Abstract: A method and system for manufacturing nanocrystalline diamond film on a substrate such as field emission tips. The method involves forming a carbonaceous vapor, providing a gas stream of argon, hydrocarbon and possibly hydrogen, and combining the gas with the carbonaceous vapor, passing the combined carbonaceous vapor and gas carrier stream into a chamber, forming a plasma in the chamber causing fragmentation of the carbonaceous vapor and deposition of a diamond film on the field emission tip.

Abstract: A method of producing diamond crystal growth on a seed crystal is provided. The method includes the steps of providing a seed crystal containing at least one twin plane and re-entrant growth surfaces associated therewith and applying high temperature/high pressure synthesis conditions to the seed crystal to cause diamond growth to occur preferentially on the re-entrant surfaces. The diamond growth on the seed crystal results in a diamond crystal being produced which has an aspect ratio greater than 1.

Abstract: Synthetic gemstones having extraordinary brilliance and hardness are formed from large single crystals of relatively low impurity, translucent silicon carbide of a single polytype that are grown in a furnace sublimation system. The crystals are cut into rough gemstones that are thereafter fashioned into finished gemstones. A wide range of colors and shades is available by selective doping of the crystal during growth. A colorless gemstone is produced by growing the crystal undoped in a system substantially free of unwanted impurity atoms.

Abstract: A method is presented to manufacture substrates for growing monocrystalline diamond films by chemical vapor deposition (CVD) on large area at low cost. The substrate materials are either Pt or its alloys, which have been subject to a single or multiple cycle of cleaning, roller press, and high temperature annealing processes to make the thickness of the substrate materials to 0.5 mm or less, or most preferably to 0.2 mm or less, so that either (111) crystal surfaces or inclined crystal surfaces with angular deviations within .+-.10 degrees from (111), or both, appear on the entire surfaces or at least part of the surfaces of the substrates. The annealing is carried out at a temperature above 800.degree. C. The present invention will make it possible to markedly improve various characteristics of diamond films, and hence put them into practical use.

Abstract: A method of forming a single crystal diamond film in which a single crystal diamond film of large area can be formed at low cost, thereby making it possible to realize a large improvement in the properties of the diamond and also making possible the practical use of diamond in a wide range of applications thereof, said method comprising the steps of: first vapor-depositing a platinum film 2 on a first substrate 1, pressing a second substrate 3 onto the platinum film 2, and carrying out annealing in a vacuum. Next the platinum film 2 and the first substrate 1 are mechanically separated from each other, and the join surface 2a of the platinum film that had once been joined to the first substrate 1 is subjected to a surface scratching treatment, after which diamond is formed by gas-phase synthesis on this join face 2a. A single crystal diamond film is obtained in this way. In the case that the vapor-deposited platinum film has a thickness of no less than 20 .mu.

Abstract: In a method for forming a diamond film by a high-frequency plasma CVD method, an inductive coupling discharge is used and the frequency of a high-frequency wave is set in the range of from 40 to 250 MHz, whereby a starting gas containing carbon is decomposed in a plasma state and a diamond film is formed on a substrate.

Abstract: The present invention improves the adhesive property by pretreating under uniform conditions the substrate surface of metal, ceramics or glass etc. with a poor adhesive property, by accelerating ions under an electric field to the substrate in advance of a diamond-like film forming process. In light of the fact that a diamond-like film forming process by ionized deposition uses thermal electron ionization means and an electric potential is applied to a grid to accelerate ionized hydrocarbon ions, the present invention could attain the aimed purpose by ionizing and then accelerating a bombardment gas such as argon as a pretreatment process in the same apparatus.

Abstract: A diamond electronic device constituted of a diamond crystal formed on a substrate comprises a diamond crystal having the ratio (h/L) of length (h) of the diamond crystal in direction substantially perpendicular to the face of the substrate to length (L) of the diamond crystal in direction parallel to the face of the substrate ranging from 1/4 to 1/1000 and an upper face of the diamond crystal making an angle of from substantially 0.degree. to 10.degree. to the face of the substrate, and a semiconductor layer and an electrode layer provided on the diamond crystal, wherein the diamond crystal serves as a heat-radiating layer.

Abstract: The deposition of high quality diamond films at high linear growth rates and substrate temperatures for microwave-plasma chemical vapor deposition is disclosed. The linear growth rate achieved for this process is generally greater than 50 .mu.m/hr for high quality films, as compared to rates of less than 5 .mu.m/hr generally reported for MPCVD processes.

Abstract: A method and system for manufacturing diamond film. The method involves forming a fullerene vapor, providing a noble gas stream and combining the gas with the fullerene vapor, passing the combined fullerene vapor and noble gas carrier stream into a chamber, forming a plasma in the chamber causing fragmentation of the fullerene and deposition of a diamond film on a substrate.

Abstract: A process for depositing amorphous or nanophase diamondlike carbon (DLC) and a-C:H carbon/hydrogen films with variable and controllable properties on the surface of a substrate is disclosed. The process utilizes a combined hydrocarbon ion beam and plasma-activated hydrocarbon gaseous radical flux produced by an end-Hall ion source to yield a film with good electron-emissivity characteristics or high hardness and good optical transparency, as desired. A second ion source providing a beam of argon ions above or together in nitrogen is optionally directed at the substrate for cleaning prior to deposition and for ion-assisted deposition during deposition or for doping.

Abstract: A diamond crystal forming method with which a diamond crystal is formed on a substrate by a sputtering process uses high-frequency energy in the frequency range of 40 MHz to 250 MHz to form plasma.

Abstract: A flat free-standing diamond film is produced by growing alternately at least one pair of a potential-concave diamond layer and a potential-convex diamond layer on a non-diamond substrate and eliminating the substrate. The potential-concave films are made by a CVD method under a condition (b), which is characterized by of a substrate temperature of 880.degree. C. to 950.degree. C. and a hydrocarbon ratio of 2.5 vol % to 3.5 vol %. The potential-convex films are made by a CVD method under the condition (a) which is charcterized by of a substrate temperature of 800.degree. C. to 850.degree. C. and a hydrocarbon ratio of 0.5 vol % to 1.5 vol %. The condition (a) can make a potential-convex film of a good crystal quality in spite of a slow deposition speed. It is preferable to employ an assembly of thinner potential-convex films and thicker potential-concave films to curtail the total time of synthesis.

Abstract: A process for making diamond and diamond products includes the steps of ianting ions in a diamond substrate to form a damaged layer of non-diamond carbon below the top surface of the substrate, heating the substrate to about 600-1200.degree. C. growing diamond on the top surface of the heated substrate by chemical vapor deposition, and electrochemically etching the damaged layer to separate the grown diamond from the substrate along the damage layer. The diamond product consists of a first diamond layer and a second diamond layer attached to the first layer. The second layer contains damage caused by ions traversing the second layer.

Abstract: A method for making a field emitter comprising the steps of providing a projection; electrically biasing the projection; and exposing the electrically biased projection to a hydrocarbon containing plasma to form a layer of diamond nuclei on the projection. The diamond nuclei are relatively inert and have a high nucleation density. The projection is preferably a material capable of forming a carbide, such as (111) oriented silicon. Refractory metals may also be used for the projection. The electrical biasing is preferably at a voltage in a range of about -150 to -250 volts. The hydrocarbon containing plasma preferably comprises a plasma including about 2 to 5% by weight of methane in hydrogen. An intervening carbide layer is preferably formed at a surface of the projection and underlying the layer of diamond nuclei. The field emitter produced by the method and having a relatively high diamond nucleation density is also disclosed.

Abstract: A microelectronic structure including a plurality of spaced apart diamond structures on which a plurality of semiconductor devices may be formed. The semiconductor devices include a semiconducting diamond layer on each of the diamond structures. The diamond structures are preferably oriented relative to a single crystal nondiamond substrate so that the diamond structures have a (100)-oriented outer face for forming the semiconductor devices thereon. The microelectronic structure may be diced into discrete devices, or the devices interconnected, such as to form a higher powered device. One embodiment of the microelectronic structure includes the plurality of diamond structures, wherein each diamond structure is formed of a highly oriented textured diamond layer approaching single crystal quality, yet capable of fabrication on a single crystal nondiamond substrate.

Abstract: The present invention relates to a diamond vibration plate for a speaker having high sound velocity or E/.rho. and which is superior in high-pitched tone performance. Conventional diamond vibration plates which are made overall from crystalline diamond were apt to split or break at a flange due to the high rigidity. According to the present invention periphery of the flange is circularly cut by laser beams to eliminate rugged circumference. The laser treatment also converts the crystalline diamond of the flange into non-diamond carbon. The resulting vibration plate with a central spherical part of crystalline diamond and a periphery of a flange of non-diamond carbon excels both in high frequency property and mechanical strength.

Abstract: Broadly, the present invention is directed to polycrystalline diamond of improved thermal conductivity. The novel polycrystalline diamond consists essentially of at least 99.5 wt-% isotopically-pure carbon-12 or carbon-13. The inventive polycrystalline diamond is formed from at least 99.5 wt-% isotopically-pure carbon-12 or carbon-13. Single-crystal isotopically-pure carbon-12 and carbon-13 diamond are known to possess improved thermal conductivity. Polycrystalline diamond, however, possesses lower thermal conductivity patterns deleteriously impacted by, for example, impurities, isotopic effects, and grain boundary scattering. In fact, grain boundary scattering would lead the skilled artisan to believe that the thermal conductivity of polycrystalline diamond would be substantially unaffected by the isotopic nature of the diamond itself.

Abstract: The present invention provides a method for producing a synthetic diamond thin film which comprises decomposing with microwave a raw material gas containing at least one compound selected from the group consisting of carbon monoxide, carbon dioxide and a hydrocarbon and hydrogen or hydrogen and oxygen to produce a plasma and contacting the plasma with the surface of a substrate held outside the area irradiated with the microwave to form a diamond thin film on the substrate.The present invention further provides an apparatus for producing a synthetic diamond thin film and a synthetic diamond thin film and devices in which the synthetic diamond thin film is used.

Abstract: A method for bonding CVD diamond to silicon. The first step of the method involves subsequently depositing a transition lawyer 48 on a diamond layer 46 of a composite wafer 40. Once the transition layer 48 has been deposited, wafer layer 50 comprised of silicon, is bonded or deposited to the transition layer 48. In this method, the transition layer 48 comprises carbon and silicon, with the portion of the transition layer 48 adjacent the diamond layer 46 being comprised of substantially carbon and the portion of the transition layer 48 adjacent the wafer layer 50 being comprised of substantially silicon. With the method, sharp interfaces and poor thermal matches between the layers in the composite wafer can be minimized. As a result, the layers in the composite wafer are less likely to delaminate and the composite wafer is likely to warp or bow due to mismatched film stresses.

Abstract: The invention relates to a composite structure for electronic components comprising a growth substrate, an intermediate layer having substantially a crystallographic lattice structure arranged on the growth substrate, and a diamond layer applied on top of the intermediate layer, and to a process for producing a composite structure of this type. In order to obtain a diamond layer of highest quality, the intermediate layer has substantially a zinc blende or diamond or a calcium fluoride structure, in which at the outset of the intermediate layer the difference between the lattice constant of the intermediate layer and the lattice constant of the growth substrate, relative to the lattice constant of the growth substrate, is less than 20%, in particular less than 10%, and in which at the transition from the intermediate layer to the diamond layer for the lattice constant of the intermediate layer and the lattice constant of the diamond layer the value of the expression.vertline.(n*a.sub.ZS -m*a.sub.D).vertline.

Abstract: Diamond materials are formed by sandwiching a carbon-containing material in a gap between two electrodes. A high-amperage electric current is applied between the two electrode plates so as cause rapid-heating of the carbon-containing material. The current is sufficient to cause heating of the carbon-containing material at a rate of at least approximately 5,000.degree. C./sec, and need only be applied for a fraction of a second to elevate the temperature of the carbon-containing material at least approximately 1000.degree. C. Upon terminating the current, the carbon-containing material is subjected to rapid-quenching (cooling). This may take the form of placing one or more of the electrodes in contact with a heat sink, such as a large steel table. The carbon-containing material may be rapidly-heated and rapidly-quenched (RHRQ) repeatedly (e.g., in cycles), until a diamond material is fabricated from the carbon-containing material.

Abstract: In a method of manufacturing diamond semiconductor mainly composed of carbon, a technique is provided which is free from the possibility of destruction of diamond structure, permits n-type doping into diamond and further permits high concentration n-type doping. In this method of diamond semiconductor manufacture, lithium atoms (which may be produced from a nitrogen compound of lithium, for instance lithium azide) is doped using ECR plasma into diamond 102 with the surface thereof having been cleaned, if necessary.

Abstract: A novel apparatus and method for the cyclic growth-etch deposition of diamond on a substrate by flame chemical vapor deposition (CVD) is developed. The cyclic growth-etch diamond deposition is accomplished by placing a suitable substrate to be coated under a CVD flame and providing a disk or face plate or other shapes having one or more teeth (or holes) wherein upon rotation of the disk, or face plate, or other shape, the teeth attached to the disk, or face plate, or other shape obstruct the path of the CVD flame from contacting the substrate at a desired time scale of .tau..sub.growth and t.sub.cycle to produce high quality (FWHM of 1-3.5 cm.sup.-1) diamond.

Abstract: A method produces a columnar, quasi-oriented diamond that exhibits the enhanced optical, thermal and mechanical properties of gem diamonds. This method allows diamond growth rates that are faster than those possible with high pressure diamond growth from a single diamond seed. The columnar, quasi-oriented diamond contains lower grain boundary density than chemically vapor deposited diamond.

Abstract: A surface acoustic wave element has a diamond layer, a piezoelectric thin film formed on the diamond layer, and a pair of electrodes for generating a surface acoustic wave having a specific wavelength and extracting the surface acoustic wave, wherein at least one electrode is a copper electrode epitaxially grown on the surface of the diamond layer. To manufacture this surface acoustic wave element, after the diamond layer is formed on a substrate by epitaxial growth, the copper electrodes each having the predetermined shape are formed on the surface of the diamond layer by epitaxial growth. Since the copper electrodes formed on the diamond layer consist of high-quality single crystal copper, resistances to electromigration and stress migrations can be increased. As a result, there is provided an excellent surface acoustic wave element free from electrical defects caused by degradation and failure of the copper electrodes or free from degradation of the electrical characteristics.

Abstract: A method for creating a uniform thin film of a high surface energy material on a substrate comprising the steps of providing an oppositely charged surface on the substrate, if such does not exist, from that of particles of the high surface energy material, exposing the substrate to an aqueous colloidal suspension of particles composed of the high surface energy material to adsorb seed particles onto the surface of the substrate, and then depositing a uniform thin film of the high surface energy material by chemical vapor deposition onto the seeded substrate.

Abstract: The present invention relates to production of superhard materials.A carbon composition contains 18-38 wt. % of diamond having particle size of 40-120 .ANG. and graphite to make up 100 wt. % having particle size of 200-1000 .ANG..A process for producing the carbon composition consists in detonating a carbon-containing explosive having a negative oxygen balance, in a cooling medium containing 40-60 vol. % of carbon dioxide gas, not more than 2 vol. % of free oxygen, and a neutral gas to make up 100 vol. %.The present carbon composition will find predominant application as an abrasive for superfinish polishing.

Abstract: A method of forming a highly oriented diamond film having a reduced thickness with a high quality at a low cost. Surface of a single crystal substrate is cleaned, and is then left in a high vacuum of 10.sup.-6 Torr or less at a temperature between room temperature and 800.degree. C. for 15 min for releasing gas molecules absorbed on the surface of the substrate. The surface of the substrate is then processed using carbon-containing plasma for forming a barrier of obstructing a carbon component within the substrate. After that, an electric field is applied across the substrate and plasma for allowing a current to flow thereacross for a specified time, to form nuclei of diamond for synthesis of a diamond film. Thus, highly oriented diamond particles or films, in which crystal orientations thereof are epitaxial to the substrate, are synthesized.

Abstract: A plurality of single-crystalline diamond plates having principal surfaces consisting essentially of {100} planes are prepared. The diamond plates are so arranged that the respective principal surfaces are substantially flush with each other. In this arrangement, an angle formed by crystal orientations of the principal surfaces between adjacent plates is not more than 5.degree., a clearance between the adjacent plates is not more than 30 .mu.m, and a difference in height of the principal surfaces is not more than 30 .mu.m between the adjacent plates. To secure this arrangement, the plurality of diamond plates are joined to each other by depositing diamond on the plates to form a single large diamond plate. After such joining, the principal surfaces of the diamond plates are polished in order to eliminate steps or height differences. Then, diamond is epitaxially grown on a polished surface of the large diamond plate from a vapor phase.

Abstract: A method is disclosed for producing an oriented diamond film on a single crystal silicon substrate which comprises preconditioning the surface of the substrate by exposing the surface of the substrate to a carbon-containing plasma, subjecting the preconditioned surface to electrical bias to effect nucleation of the substrate surface for oriented diamond crystal growth while monitoring the completion of nucleation over the surface of the substrate and depositing crystalline diamond on the nucleated surface from a carbon-containing plasma. The resulting structure comprises a crystalline diamond film on the silicon substrate characterised by oriented columnar diamond crystals which form a substantially uniform tessellated pattern. In practice, the columnar crystals normally have a generally quadrilateral shape whose sides are mutually aligned.

Abstract: A class of nanocomposite amorphous materials consisting of interpenetrating random networks of predominantly sp.sup.3 bonded carbon stabilized by hydrogen, silicon stabilized by oxygen, and, optionally, random networks of metal elements from groups 1-7b and 8b of the periodic table.

Abstract: A method of forming synthetic diamond or diamond-like films on a substrate surface. The method involves the steps of providing a vapor selected from the group of fullerene molecules or an inert gas/fullerene molecule mixture, providing energy to the fullerene molecules consisting of carbon-carbon bonds, the energized fullerene molecules breaking down to form fragments of fullerene molecules including C.sub.2 molecules and depositing the energized fullerene molecules with C.sub.2 fragments onto the substrate with farther fragmentation occurring and forming a thickness of diamond or diamond-like films on the substrate surface.

Abstract: A method for making an oriented diamond film includes the steps of saturating a surface region of a transition metal substrate, capable of dissolving carbon, with carbon and hydrogen; forming oriented diamond nuclei on the saturated surface region of the substrate; and growing diamond on the oriented diamond nuclei to form the oriented diamond film. It is theorized that the saturation forms transition metal-carbon-hydrogen surface states (Metal.sub.x -C.sub.y --H.sub.z, where x+y+z=1) on the transition metal substrate while suppressing formation of graphite. Diamond may then be deposited onto the oriented diamond nuclei by CVD techniques to thereby form an oriented diamond film on the nondiamond substrate. The nondiamond substrate is preferably a single crystal transition metal capable of dissolving carbon. The transition metal is preferably selected from the group consisting of nickel, cobalt, chromium, magnesium, iron, and alloys thereof.

Abstract: A method is disclosed for producing large single crystals. In one embodiment, a single crystal of electronic grade diamond is produced having a thickness of approximately 100-1000 microns and an area of substantially greater than 1 cm..sup.2. and having a high crystalline perfection which can be used in electronic, optical, mechanical and other applications. A single crystalline diamond layer is first deposited onto a master seed crystal and the resulting diamond layers can be separated from the seed crystal by physical, mechanical and chemical means. The original master seed can be restored by epitaxial growth for repetitive use as seed crystal in subsequent operations. Large master single crystal diamond seed can be generated by a combination of oriented smaller seed crystals by lateral epitaxial fusion. Since there is no limit to how many times seed combination step can be repeated, large diamond freestanding wafers comparable in size to silicon wafers can be manufactured.

Abstract: In contrast to previous approaches, the present inventors have discovered that diamond films can be grown by carbon CVT reactions occurring exclusively in the exothermic regime, where the lower temperature (<1500.degree.C.) conditions considerably simplify the equilibrium gas phase chemistry. Under these conditions of a small temperature gradient and short transport distance between the source and substrate, supersaturation of the gas phase with regard to graphite and diamond does not attain sufficiently high values to induce spontaneous homonucleation of graphite and diamond in the gas phase. With this process, temperatures as low as 680.degree.C. were found to be sufficient to induce the growth of continuous diamond films free of non-diamond allotropes.

Abstract: Chemical vapor deposition of diamond with <100> orientation and (100) growth facets is performed at an increased growth rate and affords cubic diamond crystals when a gas mixture comprising hydrogen, a hydrocarbon such as methane and specific minor amounts of oxygen and an inert gas, preferably predominantly nitrogen, is employed.

Abstract: A method for making a quasi-single crystal diamond is provided. Small diamond granules, like islands, are epitaxially grown on a single crystal substrate having a lattice constant which is similar to that of diamond. A deposition layer is formed on the island diamond granules. The initial substrate is eliminated. Diamond is grown on the deposition layer having diamond granules to make a diamond film having a certain thickness. The initially-grown diamond granules which have the same crystallographical direction align the direction of crystals of the latter-grown diamond by playing a role of seed crystals.

Abstract: Single-crystal diamond consisting of isotopically pure carbon-12 or carbon-13 has been found to have a thermal conductivity higher than that of any substance previously known, typically at least 40% higher than that of naturally occurring IIA diamond. It may be prepared by a method comprising comminution of diamond of high isotopic purity, such as that obtained by low pressure chemical vapor deposition employing an isotopically pure hydrocarbon in combination with hydrogen, followed by conversion of the comminuted diamond to single-crystal diamond under high pressure conditions.

Abstract: A method for preparing a graphite intercalation compound having a metal or a metal compound inserted between adjacent graphite layers, comprising simultaneously introducing a mixture of a vapor of both a hydrocarbon compound and an organo metallic compound together with a carrier gas into a reactor, and decomposing said hydrocarbon compound and said organo metallic compound on a single-crystalline substrate at a relatively low temperature.

Abstract: A method of growing a large single crystalline diamond film, in which a nickel substrate is disposed within a diamond growth chamber. After air has been evacuated from the chamber and the substrate has been heated to a temperature exceeding 1145 Celsius, atomic hydrogen is continuously generated from hydrogen gas supplied to the chamber and accelerated toward the substrate, implanting hydrogen atoms in the top substrate surface and converting it to a liquid film of nickel hydride. Then one of two layers of diamond particles of two to three nanometer cross section is deposited on the liquid nickel hydride film, whereby the diamond particles arrange themselves on the liquid nickel hydride film to their lowest free energy state, forming a nascent contiguous single-crystalline diamond film. Thereafter diamond is homoepitaxially grown on the nascent contiguous single-crystalline diamond film to the desired thickness.

Abstract: A single crystal diamond film having good crystallinity and electrical and optical characteristics is produced by a method which comprises steps of decomposing a raw material gas comprising a hydrogen gas, a carbon containing compound and an oxygen-containing compound and growing a single crystal diamond film on a substrate in a vapor phase.

Abstract: A method and apparatus for enhancing the nucleation of diamond by pretreating a substrate by electrically biasing a diamond film adjacent the substrate while exposing the substrate and the thus biased diamond film to a carbon-containing plasma. The bias pretreatment may be maintained for a time period in the range of about 1 hour to 2 hours to achieve a high diamond nucleation density. Alternatively, the biasing may be continued until diamond film formation is indicated by a change in reflectivity of the surface of the substrate. The biasing pretreating may be used to nucleate diamond heteroepitaxially on a substrate having a surface film formed of a material having a relatively close lattice match to diamond, such as .beta.-silicon carbide. The apparatus includes a laser reflection interferometer to monitor the surface of the substrate.

Abstract: A single crystal diamond film having good electrical characteristics is produced by a method which comprises steps of decomposing a raw material gas comprising a hydrogen gas and a carbon-containing compound and epitaxially growing a single crystal diamond film on a single crystal substrate in a vapor phase, wherein a molar ratio of the carbon atoms in the carbon-containing compound to the hydrogen is from 2:100 to 10:100 and a lattice constant of the single crystal substrate satisfies the following relation:.vertline.(a-a.sub.0)/a.vertline..times.100.ltoreq.20 (I)wherein a.sub.0 is the lattice constant of diamond (3.567 .ANG.) and a is a lattice constant of the single crystal substrate.

Abstract: Friable abrasive particles, particularly diamond particles, are produced by causing suitable material, such as a chloride salt, to be occluded in the particles during their manufacture and then removing some of this material, for example, by leaching.

Abstract: A method of epitaxially growing a surface layer on a substrate including the steps of coating the substrate surface, with a meltable film, melting the film and implanting ions into he melted film, to deposit ion material onto the coated substrate surface.

Abstract: A diamond-like thin film of good quality is prepared homogeneously and fast in a deposition. A mesh-like acceleration electrode is provided at the opening of a chamber including a filament, and a plasma is generated in the chamber. Because the chamber is isolated electrically from the electric system of the apparatus, the high density and the equilibrium state are maintained, and the plasma density and the potential are homogenized around the mesh-like electrode. In this state, a bias potential is applied to the substrate, and the ions are accelerated according to the potential difference between the plasma and the substrate to deposit a diamond-like thin film on the substrate. Preferably, a negative potential electrode is provided before or around the substrate. Further, an insulating member is provided to surround a flight path of ions between the chamber and the substrate.

Abstract: Granular diamond suitable for use as an abrasive grain for polishing is synthesized from gaseous phase by a process for the synthesis of granular diamond, comprising subjecting a mixed gas containing an organic compound and hydrogen to a treatment to form plasma and depositing diamond on substrate grains dispersed and fluidized in the resulting plasma space, characterized in that the substrate grains are dispersed and fluidized by the mixed gas fed at a flow rate of at least the terminal velocity of the grains and an AC or DC electric field is applied to a zone whose grain concentration in the space is in the range of 1 to 20% by volume.

Abstract: A method of forming synthetic hydrogen defect free diamond or diamond like films on a substrate. The method involves providing vapor containing fullerene molecules with or without an inert gas, providing a device to impart energy to the fullerene molecules, fragmenting at least in part some of the fullerene molecules in the vapor or energizing the molecules to incipient fragmentation, ionizing the fullerene molecules, impinging ionized fullerene molecules on the substrate to assist in causing fullerene fragmentation to obtain a thickness of diamond on the substrate.

Abstract: A diamond film FET according to the present invention comprises a semiconducting diamond layer, a gate, a source, and a drain, wherein said semiconducting diamond layer comprises a semiconducting highly-oriented diamond film grown by chemical vapor deposition, and at least 80% of the surface area of said diamond film consists of either (100) or (111) crystal planes, and the differences {.DELTA..alpha., .DELTA..beta., .DELTA..gamma.} of Euler angles {.alpha., .beta., .gamma.}, which represent the orientations of either (100) or (111) crystal planes, simultaneously satisfy the following relations between the adjacent crystal planes: .vertline..DELTA..alpha..vertline..ltoreq.5.degree., .vertline..DELTA..beta..vertline..ltoreq.5.degree. and .vertline..DELTA..gamma..vertline..ltoreq.5.degree..