Abstract: A method for manufacturing a memory includes the following operations. A substrate and a plurality of separate initial bit line contact structures are provided, in which a plurality of active regions are formed in the substrate, and each of the initial bit line contact structures is electrically connected with the active regions, and each of the initial bit line contact structures is partially located in the substrate. Pseudo-bit line structures on the tops of the initial bit line contact structures are formed. The initial bit line contact structures are etched to form bit line contact layers and gaps between the substrate and the side walls of the bit line contact layers. First dielectric layers are formed on the side walls of the pseudo-bit line structures, in which the first dielectric layers are also located right above the gaps.

Abstract: The present disclosure provides a coal bump control method for sectional hydraulic fracturing regions of a near vertical ultra thick coal seam. The method includes: deepening a main shaft from a mining level to a fracturing level; excavating a cross-hole from a roof rock layer of a coal seam at the fracturing level to enter a coal seam being mined, and excavating a roadway along the strike of the coal seam; and drilling hydraulic fracturing boreholes in a dedicated fracturing roadway along an inclination angle of the coal seam to the coal seam above the roadway, wherein the length of the borehole makes the borehole in communication with a goaf, and the spacing of the boreholes along the strike and the sectional spacing of the boreholes in an inclination direction are designed according to the parameters of fracturing equipments and the fracturing length.

Abstract: The present disclosure provides a memory block and its control method. The method includes: performing row-selection operation on at least a portion of at least one row of multiple rows of word lines in the memory block to select at least a portion of at least one row of memory cells; performing column-selection operation on at least one column of memory cells of at least one of multiple memory subarrays to select at least one memory cells to perform a memory operation.

Abstract: A semiconductor structure and a manufacturing method thereof are provided. The method includes: providing a substrate; forming, on the substrate, a first mask layer having a plurality of strip-shaped first patterns arranged in parallel; forming, on the first mask layer, a second mask layer having a plurality of strip-shaped second patterns arranged in parallel; forming, on the second mask layer, a third mask layer having a plurality of strip-shaped third patterns arranged in parallel, the second patterns overlap with the third patterns, and the second patterns and the third patterns are configured to sever the first patterns at predetermined positions; and performing layer-by-layer etching, using the first mask layer, the second mask layer, and the third mask layer as masks to transfer the first patterns, the second patterns, and the third patterns to the substrate to form an array of discrete active areas.

Abstract: A manufacturing method of a memory includes: providing a substrate and a bit line contact layer; forming a dummy bit line structure on top of the bit line contact layer; forming a spacer layer on the sidewall of both the dummy bit line structure and the bit line contact layer; forming a dielectric layer on the sidewall of the spacer layer; forming a sacrificial layer filling the area between adjacent dummy bit line structures, wherein the sacrificial layer covers the sidewall of the dielectric layer; after the sacrificial layer is formed, removing the dummy bit line structure; forming a bit line conductive portion which fills the hole and covers the bit line contact layer; and, after the bit line conductive portion is formed, removing the spacer layer.

Abstract: Provided are compounds useful for treating of cancer and methods for treating of cancer, comprising administering to a subject in need thereof a compound described therein.

Abstract: The present technology relates to an intelligent road infrastructure system and, more particularly, to systems and methods for a heterogeneous connected automated vehicle highway (CAVH) network in which the road network has various RSU and TCU/TCC coverages and functionalities. The heterogeneous CAVH network facilitates control and operations for vehicles of various automation level and other road users by implementing various levels of coordinated control among CAVH system entities and providing individual road users with detailed customized information and time-sensitive control instructions, and operations and maintenance services.

Abstract: An application of a hydrogel in the preparation of products for the treatment of bacterial infection is disclosed. Ferrous ion was used in the antibacterial activity test of Staphylococcus aureus and showed a strong bactericidal effect, which the survival rate of Staphylococcus aureus is less than 0.001%, as well as the survival rate of methicillin-resistant Staphylococcus aureus (MRSA) was less than 0.01%. Ferrous ion hydrogel was used for the treatment of keratitis and skin wound infection. Ferrous ion hydrogel for the treatment of keratitis and skin wound infection, which can significantly reduce the risk of pulmonary MRSA infection, prevented the dissimilation of MRSA to the lung, and alleviated systemic inflammation in the body in a timely and effective manner, revealing the therapeutic potential of ferrous compounds for treatment of Staphylococcus aureus infections, including MRSA.

Abstract: Photonically steered impedance surface antennas are disclosed. A disclosed example apparatus includes a semiconductor substrate to be communicatively coupled to a radio frequency (RF) source, an at least partially transparent dielectric layer, the semiconductor substrate at a first side of the at least partially transparent dielectric layer, an at least partially transparent conductive film at a second side of the at least partially transparent dielectric layer that is opposite the first side of the at least partially transparent dielectric layer, and an illumination source to illuminate at least a portion of the semiconductor substrate to generate a photoinduced solid-state plasma pattern that beam steers an RF signal corresponding to the RF source.

Abstract: A package-to-package communication system is provided including a first package having integrated on a first substrate a first antenna, a second antenna, and a first transceiver coupled to the first antenna and the second antenna. The first antenna is arranged along a first edge of the first substrate. The second antenna is arranged along a second edge of the first substrate. A second package having integrated on a second substrate a third antenna, a fourth antenna and a second transceiver coupled to the third antenna and the fourth antenna. The third antenna is arranged along a third edge of the second substrate. The fourth antenna is arranged along a fourth edge of the second substrate. The first antenna and the third antenna are configured to communicate signals of a vertical polarization. The second antenna and the fourth antenna are configured to communicate signals of a horizontal polarization.

Abstract: A communication system, including a first carrier and a first antenna mounted on the first carrier; a second carrier and a second antenna mounted on the second carrier, wherein the first antenna and the second antenna are arranged relative to each other that the first antenna and the second antenna can establish wireless link; a third carrier and a third antenna mounted on the third carrier; a fourth carrier and a fourth antenna mounted on the fourth carrier, wherein the third antenna and the fourth antenna are arranged relative to each other that the third antenna and the fourth antenna can establish wireless link; and a transmission structure, within which the signal propagate through, connects the second antenna and the third antenna.

Abstract: A displaying base plate and a manufacturing method thereof, and a displaying device. The displaying base plate includes a substrate, and a first electrode layer disposed on one side of the substrate, wherein the first electrode layer includes a first electrode pattern; a first planarization layer disposed on one side of the first electrode layer that is away from the substrate, wherein the first planarization layer is provided with a through hole, and the through hole penetrates the first planarization layer, to expose the first electrode pattern; and a second electrode layer, a second planarization layer and a third electrode layer that are disposed in stack on one side of the first planarization layer that is away from the substrate, wherein the second electrode layer is disposed closer to the substrate, the second electrode layer is connected to the first electrode pattern and the third electrode layer.

Abstract: A power converter comprises a chassis and an AC connector, a low-voltage DC connector and a high-voltage DC connector at an exterior surface of the chassis. An AC-DC converter circuit is positioned at least partially within the chassis and is coupled to the AC connector. A first converter circuit is positioned at least partially within the chassis and is coupled to the AC-DC converter circuit and to a high-voltage DC bus. The high-voltage DC bus is connected to the high-voltage DC connector. A second converter circuit is positioned at least partially within the chassis and is coupled to the high-voltage DC bus to a low-voltage DC bus. The low-voltage DC bus is connected to the low-voltage DC connector.

Abstract: Described herein is a method for preparing acesulfame potassium, comprising: pressing an acetoacetamide-N-sulfonic acid triethylamine salt solution and a cyclizing agent solution into a Venturireactor via different inlets, mixing same at a mixing section and a diffusion section of the Venturireactor, and then injecting the obtained mixture into a flow reactor, wherein the cyclizing agent solution is formed by dissolving sulfur trioxide in a first organic solvent; subjecting the mixture passing through the flow reactor to a sulfonation cyclization reaction under the action of a supported solid base heterogeneous catalyst preset in the flow reactor, and entering the obtained sulfonated cyclized product into a hydrolysis reactor; subjecting the sulfonated cyclized product and a hydrolysis agent preset in the hydrolysis reactor to a hydrolysis reaction to obtain a hydrolysis product solution; and adding potassium hydroxide into an organic phase of the hydrolysate solution for a salt-forming reaction to obtain the

Abstract: Described herein is a method for preparing acesulfame potassium, comprising: adding triethylamine to a sulfamic acid solution, and carrying out an amination reaction to produce a sulfamic acid ammonium salt solution; adding diketene to the obtained sulfamic acid ammonium salt solution, and under the action of a solid superacid catalyst, carrying out an acylation reaction to obtain an intermediate solution; dissolving sulfur trioxide in a solvent to form a cyclizing agent solution; adding the cyclizing agent solution to the intermediate solution, and carrying out a sulfonation cyclization reaction to obtain a cyclized product solution; adding a hydrolysis agent to the cyclized product solution, and carrying out a hydrolysis reaction to obtain a hydrolysis product solution; and adding a potassium hydroxide solution to the organic phase of the hydrolysis product solution to obtain acesulfame potassium.

Abstract: A device for removing iron from a nickel-cobalt-manganese sulfuric acid solution and a method for continuously removing iron ions from a nickel-cobalt-manganese sulfuric acid solution. The device has an iron removal reactor (2) having a stirrer (3) and an iron removal reactor inner cylinder (5) and an aging reactor (9) having an aging reactor stirrer (7) and an automatic stone powder feeder (8), a mixing feed pipe (12) and a carbonate solution feed pipe (4) are arranged in an interlayer between the iron removal reactor (2) and the iron removal reactor inner cylinder (5), a mixer (1) for a preheating the device is arranged at a top of the mixing feed pipe (12), a compressed air inlet (11) and a feed inlet (10) of a solution to be subjected to iron removal are arranged in the mixer (1). Further disclosed is a method for removing iron of the device.

Abstract: The present invention therefore pertains to a process for desulfurizing a sulfur compound-containing liquid fossil fuel. By continuously adding a solution comprising an oxidant to the sulfur compound-containing liquid fossil fuel, it is possible to improve oxidant utilization and achieve higher sulfur removal rate.

Abstract: A method for forming an active region array and a semiconductor structure are provided. The method for forming the active region array includes the steps of: providing a substrate; forming a first mask layer on a surface of the substrate, a first etched pattern being provided in the first mask layer; forming a second mask layer covering a surface of the first mask layer; forming a third mask layer having a second etched pattern on a surface of the second mask layer; forming a flank covering a sidewall of the second etched pattern; removing the third mask layer to form a third etched pattern between adjacent flanks; etching the first mask layer along the third etched pattern to form a fourth etched pattern in the first mask layer; and etching the substrate along the first etched pattern and the fourth etched pattern, to form multiple active regions in the substrate.

Abstract: A method for forming a storage node contact structure and semiconductor structure are provided. The method includes providing a substrate having a surface on which bit line structures are formed; forming a groove at a part, corresponding to an active region, of bottom of the contact hole; and growing a silicon crystal from the groove in the contact hole by using an epitaxial growth process, and controlling growth rates of the silicon crystal in a first and second directions in a growth process to enable the growth rate of the silicon crystal in the first direction to be greater than the growth rate of the silicon crystal in the second direction at beginning of growth and enable the growth rate of the silicon crystal in the first direction to be equal to the growth rate of the silicon crystal in the second direction at end of the growth.

Abstract: In various aspects, a device-to-device communication system is provided including a first device and a second device. Each of the first device and the second device includes an antenna, a radio frequency frond-end circuit, and a baseband circuit. Each of the first device and the second device are at least one of a chiplet or a package. The device-to-device communication system further includes a cover structure housing the first device and the second device. Each of the first device and the second device are at least one of a chiplet or a package. The device-to-device communication system further includes a radio frequency signal interface wirelessly communicatively coupling the first device and the second device. The radio frequency signal interface includes the first antenna and the second antenna.