Abstract: Described herein is a system with a first network element and a second network element. The first network element contains a processor configured to synchronize with the second network element; and maintain synchronization with the second network element. The first network element is a small cell eNB and the second network element is one of the following: a macro cell enhanced node-B (eNB); or a small cell eNB.

Abstract: A viewpoint image processing method and a related device are provided, and relate to the artificial intelligence/computer vision field. The method includes: obtaining a preset quantity of first viewpoint images; obtaining a geometric feature matrix between the preset quantity of first viewpoint images; generating an adaptive convolution kernel corresponding to each pixel of the preset quantity of first viewpoint images based on the geometric feature matrix and location information of a to-be-synthesized second viewpoint image, where the location information represents a viewpoint location of the second viewpoint image; generating the preset quantity of to-be-processed virtual composite pixel matrices based on the adaptive convolution kernels and the pixels of the preset quantity of existing viewpoint images; and synthesizing the second viewpoint image by using the preset quantity of to-be-processed virtual composite pixel matrices.

Abstract: Discussed are a metal plate for resistance welding and a resistance welding method using the same, wherein the metal plate is for being resistance-welded to an electrode terminal of a cylindrical battery, and the metal plate includes a body; and a pair of protrusion units located spaced apart from each other by a predetermined distance, the pair of protrusion unit being provided at one side surface of the body, and a slit is formed between the pair of protrusion units.

Abstract: A method of forming a semiconductor device is provided that includes forming a first source/drain region in a supporting substrate abutting a fin structure; and forming an isolation region in the supporting substrate adjacent to a first side of the fin structure, wherein the first source/drain region is positioned on an opposing second side of the fin structure. A gate structure is formed on the channel region portion of the fin structure. In a following step, a second source/drain region on an upper surface of the fin structure. Contacts can be formed aligned to the first source/drain region and the gate structure.

Abstract: The present disclosure discloses a method for forming a lead-carbon compound interface layer on a lead-based substrate, wherein the lead-based substrate has a surface, and the method includes steps of: causing an acidic solution to contact with a carbon material and a lead-containing material to form a carbon-containing plumbate precursor having an ionic lead; and reducing the ionic lead in the carbon-containing plumbate precursor to form the lead-carbon compound interface layer on the surface.

Abstract: A storage device is disclosed. The storage device is configured to: determine data states for a first set of memory cells of a first neighboring word line of the and a second set of memory cells of a second neighboring word line, the first and the second neighboring word lines being adjacent to a selected word line; identify a zone of a plurality of zones for each data state combination of the data states, each data state combination comprising a data state of a memory cell of the first set of memory cells and a data state of a memory cell of the second set of memory cells, each zone of the plurality of zones corresponding to a data retention compensation scheme; and perform a read operation on the selected word line including applying each data retention compensation scheme corresponding to any zones identified.

Abstract: Embodiments of the invention are directed to a semiconductor device structure that includes a first channel region over a substrate, a second channel region over the first channel region, and a merged source or drain (S/D) region over the substrate and adjacent to the first channel region and the second channel region. The merged S/D region is communicatively coupled to the first channel region and the second channel region. A wrap-around S/D contact is configured such that it is on a top surface, sidewalls, and a bottom surface of the merged S/D region.

Abstract: Embodiments of the invention are directed to a method of forming a semiconductor device. In a non-limiting example, the method includes forming a first channel region over a substrate, forming a second channel region over the first channel region, and forming a merged source or drain (S/D) region over the substrate and adjacent to the first channel region and the second channel region. The merged S/D region is communicatively coupled to the first channel region and the second channel region. A wrap-around S/D contact is formed such that it is on a top surface, sidewalls, and a bottom surface of the merged S/D region.

Abstract: The present disclosure provides a halogen-free inorganic flame retardant material and a preparation method and an application thereof, belonging to the technical field of inorganic liquid flame retardants. The halogen-free inorganic flame retardant material of the present disclosure is prepared by mixing raw materials comprising the following components: an aluminum sulfate aqueous solution, a saturated ferric sulfate aqueous solution and a sodium metasilicate aqueous solution at a volume ratio of 2.5:2.5:1˜2:3:1; the sodium metasilicate aqueous solution and the aluminum sulfate aqueous solution independently has a molar concentration of 0.09˜0.11 mol/L; and the saturated ferric sulfate aqueous solution is a saturated aqueous solution at 15˜17° C.

Abstract: The intelligent accompaniment generating system includes an input module, an analysis module, a generation module and a musical equipment. The input module is configured to receive a musical pattern signal derived from a raw signal. The analysis module is configured to analyze the musical pattern signal to extract a set of audio features, wherein the input module is configured to transmit the musical pattern signal to the analysis module. The generation module is configured to obtain a playing assistance information having an accompaniment pattern from the analysis module, wherein the accompaniment pattern has at least two parts having different onsets therebetween, and each onsets of the at least two parts is generated by an algorithm according to the set of audio features. The musical equipment includes a digital amplifier configured to output an accompaniment signal according to the accompaniment pattern.

Abstract: A method of forming a semiconductor structure includes forming a fin over a substrate, forming a bottom source/drain over the substrate surrounding a first portion of sidewalls of the fin, and forming a bottom spacer over the bottom source/drain and surrounding a second portion of the sidewalls of the fin. The method also includes forming a T-shaped gate stack over the bottom spacer and surrounding a third portion of the sidewalls of the fin, forming a top spacer over the T-shaped gate stack and surrounding a fourth portion of the sidewalls of the fin, and forming a top source/drain over the top spacer and surrounding a fifth portion of the sidewalls and a top surface of the fin. The T-shaped gate stack includes a gate dielectric, a gate conductor, and a gate metal extending outward from a portion of sidewalls of the gate conductor between the bottom and top spacers.

Abstract: The present disclosure provides a battery module heat management assembly, a battery pack and a vehicle. The battery module heat management assembly includes a cooling mechanism. The cooling mechanism includes: a plurality of multi-channel pipes configured to be provided at a bottom of a battery module; a first fluid collector and a second fluid collector configured to be communicated with an external cooling fluid circuit, two ends of each multi-channel pipe are respectively communicated with the first fluid collector and the second fluid collector.

Abstract: The present invention relates to a method for simultaneously transmitting and receiving multiple managed objects in order to compensate for the inadeguacies of the current 3GPP TS32.607 standard, characterized in that, the method comprises: encapsulating two or more managed objects in one or more atomic transactions according to internal attributes and data processing of the managed objects, wherein each atomic transaction includes at least two managed objects; according to a pre-defined association rule, determining association relationships between managed objects in the one atomic transaction, or determining association relationships between multiple atomic transactions and association relationships between managed objects in each of the multiple atomic transactions; and transmitting one or more atomic transactions through a communication network.

Abstract: A finned semiconductor structure including sets of relatively wide and relatively narrow fins is obtained by employing hard masks having different quality. A relatively porous hard mask is formed over a first region of a semiconductor substrate and a relatively dense hard mask is formed over a second region of the substrate. Patterning of the different hard masks using a sidewall image transfer process causes greater lateral etching of the relatively porous hard mask than the relatively dense hard mask. A subsequent reactive ion etch to form semiconductor fins causes relatively narrow fins to be formed beneath the relatively porous hard mask and relatively wide fins to be formed beneath the relatively dense hard mask.

Abstract: An image processing method and apparatus. The image processing method includes: obtaining encoded data of a first region and a neighboring region neighboring to the first region in a two-dimensional planar image, where the two-dimensional planar image is an image obtained by mapping a spherical panorama image, and the first region and the neighboring region have an overlapping region; determining a pixel value of a pixel in an image of the first region; determining a pixel value of a pixel in an image of the neighboring region; and determining a target pixel value of a pixel in the overlapping region based on the pixel value of the pixel of the first region in the overlapping region and the pixel value of the pixel of the neighboring region in the overlapping region.

Abstract: A plasma confinement ring for a plasma chamber comprises a ring-shaped element and a cylindrical element. The ring-shaped element of the plasma confinement ring surrounds a substrate support assembly in the plasma chamber and is arranged along a plane in which a substrate is arranged on the substrate support assembly. The ring-shaped element includes a plurality of orifices. The cylindrical element of the plasma confinement ring extends from an outer edge of the ring-shaped element in a direction perpendicular to the plane in which the substrate is arranged on the substrate support assembly in the plasma chamber. The plasma confinement ring is monolithic.

Abstract: The present invention is a method and system for supporting a beamforming antenna system in a mobile broadband communication network with an improved beam pattern, beam sweep pattern, pilot channel design with feedback and reporting rules, and control signaling design. Specifically, the improved beam pattern includes a method of supporting wireless communications in a wireless network forming at least two spatial beams within a cell segment where the at least two spatial beams are associated with different power levels, and separately, where at least two spatial beams can be moved across the cell segment according to a unique sweep pattern. The pilot channel design improves network bandwidth performance and improves user mobility tracking. Feedback and reporting rules can be established using a particular field designator, CQI, in the preferred embodiment.

Abstract: A dissolvable aluminum alloy can be used for components of a downhole tool in hydraulic fracturing operations with low salinity fluid at low temperatures, including fresh water. The dissolvable aluminum alloy can be dissolved completely and controlled at a dissolving rate compatible with hydraulic fracturing operations. The alloy comprises aluminum having grain boundaries, magnesium at 8.25-12% by weight, gallium at 2.5-4% by weight, and indium at 2-4% by weight. At least portions of magnesium, gallium, and indium are located in the grain boundaries. There are secondary phase particles, including Al—Mg Beta, Mg2Si, Mg and Al—Ga Gamma phases at the grain boundaries.

Abstract: The method for equal channel angular extrusion increases yield strength and ultimate tensile strength of a dissolvable aluminum alloy. A billet of a dissolvable aluminum alloy is wrapped with a sheet cover so as to form a wrapped billet. The wrapped billet is extruded through an equal channel angular extrusion die with an extrusion angle ranging 90-135 degrees so as to form an extruded billet. The step of extruding is at a temperature ranging 150-250 degrees C., an extrusion rate ranging 0.003-0.010 inches per second, and a back pressure ranging 200-10000 psi. The dissolvable aluminum alloy of the extruded billet has a yield strength and ultimate tensile strength 50% greater than the initial yield strength and initial ultimate tensile strength.

Abstract: This application provides a spherical image processing method which includes: obtaining a spherical image and determining a sphere center of the spherical image; determining a viewpoint of a user when the user views the spherical image, where the viewpoint is located at any point, other than the sphere center, in a sphere space surrounded by the spherical image; determining a pixel expansion region and a pixel shrinkage region on the spherical image based on the sphere center and the viewpoint; and performing an image processing operation on the spherical image, where the image processing operation comprises a pixel expansion processing operation on an image in the pixel expansion region, and a pixel shrinkage processing operation on an image in the pixel shrinkage region.