Abstract: Provided is graphite group that, when observed with a transmission electron microscope, has a laminated surface spacing of 0.2-1 nm, includes graphite pieces measuring 1.5-10 nm in a direction perpendicular to the laminating direction, the laminating direction of the graphite pieces being irregular.

Abstract: Nano polycrystalline diamond is composed of carbon and a plurality of impurities other than carbon. A concentration of each of the plurality of impurities is not higher than 0.01 mass %, and the nano polycrystalline diamond has a crystal grain size (a maximum length) not greater than 500 nm. The nano polycrystalline diamond can be fabricated by preparing graphite in which a concentration of an impurity is not higher than 0.01 mass % and converting graphite to diamond by applying an ultra-high pressure and a high temperature to graphite.

Abstract: Nanocrystalline diamond coatings exhibit stress in nano/micro-electro mechanical systems (MEMS). Doped nanocrstalline diamond coatings exhibit increased stress. A carbide forming metal coating reduces the in-plane stress. In addition, without any metal coating, simply growing UNCD or NCD with thickness in the range of 3-4 micron also reduces in-plane stress significantly. Such coatings can be used in MEMS applications.

Abstract: The present invention is directed to a method of growing thin film diamond. Since there are micro-grooves formed between internal grains of the heterogeneous substrate during lateral epitaxy growth, diamond seeds are allowed to be embedded in the micro-grooves; surface damage caused by scratching method or seeding method also can be prevented. As a result, a continuous diamond thin film with uniform thickness and high quality can be obtained.

Abstract: A high pressure high temperature (HPHT) method for synthesizing single crystal diamond, wherein a single crystal diamond seed having an aspect ratio of at least (1) and a growth surface substantially parallel to a {110} crystallographic plane is utilized is described. The growth is effected at a temperature in the range from 1280° C. to 1390° C.

Abstract: The invention relates to a single crystal boron doped CVD diamond that has a toughness of at least about 22 MPa m1/2. The invention further relates to a method of manufacturing single crystal boron doped CVD diamond. The growth rate of the diamond can be from about 20-100 ?m/h.

Abstract: A method of forming mono-crystalline diamond by chemical vapor deposition, the method comprising the steps of: (a) providing at least one diamond seed; (b) exposing the seed to conditions for growing diamond by chemical vapor deposition, including supplying reaction gases that include a carbon-containing gas and hydrogen for growing diamond and include a nitrogen-containing gas; and (c) controlling the quantity of nitrogen-containing gas relative to other gases in the reaction gases such that diamond is caused to grow by step-growth with defect free steps without inclusions. The nitrogen is present in the range of 0.0001 to 0.02 vol %. Diborane can also be present in a range of from 0.00002 to 0.002 vol %. The carbon-containing gas can be methane.

Abstract: A method of introducing NV centers in single crystal CVD diamond material is described. One step of the method comprises irradiating diamond material that contains single substitutional nitrogen to introduce isolated vacancies into the diamond material in a concentration of at least 0.05 ppm and at most 1 ppm. Another step of the method comprises annealing the irradiated diamond to form NV centers from at least some of the single substitutional nitrogen defects and the introduced isolated vacancies.

Abstract: A method of producing a CVD single crystal diamond layer on a substrate includes adding into a DVD synthesis atmosphere a gaseous source comprising silicon. The method can be used to mark the diamond material, for instance to provide means by which its synthetic nature can more easily be determined. It can also be exploited to generate single crystal diamond material of high color.

Abstract: Synthetic monocrystalline diamond compositions having one or more monocrystalline diamond layers formed by chemical vapor deposition, the layers including one or more layers having an increased concentration of one or more impurities (such as boron and/or isotopes of carbon), as compared to other layers or comparable layers without such impurities. Such compositions provide an improved combination of properties, including color, strength, velocity of sound, electrical conductivity, and control of defects. A related method for preparing such a composition is also described., as well as a system for use in performing such a method, and articles incorporating such a composition.

Abstract: Embodiments of methods of altering the color of diamonds are disclosed. In an embodiment, a method for altering the color of diamonds includes identifying and selecting a diamond having a suitable nitrogen content, HPHT processing the selected diamond under diamond-stable conditions to alter the color of the selected diamond from a first color to a second color, irradiating the HPHT-processed diamond with an electron source having an energy between about 1 MeV and about 20 MeV so as to alter the color of the selected diamond from the second color to a third color, and annealing the irradiated diamond either under partial vacuum conditions, or under HPHT diamond-stable conditions so as to alter the color from the third color to a fourth color (e.g., pink, red, or purple, depending on the nitrogen content of the selected diamond).

Abstract: A method for producing a diamond material by contacting a fluorinated precursor with a hydrocarbon in a reactor and forming a combination in the absence of a metal catalyst; increasing the pressure of the reactor to a first pressure; heating the combination under pressure to form a material precursor; cooling the material precursor; and forming a diamond material.

Abstract: There is provided an n type (100) oriented single crystal diamond semiconductor film into which phosphorous atoms have been doped and a method of producing the same. The n type (100) oriented single crystal diamond semiconductor film, characterized in that (100) oriented diamond is epitaxially grown on a substrate under such conditions that; the diamond substrate is (100) oriented diamond, a means for chemical vapor deposition provides hydrogen, hydrocarbon and a phosphorous compound in the plasma vapor phase, the ratio of phosphorous atoms to carbon atoms in the plasma vapor phase is no less than 0.1%, and the ratio of carbon atoms to hydrogen atoms is no less than 0.05%, and the method of producing the same.

Abstract: Disclosed is a combinatorial synthesis of Diamond wherein a first reactive species is produced by catalytic treatment of Acetylene, a second reactive species is produced by decomposition of a hydrocarbon source having a low Hydrogen-to-Carbon ratio using a high energy discharge, and the two reactive species so obtained are combined in the vapor phase to yield Diamond without the need of post-treatments. The reaction is efficient and affords Diamond under mild conditions with high purity such that it may be useful for producing Diamond for semiconductor and microelectronics applications.

Abstract: A thin plate of synthetic single crystal diamond material, the thin plate of synthetic single crystal diamond material having: a thickness in a range 100 nm to 50 ???; a concentration of quantum spin defects greater than 0.1 ppb (parts-per-billion); a concentration of point defects other than the quantum spin defects of below 200 ppm (parts-per-million); and wherein at least one major face of the thin plate of synthetic single crystal diamond material comprises surface termination species which have zero nuclear spin and/or zero electron spin.

Abstract: The present invention relates to microfluidic devices and methods facilitating the growth and analysis of crystallized materials such as proteins. In accordance with one embodiment, a crystal growth architecture is separated by a permeable membrane from an adjacent well having a much larger volume. The well may be configured to contain a fluid having an identity and concentration similar to the solvent and crystallizing agent employed in crystal growth, with diffusion across the membrane stabilizing that process. Alternatively, the well may be configured to contain a fluid having an identity calculated to affect the crystallization process. In accordance with the still other embodiment, the well may be configured to contain a material such as a cryo-protectant, which is useful in protecting the crystalline material once formed.

Abstract: A method of treating a diamond, the method comprising: (i) providing a liquid metal saturated with carbon with respect to graphite precipitation; (ii) lowering the temperature of the liquid metal such that the liquid metal is saturated with carbon with respect to diamond precipitation; (iii) immersing a diamond in the liquid metal; and (iv) removing the diamond from the metal.

Abstract: Isotopically-enriched graphene and isotope junctions are epitaxially grown on a catalyst substrate using a focused carbon ion beam technique. The focused carbon ion beam is filtered to pass substantially a single ion species including a single desired carbon isotope. The ion beam and filtering together provide a means to selectively isotopically-enrich the epitaxially-grown graphene from given carbon precursor and to selectively deposit graphene enriched with different carbon isotopes in different regions.

Abstract: Heterogeneous nanowires having a core-shell structure consisting of single-crystal apatite as the core and graphitic layers as the shell and a synthesis method thereof are provided. More specifically, provided is a method capable of producing large amounts of heterogeneous nanowires, composed of graphitic shells and apatite cores, in a reproducible manner, by preparing a substrate including an element corresponding to X of X6(YO4)3Z which is a chemical formula for apatite, adding to the substrate a gaseous source containing an element corresponding to Y of the chemical formula, adding thereto a gaseous carbon source, and allowing these reactants to react under optimized synthesis conditions using chemical vapor deposition (CVD), and to a method capable of freely controlling the structure and size of the heterogeneous nanowires and also to heterogeneous nanowires synthesized thereby.

Abstract: Methods of evaluating a superabrasive volume or a superabrasive compact are disclosed. One method may comprise exposing a superabrasive volume to beta particles and detecting a quantity of scattered beta particles. Further, a boundary may be perceived between a first region and a second region of the superabrasive volume in response to detecting the quantity of scattered beta particles. In another embodiment, a boundary between a catalyst-containing region and a catalyst-diminished region of a polycrystalline diamond volume may be perceived. In a further embodiment, a boundary may be perceived between a catalyst-containing region and a catalyst-diminished region of a polycrystalline diamond compact. Additionally, a depth to which a catalyst-diminished region extends within a polycrystalline diamond volume of a polycrystalline diamond compact may be measured in response to detecting a quantity of scattered beta particles. A system configured to evaluate a superabrasive volume is disclosed.

Abstract: Diamond thin films were deposited on copper substrate by the Vapor Solid (VS) deposition method using a mixture of fullerene C60 and graphite as the source material. The deposition took place only when the substrate was kept in a narrow temperature range of approximately 550-650° C. Temperatures below and above this range results in the deposition of fullerenes and other carbon compounds, respectively.

Abstract: An electrolytic cell includes a container for holding an electrolyte. A conductively doped single crystal diamond anode electrode is positioned to be disposed within the electrolyte, as is a conductive cathode electrode. Conductors are coupled to the electrodes for coupling to a power supply. An electrolyte inlet and an electrolyte outlet are coupled to the container for causing electrolyte to flow past the electrodes. The anode electrode is downstream from the cathode electrode in one embodiment, such that an electrolyte comprising water is purified by generation of oxygen and/or ozone.

Abstract: The present invention relates to an HPHT method for synthesizing single crystal diamond, wherein a single crystal diamond seed having an aspect ratio of at least 1.5 is utilized. Single crystal diamond seeds having an aspect ratio of at least 1.5 and synthetic single crystal diamond which may be obtained by the method recited are also described. The growth surface is substantially aligned along a <100> or <110> direction in the plane of the growth surface.

Abstract: A single crystal diamond prepared by CVD and having one or more electronic characteristics; making the diamond suitable for electronic applications. Also provided is a method of making the single crystal CVD diamond.

Abstract: Semiconductor wafers composed of monocrystalline silicon and doped with nitrogen contain an OSF region and a Pv region, wherein the OSF region extends from the center radially toward the edge of the wafer as far as the Pv region; the wafer has an OSF density of less than 10 cm?2, a BMD density in the bulk of at least 3.5×108 cm?3, and a radial distribution of the BMD density with a fluctuation range BMDmax/BMDmin of not more than 3. The wafers are produced by controlling initial nitrogen content and maintaining oxygen within a narrow window, followed by a heat treatment.

Abstract: The present invention relates to diamond material comprising a boron doped single crystal diamond substrate layer having a first surface and a boron doped single crystal diamond conductive layer on said first surface, wherein the distribution of boron in the conductive layer is more uniform than the distribution of boron in the substrate layer.

Abstract: One provides nanocrystalline diamond material that comprises a plurality of substantially ordered diamond crystallites that are sized no larger than about 10 nanometers. One then disposes a non-diamond component within the nanocrystalline diamond material. By one approach this non-diamond component comprises an electrical conductor that is formed at the grain boundaries that separate the diamond crystallites from one another. The resultant nanowire is then able to exhibit a desired increase with respect to its ability to conduct electricity while also preserving the thermal conductivity behavior of the nanocrystalline diamond material.

Abstract: The present invention is directed to new laser-related uses for single-crystal diamonds produced by chemical vapor deposition. One such use is as a heat sink for a laser; another such use is as a frequency converter. The invention is also directed to a ?(3) nonlinear crystalline material for Raman laser converters comprising single crystal diamond.

Abstract: A method of incorporating a mark of origin, such as a brand mark, or fingerprint in a CVD single crystal diamond material, includes the steps of providing a diamond substrate, providing a source gas, dissociating the source gas thereby allowing homoepitaxial diamond growth, and introducing in a controlled manner a dopant into the source gas in order to produce the mark of origin or fingerprint in the synthetic diamond material. The dopant is selected such that the mark of origin or fingerprint is not readily detectable or does not affect the perceived quality of the diamond material under normal viewing conditions, but which mark of origin or fingerprint is detectable or rendered detectable under specialised conditions, such as when exposed to light or radiation of a specified wavelength, for example. Detection of the mark of origin or fingerprint may be visual detection or detection using specific optical instrumentation, for example.

Abstract: Synthetic monocrystalline diamond compositions having one or more monocrystalline diamond layers formed by chemical vapor deposition, the layers including one or more layers having an increased concentration of one or more impurities (such as boron and/or isotopes of carbon), as compared to other layers or comparable layers without such impurities. Such compositions provide an improved combination of properties, including color, strength, velocity of sound, electrical conductivity, and control of defects. A related method for preparing such a composition is also described, as well as a system for use in performing such a method, and articles incorporating such a composition.

Abstract: A method of producing a single crystal CVD diamond of a desired color which includes the steps of providing single crystal CVD diamond which is colored and heat treating the diamond under conditions suitable to produce the desired color. Colors which may be produced are, for example, in the pink-green range.

Abstract: An integrated circuit system includes a substrate, a carbon-containing silicon region over the substrate, a non-carbon-containing silicon region over the substrate, and a silicon-carbon region, including the non-carbon-containing silicon region and the carbon-containing silicon region.

Abstract: A system and method for growing diamond crystals from diamond crystal seeds by epitaxial deposition at low temperatures and atmospheric and comparatively low pressures. A solvent is circulated (by thermal convection and/or pumping), wherein carbon is added in a hot leg, transfers to a cold leg having, in some embodiments, a range of progressively lowered temperatures and concentrations of carbon via the circulating solvent, and deposits layer-by-layer on diamond seeds located at the progressively lower temperatures since as diamond deposits the carbon concentration lowers and the temperature is lowered to keep the solvent supersaturated. The solvent includes metal(s) or compound(s) that have low melting temperatures and transfer carbon at comparatively low temperatures. A controller receives parameter signals from a variety of sensors located in the system, processes these signals, and optimizes diamond deposition by outputting the necessary control signals to a plurality of control devices (e.g.

Abstract: The present invention consists in obtaining, with the capsule described, a vertical gradient favorable for diamond growth that prevails over any radial gradient by means of heating discs placed at the ends of the heating area, which implies a considerable control over the growth conditions. More specifically, in regard to the rate of growth, it allows for a better control of the quality of large crystals. Another important novelty is to use a source of carbon with a special design formed by cylindrical and conical hollows (graphite, amorphous carbon, diamond or other) with a solvent metal with a number of gases that are introduced in the capsule. Also, a nitrogen scavenger is used to avoid the formation of nitrides, carbides and oxides that are harmful for the growth and that as a significant novelty is placed outside the reaction area.

Abstract: The present invention provides in one example embodiment a synthetic diamond and a method of growing such a diamond on a plurality of seed diamonds, implanting the grown diamond with ions, and separating the grown diamond from the plurality of seed diamonds.

Abstract: A method for forming a graphene layer is disclosed herein. The method includes establishing an insulating layer on a substrate such that at least one seed region, which exposes a surface of the substrate, is formed. A seed material in the seed region is exposed to a carbon-containing precursor gas, thereby initiating nucleation of the graphene layer on the seed material and enabling lateral growth of the graphene layer along at least a portion of a surface of the insulating layer.

Abstract: A method of producing CVD diamond having a high color, which is suitable for optical applications, for example. The method includes adding a gaseous source comprising a second impurity atom type to counter the detrimental effect on colour caused by the presence in the CVD synthesis atmosphere of a first impurity atom type. The described method applies to the production of both single crystal diamond and polycrystalline diamond.

Abstract: Synthetic monocrystalline diamond compositions having one or more monocrystalline diamond layers formed by chemical vapor deposition, the layers including one or more layers having an increased concentration of one or more impurities (such as boron and/or isotopes of carbon), as compared to other layers or comparable layers without such impurities. Such compositions provide an improved combination of properties, including color, strength, velocity of sound, electrical conductivity, and control of defects. A related method for preparing such a composition is also described, as well as a system for use in performing such a method, and articles incorporating such a composition.

Abstract: The invention provides systems and methods for the deposition of an improved diamond-like carbon material, particularly for the production of magnetic recording media. The diamond-like carbon material of the present invention is highly tetrahedral, that is, it features a large number of the sp3 carbon-carbon bonds which are found within a diamond crystal lattice. The material is also amorphous, providing a combination of short-range order with long-range disorder, and can be deposited as films which are ultrasmooth and continuous at thicknesses substantially lower than known amorphous carbon coating materials. The carbon protective coatings of the present invention will often be hydrogenated. In a preferred method for depositing of these materials, capacitive coupling forms a highly uniform, selectively energized stream of ions from a dense, inductively ionized plasma.

Abstract: A system and method for growing diamond crystals from diamond crystal seeds by epitaxial deposition at low temperatures and atmospheric and comparatively low pressures. A solvent is circulated (by thermal convection and/or pumping), wherein carbon is added in a hot leg, transfers to a cold leg having, in some embodiments, a range of progressively lowered temperatures and concentrations of carbon via the circulating solvent, and deposits layer-by-layer on diamond seeds located at the progressively lower temperatures since as diamond deposits the carbon concentration lowers and the temperature is lowered to keep the solvent supersaturated. The solvent includes metal(s) or compound(s) that have low melting temperatures and transfer carbon at comparatively low temperatures. A controller receives parameter signals from a variety of sensors located in the system, processes these signals, and optimizes diamond deposition by outputting the necessary control signals to a plurality of control devices (e.g.

Abstract: A diamond layer of single crystal CVD diamond which is coloured, preferably which has a fancy colour, and which has a thickness of greater than 1 mm.

Abstract: The present invention relates to a crystal of ACE protein. The present invention further relates to methods, processes, ACE modulators, pharmaceutical compositions and uses of ACE crystal and the structure coordinates thereof.

Abstract: It is an object of the present invention to provide a diamond substrate with high toughness, a large surface area, and high quality, for use in semiconductor materials, electronic components, optical components, and so forth, and a method for manufacturing this substrate. A diamond polycrystalline film is laminated on the surface of a diamond monocrystalline substrate to create a diamond composite substrate. In said diamond composite substrate, it is preferable that the main face, which has the largest surface area of the diamond monocrystalline substrate, be the {100} plane, and the diamond polycrystalline film be laminated on the opposite face parallel to this face. The diamond monocrystalline substrate 3 may be made up of a plurality of diamond monocrystals having the same orientation of the main face, and these plurality of diamond monocrystals may be joined by a diamond crystal layer 4 to create a diamond composite substrate 2.

Abstract: An apparatus for growing a synthetic diamond comprises a growth chamber, at least one manifold allowing access to the growth chamber, and a plurality of safety clamps positioned on opposite sides of the growth chamber; wherein the growth chamber and the plurality of safety clamps are comprised of a material having a tensile strength of about 120,000-200,000 psi, a yield strength of about 100,000-160,000 psi, an elongation of about 10-20%, an area reduction of about 40-50%, an impact strength of about 30-40 ft-lbs, and a hardness greater than 320 BHN.

Abstract: The present invention relates to a method for producing colorless, single-crystal diamonds at a rapid growth rate. The method for diamond production includes controlling temperature of a growth surface of the diamond such that all temperature gradients across the growth surface of the diamond are less than about 20° C., and growing single-crystal diamond by microwave plasma chemical vapor deposition on the growth surface of a diamond at a growth temperature in a deposition chamber having an atmosphere, wherein the atmosphere comprises from about 8% to about 20% CH4 per unit of H2 and from about 5 to about 25% O2 per unit of CH4. The method of the invention can produce diamonds larger than 10 carats. Growth rates using the method of the invention can be greater than 50 ?m/hour.

Abstract: Synthetic monocrystalline diamond compositions having one or more monocrystalline diamond layers formed by chemical vapor deposition, the layers including one or more layers having an increased concentration of one or more impurities (such as boron and/or isotopes of carbon), as compared to other layers or comparable layers without such impurities. Such compositions provide an improved combination of properties, including color, strength, velocity of sound, electrical conductivity, and control of defects. A related method for preparing such a composition is also described, as well as a system for use in performing such a method, and articles incorporating such a composition.

Abstract: In a method for manufacturing a crystalline silicon film by utilizing a metal element that accelerates the crystallization of silicon, an adverse influence of this metal element can be suppressed. A semiconductor device manufacturing method is comprised of the steps of: forming an amorphous silicon film on a substrate having an insulating surface; patterning the amorphous silicon film to form a predetermined pattern; holding a metal element that accelerates the crystallization of silicon in such a manner that the metal element is brought into contact with the amorphous silicon film; performing a heating process to crystalize the amorphous silicon film, thereby being converted into a crystalline silicon film; and etching a peripheral portion of the pattern of the crystalline silicon film.

Abstract: A tiled array of diamond plates, which is suitable for wafer scale processing, for example, in the manufacture of electronic or other device structures on the diamond plates. The diamond plates are fixed to a support layer, preferably a polycrystalline diamond support layer, in a substantially planar arrangement such that at least one of the major surfaces of the respective fixed diamond plates defines a fabrication surface that is exposed for further processing. The support layer may be a backing layer, in which case only one of the major faces of the diamond substrate is exposed for further processing, or may extend between respective diamond substrates such that both major surfaces are exposed for further processing.

Abstract: A method comprising the steps of continuously changing the concentrations in solution of a biomacromolecule to be crystallized and a precipitant, thereby constructing a crystal phase diagram containing a solubility curve, searching for optimum conditions of crystallization on the basis of the constructed crystal phase diagram, and performing efficient growth of the crystal of the biomacromolecule. Also disclosed is an apparatus for implementing the method.

Abstract: The invention refers to a method and apparatus for CVD coating and to a coated body. To improve the mechanical properties of the structure and surface of the body and to make the method and apparatus as simple and cost-effective as possible, it is suggested in the method, in which a layer is deposited on a substrate in a carbon-containing gas atmosphere: that the process parameters be varied during the coating period in such a way that during the coating period a first operating mode and a second operating mode are repeatedly alternated, wherein in the first operating mode a higher carbon over-saturation of the gas atmosphere occurs near the substrate, and in the second operating mode a lower carbon over-saturation of the gas atmosphere occurs near the substrate. In this way, a body can be produced with a substrate and at least one layer deposited on the surface of the substrate, wherein the layer consists of nano-crystalline diamond.