Abstract: The semiconductor device of this invention includes an active region formed from a group III nitride semiconductor grown on a substrate and an insulating oxide film formed in a peripheral portion of the active region by oxidizing the group III nitride semiconductor. On the active region, a gate electrode in Schottky contact with the active region extending onto the insulating oxide film and having an extended portion on the insulating oxide film is formed, and ohmic electrodes respectively serving as a source electrode and a drain electrode are formed with space from side edges along the gate length direction of the gate electrode.

Abstract: An optical writing device includes a scanning unit that scans an optical beam in a main scanning direction while shifting a scanning position in a sub-scanning direction by a predetermined pitch, a clock frequency changing unit that changes a frequency of a write clock at a position in the main scanning direction, an image data processing unit that processes image data according to change in the frequency of the write clock, and a correcting unit that adds, when a pixel is removed from the image data, removed pixel to pixels corresponding to the next write clock.

Abstract: An exposing unit optically writes respective color-separated image data on a photosensitive drum to form a latent image by using both a forward direction scanning and a backward direction scanning. A writing control unit outputs input pixel data to the exposing unit a plurality of times for enlarging and printing an input image. The writing control unit includes an output unit that outputs a main-scanning effective gate signal of dot period lengths of common multiples of all available enlargement ratios; and a suppressing unit that suppresses an output of a pixel signal to an outside of a printing range.

Abstract: A semiconductor device has an active region composed of a group III-V nitride semiconductor and ohmic electrodes and a gate electrode each formed on the active region. The active region has an entire surface thereof exposed to a plasma such that a surface potential for electrons therein is lower than in the case where the entire surface is not exposed to the plasma.

Abstract: In a battery pack including a battery case containing therein a battery cell, a wiring circuit board, and a liquid-absorbing element capable of absorbing the electrolyte leaking out from the battery cell, the liquid-absorbing element is inserted with looseness allowing for expansion in a gap formed by a retaining element on the inner wall surface of the battery case or retaining element on the wiring circuit board. Alternatively, a liquid-absorbing element consisting of a non-absorbent porous retaining element partially holding a liquid absorbent is used and the porous retaining element is fixed to the inner wall surface of the battery case or the wiring circuit board at an absorbent-free zone.

Abstract: A resin composition having a viscosity suitable for encapsulating optical devices such as light-emitting devices is provided. Specifically, the cured product of the resin composition has a refractive index greater than or equal to that of epoxy resins, exhibits excellent heat resistance and light resistance, and has thermal stress relaxation properties. The curable resin composition contains a fluorene group-containing acrylate or methacrylate represented by the following formula and a specific monofunctional acrylate or methacrylate: wherein X is —(CH2CH2O)n— or —(CH2CH2O)—CH2CH(OH)CH2O— with n being 1 to 5 and R is an acrylic or methacrylic group.

Abstract: A semiconductor device has a Group III nitride semiconductor layer and a gate electrode formed on the Group III nitride semiconductor layer. The gate electrode contains an adhesion enhancing element. A thermally oxidized insulating film is interposed between the Group III nitride semiconductor layer and the gate electrode.

Abstract: A semiconductor device has: a buffer layer formed on a conductive substrate and made of AlxGa1?xN with a high resistance; an element-forming layer formed on the buffer layer, having a channel layer, and made of undoped GaN and N-type AlyGa1?N; and a source electrode, a drain electrode and a gate electrode which are selectively formed on the element-forming layer. The source electrode is filled in a through hole provided in the buffer layer and the element-forming layer, and is thus electrically connected to the conductive substrate.

Abstract: An infrared sensor includes a series capacitor element and a reference capacitor element each exhibiting a predetermined capacitance value; an infrared-detecting capacitor element whose capacitance value varies depending on an intensity of infrared light incident on the element; and an output node being a node at which a first terminal of the series capacitor element, a first terminal of the reference capacitor element and a first terminal of the infrared-detecting capacitor element are connected to one another. The intensity of infrared light is output as a potential difference between the reference potential which is brought to a potential by applying a predetermined voltage between the series capacitor element and the reference capacitor element and the detection potential which is brought to a potential by applying a predetermined voltage between the series capacitor element and the infrared-detecting capacitor element.

Abstract: The semiconductor device of this invention includes an active region formed from a group III nitride semiconductor grown on a substrate and an insulating oxide film formed in a peripheral portion of the active region by oxidizing the group III nitride semiconductor. On the active region, a gate electrode in Schottky contact with the active region extending onto the insulating oxide film and having an extended portion on the insulating oxide film is formed, and ohmic electrodes respectively serving as a source electrode and a drain electrode are formed with space from side edges along the gate length direction of the gate electrode.

Abstract: A semiconductor device has a Group III nitride semiconductor layer and a gate electrode formed on the Group III nitride semiconductor layer. The gate electrode contains an adhesion enhancing element. A thermally oxidized insulating film is interposed between the Group III nitride semiconductor layer and the gate electrode.

Abstract: In a battery pack including a battery case containing therein a battery cell, a wiring circuit board, and a liquid-absorbing element capable of absorbing the electrolyte leaking out from the battery cell, the liquid-absorbing element is inserted with looseness allowing for expansion in a gap formed by a retaining element on the inner wall surface of the battery case or retaining element on the wiring circuit board. Alternatively, a liquid-absorbing element consisting of a non-absorbent porous retaining element partially holding a liquid absorbent is used and the porous retaining element is fixed to the inner wall surface of the battery case or the wiring circuit board at an absorbent-free zone.

Abstract: An insulating-gate semiconductor device has a first nitride semiconductor layer formed over a substrate and an insulating oxidation layer obtained by oxidizing a second nitride semiconductor layer formed on the first nitride semiconductor layer. A gate electrode is formed on the insulating oxidation layer.

Abstract: The semiconductor device of this invention includes an active region formed from a group III nitride semiconductor grown on a substrate and an insulating oxide film formed in a peripheral portion of the active region by oxidizing the group III nitride semiconductor. On the active region, a gate electrode in Schottky contact with the active region extending onto the insulating oxide film and having an extended portion on the insulating oxide film is formed, and ohmic electrodes respectively serving as a source electrode and a drain electrode are formed with space from side edges along the gate length direction of the gate electrode.

Abstract: An active region formed of a Group III nitride semiconductor is formed on a substrate. Then, an electrode is formed on the active region and a protective insulating film is formed on a part of the active region located in the peripheral portion of the electrode by oxidizing the Group III nitride semiconductor.

Abstract: An image forming apparatus and an image forming method. The image forming apparatus includes a scanner mechanism for reading out image data from an original document, and a printer mechanism for printing an image based on the image data. The printer mechanism includes a first memory for writing in the image data in synchronization with a predetermined first clock signal, a first image processor for processing the image data in synchronization with a second clock signal, a second memory for writing in the image data in synchronization with the second clock signal, a second image processor for processing the image data in synchronization with a third clock signal, and a light controller for generating a light control signal from the image data in synchronization with the third clock signal.

Abstract: An infrared sensor includes a series capacitor element and a reference capacitor element each exhibiting a predetermined capacitance value; an infrared-detecting capacitor element whose capacitance value varies depending on an intensity of infrared light incident on the element; and an output node being a node at which a first terminal of the series capacitor element, a first terminal of the reference capacitor element and a first terminal of the infrared-detecting capacitor element are connected to one another.

Abstract: An exposing unit optically writes respective color-separated image data on a photosensitive drum to form a latent image by using both a forward direction scanning and a backward direction scanning. A writing control unit outputs input pixel data to the exposing unit a plurality of times for enlarging and printing an input image. The writing control unit includes an output unit that outputs a main-scanning effective gate signal of dot period lengths of common multiples of all available enlargement ratios; and a suppressing unit that suppresses an output of a pixel signal to an outside of a printing range.

Abstract: An optical writing device includes a scanning unit that scans an optical beam in a main scanning direction while shifting a scanning position in a sub-scanning direction by a predetermined pitch, a clock frequency changing unit that changes a frequency of a write clock at a position in the main scanning direction, an image data processing unit that processes image data according to change in the frequency of the write clock, and a correcting unit that adds, when a pixel is removed from the image data, removed pixel to pixels corresponding to the next write clock.

Abstract: A semiconductor device has an active region composed of a group III-V nitride semiconductor and ohmic electrodes and a gate electrode each formed on the active region. The active region has an entire surface thereof exposed to a plasma such that a surface potential for electrons therein is lower than in the case where the entire surface is not exposed to the plasma.