Abstract: In a method for cleaning a copper surface of a semiconductor wafer or article, nitrogen gas is bubbled or dissolved into a strong alkaline solution, displacing dissolved oxygen from the solution. A nitrogen gas environment is provided over the copper surface. The alkaline solution is then applied to the copper surface. The copper etch rate is greatly reduced. The method is useful in removing residual polishing slurry after a chemical-mechanical polishing step, and for removing residues left in via holes after plasma etching.

Abstract: In a method of washing contaminated particulate matter, a screw conveyor is disposed in a cleaning tank for rotation around a substantially vertical axis so that the lower part of the screw conveyor is positioned under the surface of the cleaning water and the upper part of the screw conveyor is positioned above the surface of the cleaning water. Under the surface of the water, the grains of the particulate matter are contacted with each other with sludge being interposed therebetween to remove at least a part of contamination substances from the surface of the grains of the particulate matter and to wash off the substances into the water.

Abstract: Method and apparatus for cleaning semiconductor devices and other workpieces using an aqueous rinse solution which is de-oxygenated by passing the aqueous rinse solution and a carrier gas through an osmotic membrane degasifier. A cleaning chamber is also disclosed for carrying out the cleaning method.

Abstract: Apparatuses for cleaning wafers used in integrated circuit devices comprise: (1) a dry cleaning section comprising inert gas storage bath, a hydrogen fluoride gas storage bath, and a vapor storage bath containing a component selected from the group consisting of water vapor, alcohol vapor, and mixtures thereof and a gas mixer, wherein the inert gas storage bath, the hydrogen fluoride gas storage bath, and the vapor storage bath are in communication with the gas mixer; (2) a wet cleaning section comprising a first bath for storing a fluoride; a second bath for storing a liquid alcohol; and a cleaning solution storage bath in communication with the first bath and second bath, wherein the fluoride and the liquid alcohol form a cleaning solution which is stored in the cleaning solution storage bath; and (3) a common cleaning bath positioned between and in communication with the dry cleaning section and the wet cleaning section.

Abstract: Provided is a method for cleaning hydrophobic surfaces, such as low K dielectric organic or inorganic surfaces as well as metallization surfaces of a semiconductor wafer. The method includes: (a) applying a surfactant solution to the surface; (c) scrubbing the surface; and (c) spin-rinsing the surface of the substrate using de-ionized water to complete a removal of any contaminants from the surface. If needed, the surfactant solution can be mixed with a chemical enhancer, and the scrubbing can be performed in a brush system. The brush system may be configured to apply DI water using a through the brush (TTB) technique. The surfactant solution can be applied either using a drip technique or using the TTB technique.

Abstract: To provide a photomask cleaning method which brings about a high effect of removing residual sulfuric acid or foreign objects and can remove foreign objects effectively without fluctuating the transmission or other properties of the light-shielding layer (MoSiON film) in a phase shift photomask.

Abstract: A blocking plate is disposed to face a substrate which is held by substrate holding device. A processing fluid is supplied to a surface of the substrate while supplying inert gas into a space between the substrate and the blocking plate. Since the inert gas flows along the surface of the substrate within the space between the substrate and the blocking plate, no turbulence which whirls upward is created at the surface of the substrate. This prevents the pollutants from adhering to the substrate and improves the quality of the substrate.

Abstract: There is disclosed a semiconductor device cleaning method involving placing a cleaning solution containing 24 wt. % sulfuric acid, 5 wt. % hydrogen peroxide, 0.02 wt. % hydrogen fluoride, 0.075 wt. % n-dodecylbenzenesulfonic acid, and water into a quartz processing vessel and heating to no more than 100° C. A silicon wafer is immersed into the cleaning solution for 10 minutes and then washed by demineralized water for about 7 minutes. The surfaces of foreign particles on the wafer are etched by hydrogen fluoride, and n-dodecylbenzenesulfonic acid combines with the etched surfaces by sulfate ester bonding. The apparent diameter of the foreign particles increases and the repulsive force caused by zeta potential etc. increases, so that the foreign particles are unlikely to adhere to the surface of the silicon wafer permitting the foreign particles to be easily washed away in a water cleaning step.

Abstract: A semiconductor wafer processing system with a multi-tasking sequencer control that performs an automatic cleaning process for the process chamber or chambers of the system.

Abstract: An ammonium or amide aqueous solution without oxidzers for cleaning semiconductor wafers with exposed TiN (103). Effective particulate (109) removal occurs without the standard use of hydrogen peroxide which would attack the TiN (103). Solution temperatures up to 90° C. plus applied ultrasonic energy enhance the cleaning efficiency. Surfactants may be included.

Abstract: A heated high pressure air and/or a high pressure water are spouted through nozzles. Therefore, the coated layer is removed without crushing the bumper unlike in the conventional method, and therefore, a plurality of process steps can be skipped. Thus the bulk of the apparatus can be reduced, the operating cost can be lowered, and the environment can be protected. The method for removing a coated layer includes the step of installing a bumper to be subjected to a removal of the coated layer. Then the coated layer is removed from the bumper by spouting water and/or a pre-heated air to the bumper. Then the bumper is carried to a predetermined psition after removing the coated layer, and then the bumper is detached. The apparatus includes an installing/detaching means for installing/detaching the bumper to be subjected to a removal of the coated layer.

Abstract: For cleaning a wafer by a cleaning apparatus, a cleaning liquid is contained in a cleaning bath. Leaving two brushes open, the wafer is inserted to the cleaning bath, placed on oscillation and rotation rollers and retained by the rollers. The brushes are closed and the wafer is held by the brushes. Next, the two brushes are rotated while the wafer is oscillated and rotated by the rollers and so on. Furthermore, ultrasonic vibrations are applied to the cleaning liquid in the cleaning bath by an ultrasonic generator. Scrub cleaning with the two brushes and ultrasonic cleaning by ultrasonic vibrations are thereby performed on the wafer.

Abstract: The present invention provides a caddy for holding and washing golf balls. The caddy includes a plurality of enclosure walls defining a cavity. At least one of the walls has openings allowing fluid to enter the cavity to clean the golf balls. Top and bottom openings are also provided to allow balls to be placed into and removed from the cavity, respectively. In one embodiment, the bottom opening is closed by a door to prevent balls from leaving the cavity. In a second embodiment, a deformable elongated opening retains the balls in the cavity. The opening can be deformed by the application of a force to allow balls to selectively be removed from the cavity. A connector is also provided to secure the caddy with a support structure.

Abstract: A method of cleaning a wafer carrier utilizes two isolated fluidic circuits. The wafer carrier having an interior and an exterior. The carrier is sealingly attached to a cleaning apparatus having separate isolated areas, one isolated area including the interior and the other the exterior. Fluid of the first fluidic circuit is sprayed on the interior and fluid from the second circuit is sprayed on the exterior reducing cross contamination.

Abstract: A method of removing particles adhering to a surface of a semiconductor wafer including the steps of: providing a container having a drain valve; positioning the semiconductor wafer in the container; directing a jet stream consisting of water against the surface of the semiconductor wafer; removing particles adhering to the surface of the semiconductor wafer by scrubbing the surface of the semiconductor wafer with a brush while the jet stream of water is directed against the surface of the semiconductor wafer; closing the drain valve while the jet stream of water is directed against the semiconductor wafer, wherein the water accumulates in the container to thereby completely immerse the brush and the semiconductor wafer in the water in the container; and maintaining the brush and the semiconductor wafer completely immersed in the water from the jet stream for a predetermined period of time.

Abstract: A method for cleaning polyethylene terephthalate containers including contacting the PET container with an alkaline wash solution having a temperature ranging of less than about 60° C. is disclosed. The alkaline wash solution is formulated from a first concentrate, a second concentrate, an alkalinity source, and a balance of water. The first concentrate preferably has a first nonionic surfactant, a first builder, and acid in an amount effect to provide a phase stable solution. The second concentrate preferably has a second nonionic surfactant and a second builder. The first and second concentrate are present in the wash solution in a concentration ranging from about 0.3 wt. % to 2.0 wt. %. Preferably, the first nonionic surfactant has a cloud point ranging from about 5° C. to 60° C.

Abstract: A method is disclosed for removing pad nodules. The method provides a wafer comprising pads and pad nodules which are formed on said pads, wherein said pads are made from a metal selected from the group consisting of aluminum and an aluminum-copper alloy. Then, the method dips the wafer into deionized water for removing the pad nodules. Thereafter, the method spin-dries the wafer and coats an alkaloid developer on the wafer for further removing the pad nodules. Finally, the method removes the alkaloid developer from the wafer and bakes the wafer.

Abstract: A method of removal of polymers of the type including bromine, chlorine, silicon, and carbon, present on a semiconductor wafer partly covered with resist, including of rotating the wafer in its plane around its axis, in an enclosure under a controlled atmosphere, at ambient temperature, including the steps of rotating the wafer at a speed included between 500 and 2000 CPM in an enclosure filled with nitrogen; sprinkling the wafer with water, substantially at the center of the wafer; introducing hydrofluoric acid during a determined cleaning time, while maintaining the sprinkling; and rinsing the wafer by continuing the sprinkling to remove any trace of hydrofluoric acid from the wafer, at the end of the cleaning time.

Abstract: A method for the removing of plasma etch residues on a substrate comprising the steps of: (i) contacting the substrate with a cleaning composition, and (ii) contacting the substrate with ozonated water. The preferred cleaning composition has a pH from 2 to 6 and comprises: (A) water; (B) at least one selected hydroxylammonium compound; and (C) at least one basic compound; and optionally (D) a chelating stabilizer; and optionally (E) a surfactant.

Abstract: This invention concerns a process for removing liquid and/or solid impurities adhering to a workpiece (6), in particular oils, emulsions and/or chips, the workpiece (6) being secured in an apparatus and made to oscillate. The new process is characterized in that at least one nozzle (4) simultaneously applies suction to the workpiece (6) by means of a stream of directed air. Moreover, the invention also concerns devices for carrying out this process.

Abstract: The present invention is directed to wet processing methods for the manufacture of electronic component precursors, such as semiconductor wafers used in integrated circuits. More specifically, this invention relates to methods of manufacturing electronic component precursors using liquids of varying temperature.

Abstract: A method for determining wafer cleanliness by fluorometric monitoring of the impurities in the semiconductor chip wafer rinse solution. A clean chip is indicated by a leveling off of increased concentration of impurities as the rinsing of the chip progresses. A method for optimizing reuse or recyling of the water discharged from the rinse process which accurately measures the contaminants in that water.

Abstract: A system for cleaning disc drive components includes a rotary support member for receiving an assembled disc drive component. A rotary drive motor is coupled to the rotary support member for rotating the rotary support member and disc drive motor supported thereon together at a rotation speed to impart a centrifugal force on any excess lubricant contained by the disc drive motor of sufficient magnitude to draw the excess lubricant from the disc drive motor. The system may also or alternatively include an enclosure defining an interior having an oxygen-containing environment. A support platform is disposed within the oxygen-containing environment of the interior of the enclosure, for supporting a disc drive component within the oxygen-containing environment of the enclosure, for example, after the component is removed from the rotary support member.

Abstract: In a method for cleaning a copper surface of a semiconductor wafer or article, nitrogen gas is bubbled or dissolved into a strong alkaline solution, displacing dissolved oxygen from the solution. A nitrogen gas environment is provided over the copper surface. The alkaline solution is then applied to the copper surface. The copper etch rate is greatly reduced. The method is useful in removing residual polishing slurry after a chemical-mechanical polishing step, and for removing residues left in via holes after plasma etching.

Abstract: A method for drying workpieces in accordance with our invention includes the step of immersing the workpieces in a liquid, holding the workpieces with a first holding mechanism, slowly draining the liquid from the container until a first portion of the workpieces is exposed and dried, holding the workpieces with a second holding means at the first portion, and draining the remainder of the liquid from the container. Because of this, a drying portion of the workpiece is not held by a wet holding mechanism.

Abstract: A cleaning method to inhibit the adhesion of micro particles to a member to be cleaned by decreasing an amount of generation of bubbles. In a method for cleaning a member to be cleaned by dipping the member into a cleaning bath to which a hydrochloric acid-hydrogen peroxide mixture comprising hydrochloric acid, hydrogen peroxide and water is supplied through a filter and a supplying port; the improvement is that a temperature of the hydrochloric acid, hydrogen peroxide mixture is controlled within the range of 20°to 45° C.

Abstract: A method and device for cleaning vertically suspended lamellar blinds in collapsed state, is provided having a supply unit with a moveable supply container and functional elements for generating a fluid stream as well as a suspended spay device which is supported by the lamellae and comprises a spray head and a jacket foil enclosing the lamellar blind. The supply container is designed to be used separately with a washing solution or a rinse solution and is equipped with a pump, a pressurized line leading to the spray head and a return line. The pressurized line comprises a dual manifold disposed at the top and the return line has a connection at the top as well as a connection at the bottom.

Abstract: An apparatus including a dispense line, a solvent line, and a solvent vapor bath having a purge section is disclosed. The purge section of the apparatus has a cleaning member disposed therein containing at least one dispense hole corresponding to the dispense line. The purge section contains a plurality of ports to receive the dispense line and the solvent line. The solvent line is directed toward the cleaning member when the dispense line extends through the dispense hole. A method of cleaning a dispense line is also disclosed. In the method, a solvent vapor bath comprising a purge region having a cleaning member disposed therein and containing at least one dispense hole is provided. The purge region contains a plurality of ports to receive the dispense line and a solvent line, the solvent line being directed toward the cleaning member when the at least one dispense line extends through the at least one dispense hole.

Abstract: An ultrasonic bath (30) is arranged below a wafer processing bath (10). Wafers (40) are processed while ultrasonic waves are transmitted from the ultrasonic bath (30) to the wafer processing bath (10). The wafers (40) are processed while being entirely dipped into the wafer processing bath (10) and rotated by wafer rotating rods (53).

Abstract: A heated high pressure air and/or a high pressure water are spouted through nozzles. Therefore, the coated layer is removed without crushing the bumper unlike in the conventional method, and therefore, a plurality of process steps can be skipped. Thus the bulk of the apparatus can be reduced, the operating cost can be lowered, and the environment can be protected. The method for removing a coated layer includes the step of installing a bumper to be subjected to a removal of the coated layer. Then the coated layer is removed from the bumper by spouting water and/or a pre-heated air to the bumper. Then the bumper is carried to a predetermined psition after removing the coated layer, and then the bumper is detached. The apparatus includes an installing/detaching means for installing/detaching the bumper to be subjected to a removal of the coated layer.

Abstract: A method for decontaminating the copper surfaces (e.g. circuits) of an electronic card from copper salts which can be formed after the soldering of the electronic components onto the substrate employing a water free solution which comprises an alcohol and at least one neutral ammonium salt of an organic acid.

Abstract: A storage apparatus for photoresist dispensing nozzles has solvent inlets positioned directly opposite the nozzles when the nozzles are in their home positions. Photoresist cleaning solvent is introduced through these inlets at periodic intervals and directly applied on the nozzles to keep them clean.

Abstract: A method of washing pre-expanded particles having a substantially water insoluble inorganic compound attached thereto by contacting the pre-expanded particles with an aqueous washing solution of a water soluble compound. The water soluble compound has a solubility with water of at least 1 g/100 g of water and has 1-500 surface bonding functional groups and 1-500 hydrophilic functional groups. At least one of the surface bonding functional groups of the water soluble compound attaches to the water insoluble inorganic compound.