Abstract: In order to simplify the sequence of creating a mask, in particular for producing a printing plate, and at the same time to improve the quality of the printing plate produced by means of a mask, the use of laser-induced thermal transfer is provided. The structure information is applied directly to the surface of a printing plate carrier during the creation of a mask, by means of a thermal transfer film and a laser image-setting unit, so that by means of the structure information applied, differentiation with regard to image points and non-image points can be carried out directly in order to produce a printing plate.

Abstract: There is provided a method for producing a metal/ceramic bonding article, the method including the steps of: bonding a metal plate 12 of an alloy containing copper and nickel directly to at least one side of a ceramic substrate 10; applying a resist 14 on a predetermined portion of the metal plate 12 to remove an undesired portion of the metal plate 12 by etching; and removing the resist 14 to form a pattern having a predetermined shape of the alloy on the ceramic substrate 10. According to this method, it is possible to reduce the displacement failure of parts to improve productivity and to prevent bonding failure during the mounting of a semiconductor device or the like thereon.

Abstract: The present invention provides an edge cleaning system and method in which a directed stream of a mild etching solution is supplied to an edge area of a rotating workpiece, including the front surface edge and bevel, while a potential difference between the workpiece and the directed stream is maintained. In one aspect, the present invention provides an edge cleaning system that is disposed in the same processing chamber that is used for deposition or removal processing of the workpiece. In another aspect, the mild etching solution used for edge removal is also used to clean the front surface of the wafer, either simultaneously with or sequentially with the edge removal process.

Abstract: A solution comprising potassium hydrogen peroxymonosulfate containing an elevated level of KHSO5 and having a weight ratio of SO5 to SO4 of greater than 1.0:1, and its use in microetching metal substrates is disclosed.

Abstract: The present invention relates to a chemical milling solution and a chemical milling process for removing a desired depth of material from metal parts. The milling solution contains nitric acid, hydrofluoric acid, a wetting agent, such as a surfactant, dissolved titanium, and the balance water. The solution is maintained at a temperature in the range of from about 110° F. to about 130° F. The metal part to be milled is immersed in the milling solution for a time sufficient to remove a desired depth of material from at least one surface of the part.

Abstract: An extrusion-free wet cleaning process for post-etch Cu-dual damascene structures is developed. The process includes the following steps: (1). providing a wafer having a silicon substrate and at least one post-etch Cu-dual damascene structure, the post-etch Cu-dual damascene structure having a via structure exposing a portion of a Cu wiring line electrically connected with an N+ diffusion region of the silicon substrate, and a trench structure formed on the via structure; (2). applying a diluted H2O2 solution on the wafer to slightly oxidize the surface of the exposed Cu wiring line; (3). washing away cupric oxide generated in the oxidation step by means of an acidic cupric oxide cleaning solution containing diluted HF, NH4F or NH2OH; and (4). providing means for preventing Cu reduction reactions on the Cu wiring line.

Abstract: The invention provides a chemical-mechanical polishing systems, and methods of polishing a substrate using the polishing systems, comprising (a) an abrasive, (b) a liquid carrier, and (c) a positively charged polyelectrolyte with a molecular weight of about 15,000 or more, wherein the abrasive comprises particles that are electrostatically associated with the positively charged electrolyte.

Abstract: Described is a polishing technique adapted for multilevel metallization of an electronic circuit device, which comprises polishing a metal film with a polishing liquid containing an oxidizing substance, a phosphoric acid and a protection-layer forming agent. The present invention makes it possible to polishing a metal film at a high removal rate while suppressing occurrence of scratches, delamination, dishing or erosion.

Abstract: A polishing composition comprising: (a) at least one abrasive selected from the group consisting of silicon dioxide and aluminum oxide, (b) at least one organic compound selected from the group consisting of a polyethylene oxide, a polypropylene oxide, a polyoxyethylene alkyl ether, a polyoxypropylene alkyl ether, a polyoxyethylenepolyoxypropylene alkyl ether and a polyoxyalkylene addition polymer having a C≡C triple bond, represented by the formula (1): wherein each of R1 to R6 is H or a C1-10 alkyl group, each of X and Y is an ethyleneoxy group or a propyleneoxy group, and each of m and n is a positive number of from 1 to 20, (c) at least one polishing accelerating compound selected from the group consisting of citric acid, oxalic acid, tartaric acid, glycine, &agr;-alanine and histidine, (d) at least one anticorrosive selected from the group consisting of benzotriazole, benzimidazole, triazole, imidazole and tolyltriazole, (e) hydrogen peroxide, and (f) water.

Abstract: Lead brass components for potable water distribution circuits (e.g., plumbing components made of CuZn39Pb3, containing 3% Pb), also chronium plated ones, are subjected to a lead-selective surface etching to reduce, in operation, the release of Pb caused by Pb surface “smearing”, resulting either from machining or molding; said elements are firstly contacted by an aqueous solution of an acid capable of forming soluble Pb salts, preferably a non-oxidizing solution, by simply dipping the components in the solution, e.g., a solution of 0.1 M sulfamic acid, at 20°-50° C. for 10 to 50 minutes, and, subsequently, the elements are passivated by immersion into a strong base aqueous solution, e.g., a solution of 0.1 M NaOH at 20°-25° C., for approximately 10 minutes; in this manner, plumbing components made of a copper based alloy containing Pb are obtained, which components, after 15 days of test according to US NSF STD61 procedure, release Pb in an amount less than 0.

Abstract: Write head coils for magnetic disk systems are commonly formed through electroplating onto a seed layer in the presence of a photoresist mask. It is then necessary to remove the seed layer everywhere except under the coil itself. The present invention achieves this through etching in a solution of ammonium persulfate to which has been added the complexing agent 1,4,8,11 tetraazundecane. This suppresses the reduction of Cu++ to Cu, thereby increasing the dissolution rate of copper while decreasing that of nickel-iron. Two ways of implementing this are described—adding the complexing agent directly to the ammonium persulfate and introducing the 1,4,8,11 tetraazundecane through a dipping process that precedes conventional etching in the ammonium persulfate.

Abstract: A method of deprocessing damascene type integrated circuits which include copper (Cu) and tantalum nitride (TaN) layers is provided. An etch is used which includes an acetic salt in a solution with an hydroxide. The acetic salt etches the copper layer.

Abstract: A tantalum-based liner for copper metallurgy is selectively removed by chemical-mechanical planarization (CMP) in an acidic slurry of an oxidizer such as hydrogen peroxide, deionized water, a corrosion inhibitor such as BTA, and a surfactant such as Duponol SP, resulting in a high removal rate of the liner without appreciable removal of the exposed copper and with minimal dishing.

Abstract: A method to redistribute solid copper deposited by PVD on a wafer topography. The deposited copper is solubilized in a fluid for redistribution. The copper redistribution prevents inherent nonuniformity of the deposited copper film thickness by improving the uniformity of thickness of the copper film on the covered surfaces, such as vertical and bottom surfaces. The method provides the advantages of good adhesion and good grain growth and orientation that are achieved with copper deposited by PVD, and also provides the good step coverage as achieved with copper deposited by CVD.

Abstract: Non-chromate solutions for treating and/or etching metals, particularly, aluminum, aluminum alloys, steel and titanium, and method of applying same wherein the solutions include either a titanate or titanium dioxide as a “drop-in replacement” for a chromium-containing compound in a metal surface etching solution that otherwise would contain chromium.

Abstract: A method of forming a conductive device includes forming a conductive layer on a substrate; etching the conductive layer to form a plurality of conductive traces; etching the conductive layer to form at least one mask feature; and removing substrate material that is not covered by the at least one mask feature so as to form at least one mechanical alignment feature.

Abstract: A method of cleaning a dual damascene structure. A first metal layer, a cap layer, and a dielectric layer are formed on a substrate in sequence. Then a dual damascene opening is formed in the dielectric layer and the cap layer, exposing the first metal layer. Then, a post-etching cleaning step is carried out to clean the dual damascene opening, and there are two types of cleaning methods. The first method uses a fluorine-based solvent to clean the dual damascene opening. An alternative cleaning method uses a hydrogen peroxide based solvent at a high temperature, followed by a hydrofluoric acid solvent cleaning step. Then, an argon gas plasma is sputtered to clean the dual damascene opening before a second metal layer fills in the dual damascene opening.

Abstract: The present invention provides a composition for chemical-mechanical polishing which comprises at least one abrasive particle having a surface at least partially coated by a activator. The activator comprises a metal other than a metal of Group 4(b), Group 5(b) or Group 6(b). The composition further comprises at least one oxidizing agent. The composition is believed to be effective by virtue of the interaction between the activator coated on the surface of the abrasive particles and the oxidizing agent, at the activator surface, to form free radicals. The invention further provides a method that employs the composition in the polishing of a feature or layer, such as a metal film, on a substrate surface. The invention additionally provides a substrate produced this method.

Abstract: The present invention is directed to an article with a patterned appearance provided by a visually observable contrast between one or more genereally transparent thin film coatings deposited over a substrate. At least one of the deposited coatings exhibits a reflected color and/or contrast and visible differing transmitted color and/or contrast or a plurality of coatings together exhibit different reflected colors and/or contrasts. The coatings are selected from the group of: metals depositable by magnetron sputtering vacuum deposition, chemical vapor deposition, pyrolytic coating, or sol-gel techniques, metal oxide coatings, metal nitride coatings, semi-conductor containing coatings, metal oxynitrides and mixtures thereof. The present invention is also directed to a method of making the articles having a visually observable patterned appearance involving masking and applying the coating or applying the coating and removing a portion of the coating to form the pattern.

Abstract: A liquid etchant and a method for roughening a copper surface each capable of providing copper with a roughened surface increased in acid resistance regardless of a chlorine ion in a short period of time, to thereby ensure firm adhesion between a copper conductive pattern and an outer layer material during manufacturing of a printed circuit board, resulting in the manufacturing being highly simplified. The liquid etchant includes a main component containing an oxo acid such as sulfuric acid and a peroxide such as hydrogen peroxide. Also, the liquid etchant includes an auxiliary component containing a tetrazole such as 5-aminotetrazole or the like, or a 1,2,3-azole. The liquid etchant permits a copper surface to be roughened in an acicular manner.

Abstract: A process for the manufacture of printed circuit boards is disclosed wherein a plated silver deposit is used both as an etch resist and as a final finish for enhancing the solderability of the copper circuits. An aqueous alkaline etchant which is free of halide ions is proposed as being particularly compatible with the silver etch resist/final finish.

Abstract: This invention relates to a slurry composition and a method of its preparation. In particular, the slurry composition of the present invention includes a silica wherein the silica comprises a surface modification. The silica-based slurry of the present invention is suitable for polishing articles and especially useful for chemical-mechanical planarization (“CMP”) of semiconductor and other microelectronic substrates.

Abstract: It is an object of the present invention to provide a processing method for preventing elution of lead in a lead-containing copper alloy to prevent lead from eluting from a faucet metal, etc. made of a lead-containing copper alloy, and a drinking water service fitting made of a lead-containing copper alloy in which elution of lead has been prevented. By forming a chromate film on the surface of a lead-containing copper alloy material, it is possible to reduce elution of the lead left in a limited amount on the surface. A drinking water service fitting made of a lead-containing copper alloy is immersed in an alkaline etching solution in a pre-processing step for a nickel chromium plating step to selectively remove lead on the surface of the lead-containing copper alloy material and is then activated in a solution such as sulfuric acid and hydrochloric acid.

Abstract: The object of the present invention is to provide a copper clad laminate with a copper-plated circuit layer, and a method for manufacturing a printed wiring board that excels the conventional ones in the aspect ratio of a circuit pattern when processed to a printed wiring board comprising a fine-pitch circuit. The object of the present invention is achieved by manufacturing a printed wiring board with the use of a copper clad laminate with a copper-plated circuit layer characterized by a copper-plated circuit layer and an outer-layer copper foil layer that satisfied the relationship in a case where a specific etchant is used, the R v value (Vsc/Vsp), which is the ratio of the dissolution rate (Vsp) of deposited copper that constitutes said copper-plated circuit layer to the dissolution rate (Vsc) of copper that constitutes said outer-layer copper foil layer, is 1.0 or more.

Abstract: An integrated semiconductor substrate bevel cleaning system that enables transfer of substrates through the bevel cleaner either with or without substrate processing within the bevel cleaner. The invention provides an integrated bevel cleaning apparatus comprising a transfer position, a rinsing position and an etching position.

Abstract: A method and an apparatus for removing coating layers from the top of alignment marks on a wafer situated in a spin processor are described. The method may be carried out by first providing a spin process equipped with a rotatable wafer pedestal, then providing a wafer that has at least one alignment mark covered by a coating layer, mounting an edge ring on an outer periphery of the wafer pedestal, the edge ring has at least one tab section extending outwardly from an inner periphery of the edge ring, then positioning the wafer faced down and supported by an inert gas flow on the edge ring such that a narrow gap is formed between the tab section on the edge ring and the alignment marks and dispensing an etchant onto a backside of the wafer while rotating.

Abstract: A scrubber device is provided. The scrubber device may etch a backside of a wafer and may clean a frontside of the wafer simultaneously. The scrubber device may comprise a programmed controller adapted to supply a non-etching fluid to a frontside of the wafer whenever an etching fluid is supplied to the backside of the wafer.

Abstract: The invention provides a chemical-mechanical polishing system, and a method of polishing using the system, comprising (a) an abrasive, a polishing pad, or both an abrasive and a polishing pad, (b) iodine, (c) an iodine vapor-trapping agent, and (d) a liquid carrier.

Abstract: This invention provides a process for treating a workpiece having a front side, a back side, and an outer perimeter. In accordance with the process, a processing fluid is selectively applied or excluded from an outer peripheral margin of at least one of the front or back sides or the workpiece. Exclusion and/or application of the processing fluid occurs by applying one or more processing fluids to the workpiece as the workpiece and corresponding reactor are spinning about an axis of rotation that is generally orthogonal to the center of the face of the workpiece being processed. The flow rate of the one or more processing fluids, fluid pressure, and/or spin rate are used to control the extent to which the processing fluid is selectively applied or excluded from the outer peripheral margin.

Abstract: A composition for removing side wall which includes an aqueous solution containing both nitric acid and at least one of carboxylic acids selected from the group consisting of polycarboxylic acid, aminocarboxylic acid, and salts thereof; a method of removing side wall; and a process for producing a semiconductor device. Use of the composition is effective in removing side wall at a low temperature in a short time in semiconductor device production without corroding the wiring material, e.g., an aluminium alloy. Thus, a semiconductor device having an aluminium alloy wiring which has undergone substantially no corrosion can be efficiently produced.

Abstract: Compositions for micro-etching metal surfaces are disclosed. Also disclosed are methods for micro-etching metal surfaces. The compositions and methods disclosed are particularly useful in the manufacture of printed circuit boards.

Abstract: A resistive etching solution containing thiourea, which is particularly suitable for etching an electrically resistive material comprised of a nickel-chromium alloy. The resistive etching solution allows for fast and effective etching of a nickel-chromium alloy in cases where the ratio of (a) copper surface area to (b) nickel/chromium surface area, is relatively large, and where fine feature etching is desired.

Abstract: A processing solution preparation and supply apparatus includes a dissolving preparation bath to which a material powder and ultrapure water are supplied. This dissolving preparation bath is connected to a substrate processing apparatus via a pipe, and a processing solution prepared from the material powder on-site is supplied to the processing apparatus. To reduce an increase in the microorganism concentration in the ultrapure water, this ultrapure water is circulated substantially constantly. This suppresses deterioration and concentration fluctuations of a processing solution for use in processing of a semiconductor substrate, when this processing solution is supplied to the use side. This also reduces particles and improves the economical efficiency.

Abstract: A lead-containing copper-based alloy is immersed into a weak acidic or neutral etching solution having a buffer effect which is formed by adding an organic acid into a complexing agent having a high ability to form a complexing ion with lead, and lead particles present on the surface of the lead-containing copper-based alloy are then removed. The complexing agent is one of an organic ammonium salt such as ammonium acetate, or ammonium citrate, or may be an organic sodium salt such as sodium acetate, sodium tartrate, and sodium citrate. Preferably, an immersion temperature of the alloy to the etching solution falls within a range of from 10 to 50° C. The etching solution is agitated with oxygen or a gas containing oxygen blown thereinto during the immersion of the alloy into the etching solution. An extremely low voltage of −0.3 to +0.2 V vs. NHE is applied from outside to the lead-containing copper-based alloy as an anode.

Abstract: An integrated lead suspension is formed from a laminate of three materials in a variety of configurations having from three to five layers. The materials are stainless steel, polyimide and copper. Each layer is essentially homogeneous, but may be formed with one or more holes or voids prior to the formation of the laminate. The voids can be used to eliminate the need for double-sided etching or to make small features which would otherwise be unavailable with conventional manufacturing processes.

Abstract: The invention includes a method of cleaning a surface of a copper-containing material by exposing the surface to an acidic mixture comprising NO3−, F− and one or more organic acid anions having carboxylate groups. The invention also includes a semiconductor processing method of forming an opening to a copper-containing material. A mass is formed over a copper-containing material within an opening in a substrate. The mass contains at least one of an oxide barrier material and a dielectric material. A second opening is etched through the mass into the copper-containing material to form a base surface of the copper-containing material that is at least partially covered by particles comprising at least one of a copper oxide, a silicon oxide or a copper fluoride. The base surface is cleaned with a solution comprising nitric acid, hydrofluoric acid and one or more organic acids to remove at least some of the particles.

Abstract: An integrated lead suspension is formed from a five layer laminate of stainless steel, polyimide and copper. Prior to lamination, the steel layer has preformed voids which may have various configurations. The voids are provided for intentionally weakening high strain flexure areas in the suspension so that strain energy can be dissipated more effectively.

Abstract: This invention relates to a relatively thin cladded graphic arts impression graphic arts impression die plate (20) having a steel layer (22) which is integral throughout the extent thereof with a layer of copper (24) or bronze. A relieved design-defining surface may be formed in the copper or bronze layer by a chemical etching process or by chemical milling. The graphic arts impression die plate may be mounted on a magnetic support member (28) to present an assembly which increases the thickness of the die assembly sufficiently to permit use thereof on standard stamping and embossing equipment without modification of the die-supporting chase. The magnetic support member (28) has a plurality of pairs of permanent magnets (33, 35) each pair of which is embedded within a respective cavity (32) and that are magnetically bridged by a steel plate 36.

Abstract: This invention relates to a relatively thin cladded graphic arts impression graphic arts impression die plate (20) having a steel layer (22) which is integral throughout the extent thereof with a layer of copper (24) or bronze. A relieved design-defining surface may be formed in the copper or bronze layer by a chemical etching process or by chemical milling. In the case of chemical etching of the graphic arts impression die plate (20), a design-defining layer of photo-resist is applied to the outer surface of the copper layer (24) or the bronze layer and the relieved design is formed in the copper or bronze layer using a conventional ferric chloride etching solution. The etched graphic arts impression die plate may be mounted on an etchant-resistant backing or magnetic support member (28) to present an assembly which increases the thickness of the die assembly sufficiently to permit use thereof on standard stamping and embossing equipment without modification of the die-supporting chase.

Abstract: A multilayered circuit board is produced by: a. laminating a copper foil conductor layer and a nickel foil or nickel plating etch-stopping layer by simultaneously press-bonding the nickel and copper layer to form a multilayered clad sheet; b. selectively etching the multilayered clad sheet; c. forming an insulating layer and an outer conductor layer on the surface of the clad sheet; d. patterning the outer conductor layer; and e. electrically connecting the internal conductor layer and the outer conductor layer by interposing a columnar conductor formed in the base by etching.

Abstract: An integrated lead suspension is formed from a laminate of three materials in a variety of configurations having from three to five layers. The materials are stainless steel, polyimide and copper. Each layer is essentially homogeneous, but may be formed with one or more holes or voids prior to the formation of the laminate. The voids allow dielectric material to be removed from the area beneath the conductors to simplify processing and reduce the cost of the suspensions. The voids can also form a window through which conductors can be shorted to other conductive layers to form an electrostatic discharge shunt. Alternatively, the shorting of conductors can be used as a cross-over for various conductors.

Abstract: A polishing slurry for CMP of Cu, which comprises a first complexing agent containing a heterocyclic compound which is capable of forming a water-insoluble complex with Cu, and a second complexing agent containing a heterocyclic compound which is capable of forming a slightly water-soluble or water-soluble complex with Cu to thereby provide at least one extra ligand subsequent to formation of the complex.

Abstract: A method and apparatus are provided for reworking of finishing metallurgy on pads of electronic components. The pads are copper or copper/nickel and have a layer of nickel thereon and an overlying layer of gold. The gold layer is removed first followed by the nickel layer and then the component is treated to remove etch and corrosion products. Media blasting is then used to restore the pads to their original condition as on prime parts. The pads are then replated using conventional nickel and gold plating solutions to form the reworked component.

Abstract: A printed circuit board is produced by patterning a resist layer according to a circuit mask that defines desired circuit paths. The resist pattern layer is formed by removing the resist from the board in the desired circuit paths and a conductive material is plated onto the board in the resist voids defined by the circuit mask so that the height of the conductive material relative to the substrate equals or exceeds the height of the resist layer relative to the substrate. A low-reactive solution is applied over the conductive material and removes a surface portion of the conductive material. As the solution removes the conductive layer, it forms a film barrier and the solution composition changes, both of which substantially inhibits any further removal of the conductive material. Next, the film barrier is removed from the board allowing another film barrier to form stimulating the removal of further conductive material.

Abstract: The present invention provides a chemical mechanical polishing composition for planarizing copper and a method for planarizing, or initiating the planarization of, copper using the composition. The chemical mechanical polishing composition includes an oxidizing agent and a copper (II) compound. The composition optionally includes one or more of the following compound types: a complexing agent; a corrosion inhibitor; an acid; and, an abrasive. In one embodiment, the oxidizing agent is hydrogen peroxide, ferric nitrate or an iodate. In another embodiment, the copper (II) compound is CuSO4. The chemical mechanical polishing method involves the step of polishing a copper layer using a composition that includes an oxidizing agent and a copper (II) compound. The composition is formed in a variety of ways. In one embodiment, it is formed by adding the copper (II) compound to a solution containing the oxidizing agent, and any included optional compound types, in deionized water.

Abstract: The invention includes a semiconductor processing method of cleaning a surface of a copper-containing material by exposing the surface to a mixture having a basic pH and comprising Cl−, NO3− and F−. The invention also includes a semiconductor processing method of forming an opening to a copper-containing substrate. Initially, a mass is formed over the copper-containing substrate. The mass comprises at least one of a silicon nitride and a silicon oxide. An opening is etched through the mass and to the copper-containing substrate. A surface of the copper-containing substrate defines a base of the opening, and is referred to as a base surface. The base surface of the copper-containing substrate is at least partially covered by at least one of a copper oxide, a silicon oxide or a copper fluoride.

Abstract: When iron group, especially high nickel, metal alloys that contain substantial amounts of copper are pickled, a displacement coating of copper that is called a “copper kiss” often forms on the pickled surface from the dissolved copper ions in the pickling solution before the pickling solution can be rinsed away. Traditionally this has been removed by treatment with aqueous ammonia, an annoying and potentially hazardous reagent that in many instances requires expensive pollution abatement devices. In this invention, copper kiss is equally effectively removed by treatment with a mixture of sulfuric acid and hydrogen peroxide, optionally also containing hydrofluoric acid.

Abstract: A chemical mechanical polishing slurry and method for using the slurry for polishing copper, barrier material and dielectric material that comprises a first and second slurry. The first slurry has a high removal rate on copper and a low removal rate on barrier material. The second slurry has a high removal rate on barrier material and a low removal rate on copper and dielectric material. The first and second slurries at least comprise silica particles, an oxidizing agent, a corrosion inhibitor, and a cleaning agent.

Abstract: There is provided an aqueous dispersion for CMP with an excellent balance between chemical etching and mechanical polishing performance. The aqueous dispersion for CMP of the invention is characterized by comprising an abrasive, water and a heteropolyacid. Another aqueous dispersion for CMP according to the invention is characterized by comprising an abrasive, water, a heteropolyacid and an organic acid. Yet another aqueous dispersion for CMP according to the invention is characterized by comprising colloidal silica with a primary particle size of 5-100 nm, water and a heteropolyacid. Preferred for the heteropolyacid is at least one type selected from among silicomolybdic acid, phosphorotungstic acid, silicotungstic acid, phosphoromolybdic acid and silicotungstomolybdic acid. Preferred for the organic acid is at least one selected from among oxalic acid, malonic acid, succinic acid, glutaric acid, adipic acid, maleic acid, fumaric acid, phthalic acid, malic acid, tartaric acid and citric acid.

Abstract: A method for forming ultra-fine width lines on a substrate avoids occurrence of overetch/underetch defects in the many etching steps, as solder layer or copper film etching steps. With the present method the line shape is able to be achieved close to an ideal shape, so that the quality of the lines is high and the integration of the substrate is also high.