Abstract: A semiconductor device has: a buffer layer formed on a conductive substrate and made of AlxGa1?xN with a high resistance; an element-forming layer formed on the buffer layer, having a channel layer, and made of undoped GaN and N-type AlyGa1?N; and a source electrode, a drain electrode and a gate electrode which are selectively formed on the element-forming layer. The source electrode is filled in a through hole provided in the buffer layer and the element-forming layer, and is thus electrically connected to the conductive substrate.

Abstract: An image forming apparatus includes a writing control unit that generates a writing clock based on a plurality of pixel clocks by adjusting a width of the writing clock in units of a width of a cycle of the pixel clock. The writing clock is then used to control emission of light from light-emitting elements when forming a latent image on a photosensitive member.

Abstract: A semiconductor device has an active region composed of a group III–V nitride semiconductor and ohmic electrodes and a gate electrode each formed on the active region. The active region has an entire surface thereof exposed to a plasma such that a surface potential for electrons therein is lower than in the case where the entire surface is not exposed to the plasma.

Abstract: A buffer layer, an undoped gallium nitride layer, and an n-type gallium nitride active layer are formed on a sapphire substrate. Ohmic contacts and a Schottky contact are then formed on the n-type gallium nitride active layer as a source contact, a drain contact and a gate contact, respectively. The Schottky contact is a copper alloy, such as palladium copper, in which the content by weight of copper is 5%.

Abstract: A semiconductor device has: a buffer layer formed on a conductive substrate and made of AlxGa1-xN with a high resistance; an element-forming layer formed on the buffer layer, having a channel layer, and made of undoped GaN and N-type AlyGa1-yN; and a source electrode, a drain electrode and a gate electrode which are selectively formed on the element-forming layer. The source electrode is filled in a through hole provided in the buffer layer and the element-forming layer, and is thus electrically connected to the conductive substrate.

Abstract: A semiconductor device has a first semiconductor layer composed of a group III–V nitride, an oxide film formed by oxidizing a second semiconductor layer composed of a group III–V nitride to be located on the gate electrode formation region of the first semiconductor layer, an insulating film formed on the oxide film to have a composition different from the composition of the oxide film, and a gate electrode formed on the insulating film.

Abstract: An image forming apparatus is disclosed that is capable of making it simple to initialize a laser system thereof. The image forming apparatus includes a first photo detector that detects a part of a laser beam from each of the lasers and generates respective power adjustment signals for the lasers, a second photo detector that detects another part of the scanning laser beam of each of the lasers and generates a synchronization signal corresponding to each laser, and a power adjustment control unit that changes the output power of each of the lasers to a predetermined value. During the adjustment of output powers of the lasers, the power of a laser is monitored by using the synchronization signal. The power adjustment control unit turns on a laser for power adjustment, and turns off the laser when the scanning synchronization signal is detected twice to complete the power adjustment of the laser, and then starts power adjustment of the next laser.

Abstract: An object of the present invention is to reduce the resistance of an electrode of a Group III nitride semiconductor. A thin Si film and a thin Ti film are formed selectively in a contact formation region on a surface of an AlGaN layer as a Group III nitride semiconductor layer formed on a substrate, and the resulting substrate is heat-treated at a high temperature. By the heat treatment, Si is diffused into the AlGaN layer in the ohmic contact formation region at a concentration of about 1020 cm3. Further, an electron density sufficiently high to provide an ohmic characteristic through a reaction between Si and Ti is provided. Thus, a low resistance TiSi2 portion resulting from the reaction between Si and Ti, a TiN portion resulting from a reaction between Ti and AlGaN and a Group III metal portion of Ga and Al devoid of nitrogen are formed in the contact formation region thereby to provide a low resistance electrode film mainly comprising TiSi2.

Abstract: In a method for fabricating a semiconductor device, a first semiconductor layer of aluminum gallium nitride is first formed on a substrate, and a protection film containing silicon is then formed on the first semiconductor layer in such a manner that a device-isolation region is uncovered. Thereafter, the method further includes the step of heat-treating the first semiconductor layer in an oxidizing atmosphere whose temperature is adjusted to be within a range of 950° C. or more and 1050° C. or less.

Abstract: An image forming apparatus shifts a scanning position on a surface scanned of each of a plurality of optical beams in a main scanning direction and a sub-scanning direction, and scans a plurality of lines simultaneously in the main scanning direction by a deflecting part. A synchronization detecting sensor detects the plurality of optical beams. A counting part counts a clock having a higher frequency than a dot clock in an interval between a synchronization detection point of a first beam and a synchronization detection point of a second beam, the first and second beams being included in the optical beams detected by the synchronization detecting sensor. A determining part determines a starting position of writing for each of the plurality of optical beams based on a counted value counted by the counting part.

Abstract: The semiconductor device of the present invention includes: a gallium nitride (GaN) compound semiconductor layer; and a Schottky electrode formed on the GaN compound semiconductor layer, wherein the Schottky electrode contains silicon.

Abstract: An image forming apparatus and an image forming method. The image forming apparatus includes a scanner mechanism for reading out image data from an original document, and a printer mechanism for printing an image based on the image data. The printer mechanism includes a first memory for writing in the image data in synchronization with a predetermined first clock signal, a first image processor for processing the image data in synchronization with a second clock signal, a second memory for writing in the image data in synchronization with the second clock signal, a second image processor for processing the image data in synchronization with a third clock signal, and a light controller for generating a light control signal from the image data in synchronization with the third clock signal.

Abstract: A semiconductor device includes an AlGaN film formed on a GaN film on a substrate, a gate electrode formed on the AlGaN film, and source and drain electrodes formed on either side of the gate electrode on the AlGaN film. An n-type InxGayAl1-x-yN film is interposed between the source and drain electrodes and the AlGaN film. Alternatively, the semiconductor device includes an n-type InxGayAl1-x-yN film formed on a GaN film on a substrate, a gate electrode formed on the InxGayAl1-x-yN film, and source and drain electrodes formed on either side of the gate electrode on the InxGayAl1-x-yN film.

Abstract: An image forming apparatus includes a data processing device to process image information. A latent image forming device forms an electrostatic first latent image on a surface of a photoconductive element based on image data processed by the data processing device and forms an electrostatic second latent image on the photoconductive element. A developing device develops the first and second electrostatic latent with toner. The first latent image is transferred from the surface of the photoconductive element to a transfer sheet, and the transfer sheet is separated from the surface of the photoconductive element by a separation pick. And, the second latent image has a pattern not produced in a portion of the surface of the photoconductive element that corresponds to the separation pick.

Abstract: A semiconductor device has: a buffer layer formed on a conductive substrate and made of AlxGa1-xN with a high resistance; an element-forming layer formed on the buffer layer, having a channel layer, and made of undoped GaN and N-type AlyGa1-yN; and a source electrode, a drain electrode and a gate electrode which are selectively formed on the element-forming layer. The source electrode is filled in a through hole provided in the buffer layer and the element-forming layer, and is thus electrically connected to the conductive substrate.

Abstract: A semiconductor device has a first semiconductor layer composed of a group III-V nitride, an oxide film formed by oxidizing a second semiconductor layer composed of a group III-V nitride to be located on the gate electrode formation region of the first semiconductor layer, an insulating film formed on the oxide film to have a composition different from the composition of the oxide film, and a gate electrode formed on the insulating film.

Abstract: A semiconductor device has a Group III nitride semiconductor layer and a gate electrode formed on the Group III nitride semiconductor layer. The gate electrode contains an adhesion enhancing element. A thermally oxidized insulating film is interposed between the Group III nitride semiconductor layer and the gate electrode.

Abstract: The semiconductor device of the present invention includes: a gallium nitride (GaN) compound semiconductor layer; and a Schottky electrode formed on the GaN compound semiconductor layer, wherein the Schottky electrode contains silicon.

Abstract: A semiconductor device has an active region composed of a group III-V nitride semiconductor and ohmic electrodes and a gate electrode each formed on the active region. The active region has an entire surface thereof exposed to a plasma such that a surface potential for electrons therein is lower than in the case where the entire surface is not exposed to the plasma.

Abstract: A semiconductor device includes an AlGaN film formed on a GaN film on a substrate, a gate electrode formed on the AlGaN film, and source and drain electrodes formed on either side of the gate electrode on the AlGaN film. An n-type InxGayAl1-x-yN film is interposed between the source and drain electrodes and the AlGaN film. Alternatively, the semiconductor device includes an n-type InxGayAl1-x-yN film formed on a GaN film on a substrate, a gate electrode formed on the InxGayAl1-x-yN film, and source and drain electrodes formed on either side of the gate electrode on the InxGayAl1-x-yN film.