Abstract: An iPVD apparatus (20) is programmed to deposit material (10) onto semiconductor substrates (21) by cycling between deposition and etch modes within a vacuum chamber (30). Static magnetic fields are kept to a minimum during at least the etch modes, at least less than 150 Gauss, typically less than 50 Gauss, and preferably in the range of 0-10 Gauss. Static magnetic fields during deposition modes may be more than 150 Gauss, in the range of 0-50 Gauss, or preferably 20-30 Gauss, and may be the same as during etch modes or switched between a higher level during deposition modes and a lower level, including zero, during etch modes. Such switching may be by switching electromagnet current or by moving permanent magnets, by translation or rotation. Static magnetic fields are kept to a minimum during at least the etch modes, at least less than 150 Gauss, typically less than 50 Gauss, and preferably in the range of 1-10 Gauss. The modes may operate at different power and pressure parameters.

Abstract: A magnetron sputtering apparatus is provided whereby film formation speed can be improved by increasing instantaneous erosion density on a target, and the target life can be prolonged by moving an erosion region over time to prevent local wear of the target, and realize uniform wear. Multiple plate-like magnets are installed around a columnar rotating shaft, and the columnar rotating shaft is rotated, thereby forming a high-density erosion region on a target to increase film formation speed, and the erosion region is moved along with rotation of the columnar rotating shaft, thereby wearing the target uniformly.

Abstract: A system for depositing material on a substrate using plasma and a target. The target may include the material and/or a second material. The system may include a plasma source for providing the plasma. The system may also include a chamber for containing the substrate, the plasma, and the target during deposition of the material on the substrate. The system may also include a first magnet disposed above the chamber or disposed below the chamber for influencing distribution of the plasma inside the chamber. At least one of a bottom surface of the magnet and a top surface of the magnet is at an angle with respect to an imaginary axis of the plasma source. A circular cross section of the plasma source is symmetrical with respect to the imaginary axis of the plasma source. The angle is greater than 0 degree and less than 90 degrees.

Abstract: A plasma processing system and method provide an internal coil in a vacuum chamber for maintaining a high density plasma therein in a manner that may have a less restrictive requirement on metal flux shielding than when the shield protects a dielectric window. The shield also shields the coil from plasma heat load. The coil need not be actively cooled. Some metal is allowed to pass through the shield and deposit on the coil. This leads to a thinner shield with less complicated slots than for shields in external coil configurations. Good RF transparency of the shield is a result of the much simpler shield shape. The coil is not sputtered and is thus not consumable. The coil is enclosed in a small conductive space, reducing its inductance, resulting in reduced coil current and voltage, in turn simplifying the design and construction of the tuning network and RF connectors. Stiffeners support the coil and are profiled to avoid formation of conductive paths forming from metal deposits.

Abstract: A dual magnetron for plasma sputtering in which two distinctly different magnetrons are mounted on a common plate rotating about a central axis in back of a target. At least one of the magnetrons is switched on and off by changes in chamber pressure or target power while the other magnetron, if it does switch, switches in complementary fashion. When the two magnetrons are mounted at different radii, the switching effects a effective movement of the magnetron such that different areas of the target are exposed to a sputtering plasma. In particular, a small unbalanced magnetron may scan the target edge to produce a highly ionized sputter flux and a larger magnetron positioned near the center can be switched on to clean sputter material redeposited on the target center.

Abstract: A lift mechanism for and a corresponding use of a magnetron in a plasma sputter reactor. A magnetron rotating about the target axis is controllably lifted away from the back of the target to compensate for sputter erosion, thereby maintaining a constant magnetic field and resultant plasma density at the sputtered surface, which is particularly important for stable operation with a small magnetron, for example, one executing circular or planetary motion about the target axis. The lift mechanism can include a lead screw axially fixed to the magnetron support shaft and a lead nut engaged therewith to raise the magnetron as the lead nut is turned. Alternatively, the support shaft is axially fixed to a vertically moving slider. The amount of lift may be controlled according a recipe based on accumulated power applied to the target or by monitoring electrical characteristics of the target.

Abstract: A sputtering apparatus includes a substrate holding section that holds a substrate on which surface a film is formed; a plate-shaped target made of a material of the film and disposed in a position facing the surface of the substrate in an atmosphere of a predetermined gas; a magnetic field generator that is disposed on a side, opposed to the substrate side, of the target, that generates a magnetic field having an arc shape with a vertex reaching the substrate side, and that rotates the magnetic field along the target; a power source that applies, to the target, voltage of a polarity causing ions of the predetermined gas to head for the target; and a magnetic plate that is inserted between the target and the magnetic field generator and that limits the magnetic field reaching the target at a part of a rotation path of the magnetic field.

Abstract: The invention refers to a method for the fabrication of a thin film acoustic reflector stack with alternating layers of a first and a second material having different acoustic characteristic impedances, wherein the layers are deposited alternately by a reactive pulsed dc magnetron sputtering process. The invention further comprises an acoustic reflector stack fabricated thereby and an arrangement for performing the method.

Abstract: A sputtering system includes a disk-shaped target concentric with an annular anode in a reaction chamber. A thermally-sensitive sample is arranged in the reaction chamber so as to receive material sputtered from the target. The thermally-sensitive sample can be a soft tissue biological specimen. A magnet is arranged proximal to the sample within the reaction chamber. The magnet can be a U-shaped magnet or one or more bar magnets. During sputtering from the target, the magnetic field of the magnet deflects the trajectory of secondary electrons generated by the sputtering process, thereby protecting the sample from heating and damage.

Abstract: A magnet assembly for a magnetron sputtering device having circular, linear or other types of planar targets including two permanent magnets and an electromagnet, e.g., electromagnetic coil between the permanent magnets associated with a sputtering target of a target assembly. An electrical control circuit is arranged to selectively adjust at least the current level and the direction of current to the electromagnet to alter the magnetic fields of the magnet assembly thereby encompassing the entire portions of the sputtering target, including the extreme inner and outer portions of the sputtering target to optimize the target uniformity and the sputtered film uniformity on a substrate. Methods for operating the magnet assembly of the magnetron sputtering devices, for optimizing the target utilization and sputtered film uniformity on a substrate, and for operating the magnetron sputtering process in a reactive gas environment to form an insulating or dielectric thin film are also provided.

Abstract: The present invention generally provides an apparatus and method for processing a surface of a substrate in a PVD chamber that has a magnetron assembly whose shape can be distorted to adjust the magnetic field strength in the processing region of the deposition chamber to improve the deposition uniformity. In general, aspects of the present invention can be used for flat panel display processing, semiconductor processing, solar cell processing, or any other substrate processing. In one aspect, the processing chamber contains one or more magnetron regions and magnetron actuators that are used to increase and more evenly distribute the magnetic field strength throughout the processing region of the processing chamber during processing.

Abstract: A split magnet ring, particularly useful in a magnetron plasma reactor sputter depositing tantalum or tungsten or other barrier metal into a via and also resputter etching the deposited material from the bottom of the via onto the via sidewalls. The magnet ring includes two annular magnet rings composed of the same axial polarity separated by a non-magnetic spacing of at least the axial length of one magnet and associated poles. A small unbalanced magnetrons rotates about the back of the target having an outer pole of the same polarity as the ring magnets surrounding a weaker inner pole of the opposite pole.

Abstract: A quadruple electromagnetic coil array coaxially arranged in a rectangular array about a chamber axis outside the sidewalls of a plasma sputter reactor, preferably in back of an RF coil within the chamber. The coil currents can be separately controlled to produce different magnetic field distributions, for example, between a sputter deposition mode in which the sputter target is powered to sputter target material onto a wafer and a sputter etch mode in which the RF coil supports the gas sputtering the wafer. The coil array may include a tubular magnetic core, particularly useful for suppressing stray fields. A water cooling coil may be wrapped around the coil array to cool all the coils. The electromagnets can be powered in different relative polarities in a multi-step process.

Abstract: Disclosed are apparatus and method embodiments for achieving etch and/or deposition selectivity in vias and trenches of a semiconductor wafer. That is, deposition coverage in the bottom of each via of a semiconductor wafer differs from the coverage in the bottom of each trench of such wafer. The selectivity may be configured so as to result in punch through in each via without damaging the dielectric material at the bottom of each trench or the like. In this configuration, the coverage amount deposited in each trench is greater than the coverage amount deposited in each via.

Abstract: An apparatus for generating plasma includes a cathode having an evaporable surface configured to emit a material comprising plasma and macroparticles; oppositely directed output apertures configured to direct the plasma; a filter configured to transmit at least some of the plasma to the output apertures while preventing transmission of at least some of the macroparticles, the filter comprising at least one deflection electrode disposed generally parallel to and facing at least a portion of the evaporable surface; a first element for generating a first magnetic field component having a first polarity between the cathode and the at least one deflection electrode; and a second element for generating a second magnetic field component having a second polarity at the evaporable surface of the cathode that is opposite that of the first polarity such that a low-field region is created between the evaporable surface and the at least one deflection electrode.

Abstract: A new and useful plasma source is provided, comprising at least one electrode connected to an alternating current power supply and disposed adjacent to a portion of a grounded substrate. The electrode has a center magnet that produces a magnetron plasma at the electrode when the electrode is biased negative by the alternating power supply, and a mirror plasma on the substrate when the electrode is biased positive by the alternating power supply.

Abstract: Magnetron source has a target configuration with a sputter surface, a magnet configuration generating above the sputter surface a magnetic field which forms, in top view onto the sputter surface, at least one magnet field loop. Viewed in a cross-sectional direction upon the target configuration, a tunnel-shaped arc magnet field is formed and further an electrode configuration is provided which generates, when supplied by a positive electric potential with respect to an electric potential applied to the target configuration, an electric field which crosses at an angle the magnetic field and wherein the electrode configuration comprises a distinct electrode arrangement in a limited segment area of the electrode configuration, which is substantially shorter than the overall length of the magnet field loop.

Abstract: A sputtering source has a magnetron and a target. Control magnets are provided about the target to modify the magnetic lines of the magnetron. A sputtering source has several magnetrons, each having a respective target. A plasma/sputtering shield is provided in front of the targets. The shield has several windows, each aligned with one of the targets. Magnets are provided on the shield to control the magnetic lines of the magnetrons.

Abstract: Disclosed is a box-shaped facing-targets sputtering apparatus capable of forming, at low temperature, a compound thin film of high quality while causing minimal damage to an underlying layer.

Abstract: Disclosed is a facing-targets-type sputtering apparatus and method capable of forming a metal film under the conditions of low gas pressure and low discharge voltage. An opening is formed in each of two facing side faces of a vacuum chamber vessel or in each of two facing side faces of a box-type discharge unit attached to an opening portion of a vacuum chamber vessel. The two openings are covered by a pair of cooling blocks. Each cooling block holds a target facing a discharge space. Magnetic field generation means is disposed so as to surround each target and operative to generate a magnetic field that surrounds a discharge space provided between the paired targets. Electron reflection means is disposed above the exposed surface of each target along the periphery of the target. A DC power and a high-frequency power are applied between the vacuum chamber vessel and the targets.

Abstract: An array of auxiliary magnets is disclosed that is positioned along sidewalls of a magnetron sputter reactor on a side towards the wafer from the target. The magnetron preferably is a small, strong one having a stronger outer pole of a first magnetic polarity surrounding a weaker outer pole of a second magnetic polarity and rotates about the central axis of the chamber. The auxiliary magnets preferably have the first magnetic polarity to draw the unbalanced magnetic field component toward the wafer. The auxiliary magnets may be either permanent magnets or electromagnets.

Abstract: The invention relates to an arc source or a source for vaporizing or sputtering of materials and a method for operating a source. The source comprises an insulated counter-electrode and/or an AC magnet system. Thereby, dependent on the requirement, any desired potential can be applied to the counter-electrode and/or the source can be operated with different magnet systems, in particular as arc or sputter source.

Abstract: A sputtering apparatus and a sputter film deposition method, which includes a conventional magnetron and an AC magnetron for deposition of a low refractive index film, and a conventional magnetron and an AC magnetron for deposition of a high refractive index film, performs film deposition by each of the AC magnetrons until having achieved 90% of a designed film thickness, and then performs the film deposition only by each of the conventional magnetrons, and which can control the film thickness with high precision and have excellent productivity.

Abstract: A cathode for a cluster tool in accordance with the present invention includes a base, a disc-shaped target mounted to the base and a magnetic source for establishing magnetic flux lines through the target. The target further comprises a top plate with a plurality of through holes; and a bottom plate with a plurality of bottom plate openings which interconnect distribution grooves formed in one surface with base face channels formed in the other surface. When the top plate is mated to the bottom plate, a path of fluid communication is established from the base face channels to the through holes to allow for inert gas to pass through the target. During operation, the through holes act as micro-cathodes to more efficiently cause material to be sputtered from the target. Each through hole defines a through hole axis, and the magnetic flux lines are parallel with the through holes axes.

Abstract: A magnetron with mechanisms for smoothly and continuously adjusting a DC power applied to its targets to compensate for the changes in the sputtering characteristics of the targets that occur with target aging. A magnetron according to the present teachings includes a set of concentric targets for sputtering a film onto a wafer in response to an AC power and a DC power applied to the targets and a power controller that adjusts the DC power. The adjustments to the DC power enable the magnetron to maintain uniformity in the thicknesses of films formed with the magnetron throughout the life of its targets.

Abstract: A sputtering target assembly includes a backing plate of which both surfaces are evenly formed and a target having one surface that is evenly formed and attached to one surface of the backing plate and the other surface that is formed with different thicknesses according to a location thereof.

Abstract: An asymmetric alternating voltage (preferably 40 KHz) is provided between a pair of targets having a coaxial (preferably frusto-conical) relationship to (1) deposit the material in a uniform thickness on the substrate surface (2) eliminate dielectric material from the surfaces of the targets and other components (3) provide a single ignition of the targets and eliminate target ignitions thereafter and (4) reduce the substrate temperature by using low energy (“cold”) electrons from a plasma discharge to produce a low energy current. The asymmetry may result from amplitude differences between the voltage in alternate half cycles and the voltage in the other half cycles. A second alternating voltage (preferably radio frequency) modulates the asymmetric alternating voltage to provide the smooth plasma ignition.

Abstract: The invention includes an apparatus and method for determining the pass through flux of magnetic materials. The apparatus comprises one or more magnetic field sensors arranged in such a way as to collect field strength data in any or all the x, y, z directions. The apparatus also comprises a magnet field source or arrangement of magnet field sources which are placed beneath the material being characterized and includes a mechanism whereby the magnetic material can be mapped by the movement of any one or combination of: magnetic field source or sources, sensors and magnetic material. The invented method comprises the use of various configurations of magnetic sources in order to generate a magnetic field that emulates the open-loop condition found in magnetron sputtering.

Abstract: A method for controlling plasma density distribution over a target of a magnetron sputter source has at least one electron trap generated with a magnetic field over the target. The field forms a closed circulating loop and, viewed in cross section, has a tunnel shape. Due to the loop of the tunnel-shaped magnetic field as well as of an electric field that is at an angle to it and which is generated between an anode and the target acting as the cathode, an electron current is formed, which forms along and in the loop current loop. In a region along the loop of the magnetic field, the field conditions are locally varied under control. With changes of field conditions, the component of the loop electron current is varied which is anodically coupled out of the loop.

Abstract: A sputtering target having an annular vault with a throat between two sidewalls and facing a substrate to be sputter coated. The vault is partially closed by a plate placed in the annular throat between the sidewalls. Thereby, the plasma density is increased within the vault. Furthermore, the position of the annular gap in the plate between the two sidewalls may be chosen to increase uniformity of sputtering deposition arising from the two sidewalls. The plate may be formed of one or more annular rings attached to the walls or a single plate having apertures formed therein may bridge the throat. Alternatively, the target may be formed as a cylindrical hollow cathode with the plate partially closing the circular throat. A rotating asymmetric roof magnetron may be combined with a hollow cathode without the restricting plate.

Abstract: An electric field is provided in a first direction between an anode and a target having a flat disposition. A magnetic field is provided such that the magnetic flux lines are in a second direction substantially perpendicular to the first direction. The magnet structure may be formed from permanent magnets extending radially in a horizontal direction, like the spokes of a wheel, and from magnetizable pole pieces extending vertically from the opposite ends of the spokes. The permanent magnets and the pole pieces define a well. The target is disposed in the well so that its flat disposition is in the same direction as the magnetic flux lines. Molecules of an inert gas flow through the well. Electrons in the well move in a third direction substantially perpendicular to the first and second directions. The electrons ionize molecules of the inert gas. The ions are attracted to the target and sputter atoms from the surface of the target. The sputtered atoms become deposited on a substrate.

Abstract: A magnetron with mechanisms for controlling the magnetic field that acts on its targets in such a manner as to provide control over erosion patterns and independent control of stress, uniformity, deposition rate, and coupling coefficient of a deposited film. A magnetron according to the present teachings includes a set of targets each for eroding a material for deposition onto a wafer contained in the magnetron and a mechanism for adjusting a racetrack position on each target. The racetrack position defines the areas of the targets from which a predominant amount of the material is eroded. The control of racetrack position enables precise control of erosion characteristics and control over stress, uniformity, deposition rate, and coupling coefficient.

Abstract: A source of sputtered deposition material has, in one embodiment, a torus-shaped plasma generation area in which a plasma operates to sputter the interior surface of a toroidal cathode. In one embodiment, the sputtered deposition material passes to the exterior of the source through apertures provided in the cathode itself. A torus-shaped magnetic field generated in the torus-shaped plasma facilitates plasma generation, sputtering of the cathode and ionization of the sputtered material by the plasma.

Abstract: A sputtering chamber includes a sputtering target with a front target surface, and a magnetron behind the sputtering target. The magnetron provides a magnetic field at the front target surface along a generally round path that includes a path indentation. A shutter is spaced apart from the front target surface by a shutter spacing. A substrate is aligned with a central region in front of the front target surface and spaced apart from the front target surface by a selected spacing that is greater than the shutter spacing. The central region has a diameter defined by a uniformly sputtered thickness of deposited layers on the substrate. The path indentation is set to a path indentation depth that adjusts the selected spacing to maximize the diameter.

Abstract: A metal vapor deposition reactor includes a primary reactor chamber having a primary chamber enclosure comprising a ceiling and side wall. The reactor further includes a secondary reactor chamber having a secondary chamber enclosure and a metal source target within the secondary chamber formed of a metal species to be deposited on said semiconductor wafer. Process gas inlets furnish process gases into a region of the secondary chamber near a working surface of said metal source target. A D.C. power source connected across said metal source target and a conductive portion of said secondary chamber enclosure has sufficient power to support ionization of the process gas near the working surface of the metal source target whereby to form a plasma that sputters metal ions and neutrals from the working surface of the metal source target.

Abstract: The present invention discloses a novel rectangular sputtering magnetron cathode that significantly improves target utilization and sputtering efficiency. Different from conventional magnatron design that considers only magnetic field distribution and is, therefore, qualitive or empirical, the present magnetron cathode is developed through computer-aided simulation of plasma discharge. The magnetic and electric fields are optimized in a combined manner by quantitatively simulating electron trajectories, electron/Ar collisions, space charge distribution, and target erosion profile. Sputtering tests with Cu target show a target utilization of 55%˜65%, much higher than conventional target utilization which is about 40%. Meanwhile, high sputtering efficiency is achieved by maintaining a relatively strong magnetic field over the surface of the target, which can be thicker than 12 mm, as a result of effective confinement of high-energy electrons.

Abstract: A magnetron sputter reactor having a complexly shaped target with a vault arranged about a central axis facing the wafer. The vault may be right cylindrical with axially magnetized magnets disposed in back of its sidewall or be annular with preferably opposed magnets disposed in back of its two sidewalls. One or two electromagnetic coils are disposed about the processing space between the target and the wafer to either promote extraction of metal ions from the vault, to defocus the ion beam extracted from the vault and focused towards the central axis, or to compensate for a magnetic shield surrounding the reactor.

Abstract: To optimize the yield of sputtered-off material as well as the service life of the target on a magnetron source, in which simultaneously good attainable distribution values of the layer on the substrate, stable over the entire target service life, a concave sputter face 20 in a configuration with small target-substrate distance d is combined with a magnet system to form the magnetron electron trap in which the outer pole 3 of the magnetron electron trap is disposed stationarily and an eccentrically disposed inner pole 4 with a second outer pole part 11 is developed rotatable about the central source axis 6.

Abstract: A mirrortron sputtering apparatus for sputtering on a substrate includes a vacuum chamber for placing therein a pair of targets spaced apart from each other with inner surfaces thereof facing each other and outer surfaces thereof positioned opposite to the inner surfaces, and magnets respectively disposed closer to the outer surfaces of the targets for forming a magnetic field between said pair of targets. The magnetic field has a magnetic field distribution with a peripheral region having a high magnetic flux density and a center region having a low magnetic flux density. In this arrangement, the substrate is set alongside a space between the pair of targets as facing said magnetic field.

Abstract: A method of forming a tantalum-containing layer on a substrate is described. The tantalum-containing layer is formed using a physical vapor deposition technique wherein a magnetic field in conjunction with an electric field function to confine material sputtered from a tantalum-containing target within a reaction zone of a deposition chamber. The electric field is generated by applying a power of at least 8 kilowatts to the tantalum-containing target. The magnetic field is generated from a magnetron including a first magnetic pole of a first magnetic polarity surrounded by a second magnetic pole of a second magnetic polarity opposite the first magnetic polarity. The first magnetic pole preferably has a magnetic flux at least about 30% greater than a magnetic flux of the second magnetic pole. The tantalum-containing layer deposition method is compatible with integrated circuit fabrication processes. In one integrated circuit fabrication process, an interconnect structure is formed.

Abstract: A first target is arranged opposite a substrate while a second target is arranged not opposite the substrate within a vacuum chamber. Pressure within the vacuum chamber is adjusted to a first pressure, and during a period wherein the pressure is changed from the first pressure to a second pressure which is lower than the first pressure, plasma density above the second target is made greater than plasma density above the first target. At a time point when the second pressure is reached, the plasma density above the first target is made greater than the plasma density above the second target.

Abstract: An array of auxiliary magnets is disclosed that is positioned along sidewalls of a magnetron sputter reactor on a side towards the wafer from the target. The magnetron preferably is a small, strong one having a stronger outer pole of a first magnetic polarity surrounding a weaker outer pole of a second magnetic polarity and rotates about the central axis of the chamber. The auxiliary magnets preferably have the first magnetic polarity to draw the unbalanced magnetic field component toward the wafer. The auxiliary magnets may be either permanent magnets or electromagnets.

Abstract: A magnetron sputtering source and a method of use thereof on which the sputtering source has at least two toroidal magnetron electron taps each defining a maximum of a magnetic field strength component in a radial direction along a surface of the sputtering source. Thereby, from each one of a ring zone on a first smaller radius R1F and a second larger radius R2F, a plane of the workpiece in a holder facing the sputtering source has a corresponding distance d1 and d2. A value d assumes all possible values of d1 and d2. In particular, 0.8≦(R2F−R1F)/d≦3.0 and preferably 1.0≦(R2F−R1F)/d≦2.2 The arrangement defines a sputtering geometry with the process space with a defined dual concentric narrow plasma discharge with correspondingly defined concentrated plasma inclusion.

Abstract: A magnetron source comprises a hollow cathode with a non-planar target. By using a magnet between the cathode and a substrate, plasma can be controlled to achieve high ionization levels, good step coverage, and good process uniformity. Step coverage uniformity is also improved by controlling the magnetic fields, and thus the flow of ions and electrons, near the plane of the substrate.

Abstract: A magnetron sputtering device and method for applying an interference layer to a substrate includes a magnetron sputtering chamber (A) which houses a substrate carrying assembly (B). The substrate carrying assembly comprises a primary rotation table (10), rotating about its central vertical axis (12) and at least one secondary table (36) mounted to an upper surface (14) of the primary rotation table. Substrates (42) are either horizontally or vertically loaded on to the secondary table. The substrates rotate about their symmetrical axis. First and second targets (50a, 50b) are housed by the chamber and are disposed on opposite sides of the chamber. The primary rotation table rotates the substrates between a position adjacent a first target where a layer having a low refractive index is applied to the substrates and a position adjacent a second target where a layer having a high refractive index is applied to the substrates.

Abstract: A sputtering apparatus includes a sputtering process chamber, a sputtering target assembly, and an adjustable magnetron assembly. The sputtering target assembly includes heating/cooling passages within the sputtering target assembly. A first side of a heat exchanger/pressure relieving plate is attached to a target backing. A second or opposing side of the heat exchanger/pressure relieving plate is attached to an insulation cover to form, within the sputtering target assembly, pressure relieving vacuum passages. The target assembly completely covers and seals against a high-vacuum-compatible insulator resting over and sealed to a top flange of the process chamber. A magnetron assembly resting over the target assembly, is independent from vacuum, or vacuum components, and provides means to move or scan a magnetron or magnet array over the target assembly. The distance between the magnetron and target assembly is adjustable throughout the useful life of the target independent from vacuum, or vacuum components.

Abstract: A target and magnetron for a plasma sputter reactor and the associated sputtering method provided by the extended magnetic fields and plasma regions. The target has an annular vault facing the wafer to be sputter coated. Various types of magnetic means positioned around the vault, some of which may rotate along the vault, create a magnetic field in the vault to support a plasma extending over a large volume of the vault from its top to its bottom. The large plasma volume increases the probability that the sputtered metal atoms will become ionized and be accelerated towards an electrically biased wafer support electrode.

Abstract: A PVD system comprises a hollow cathode magnetron with a downstream plasma control mechanism. The magnetron has a hollow cathode with a non-planar target and at least one electromagnetic coil to generate and maintain a plasma within the cathode. The magnetron also has an anode located between the cathode and a downstream plasma control mechanism. The control mechanism comprises a first, second and third electromagnetic coil beneath a mouth of the target, vertically spaced so as to form a tapered magnetic convergent lens between the target mouth and a pedestal of the magnetron.

Abstract: A focused magnetron sputter system includes a processing chamber, a plurality of sputter sources arranged within the processing chamber, a substrate holder disposed above the plurality of sputter sources, a rotational shutter arranged between a substrate and the plurality of sputter sources for selectively forming a coating on the substrate, and a power supply connected to the substrate holder for supplying a substrate bias.

Abstract: A magnetron sputter coating vacuum processing system has a magnetron cathode that includes a frusto-conical target having a cone-shaped magnet assembly that causes the erosion rate to be highest under a main magnetic tunnel at an intermediate radius or the centerline of the target when the target is uneroded, with the location of the highest erosion rate gradually shifting to two areas as the target erodes, one being an inner at radii less than that of the target centerline and one being an outer area at radii greater than the target centerline. As a result, the target erosion tends to be equalized over the target area during the life of the target, improving target utilization. The magnet assembly includes three magnet rings, including an inner ring and an outer ring having poles magnetically connected by a yoke, which rings form a main magnetic tunnel. The polar axis of the inner ring is parallel to the target surface, and the polar axis of the outer ring is perpendicular of the target surface.