Abstract: A device for analyzing a sample using radiation in the terahertz frequency range is provided. The device comprises a transmitter (3) comprising a THz signal generator (5, 6, 7; 51) for generating an electromagnetic THz signal, the THz signal generator comprising a nonlinear transmission line (7; 52). The device further comprises a surface plasmon polariton generating unit (8) adapted to convert the THz signal into a surface plasmon polariton. The transmitter (3) and the surface plamon polariton generating unit (8) are either integrated on one common substrate or on two separate substrates.

Abstract: Thermo-optical array devices and methods of processing thermo-optical array devices are disclosed. One method of processing thermo-optical array devices includes forming an (001) oriented titanium dioxide material on a bolometer material, and forming a vanadium dioxide material on the (001) oriented titanium dioxide material. One thermo-optical array device includes a bolometer material, a titanium dioxide material on the bolometer material, and a vanadium dioxide material on the titanium dioxide material, wherein the vanadium dioxide material has an optical transition temperature of less than 67 degrees Celsius.

Abstract: An embodiment relates to a method of manufacturing a device comprising a substrate having a front side and a back-side, a nanowire disposed on the back-side and an image sensing circuit disposed on the front side, wherein the nanowire is configured to be both a channel to transmit wavelengths up to a selective wavelength and an active element to detect the wavelengths up to the selective wavelength transmitted through the nanowire.

Abstract: Apparatus and methods for proximity detection include a passive proximity detecting device for detecting humans within a detection area and controlling a controlled device. A sensor includes a plurality of pixels arranged in a substantially contiguous array. Each pixel is configured to detect infrared radiation emitted by an object in a predetermined temperature range within the detection area. In response to detecting the object a detection signal is generated having a signal level proportional to the infrared radiation emitted by said object received by the sensor. A processor in communication with the sensor is configured to receive said detection signal, to derive an object distance and a second object parameter using, a signal level of the detection signal.

Abstract: An infrared sensor with a microstructure has a multiplicity of sensor rods protruding from a sensor base and arranged axially parallel to one another. Each of the sensor rods is designed as a thermocouple, in that a first rod end, arranged on the sensor base, is electrically connected to an opposite free second rod end by both a first and a second electrically conductive rod element. The two rod elements have a different Seebeck coefficient, and the first rod element is formed as a hollow profile and the second rod element is arranged in the first rod element such that each thermocouple is formed as a single rod with a small standing area on the sensor base.

Abstract: Optopair for use in sensors and analyzers of gases such as methane, and a fabrication method therefor is disclosed. It comprises: a) an LED, either cascaded or not, having at least one radiation emitting area, whose spectral maximum is de-tuned from the maximum absorption spectrum line of the gas absorption spectral band; and b) a Photodetector, whose responsivity spectral maximum can be either de-tuned from, or alternatively completely correspond to the maximum absorption spectrum line of the absorption spectral band of the gas. Modeling the LED emission and Photodetector responsivity spectra and minimizing the temperature sensitivity of the optopair based on the technical requirements of the optopair signal registration circuitry, once the spectral characteristics of the LED and Photodetector materials and the temperature dependencies of said spectral characteristics are determined, provides the LED de-tuned emission and Photodetector responsivity target peaks respectively.

Abstract: Optopair for use in sensors and analyzers of gases such as methane, and a fabrication method therefor is disclosed. It comprises: a) an LED, either cascaded or not, having at least one radiation emitting area, whose spectral maximum is de-tuned from the maximum absorption spectrum line of the gas absorption spectral band; and b) a Photodetector, whose responsivity spectral maximum can be either de-tuned from, or alternatively completely correspond to the maximum absorption spectrum line of the absorption spectral band of the gas. Modeling the LED emission and Photodetector responsivity spectra and minimizing the temperature sensitivity of the optopair based on the technical requirements of the optopair signal registration circuitry, once the spectral characteristics of the LED and Photodetector materials and the temperature dependencies of said spectral characteristics are determined, provides the LED de-tuned emission and Photodetector responsivity target peaks respectively.

Abstract: The present invention relates to a method for non-destructive, contact or non-contact inspection of composite assemblies using radiation having a frequency in the terahertz range (10 GHz-10 THz) of the spectrum, whereby said method is implemented as an embodiment of the system for non-destructive, contact or non-contact inspection of composite assemblies using terahertz radiation, that is also claimed under the present invention. Said method enables the forming of a two or three-dimensional image of the material structure of an assembly of composite materials, from which image detection and analysis of material conditions of the composite materials forming said composite assemblies is possible, irrespective of the way that the composite materials forming said composite assemblies were joined together, and without the need for a priori knowledge about the structural characteristics, shape or configuration of said composite materials (for instance layered, foam, placed on metal substrate).

Abstract: An infrared sensor module includes: an infrared sensor device disposed on a substrate and configured to receive infrared signals; a signal processing circuit device configured to process an output from the infrared sensor device; a metal case which is provided at a predetermined distance from the infrared sensor device, which includes a light incident window provided with an optical system for coupling an image on the infrared sensor device from external infrared signals, and which accommodates the infrared sensor device and the signal processing circuit device; and a sensor cover which is disposed between the infrared sensor device and the case and the signal processing circuit device, and which includes a light-transmitting portion configured to guide the infrared signals entering via the optical system to the infrared sensor device.

Abstract: A pixel interconnect circuit that can be added to a focal plane array to enable subpixel location capability (subpixel sensing) for an imaged point source, facilitating very high frame rate operation. The pixel interconnect is typically added as a circuit component within the readout integrated circuit. The interconnect function can be turned on or off flexibly. It allows very low pixel count arrays, such as 128×128 pixels, to achieve the positional accuracy of multi-megapixel arrays. In turn, these small arrays can be clocked at very fast frame rates for enhanced threat and fast event detection. Existing systems can be upgraded by adding the pixel interconnect, which will greatly improve tracking and position accuracy without increasing data processing requirements. By modifying the focal plane while leaving other components unchanged, the pixel interconnect provides an economical upgrade for threat warning and tactical sensor systems.

Abstract: A system for short-range laser detection and ranging of targets can provides rapid three-dimensional, e.g., angle, angle, range, scans over a wide field-of-view. Except for the final transmit/receive lens, the disclosed LADAR system can be implemented in an all-fiber configuration. Such system is compact, low cost, robust to misalignment, and lends itself to eye-safe operation by making use of available pulsed 1550 nm fiber lasers and amplifier sources. The disclosed LADAR system incorporates many novel features that provide significant advantages compared to current LADAR systems. The disclosed system uses a monostatic fiber-based transmitter/receiver, a fiber beam scanner based on a laterally vibrating fiber, and a position sensor to monitor the transmitted beam position.

Abstract: A thermal detector includes a substrate; a support member supported on the substrate interposed by a cavity; a heat-detecting element formed on the support member; a light-reflecting layer formed at a position spaced apart from the heat-detecting element in at least a portion of a peripheral region of the heat-detecting element on the support member; a light-absorbing layer formed on the heat-detecting element and the light-reflecting layer; and a thermal transfer member that is connected to the heat-detecting element by a connector, the thermal transfer member including a connecting portion connected to the heat-detecting element and a thermal collecting portion disposed inside the light-absorbing layer and having a surface area larger than a surface area of the connecting portion as seen in plan view, the thermal collecting portion being optically transmissive at least with respect to light of a prescribed wavelength.

Abstract: This disclosure discusses various methods for manufacturing uncooled infrared detectors by using foundry-defined silicon-on-insulator (SOI) complementary metal oxide semiconductor (CMOS) wafers, each of which may include a substrate layer, an insulation layer having a pixel region and a wall region surrounding the pixel region, a pixel structure formed on the pixel region of the insulation layer, a wall structure formed adjacent to the pixel structure and on the wall region of the insulation layer, a dielectric layer covering the pixel structure and the wall structure, a pixel mask formed within the dielectric layer and for protecting the pixel structure during a dry etching process, and a wall mask formed within the dielectric layer and for protecting the wall structure during the dry etching process, thereby releasing a space defined between the wall structure and the pixel structure after the dry etching process.

Abstract: A bolometer and a preparation method thereof. The bolometer includes: an infrared detection element (1) and a readout circuit (2), wherein the infrared detection element (1) is formed on one side of a first substrate (100), and an edge of the infrared detection element (1) is provided with an electrode hole (9), and the readout circuit (2) is formed on one side of a second substrate (200) and the readout circuit (2) has an electrode, the first substrate (100) is formed thereon with a silicon via (8) passing through the first substrate (100) and filed with a conductive material, the electrode hole (9) of the infrared detection element (1) is electrically connected to the electrode of the readout circuit (2) via the conductive material filled in the silicon via (8).

Abstract: A non-destructive sugar content measuring apparatus is provided and includes a measuring sensor portion for including a spectral sensor which receives a near infrared ray from the light which is reflected by the flesh FB of the fruit F of which the sugar content is measured, an LED light source which has LEDs circularly arranged, an optical sensor which receives light reflected by a flesh of a fruit F, and a temperature sensor; a casing including a measuring sensor portion and has a panel portion which has a digital display for displaying a brix value as a digital value and operational switches, the panel portion and the operational switches being mounted on a front face thereof; a main circuit board PB for including a Central Processing Unit (CPU) which is embedded in the casing and processes electric signals from the light sensor and performs a calculation and determination

Abstract: A terahertz detection assembly generally has a light generating apparatus configured to generate at least one illuminating light pattern and a substrate member positioned proximate to the light generating apparatus. The substrate member includes a semiconductive portion configured to receive at least a portion of the illuminating light pattern such that a conductive path is defined within the semiconductive portion. At least one waveguide is coupled to the semiconductive portion such that the waveguide is adjacent to the conductive path. The waveguide is configured to receive at least a portion of the illuminating light pattern such that the pattern is moving along the waveguide. The waveguide is further configured to receive a plurality of terahertz electromagnetic waves that are transmitted within the waveguide in the same direction as the motion of the illuminating light pattern to facilitate the detection and characterization of the terahertz electromagnetic waves.

Abstract: A method for measuring a distance between an electronic device and an object is provided. The method includes: starting to emit infrared light to an object when the electronic device is parallel to a length of the object which is perpendicularly placed and is configured to reflect the received infrared light to a photodiode; stop the timer to acquire a period of time when the photodiode receives the reflected-infrared light from the object; calculating a transmission distance of the infrared light during the period of time; and calculating the distance between the electronic device and the object according to a first distance from the infrared light source to the photodiode and the transmission distance of the infrared light source during the period of time.

Abstract: Embodiments of the invention pertain to a method and apparatus for sensing infrared (IR) radiation. In a specific embodiment, a night vision device can be fabricated by depositing a few layers of organic thin films. Embodiments of the subject device can operate at voltages in the range of 10-15 Volts and have lower manufacturing costs compared to conventional night vision devices. Embodiments of the device can incorporate an organic phototransistor in series with an organic light emitting device. In a specific embodiment, all electrodes are transparent to infrared light. An IR sensing layer can be incorporated with an OLED to provide IR-to-visible color up-conversion. Improved dark current characteristics can be achieved by incorporating a poor hole transport layer material as part of the IR sensing layer.

Abstract: A vertically stacked thermopile and an IR sensor using said stacked thermopiles are provided. The vertically stacked thermopile may include multiple thermocouples stacked vertically on one another. The thermocouples may be connected in series, parallel, or a combination of series and parallel. One or more vertically stacked thermopiles may be included in an IR sensor and the thermopiles may be connected in series, parallel, or a combination of series and parallel.

Abstract: An infrared (IR) detector may include a substrate, circuitry carried by the substrate, and a metal-black layer over the thermometric element. The circuitry may include a thermometric element with a measureable thermometric property. The IR detector may include a dielectric layer covering the metal-black layer, and the circuitry provides a value for IR radiation absorbed by the metal-black layer.

Abstract: A diode sensor matrix including a multitude of diodes is configured to detect, in a first measuring cycle, a first sensor value at a first diode or at diodes of a first group of diodes while operating the first diode and/or the diodes of the first group in the flow direction and operating the diodes, which share an anode or cathode or terminal with the first diode or with any of the diodes of the first group, in the reverse direction, and to detect, in a second measuring cycle, a second sensor value at a second diode among the diodes which share an anode or cathode terminal with the first diode or with any of the diodes of the first group, while operating the second diode in the flow direction and operating the first diode or a diode from the first group in the reverse direction.

Abstract: Ultraviolet (UV), Terahertz (THZ) and Infrared (IR) radiation detecting and sensing systems using graphene nanoribbons and methods to making the same. In an illustrative embodiment, the detector includes a substrate, single or multiple layers of graphene nanoribbons, and first and second conducting interconnects each in electrical communication with the graphene layers. Graphene layers are tuned to increase the temperature coefficient of resistance to increase sensitivity to IR radiation. Absorption over a wide wavelength range of 200 nm to 1 mm are possible based on the two alternative devices structures described within. These two device types are a microbolometer based graphene film where the TCR of the layer is enhanced with selected functionalization molecules. The second device structure consists of a graphene nanoribbon layers with a source and drain metal interconnect and a deposited metal of SiO2 gate which modulates the current flow across the phototransistor detector.

Abstract: Provided is an infrared image pickup device, including: a plurality of bolometer elements that receive light from a subject; and a plurality of readout circuits respectively connected to the plurality of bolometer elements, the plurality of bolometer elements and the plurality of readout circuits being connected to a first input voltage wiring and a second input voltage wiring. Each of the plurality of readout circuits includes: a bias circuit that applies a bias voltage to corresponding one of the plurality of bolometer elements; a bias-canceling circuit that removes an offset current of the corresponding one of the plurality of bolometer elements; an integration circuit connected to a connection point between the bias circuit and the bias-canceling circuit, that integrates a differential current between the bias circuit and the bias-canceling circuit; and a saturation-prevention circuit that prevents saturation of an output voltage of the integration circuit.

Abstract: Embodiments of the invention are directed to an improved device for sensing infrared (IR) radiation with up-conversion to provide an output of electromagnetic radiation having a shorter wavelength than the incident IR radiation, such as visible light. The device comprises an anode, a hole blocking layer to separate an IR sensing layer from the anode, an organic light emitting layer that is separated from the anode by the IR sensing layer, and a cathode. The hole blocking layer assures that when a potential is applied between the anode and the cathode the organic light emitting layer generates electromagnetic radiation only when the IR sensing layer is irradiated with IR radiation.

Abstract: Embodiments of the invention are directed to IR photodetectors with gain resulting from the positioning of a charge multiplication layer (CML) between the cathode and the IR sensitizing layer of the photodetector, where accumulating charge at the CML reduces the energy difference between the cathode and the CML to promote injection of electrons that result in gain for an electron only device. Other embodiments of the invention are directed to inclusion of the IR photodetectors with gain into an IR-to-visible up-conversion device that can be used in night vision and other applications.

Abstract: The present invention relates to a device for creating and coherently detecting terahertz radiation, comprising a laser light source (1), a transmission antenna (2) that can be activated by the laser light source (1) for creating the terahertz radiation, and a receiver with a receiver antenna (3) that can be activated by the same laser light source (1), wherein the transmission antenna (2) comprises a photo diode as a light-sensitive element and the receiver antenna (3) a fast photo-conductor as a light-sensitive element. The invention further relates to a use of such a device for analyzing a sample.

Abstract: A unit pixel of a depth sensor includes a light-receiver configured to perform photoelectric conversion of an incident light to output an electrical signal and at least two sensors adjacent to the light-receiver to receive the electrical signal from the light-receiver such that a line connecting the sensors forms an angle greater than zero degrees with respect to a first line, the first line passing through a center of the light-receiver in a horizontal direction.

Abstract: A photoconductive device that includes a semiconductor substrate, an antenna assembly, and a photoconductive assembly with one or more plasmonic contact electrodes. The photoconductive assembly can be provided with plasmonic contact electrodes that are arranged on the semiconductor substrate in a manner that improves the quantum efficiency of the photoconductive device by plasmonically enhancing the pump absorption into the photo-absorbing regions of semiconductor substrate. In one exemplary embodiment, the photoconductive device is arranged as a photoconductive source and is pumped at telecom pump wavelengths (e.g., 1.0-1.6 ?m) and produces milliwatt-range power levels in the terahertz (THz) frequency range.

Abstract: This optical detector unit is a hybrid unit operating in a given wavelength range and includes, superposed, a first optical detector comprising detecting elements formed in a semiconductor structure, each detecting element being intended for converting a flux of incident photons into an electrical signal; and a first read out circuit, for reading the electrical signal from each detecting element. The optical detector unit furthermore has an imaging system with a second optical detector intended for increasing the operating wavelength range of the optical detector unit and a second read out circuit for reading the electrical signals from the detecting elements of the second optical detector. The first and second read out circuit are integrated together, so as to form a common read out circuit.

Abstract: This bolometric array detector for detecting electromagnetic radiation in a predetermined range of infrared or terahertz wavelengths comprises a substrate and an array of bolometric micro-plates for detecting said radiation that are suspended above the substrate by support arms. It comprises a metallic membrane located above and around each micro-plate and in which openings are formed; said openings in metallic membrane are periodically located in it along at least one predetermined axis with a period equal to or less than ? n , where ? is a wavelength in the wavelength range that is to be detected and n is the average refraction index of the medium that separates the micro-plate from metallic membrane.

Abstract: A method to identify the wavelength of incoming light is disclosed. The method includes steps to measure a first photocurrent by setting the avalanche photodiode (APD) in a photodiode (PD) mode and a second photocurrent by setting the APD in the APD mode, and to compare a ratio of the two photocurrents with prepared references.

Abstract: A system for controlling a boundary of spreading liquid adhesive on a surface is disclosed. The system includes one or more ultra-violet (UV) sources configurable to emit UV light onto the liquid adhesive; and a control circuit coupled to the one or more UV sources and configured to control the one or more UV sources to selectively apply the UV light at selected locations on the liquid adhesive to cure the adhesive and prevent its further spread at those locations.

Abstract: A photosensor device includes a plurality of first well structures, a light shielding layer, and a plurality of second well structures. The first well structures are disposed in a substrate. The light shielding layer disposed is on the substrate; it covers a portion of the first well structures and exposes the rest portion of the first well structures. The covered first well structures are adjacent to the exposed first well structures exposed. The exposed first well structures generate a first photocurrent according to incident light. The second well structures generate a second photocurrent according to incident light. A total surface area of the second well structures is substantially equal to a total surface area of the exposed first well structures. A method for determining the incident light is also provided.

Abstract: An infrared detection device including an infrared heat detector and a connection pad each spaced apart from an etching stop layer by a non-zero distance substantially equal relatively to each other, wherein first and second electrically conducting vias are respectively electrically connected to first and second portions of a metal line of a penultimate level of electrical interconnections, and wherein an empty space formed in a first inter-metal dielectric layer surrounds the first electrically conducting via and extends under the infrared heat detector.

Abstract: Disclosed is an electronic apparatus in which a thermoelectric conversion element and at least one of a photoelectric conversion element and a transistor or a diode are monolithically integrated, or which prevents interference between a p-type thermoelectric conversion unit and an n-type thermoelectric conversion unit. This electronic apparatus includes a thermoelectric conversion element (100) including a semiconductor layer of stacked heterostructure (38) which performs thermoelectric conversion using Seebeck effect and at least one of a photoelectric conversion element (102) in which at least a portion of the semiconductor layer of stacked heterostructure (38) performs photoelectric conversion and a transistor (104) or a diode having at least a portion of the semiconductor layer of stacked heterostructure (38) as an operating layer.

Abstract: Devices, methods, and systems relating to infrared imager devices, methods for providing infrared imagers, methods of operating infrared imagers, and infrared imager systems are disclosed. An infrared imager system includes a number of lenses, a beam splitter, an imager array, and a thermo-optical array, wherein the beam splitter directs light to the imaging array and to the thermo-optical array.

Abstract: Dual mode SAL/IR imaging seekers are described herein. In some embodiments, a dual-mode SAL/IR imaging seeker described herein includes a focal plane array (FPA), an objective optical assembly providing a common optical path to the FPA for incident laser radiation of a first wavelength band and incident ambient radiation of a second wavelength band non-overlapping with the first wavelength band, a first optical filter operable to selectively pass the incident laser radiation to the FPA in a transmissive mode and selectively block the incident laser radiation from the FPA in a non-transmissive mode and a second optical filter assembly operable to selectively pass the incident ambient radiation to the FPA in a transmissive mode and selectively block the incident ambient radiation from the FPA in a non-transmissive mode.

Abstract: Nanoparticles, methods of manufacture, devices comprising the nanoparticles, methods of their manufacture, and methods of their use are provided herein. The nanoparticles and devices having photoabsorptions in the range of 1.7 ?m to 12 ?m and can be used as photoconductors, photodiodes, phototransistors, charge-coupled devices (CCD), luminescent probes, lasers, thermal imagers, night-vision systems, and/or photodetectors.

Abstract: The thermal detector includes a substrate, a thermal detector element including a light absorbing film, a support member supporting the thermal detector element and supported on the substrate so that a cavity is present between the member and the substrate, and at least one auxiliary support post of convex shape protruding from either the substrate or the support member towards the other. The height of the at least one auxiliary support post is shorter than the maximum height from the substrate to the support member.

Abstract: An infrared (IR) sensor package includes a heat sink defining a first interior space and a radiation trap adjacent the first interior space. An IR sensor having a radiation-sensitive region which detects IR radiation is arranged within the first interior space of the heat sink. A first optical element and a second optical element are arranged at respective ends of the radiation trap. The radiation trap is configured to allow for the passage of a first portion of IR radiation incident the second optical element, through the first optical element, and into communication with the IR sensor element, and to absorb a second portion of IR radiation incident the second optical element.

Abstract: There is provided a high responsivity device for thermal sensing in a Terahertz (THz) radiation detector. A load impedance connected to an antenna heats up due to the incident THz radiation received by the antenna. The heat generated by the load impedance is sensed by a thermal sensor such as a transistor. To increase the responsivity of the sense device without increasing the thermal mass, the device is located underneath a straight portion of an antenna arm. The transistor runs substantially the entire length of the antenna arm alleviating the problem caused by placing large devices on the side of the antenna and the resulting large additional thermal mass that must be heated. This boosts the responsivity of the pixel while retaining an acceptable level of noise and demanding a dramatically smaller increase in the thermal time constant.

Abstract: An apparatus and method for reducing nonlinearity artifacts in an IR imaging system applies a non-linear correcting function to signals received from a microbolometer. The non-linear correcting function can be a second-order polynomial, a third-order polynomial, some other formula, or a table from which corrections can be interpolated. In embodiments, the correcting function is automatically adjusted according to an ambient temperature measurement, to which a non-linear correction can be applied, either in a separate step or as an adjustment to the correcting function applied to the microbolometer signals.

Abstract: An optical proximity sensor and housing for the same are disclosed. The housing is provided with at least two support structures and at least two modules. A first of the support structures transfers vertical forces applied to one end of a module to an opposite end of the opposite module. A second of the support structures inhibits a pivoting of the modules about the first support structure.

Abstract: This disclosure provides systems, methods and apparatus for forming microbolometers on glass substrates. In one aspect, the formation of microbolometers on glass substrates can reduce the size and cost of the resultant array and associated circuitry. In one aspect, a portion of the measurement and control circuitry can be formed by thin-film deposition on the glass substrate, while sensitive measurement and control circuitry can be formed on ancillary CMOS substrates. In one aspect, the microbolometers may be packaged using a variety of techniques, including a wafer-level packaging process or a pixel-level packaging process.

Abstract: A chip-scale, air-clad semiconductor pedestal waveguide can be used as a mid-infrared (mid-IR) sensor capable of in situ monitoring of organic solvents and other analytes. The sensor uses evanescent coupling from a silicon or germanium waveguide, which is highly transparent in the mid-IR portion of the electromagnetic spectrum (e.g., between ?=1.3 ?m and ?=6.5 ?m for silicon and ?=1.3 ?m and ?=12.0 ?m for germanium), to probe the absorption spectrum of the fluid surrounding the waveguide. Launching a mid-IR beam into the waveguide exposed to a particular analyte causes attenuation of the evanescent wave's spectral components due to absorption by carbon, oxygen, hydrogen, and/or nitrogen bonds in the surrounding fluid. Detecting these changes at the waveguide's output provides an indication of the type and concentration of one or more compounds in the surrounding fluid.

Abstract: A plasmonic detector is described which can resonantly enhance the performance of infrared detectors. More specifically, the disclosure is directed to enhancing the quantum efficiency of semiconductor infrared detectors by increasing coupling to the incident radiation field as a result of resonant coupling to surface plasma waves supported by the metal/semiconductor interface, without impacting the dark current of the device, resulting in an improved detectivity over the surface plasma wave spectral bandwidth.

Abstract: The invention utilizes the changes in physical properties of materials during a solid-solid phase transition in order to actuate microactuators. The substantial changes in properties during insulator-to-metal transitions (IMTs) of some materials are useful for controlling purposes. Methods of using the microactuators are also explained.

Abstract: A manufacture having an electrical response to incident photons includes a semiconductor substrate; a chalcogen-doped semiconductor active layer on a first side of the substrate; a first contact in electrical contact with the active layer; and a second contact in electrical contact with the substrate; wherein, photons incident upon the active layer cause a variation in current between the first and second contacts.

Abstract: Spectroscopy apparatuses oriented to the critical angle of the sample are described that detecting the spectral characteristics of a sample wherein the apparatus consists of an electromagnetic radiation source adapted to excite a sample with electromagnetic radiation introduced to the sample at an angle of incidence at or near a critical angle of the sample; a transmitting crystal in communication with the electromagnetic radiation source and the sample, the transmitting crystal having a high refractive index adapted to reflect the electromagnetic radiation internally; a reflector adapted to introduce the electromagnetic radiation to the sample at or near an angle of incidence near the critical angle between the transmitting crystal and sample; and a detector for detecting the electromagnetic radiation from the sample. Also, provided herein are methods, systems, and kits incorporating the peri-critical reflectance spectroscopy apparatus.

Abstract: A radiation imaging apparatus includes a substrate, at least one imaging element, a scintillator, a first heat peelable adhesive member which fixes the substrate to the imaging element, and a second heat peelable adhesive member which fixes the imaging element to the scintillator. An adhesive strength of the first heat peelable member is decreased by heat. A temperature of the first heat peelable adhesive member at which the adhesive strength is decreased is substantially equal to a temperature at which second heat peelable adhesive member fixes the imaging element to the scintillator. A heat transfer quantity per unit time of the substrate is different from that of the scintillator.