Abstract: A process for fabricating diamond from a starting powder material containing carbon as the principal component, and said process comprising bringing said powder material under high pressure, wherein, said powder material containing carbon as the principal component is a powder material containing C.sub.60 and/or carbon microtubules as the principal component, andsaid powder material is brought under high pressure by applying a gradient pressure to the material, while the portion of the powder material to which maximum pressure is applied is irradiated by a laser beam optionally through a diamond window material. An apparatus for fabricating diamond is also described.

Abstract: The present invention is directed to the production of single-crystal diamond consisting of isotopically pure carbon-12 or carbon-13. The product is believed to be like that diamond product in application Ser. No. 448,469, but is made by a different method. In the present invention, isotopically pure single-crystal diamond is grown on a single crystal substrate directly from isotopically pure carbon-12 or carbon-13. One method for forming isotopically pure single-crystal diamond comprises the steps of placing in a reaction chamber a single crystal substrate heated to an elevated CVD diamond-forming temperature. A gaseous mixture of hydrogen and a hydrocarbon of isotopically pure carbon-12 or carbon-13 is provided in the chamber. The gaseous mixture then is at least partially decomposed in the chamber to form an isotopically-pure single crystal diamond layer on the single crystal substrate disposed therein.

Abstract: A supersonic, direct-current arcjet is designed for expansion into low pressure, the arcjet operates as mixtures of hydrogen and argon to convert molecular hydrogen to atomic hydrogen and direct the atomic hydrogen to a substrate surface. A hydrocarbon (methane or acetylene) is introduced in the arcjet plume where it is converted to hydrocarbon precursors and is directed to the substrate surface where it combines with the atomic hydrogen to produce a diamond film.

Abstract: A swirl flow microwave plasma torch is provided for the growth of diamond films. The swirl flow torch incorporates an injection nozzle that directs reactant gases into a cylindrical flow tube extending through the center of a tuned microwave cavity. The outer surface of the nozzle comprises a contoured, conical shape that causes inert gas, directed tangentially against the outer surface of the nozzle, to swift in a helical path that surrounds and confines the reactant gas emerging from the nozzle. The tuned cavity is coupled to a microwave energy source to generate a highly localized plasma in the reactant gas in the center of the sheathing swirl of inert gas. The swirl of inert gas contains the plasma in a well-defined shape, prevents in-diffusion of undesirable gases, forms a boundary layer to prevent plasma migration, and provides flow tube cooling. The reactant gas flow forces the plasma out of the flow tube to form a plasma flame that can be impinged on a substrate to induce diamond growth.

Abstract: A method of making pure fibers from a parent material utilizing laser energy. A short wavelength laser is used to achieve a diffraction limited focal spot diameter that is smaller than the diameter of the growing fiber. Focused laser beam convergence is used to obtain a fiber growth rate that depends on the fiber tip portion such that the fiber growth rate achieves a value equal to the controlled fiber pulling rate. The present invention achieves vapor-liquid-solid growth of single crystal silicon fibers and whiskers from silane gas and permits the use of other materials in the production of fibers by the vapor-liquid-solid process. The method provides an increase in the allowable ambient pressure and growth temperature and a large and more energy efficient growth velocity as compared to carbon dioxide based laser beam technology.

Abstract: A method of synthesizing single diamond crystals using a carbon source containing at least 99.9 atomic % carbon-12. This is accomplished by graphitizing carbon-12 to form a highly crystalline material which can be used as a carbon source in an ultra high pressure creating apparatus to produce single diamond crystals by means of a temperature difference process.

Abstract: The present invention aims at improving a hot filament CVD method and apparatus capable of enlarging the diamond-forming area in relatively easy manner and utilizing effectively the capacity of a thermoelectron radiation material and provides a process and apparatus for producing diamond with excellent productivity as well as a compact size of apparatus, which can be applied to production on a commercial scale. The feature of the present invention consists in subjecting to decomposition, excitation and activation by a thermoelectron radiation material heated at a high temperature a raw material gas comprising at least one carbon source selected from the group consisting of hydrocarbons, hydrocarbons containing oxygens and/or nitrogens in the bonded groups, carbon oxides, halogenated hydrocarbons and solid carbon, hydrogen and optionally any one of inert gases of Group VIII elements, H.sub.2 O, O.sub.2 and F.sub.