Abstract: A cleaning material is applied to a surface of a substrate. The cleaning material includes one or more polymeric materials for entrapping contaminants present on the surface of the substrate. A rinsing fluid is applied to the surface of the substrate at a controlled velocity to effect removal of the cleaning material and contaminants entrapped within the cleaning material from the surface of the substrate. The controlled velocity of the rinsing fluid is set to cause the cleaning material to behave in an elastic manner when impacted by the rinsing fluid, thereby improving contaminant removal from the surface of the substrate.

Abstract: A method and apparatus for cleaning have been disclosed.

Abstract: An apparatus and method are provided to treat for example a semiconductor wafer substrate wherein a delivery means for heat, a cryogen, and a fluid chemical reactant, is disposed in a chamber in which the substrate is disposed for at least one surface of the substrate to be cleaned in the chamber. The chamber may also consist of a plurality of stations for chemically treating, providing cryogen to the substrate to effect such cleaning and heating. Air is provided in the chamber in a laminar flow substantially parallel to the surface being treated to remove displaced material from the surface and prevent redeposition of the material on the substrate surface.

Abstract: An apparatus, system and method for preparing a surface of a substrate using a proximity head includes applying a non-Newtonian fluid between the surface of the substrate and a head surface of the proximity head. The non-Newtonian fluid defines a containment wall along one or more sides between the head surface and the surface of the substrate. The one or more sides provided with the non-Newtonian fluid define a treatment region on the substrate between the head surface and the surface of the substrate. A Newtonian fluid is applied to the surface of the substrate through the proximity head, such that the applied Newtonian fluid is substantially contained in the treatment region defined by the containment wall. The contained Newtonian fluid aids in the removal of one or more contaminants from the surface of the substrate. In one example, the non-Newtonian fluid can also be used to create ambient controlled isolated regions, which can assist in controlled processing of surfaces within the regions.

Abstract: A method and apparatus for removing a first liquid from a surface of a substrate is provided. A second liquid is supplied to at least part of a surface of a substrate having a rotary movement. The rotary movement has a center of rotation and an edge of rotation. The second liquid is directed from the center of rotation to the edge of rotation using a nozzle. A dry zone is created on the substrate as the position of the spray moves from the center of rotation to the edge of rotation. As a result, the first liquid and the second liquid are removed from the surface of the substrate.

Abstract: A liquid processing apparatus includes: a processing part 80 configured to process an object to be processed by a process liquid; a supply path 1 connected to the processing part 80, the supply path 1 being configured to guide the process liquid to the processing part 80; a solvent supply part 7 configured to supply a solvent to the supply path 1; and a chemical-liquid supply part 5 configured to supply a chemical liquid to the supply path 1 through a chemical-liquid supply path so as to generate a chemical liquid diluted with the solvent. A measuring part 10, which is configured to measure a conductivity of the chemical liquid diluted with the solvent, is disposed in the supply path at a position downstream a connection points 25a, 35a, 45a, to which the chemical-liquid supply path 6 is connected.

Abstract: At a vibration applying position, ultrasonic vibration is applied upon a liquid film which is on a surface of a substrate. Concurrently with this, at a drop arrival position which is different from the vibration applying position, drops of a cleaning liquid are supplied to the liquid film, whereby wave-generating vibration which is different from the ultrasonic vibration is applied upon the liquid film. This dramatically improves removal of particles adhering to the surface of the substrate as compared with mere application of ultrasonic vibration. Hence, even when the output, the frequency and the like of the ultrasonic vibration are set to such an extent not damaging the substrate, it is possible to effectively remove particles with the wave-generating vibration and favorably clean the surface of the substrate.

Abstract: In a first aspect, an apparatus adapted to clean a semiconductor device manufacturing component is provided. The apparatus includes an ozone module adapted to (1) obtain Ozone; (2) combine the Ozone with a fluid to generate ozonated fluid; and (3) deliver the ozonated fluid to the semiconductor device manufacturing component so as to clean the semiconductor device manufacturing component. Numerous other aspects are provided.

Abstract: An apparatus for wet processing individual substrates comprising; a means for holding the substrate; a means for providing acoustic energy to a non-device side of the substrate; and a means for flowing a fluid onto a device side of the substrate.

Abstract: There is provided a method of efficiently cleaning substrates without damaging a fine pattern formed thereon. It is a method of cleaning one or more substrates in a system processing one or more substrates as one batch by dipping one or more substrates as one batch, including the steps of: immersing one or more substrates as one batch in a wet etching solution; ultrasonically cleaning one or more substrates as one batch; and drying one or more substrates as one batch. The step of ultrasonically cleaning employs a cleaning solution having a gas dissolved therein to have a degree of saturation of 60% to 100% at an atmospheric pressure, and an ultrasonic wave having a frequency of at least 500 kHz and an energy of 0.02 W/cm2 to 0.5 W/cm2.

Abstract: The present invention relates to a method for preparing a medical instrument, in particular a handpiece, with the method involving the following steps: pre-rinsing the instrument with a pre-rinsing liquid whose temperature is below the coagulation temperature of protein; rinsing the instrument with a liquid mixture that comprises water and an enzymatic cleaning agent, wherein the liquid mixture comprises a temperature of 40° C. to 70° C.; disinfecting the instrument with a liquid mixture that comprises water and an oxidant, wherein the liquid mixture has a minimum temperature of 50° C. The invention further relates to a device for implementing such a method.

Abstract: The present invention provides a method and a system for cleaning furnace, including the steps of introducing a nitrogen gas flow into a cleaning agent tank to carry the cleaning agent, introducing the nitrogen gas carrying the cleaning agent into the furnace via a pipeline to clean the furnace; and generating a steam by mixing and igniting a hydrogen gas flow and an oxygen gas flow, and then introducing the steam into the furnace to clean the furnace. The method for cleaning furnace according to the invention can effectively remove metal and non-metal impurities deposits in a furnace of semiconductor oxidation furnace equipment.

Abstract: A method for processing or treating silicon material in carrying out a cleaning or purification process comprises the following steps: wetting bulk silicon material, facing a first direction with a first liquid process medium, automatic changing of an orientation of the bulk silicon material by turning bulk silicon material with a turning device and wetting the bulk silicon material in the altered orientation with the first liquid medium. After that, the bulk silicon material is cleaned in a corresponding cleaning device.

Abstract: The flow of a processing liquid poured onto the surface of a substrate at a standstill to process the substrate from the surface to the back surface of the substrate is suppressed to achieve satisfactory cleaning. When a processing liquid is poured onto a substrate held in a horizontal position by a substrate holding unit to carryout a predetermined process, for example, a cleaning liquid is discharged through a discharge opening corresponding to the entire circumference of the back surface of the substrate before pouring the processing liquid onto the surface of the substrate, and the cleaning liquid discharged on the back surface of the substrate and a liquid flowing from the surface to the back surface of the substrate are sucked through a suction opening corresponding to the entire circumference of the back surface of the substrate and included in a first suction means. Thus an outward flow of the cleaning liquid is produced on the back surface of the substrate.

Abstract: A method and apparatus provide for automatically cleaning and decontaminating medical instruments. The method comprising the steps of: a) placing the medical instruments into a container after their use in a medical procedure; b) closing the container to seal the instruments inside whereby to prevent personnel contact with the instruments and any contaminants which might be thereon; c) inserting the sealed container into a washer/decontaminator and sealing the washer/decontaminator; d) the washer/decontaminator automatically opening the container and applying a washing fluid thereto to wash the instruments within the container; and e) the washer/decontaminator automatically applying a disinfectant to the container to disinfect the instruments whereby to allow safe handling thereof by personnel.

Abstract: A substrate processing system that enables foreign matter adhered to a rear surface or a periphery of a substrate to be completely removed. A substrate processing apparatus performs predetermined processing on the substrate. A substrate cleaning apparatus cleans the substrate at least one of before and after the predetermined processing. A jetting apparatus jets a cleaning substance in two phases of a gas phase and a liquid phase and a high-temperature gas towards the rear surface or the periphery of the substrate.

Abstract: An aqueous washing system and method of operation for washing of articles such as engineering components, including curing of resin impregnated porous metal components, comprising placing the articles into a process chamber (10) and supplying from a supply tank (11) an aqueous washing fluid at a temperature at or above 100° C. A head of pressure is established above the fluid in tank (11) whereby the fluid may be transferred by a pump (P1) to the process chamber (10). After a washing cycle the articles are rinsed by clean water and then vacuum dried before removal from the process chamber (10).

Abstract: A method of manufacturing a semiconductor device has polishing a film, and cleaning a polished surface by carrying out a first exposing the polished surface to an acidic first cleaning fluid having an effect of etching at least a partial region of the polished surface, and a second exposing the polished surface to an alkaline second cleaning fluid after the first exposing.

Abstract: A method and system for measuring contamination, such as metal contamination, on a substrate. A dry cleaning system is utilized for non-destructive, occasional removal of contamination, such as metal containing contamination, on a substrate, whereby a monitoring system coupled to the exhaust of the dry cleaning system is employed to determine the relative level of contamination on the substrate prior to dry cleaning.

Abstract: A soft spray nozzle discharging a cleaning mist is vertically directed and fixed to an arm. A rinse nozzle discharging rinsing deionized water for suppressing obstruction is vertically fixed to the arm at a prescribed distance from the soft spray nozzle. During cleaning, it follows that both nozzles discharge detergents while keeping relative layout relation. Therefore, the discharged cleaning mist and rinsing deionized water do not interfere with each other before reaching the substrate but the used detergents are entirely horizontally splashed and recovered in a cup. Thus, the cleaning mist is prevented from scattering and adhering to the periphery.

Abstract: A device for treating a surface to give a cleaning benefit comprises a container (302) containing a cleaning liquid. The liquid can be delivered to an outlet zone (306). By virtue of the outlet zone and a separate defining means (322) which may be provided the cleaning liquid is accurately discharged onto the desired area of the surface. Suitably the cleaning liquid forms a gel patch, which can be peeled away, to remove a stain.

Abstract: A substrate processing method includes a cleaning processing step, a mixed organic solvent supplying step, and a fluorine organic solvent supplying step. The cleaning processing step is a step of cleaning a main surface of a substrate by supplying deionized water to the substrate. The mixed organic solvent supplying step is a step of supplying a fluid of a mixed organic solvent to the main surface of the substrate after the cleaning processing step. The fluid of the mixed organic solvent contains a fluid of a water-soluble organic solvent and a fluid of a fluorine organic solvent having a smaller surface tension than that of the deionized water and a lower water solubility than that of the fluid of the water-soluble organic solvent. The fluorine organic solvent supplying step is a step of supplying the fluid of the fluorine organic solvent to the main surface of the substrate without supplying the fluid of the water-soluble organic solvent after the mixed organic solvent supplying step.

Abstract: Methods and apparatus are provided for using various megasonic apparatus including megasonic tanks, scanning megasonic plates, megasonic jets, and megasonic sweeping beams etc., in combination with selective chemistries to remove sub-micron particulate contaminants from the surfaces of the processing equipment used in semiconductor, medical, or any other processing environments.

Abstract: A coating film processing method is used for processing a coating film formed on a surface of a substrate to prepare for an immersion light exposure process arranged to perform light exposure through a liquid. The method includes supplying a solvent-containing liquid comprising a combination of a solvent and a solvent-ability decreasing agent for decreasing solvent ability, or a diluted solvent, onto an edge portion of the coating film, thereby performing edge portion cutting; and supplying a cleaning liquid onto the edge portion of the coating film, thereby performing edge portion cleaning, subsequently to the edge portion cutting.

Abstract: A film processing device using vaporized liquid source capable of confirming the flow control accuracy of flow control equipment such as a mass flow controller (15) controlling the flow of the liquid source without separating the flow control equipment from piping and disassembling the piping, comprising a bypass passage (41) for bypassing a part of a washing fluid feed passage (32) for feeding washing fluid to a liquid source feed passage (12) and a flowmeter such as an MFM (42), wherein the washing fluid is allowed to flow to the mass flow controller (15) through the MFM (42), and the flow of the washing fluid detected by the MFM (42) is compared with a target flow set in the mass flow controller (15) to check whether the mass flow controller (15) operates normally or not.

Abstract: In a first aspect, a method for cleaning a semiconductor fabrication chamber component having an orifice is provided. The method includes (A) placing the component into a bath having a cleaning solution; (B) flowing a fluid into the orifice thereby maintaining at least a first portion of the orifice free from cleaning solution while the cleaning solution cleans the component; and (C) withdrawing the fluid from the orifice such that cleaning solution enters into the first portion of the orifice and cleans the first portion of the orifice. Numerous other aspects are also provided.

Abstract: A rinsing liquid (DIW) is discharged from a rinsing liquid discharge port formed in a blocking member to perform rinsing processing to a substrate surface while a nitrogen gas is supplied into a clearance space, and a liquid mixture (IPA+DIW) is discharged from a liquid mixture discharge port formed in the blocking member to replace the rinsing liquid adhering to the substrate surface with the liquid mixture while the nitrogen gas is supplied into the clearance space. Thus, an increase of the dissolved oxygen concentration of the liquid mixture can be suppressed upon replacing the rinsing liquid adhering to the substrate surface with the liquid mixture, which makes it possible to securely prevent from forming an oxide film or generating watermarks on the substrate surface.

Abstract: Apparatus and method for dispensing a gas using a gas source coupled in selective flow relationship with a gas manifold. The gas manifold includes flow circuitry for discharging gas to a gas-using zone, and the gas source includes a pressure-regulated gas source vessel containing the gas at superatmospheric pressure. The pressure-regulated gas source vessel can be arranged with a pressure regulator at or within the vessel and a flow control valve coupled in flow relationship to the vessel, so that gas dispensed from the vessel flows through the regulator prior to flow through the flow control valve, and into the gas manifold. The apparatus and method permit an enhancement of the safety of storage and dispensing of toxic or otherwise hazardous gases used in semiconductor processes.

Abstract: A system and method for control of water content in a strip bath. The method to control water content in a solvent bath used for cleaning of semiconductor parts in the back end of semiconductor manufacturing requires addition of water to replace evaporated water. This is done by periodically adjusting a conductivity setpoint at least in part based on the elapsed chemical bathlife and at least in part based on the number of semiconductor parts that have been processed in the bath. The conductivity of the strip bath solution is then continuously measured (as by using an electrodeless conductivity probe). Water is added (as by a DI water injection system) into the bath solution whenever the solvent conductivity falls below the conductivity set point.

Abstract: Above a wafer which is held by a spin chuck, a blocking member whose opposed surface to the wafer is approximately horizontal is disposed at a higher position than an organic solvent component supplying outlet which is able to move from a central position of the wafer toward the periphery of the wafer. An organic solvent component nozzle scans (moves) together with the blocking member, thereby efficiently supplying a gas containing an organic solvent component discharged from the organic solvent component supplying outlet onto a surface of the wafer without getting discharged from the vicinity of the surface of the wafer owing to the blocking member. Hence, when the organic solvent component nozzle scans (moves), the concentration of the organic solvent component is always high near the organic solvent component supplying outlet.

Abstract: A soft spray nozzle discharging a cleaning mist is vertically directed and fixed to an arm. A rinse nozzle discharging rinsing deionized water for suppressing obstruction is vertically fixed to the arm at a prescribed distance from the soft spray nozzle. During cleaning, it follows that both nozzles discharge detergents while keeping relative layout relation. Therefore, the discharged cleaning mist and rinsing deionized water do not interfere with each other before reaching the substrate but the used detergents are entirely horizontally splashed and recovered in a cup. Thus, the cleaning mist is prevented from scattering and adhering to the periphery.

Abstract: The invention relates to a process including a chemical liquid treatment and a rinse liquid treatment on a substrate, more particularly to a technique for reducing consumption of a chemical liquid while achieving uniform process and preventing particle generation. In a specific embodiment, the process is performed for removing a silicon oxide film formed on a silicon wafer. The process includes three subsequently performed steps, in which (1) diluted hydrofluoric acid (DHF), (2) DHF and de-ionized water (DIW), (3) DIW are supplied, respectively, onto a rotating wafer. Transition from step (1) to step (2) is done immediately before the hydrophilic silicon oxide film is dissolved to expose the underlying hydrophobic silicon layer.

Abstract: A cleaning processing apparatus comprises a spin chuck for holding a wafer W, an under plate being positioned to face the back surface of the wafer W with a prescribed gap provided therebetween, a support member for supporting the under plate, and a nozzle hole formed to extended through the plate member and the support member. A chemical liquid, a pure water and a gas can be supplied into a nozzle hole through opening-closing valves, and the chemical liquid and the pure water remaining inside the nozzle hole can be sucked by a sucking device. A pure water remaining inside the nozzle hole is sucked and removed by using the sucking device after the processing of the wafer W with a pure water and, then, a gas is spurted onto the back surface of the wafer W.

Abstract: Embodiments of the invention provide a semiconductor wafer cleaning apparatus and a related method. In one embodiment, the invention provides a semiconductor wafer cleaning apparatus comprising a wafer stage adapted to support a wafer; a first cleaning unit adapted to spray a first cleaning solution onto the wafer to remove particles from the wafer, wherein the first cleaning solution prevents static electricity from being generated on the surface of the wafer; and a second cleaning unit adapted to provide a second cleaning solution onto the wafer and oscillate a quartz rod to remove particles from the wafer, wherein the second cleaning solution makes a surface of the wafer hydrophilic.

Abstract: The invention provides a cloth washer, a dish washer-dryer and a control system associated therewith, which facilitate establishing of a special operating program. The cloth washer comprises selector means for selecting one of a plurality of basic operating programs, which are individually preprogrammed with specifications of washing operation, rinsing operation and spin-dry operation, special operating program setting means for establishing a special operating program by correcting at least one of the specifications of the washing operation, the rinsing operation and the spin-dry operation preprogrammed for the one selected by the selector means among the plurality of basic operating programs, and control means for controlling the washing operation, the rinsing operation and the spin-dry operation according to the special operating program set by the special operating program setting means.

Abstract: A process for efficiently preparing fine zeolite particles comprising synthesizing zeolite in the presence of an alkaline earth metal-containing compound and/or with controlling the preparation process of zeolite, thereby giving fine zeolite particles being composed of crystalline aluminosilicate, the fine zeolite particles having a fine average primary particle size, being excellent in the cationic exchange properties and the oil-absorbing ability, having a fine average aggregate particle size, and being excellent in the dispersibility; fine zeolite particles obtainable by the above process; and a detergent composition comprising the fine zeolite particles, the detergent composition being excellent in the detergency.

Abstract: A chemical supply system comprises, as principal elements, a chemical storage tank in which a liquid chemical for cleaning is stored in the state of its formulated concentrate, a chemical supply apparatus connected to the chemical storage tank for positively performing chemical supply, a piping system connected to the chemical supply apparatus to form a supply flow passage that is a passage for ultrapure water which the liquid chemical is to be mixed with, a pair of discharge nozzles disposed at end portions of the piping system so as to oppose surfaces of a wafer set in a cleaning chamber to supply a cleaning liquid onto the surfaces. Thereby, remarkable miniaturization/simplification of a cleaning liquid supply system including chemical tanks is intended, it is made possible easily and rapidly to compound and supply a cleaning liquid at an accurate chemical concentration, and particles or the like being generated and mixing in a cleaning liquid, are suppressed to the extremity.

Abstract: A dish-cleaning appliance comprising a sink having a bowl defining a wash chamber with an open top for providing access to the wash chamber. A liquid recirculation system is provided for spraying liquid throughout the wash chamber. A drain conduit can be provided, alone or in combination with the recirculation system, for draining liquid from the wash chamber when the drain is closed. A fill control system is provided to ensure that the dishwashing cycle is not started with liquid in the wash chamber and that the sink drain is properly closed. One or more sensors can be provided for enabling the fill control system. The sensors can be located within the drain above the location where the drain is plugged.

Abstract: The present invention relates to a method of cleaning and drying a semiconductor structure in a modified conventional gas etch/rinse or dryer vessel. In an embodiment of the present invention, a semiconductor structure is placed into a first treatment vessel and chemically treated. Following the chemical treatment, the semiconductor structure is transferred directly to a second treatment vessel where it is rinsed with DI water and then dried. The second treatment vessel is flooded with both DI water and a gas that is inert to the ambient, such as nitrogen, to form a DI water bath upon which an inert atmosphere is maintained during rinsing. Next, an inert gas carrier laden with IPA vapor is fed into the second treatment vessel. After sufficient time, a layer of IPA has formed upon the surface of the DI water bath to form an IPA-DI water interface.

Abstract: The present invention relates to a substrate processing apparatus useful for plating a substrate or processing a substrate by dipping a substrate in a processing liquid. A substrate processing apparatus of the present invention includes: a loading/unloading area for carrying in and out a substrate; a cleaning area for cleaning the substrate; and a plating area for plating the substrate. The loading/unloading area is provided with a substrate transfer robot having a plurality of hands of dry-use design, a loading port mounted with a cassette for housing substrates, and a reversing machine of dry-use design for reversing the substrate from face up to face down.

Abstract: A method and apparatus are provided to clean a paint feed-line (1) of a painting system, line running from at least one paint tank (2, 9) to a paint deposition device (3) and feeding paint in this direction during the operational stages. During cleaning stages between operational stages, a cleaning substance is forced through the feed line (1). An inert gas, for instance nitrogen, is used as the gas for this purpose, and at the end of the cleaning stages the feed line (1) is filled with the inert gas. The gas remains in the feed line (1) until the next operational stage begins.

Abstract: A dish-cleaning appliance comprising a sink having a bowl defining a wash chamber with an open top for providing access to the wash chamber. A liquid recirculation system is provided for spraying liquid throughout the wash chamber. A drain conduit can be provided, alone or in combination with the recirculation system, for draining liquid from the wash chamber when the drain is closed. A fill control system is provided to ensure that the dishwashing cycle is not started with liquid in the wash chamber and that the sink drain is properly closed. One or more sensors can be provided for enabling the fill control system. The sensors can be located within the drain above the location where the drain is plugged.

Abstract: The invention provides a water supplying apparatus and method thereof which has a high capacity of peeling and removing a disused material such as a resist film and the like, and can efficiently use water vapor. A water supplying apparatus for executing a washing process, a cleaning process and a working process of a subject, is provided with a water vapor body supplying means for supplying a water vapor body, and a water mist body supplying means for supplying a water mist body containing liquid water fine particles, and the structure is made such that said water vapor body and said water mist body are supplied to the subject by independently controlling said two means.

Abstract: Methods and systems for preparing a substrate implementing a surface tension reducing process are provided. In one example, a substrate preparation system includes a chuck which fingers for edge gripping the substrate. The chuck is hollow to provide simultaneous access to both active and backside surfaces of the substrate, and is configured to rotate the substrate. The system includes dispense arms positioned over the substrate surfaces. The dispense arms are capable of moving between a center region and a periphery of the substrate surfaces, and each dispense arm includes a pair of supply lines for delivering fluids over the substrate surfaces. A connection couples the upper dispense arm with the lower dispense arm so that the dispense arms synchronously move between the center region and the periphery of the substrate, and remain aligned on opposite surfaces of the substrate.

Abstract: An apparatus and method for automatically collecting metallic impurities of a semiconductor wafer. In one aspect, an apparatus includes an air tight process chamber including a loading unit for loading the semiconductor wafer and unloading unit for unloading the semiconductor wafer; a vapor phase decomposition unit disposed in the process chamber for decomposing a silicon oxide layer on the semiconductor wafer; and a scanning unit disposed in the process chamber for scanning the semiconductor wafer to collect the metallic impurities. The scanning unit includes a scanning solution bottle for obtaining scanning solution that is used for absorbing metallic impurities on the semiconductor wafer; a scanning arm capable of downward, upward, and rotational movement; and a nozzle coupled to the scanning arm for drawing in scanning solution from the scanning solution bottle, and for forming a droplet of scanning solution that cohers to the nozzle when scanning a semiconductor wafer to collect metallic impurities.

Abstract: The present invention provides an apparatus for cleaning a workpiece with a cleaning medium that is maintained at a single fluid phase. The apparatus comprises means for providing the cleaning medium; a pressurizable cleaning vessel for receiving the cleaning medium and the workpiece; and means for maintaining a single fluid phase of the cleaning medium in the cleaning vessel. The present invention further provides a process for cleaning the workpiece with cleaning medium under conditions such that the workpiece is exposed to a single fluid phase of the cleaning medium. The present invention further includes a process for a storage media that includes instructions for controlling a processor for the process of the present invention. The storage media comprises means for controlling the processor to control contacting conditions of the workpiece and the cleaning medium such that the workpiece is exposed to a single fluid phase of the cleaning medium.

Abstract: An apparatus for collecting impurities on a semiconductor wafer includes an airtight process chamber, a rotary chuck disposed in the process chamber for rotating and horizontally supporting the semiconductor wafer, a first scanning unit for forming a droplet of a first scanning solution and for scanning an upper surface of the semiconductor wafer rotated by the rotary chuck with the droplet to collect first impurities, a driving unit for tilting the rotary chuck and the semiconductor wafer supported on the rotary chuck, and a second scanning unit for receiving a second scanning solution for collecting second impurities from an edge portion of the semiconductor wafer, the second scanning solution being in contact with the edge portion of the semiconductor wafer tilted by the driving unit and rotated by the rotary chuck so that the second scanning solution scans the edge portion of the semiconductor wafer.

Abstract: A system and method of selectively extending a wash cycle duration of a warewasher beyond a set minimum duration provides suitable cleaning of wares while at the same time seeking to increase the number of wash cycles per unit time. A system and method for detecting water level in a wash chamber or other tank provides the ability to identify a progressively fouling electrode. A system and method of automatically priming one or more chemical feed lines of a warewasher is also described.

Abstract: A process and apparatus to deliver both process chemical and solvent for cleaning the process chemical in a solvent purge refill system along with an integral solvent sorption module, in a single “assembly” that permits ease of shipping, minimal end-user interaction, sufficient solvent for the solvent purge operation, without residual solvent, requiring disposal. This eliminates customer handling of the solvent, and eliminates the customer's need to find a solvent waste facility, as residual solvent can be returned in the same package in one piece/one step.

Abstract: A process for dry cleaning laundry articles comprising at least one dry cleaning step followed by at least one regeneration step wherein said regeneration step comprises contacting the articles with a regeneration composition comprising 0 to 10 wt. % of a surfactant; 0.001 to 10 wt. % of water; 0 to 50 wt. % of a cosolvent and the balance being organic dry cleaning solvent, preferably a non-flammable, non-chlorine containing organic dry cleaning solvent, wherein the regeneration composition comprises an aqueous phase having a pH of at least 5.