SPECTRAL OPTICAL SENSOR AND METHOD FOR PRODUCING AN OPTICAL SPECTRAL SENSOR
The invention relates to an optical spectral sensor for determining the spectral information of incident light, in particular in the visible and infrared spectral range, with at least one optoelectronic semiconductor arrangement and at least one metal film, which is surrounded by a dielectric, wherein the metal film has a periodic pattern, wherein the at least one optoelectronic semiconductor arrangement and the at least one patterned metal film are arranged in such a way that light to be detected initially passes through the patterned metal film and then impinges on the optoelectronic semiconductor arrangement, wherein the optical spectral sensor is formed in such a way that the spectral sensitivity is determined essentially by the optical properties of the patterned metal film.
The invention relates to a spectral optical sensor, to a spectrometer, which incorporates said spectral optical sensor, to the use of said spectral optical sensor for spectroscopy and to a method for producing a spectral optical sensor. The invention further relates to a spectral sensor for detecting spectral information and/or polarizations with several of the spectral optical sensors and to a method of manufacturing said spectral sensor for detecting spectral information and/or polarizations with several of the spectral optical sensors.
Known spectral optical sensors comprise a sensor element and an optical absorption filter, incident light being filtered by said absorption filter and filtered light being detected by the sensor element. As a result, color-resolved light detection is made possible. The spectral sensitivity of the sensor elements may be influenced by varying the absorption properties of the absorption filter.
The disadvantage of these known optical sensors is that each filter of such an arrangement must be manufactured separately. Further, absorption filters can only be made with certain optical properties. Narrow-band optical filters for example cannot be manufactured.
Optical sensors are further known, which consist of a sensor element and of a diffraction grating. If the gap width of a diffraction grating is less than λ/2/n, wherein λ is the wavelength of incident light and n the index of refraction in the gap area, a diffraction grating behaves like an edge filter. In this case, the diffraction grating allows passage of light having a wavelength of less than 2·d·n, wherein d is the gap width of the diffraction grating, whereas light having a wavelength of more than 2·d·n is not allowed to pass through the diffraction grating. Consequently, the diffraction grating behaves like an optical edge filter. Detection of a given wavelength range is only possible if several diffraction gratings are being combined. Accordingly, the manufacturing of color sensors, multi-spectral sensors or spectrometers calls for combining several spectral optical sensors having different diffraction gratings.
Image sensors are further known. The U.S. Patent Application US2003/0103150 (Catrysse et al.) describes solutions for detecting a color by means of image sensors. One uses therefor patterned metal films for optical filtration of incident light. This light is converted into an electric signal by means of a detector. Next, this signal serves for reproducing the color for imaging purposes.
It is the object of the present invention to provide a spectral optical sensor, a method of manufacturing a spectral optical sensor, the use of a spectral optical sensor and a spectrometer for detecting various spectral information and/or polarizations.
Further, the spectral components of light to be detected should be analyzable by means of a spectral optical sensor.
The solution to this object is achieved by means of a spectral optical sensor for determining the spectral information with at least one optoelectronic semiconductor arrangement and at least one metal film, which is surrounded by a dielectric, wherein the metal film has a periodic pattern, wherein the at least one optoelectronic semiconductor arrangement and the at least one patterned metal film are arranged in such a way that light to be detected initially passes through the patterned metal film and then impinges on the optoelectronic semiconductor arrangement, wherein the spectral optical sensor is formed in such a way that the spectral sensitivity is determined essentially by the optical properties of the patterned metal film.
The optoelectronic semiconductor arrangement may either be determined by the optical properties of the patterned metal film only or other properties of the spectral optical sensor, beside the optical properties of the patterned metal film, may also contribute to the spectral sensitivity of the semiconductor arrangement. Further, the optical properties of the patterned metal film, which, together with the surrounding dielectric, may be referred to as a photonic crystal, may be determined by the formation of surface plasmons only, or other features of the spectral optical sensor, beside the formation of surface plasmons, may contribute to the optical properties of the photonic crystal. The spectral sensitivity is for example an electric signal which is tapped at the semiconductor arrangement and which is used as the detector signal of incident light.
In a preferred embodiment, the spectral optical sensor comprises several patterned metal films disposed one behind the other. Consecutive patterned metal films are substantially evenly spaced by the dielectric and a filter characteristic may be allocated to each patterned metal film. The light to be detected passes first through the metal films disposed one behind the other and is reflected therefrom to then impinge on the optoelectronic semiconductor arrangement.
It is preferred that electrodes are associated with the optoelectronic semiconductor arrangement, at least one of the electrodes being a component part of the patterned metal film. The at least one of the electrodes thus performs a double function. On the one side, it is associated with the optoelectronic semiconductor arrangement, and on the other side it forms a constituent part of the patterned metal or of the photonic crystal. This allows for more compact and simpler structure of the spectral optical sensor. This further has the advantage that, if several such type spectral optical sensors are disposed in a side-by-side relationship, the probability of what is referred to as Pixel Cross Talk is reduced since the distance between the optoelectronic semiconductor arrangement and the photonic crystal is minimized by virtue of this arrangement.
It is further preferred that the at least one of the electrodes forms a metallic photonic crystal together with the semiconductor layers which surround the at least one of the electrodes. Through such an arrangement, the spectral optical sensor can be made even more compact and smaller. In particular, such an arrangement, in which the semiconductor and metal layers form both part of the metallic photonic crystal (patterned metal films) and of the optoelectronic semiconductor arrangement, can be manufactured in one manufacturing process.
It is preferred that the at least one optoelectronic semiconductor arrangement forms a diode arrangement or a CCD device. Such an optoelectronic semiconductor arrangement can be readily manufactured using known semiconductor technologies, which are used for example to manufacture CCDs (Charge Coupled Devices) or CMOS (Complementary Metal Oxide Semiconductor) sensors.
According to another preferred embodiment, the at least one of the patterned metal films comprises holes and/or slots and/or depressions and/or nanodots. More specifically, the depressions are trenches. The formation of holes and/or slots and/or depressions and/or nanodots allows for purposefully adjusting the optical properties of the particularly metallic photonic crystal and to adapt them to certain requirements.
It is preferred that the holes and/or slots and/or depressions and/or nanodots are made using a lithographic method. With a lithographic method, the holes and/or slots and/or depressions and/or nanodots can be made very precisely, in a simple way and at low cost.
It is further preferred that the optical properties of the at least one photonic crystal are configured such that optical diffraction of the light of a given spectral range passing through the at least one photonic crystal does not substantially influence the optical properties of the photonic crystal. Accordingly, an in particular metallic photonic crystal behaves similar to an optical band-pass filter, whereas a diffraction-limited pattern behaves like an optical edge filter.
It is further preferred that the at least one photonic crystal is dimensioned such that the spectral optical sensor has a given spectral sensitivity. With a photonic crystal having such dimensions only certain spectral portions are detected by the optoelectronic semiconductor arrangement so that the spectral optical sensor only detects light of given wavelengths. This makes it possible to utilize the spectral optical sensor as an optical spectrometer or as a color sensor for example.
It is further preferred that the at least one photonic crystal is dimensioned such that the spectral optical sensor has a given polarization sensitivity. Such a configuration of the photonic crystal makes it possible to provide a spectral optical sensor that only detects light having a given polarization. The spectral optical sensor may therefore act as a polarization sensor.
According to another preferred embodiment, the spectral optical sensor is manufactured using a CCD, a CMOS (Complementary Metal Oxide Semiconductor) and/or a BiCMOS (Bipolar Complementary Metal Oxide Semiconductor) method.
These methods are known, mature and easy to carry out so that the spectral optical sensor is easy to manufacture.
It is further preferred that several patterned metal films are arranged proximate to each other, in particular one above the other, in such a manner that light to be detected passes first through the photonic crystals arranged proximate to each other, in particular one above the other, and then impinges on the optoelectronic semiconductor arrangement. Since each patterned metal film transmits or reflects light of a given spectral range and/or of a given polarization range, spectral optical sensors having any predetermined spectral sensitivity and/or polarization sensitivity may be manufactured by combining several such type photonic crystals.
It is further preferred that the spectral optical sensor comprises dielectric adaptation layers to adapt the spectral optical sensor to light to be detected. Through the adaptation layers, light to be detected is in particular better coupled into the photonic crystal. The dielectric adaptation layers may further be configured such that incident light, which is not to be detected by said spectral optical sensor, will not enter the photonic crystal. Through such type dielectric adaptation layers, the spectral sensitivity and/or polarization sensitivity of the spectral optical sensor can be further improved. As a result, a given spectral sensitivity may be achieved.
The object mentioned herein above is further achieved by a method of manufacturing a spectral optical sensor having at least one optoelectronic semiconductor arrangement and at least one patterned metal film, wherein the at least one optoelectronic semiconductor arrangement and the at least one patterned metal film are arranged such that light to be detected passes first through the patterned metal film or is reflected therefrom and then impinges on the optoelectronic semiconductor arrangement, and at least one patterned metal film is additionally configured to be an electrode and wherein said spectral optical sensor is configured such that the spectral sensitivity is essentially determined by the optical properties of the patterned metal film.
Preferably, at least one photonic crystal is provided with holes and/or slots and/or depressions and/or nanodots in order to set the optical properties of the photonic crystal and, as a result thereof, of the spectral optical sensor.
The holes and/or slots and/or depressions and/or nanodots are preferably made using a lithographic method. The spectral optical sensor is further preferably made using a CCD, a CMOS and/or a BiCMOS method. These methods are mature, reliable, easy and at low cost to perform.
The invention is further achieved by a spectral sensor for detecting spectral information and/or polarizations with a plurality of spectral optical sensors of the invention, at least some spectral optical sensors of said plurality of spectral optical sensors having different spectral sensitivity and/or polarization sensitivity. Using said plurality of spectral optical sensors, it is possible to manufacture a spectral sensor that reliably detects different spectral ranges and/or polarizations of incident light and may be utilized more readily than known spectral sensors for detecting different spectral ranges by virtue of the band-pass filter properties of the in particular metallic photonic crystal.
It is preferred that the spectral optical sensors of the plurality of spectral optical sensors having different spectral sensitivity and/or polarization sensitivity are made in one manufacturing process. The manufacturing of the spectral optical sensors in one semiconductor manufacturing process simplifies the manufacturing of the spectral sensors for detecting different spectral ranges and/or polarization conditions.
The plurality of spectral optical sensors preferably forms an arrangement that may be used as the optical spectrometer. Further, the spectral optical sensors of the plurality of spectral optical sensors are preferably combined to form a color sensor, several color sensors being preferably combined to form a one- or a two-dimensional arrangement in order to form a Line sensor or an image sensor. Using spectral optical sensors of the invention, such type arrangements and such type color sensors as optical spectrometers or image sensors may be simply realized at low cost. Further, the spectral sensitivity is improved over known arrangements and color sensors by virtue of the band-pass filter properties of the photonic crystals. Moreover, the polarization sensitivity of the spectral sensor can be set purposefully.
The object mentioned herein above is additionally achieved with a method of manufacturing a spectral sensor for detecting different spectral ranges, wherein a plurality of spectral optical sensors of the invention are combined, at least some spectral optical sensors of said plurality of spectral optical sensors having different spectral sensitivities and/or polarization sensitivities. It is preferred that said spectral optical sensors of said plurality of spectral optical sensors having different spectral sensitivities and/or polarization sensitivities are made in a semiconductor manufacturing process.
Embodiments of the present invention will be described herein after with reference to a drawing. In said drawing:
The photonic crystal has a periodic pattern 2a and a dielectric medium 2b. In this embodiment, the periodic pattern is formed by a metal film 2a that is shown schematically in a top view in
The metal film 2a illustrated in the
The optical properties of the photonic crystal can be purposefully set through the shape of the holes, the diameter of the holes, the thickness of the metal film and the arrangement of the holes. Further, the optical properties of the metallic photonic crystal are determined by the complex index of refraction of the dielectric medium 2b, which surrounds the metal film. The dielectric material may for example be air, silicon oxide and/or silicon nitride, as already mentioned herein above. Further, the optical properties of the photonic crystal are influenced by the complex index of refraction of the metal, a preferred choice for the metal being aluminum, copper or gold.
Since the light 6 strikes the photonic crystal 2a, 2b, surface plasmons, which influence the transmission of incident light 6 through the photonic crystal 2a, 2b, form in proximity to the surface of the metal film 2a.
In the
How the transmission of incident light is influenced by the properties of the photonic crystal 2 will now be described by way of example with reference to
From
wherein i and j represent the modes of the light. Further, ε1 designates the dielectric constant of the metal and ε2, the dielectric constant of the dielectric material.
Surface plasmons only form in materials with negative permittivity. Negative permittivity only occurs for metallic and metal oxide films. A preferred choice for metals with negative permittivity is gold, silver, copper and aluminum.
Rather than holes, the photonic crystal can also comprise other periodic patterns such as slots or depressions, in particular trenches or nanodots, which may be elongate in shape.
The metal film has a preferred thickness c of 200 nm. The preferred diameter b of the holes is 250 nm. By varying the diameter of the holes, the spectral range in which the surface plasmons form can be shifted. The transmission peaks shift for example to shorter wavelengths as the diameter of the holes decreases. The reverse occurs as the diameter of the holes increases. The transmission peaks shift to longer wavelengths as the diameter increases.
The comments referring to
Beside the use of individual metal layers 2a with holes, more complex patterns can be utilized to influence the wave propagation of incident light. A photonic crystal 102 having a more complex pattern is illustrated in a schematic side view in the
The photonic crystal 102 comprises several metal films 109 disposed behind each other in the direction of irradiation. Each of these metal films 109 has a periodic pattern, in particular a periodic hole pattern. Each metal film 109 can be sized differently so that each metal film 109 influences differently the incident light 6.
Since each metal film 109 is surrounded by the dielectric, each of said metal films 109 can be considered a discrete photonic crystal. In this sense,
The photonic crystal can be made in particular by means of optical lithography, which is also utilized for manufacturing micro- and nanoelectronic integrated semiconductor circuits. Accordingly, the metallic photonic crystals can be readily combined with optoelectronic components such as diodes. The diode is an optoelectric semiconductor arrangement, by means of which the light transmitted through the photonic crystal can be detected. With a spectral optical sensor comprising a combination consisting of a photonic crystal and of a diode arrangement
as the optoelectronic semiconductor arrangement, the spectral sensitivity of the spectral optical sensor can be set purposefully. Such type spectral optical sensors can be utilized for example in high-resolution image sensors, color sensors, multi-spectral sensors or spectrometers. Such a spectral optical sensor, which comprises a combination of a photonic crystal and of a diode arrangement as the optoelectronic semiconductor arrangement, is illustrated in the
Incident light 206 passes through the metal films 209, which comprise a periodic pattern, in particular a periodic hole pattern. In the metal films 209, which are surrounded by the dielectric medium 211, surface plasmons are excited to form by virtue of incident light 206. The light, which is influenced by the surface plasmons which are forming, finally falls on the optoelectronic semiconductor arrangement 203 and in particular on the transition between the n-doped range 214 and the p-doped range 215. In the transition range, charge carriers forming a photocurrent are generated in a known way, said photocurrent being tapped in a known way by means of the electrodes 216, 217. The corresponding electric signals are transmitted to the evaluation unit 4 for evaluation.
The holes in the metal films 209 are preferably significantly smaller than the wavelength of the light to be detected. Since visible light in particular is to be detected by the spectral optical sensor 201, the diameter of the holes is preferably significantly smaller than the wavelength of visible light. The diameter of the holes in the metal film is preferably smaller than λ/2/n, wherein λ is the wavelength of incident light 206 and n the index of refraction of the dielectric medium 211. Assuming that the visible spectral range to be detected comprises a wavelength range of 380 nm to 680 nm, one obtains a hole diameter of the metal films 209 that is smaller than 130 nm if the index of refraction is n=1.5 (index of refraction of silicon oxide). The transmission obtained with such type metal films 209, which are surrounded by the dielectric medium, is only influenced by surface plasmons in the above mentioned visible wavelength range (see
The spectral optical sensor 301 comprises a metal film 309 that is provided with a periodic hole pattern (hole array) and that is surrounded by a dielectric medium 311. Further, said spectral optical sensor 301 comprises an optoelectronic semiconductor arrangement 303 incorporating an n-doped range 314 and a p-doped range 315. The n-doped range 314 and the p-doped range 315 are arranged such that the n-doped range 314 is disposed first and the p-doped range 315 behind in the direction of incident light 306.
The transition between the n-doped range 314 and the p-doped range 315 forms, as already described herein above, a diode arrangement that is used as a photodiode. The electric signals of the optoelectronic semiconductor arrangement 303, that is, of the photodiode, are tapped by means of electrodes 316, 317. The electrode 316 is disposed on the p-doped range 315 of the optoelectronic semiconductor arrangement 303. The electrode 317 is formed by the metal film 309 that is disposed directly on the n-doped range 314 of the optoelectronic semiconductor arrangement 303.
The p-doped range 315 preferably forms a block, in particular a cuboid block, which has a well-like depression in which there is disposed the n-doped range 314. The electrode 316 is preferably disposed on the edge of the well-like p-doped range 315 that is turned toward incident light.
The metal film 309 performs a double function. On the one side, it serves to control the propagation of incident light. On the other side, the metal film 309 serves as an electrode 317 for the diode arrangement. This combination of several functions simplifies the structure of the spectral optical sensor 301. Moreover, the spacing between the optoelectronic semiconductor arrangement 303 and the photonic crystal 302, which is formed by the metal film 309 and by the dielectric medium 311 surrounding the metal film 309, is minimized. As a result, what is referred to as Pixel Cross Talk, which occurs with conventional spectral optical sensors, is prevented.
Photonic crystals of the invention can be manufactured by means of classical silicon semiconductor technologies. This includes for example semiconductor processes, which are used to manufacture CCDs or CMOS sensors.
The n+ well is preferably a highly phosphorus- or arsenic doped well. The n− well is preferably a low phosphorus- or arsenic doped well. The p+ well is preferably a low boron-doped well. Further, PROT1 in
As compared to the manufacturing of the conventional sensor 401, the manufacturing of the spectral optical sensor 501 of the invention needs no additional method step so that known semiconductor methods can be made use of to manufacture the photonic crystal of the invention. Thus, the metallic periodic patterns can be made together with the metallic bond lines of an integrated semiconductor circuit. The metallic bonds of the various components are hereby standard elements of each semiconductor process. The metal bonds are structured by means of optical lithography. It is possible to manufacture the periodic metallic patterns in the same work step.
The optoelectronic semiconductor arrangement preferably comprises silicon, but it can comprise, instead or additionally, germanium, gallium arsenide, gallium nitride, indium phosphate or amorphous silicon.
If, as shown in
For the spectral optical sensors 1a, 1b, 1c to comprise different polarization sensitivities, the holes of the metal films of the different spectral optical sensors 1a, 1b, 1c can have different shapes. Transmission through a photonic crystal for example is dependent on polarization if the holes have no circular cross section but a rectangular one, the two sides of the rectangle having different lengths. The lengths of the sides of the rectangle, which forms the cross section of the respective hole, can be selected for light of an imposed polarization to pass the photonic crystals. These lengths can be adapted to desired polarization-dependent transmissions through calibration for example.
By means of known semiconductor manufacturing methods, such as by means of photolithographic methods, spectral optical sensors having different wavelengths and/or polarization sensitivities can be manufactured. This allows for simple and easy manufacturing of color sensors for example. Known color sensors by contrast use absorption filters, every single filter for red, green and blue having to be applied separately, which leads to the complex manufacturing process of conventional color sensors. This advantage of the invention is even more obvious in the field of multi-spectral technique, which deals with the most precise possible detection of the optical spectrum of incident light. Usually, a plurality of sensor channels, that is to say of spectral optical sensors, is needed hereby. The integration of this plurality of spectral optical sensors comprising different absorption filters is very complex and expensive. By means of conventional semiconductor manufacturing methods, spectral sensors for detecting different wavelengths and/or polarizations comprising several spectral optical sensors can be manufactured in one manufacturing process, which simplifies the manufacturing of such type spectral sensors, in particular in the field of multi-spectral technique.
What matters for the manufacturing of the spectral sensors is the manufacturing of the different metallic photonic crystals. As already illustrated in the
As already mentioned herein above, optical filters are used on known spectral optical sensors in order to generate desired wavelength selectivity, said filters being spaced some micrometers apart from the actual optoelectronic semiconductor arrangement. If such type spectral optical sensors are now disposed in a line or in planar fashion, what is referred to as Pixel Cross Talk occurs due to the quite large spacing between the respective optical filter and the spectral optical sensor. This means that light passing a certain optical filter will not strike or not only strike the associated optoelectronic semiconductor arrangement but the optoelectronic semiconductor arrangement of the neighboring spectral optical sensor. As a result, the spatial resolution of known line sensors and image sensors is reduced. In accordance with the invention, the spacing between the photonic crystal and the optoelectronic semiconductor arrangement can be reduced so that the Pixel Cross Talk is strongly reduced over known line sensors and image sensors. Further, the metal film of the photonic crystal can be disposed directly on the optoelectronic semiconductor arrangement so that Pixel Cross Talk is even completely prevented as a result thereof.
Further, as already described herein above, known line sensors and image sensors use absorption filters in order to selectively detect light wavelengths. However, as compared to photonic crystals, the properties of such absorption filters can only be set in a certain range, narrow-band absorption filters for example can only be manufactured at very great expense. The optical properties of photonic crystals by contrast can be set purposefully and simply, as described herein above.
Although a component part of the photonic crystal has been referred to as a metal film, the invention is not limited to certain metal film thicknesses. The metal film may also have a thickness greater or smaller than the 200 nm mentioned herein above.
The amplifiers and evaluation units mentioned in the specification process the electric signals received by the spectral optical sensors of the invention in a known way so that the respective color and/or intensity and/or location and/or polarization information can be passed to an output unit.
Beside the use of optical lithography, the metal films can also be patterned by means of focused ion beams for example. Holes having a diameter of less than 100 nm can be made by means of focused ion beams, the metal films being preferably thicker than 100 nm.
The adaptation of spectral optical sensors to desired optical properties is not limited to the adaptation of the above mentioned features of the spectral optical sensor, such as the hole diameter of the photonic crystal or the index of refraction of the dielectric. In accordance with the invention, each feature of the spectral optical sensor which contributes to the optical properties of the spectral optical sensor can be configured such that the spectral optical sensor comprises desired optical properties.
The spectral sensitivity of the spectral sensors can be set purposefully substantially by varying the size, the shape and the arrangement of the holes and/or depressions and/or slots, and/or nanodots.
This allows for realizing color sensors consisting of three spectral sensors. The objective is to reproduce human color perception. Human color perception is described by the normalized spectral curves.
Now, the goal of the development or of the optimization of a color sensor is to reproduce these normalized spectral curves. On the one side, this occurs by adapting the spectral sensitivity of the spectral sensors. Moreover, mathematical methods (color processing) can also be utilized to improve the color signals.
A line sensor or image sensor now consists of a plurality of such color sensors. The spectral resolution of a color sensor is however not sufficient for a plurality of applications. For example to control paints in the automotive industry or to control products in the printing industry. Spectrometers are utilized therefor. Further, such spectrometers can be utilized to monitor the degree of ripeness or the decay of fruit or to detect skin cancer. Existing spectrometer solutions however are often too expensive to manufacture. The approach proposed herein allows for a very low-cost manufacturing of spectrometers.
By varying the nano-patterned metal film of the spectral sensors, the complete optical spectrum can be scanned with high spectral resolution. For this purpose, 15-20 spectral sensors are needed, depending on the spectral sensitivity of the sensors.
The sensor signals can be processed like with an image sensor. The color aberration of the thus obtained color signals RGB is however much lower.
Claims
1. A spectral optical sensor for determining spectral information of incident light, in particular in the visible and infrared spectral range having at least one optoelectronic semiconductor arrangement and at least one metal film, which is surrounded by a dielectric, said metal film comprising a periodic pattern, wherein the at least one optoelectronic semiconductor arrangement and the at least one patterned metal film are arranged in such a way that light to be detected first passes the patterned metal film and then impinges on the optoelectronic semiconductor arrangement, said spectral optical sensor being configured such that the spectral sensitivity is essentially determined by the optical properties of the patterned metal film.
2. The spectral optical sensor as set forth in claim 1, wherein several patterned metal films are disposed one after the other in such a manner that consecutive patterned metal films are substantially evenly spaced by the dielectric and that light to be detected first passes through the metal films disposed one behind the other or is reflected therefrom and then impinges on the optoelectronic semiconductor arrangement.
3. The spectral optical sensor as set forth in claim 1, wherein electrodes are associated with the optoelectronic semiconductor arrangement, at least one of the electrodes being a constituent part of at least one patterned metal film.
4. The spectral optical sensor as set forth in claim 1, wherein the at least one optoelectronic semiconductor arrangement forms a diode arrangement or a CCD device.
5. The spectral optical sensor as set forth in claim 1, wherein the patterned metal film comprises holes and/or slots and/or depressions and/or nanodots.
6. The spectral optical sensor as set forth in claim 5, wherein the holes and/or slots and/or depressions and/or nanodots are made using a lithographic method.
7. The spectral optical sensor as set forth in claim 1, wherein the optical properties of the patterned metal film are configured such that optical diffraction of the light of a given wavelength range passing through the patterned metal film does not substantially influence the optical properties of the patterned metal film.
8. The spectral optical sensor as set forth in claim 1, wherein the patterned metal film is configured such that the spectral optical sensor has a given spectral sensitivity.
9. The spectral optical sensor as set forth in claim 1, wherein the patterned metal film is configured such that the spectral optical sensor has a given polarization sensitivity.
10. The spectral optical sensor as set forth in claim 1, wherein the spectral optical sensor is made using a CCD, a CMOS and/or a BiCMOS method.
11. A method of manufacturing a spectral optical sensor with at least one optoelectronic semiconductor arrangement and at least one patterned metal film, wherein said at least one optoelectronic semiconductor arrangement and said at least one patterned metal film are disposed such that light to be detected first passes through the patterned metal film or is reflected therefrom and then impinges on the optoelectronic semiconductor arrangement and at least one patterned metal film is additionally configured as an electrode and wherein the spectral optical sensor is configured such that spectral sensitivity is essentially determined by the optical properties of the patterned metal film.
12. The method as set forth in claim 11, wherein the patterned metal film is provided with holes and/or slots and/or depressions and/or nanodots.
13. The method as set forth in claim 12, wherein the holes and/or slots and/or depressions and/or nanodots are made using a lithographic method.
14. The method as set forth in claim 13, wherein the spectral optical sensor is made using a CCD, a CMOS and/or a BiCMOS method.
15. An arrangement for detecting spectral information and/or polarization with a plurality of spectral optical sensors, in particular a spectrometer, as set forth in claim 1, wherein at least some spectral optical sensors of said plurality of spectral optical sensors have different spectral sensitivities and/or polarization sensitivities.
16. The arrangement for detecting spectral information and/or polarizations, in particular a spectrometer, as set forth in claim 15, wherein the spectral optical sensors of said plurality of spectral optical sensors with different wavelength sensitivities and/or polarization sensitivities are made in one manufacturing process.
17. The arrangement for detecting spectral information and/or polarizations, in particular a spectrometer, as set forth in claim 15, wherein several spectral sensors of the plurality of spectral optical sensors are combined to form a color sensor.
18. The arrangement for detecting spectral information and/or polarizations, in particular a spectrometer, as set forth in claim 15, wherein several spectral sensors are formed in a one- or two- or three-dimensional arrangement in order to form a line sensor or an image sensor.
19. The arrangement for detecting spectral information and/or polarizations, in particular a spectrometer, as set forth in claim 15, wherein several spectral sensors are formed in a one- or two- or three-dimensional arrangement, the complete spectral curve of incident light being acquired by detecting spectral information.
20. Use of a spectral optical sensor as set forth in claim 1 for spectroscopy or in a spectrometer.
Type: Application
Filed: Jul 31, 2007
Publication Date: Dec 31, 2009
Inventor: Dietmar Knipp (Bremen)
Application Number: 12/309,897
International Classification: G01J 3/447 (20060101); H01L 31/0224 (20060101); H01L 31/0232 (20060101); H01L 31/18 (20060101); G01J 4/00 (20060101);