: The present disclosure relates to a semiconductor structure and a manufacturing method thereof. The semiconductor structure includes: a base, including a semiconductor substrate, the semiconductor substrate is provided with first trenches extending along a first direction and second trenches extending along a second direction, the first trenches intersect with the second trenches to form a plurality of semiconductor pillars on the semiconductor substrate, the second trench is filled with a first dielectric layer, a second dielectric layer is provided on a top of the semiconductor pillar, and a third dielectric layer is provided on a sidewall of the first trench; an isolation layer, located in the semiconductor substrate below the first trenches and extending along the second direction; and a bit line, located on a surface of the isolation layer and extending along the second direction, the bit line is connected to a bottom of the semiconductor pillar.

Abstract: Provided is the use of human serum albumin in the manufacturing of a drug for treating diabetes, obesity, atherosclerosis, Alzheimer's disease, Parkinson's disease and other diseases. In a preferred embodiment, the human serum albumin is the recombinantly prepared young and uninjured human serum albumin, and has achieved excellent effects in reducing the blood sugar level of a diabetic patient.

Abstract: A range hood, includes a fan system (2), the fan system (2) having a volute (21) and an impeller (22); the volute (21) includes a front cover (211), a rear cover (212) and an annular wall (213); the annular wall (213) has a volute tongue (214); the front cover (211) has an air inlet (215), the air inlet (215) faces downward to make the range hood to be a horizontal range hood; the volute tongue (214) is gradually inclined from the rear cover (212) to the front cover (211) in a direction opposite to the rotation direction of the impeller (22).

Abstract: The present invention relates to a solid-state blended polymer system that has the property of tunable lasing wavelength through adjusting the blending ratio. It can be used for health monitoring, environmental monitoring sensor and tissue imaging. Current materials do not have the broad tunable range; from blue to infra-red across the optical range. By using the same two polymers, it is possible to produce laser emitting blue to red colour. It simplifies the design, eases multi-wavelength laser sensor system integration and therefore, making the production cost-effective.

Abstract: Various embodiments of the present disclosure are directed towards an image sensor with a passivation layer for dark current reduction. A device layer overlies a substrate. Further, a cap layer overlies the device layer. The cap and device layers and the substrate are semiconductor materials, and the device layer has a smaller bandgap than the cap layer and the substrate. For example, the cap layer and the substrate may be silicon, whereas the device layer may be or comprise germanium. A photodetector is in the device and cap layers, and the passivation layer overlies the cap layer. The passivation layer comprises a high k dielectric material and induces formation of a dipole moment along a top surface of the cap layer.

Abstract: The present disclosure provides a semiconductor structure and a manufacturing method thereof, and relates to the technical field of semiconductors. The semiconductor structure includes: a substrate, a first stacked structure is disposed on the substrate, and includes a memory cell array; a plurality of word lines (WLs), arranged at intervals and extending along a first direction; a plurality of bit lines (BLs), arranged at intervals and extending along a second direction, one end of each of the plurality of BLs away from the memory cell array forms a step in the first direction, each BL is provided with a groove on a surface of the step, and the second direction and the first direction cross each other; and a plurality of BL plugs, arranged at intervals and extending along the first direction, one end of each BL plug is correspondingly disposed in the groove of one of the BLs.

Abstract: A wireless communication system comprises a base station and one or more relay docks and transmits directional wave signals between components using high frequency waves, such as millimeter waves. A beam forming decision engine utilizes position information collected from one or more position or motion sensors of a user device to determine a direction in which to form a directional wave signal being transmitted between components of the wireless communication system.

Abstract: Provided is a semiconductor structure, a test structure, a manufacturing method and a test method. The semiconductor structure includes a substrate, which includes multiple pillars spaced along a first direction by first trenches; second trenches formed at opposite sides along a second direction of each of the pillars; target conductive structures extending along the second direction in the substrate directly below adjacent second trenches; and a first dielectric layer, a conductive layer and a second dielectric layer sequentially stacked in the first trenches and the second trenches. A depth of the first trenches is greater than that of the second trenches. The first direction intersects the second direction.

Abstract: The present disclosure provides a semiconductor structure and a manufacturing method thereof. The manufacturing method includes: providing a substrate, where the substrate includes first grooves arranged at intervals therein along a first direction and a filling layer in the first groove; patterning the substrate, to form second grooves, where the second groove is located on a top surface of the first groove, forming a protective layer on a surface of the substrate, where the protective layer is different from the filling layer; forming a bit line structure at a bottom of the second groove; forming a first isolation layer, where the first isolation layer is located in the second groove and on a top surface of the bit line structure; partially removing the filling layer, where the retained filling layer is flush with an upper surface of the first isolation layer.

Abstract: A method for forming a three-dimensional memory provided by embodiments includes: forming a substrate and a stacked layer, where the stacked layer includes first semiconductor layers and second semiconductor layers alternately stacked, a thickness of the second semiconductor layers is D1, the first semiconductor layers include a plurality of channel regions as well as a first region and a second region arranged on opposite two sides of each of the plurality of channel regions along a first direction, and the first direction is a direction parallel to the top surface of the substrate; forming a plurality of first openings respectively exposing the plurality of channel regions, a gap between adjacent two of the plurality of first openings along a second direction has a width D2, D1>D2; and depositing a conductive layer along the plurality of first openings.

Abstract: The present application discloses an electric vehicle, and an electric heating device and a control system thereof. The electric heating device includes: n resistance heating units, independently electrically connected in parallel with each other; n switches, electrically connected in series with respective resistance heating units for independently controlling power-on or power-off of the respective resistance heating units; and a controller, configured to selectively turn on or turn off any at least one of the n switches according to a working condition of the electric vehicle, wherein n is a natural number equal to or greater than 2.

Abstract: The present invention relates to a novel meta-image-based tumor detection deepnet pipeline to increase the diagnosis capacity by cooperating with experts' knowledge for accurate tumor recognition in medical images.

Abstract: Image sensors and methods of forming the same are provided. An image sensor according to the present disclosure includes a silicon substrate, a germanium region disposed in the silicon substrate, a doped semiconductor isolation layer disposed between the silicon substrate and the germanium region, a heavily p-doped region disposed on the germanium region, a heavily n-doped region disposed on the silicon substrate, a first n-type well disposed immediately below the germanium region, a second n-type well disposed immediately below the heavily n-doped region, and a deep n-type well disposed below and in contact with the first n-type well and the second n-type well.