Abstract: An infrared sensor includes a supporting body having supporting body metal wiring that allows infrared rays to pass through. The supporting body is provided so as to cover one portion of an infrared detecting portion in a different plane spatially separated from that of the infrared detecting portion. The supporting body metal wiring disposed in an interior of the supporting body is such that one portion of a cobalt iron film is oxidized by a plasma discharge being carried out in an oxygen atmosphere. According to this kind of structure, infrared rays pass through the supporting body, and are absorbed by the infrared detecting portion, because of which there is no need to provide an infrared absorption layer in an upper layer of the supporting body.

Abstract: A light detector includes: a substrate; and a membrane, in which the membrane includes a first wiring layer and a second wiring layer which are opposite each other with a gap extending along a line interposed therebetween, a resistance layer which is electrically connected to each of the first wiring layer and the second wiring layer and has an electric resistance depending on a temperature, a light absorption layer, and a separation layer which is disposed between each of the first wiring layer and the second wiring layer and the light absorption layer, and in which the light absorption layer includes a first region which spreads to the side opposite to the second wiring layer with respect to the first wiring layer and a second region which spreads to the side opposite to the first wiring layer with respect to the second wiring layer.

Abstract: A display device includes a display panel and an infrared sensing module. The display panel includes an active region in which a pixel that emits light based on a data signal is disposed. The infrared sensing module transmits a first infrared light that passes through the active region and receives a second infrared light that passes through the active region to recognize an object. The wavelength of the first infrared light may have a wavelength greater than a predetermined value so that a luminance of light emitted by the pixel is not affected by operation of the infrared sensing module.

Abstract: A gas monitoring apparatus (10) identifies a target anesthetic or respiratory gas species and determines a concentration thereof. The gas monitor includes a multi-spectral mosaic filter and lens array (12), a composite thermal sensing focal plane array (26), and a signal processor (32). The mosaic filter and lens array (12) comprises a 2D array of lens structures (14) and long wave infrared (IR) band-pass filter elements (16) having a patterned thermally reflective metal disposition layer (18, 22) disposed on a first and/or second surface (20, 24) between adjacent lens structures and/or filter elements, respectively. The composite focal plane array (26) includes a plurality of individual thermal sensing focal plane arrays (28) with integrated read out integrated circuits (ROIC) that output a respective sensed channel data (36).

Abstract: A method for contactlessly establishing a temperature of a surface includes determining the temperature measurement values of the plurality of blind pixels and determining temperature measurement values of the plurality of measurement pixels. The method further includes determining a temperature measurement value and a temperature measurement values by subtracting the temperature measurement value of the first blind pixel of the plurality of blind pixels from a temperature measurement value of a second blind pixel of the plurality of blind. The method further includes correcting the temperature measurement values by pixel-associated temperature drift components in each case, wherein the temperature drift components are determined using the temperature measurement value and/or the temperature measurement value.

Abstract: A terminal display assembly may include a display screen, a light-transmission cover plate and a seal ring. The display screen may define a through hole penetrating the display screen in a thickness direction of the display screen. The light-transmission cover plate may be disposed on the display screen and cover the through hole. The seal ring may be disposed on the light-transmission cover plate and located in the through hole.

Abstract: A method for producing a bolometric detector comprising producing a stack, on an interconnect level of a read-out circuit, comprising a sacrificial layer positioned between a carrier layer and an etch stop layer, the sacrificial layer comprising a mineral material; producing a conducting via passing through the stack such that it is in contact with a conducting portion of said interconnect level; depositing a conducting layer onto the carrier layer and the via; etching the conducting layer and the carrier layer, forming a bolometer membrane electrically connected to the via by a remaining portion of the conducting layer that covers an upper part of the via; and elimination of the sacrificial layer by selective chemical etching, and such that the membrane is suspended by the via.

Abstract: The use of silicon or vanadium oxide nanocomposite consisting of graphene deposited on top of an existing amorphous silicon or vanadium oxide microbolometer can result in a higher sensitivity IR detector. An IR bolometer type detector consisting of a thermally isolated nano-sized (<one micron feature size) electro-mechanical structure comprised of Si3N4, SiO2 thins films, suspended over a cavity with a copper thin film reflecting surface is described. On top of the suspended thin film is a nanostructure composite comprised of graphene monolayers, covered with various surface densities of VoXy or amorphous nanoparticles, followed by another graphene layer. The two conducting legs are connected to a readout integrated circuit (ROIC) fabricated on a CMOS wafer underneath. The nanostructure is fabricated after the completion of the ROIC process and is integrate able with the CMOS process.

Abstract: A thermal infrared sensor array in a wafer-level package includes at least one infrared-sensitive pixel produced using silicon micro mechanics, comprising a heat-isolating cavity in a silicon substrate surrounded by a silicon edge, and a thin membrane connected to the silicone edge by of thin beams. The cavity extends through the silicon substrate to the membrane, and there are slots between the membrane, the beams and the silicon edge. A plurality of infrared-sensitive individual pixels are arranged in lines or arrays and are designed in a CMOS stack in a dielectric layer, forming the membrane, and are arranged between at least one cover wafer which is designed in the form of a cap and has a cavity and a base wafer. The cover wafer, the silicon substrate and the base wafer are connected to one another in a vacuum-tight manner and enclosing a gas vacuum.

Abstract: According to the present invention, oxidized and reduced regions of graphene can be accurately detected in a short time using a terahertz wave so as to measure the conductivity of graphene, and thus the time required to test the conductivity of graphene can be reduced. In addition, when an oxidized region exists in graphene, the oxidized region can be immediately reduced by irradiating an electromagnetic wave thereto so as to increase the conductivity of graphene and thus minimize the time required to restore graphene.

Abstract: The present disclosure relates to a detector device (300) assisted by majority current (104, 105), comprising a semiconductor layer of a first conductivity type (106), at least two control regions of the first conductivity type (100, 115), at least one detection region of a second conductivity type (101, 116) opposite to the first conductivity type and a source (110) for generating a majority carrier current (104) associated with an electrical field, wherein it further comprises isolation means (103) formed in the semiconductor layer and located between said two control regions, for deflecting the first majority carrier current generated by the first source between said two control regions and, hence, increasing the length of the first majority current path, reducing the amplitude of said first majority carrier current and, therefore, reducing the power consumption of the detector device.

Abstract: Disclosed is an environmental sensor apparatus in which a plurality of light shielding plates including an insertion space portion providing an insertion space of the circuit board and a guide portion guiding the insertion of the circuit board to the inner surface of the insertion space portion are stacked, and a circuit board is mounted inside a light shielding portion in which the plurality of light shielding plates are stacked.

Abstract: The disclosed embodiments relate to the design of a temperature sensor, which is integrated into a semiconductor chip. This temperature sensor comprises an electro-thermal filter (ETF) integrated onto the semiconductor chip, wherein the ETF comprises: a heater; a thermopile, and a heat-transmission medium that couples the heater to the thermopile, wherein the heat-transmission medium comprises a polysilicon layer sandwiched between silicon dioxide layers. It also comprises a measurement circuit that measures a transfer function through the ETF to determine a temperature reading for the temperature sensor.

Abstract: The present invention relates generally to semiconductor devices and more particularly, to a method of forming a replacement channel composed of a III-V compound semiconductor material in a doped layer of a III-V compound semiconductor substrate. The replacement channel may be formed by removing a portion of the doped layer located directly below a dummy gate stack that has been removed. A III-V compound semiconductor material may be grown in the removed the portion to form the replacement channel and a gate stack may be formed on the replacement channel.

Abstract: An imaging method includes imaging a scene having a pulsed light source and associating a symbol with the light source. The image is enhanced by inserting a symbol into the image indicative of location of the pulsed light source in the scene. The symbol overlays the image in spatial registration with the location of the pulsed light source in the scene to augment indication of the location provided by the pulsed light source. Imaging systems are also described.

Abstract: An infrared detector includes, a substrate, a lower contact layer formed on the substrate, a first light receiving layer that is formed on the lower contact layer and has a quantum well structure, an intermediate contact layer formed on the first light receiving layer, a second light receiving layer that is formed on the intermediate contact layer and has a quantum well structure, and an upper contact layer formed on the second light receiving layer. Each of the first light receiving layer and the second light receiving layer includes, a first semiconductor layer that is doped with a first conductivity-type impurity, and a second semiconductor layer that is formed on the first semiconductor layer, and is doped with a second conductivity-type impurity which compensates the first conductivity-type impurity.

Abstract: We disclose an array of Infra-Red (IR) detectors comprising at least one dielectric membrane formed on a semiconductor substrate comprising an etched portion; at least two IR detectors, and at least one patterned layer formed within or on one or both sides of the said dielectric membrane for controlling the IR absorption of at least one of the IR detectors. The patterned layer comprises laterally spaced structures.

Abstract: A programmable resistive memory has a plurality of programmable resistive devices (PRD) and at least one sensing circuit. The at least one of the programmable resistive device can include at least one programmable resistive element (PRE). The sensing circuit can include one PRD unit and a reference unit. Each unit has at least one capacitor to charge to a second supply voltage line and to discharge to the first supply voltage line through the PRE and the reference element, respectively. The capacitors are also coupled to comparators to monitor discharging voltages with respect to a reference voltage. By comparing the time difference when the comparators change their outputs, the magnitude of the PRE resistance with respect to the reference element resistance can be determined and converted into logic states.

Abstract: An image projection apparatus includes a first light source configured to emit first light with a first wavelength band, a wavelength conversion element configured to convert part of the first light into wavelength-converted light with a wavelength band different from the first wavelength band and containing a second wavelength band, a second light source configured to emit second light with a wavelength band contained in the second wavelength band, a first measurement unit configured to measure a light quantity in a first measurement wavelength band as at least part of the second wavelength band, and an acquisition unit configured to acquire information on a light quantity of the first light and a light quantity of the second light by using a measurement result by the first measurement unit.

Abstract: An infrared sensor including a substrate, an infrared absorption layer and a concave is provided. The infrared absorption layer is formed on a substrate and has a sensing surface. The concave extends toward the substrate from a sensing surface of the infrared absorption layer.

Abstract: Methods and apparatus for preventing solar damage, and other heat-related damage, to uncooled microbolometer pixels. In certain examples, a thermochroic membrane that becomes highly reflective at temperatures above a certain threshold is applied over at least some of the microbolometer pixels to prevent the pixels from being damaged by excessive heat.

Abstract: In a method for semiconductor processing, a semiconductor substrate is provided. The semiconductor substrate defines at least one first trench therein. The at least one first trench has a first depth (d1). A coating layer is deposited onto the semiconductor substrate using at least one precursor under a setting for a processing temperature (T). The coating layer defines at least one second trench having a second depth (d2) above the at least one first trench. A depth parameter (t) the second depth (d2) relative to the first depth (d1) is determined. The processing temperature (T) is then determined based on a pre-determined standard reference curve comprising a plurality of references depth parameters in a first range as a function of a plurality of reference processing temperatures in a second range.

Abstract: The invention relates to a multi-channel spectrometer device (10) for detecting/quantifying a predetermined analyte (5) in a medium (6). The device (10) comprises an input (11) for receiving radiation (7), a first plurality of optical modulators (12) adapted for transforming the radiation (7) in accordance with a first transfer function, and a second plurality of optical modulators (13) adapted for transforming the radiation (7) in accordance with a second transfer function. The spectrometer device also comprises a detector (15) for generating output signals (4) indicative for the intensity of each transformed radiation signal. The ratio of the number of optical modulators in the first plurality and the number of optical modulators in the second plurality is determined by the ratio of a reference spectrum of the predetermined analyte transformed by the first transfer function and the reference spectrum transformed by the second transfer function.

Abstract: A semiconductor device that utilizes intraband photon absorption in quantum dots to provide a capacitive photodetector. The presence of the quantum dots creates confined energy states within the photodetector device. Electrons are trapped in these confined energy states. When the photodetector is illuminated by light having an appropriate photon energy, the stored electrons are released to the conduction band, causing a change in the capacitance of the photodetector. By measuring this change in capacitance, light incident on the photodetector can be detected and quantified.

Abstract: A method for manufacturing a device (1) for detecting electromagnetic radiation. The method comprises the steps of: supplying a first substrate (400) comprising a reading circuit (340), at least two first contact plugs (343, 344) and at least one first annular bonding element (345) surrounding the first contact plugs (343, 344); supplying a second substrate comprising a cap (210), an annular side wall forming with the cap (210) a cavity filled with a sacrificial material and a detection structure (100) housed in the cavity. The method further comprising the steps of bonding the second substrate (200) on the first substrate (400); arranging at least one opening (212) in the second substrate (200); selective elimination of the sacrificial material; and closing the opening (212) under at least a primary vacuum.

Abstract: An optical waveguide detector is provided, which includes: a silicon waveguide layer and a germanium waveguide layer. The germanium waveguide layer includes a first heavily germanium-doped area and a germanium-undoped area. A first surface of the germanium waveguide layer includes a surface of the first heavily germanium-doped area, and the first surface is a surface of the germanium waveguide layer away from the silicon waveguide layer in the first direction. A width of the first heavily germanium-doped area is less than or equal to half a width of the first surface, and a thickness of the first heavily germanium-doped area is greater than or equal to 5 nm and less than or equal to 200 nm. According to embodiments, a bandwidth of the optical waveguide detector can be effectively increased.

Abstract: A sensor device is provided and includes a first transistor, a second transistor, a third transistor, and a photosensor. The first transistor has a first gate, a first drain, and a first source. The first drain is coupled to a first power line and has a concave surface, and the first source is disposed corresponding to the concave surface. The second transistor has a second source, coupled to the first gate. The third transistor has a third gate, a third drain, and a third source, the third drain is coupled to the first source, the third source is coupled to the data line, and the third gate is coupled to the readout line. The photosensor is coupled to the first gate.

Abstract: We disclose herein an infra-red (IR) detector comprising a substrate comprising at least one etched portion and a substrate portion; a dielectric layer disposed on the substrate. The dielectric layer comprises at least one dielectric membrane, which is adjacent to the etched portion of the substrate. The detector further comprises a first sensing area and a second sensing area each located in a dielectric membrane and a plurality of thermocouples. At least one thermocouple comprises first and second thermal junctions. The first thermal junction is located in or on the first sensing area and the second thermal junction is located in or on the second sensing area.

Abstract: A modulated MTS antenna including a metasurface fabricated from metallized cylinders on a ground plane. The antenna structure can be designed to operate in the Gigahertz or Terahertz frequency band and to have a well defined directivity. The MTS antenna may be micromachined out of a silicon wafer using deep reactive ion etching (DRIE).

Abstract: A THz bolometer detector includes a directional antenna 1 that receives a THz wave having a wavelength ? and radiates the received THz wave, a reception antenna 2 that is provided so as to face the directional antenna 1, and a bolometer 4 that detects heat generation due to a current flowing in the reception antenna 2. The directional antenna 1 overlaps the reception antenna 2 in plan view, and a longitudinal length of the directional antenna 1 is set to be less than a longitudinal length of the reception antenna 2.

Abstract: There is provided a semiconductor detector. According to an embodiment, the semiconductor detector may include a semiconductor detection material including a first side and a second side opposite to each other. One of the first side and the second side is a ray incident side that receives incident rays. The detector may further include a plurality of pixel cathodes disposed on the first side and a plurality of pixel anodes disposed on the second side. The pixel anodes and the pixel cathodes correspond to each other one by one. The detector may further include a barrier electrode disposed on a periphery of respective one of the pixel cathodes or pixel anodes on the ray incident side. According to the embodiment of the present disclosure, it is possible to effectively suppress charge sharing between the pixels and thus to improve an imaging resolution of the detector.

Abstract: A precise photoelectric sighting system that is simple in shooting calibration, quick and accurate in sighting, adapts to any environmental factor, and may greatly reduce the use of sensors and realize binocular sighting. The system includes a field-of-view acquisition unit, a display unit, a ranging unit and a sighting circuit unit; and precise shooting under any environment is realized by applying the integrated precise photoelectric sighting system. The calibration method of the photoelectric sighting system enables quick and precise calibration.

Abstract: A detector. The detector includes a first collector, a first interface layer on the first collector, a first absorber on the first interface layer, a second interface layer on the first absorber, and a second collector on the second interface layer. The first absorber is configured to absorb photons to generate electron-hole pairs. The first interface layer may include a barrier configured to impede the flow of majority carriers from the first absorber to the first collector. The second barrier may include a barrier configured to impede the flow of majority carriers from the first absorber, or from a second absorber, to the second collector.

Abstract: The use of silicon or vanadium oxide nanocomposite consisting of graphene deposited on top of an existing amorphous silicon or vanadium oxide microbolometer can result in a higher sensitivity IR detector. An IR bolometer type detector consisting of a thermally isolated nano-sized (<one micron feature size) electro-mechanical structure comprised of Si3N4, SiO2 thins films, suspended over a cavity with a copper thin film reflecting surface is described. On top of the suspended thin film is a nanostructure composite comprised of graphene monolayers, covered with various surface densities of VoXy or amorphous nanoparticles, followed by another graphene layer. The two conducting legs are connected to a readout integrated circuit (ROIC) fabricated on a CMOS wafer underneath. The nanostructure is fabricated after the completion of the ROIC process and is integrate able with the CMOS process.

Abstract: A light receiving element includes: a semiconductor layer including a first layer, a light absorbing layer, a second layer, and a third layer, the semiconductor layer having a plurality of mesas, a terrace, and a groove; a first electrode provided on the mesas and electrically connected to the third layer; a first bump provided on the first electrode and electrically connected to the first electrode; a second electrode provided on a portion extending from the terrace to an inner side of the groove and electrically connected to the first layer; and a second bump larger than the first bump, is provided on the terrace, and is electrically connected to the second electrode, wherein the mesas and the terrace include the semiconductor layer, the groove extends to the first layer, and the second electrode is in contact with the first layer on an inner side of the groove.

Abstract: Disclosed is a detector for a positron imaging unit, comprises a hollow body with an inner cylindrical wall and an outer wall spaced apart from the inner cylindrical wall. The hollow body includes a scintillating material, suitable to emit photons once hit by a 511 keV ?-ray, and one or more pairs of photo-detecting units (e.g. comprising PMTs or SiPM) for detecting photons emitted by the scintillating material; each photo-detecting unit of a pair being placed at opposite ends of the inner cylindrical wall along a radial direction. The scintillating material has scintillation decay time ? lower than 10 ns, an atomic number greater than 10, and a high scintillation yield greater than 8,000 photons/MeV, and comprises a mixture of xenon and argon. An imaging unit including the detector and a method to estimate the differential of the dose of radiation provided in a subject to cancer cells and to surrounding tissues in the course of hadrotherapy is also disclosed.

Abstract: An infrared detector and an infrared sensor including the infrared detector are provided. The infrared detector includes a plurality of quantum dots spaced apart from each other and including a first component, a first semiconductor layer covering the plurality of quantum dots, and a second semiconductor layer covering the first semiconductor layer.

Abstract: A sensor circuit includes an illuminance sensor to detect illuminance of ambient light; and a proximity sensor to drive a light emitter, and to detect proximity of an object, based on an intensity of light emitted by the emitter and reflected on the object. The sensor circuit further includes at least one terminal among: a drive terminal for driving the light emitter; a detection result output terminal used for outputting a detection result of one of the sensors; an input/output terminal used for inputting and outputting data compliant with a communication protocol; and a clock terminal used for inputting a clock signal compliant with the communication protocol, and a writable nonvolatile memory in which trimming data for correcting an individual variation of a characteristic of the sensor circuit is to be written. The trimming data input from at least one of the terminal is written in the memory.

Abstract: A solar cell system is formed with a dynamic surface relief grating. Movement members are actuated by a controller to produce a force on the reflective surface. The reflective surface deforms in response to the force creating a surface relief grating that can adapt to changing light conditions.

Abstract: An electromagnetic wave detector that selectively detects electromagnetic waves of wavelength ?A includes a temperature detection unit that includes: a substrate including a cavity portion; a wavelength selection structure that generates a surface plasmon resonance with an electromagnetic wave of a predetermined wavelength ?A for converting to heat and absorbing, and a detection film that detects the absorbed heat; and a support structure that retains the temperature detection unit above the cavity portion; wherein the support structure further includes a reflection structure that reflects the electromagnetic waves of the absorption wavelength of the support structure.

Abstract: A sensor device including one or more sensor elements and one or more optical filters is provided. The one or more optical filters each include a plurality of dielectric layers and a plurality of metal layers stacked in alternation. The metal layers are intrinsically protected by the dielectric layers. In particular, the metal layers have tapered edges that are protectively covered by one or more of the dielectric layers.

Abstract: The present invention relates to an underwater photographic lighting device which comprises: a flashlight body fully sealed by a seal, the interior of the flashlight body is provided with waterproof through holes, the flashlight body is respectively connected to a lamp head and a flashlight via conductive connecting cables, the lamp head is sealed by a seal, and connecting parts can be respectively dismounted from the flashlight body; and a power supply component sealed by a seal and connected to the flashlight body. Every part of the underwater photographic lighting device of the present invention is sealed, so the waterproof function is better; and each part is independent, and therefore can be optionally replaced and maintained. The battery module can be replaced and upgraded according to future need, and can be independently charged, so that the life cycle of the whole device is extended.

Abstract: A Ge-on-Si photodetector constructed without doping or contacting Germanium by metal is described. Despite the simplified fabrication process, the device has responsivity of 1.24 A/W, corresponding to 99.2% quantum efficiency. Dark current is 40 nA at ?4 V reverse bias. 3-dB bandwidth is 30 GHz.

Abstract: An optical sensor (10) includes a first switch (SW1) and a second switch (SW2), these switches are switched between a first step and a second step and thus the coupling of light receiving portions (photodiodes) and three analog-to-digital converters (ADCs) is switched. In the first step of the switch, photocurrents generated in a blue light receiving portion (BLUE), a green light receiving portion (GREEN) and a red light receiving portion (RED) are processed in real time. In the second step, photocurrents generated in an infrared light receiving portion (Ir), an environmental light receiving portion (CLEAR) and the green light receiving portion (GREEN) are processed. The photocurrents of the infrared light receiving portion (Ir) and the environmental light receiving portion (CLEAR) generated in the first step are calculated from a ratio of the two photocurrents measured in the green light receiving portion (GREEN).

Abstract: A semiconductor junction may include a first layer and a second layer. The first layer may include a first semiconductor material and the second layer may be deposited on the first layer and may include a second material. The valence band maximum of the second material is higher than a conduction band minimum of the first semiconductor material, thereby allowing a flow of a majority of free carriers across the semiconductor junction between the first and second layers to be diffusive.

Abstract: A photodetector structure having a barrier layer disposed between a pair of like-conductively doped semiconductor layers, the barriers layer having a surface area smaller than the surface area of the upper one of the pair of semiconductor layers. A fill material is disposed between outer peripheral edges of the barrier layer and a region between outer peripheral edges of the first and second layers.

Abstract: The present invention discloses a thermal pile sensing structure integrated with one or more capacitors, which includes: a substrate, an infrared sensing unit and a partition structure. The infrared sensing unit includes a first and a second sensing structure. A hot junction is formed between the first and the second sensing structures at a location where the first and the second sensing structures are close to each other. A cold junction is formed between the partition structure and the first sensing structure at a location where these two structures are close to each other. Another cold junction is formed between the partition structure and the second sensing structure at a location where these two structures are close to each other. A temperature difference between the hot junction and the cold junction generates a voltage difference signal. Apart of the partition structure forms at least one capacitor.

Abstract: Disclosed are a photo detector capable of adjusting sensitivity and a unit pixel of an image sensor using the photo detector.

Abstract: A radiation detector system is provided that includes a semiconductor detector, plural pixelated anodes, and a side anode. The semiconductor detector has a surface. The pixelated anodes are disposed on the surface, and are arranged in a grid defining a footprint. The side anode is disposed outside of the footprint defined by the plural pixelated anodes, and has a length extending along at least two of the pixelated anodes.

Abstract: A light-receiving apparatus includes: a light-receiving device array including a semiconductor structure including a plurality of semiconductor mesas, a plurality of grooves each of which defines one of the semiconductor mesas, a plurality of first electrodes disposed on upper surfaces of the semiconductor mesas, a plurality of first bump electrodes disposed on the first electrodes, and a metal body disposed on a bottom surface of at least one of the grooves, the metal body being spaced apart from the first electrodes and the first bump electrodes; a semiconductor device processing an electric signal from the light-receiving device array; and an underfill disposed between the light-receiving device array and the semiconductor device. The metal body is spaced apart from a surface of the semiconductor device. The semiconductor device is joined to the light-receiving device array through the first bump electrodes.