Abstract: Systems, apparatuses and methods may provide technology for managing a runtime computing environment having tiered object memory placement that assigns a hotness score to an object having an object type based on an invocation count of objects referenced by a hot method, allocates a newly-created object to one of a hot object heap, said hot object heap assigned to store hot objects in a first memory tier, or a cold object heap, said cold object heap assigned to store cold objects in a second memory tier, based on the hotness score associated with the object type for the newly-created object, and migrates a plurality of objects between the hot object heap and the cold object heap based on a hotness score associated with each object. The technology may also operate the object migration in an execution thread independent of an execution thread for the object allocation.

Abstract: Described are conformation-specific antibodies or antigen-binding fragments that specifically bind to the trans conformation of phosphorylated-Threonine254-Proline (pThr254-Pro) of the p65 subunit of nuclear factor kappa-light-chain-enhancer of activated B cells (NF-?B). Also described are related pharmaceutical compositions, polynucleotides, peptides, vectors, host cells, methods of production, methods of treatment, diagnostic methods, and kits.

Abstract: A lens antenna system is disclosed. The lens antenna system comprises a hybrid focal source antenna circuit configured to generate a source antenna beam for integration with different lens structures. In some embodiments, the hybrid focal source antenna circuit comprises a set of antenna elements coupled to one another. In some embodiments, the set of antenna elements comprises a first antenna element configured to be excited in a first spherical mode; and a second antenna element configured to be excited in a second, different, spherical mode. In some embodiments, the first spherical mode and the second spherical mode are co-polarized. In some embodiments, the lens antenna system further comprises a lens configured to shape the source antenna beam associated with the hybrid focal source antenna circuit, in order to provide an output antenna beam.

Abstract: Methods and apparatus relating to phase heterogeneous interconnects for crosstalk reduction are described. In one embodiment, an interconnect includes a plurality of links. A first set of links from the plurality of links communicates signals and a second set of links from the plurality of links provides a return path. The interconnect also includes one or more links from the first set of links that include one or more structures with a larger diameter than a minimum diameter of the one or more links. The larger diameter modifies an inductance or capacitance of the one or more links to provide a heterogenous phase delay amongst the plurality of links. Other embodiments are also claimed and disclosed.

Abstract: An embodiment of a semiconductor package apparatus may include technology to pre-process an image to simplify a background of the image, and perform object detection on the pre-processed image with the simplified background. For example, an embodiment of a semiconductor package may include technology to pre-process an image to subtract the background from the image and perform object detection on the pre-processed image with the background subtracted. Other embodiments are disclosed and claimed.

Abstract: A method for forming a semiconductor structure can include the following steps. A substrate and an insulating layer that are stacked are provided, the substrate having a plurality of storage node contact structures spaced apart from each other. A grid-like upper electrode layer is formed on a surface of the insulating layer, where the upper electrode layer has a plurality of meshes penetrating the upper electrode layer, and an orthographic projection of each of the meshes on the insulating layer and an orthographic projection of a storage node contact structure on the insulating layer have an overlapping area. A dielectric layer is formed on a side wall of each mesh. The insulating layer exposed from the mesh is removed to expose the storage node contact structure. A lower electrode layer is formed inside each mesh.

Abstract: Techniques for radiofrequency (RF) touch and gesture recognition are disclosed. In the illustrative embodiment, RF transmitters and receivers are connected to data lines and gate lines of a display. RF signals sent on one data or gate line may be scattered to a different data or gate line based on the presence of a nearby object, such as a finger. The amount of scattering on different data or gate lines can be used to determine a location of one or more objects.

Abstract: The application relates to an electrode layer, a capacitor and methods for electrode layer and capacitor manufacture. The method for electrode layer manufacture comprises the following steps: forming a first electrode layer, the first electrode layer comprising a doped Titanium Nitride (TiN) layer; and forming a second electrode layer on the surface of the first electrode layer, the second electrode layer comprising a TiN layer or a work function layer.

Abstract: An embodiment of a semiconductor package apparatus may include technology to pre-process an image to simplify a background of the image, and perform object detection on the pre-processed image with the simplified background. For example, an embodiment of a semiconductor package may include technology to pre-process an image to subtract the background from the image and perform object detection on the pre-processed image with the background subtracted. Other embodiments are disclosed and claimed.

Abstract: Provided is a method for forming a storage node contact structure and a semiconductor structure. The method for forming a storage node contact structure comprises: providing a substrate, bit line structures being formed on a surface of the substrate and contact holes being formed between the bit line structures; and growing silicon crystal in the contact holes and adding a doping source in a growth process, in which a doping concentration of the doping source when the growth is over is greater than a doping concentration when the growth is started so as to form silicon crystal gradual change structures in the contact holes, in which the silicon crystal changes from monocrystalline silicon to heavily doped polycrystalline silicon.

Abstract: A package substrate may include a circuit and a leaky surface wave launcher. The circuit may perform engineering tests and end-user operations using sideband signals. The leaky surface wave launcher may perform near field wireless communication. The leaky surface wave launcher may include a via and a strip line. The via may be electrically coupled to the circuit. The via may provide the sideband signals to and receive the sideband signals from the circuit. The strip line may be electrically coupled to the via. The strip line may be excited by the sideband signals to wirelessly couple the leaky surface wave launcher with an external device. The strip line and the via may be unbalanced such that the strip line generates a leaky wave that propagates at least a portion of the package substrate and an environment proximate the package substrate.

Abstract: A method for forming a storage node contact structure and semiconductor structure are provided. The method includes providing a substrate having a surface on which bit line structures are formed; forming a groove at a part, corresponding to an active region, of bottom of the contact hole; and growing a silicon crystal from the groove in the contact hole by using an epitaxial growth process, and controlling growth rates of the silicon crystal in a first and second directions in a growth process to enable the growth rate of the silicon crystal in the first direction to be greater than the growth rate of the silicon crystal in the second direction at beginning of growth and enable the growth rate of the silicon crystal in the first direction to be equal to the growth rate of the silicon crystal in the second direction at end of the growth.

Abstract: The present application provides a detection method of metal impurity in wafer. The method comprises conducting a medium temperature thermal treatment for a first predicted time period to the wafer, cooling the wafer and conducting a low temperature thermal treatment for a second predicted time period, cooling the wafer to ambient temperature; providing a liquid of vapor phase decomposition on the wafer to collect metal impurities; atomizing the liquid containing the collected metal impurities, conducting an inductively coupled plasma mass spectrometry analysis and obtaining concentrations of the metal impurities. The present application applies the combination of various thermal treatment without an interrupt of cooling to ambient temperature to contemplate diffusions of various metal impurities to the wafer surface. Accordingly, the detection of metal impurities can be conducted with reduced time cost and enhanced efficiency.

Abstract: A radar device may include a digital to analog converter (DAC) stage. The DAC stage may generate a plurality of analog signals. The DAC stage may generate a different analog signal for each transmitter chain of a plurality of transmitter chains. Each analog signal of the plurality of analog signals may represent a single digital signal. Each transmitter chain of the plurality of transmitter chains may include a transmit chain portion and switched analog beamforming network (BFN). The transmit chain portion may generate a plurality of intermediate analog signals representative of the corresponding analog signal. The switched analog BFN may generate a plurality of analog transmit signals for an intermediate analog signal of the plurality of intermediate analog signals. The plurality of analog transmit signals may include a beam formed in accordance with a state of the switched analog BFN.

Abstract: In various aspects, a package system includes at least a first package and a second package arranged on a same side of the package carrier. Each of the first package and the second package comprises an antenna to transmit and/or receive radio frequency signals. A cover may be arranged at a distance over the first package and the second package at the same side of the package carrier as the first package and the second package. The cover comprises at least one conductive element forming a predefined pattern on a side of the cover facing the first package and the second package. The predefined pattern is configured as a frequency selective surface. The package system further includes a radio frequency signal interface wirelessly connecting the antennas of the first package and the second package. The radio frequency signal interface comprises the at least one conductive element.

Abstract: The present invention provides a use for a small nucleolar RNA (snoRNA) or a detection reagent thereof, for use in detection of a servitization state of cells; moreover, detection and regulating methods for the snoRNA are established.

Abstract: Techniques are provided for the scheduling of file pre-fetches from a file system into a cache memory, to reduce subsequent latency associated with future accesses to those files. A methodology implementing the techniques according to an embodiment includes monitoring accesses to files of the file system (e.g., file open and file read operations) and maintaining a record for each of the accessed files. The record includes an identifier of the file, the number of accesses of the file, and the number of cache memory misses associated with those accesses. The method also includes storing the record into a file access history database (FAHD). The method further includes generating, in response to an Operating System (OS) shutdown, a frequently used file list (FUFL) based on the FAHD. The method further includes pre-fetching files identified by a selected subset of the FUFL to the cache memory during an OS boot.

Abstract: The present application provides a temperature detection system and an on board charger, the system including a heat transfer element and a temperature sensor; the heat transfer element and the temperature sensor are both located on a printed circuit board. The heat transfer element is thermally connected to the temperature sensor, and is also configured to thermally connect to the power device on the printed circuit board. The heat transfer element is configured to transfer a temperature of the power device to the temperature sensor, so that the temperature sensor detects the temperature of the power device. The heat transfer element is an electrically insulating element. The heat transfer element is thermally connected to the power device and temperature sensor.

Abstract: Systems, apparatuses and methods may provide for technology that detects a creation of a thread, dedicates a memory region to objects associated with the thread, and conducts a reclamation of the memory region in response to a termination of the thread. In one example, the memory region is a heap region and the reclamation bypasses at least a pause phase and a copy phase of a garbage collection process with respect to the heap region.

Abstract: Method, systems and apparatuses may provide for technology that divides an application into a plurality of portions that are each associated with one or more functions of the application and determine a plurality of transition probabilities between the plurality of portions. Some technology may also receive at least a first portion of the plurality of portions, and receive a relation file indicating the plurality of transition probabilities between the plurality of portions.