Abstract: A system and a method for detecting abnormality of a thin-film deposition process are provided. In the method, a thin-film is deposited on a substrate in a thin-film deposition chamber by using a target, a dimension of a collimator mounted between the target and the substrate is scanned by using at least one sensor disposed in the thin-film deposition chamber to derive an erosion profile of the target, and abnormality of the thin-film deposition process is detected by analyzing the erosion profile with an analysis model trained with data of a plurality of erosion profiles derived under a plurality of deposition conditions.

Abstract: A diagnostic disc includes a disc body having a sidewall around a circumference of the disc body and at least one protrusion extending outwardly from a top of the sidewall. A non-contact sensor is attached to an underside of each of the at least one protrusion. A a printed circuit board (PCB) is positioned within an interior formed by the disc body. Circuitry is disposed on the PCB and coupled to each non-contact sensor, the circuitry including at least a wireless communication circuit, a memory, and a battery. A cover is positioned over the circuitry inside of the sidewall, wherein the cover seals the circuitry within the interior formed by the disc body from an environment outside of the disc body.

Abstract: Embodiments described herein include a method for depositing a material layer on a substrate while controlling a bow of the substrate and a surface roughness of the material layer. A bias applied to the substrate while the material layer is deposited is adjusted to control the bow of the substrate. A bombardment process is performed on the material layer to improve the surface roughness of the material layer. The bias and bombardment process improve a uniformity of the material layer and reduce an occurrence of the material layer cracking due to the bow of the substrate.

Abstract: A method for forming a film on a substrate by continuous vapor deposition includes: introducing the substrate into a film-forming apparatus; conveying the substrate into a pretreatment compartment of a pressure reduction chamber of the film-forming apparatus; performing plasma pretreatment of the substrate including supplying a plasma source gas composed of argon and at least one of oxygen, nitrogen, carbon dioxide gas and ethylene, introducing the plasma source gas that has been supplied as plasma into a gap between a magnet of the pretreatment compartment and a pretreatment roller such that the plasma is entrapped in the gap, and holding the plasma and applying a voltage between the pretreatment roller and a plasma-supply nozzle; conveying the substrate into a vapor deposition compartment of the pressure reduction chamber; and forming the film by vapor deposition on a surface of the substrate which has been pretreated.

Abstract: According to one aspect of the present disclosure, a method of coating a substrate (100) with at least one cathode assembly (10) having a sputter target (20) and a magnet assembly (25) that is rotatable around a rotation axis (A) is provided. The method comprises: Coating of the substrate (100) while moving the magnet assembly in a reciprocating manner in a first angular sector (12); and subsequent coating of the substrate (100) while moving the magnet assembly (25) in a reciprocating manner in a second angular sector (14) different from the first angular sector (12). According to a second aspect, a coating apparatus for performing said method is provided.

Abstract: A sputtering target assembly, sputtering apparatus, and method, the target assembly including a backing plate having an aperture formed therein; and a target bonded to a front surface of the backing plate. The aperture is disposed on the backing plate such that a first end of the aperture is sealed by a portion of the target that is predicted by a sputtering target erosion profile to have the highest etching rate during a corresponding sputtering process.

Abstract: A system for use in processing a substrate is provided. One system includes a chamber having an interior region that is exposed to plasma when processing a substrate. The internal region includes surfaces of parts of the chamber. A controller is interfaced with the chamber and includes a detector to enable control of a scope. The scope is configured for insertion into the chamber to inspect the interior region of the chamber without breaking a vacuum of the chamber. The detector includes an optical processor for identifying a characteristic of material present on a surface being inspected via the scope. A tool model processor is configured to receive information regarding the identified characteristic of the material present on the surface and interface with a tool model for the chamber to identify an adjustment to a parameter of a process to be performed using the chamber.

Abstract: Provided is a sputtering target with which it is possible to form a magnetic thin film having a high coercive force Hc. The sputtering target is a sputtering target that contains metallic Co, metallic Pt, and an oxide, wherein the sputtering target contains no metallic Cr except inevitable impurities, the oxide has B2O3, and the sputtering target comprises 10 to 50 vol % of the oxide.

Abstract: An inflator of a vacuum atmosphere conversion chamber is provided. The inflator comprises a first charging pipe including a first valve body, a second charging pipe including a second valve body, a pressure monitoring and judging module, an oxygen concentration monitoring and judging module and a control module. The pressure monitoring and judging module is connected separately to the vacuum atmosphere conversion chamber and the control module, the oxygen concentration monitoring and judging module is connected separately to the vacuum atmosphere conversion chamber and the control module, and the control module is connected separately to the first valve body and the second valve body. An inflation method of vacuum atmosphere conversion chamber and a vacuum sputtering equipment are also provided. The inflator, the inflation method and the vacuum sputtering equipment can switch the charging gases, for eliminating the safety hazard on the basis of solving the oxidation issue effectively.

Abstract: Disclosed is an apparatus for film formation by physical sputtering, which includes a vacuum chamber; a substrate platform arranged inside of the chamber, and provided thereon with a substrate to be formed with a film; a target material arranged inside of the chamber, and arranged opposite to the substrate; at least one square resistance meter, which is connected to the target material to real-timely measure an actual resistance value of the target material; an excitation source, which is used to bombard the target material for sputtering atoms of the target material; and a control system, which is connected to the square resistance meter. The apparatus for film formation by physical sputtering has a simple structure, can monitor the consumption of the target material in real time, effectively avoid damage of a backboard and abnormality of a product resulting from breakdown of the target material, and improve the quality of the product.

Abstract: Provided is a material diagnostic method capable measuring and diagnosing in a nondestructive manner the type, quantity of occurrence, depth distribution, and the like of even very small microstructures of about several tens of ?m or less with sufficiently good precision. A material diagnostic method for using ultrasonic waves in a nondestructive manner to diagnose microstructures generated in a material, wherein changes in the scattering of ultrasonic waves by crystal grains are captured from bottom face waves and backscattered waves to thereby quantify the amount of change in microstructures, using the fact that changes in the properties of crystal grains produced by microstructures affect the scattering of ultrasonic waves.

Abstract: A film thickness monitoring system is provided. The film thickness monitoring system includes a source, a valve, and a chamber. The source is configured to provide a deposition material. The valve is connected to the source. The chamber includes a manifold, a quartz crystal microbalance, and a pressure sensor. The manifold is connected to the valve and has at least one first nozzle and at least one second nozzle. The quartz crystal microbalance is disposed opposite to the at least one second nozzle. The deposition material is adapted to be deposited on the quartz crystal microbalance through the at least one second nozzle, and the quartz crystal microbalance includes a shutter facing the at least one second nozzle. The pressure sensor is disposed in the manifold. A method for monitoring a film thickness deposition process is also provided.

Abstract: An electronic device (such as a laptop) may selectively latch a base to a lid using a switchable magnet array. In particular, a drive circuit in the electronic device may apply at least a current pulse to a conductor that generates a magnetic field to reverse a direction of a remnant magnetization in the switchable magnet array. By reversing the direction of the remnant magnetization, the electronic device may selectively increase or decrease a magnetic field generated by the switchable magnet array at an attraction plate in the electronic device. This magnetic field may, in turn, result in an attractive force between the switchable magnet array and the attraction plate, thereby selectively latching the base and the lid when the base and the lid are proximate to each other.

Abstract: Disclosed are an apparatus and a method for saving energy while increasing the conveying speed in vacuum coating plants consisting of a series of sputtering segments (3) and gas separation segments (2) along with a continuous substrate plane (1).

Abstract: A sputtering system and method are disclosed. The system has at least one dual magnetron pair having a first magnetron and a second magnetron, each magnetron configured to support target material. The system also has a DMS component having a DC power source in connection with switching components and voltage sensors. The DMS component is configured to independently control an application of power to each of the magnetrons, and to provide measurements of voltages at each of the magnetrons. The system also has one or more actuators configured to control the voltages at each of the magnetrons using the measurements provided by the DMS component. The DMS component and the one or more actuators are configured to balance the consumption of the target material by controlling the power and the voltage applied to each of the magnetrons, in response to the measurements of voltages at each of the magnetrons.

Abstract: A thin film deposition source, a deposition apparatus and a deposition method using the same are disclosed. The deposition apparatus includes a deposition source including a plurality of jet nozzles that spray a deposition substance on a surface of a substrate and are arranged in a first direction, and at least one shutter controlling a jet region of the deposition substance by opening or shielding at least a portion of a jetting passageway of the deposition substance.

Abstract: Provision of fabrication, construction, and/or assembly of a two-terminal memory device is described herein. The two-terminal memory device can include an active region with a silicon bearing layer, an interface layer, and an active metal layer. The interface layer can be grown on the silicon bearing layer, and the growth of the interface layer can be regulated with N2O plasma.

Abstract: A method of sputtering a component includes positioning a conductive substrate into a vacuum chamber, wherein the conductive substrate is tubular and has a surface. A source electrode including a source material may be inserted into the conductive substrate. A first bias voltage ?Vac1 may be applied between the conductive substrate and the vacuum chamber and a second bias voltage ?Vas1 may be applied between the source electrode and the vacuum chamber, sputtering the source material onto the conductive substrate.

Abstract: An apparatus and methods for plasma-based sputtering deposition using a direct current power supply is disclosed. In one embodiment, a plasma is generated by connecting a plurality of electrodes to a supply of current, and a polarity of voltage applied to each of a plurality of electrodes in the processing chamber is periodically reversed so that at least one of the electrodes sputters material on to the substrate. And an amount of power that is applied to at least one of the plurality of electrodes is modulated so as to deposit the material on the stationary substrate with a desired characteristic. In some embodiments, the substrate is statically disposed in the chamber during processing. And many embodiments utilize feedback indicative of the state of the deposition to modulate the amount of power applied to one or more electrodes.

Abstract: The system and method of the instant invention utilizes a color sensor in order to monitor and control the application of a coating to a substrate when such coating is transferred onto a substrate from a deposition source. Application of the coating to the substrate is terminated when the color sensor detects a pre-programmed end point evidencing the application of an appropriate coating determined by its color.

Abstract: The antenna has a structure that the high frequency electrode is received in a dielectric case. The high frequency electrode has a go-and-return conductor structure that two electrode conductors are disposed close to and in parallel to each other with a gap therebetween to form a rectangular plate shape as a whole, and the two electrode conductors are connected by a conductor at an end in the longitudinal direction. A high frequency current flows in the two electrode conductors in opposite directions. A plurality of openings are formed on edges of the two electrode conductors on the side of the gap, and the openings are dispersed and arranged in the longitudinal direction of the high frequency electrode. The antenna is disposed in a vacuum container in a direction that a main surface of the high frequency electrode and a surface of the substrate are substantially perpendicular to each other.

Abstract: A plasma processing apparatus (11) is provided with: a processing container (12), in which processing is performed using plasma; a plasma generating mechanism (19), which has a high frequency oscillator that oscillates high frequency, includes a high frequency generator that generates high frequency by being disposed outside of the processing container (12), and which generates plasma in the processing container (12) using the high frequency generated by means of the high frequency generator; a determining mechanism, which determines the state of the high frequency oscillator; and a notifying mechanism, which performs notification of determination results obtained from the determining mechanism.

Abstract: Provided is a sputtering apparatus which can form a multilayer film giving high productivity and with less spiral pattern by effective use of targets, and a method of forming multilayer film using the apparatus. An embodiment is a multilayer-film sputtering apparatus comprising: a rotatable cathode unit (30) having cathodes (7a and 7b) arranged on the same circumference with respect to the rotational center, and having a power-supply mechanism for supplying power to each cathode; a sensor (14) for detecting the position of cathode; and a rotation mechanism for rotating the cathode unit (30).

Abstract: A thin film forming apparatus includes: a gas supply device for supplying a gas for film deposition configured to include a plurality of gas supply sections arranged side by side in a width direction of a film substrate in a vacuum chamber, and a supply amount adjustment section for adjusting the supply amount of the gas for each of the gas supply sections; and a gas partial pressure measurement device for measuring partial pressure of each kind of gas in the vacuum chamber configured to include measurement sections disposed so as to correspond to a position where each of the gas supply sections is disposed in the width direction of the film substrate, and measure the partial pressure of the gas at a position where each of the measurement sections is disposed.

Abstract: An inline deposition control apparatus for a vacuum deposition apparatus having one or more deposition sources for depositing one or more deposition layers on a substrate, includes one or more light sources adapted to illuminate the substrate having the one or more deposition layers; a detection arrangement adapted for spectrally resolved detection of a measurement signal, wherein the measurement signal is selected from at least one of: light reflected at the substrate having the one or more deposition layers, and light transmitted through the substrate having the one or more deposition layers; an evaluation unit to determine the respective thicknesses of the one or more layers based on the measurement signal; and a controller connected to the evaluation unit and connectable to the deposition apparatus for feed-back control of the deposition of the one or more deposition layers based on the determined thicknesses. Furthermore, a method of inline deposition control is provided.

Abstract: To uniformly perform processing such as deposition on a processing object such as a large, heavy substrate for optics, the large, heavy substrate for optics is accurately, reliably attached to a holder.

Abstract: A sputtering apparatus includes a substrate holder which holds a substrate to be rotatable in the plane direction of the processing surface of the substrate, a substrate-side magnet which is arranged around the substrate and forms a magnetic field on the processing surface of the substrate, a cathode which is arranged diagonally above the substrate and receives discharge power, a position detection unit which detects the rotational position of the substrate, and a controller which controls the discharge power in accordance with the rotational position detected by the position detection unit.

Abstract: A processing data managing system includes: a processing device 11 (such as a sputtering device for manufacturing a magnetic disc) for repeating the same process for each cycle; a sampling unit 30 for collecting raw data on a processing condition in the processing device (such as a discharge condition); a calculation unit 100 for receiving the raw data, calculating the raw data according to a predetermined rule, and processing it as summary data expressing a characteristic point for each cycle (characteristic value: for example, average value, maximum value, minimum value, standard deviation, discharge time, and the like); a data storage unit 40 for storing the processed summary data in storage means; and a display/output unit 50 for chart-displaying the summary data stored in the storage means.

Abstract: A gas manifold for delivery gas to a sputtering chamber is provided with ports to accommodate plasma emission monitors to monitor plasma information in the sputtering chamber to provide feedback control. The collimators of the plasma emission monitors is exposed to gas flow and thus coating of the monitor is greatly reduced.

Abstract: A magnetron assembly for a rotary target cathode comprises a rigid support structure, a magnet bar structure movably attached to the rigid support structure, and at least one actuation mechanism coupled to the rigid support structure and configured to change a distance of the magnet bar structure from a surface of a rotatable target cylinder. The magnetron assembly also includes a position indicating mechanism operative to measure a position of the magnet bar structure relative to the surface of the rotatable target cylinder. A communications device is configured to receive command signals from outside of the magnetron assembly and transmit information signals to outside of the magnetron assembly.

Abstract: An apparatus and method for controlling an application of power to power a plasma chamber. A detector detects actual power out from the power stage to the plasma chamber during a sampling interval. A compare module compares the actual power out during the sampling interval to a present power setting during the sampling interval and generates a compensation value. An adjust module updates the present power setting for the power stage with the compensation value to provide a new power setting for the power stage to control the power out from power stage to the plasma chamber during the deposition process whereby power losses occurring during the deposition process are compensated during the deposition process. If there is a fixed time period for the deposition process, the compensation method and apparatus may be used to compensate the deposition process for energy losses without extending the duration of the deposition process.

Abstract: An apparatus for treating a surface of an object comprises a vacuum chamber in which the object is intended to be placed, and means, in communication with the vacuum chamber, for treating the surface of the object, comprising at least two plasma generator. The apparatus also comprises means for controlling each generator independently of any other generator. These controlling means comprise means for activating/deactivating the generator. The invention also relates to a process for treating a surface of an object.

Abstract: A plasma processing apparatus includes a plasma generating device configured to generate a plasma within a processing vessel by using a high frequency wave generated by a microwave generator 41 including a magnetron 42 configured to generate the high frequency wave; detectors 54a and 54b configured to measure a power of a traveling wave that propagates to a load side and a power of a reflected wave reflected from the load side, respectively; and a voltage control circuit 53a configured to control a voltage supplied to the magnetron 42 by a power supply 43. Further, the voltage control circuit 53a includes a load control device configured to supply, to the magnetron 42, a voltage corresponding to a power calculated by adding a power calculated based on the power of the reflected wave measured by the detector 54b to the power of the traveling wave measured by the detector 54a.

Abstract: A process for manufacturing a transparent body for use in a touch panel is provided. The process includes: The process includes depositing a first transparent layer stack over a substrate with a first silicon-containing dielectric film, a second silicon-containing dielectric film, and a third silicon-containing dielectric film. The first and the third silicon-containing dielectric films have a low refractive index and the second silicon-containing dielectric film has a high refractive index. The process further includes depositing a transparent conductive film in a manner such that the first transparent layer stack and the transparent conductive film are disposed over the substrate in this order. At least one of the first silicon-containing dielectric film, the second silicon-containing dielectric film, the silicon-containing third dielectric film, or the transparent conductive film is deposited by sputtering from a target.

Abstract: A PVD target structure for use in physical vapor deposition. The PVD target structure includes a consumable slab of source material and one or more detectors for indicating when the slab of source material is approaching or has been reduced to a given quantity representing a service lifetime endpoint of the target structure.

Abstract: When a film is formed by using a sputter method, distribution variation due to a progress of target erosion generated during the film formation is suppressed, and film thickness distribution and resistance value distribution are corrected to an optimal state. In order to maintain the magnetic flux density formed on the target surface at a constant level, the distance between the target surface and the magnet surface (MT distance) is corrected in accordance with the progress of the target erosion. Further, two or more MT distances are set by a process recipe or the like while forming a thin film, and different distribution shapes are combined to form a near flat distribution shape.

Abstract: Methods and systems for in situ measuring sputtering target erosion are disclosed. The emission of material from the sputtering target is stopped, a distance sensor is scanned across a radial line on the sputtering target. The sputtering chamber contains a controlled environment separate and distinct from the environment outside the chamber, and the controlled environment is maintained during the scanning The resulting distance data is converted into a surface profile of the sputtering target. The accuracy of the surface profile can be less than about ±1 ?m. The distance sensor is protected from deposition of the material from the sputtering target. End-of-life for a sputtering target can be determined by obtaining a surface profile of the sputtering target at regular intervals and replacing the sputtering target when the thinnest location on the target as measured by the surface profile is below a predetermined threshold.

Abstract: The invention relates to a method and to a device for reversing the feeding of a sputter coating system, particularly when coating a photovoltaic module, in clean rooms, having the following characteristics: a) a transport frame (11) for receiving a substrate wafer (19) of a photovoltaic module, b) a rotary device having means for mounting the transport frame (11), having means for rotating the transport frame (11), and having means for transporting the transport frame (11), c) means for precisely aligning the rotary device relative to the sputter coating system, d) a detection device (18) for checking a sputter process, and computer program having a program code for performing the process steps.

Abstract: Apparatus for forming a solar cell comprises a housing defining a chamber including a substrate support. A sputtering source is configured to deposit particles of a first type over at least a portion of a surface of a substrate on the substrate support. An evaporation source is configured to deposit a plurality of particles of a second type over the portion of the surface of the substrate. A cooling unit is provided between the sputtering source and the evaporation source. A control system is provided for controlling the evaporation source based on a rate of mass flux emitted by the evaporation source.

Abstract: A control system and method for controlling two motors determining the azimuthal and circumferential position of a magnetron rotating about the central axis of the sputter chamber in back of its target sputtering and capable of a nearly arbitrary scan path, e.g., with a planetary gear mechanism. A system controller periodically sends commands to the motion controller which closely controls the motors. Each command includes a command ticket, which may be one of several values. The motion controller accepts only commands having a command ticket of a different value from the immediately preceding command. One command selects a scan profile stored in the motion controller, which calculates motor signals from the selected profile. Another command instructs a dynamic homing command which interrogates sensors of the position of two rotating arms to determine if the arms in the expected positions. If not, the arms are rehomed.

Abstract: Provided is a supersonic beam apparatus including a nozzle for injecting a gas at a supersonic velocity into a vacuum; a skimmer arranged at a downstream of the nozzle; and an ionization part for ionizing a particle in a supersonic beam formed by the skimmer from the gas injected from the nozzle to form a cluster ion beam, wherein a set position of the skimmer is one of a maximum position where an amount of cluster generation in a relationship of the amount of cluster generation with respect to a distance between the nozzle and the skimmer is maximized and a position closer to the nozzle than the maximum position.

Abstract: A deposition system is provided, where conductive targets of similar composition are situated opposing each other. The system is aligned parallel with a substrate, which is located outside the resulting plasma that is largely confined between the two cathodes. A “plasma cage” is formed wherein the carbon atoms collide with accelerating electrons and get highly ionized. The electrons are trapped inside the plasma cage, while the ionized carbon atoms are deposited on the surface of the substrate. Since the electrons are confined to the plasma cage, no substrate damage or heating occurs. Additionally, argon atoms, which are used to ignite and sustain the plasma and to sputter carbon atoms from the target, do not reach the substrate, so as to avoid damaging the substrate.

Abstract: A magnetron sputter reactor (410) and its method of use, in which SIP sputtering and ICP sputtering are promoted is disclosed. In another chamber (412) an array of auxiliary magnets positioned along sidewalls (414) of a magnetron sputter reactor on a side towards the wafer from the target is disclosed. The magnetron (436) preferably is a small one having a stronger outer pole (442) of a first polarity surrounding a weaker inner pole (440) of a second polarity all on a yoke (444) and rotates about the axis (438) of the chamber using rotation means (446, 448, 450). The auxiliary magnets (462) preferably have the first polarity to draw the unbalanced magnetic field (460) towards the wafer (424), which is on a pedestal (422) supplied with power (454). Argon (426) is supplied through a valve (428). The target (416) is supplied with power (434).

Abstract: A sputtering magnetron for coating a substrate includes a target and a magnet system that can be displaced relative to one another. The magnet system forms a magnetic field that penetrates the target, and has a support apparatus, a support plate with magnets arranged thereon, and actuators. The support apparatus is connectable to the support plate by the actuators such that distance between the magnet system and the target can be set, at least in sections. A cooling circuit cools the magnet arrangement and the target by a coolant. A layer measuring device obtains data of layer properties of at least one layer deposited on the substrate. Magnet system controls evaluate the data obtained and generate manipulated variables employed as the input variables of the actuators. A method for dynamically influencing the magnetic field is also provided.

Abstract: In a simple method and device for producing plasma flows of a metal and/or a gas electric discharges are periodically produced between the anode and a metal magnetron sputtering cathode in crossed electric and magnetic fields in a chamber having a low pressure of a gas. The discharges are produced so that each discharge comprises a first period with a low electrical current passing between the anode and cathode for producing a metal vapor by magnetron sputtering, and a second period with a high electrical current passing between the anode and cathode for producing an ionization of gas and the produced metal vapor. Instead of the first period a constant current discharge can be used. Intensive gas or metal plasma flows can be produced without forming contracted arc discharges. The selfsputtering phenomenon can be used.

Abstract: An apparatus for preparing specimens for microscopy including equipment for providing two or more of each of the following specimen processing activities under continuous vacuum conditions: plasma cleaning the specimen, ion beam or reactive ion beam etching the specimen, plasma etching the specimen and coating the specimen with a conductive material. Also, an apparatus and method for detecting a position of a surface of the specimen in a processing chamber, wherein the detected position is used to automatically move the specimen to appropriate locations for subsequent processing.

Abstract: A sputtering device includes: a sputtering target; a substrate supporter facing the sputtering target and upon which a substrate is disposed; an anode mask between the sputtering target and the substrate which is on the substrate supporter; and a gas distribution member between the anode mask and the sputtering target, and including a plurality of gas distribution tubes separated from each other. Each gas distribution tube includes a plurality of discharge holes defined therein and through which gas is discharged to a vacuum chamber configured to receive the sputtering device.

Abstract: A magnetron sputtering apparatus of the invention includes: a sputtering chamber in which a target can be opposed to an object to be subjected to film formation; a gas introduction port facing the sputtering chamber; a magnet provided outside the sputtering chamber and opposite to the target and being rotatable about a rotation center which is eccentric with respect to center of the magnet; a sensor configured to detect a circumferential position of the magnet in a plane of rotation of the magnet; and a controller configured to start voltage application to the target to cause electrical discharge in the sputtering chamber on the basis of the circumferential position of the rotating magnet and gas pressure distribution in the sputtering chamber.

Abstract: A sputtering method includes receiving etch time information for a first substrate detected in a dry etching process, calculating a deposition time for a second substrate from the etch time information for the first substrate, and executing sputtering for the second substrate based the calculated deposition time. The thickness of the thin film deposited on the substrate in the sputter device may be uniformly maintained by using etch end point information detected in an end point detection (EPD) device. A sputtering system comprises a sputter device for executing a sputtering process for depositing a thin film on a substrate by a sputtering method, an EPD device for generating EPD information including etch time information for the substrate for a calculation of a deposition time during which the thin film is deposited, and a controller for calculating a deposition time by using the EPD information, and for controlling the sputter device based on the calculated deposition time.

Abstract: The nanoparticle production device includes a target provided with a nanoparticle source surface, and a magnetron generating a first magnetic field, the target being mounted on the magnetron and the first magnetic field forming field lines at the level of the nanoparticle source surface. The device further includes balancing means of the first magnetic field at the level of the target, arranged to close fleeing field lines of the first magnetic field and to keep said lines closed at the level of said nanoparticle source surface, said balancing means being distinct from the magnetron.