Abstract: The semiconductor device of the present invention includes: a gallium nitride (GaN) compound semiconductor layer; and a Schottky electrode formed on the GaN compound semiconductor layer, wherein the Schottky electrode contains silicon.

Abstract: A semiconductor device has a first semiconductor layer composed of a group III-V nitride, an oxide film formed by oxidizing a second semiconductor layer composed of a group III-V nitride to be located on the gate electrode formation region of the first semiconductor layer, an insulating film formed on the oxide film to have a composition different from the composition of the oxide film, and a gate electrode formed on the insulating film.

Abstract: In a method for fabricating a semiconductor device, a first semiconductor layer of aluminum gallium nitride is first formed on a substrate, and a protection film containing silicon is then formed on the first semiconductor layer in such a manner that a device-isolation region is uncovered. Thereafter, the method further includes the step of heat-treating the first semiconductor layer in an oxidizing atmosphere whose temperature is adjusted to be within a range of 950° C. or more and 1050 ° C. or less.

Abstract: An antiadhesive material that is excellent in biocompatibility and bioabsorbability, as well as excellent strength in suturing and bonding, is provided. A reinforcing material 12 made of a biodegradable polymer is placed in a gelatin solution so that the reinforcing material 12 is impregnated with the solution, and the gelatin is caused to gelate and dried. By so doing, an antiadhesive material in which a gelatin film 11 and the reinforcing material 12 are integrated is obtained. The reinforcing material 12 preferably is arranged in a portion of the gelatin film 11 to be subjected to suturing, and preferably is arranged along a periphery of the, gelatin film 11. The gelatin film 11 preferably is a cross-linked gelatin film, and the reinforcing material 12 preferably is a nonwoven fabric.

Abstract: An image forming apparatus is disclosed that is capable of making it simple to initialize a laser system thereof. The image forming apparatus includes a first photo detector that detects a part of a laser beam from each of the lasers and generates respective power adjustment signals for the lasers, a second photo detector that detects another part of the scanning laser beam of each of the lasers and generates a synchronization signal corresponding to each laser, and a power adjustment control unit that changes, the output power of each of the lasers to a predetermined value. During the adjustment of output powers of the lasers, the power of a laser is monitored by using the synchronization signal. The power adjustment control unit turns on a laser for power adjustment, and turns off the laser when the scanning synchronization signal is detected twice to complete the power adjustment of the laser, and then starts power adjustment of the next laser.

Abstract: A semiconductor device has an active region composed of a group III-V nitride semiconductor and ohmic electrodes and a gate electrode each formed on the active region. The active region has an entire surface thereof exposed to a plasma such that a surface potential for electrons therein is lower than in the case where the entire surface is not exposed to the plasma.

Abstract: A buffer layer, an undoped gallium nitride layer, and an n-type gallium nitride active layer are formed on a sapphire substrate. Ohmic contacts and a Schottky contact are then formed on the n-type gallium nitride active layer as a source contact, a drain contact and a gate contact, respectively. The Schottky contact is a copper alloy, such as palladium copper, in which the content by weight of copper is 5%.

Abstract: An active region formed of a Group III nitride semiconductor is formed on a substrate. Then, an electrode is formed on the active region and a protective insulating film is formed on a part of the active region located in the peripheral portion of the electrode by oxidizing the Group III nitride semiconductor.

Abstract: An optical writing apparatus including a semiconductor laser having plural light emitting elements and a single light-receiving element and plural semiconductor laser drive controlling devices. The plural light emitting elements in the semiconductor laser array are driven such that an optical writing operation at a same time per each of plural lines is performed. A commonly used LD drive controlling circuit drives the LD array. An output timing-determining device outputs a switch changing-over signal to either one of respective changing-over switches in a changing-over switch circuit. After an operational delay time of the changing-over switch elapses, an APC signal is output to an APC control section of the LD drive controlling circuit connected to a negative feedback loop formed by a changing-over operation of the changing-over switch circuit. After the completion of the APC operation, the outputting of the switch changing-over signal to the changing-over switch is stopped.

Abstract: A semiconductor device includes an insulating oxide layer formed by oxidizing a nitride semiconductor and an electrode formed of a conductive metal oxide on the insulating oxide layer.

Abstract: An insulating-gate semiconductor device has a first nitride semiconductor layer formed over a substrate and an insulating oxidation layer obtained by oxidizing a second nitride semiconductor layer formed on the first nitride semiconductor layer. A gate electrode is formed on the insulating oxidation layer.

Abstract: The semiconductor device of this invention includes an active region formed from a group III nitride semiconductor grown on a substrate and an insulating oxide film formed in a peripheral portion of the active region by oxidizing the group III nitride semiconductor. On the active region, a gate electrode in Schottky contact with the active region extending onto the insulating oxide film and having an extended portion on the insulating oxide film is formed, and ohmic electrodes respectively serving as a source electrode and a drain electrode are formed with space from side edges along the gate length direction of the gate electrode.

Abstract: A semiconductor device has a first semiconductor layer composed of a group III-V nitride, an oxide film formed by oxidizing a second semiconductor layer composed of a group III-V nitride to be located on the gate electrode formation region of the first semiconductor layer, an insulating film formed on the oxide film to have a composition different from the composition of the oxide film, and a gate electrode formed on the insulating film.

Abstract: A semiconductor device has an active region composed of a group III-V nitride semiconductor and ohmic electrodes and a gate electrode each formed on the active region. The active region has an entire surface thereof exposed to a plasma such that a surface potential for electrons therein is lower than in the case where the entire surface is not exposed to the plasma.

Abstract: An insulating-gate semiconductor device has a first nitride semiconductor layer formed over a substrate and an insulating oxidation layer obtained by oxidizing a second nitride semiconductor layer formed on the first nitride semiconductor layer. A gate electrode is formed on the insulating oxidation layer.

Abstract: The semiconductor device of the present invention includes: a gallium nitride (GaN) compound semiconductor layer; and a Schottky electrode formed on the GaN compound semiconductor layer, wherein the Schottky electrode contains silicon.

Abstract: The semiconductor device of the present invention includes: a gallium nitride (GaN) compound semiconductor layer; and a Schottky electrode formed on the GaN compound semiconductor layer, wherein the Schottky electrode contains silicon.

Abstract: An image forming apparatus shifts a scanning position on a surface scanned of each of a plurality of optical beams in a main scanning direction and a sub-scanning direction, and scans a plurality of lines simultaneously in the main scanning direction by a deflecting part. A synchronization detecting sensor detects the plurality of optical beams. A counting part counts a clock having a higher frequency than a dot clock in an interval between a synchronization detection point of a first beam and a synchronization detection point of a second beam, the first and second beams being included in the optical beams detected by the synchronization detecting sensor. A determining part determines a starting position of writing for each of the plurality of optical beams based on a counted value counted by the counting part.

Abstract: A magnetic resistance element is provided that includes an upper magnetic layer, which is formed in contact with an anti-ferromagnetic layer, and at least two magnetic layers that are layered with tunnel barrier wall layers respectively inserted between the first magnetic layer and each of the at least two magnetic layers such that the magnetic resistance element has a combined resistance that corresponds to one of four predefined magnetic resistances and that can be changed to another of the four predefined magnetic resistances by applying a predefined recording magnetic field pattern to the magnetic resistance element.

Abstract: A magnetic tunneling element in which the tunnel current flows reliably to exhibit a stable magnetic tunneling effect. The magnetic tunneling element includes a first magnetic layer, a tunnel barrier layer formed on the first magnetic layer, and a second magnetic layer formed on the tunnel barrier layer. The tunnel barrier layer is a metal film oxidized by inductively coupled oxygen plasma and a second magnetic layer is formed on the tunnel barrier layer.