With Responsive Control Means Patents (Class 117/202)
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Patent number: 7314519Abstract: A vapor-phase growth apparatus including a reaction furnace, a wafer container disposed in said furnace, a gas supply member, and a heating member, wherein the apparatus is designed to form a grown film on a front surface of the wafer by supplying a source gas in a high temperature state while the heating member heats the wafer in the reaction furnace through the wafer container. The wafer container includes a heat flow control section having a space for disposing a wafer; and a heat flow transmitting section joined to the heat flow control section. The contact heat resistance Rg between the heat flow control section and the heat flow transmitting section is not less than 1.0×10?6 m2K/W to not more than 5.0×10?3 m2K/W. The heat flow control section is made of a material having a coefficient of thermal conductivity 5 to 20 times that of the wafer.Type: GrantFiled: October 16, 2002Date of Patent: January 1, 2008Assignee: Nippon Mining & Metals Co., Ltd.Inventors: Eiichi Shimizu, Nobuhito Makino
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Publication number: 20070277731Abstract: Provided a method and an apparatus for growing high-quality GaN bulk single crystals without causing cracks. The method of growing GaN bulk single crystals includes providing a susceptor in a reaction chamber, providing a seed-accommodating portion having a given depth on an upper surface of the susceptor, providing GaN seeds on a bottom surface of the seed-accommodating portion so that only an upper surface of the GaN seeds is exposed, growing GaN bulk single crystals on the GaN seeds; and cooling the grown GaN bulk single crystals and separating the GaN bulk single crystals from the seed-accommodating portion.Type: ApplicationFiled: June 1, 2007Publication date: December 6, 2007Inventor: Jal-yong Han
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Patent number: 7300520Abstract: This invention provides methods, kits and automated systems for identifying a reagent in which a compound crystallizes, and methods for crystallizing a compound.Type: GrantFiled: July 9, 2004Date of Patent: November 27, 2007Assignee: The Trustees of Columbia University in the City of New YorkInventors: Peter D. Kwong, Shahzad Majeed
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Patent number: 7294197Abstract: Metallurgical grade silicon or high purity silicon beads developed from a fluidized bed process are melted in a cooled aluminum crucible, such that a non wetted interface is created between the molten silicon and a cooled supporting substrate that includes a surface layer of substantially inert aluminum oxide. It is believed that the molten silicon does not wet the surface of the supporting substrate and the surface of the supporting substrate does not chemically interact with the silicon. It is shown that, in spite of the enormous temperature difference, molten silicon (ca. 1450° C.) can be stabilized, by appropriate energy control, in direct (but non-wetted) contact with cold (ca. 40° C.) material such as aluminum.Type: GrantFiled: August 13, 2004Date of Patent: November 13, 2007Inventor: Nicholas Gralenski
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Patent number: 7285168Abstract: For the measurement, orientation and fixation of at least one single crystal, it is the object of the invention to ensure increased accuracy in the determination of crystallographic orientation and oriented fixation regardless of the outer geometry of the single crystals, and the fixation should guarantee a highly accurate cutting also with very hard materials such as sapphire or silicon carbide. The single crystal is adjustably positioned on a revolving table for determining the crystal lattice orientation, wherein the crystal lattice orientation is determined during at least one revolution of the revolving table based on a plurality of x-ray reflections. The orientation of the crystal lattice is carried out with reference to the determined angles of the normal of the lattice plane relative to the axis (X-X) of the revolving table as reference direction before carrying out the fixation of the single crystal and the fastening on a support oriented in reference direction.Type: GrantFiled: December 3, 2004Date of Patent: October 23, 2007Assignee: EFG Elektrotechnische Fabrikations-und Grosshandelsgesellschaft mnBInventors: Hans Bradaczek, Hans Berger, Hartmut Schwabe
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Patent number: 7282094Abstract: To precisely predict the distribution of densities and sizes of void defects comprising voids and inner wall oxide membranes in a single crystal. The computer-based simulation determines, at steps 1 to 7, the distribution of temperatures within a single crystal 14 growing from a melt 12 from the time of its pulling-up to the time of its completing cooling with due consideration paid to convection currents in the melt 12. The computer-based simulation, at steps 8 to 15, determines the density of voids considering the cooling process of the single crystal separated from the melt, that is, the pulling-up speed of the single crystal after the separation from the melt, and reflecting the effect of slow and rapid cooling of the single crystal in the result, and relates the radius of voids with the thickness of inner wall oxide membrane developed around the voids.Type: GrantFiled: May 30, 2003Date of Patent: October 16, 2007Assignee: Sumco CorporationInventors: Kounosuke Kitamura, Jun Furukawa, Naoki Ono
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Patent number: 7270709Abstract: A precursor and method for filling a feature in a substrate. The method generally includes depositing a barrier layer, the barrier layer being formed from pentakis(dimethylamido)tantalum having less than about 5 ppm of impurities. The method additionally may include depositing a seed layer over the barrier layer and depositing a conductive layer over the seed layer. The precursor generally includes pentakis(dimethylamido)tantalum having less than about 5 ppm of impurities. The precursor is generated in a canister coupled to a heating element configured to reduce formation of impurities.Type: GrantFiled: May 2, 2005Date of Patent: September 18, 2007Assignee: Applied Materials, Inc.Inventors: Ling Chen, Vincent W. Ku, Hua Chung, Christophe Marcadal, Seshadri Ganguli, Jenny Lin, Dien-Yeh Wu, Alan Ouye, Mei Chang
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Patent number: 7244306Abstract: A single crystal ingot is cut to an axial direction so as to including the central axis, a sample for measurement including regions [V], [Pv], [Pi] and [I] is prepared, and a first sample and second sample are prepared by dividing the sample into two so as to be symmetrical against the central axis. A first transition metal is metal-stained on the surface of the first sample and a second transition metal different from the first transition metal is metal-stained on the surface of the second sample. The first and second samples stained with the metals are thermally treated and the first and second transition metals are diffused into the inside of the samples. Recombination lifetimes in the whole of the first and second samples are respectively measured, and the vertical measurement of the first sample is overlapped on the vertical measurement of the second sample.Type: GrantFiled: October 17, 2003Date of Patent: July 17, 2007Assignee: Sumitomo Mitsubishi Silicon CorporationInventors: Kazunari Kurita, Jun Furukawa
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Patent number: 7217319Abstract: A crystallization apparatus includes an illumination system which illuminates a phase shifter having a phase shift portion, and irradiates a polycrystal semiconductor film or an amorphous semiconductor film with a light beam having a predetermined light intensity distribution in which a light intensity is minimum in a point area corresponding to the phase shift portion of the phase shifter, thereby forming a crystallized semiconductor film, the phase shifter has four or more even-numbered phase shift lines which intersect at a point constituting the phase shift portion. An area on one side and an area on the other side of each phase shift line have a phase difference of approximately 180 degrees.Type: GrantFiled: December 1, 2003Date of Patent: May 15, 2007Assignee: Advanced LCD Technologies Development Center Co., Ltd.Inventors: Masakiyo Matsumura, Yukio Taniguchi
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Patent number: 7214270Abstract: The present invention comprises a light modulation optical system having a first element which forms a desired light intensity gradient distribution to an incident light beam and a second element which forms a desired light intensity minimum distribution with an inverse peak shape to the same, and an image formation optical system which is provided between the light modulation optical system and a substrate having a polycrystal semiconductor film or an amorphous semiconductor film, wherein the incident light beam to which the light intensity gradient distribution and the light intensity minimum distribution are formed is applied to the polycrystal semiconductor film or the amorphous semiconductor film through the image formation optical system, thereby crystallizing a non-crystal semiconductor film. The pattern of the first element is opposed to the pattern of the second element.Type: GrantFiled: September 27, 2004Date of Patent: May 8, 2007Assignee: Advanced LCD Technologies Development Center Co., Ltd.Inventors: Yukio Taniguchi, Masakiyo Matsumura, Noritaka Akita
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Patent number: 7211145Abstract: A substrate processing apparatus include a spin chuck capable of holding a semiconductor wafer in a horizontal position, a drive motor for driving the spin chuck for rotation, and a processing vessel accommodating the spin chuck and the drive motor 50 therein and capable of sealing a supercritical fluid, such as supercritical carbon dioxide, therein. The supercritical fluid flows along the upper and the lower surface of the semiconductor wafer at velocities relative to the upper and the lower surface of the semiconductor wafer as the spin chuck holding the semiconductor wafer in a horizontal position rotates to remove contaminants including particles and adhering to the semiconductor wafer from the semiconductor wafer.Type: GrantFiled: April 23, 2003Date of Patent: May 1, 2007Assignee: Tokyo Electron LimitedInventor: Gentaro Goshi
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Patent number: 7195670Abstract: High throughput screening of crystallization of a target material is accomplished by simultaneously introducing a solution of the target material into a plurality of chambers of a microfabricated fluidic device. The microfabricated fluidic device is then manipulated to vary the solution condition in the chambers, thereby simultaneously providing a large number of crystallization environments. Control over changed solution conditions may result from a variety of techniques, including but not limited to metering volumes of crystallizing agent into the chamber by volume exclusion, by entrapment of volumes of crystallizing agent determined by the dimensions of the microfabricated structure, or by cross-channel injection of sample and crystallizing agent into an array of junctions defined by intersecting orthogonal flow channels.Type: GrantFiled: April 5, 2002Date of Patent: March 27, 2007Assignees: California Institute of Technology, The Regents of the University of CaliforniaInventors: Carl L. Hansen, Stephen R. Quake, James M. Berger
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Patent number: 7125452Abstract: A process for calibrating the temperature control unit of a vertical gradient freeze crystal growth oven, instead of the fused material a test body (3) is used in the oven (1) that does not melt at the oven temperature, that has a heat conductivity comparable to the fused material and a central bore (4). After turning on the resistance heaters (8, 9, 10) of the oven (1) the temperature at the level of the individual control temperature indicators (11, 12, 13) of the oven (1) is measured via a reference temperature indicator (5) that can be fully inserted into the bore (4) and subsequently the output of the respective resistance heaters (8, 9, 10) is set to a desired temperature value.Type: GrantFiled: July 30, 2003Date of Patent: October 24, 2006Assignee: Crystal Growing Systems GmbHInventor: Andreas Mühe
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Patent number: 7105048Abstract: Each region, which should be left on a substrate after patterning, of a semiconductor film is grasped in accordance with a mask. Then, each region to be scanned with laser light is determined so that at least the region to be obtained through the patterning is crystallized, and a beam spot is made to hit the region to be scanned, thereby partially crystallizing the semiconductor film. Each portion with low output energy of the beam spot is shielded by a slit. In the present invention, the laser light is not scanned and irradiated onto the entire surface of the semiconductor film but is scanned such that at least each indispensable portion is crystallized to a minimum. With the construction described above, it becomes possible to save time taken to irradiate the laser light onto each portion to be removed through the patterning after the crystallization of the semiconductor film.Type: GrantFiled: November 27, 2002Date of Patent: September 12, 2006Assignee: Semiconductor Energy Laboratory Co., Ltd.Inventors: Shunpei Yamazaki, Hisashi Ohtani, Masaaki Hiroki, Koichiro Tanaka, Aiko Shiga, Satoshi Murakami, Mai Akiba
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Patent number: 7101436Abstract: A crystallization apparatus includes an optical illumination system to illuminate a phase shift mask and which irradiates an amorphous semiconductor film with a light beam having an inverse peak type light intensity distribution including a minimum light intensity in a point corresponding to a phase shift portion of the phase shift mask to produce a crystallized semiconductor film. A wavefront dividing element is disposed on a light path between the optical illumination system and the phase shift mask. The wavefront dividing element wavefront-divides the light beam supplied from the optical illumination system into a plurality of light beams, and condenses the wavefront-divided light beams in the corresponding phase shift portion or in the vicinity of the portion.Type: GrantFiled: June 26, 2003Date of Patent: September 5, 2006Assignee: Advanced LCD Technologies Development Center Co., Ltd.Inventors: Yukio Taniguchi, Masakiyo Matsumura, Hirotaka Yamaguchi, Mikihiko Nishitani, Susumu Tsujikawa, Yoshinobu Kimura, Masayuki Jyumonji
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Patent number: 7097709Abstract: A laser annealing apparatus for crystallizing a semiconductor film with a linearly radiating laser beam including a laser oscillator and laser optical systems for forming a laser beam radiated from the laser oscillator linearly, for application to a semiconductor film. Each linearly radiating laser beam from each laser optical system radiated onto the semiconductor film is arrayed almost linearly in a length direction, with an interval on the semiconductor film.Type: GrantFiled: November 27, 2002Date of Patent: August 29, 2006Assignee: Mitsubishi Denki Kabushiki KaishaInventors: Tatsuki Okamoto, Tetsuya Ogawa, Yukio Sato, Junichi Nishimae
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Patent number: 7074271Abstract: A surface of a reference sample is contaminated with a transition metal, and a heat treatment is performed to diffuse the transition metal in the sample. A concentration of recombination centers formed by the transition metal is measured in the entire heat-treated reference sample, and a region [V], a region [Pv], a region [Pi], and a region [I] in the reference sample are defined based on the values measured. Meanwhile, recombination lifetimes associated with the transition metal are measured in the entire heat-treated reference sample. Based on both of the measurement results, a correlation line of the concentration of recombination centers and the recombination lifetimes is produced. A surface of the measurement sample is contaminated with the transition metal, and a heat treatment is performed to diffuse the transition metal in the sample.Type: GrantFiled: February 23, 2004Date of Patent: July 11, 2006Assignee: Sumitomo Mitsubishi Silicon CorporationInventors: Jun Furukawa, Kazunari Kurita, Kazuhiro Harada
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Patent number: 7052545Abstract: High throughput screening of crystallization of a target material is accomplished by simultaneously introducing a solution of the target material into a plurality of chambers of a microfabricated fluidic device. The microfabricated fluidic device is then manipulated to vary the solution condition in the chambers, thereby simultaneously providing a large number of crystallization environments. Control over changed solution conditions may result from a variety of techniques, including but not limited to metering volumes of crystallizing agent into the chamber by volume exclusion, by entrapment of volumes of crystallizing agent determined by the dimensions of the microfabricated structure, or by cross-channel injection of sample and crystallizing agent into an array of junctions defined by intersecting orthogonal flow channels.Type: GrantFiled: June 22, 2001Date of Patent: May 30, 2006Assignees: California Institute of Technology, The Regents of the University of CaliforniaInventors: Stephen R. Quake, Carl L. Hansen
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Patent number: 7033439Abstract: A hydrogen chloride gas and an ammonia gas are introduced with a carrier gas into a reactor in which a substrate and at least an aluminum metallic material through conduits. Then, the hydrogen gas and the ammonia gas are heated by heaters, and thus, a III–V nitride film including at least Al element is epitaxially grown on the substrate by using a Hydride Vapor Phase Epitaxy method. The whole of the reactor is made of an aluminum nitride material which does not suffer from the corrosion of an aluminum chloride gas generated by the reaction of an aluminum metallic material with a hydrogen chloride gas.Type: GrantFiled: August 13, 2001Date of Patent: April 25, 2006Assignee: NGK Insulators, Ltd.Inventors: Tomohiko Shibata, Keiichiro Asai, Mitsuhiro Tanaka
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Patent number: 7025828Abstract: A method of determining the optimal yield of a target compound includes the steps of: (a) determining the initial composition of a mixture of compounds containing the target compound; (b) dissolving the mixture in a solvent; (c) placing a quantity of the solution in a plurality of vessels; (d) optionally, placing a portion of a different derivatising agent in each vessel; (e) causing crystallisation to occur; (f) analysing the contents of the vessels after the crystallisation has approached equilibrium to determine the compositions of the liquors and the compositions of the solids; and (g) comparing the compositions determined in step (f) to profile the performance of each system in terms of the projected maximum yield of target compound is an optimised crystallisation process.Type: GrantFiled: November 5, 2001Date of Patent: April 11, 2006Assignee: Avantium International B.V.Inventors: Alan Arthur Smith, Lisa Lynn Agocs, Benjamin Mckay, Francois Gilardoni
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Patent number: 7022184Abstract: Atomic layer deposition is used to provide a solid film on a plurality of disc shaped substrates. The substrates are entered spaced apart in a boat, in a furnace and heated to deposition temperature. In the furnace the substrate is exposed to alternating and sequential pulses of at least two mutually reactive reactants, in such way that the deposition temperature is high enough to prevent condensation of the at least two reactants on the surface but not high enough to result in significant thermal decomposition of each of the at least two reactants individually.Type: GrantFiled: June 12, 2003Date of Patent: April 4, 2006Assignee: ASM International N.V.Inventor: Margreet Albertine Anne-Marie Van Wijck
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Patent number: 7022191Abstract: The present invention is related to a method of crystallizing an amorphous silicon layer and a crystallizing apparatus thereof which crystallize an amorphous silicon layer using plasma. The present invention includes the steps of depositing an inducing substance for silicon crystallization on an amorphous silicon layer by plasma exposure, and carrying out annealing on the amorphous silicon layer to the amorphous silicon layer. The present invention includes a chamber having an inner space, a substrate support in the chamber wherein the substrate support supports a substrate, a plasma generating means in the chamber wherein the plasma generating means produces plasma inside the chamber, and a heater at the substrate support wherein the heater supplies the substrate with heat.Type: GrantFiled: July 27, 2004Date of Patent: April 4, 2006Assignee: LG.Philips LCD Co., Ltd.Inventors: Jin Jang, Soo-Young Yoon, Jae-Young Oh, Woo-Sung Shon, Seong-Jin Park
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Patent number: 7014705Abstract: A microfluidic method is provided that comprises: delivering a first fluid to a first lumen of a microfluidic device and a second, different fluid to a second lumen of the microfluidic device, the first and second lumens sharing a common wall which allows for diffusion between the lumens over at least a portion of the length of the lumens; and having the first and second fluids diffuse between the first and second lumens.Type: GrantFiled: January 29, 2002Date of Patent: March 21, 2006Assignee: Takeda San Diego, Inc.Inventor: Peter R. David
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Patent number: 7014706Abstract: A crystal forming apparatus and method for using the apparatus, the apparatus including a plate and a film. The plate has a site adapted to hold a screening solution. The film is adjacent to the plate. The film seals the site and is adapted to contain a precipitant solution inside the site with an air gap between the screening solution and the precipitant solution. In a preferred embodiment, the film is transparent. In another preferred embodiment, the plate comprises a second transparent film supported by a lattice structure and the precipitant solution is sandwiched between the two films.Type: GrantFiled: January 28, 2004Date of Patent: March 21, 2006Assignee: Neuro Probe IncorporatedInventor: Richard H. Goodwin, Jr.
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Patent number: 7011709Abstract: A crystallization apparatus includes an illumination optical system to illuminate a phase shift mask and which irradiates an amorphous semiconductor film with a light beam having an intensity distribution of an inverse peak type having a smallest light intensity in a point corresponding to a phase shift portion of the phase shift mask to generate a crystallized semiconductor film. A convergence/divergence element is disposed on a light path between the illumination optical system and phase shift mask. The convergence/divergence element converts the light beam supplied from the illumination optical system into a light beam having an upward concave intensity distribution in which the light intensity is lowest in the phase shift portion and in which the light intensity increases as distant from the phase shift portion to irradiate the phase shift mask.Type: GrantFiled: June 26, 2003Date of Patent: March 14, 2006Assignee: Advanced LCD Technologies Development Center Co., Ltd.Inventors: Yukio Taniguchi, Masakiyo Matsumura, Hirotaka Yamaguchi, Mikihiko Nishitani, Susumu Tsujikawa, Yoshinobu Kimura, Masayuki Jyumonji
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Patent number: 7001462Abstract: A method of making an oriented fluoride crystal blank for transmitting below 250 nm ultraviolet light includes irradiating a fluoride crystal blank with an x-ray beam, detecting the x-ray beams diffracted from the fluoride crystal blank, generating a diffraction pattern from the x-ray beam diffracted from the fluoride crystal blank, determining an angular deviation of an optical axis of the fluoride crystal blank from a specific crystallographic direction, and, if the angular deviation is not within a predefined range, modifying the fluoride crystal blank in a manner such that that the resultant angular deviation between the optical axis of the fluoride crystal blank from the specific crystallographic direction after modifying falls within the predefined range.Type: GrantFiled: March 5, 2003Date of Patent: February 21, 2006Assignee: Corning IncorporatedInventors: Michael L. Genier, Richard S. Priestley, Rebecca S. Retherford
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Patent number: 6994749Abstract: A microfluidic device is provided that comprises: a substrate; and a plurality of microvolumes at least partially defined by the substrate, each microvolume comprising a first submicrovolume and a second submicrovolume in fluid communication with the first submicrovolume when the device is rotated about a first rotational axis; wherein rotation of the device about the first rotational axis causes a fixed volume to be transported to each of the second submicrovolumes.Type: GrantFiled: January 29, 2002Date of Patent: February 7, 2006Assignee: SYRRX, Inc.Inventor: Peter R. David
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Patent number: 6962624Abstract: The invention relates to a method and a device for depositing especially, organic layers. In a heated reactor, a non-gaseous starting material that is stored in a source in the form of a container is transported from said source to a substrate by a carrier gas in gaseous form and is deposited on said substrate. The rate of production of the gaseous starting material by the source is unpredictable due to a heat input that cannot be regulated in a reproducible manner and due to cooling resulting from the carrier gas. The invention therefore provides that the preheated carrier gas washes through the starting material from bottom to top, the starting material being kept essentially isothermal in relation to the carrier gas by the heated container walls.Type: GrantFiled: March 28, 2003Date of Patent: November 8, 2005Assignee: Aixtron AGInventors: Holger Jürgensen, Gerhard Karl Strauch, Markus Schwambera
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Patent number: 6960254Abstract: A method and apparatus for controlling the quenching rate of a monocrystalline ingot pulled from a melt by adjusting one or more post growth processing parameter. A temperature model generates a temperature profile that represents the surface temperature along the length of the ingot at the instant it is pulled from the melt. A first temperature at a particular location along the length of the crystal is determined from the temperature profile. A temperature sensor senses a second temperature at the same particular location. A PLC calculates a quenching rate of the crystal as a function of the first temperature and the second temperature. The PLC generates an error between a target quenching rate and a calculated quenching rate, and one or more post growth process parameters are adjusted as function of the error signal to optimize the quenching rate.Type: GrantFiled: July 21, 2003Date of Patent: November 1, 2005Assignee: MEMC Electronic Materials, Inc.Inventors: Zheng Lu, Steven L. Kimbel
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Patent number: 6923859Abstract: Disclosed are an apparatus for manufacturing GaN substrate and a manufacturing method thereof enabling to prevent micro-cracks or bending of a GaN substrate by separating a substrate and a GaN layer from each other after growing the GaN layer on the substrate in the same chamber. The present invention includes a chamber for loading a substrate therein, a heating means heating the chamber, a Ga boat installed inside the chamber to receive a Ga molecule producing material, an injection pipe injecting a nitrogen molecule producing gas in the chamber, the nitrogen molecule producing gas reacting chemically on the Ga molecule producing material to form a GaN layer on the substrate, and a transparent window at a circumference of the chamber to apply a laser beam to the substrate.Type: GrantFiled: December 13, 2002Date of Patent: August 2, 2005Assignee: LG Electronics Inc.Inventor: Chin Kyo Kim
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Patent number: 6913648Abstract: There is provided an apparatus for preparing crystals of a phosphor precursor, comprising a reactor, a stirrer, and a supply pipe for supplying, into the reactor, a solution containing at least an aqueous solution of inorganic fluoride salt, wherein an ion concentration measuring device is provided in at least one of an interior of the reactor and a liquid contacting portion which contacts the solution containing an aqueous solution of inorganic fluoride salt.Type: GrantFiled: October 25, 2002Date of Patent: July 5, 2005Assignee: Fuji Photo Film Co., Ltd.Inventor: Kazuhiro Hasegawa
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Patent number: 6872250Abstract: A method for determining crystallization conditions for a material, the method comprising: taking a microfluidic device comprising one or more lumens having microvolume dimensions and a plurality of different crystallization samples within the one or more lumens, the plurality of crystallization samples comprising a material to be crystallized and crystallization conditions that vary among the plurality of crystallization samples; transporting the plurality of different crystallization samples within the lumens; and identifying a precipitate or crystal formed in the one or more lumens.Type: GrantFiled: January 29, 2002Date of Patent: March 29, 2005Assignee: Syrrx, Inc.Inventors: Peter R. David, Nathaniel E. David
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Patent number: 6869478Abstract: A method for producing a silicon ingot having no defect over a wide range of region with stability and good reproducibility, wherein when a silicon single crystal (11) is pulled up form a silicon melt (13), the shape of a solid-liquid interface (14) which a boundary between the silicon melt (13) and the silicon single crystal (11) and the temperature distribution on the side face (11b) of a single crystal under being pulled up are appropriately controlled.Type: GrantFiled: March 19, 2001Date of Patent: March 22, 2005Assignee: Komatsu Denshi Kinzoku Kabushiki KaishaInventors: Kozo Nakamura, Toshiaki Saishoji, Shinji Togawa, Toshirou Kotooka, Susumu Maeda
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Patent number: 6863728Abstract: A low defect (e.g., dislocation and micropipe) density silicon carbide (SiC) is provided as well as an apparatus and method for growing the same. The SiC crystal, grown using sublimation techniques, is preferably divided into two stages of growth. During the first stage of growth, the crystal grows in a normal direction while simultaneously expanding laterally. Although dislocations and other material defects may propagate within the axially grown material, defect propagation and generation in the laterally grown material are substantially reduced, if not altogether eliminated. After the crystal has expanded to the desired diameter, the second stage of growth begins in which lateral growth is suppressed and normal growth is enhanced. A substantially reduced defect density is maintained within the axially grown material that is based on the laterally grown first stage material.Type: GrantFiled: May 31, 2002Date of Patent: March 8, 2005Assignee: The Fox Group, Inc.Inventors: Yury Alexandrovich Vodakov, Mark Grigorievich Ramm, Evgeny Nikolaevich Mokhov, Alexandr Dmitrievich Roenkov, Yury Nikolaevich Makarov, Sergei Yurievich Karpov, Mark Spiridonovich Ramm, Heikki I. Helava
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Patent number: 6828218Abstract: The present invention provides a method of forming a thin film using atomic layer deposition (ALD). An ALD reactor having a single reaction space is provided. A batch of substrates is concurrently loaded into the single reaction space of the ALD reactor. Then, a gas containing reactants is introduced into the single reaction space, and a portion of the reactants is chemisorbed on top surfaces of the batch of substrates within the single reaction space. Non-chemically adsorbed reactants are then removed from the single reaction space. In accordance with one embodiment of the present invention, after introducing the gas containing reactants, non-chemically adsorbed reactants are diluted in the single reaction space to facilitate the removal of non-chemically adsorbed reactants.Type: GrantFiled: May 31, 2001Date of Patent: December 7, 2004Assignee: Samsung Electronics Co., Ltd.Inventors: Yeong-Kwan Kim, Young-Wook Park, Seung-Hwan Lee
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Patent number: 6797056Abstract: A microfluidic method is provided that comprises: delivering first and second fluids to a lumen of a microfluidic device such that the first and second fluids flow adjacent to each other within the lumen without mixing except for diffusion at an interface between the first and second fluids, wherein the first fluid is different than the second fluid.Type: GrantFiled: January 29, 2002Date of Patent: September 28, 2004Assignee: Syrrx, Inc.Inventor: Peter R. David
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Patent number: 6783590Abstract: A method of growing a thin film onto a substrate placed in a reaction chamber according to the ALD method by subjecting the substrate to alternate and successive surface reactions. The method includes providing a first reactant source and providing an inactive gas source. A first reactant is fed from the first reactant source in the form of repeated alternating pulses to a reaction chamber via a first conduit. The first reactant is allowed to react with the surface of the substrate in the reaction chamber. Inactive gas is fed from the inactive gas source into the first conduit via a second conduit that is connected to the first conduit at a first connection point so as to create a gas phase barrier between the repeated alternating pulses of the first reactant entering the reaction chamber. The inactive gas is withdrawn from said first conduit via a third conduit connected to the first conduit at a second connection point.Type: GrantFiled: April 16, 2001Date of Patent: August 31, 2004Assignee: ASM International N.V.Inventors: Sven Lindfors, Pekka T. Soininen
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Patent number: 6773507Abstract: Method and apparatus for depositing layers by atomic layer deposition. A virtual shower curtain is established between the substrate support and chamber to minimize the volume in which the reactants are distributed. A showerhead may be used to allow closer placement of the substrate thereto, further reducing the reaction volume. Zero dead space volume valves with close placement to the chamber lid and fast cycle times also improve the cycle times of the process.Type: GrantFiled: August 7, 2002Date of Patent: August 10, 2004Assignee: Applied Materials, Inc.Inventors: Ravi Jallepally, Shih-Hung Li, Alain Duboust, Jun Zhao, Liang-Yuh Chen, Daniel A. Carl
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Patent number: 6733585Abstract: In a Czochralski (CZ) single crystal puller equipped with a cooler and a thermal insulation member, which are to be disposed in a CZ furnace, smooth recharge and additional charge of material are made possible. Further, elimination of dislocations from a silicon seed crystal by use of the Dash's neck method can be performed smoothly. To these ends, there is provided a CZ single crystal puller, wherein a cooler and a thermal insulation member are immediately moved upward away from a melt surface during recharge or additional charge of material or during elimination of dislocations from a silicon seed crystal by use of the Dash's neck method.Type: GrantFiled: February 1, 2001Date of Patent: May 11, 2004Assignee: Komatsu Denshi Kinzoku Kabushiki KaishaInventors: Hiroshi Inagaki, Shigeki Kawashima, Makoto Kamogawa, Tadashi Hata
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Patent number: 6726764Abstract: A control method for use with a crystal puller for growing a monocrystalline semiconductor crystal from a melt according to the Czochralski process. The method includes defining an initial interval of time for observing growth of the crystal being pulled from the melt and determining diameter variations occurring during the interval. Based on the variations in the crystal diameter, the method defines a function r(t). By performing a best fit routine on the function r(t), the method deduces current values of crystal radius rf, meniscus height hf and growth rate Vgf at the end of the observation interval. The method also includes determining pull rate and heater power parameters as a function of the growth rate to control the crystal puller to minimize variations in both crystal diameter and growth rate during subsequent growth of the crystal.Type: GrantFiled: November 13, 2001Date of Patent: April 27, 2004Assignee: MEMC Electronic Materials, Inc.Inventors: Paolo Mutti, Vladmir V. Voronknov
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Patent number: 6723166Abstract: A seed crystal holder holds a SiC seed crystal while a SiC bulk single crystal is grown on the front surface of the seed crystal. The holder includes a back surface body with a bearing surface for bearing against a back surface of the SiC seed crystal. The holder includes a lateral mount for receiving the back surface body and the SiC seed crystal. The lateral mount has a projection located on an end facing the SiC seed crystal. The SiC seed crystal rests on the projection.Type: GrantFiled: January 7, 2002Date of Patent: April 20, 2004Assignee: Siemens AktiengesellschaftInventors: Harald Kuhn, Rene Stein, Johannes Voelkl, Wolfgang Zintl
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Patent number: 6623708Abstract: A protein crystal growth assembly including a crystal growth cell and further including a cell body having a top side and a bottom side and a first aperture defined therethrough, the cell body having opposing first and second sides and a second aperture defined therethrough. A cell barrel is disposed within the cell body, the cell barrel defining a cavity alignable with the first aperture of the cell body, the cell barrel being rotatable within the second aperture. A reservoir is coupled to the bottom side of the cell body and a cap having a top side is disposed on the top side of the cell body.Type: GrantFiled: September 27, 2001Date of Patent: September 23, 2003Assignee: UAB Research FoundationInventors: Lawrence Delucas, Robyn Rouleau, Kenneth Banasiewicz
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Patent number: 6592824Abstract: A protein crystal growth assembly including a crystal growth cell and further including a cell body having a top side and a bottom side and a first aperture defined therethrough, the cell body having opposing first and second sides and a second aperture defined therethrough. A cell barrel is disposed within the cell body, the cell barrel defining a cavity alignable with the first aperture of the cell body, the cell barrel being rotatable within the second aperture. A reservoir is coupled to the bottom side of the cell body and a cap having a top side is disposed on the top side of the cell body.Type: GrantFiled: September 27, 2001Date of Patent: July 15, 2003Assignee: UAB Research FoundationInventors: Lawrence Delucas, Robyn Rouleau, Kenneth Banasiewicz
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Patent number: 6572699Abstract: A melt level detector is provided for detecting the melt level of a CZ furnace by triangulation. The laser beam (2) from a laser source (1) is moved in radial directions of a crucible (14) in the CZ furnace to find a location where a photodetector system (5, 7) can receive the reflection (4) from the melt level (3), and the laser beam (2) is fixed at the location. Since the measurements thus take place within an extremely small angular range of the laser beam, the melt level (3) can be detected with little effect of noise on the melt level (3) while eliminating complexity of the device.Type: GrantFiled: September 14, 2001Date of Patent: June 3, 2003Assignee: Komatsu Denshi Kinzoku Kabushiki KaishaInventors: Masato Moriya, Tadayuki Hanamoto, Kazuhiro Mimura, Toshirou Kotooka
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Patent number: 6569236Abstract: A device for producing single-crystal ingot, provided with coolers (19) using a piping system through which cooling water failure caused by water leakage and at the same time to find out conditions for maximizing a production efficiency, the coolers (19) are disposed at portions of the inner sides of thermal shielding elements (18) and the lower ends (19a) of cooling pipes are so set as to be positioned up to 150 mm high from the surface (12a) of molten silicon liquid.Type: GrantFiled: September 27, 2001Date of Patent: May 27, 2003Assignee: Komatsu Denshi Kinzoku Kabushiki KaishaInventors: Shigeo Morimoto, Hiroshi Monden, Daisuke Ebi, Toshirou Kotooka
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Publication number: 20030084839Abstract: An apparatus for producing diamond in a deposition chamber including a heat-sinking holder for holding a diamond and for making thermal contact with a side surface of the diamond adjacent to an edge of a growth surface of the diamond, a noncontact temperature measurement device positioned to measure temperature of the diamond across the growth surface of the diamond and a main process controller for receiving a temperature measurement from the noncontact temperature measurement device and controlling temperature of the growth surface such that all temperature gradients across the growth surface are less than 20° C.Type: ApplicationFiled: November 6, 2002Publication date: May 8, 2003Inventors: Russell J. Hemley, Ho-Kwang Mao, Chih-Shiue Yan, Yogesh K. Vohra
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Patent number: 6521042Abstract: Molecular beam epitaxy (202) with growing layer thickness control (206) by feedback of mass spectrometer (204) signals based on a process model. Examples include III-V compound structures with multiple AlAs, InGaAs, and InAs layers as used in resonant tunneling diodes.Type: GrantFiled: June 21, 1996Date of Patent: February 18, 2003Assignee: Texas Instruments IncorporatedInventors: Francis G. Celii, Alan J. Katz, Yung-Chung Kao, Theodore S. Moise
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Patent number: 6514337Abstract: A method of growing a crystalline ingot having a <110> orientation, such as a dislocation-free (“DF”) crystalline ingot, is provided. The method of manufacture includes providing a liquidous melt. Next, a seed crystal having a <110> crystal direction is contacted with the surface of the melt. The seed crystal is then withdrawn from the melt to thereby grow a neck. According to one embodiment, the seed elevation rate is automatically modified during the withdrawing step to reduce the diameter of the neck to greater than about 2.5 mm. Thereafter, the seed elevation rate is manually modified to alternate the diameter of the neck between about 2 mm and about 2.5 mm to thereby shape the neck into a recurring hourglass configuration. The neck is then withdrawn from the melt to grow a crystalline ingot having a <110> crystal direction and a diameter of at least about 200 mm.Type: GrantFiled: February 7, 2001Date of Patent: February 4, 2003Assignee: SEH America, Inc.Inventors: Rosemary T. Nettleton, Robert L. Faulconer, Aaron W. Johnson
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Patent number: 6508880Abstract: A low defect (e.g., dislocation and micropipe) density silicon carbide (SiC) is provided as well as an apparatus and method for growing the same. The SiC crystal, grown using sublimation techniques, is preferably divided into two stages of growth. During the first stage of growth, the crystal grows in a normal direction while simultaneously expanding laterally. Although dislocations and other material defects may propagate within the axially grown material, defect propagation and generation in the laterally grown material are substantially reduced, if not altogether eliminated. After the crystal has expanded to the desired diameter, the second stage of growth begins in which lateral growth is suppressed and normal growth is enhanced. A substantially reduced defect density is maintained within the axially grown material that is based on the laterally grown first stage material.Type: GrantFiled: February 14, 2001Date of Patent: January 21, 2003Assignee: The Fox Group, Inc.Inventors: Yury Alexandrovich Vodakov, Mark Grigorievich Ramm, Evgeny Nikolaevich Mokhov, Alexandr Dmitrievich Roenkov, Yury Nikolaevich Makarov, Sergei Yurievich Karpov, Mark Spiridonovich Ramm, Heikki I. Helava
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Patent number: 6503320Abstract: A blocking device for remote, selective blocking of a cold stream used in a protein crystal annealing process during X-ray protein crystallography includes a blocking member adapted to be selectively moved between at least a blocking position where the blocking member blocks the cold stream and a non-blocking position where the blocking member does not block the cold stream, and an actuation mechanism adapted to impart movement to the blocking member to cause the blocking member to be selectively moved between at least the blocking position and the non-blocking position.Type: GrantFiled: August 27, 2001Date of Patent: January 7, 2003Assignee: Structural Genomix, Inc.Inventors: Janet Newman, Jon A. Christopher, Brian L. Ganz, James A. Benjamin