Abstract: An integrated focal plane provides two co-aligned, overlapping pixel arrays in two formats, one with large pixels and low pixel count, the other with small pixels and high pixel count. Typically, the large pixels are 10 to 100 times larger in area than the small pixels. The dual arrays are disposed in a single detector substrate flip-chip bonded to a single readout circuit. They are sensitive to two infrared colors, one shorter and one longer wavelength band. The dual array focal plane concurrently provides two distinct pixel instantaneous fields of view within the same overall field of view as well as simultaneous fast and slow frame rates. The dual frame rates allow for combined fast sensing with sensitive imaging. Differing spatial and temporal data enables enhanced image processing for improved clutter rejection and detection performance. Differing gains combined with the dual frame rates provide an extended dynamic range.

Abstract: An infrared photo-detector with multiple discrete regions of a first absorber material. These regions may have geometric shapes with sloped sidewalls. The detector also may include a second absorber region comprising a second absorber material that absorbs light of a shorter wavelength than the light absorbed by the multiple discrete absorber regions of the first absorber material. The geometric shapes may extend only through the first absorber material. Alternatively, the geometric shapes may extend partially into the second absorber region. The detector has a metal reflector coupled to the multiple discrete absorber regions. The detector also has a substrate containing the discrete absorber regions and the second absorber region. The substrate can further include geometric shaped features etched into the substrate, with those features formed on the side of the substrate opposite the side containing the discrete absorber regions and the second absorber region.

Abstract: Temperature sensor devices and corresponding methods are provided. A temperature sensor may include a first layer being essentially non-conductive in a temperature range and a second layer having a varying resistance in the temperature range.

Abstract: A calibration method includes generating, by a digital-to-analog converter of a chip, a first predetermined voltage and a second predetermined voltage and outputting the same to an analog-to-digital-converter of the chip to generate a first digital code difference; determining a variation parameter according to the first digital code difference and one of a plurality of second digital code differences stored in a look up table of a memory unit of the chip; driving, by an external testing system, the digital-to-analog converter to generate the first predetermined voltage and the second predetermined voltage and output the same to the analog-to-digital-converter to generate a target code difference; and multiplying the second digital code differences with the variation parameter to calibrate a gain of the analog-to-digital converter according to the target code difference.

Abstract: A graphene transistor optical detector based on a metamaterial structure and an application thereof. The optical detector includes a substrate, a gate metal layer, a gate medium layer, a graphene layer, a source and drain metal layer successively arranged from bottom to top, wherein a local region of at least the source and drain metal layer has a periodic micro/nanostructure, the periodic micro/nanostructure being matched with the gate metal layer and the gate medium layer to form a metamaterial structure having a complete absorption characteristic. By changing the refractive index, thickness or the like of material for the periodic micro/nanostructure and the gate medium layer, a light absorption frequency band of the metamaterial structure can be regulated. The optical detector provided by the present invention has higher flexibility and narrow-band response, and can work under visible light to infrared even longer wavebands by selecting different metamaterial structures.

Abstract: Imaging systems may include an image sensor and a microelectromechanical systems array. The microelectromechanical systems array may be mounted over the image sensor. The system may include an infrared lens that focuses infrared light onto a first surface of the microelectromechanical systems array and a visible light source that illuminates an opposing second surface of the microelectromechanical systems array. The image sensor may capture images of the opposing second surface of the microelectromechanical systems array. The system may include processing circuitry that generates infrared images of a scene using the captured images of the microelectromechanical systems array. Microelectromechanical systems elements in the microelectromechanical systems array may change position or shape in response to infrared light that is absorbed by the microelectromechanical systems elements. Each microelectromechanical systems element may include infrared absorbing material on a metal layer.

Abstract: A Ge-on-Si photodetector constructed without doping or contacting Germanium by metal is described. Despite the simplified fabrication process, the device has responsivity of 1.24 A/W, corresponding to 99.2% quantum efficiency. Dark current is 40 nA at ?4 V reverse bias. 3-dB bandwidth is 30 GHz.

Abstract: A portable thermal imaging system includes a portable housing configured to be carried by a user, a bolometer sensor assembly supported by the housing and including an array of thermal sensor elements and at least one plasmonic lens, a memory including program instructions, and a processor operably connected to the memory and to the sensor, and configured to execute the program instructions to obtain signals from each of a selected set of thermal sensor elements of the array of thermal sensor elements, assign each of the obtained signals with a respective color data associated with a temperature of a sensed object, and render the color data.

Abstract: The present invention relates to a mixed multi-spectrum light-sensing pixel group, a light-sensing device, and a light-sensing system. The mixed multi-spectrum light-sensing pixel group includes at least one chemical coating light-sensing pixel and at least one semiconductor light-sensing pixel. In the present invention, the chemical coating light-sensing pixel and the semiconductor light-sensing pixel are combined to generate a mixed multi-spectrum light-sensing pixel, numerous color signals and other spectral signals may be simultaneously obtained, energy of incident photons can be maximally utilized, and the theoretical upper limit of photoelectric conversion efficiency is achieved or approximately achieved; colors may be completely reconstructed, and meanwhile images of other spectrums including an ultraviolet image, a near-infrared image, and a far-infrared image are obtained.

Abstract: A method of driving LED chips of same power but different rated voltages and currents includes the following steps: set a predetermined power; provide a LED chip which has a rated power accordant to the predetermined power; measure the LED chip to obtain a working current thereof while the LED chip is operated; provides a driving current to the LED chip, and maintain the driving current the same as the working current.

Abstract: An infrared camera architecture includes, for an embodiment, an infrared detector, a substrate, a plurality of electrical components coupled to the substrate, and a pedestal made of a thermally conductive material and having a leg coupled to the substrate. The infrared detector is supported by and thermally coupled to the pedestal, with the pedestal thermally isolating the infrared detector from the plurality of electrical components.

Abstract: A photodetector 1A comprises a multilayer structure 3 having a first layer 4 constituted by first metal or first semiconductor, a semiconductor structure layer 5 mounted on the first layer 4 and adapted to excite an electron by plasmon resonance, and a second layer 6 mounted on the semiconductor structure layer 5 and constituted by second metal or second semiconductor.

Abstract: A time-domain waveform of a terahertz wave is measured by a method based on time-domain spectroscopy by using an optical delay unit to adjust an optical path length along which excitation light propagates thereby adjusting a difference between a time at which the excitation light arrives at a generating unit configured to generate the terahertz wave and a time at which the excitation light arrives at a detection unit configured to detect the terahertz wave. The optical delay unit is driven according to a first speed pattern to acquire a first time-domain waveform. The optical delay unit is then driven according to a second speed pattern different from the first speed pattern to acquire a second time-domain waveform. The first time-domain waveform and the second time-domain waveform are averaged.

Abstract: An imaging device may include an image sensor having an array of image pixels. The array of image pixels may include one or more infrared pixels that are configured to detect infrared light. The infrared pixels may include reflective structures for increasing quantum efficiency in the infrared spectral range. The reflective structures may include first and second parallel structures formed on opposing sides of a photodiode in an infrared pixel. The reflective structures may be partially transparent to infrared light and non-transparent to visible light. The reflective structures may form an optical cavity so that infrared light that enters an infrared pixel is reflected back and forth between the reflective structures until it is absorbed by the photodiode in the infrared pixel. Reflective structures may also be formed between infrared filters and color filters to suppress optical crosstalk between infrared pixels and color pixels.

Abstract: Methods and structures of barrier detectors are described. The structure may include an absorber that is at least partially reticulated. The at least partially reticulated absorber may also include an integrated electricity conductivity structure. The structure may include at least two contact regions isolated from one another. The structure may further include a barrier layer disposed between the absorber and at least two contact regions.

Abstract: The present technology provides a color-sensing device that includes an electrically-conductive substrate and a bulk heterojunction (BHJ) polymer layer formed on the substrate. The color-sensing device is configured to detect a first color of two colors and produce a first electrical signal that includes a first current response indicating detection of the first color. The color-sensing device is further configured to detect a second color of the two colors and produce a second electrical signal that includes a second current response indicating detection of the second color.

Abstract: An optoelectronic device for detecting electromagnetic radiation and including: a body of semiconductor material delimited by a main surface and including a first region and a second region that form a junction; and a recess formed in the body, which extends from the main surface and is delimited at least by a first wall, the first wall being arranged transverse to the main surface. The junction faces the first wall.

Abstract: A proximity and light sensing device including a radiation emitter for proximity sensing positioned on a substrate. The device further includes a radiation detector positioned on the substrate, the radiation detector configured to detect radiation from the emitter. An ambient light detector is also positioned on the substrate and around the radiation emitter so as to form a border around the radiation emitter and detect off-axis ambient light rays.

Abstract: An infrared sensor includes a heat sensing element, the heat sensing element includes a first electrode, a second electrode and a dielectric film formed between the first electrode and the second electrode. The heat sensing element senses heat based on a change of a resistance value. The dielectric film includes at least Bi and Fe.

Abstract: A semiconductor sensor includes a substrate and an absorber. The substrate includes at least one reflective component. The absorber is spaced apart from the at least one reflective component by a distance. The absorber defines a plurality of openings each having a maximum width that is less than or equal to the distance.

Abstract: An imaging system includes a first silicon photomultiplier (SiPM) comprising an array of microcells. Each microcell is an avalanche photodiode (APD) operated in a Geiger mode, a first area of the first SiPM, comprising at least one of the microcells, is electrically isolated from all other microcells, and a signal from the first area, resulting from at least one photon pulse, is used to determine a gain of the first SiPM.

Abstract: An infrared sensor device includes at least one sensor element formed in a semiconductor substrate, an SOI wafer that defines a gap below and around the sensor element, and a suspension device that is configured to suspend the sensor element in the SOI wafer. The sensor element is substantially arranged below the suspension device, thereby achieving a high sensitivity, low thermal capacity, low thermal coupling to the substrate and a high image refresh rate.

Abstract: A terahertz wave detecting device includes: a substrate; and a plurality of detection elements that is arranged above the substrate, wherein the detection element includes an absorbing section that absorbs a terahertz wave to generate heat, and a converting section that converts the heat generated in the absorbing section into an electric signal, wherein the absorbing section includes a dielectric layer, a first metal layer that is provided on a surface of the dielectric layer, and a second metal layer that is provided on the other surface of the dielectric layer, and wherein the plurality of detection elements is arranged so that the terahertz wave that is diffracted between the adjacent absorbing sections is incident onto the dielectric layer.

Abstract: A terahertz detection device comprises at least one terahertz antenna, a detection microbridge suspended above a substrate comprising a resistive load coupled to the antenna and a resistive bolometric element coupled to the resistive load, a bias circuit for biasing the bolometric element. The device further comprises a skimming microbridge suspended above the substrate, comprising a resistive bolometric element, and substantially identical to the detection microbridge, a reflective metal layer opposite to the skimming microbridge to obtain a destructive interference at the level of the skimming microbridge for a terahertz wavelength, a bias circuit to electrically bias the bolometric element of the skimming microbridge and a read circuit for measuring a difference between the electric signals of the microbridges.

Abstract: A manufacturing method of a sensing integrated circuit including the following acts. A plurality of transistors are formed. At least one dielectric layer is formed on or above the transistors. A plurality of connecting structures are formed in the dielectric layer. The connecting structures are respectively and electrically connected to the transistors. A plurality of separated conductive wells are respectively formed in electrical contact with the connecting structures.

Abstract: An imaging device according to an embodiment includes: a semiconductor substrate; a reference pixel with a first concave portion disposed in a first portion of a surface of the semiconductor substrate; and one or more infrared detection pixels each configured to detect light with a second concave portion disposed in a second portion of the surface of the semiconductor substrate, the reference pixel being directly connected to the semiconductor substrate at a position where the first concave portion is not present, and including a first thermoelectric conversion unit configured to convert heat to an electric signal, the first thermoelectric conversion unit being disposed in the first concave portion and including a first thermoelectric conversion element, each infrared detection pixel including a second thermoelectric conversion unit being disposed in the second concave portion and including a second thermoelectric conversion element.

Abstract: Sub-arrays such as tiles or chips having pixel elements arranged on a routing layer or carrier to form a larger array. Through-chip vias or the like to the backside of the chip are used for connecting with the pixel elements. Edge features of the tiles may provide for physical alignment, mechanical attachment and chip-to-chip communication. Edge damage tolerance with minimal loss of function may be achieved by moving unit cell circuitry and the electrically active portions of a pixel element away from the tile edge(s) while leaving the optically active portion closer to the edge(s) if minor damage will not cause a complete failure of the pixel. The pixel elements may be thermal emitter elements for IR image projectors, thermal detector elements for microbolometers, LED-based emitters, or quantum photon detectors such as those found in visible, infrared and ultraviolet FPAs (focal plane arrays), and the like. Various architectures are disclosed.

Abstract: A thermal detector includes a substrate, a support member, a spacer member, a thermal detection element, a detection circuit and a wiring part. The spacer member supports the support member over the substrate with a cavity part being formed therebetween. The thermal detection element is supported on the support member. The wiring part connects between the detection circuit and the thermal detection element, and has first through third conductive layer parts and a plurality of plugs. The first conductive layer part includes at least one layer disposed in the substrate. The second conductive layer part includes at least one layer disposed in the spacer member. The third conductive layer part includes at least one layer supported by the support member. The plugs respectively connect adjacent layers of the first conductive layer part, the second conductive layer part and the third conductive layer part, in a thickness direction of the substrate.

Abstract: An electro-optical device may include a first substrate, a second substrate, a photo-curable seal member between the first substrate and the second substrate, a first light-shielding layer between the first substrate and the photo-curable seal member, and a second light-shielding layer between the first substrate and the first light-shielding layer. The first substrate may include a pixel area in which pixels are aligned, and a seal region around the pixel area and in which the photo-curable seal member is provided. Within the seal region, the second light-shielding layer may be larger in an outer shape or pattern than the shape or pattern of first light-shielding layer. The pixel area may include an interconnect layer made of the same layer as the one of the light-shielding layers, and the interconnect layer may be narrower than one of the light-shielding layers.

Abstract: [Object] To provide a terahertz emission microscope being capable of improving a detection accuracy of a terahertz electromagnetic wave, a photoconductive element and a lens used therefor, and a method of producing a device. [Solving Means] A photoconductive element includes a base material, electrodes and a film material. The base material has an incident surface on which a terahertz electromagnetic wave is incident, the terahertz electromagnetic wave generated by irradiating a device to be observed with a pulse laser generated from a light source. The electrodes are formed on the base material and detect the terahertz electromagnetic wave incident on the incident surface of the base material. The film material is formed on the incident surface of the base material, transmits the terahertz electromagnetic wave and reflects the pulse laser.

Abstract: A multilayer electronic imaging module and sensor system incorporating a micro-lens layer for imaging and collimating a received image from a field of regard, a photocathode layer for detecting photons from the micro-lens layer and generating an electron output, a micro-channel plate layer for receiving the output electrons emitted from the photocathode in response to the photon input and amplifying same and stacked readout circuitry for processing the electron output of the micro-channel plate. The sensor system of the invention may be provided in the form of a Cassegrain telescope assembly and includes electromagnetic imaging and scanning means and beam-splitting means for directed predetermined ranges of the received image to one or more photo-detector elements which may be in the form of the micro-channel imaging module of the invention.

Abstract: A multilayer electronic imaging module and sensor system incorporating a micro-lens layer for imaging and collimating a received image from a field of regard, a photocathode layer for detecting photons from the micro-lens layer and generating an electron output, a micro-channel plate layer for receiving the output electrons emitted from the photocathode in response to the photon input and amplifying same and stacked readout circuitry for processing the electron output of the micro-channel plate. The sensor system of the invention may be provided in the form of a Cassegrain telescope assembly and includes electromagnetic imaging and scanning means and beam-splitting means for directed predetermined ranges of the received image to one or more photo-detector elements which may be in the form of the micro-channel imaging module of the invention.

Abstract: A method of forming a photo sensor includes the following steps. A substrate is provided, and a first electrode is formed on the substrate. A first silicon-rich dielectric layer is formed on the first electrode for sensing an infrared ray, wherein the first silicon-rich dielectric layer comprises a silicon-rich oxide layer, a silicon-rich nitride layer, or a silicon-rich oxynitride layer. A second silicon-rich dielectric layer is formed on the first silicon-rich dielectric layer for sensing visible light beams, wherein the second silicon-rich dielectric layer comprises a silicon-rich oxide layer, a silicon-rich nitride layer, or a silicon-rich oxynitride layer. A second electrode is formed on the second silicon-rich dielectric layer.

Abstract: A system and method of reducing undesirable image artifacts such as image tear and image smearing are described. The system can include a series of pixels and enhanced sensitivity circuits. The circuit can be configured so as to operate in an enhanced sensitivity mode having a combination of sample and hold circuits and binning functions, the combination acting so as to reduce the undesirable imaging artifacts.

Abstract: Electronic devices may include time-of-flight (ToF) image pixels. Each ToF pixel may include a photodiode, a first capacitor coupled to the photodiode via a first transfer gate, a second capacitor coupled to the photodiode via a second transfer gate, and a third capacitor coupled to the photodiode via a third transfer gate. The first transfer gate may be turned on for a given duration to store a first charge in the first capacitor. The second transfer gate may be turned on for the given duration to store a second charge in the second capacitor. The third transfer gate may be turned on for a duration that is longer than the given duration to store a third charge in the third capacitor. Depth information may be computed based on the first, second, and third stored charges and a corresponding pixel constant.

Abstract: The visible and near-infrared radiation detector includes a near-infrared photosensitive element, a readout circuit for reading the near-infrared photosensitive element, four visible photosensitive elements, one of which being placed facing the near-infrared photosensitive element, and three interference filters to define a pixel quadruplet. A first pixel, including the near-infrared photosensitive element and one of the visible photosensitive elements, has no filter. The three other pixels, respectively including the three other visible photosensitive elements, are respectively provided with filters associated with the three primary colors. Each interference filter includes an alternation of metal layers and of dielectric layers.

Abstract: The invention relates to an optical module, comprising a semiconductor element having a surface that is sensitive to electromagnetic radiation and an objective for projecting electromagnetic radiation onto the sensitive surface of the semiconductor element (image sensor or camera chip, in particular CCD or CMOS). The objective preferably comprises at least one lens and one lens retainer. In the optical module, an optical element having two sub-areas is arranged either in the space between the objective and the sensitive surface of the semiconductor element or between individual lenses of the objective in the entire cross-section of the beam path. All electromagnetic radiation that reaches the sensitive surface of the semiconductor element passes through the optical element. A first distance range (e.g. near range) is imaged in a first area of the sensitive surface of the semiconductor element in a focused manner by a first sub-area of the optical element, and a second distance range (e.g.

Abstract: A semiconductor device comprising an infrared sensor assembly for sensing infrared radiation is described. The infrared sensor assembly comprises a single sensing element for sensing infrared radiation and an aperture means comprising a plurality of apertures. The sensing element and the aperture means thereby are positioned with respect to each other so that the plurality of apertures are positioned in front of the same, single sensing element so that the plurality of apertures limit the field of view of the same, single sensing element for impinging radiation.

Abstract: An infrared imaging element of an embodiment includes: a first pixel portion including a first cell portion including a first infrared ray detecting portion detecting a first infrared ray and a second infrared ray with a wavelength different from a wavelength of the first infrared ray, and first supporting legs that support the first cell portion, the first supporting legs including a first and second wiring lines that convey an electrical signals obtained by the first infrared ray detecting portion; and a second pixel portion including a second cell portion including a second infrared ray detecting portion detecting the second infrared ray, and second supporting legs that support the second cell portion, the second supporting legs including a third and fourth wiring lines that convey an electrical signal obtained by the second infrared ray detecting portion.

Abstract: Silicon photomultiplier and readout method A silicon photomultiplier device is provided which comprises a first electrode arranged to provide a bias voltage to the device, a second electrode arranged as a ground electrode for the device, and a third electrode arranged to provide an output signal from the device using the second electrode as the output signal ground.

Abstract: The present invention relates to a single photon detector (SPD) at telecom wavelength of 1.55 ?m based on InGaAs/InP avalanche photodiode (APD). In order to operate the SPD at a low after-pulse noise, a DC bias voltage lower than the breakdown voltage is applied to an InGaAs/InP APD. A bipolar rectangular gating signal is superimposed with the DC bias voltage and applied to the APD so as to exceed the breakdown voltage during the gate-on time of each period of the gate signal. The use of the bipolar rectangular gating signal enabling us to operate the APD well below the breakdown voltage during the gate-off time, thereby make the release of the trapped charge carriers faster and then reduces the after-pulse noise. As a result, it permits to increase the repetition rate of the SPD.

Abstract: The architecture, design and fabrication of array of suspended micro-elements with individual seals are described. Read out integrated circuit is integrated monolithically with the suspended elements for low parasitics and high signal to noise ratio detection of changes of their electrical resistance. Array of individually sealed, suspended micro-elements is combined with signal processing chip that contains nonvolatile memory with sensitivity calibration of all elements and interpolation between non-functional elements. When the micro-elements are infrared light absorbers, image analysis and recognition is embedded in the processing chip to form the infrared imaging solution for infrared cameras.

Abstract: Disclosed is a semiconductor device, comprising a driver that causes first through third infrared LEDs to emit light sequentially at prescribed times; an infrared light sensor that receives infrared light that is emitted by the first through the third infrared LEDs and reflected by a reflecting object, and generates photoelectric currents at levels corresponding to the intensity of the received infrared light; an amplifier that generates first through third infrared light information, on the basis of the photoelectric current that is generated by the infrared light sensor, and which denote the intensity of the infrared light; an A/D converter; and a linear/logarithmic converter apparatus. It is thus possible to sense the movement of the reflecting object on the basis of the first through the third infrared light information.

Abstract: A charge injection circuit is used to control injection of an electronic charge to be added to a photon-induced charge generated by a detector of a direct integration circuit. The electronic charge can be injected directly to the detector or through a parallel path to the detector.

Abstract: A thermal detector includes a fixed part, a thermal detection device, a supporting member, a cavity and a connection portion. The supporting member has a first plane and a second plane opposing to the first plane. The cavity is formed between the first plane and the fixed part. The connection portion connects the supporting member with the fixed part. The connection portion includes a curvature plane between the supporting member and the fixed part and the curvature plane facing the cavity.

Abstract: A thermal absorption structure of a radiation thermal detector element may include an optically transitioning material configured such that optical conductivity of the thermal absorption structure is temperature sensitive and such that the detector element absorbs radiation less efficiently as its temperature increases, thus reducing its ultimate maximum temperature.

Abstract: An infrared sensor array with interconnection type, comprises a substrate, a plurality of circuit units, and a plurality of infrared sensing modules. The substrate defines several sensing segments. Each sensing segment has a base portion, a connecting portion, and a testing portion. The connecting portion is arranged between the base portion and the testing portion. The circuit units are respectively formed on the sensing segments. Each circuit unit has a base circuit, a connecting circuit, and a testing circuit. The connecting circuit electrically connects to the base circuit and the testing circuit. Each base circuit is formed on each base portion, each connecting circuit is formed on each connecting portion, and each testing circuit is formed on each testing portion. The infrared sensing modules are respectively disposed on the base portions and electrically connected to the base circuits.

Abstract: A spectrometer system for providing information about a target with terahertz radiation. The system may receive incident radiation from the target through fore optics, a slit aperture, secondary optics and a dispersive element which images a slit on an array of terahertz sensitive detectors. The detectors may include uncooled sensors. Each sensor may be connected to its own micro antenna. The array of detectors may be situated proximate to the dispersive element so that radiation from the element may be dispersed according to wavelength to the respective detectors optimally sensitive to the various respective wavelengths. Detector signals indicating the impingement of terahertz radiation may provide information for identifying a material of the target.

Abstract: A unit pixel of a depth sensor includes a light-receiver configured to perform photoelectric conversion of an incident light to output an electrical signal and at least two sensors adjacent to the light-receiver to receive the electrical signal from the light-receiver such that a line connecting the sensors forms an angle greater than zero degrees with respect to a first line, the first line passing through a center of the light-receiver in a horizontal direction.

Abstract: A terahertz system can be configured for producing and coherently detecting terahertz radiation. The system can comprise a laser light source and two THz antennas, a first of which is used as a transmission antenna and a second of which is used as a receiver antenna, which are each optically coupled to the laser light source by an optical fiber and can be activated by light from this laser light source, wherein the THz antennas each have a semiconductor chip to which antenna conductors have been contact-connected and which comprises at least one photosensitive active layer with a band edge wavelength which is longer than a wavelength of the laser light source and at least one layer, adjoining the active layer, with a band edge wavelength which is shorter than the wavelength of the laser light source, wherein the band edge wavelength of the active layer of at least one of the THz antennas is at least 200 nm longer than the wavelength of the laser light source.