Abstract: Examples of an electromagnetic field detecting element according to the present invention includes a substrate, a pair of electrodes, three insulation layers disposed on the substrate and between the electrodes. The three insulation layers are designed to have two or three different dielectric breakdown strength. At least two ballistic current paths are formed between the electrodes. With this structure, it is possible to perform at a room temperature a highly efficient electromagnetic field detection utilizing Aharonov-Bohm effect or Aharonov-Casher effect.

Abstract: A backside illuminated imaging sensor includes a semiconductor layer and an infrared detecting layer. The semiconductor layer has a front surface and a back surface. An imaging pixel includes a photodiode region formed within the semiconductor layer. The infrared detecting layer is disposed above the front surface of the semiconductor layer to receive infrared light that propagates through the imaging sensor from the back surface of the semiconductor layer.

Abstract: A device for analyzing a sample using radiation in the terahertz frequency range is provided. The device comprises a transmitter (3) comprising a THz signal generator (5, 6, 7; 51) for generating an electromagnetic THz signal, the THz signal generator comprising a nonlinear transmission line (7; 52). The device further comprises a surface plasmon polariton generating unit (8) adapted to convert the THz signal into a surface plasmon polariton. The transmitter (3) and the surface plamon polariton generating unit (8) are either integrated on one common substrate or on two separate substrates.

Abstract: The present invention pertains to a proximity sensor packaging structure, which comprises a substrate, two first electrically conductive layers and a plurality of second electrically conductive layers that are disposed on the substrate. The substrate has first and second grooves that are respectively defined by a bottom surface and an interior sidewall. Each electrically conductive layer extends from a bottom surface of the first groove, along the interior sidewall of the first groove and in an opposite direction relative to the other first electrically conductive layer, to an exterior sidewall of the substrate. The second electrically conductive layers include first and second electrically conductive portions. The first electrically conductive portion is disposed on a central region of the bottom surface of the second groove. The second electrically conductive portion extends from the bottom surface of the second groove, along the interior sidewall thereof, to the exterior sidewall of the substrate.

Abstract: A diode sensor matrix including a multitude of diodes is configured to detect, in a first measuring cycle, a first sensor value at a first diode or at diodes of a first group of diodes while operating the first diode and/or the diodes of the first group in the flow direction and operating the diodes, which share an anode or cathode or terminal with the first diode or with any of the diodes of the first group, in the reverse direction, and to detect, in a second measuring cycle, a second sensor value at a second diode among the diodes which share an anode or cathode terminal with the first diode or with any of the diodes of the first group, while operating the second diode in the flow direction and operating the first diode or a diode from the first group in the reverse direction.

Abstract: Provided are a waveguide with which strain and defect caused by a manufacturing process or the like or caused in a semiconductor in an initial stage or during operation are suppressed so that improvement and stabilization of characteristics are expected, and a method of manufacturing the waveguide. A waveguide includes a first conductor layer and a second conductor layer that are composed of a negative dielectric constant medium having a negative real part of dielectric constant with respect to an electromagnetic wave in a waveguide mode, and a core layer that is in contact with and placed between the first conductor layer and the second conductor layer, and includes a semiconductor portion. The core layer including the semiconductor portion has a particular depressed and projected structure extending in an in-plane direction.

Abstract: Disclosed is a semiconductor device, comprising a driver that causes first through third infrared LEDs to emit light sequentially at prescribed times; an infrared light sensor that receives infrared light that is emitted by the first through the third infrared LEDs and reflected by a reflecting object, and generates photoelectric currents at levels corresponding to the intensity of the received infrared light; an amplifier that generates first through third infrared light information, on the basis of the photoelectric current that is generated by the infrared light sensor, and which denote the intensity of the infrared light; an A/D converter; and a linear/logarithmic converter apparatus. It is thus possible to sense the movement of the reflecting object on the basis of the first through the third infrared light information.

Abstract: An infrared imaging system including a substrate, a plurality of hexagonal shaped micro-bolometer pixels combined to define a focal plane array. Each pixel is electrically connected to the substrate with a pair of opposing isolation legs. One end of the isolation leg is attached to the pixel's periphery while the other is fixed to that substrate so that the focal plane array and a plane containing the substrate have a parallel, spaced-apart relationship. In this manner, the isolation legs provides an electrical communication path from each pixel to the substrate as each pixel undergoes an internal change in resistance due to absorption of infrared energy. At the same time, the legs separate the pixels from the substrate so that there is no heat transfer between the pixel and the substrate due to direct contact. The hexagonal shape arrangement also allows for a staggered arrangement of adjacent rows in the array, thereby increasing the fill factor for the focal plane array of the device.

Abstract: A dual function injection type array readout device includes at least two sensor groups and a dual function injection type array readout circuit. Each sensor group has two sensors of different functions, and each sensor generates a sense current according to a corresponding sensed target. The dual function injection type array readout circuit includes at least two dual function readout modules, each having two readout units, each electrically coupled to a respective sensor of a corresponding sensor group. Each readout unit includes a current-to-voltage converter having an integration capacitor, and a sample-and-hold device electrically coupled to the current-to-voltage converter. A switch unit is electrically coupled to the integration capacitors of the readout units.

Abstract: An infrared light detector with an infrared light sensitivity thereof further improved. According to the infrared light detector, an isolated region of a first electronic layer is switched between a “disconnected status” and a “connected status”. Under the connected status, saturation of an electrostatic charge quantity of the isolated region in the disconnected status is eliminated, and consequently, saturation of a variation amount of an electrical conductivity of a second electronic layer is eliminated. Therefore, the infrared light sensitivity is further improved by time integration of the variation amount of the electrical conductivity of the second electronic layer.

Abstract: A microelectronic device for electromagnetic radiation measurement including a bolometer and an integrator including an integration capacitor, to output, during an integration time, a first signal with variable amplitude and frequency according to the current emitted by the detector, in a form of a series of pulses, and a controller controlling the first signal, to deliver a second signal. The controller includes: a counting device to count each pulse of the first signal detected during an integration time and to indicate an end of counting when a predetermined number N of pulses is reached, and when the end-of-integration time is reached and a predetermined number N of pulses has been counted or deducted by the counter, to emit a second amplitude signal, depending on or equal to the amplitude of the first signal.

Abstract: The invention relates to a light mixer for generating terahertz radiation, comprising a photodetector (PHD) coupled to an antenna (AT) for terahertz radiation, characterized in that the photodetector comprises a layer of photoconductive material capable of absorbing optical radiation, said layer having a thickness that is less than the absorption length of said radiation by the photoconductive material and being contained between an at least partially transparent so-called upper electrode and a reflective so-called lower electrode, said lower and upper electrodes comprising a resonant cavity for said optical radiation. The invention further relates to a terahertz radiation source comprising such a light mixer and to two laser radiation sources arranged to stack two laser radiation beams on the upper electrode of the photodetector. The invention also relates to the use of such a light mixer for generating terahertz radiation via light mixing.

Abstract: Semiconductor structures for optoelectronic sensors with an infrared (IR) blocking filter and methods for using such sensors with post-detection compensation for IR content that passes through the IR blocking filter are provided herein.

Abstract: Provided is a photoconductive element which solves a problem inherent in an element for generating/detecting a terahertz wave by photoexcitation that terahertz wave generation efficiency is limited by distortions and defects of a low temperature grown semiconductor. The photoconductive element includes: a semiconductor substrate; a semiconductor low temperature growth layer; and a semiconductor layer, which is positioned between the semiconductor low temperature growth layer and the semiconductor substrate and is thinner than the semiconductor low temperature growth layer, in which the semiconductor low temperature growth layer includes a semiconductor which lattice-matches with the semiconductor layer and does not lattice-match with the semiconductor substrate.

Abstract: An optical sensor includes a visible light sensor includes a visible light sensing transistor and an infrared light sensor includes an infrared light sensing transistor, wherein the visible light sensing transistor receives a first driving voltage through a first driving voltage line, the infrared light sensing transistor receives a second driving voltage through a second driving voltage line, and the visible light sensing transistor and the infrared light sensing transistor receive a reference voltage through a reference voltage line.

Abstract: According to one embodiment, a solid state imaging device includes an infrared detection pixel configured to change an output potential by receiving infrared light, a non-sensitive pixel, a row select line, and a differential amplifier. An amount of change in an output potential when the non-sensitive pixel receives infrared light is smaller than an amount of change in an output potential when the infrared detection pixel receives the infrared light. The row select line is configured to apply a drive potential to both the infrared detection pixel and the non-sensitive pixel. The differential amplifier includes one input terminal to which an output potential of the infrared detection pixel is inputted and another input terminal to which an output potential of the non-sensitive pixel is inputted.

Abstract: The invention provides an imager readout architecture utilizing analog-to-digital converters (ADC), the architecture comprising a band-limited sigma delta modulator (SDM) ADC; and a serpentine readout, which can be configured to allow the band-limited SDM to multiplex between multiple columns by avoiding discontinuities at the edges of a row. SDM ADC image reconstruction artifacts are minimized using a modified serpentine read out methodology, the methodology comprising using primary and redundant slices with the serpentine read out in opposite directions and averaging the slices. Advantageously, the invention can be used to develop a read out integrated circuit (ROIC) for strained layer superlattice imagers (SLS) using sigma delta modulator (SDM) based analog to digital converters (SDM ADC).

Abstract: An infrared positioning apparatus comprises a plurality of infrared diodes, a plurality of amplifying units, a plurality of converting units and a positioning unit. The plurality of infrared diodes is configured to detect at least one infrared signal. The plurality of amplifying units are configured to amplify the at least one infrared signal for obtaining at least one amplified signal. The plurality of converting units are configured to convert the at least one amplified signal for obtaining at least one strength value of the at least one amplified signal. The positioning unit is configured to obtain the emitting direction of the at least one infrared signal in accordance with the at least one strength value of the at least one amplified signal.

Abstract: A plasmonic detector is described which can resonantly enhance the performance of infrared detectors. More specifically, the disclosure is directed to enhancing the quantum efficiency of semiconductor infrared detectors by increasing coupling to the incident radiation field as a result of resonant coupling to surface plasma waves supported by the metal/semiconductor interface, without impacting the dark current of the device, resulting in an improved detectivity over the surface plasma wave spectral bandwidth.

Abstract: The present invention discloses an X-ray imaging device comprising an X-ray absorber that comprises a plurality of semiconductor layers. The plurality of semiconductor layers comprise a substrate having a backside; and at least one absorption layer adapted to absorb at least one X-ray photon impinging on the at least one absorption layer that is adapted to correspondingly generate in response to the at least one impinging X-ray photon at least one electron-hole pair; and a readout unit, wherein the readout unit is operatively coupled to the X-ray absorber such to enable readout of the at least one electron-hole pair. Additional and alternative embodiments are described and claimed.

Abstract: An image sensor includes near-infrared cut filters formed over an array of photosensitive elements in a predetermined pattern. The near-infrared cut filters may be formed over one half of a photosensitive element in a split pixel arrangement, over one half the photosensitive elements in the array, over every other photosensitive element in the array, and/or in a checkerboard pattern.

Abstract: A detector for detecting electromagnetic radiation includes a substrate and at least one microstructure including a radiation-sensitive membrane extending substantially opposite and away from the substrate. The membrane is mechanically attached to at least two longilinear, collinear retention elements, at least one of which is mechanically connected to the substrate by an intermediate post. The membrane is in electrical continuity with the substrate. At least two collinear legs are attached to each other at the level of their ends which are attached to the membrane by a mechanical connector which is substantially co-planar with the legs and membrane. The other end of at least one of the legs is integral with a rigid cross piece which is substantially co-planar with the legs and extends substantially at right angles relative to the main dimension of the legs. The cross piece is integral with the post which is integral with the substrate.

Abstract: Optically transitioning pixel-level filtering using a multi-level structure that includes an isolated optically transitioning filter element that is suspended over a corresponding radiation detector element in a one-to-one relationship to provide, for example, one or more features such as spectral detection and/or selective radiation immunity.

Abstract: The present invention is directed to a system and method for advanced chemical sensing utilizing a Terahertz receiver instrument having a compact tunable heterodyne mixer to detect chemical species in a noisy background of pollutants, and provide fast acquisition and analysis of the 0.1-2 THz spectrum. The present invention directly couples a microbolometer with a THz quantum cascade laser (QCL) that is utilized as the local oscillator (LO) source for the receiver.

Abstract: An infrared sensor includes a MOSFET sensor, and a current source MOSFET which is connected to the MOSFET sensor in series and constitutes a constant current source for driving the MOSFET sensor with a constant current, wherein a terminal between the MOSFET sensor and the current source MOSFET constitutes a sensor output terminal, the MOSFET sensor is disposed on a heat-insulated structure, the current source MOSFET is disposed outside the heat-insulated structure, and the MOSFET sensor and the current source MOSFET are constituted by a same conductivity type MOSFET and operate in a subthreshold region.

Abstract: An ultraviolet sensor has an ultraviolet detection diode having a depletion region 18 formed in an Si layer 16 on an insulating layer 14, an interlayer insulating film 20 formed on the ultraviolet detection diode, and a wiring 24 formed on the interlayer insulating film 20. An incident angle ? (°) of an incident light entering into the depletion region 18 and a film thickness Tsi (nm) of the depletion region 18 satisfy the following formula (1), which is also shown in FIG. 14.

Abstract: There is provided a high-sensitivity organic semiconductor radiation/light sensor and a radiation/light detector which can detect rays in real time. In the high-sensitivity organic semiconductor radiation/light sensor, a signal amplification wire 2 is embedded in an organic semiconductor 1. Carriers created by passage of radiation or light are avalanche-amplified by a high electric field generated near the signal amplification wire 2 by means of applying a high voltage to the signal amplification wire 2, thus dramatically improving detection efficiency of rays. Hence, even rays exhibiting low energy loss capability can be detected in real time with high sensitivity.

Abstract: It is possible to quickly and readily determine the location of an object. A solid-state imaging element according to an embodiment includes: at least two infrared detectors formed on a semiconductor substrate; an electric interconnect configured to connect the at least two infrared detectors in series; and a comparator unit configured to compare an intermediate voltage of the electric interconnect connecting the infrared detectors in series, with a predetermined reference voltage.

Abstract: Photodetection devices and methods are described. The photodetection devices comprise semiconductor tapered pillars.

Abstract: The invention relates to an optical module, comprising a semiconductor element having a surface that is sensitive to electromagnetic radiation and an objective for projecting electromagnetic radiation onto the sensitive surface of the semiconductor element (image sensor or camera chip, in particular CCD or CMOS). The objective preferably comprises at least one lens and one lens retainer. In the optical module, an optical element having two sub-areas is arranged either in the space between the objective and the sensitive surface of the semiconductor element or between individual lenses of the objective in the entire cross-section of the beam path. All electromagnetic radiation that reaches the sensitive surface of the semiconductor element passes through the optical element. A first distance range (e.g. near range) is imaged in a first area of the sensitive surface of the semiconductor element in a focused manner by a first sub-area of the optical element, and a second distance range (e.g.

Abstract: A portable device for detecting explosives and other target materials using SWIR spectroscopic imaging, including hyperspectral imaging. The device may comprise a lens, a tunable filter, and a detector. The device may use solar radiation, or may comprise an illumination source such as a laser, to illuminate at target material and thereby produce interacted photons. The device may utilize multi-conjugate liquid crystal filter technology to filter interacted photons. The disclosure also provides for a method for using the portable device comprising illuminating a target material to produce interacted photons. The interacted photons are used to form a SWIR spectroscopic image, which may be a hyperspectral image. This image is analyzed to thereby identify the target material. This analysis may comprise comparing at least one spectrum or image representative of the target material to a reference spectrum or image. This comparison may be accomplished using a chemometric technique.

Abstract: An infrared sensor and infrared imaging system, wherein said infrared sensor comprises: a first film structure, a second film structure, a gap between said first film structure and said second film structure. Reference light is incident from one of said first film structure and said second film structure. When said gap distance changes, the intensity of transmitted reference light changes, and the intensity of reflected reference light changes. When infrared light is incident, at least one of the said first and second film structures absorbs infrared light and the temperature changes, causing said gap distance to change. By detecting the intensity of said transmitted reference light or reflected reference light, the incident infrared light can be measured.

Abstract: A radiation sensor includes an integrated circuit radiation sensor chip (1A) including first (7) and second (8) thermopile junctions connected in series to form a thermopile (7,8) within a dielectric stack (3). The first thermopile junction (7) is insulated from a substrate (2) of the chip. A resistive heater (6) in the dielectric stack for heating the first thermopile junction is coupled to a calibration circuit (67) for calibrating responsivity of the thermopile (7,8). The calibration circuit causes a current flow in the heater and multiplies the current by a resulting voltage across the heater to determine power dissipation. A resulting thermoelectric voltage (Vout) of the thermopile (7,8) is divided by the power to provide the responsivity of the sensor.

Abstract: A detector unit (301) for detecting electromagnetic radiation (106), the detector unit (301) comprising a conversion material (332) adapted for converting impinging electromagnetic radiation (106) into electric charge carriers, a charge collection electrode (331) adapted for collecting the converted electric charge carriers, a shielding electrode (334, 335) adapted to form a capacitance with the charge collection electrode (331), and an evaluation circuit (312 to 315) electrically coupled with the charge collection electrode (331) and adapted for evaluating the electromagnetic radiation (106) based on the collected electric charge carriers.

Abstract: An oven may include a housing having a cooking receptacle configured to hold content therein, a heating element carried by the housing and configured to heat the content, and a proximity detector carried by the housing in the cooking receptacle and configured to detect surface movement of the content. The proximity detector may include at least one SPAD.

Abstract: A terahertz generation system that emits pulsed THz radiation and incorporates a rapidly oscillating, high voltage bias across electrodes insulated from a photoconductive material. The system includes an ultrafast optical pulse source configured to generate an optical pulse having a duration between about ten picoseconds and ten femtoseconds, the pulse further having a repetition rate of about one megahertz or higher. The system further includes a photoconductor configured to receive the optical pulse from the ultrafast optical pulse source and to generate a terahertz frequency pulse, the photoconductor having insulated electrodes. The system still further includes a radio frequency generator configured to apply an electric field to the photoconductor via the insulated electrodes.

Abstract: According to certain embodiments, an apparatus comprises a first readout integrated circuit (ROIC), a second ROIC, and a dual band detector array. The first ROIC comprises first unit cells. The second ROIC is disposed outwardly from the first ROIC and comprises a second unit cells. Electrically conductive vias are disposed through the second ROIC and at least into the first ROIC. The detector array is disposed outwardly from the second ROIC. The detector array is configured to detect high dynamic range infrared light and comprises detector pixels. Each detector pixel is configured to generate a current in response to detecting light and send the current to a via. A via is configured to send the signal to a second unit cell and a first unit cell.

Abstract: A method of manufacturing a semiconductor device is disclosed. The method comprises: applying a sensing layer with variation in a secondary attribute according to heat, on a handle wafer; patterning the sensing layer, thus forming a cavity; forming a sensing part pattern having a beam structure in the cavity; forming a light-absorbing layer for converting energy of incident photons into heat, along the sensing part pattern; turning the entire structure over, removing the handle wafer, and thus exposing a rear portion of the sensing part pattern; and forming an additional light-absorbing layer on a rear portion of the light-absorbing layer formed on the sensing part pattern, thereby forming a sensing structure part having a beam structure.

Abstract: The system is comprised of at least one pair of light sources (1; 2; 3) that emit pulsed electromagnetic radiation in the near-infrared zone; at least one pair of light sources (1; 2; 3) that emit radiation in the near-ultraviolet zone; at least one photodetector (4) with the absorption band located in the near-infrared zone, for detecting the pulsed radiation transmitted and reflected on the biological element, on the basis of the pulsed radiation emitted by the pair of light sources that emit the radiation in the near-infrared; at least one photodetector (5) with the absorption band located in the near-ultraviolet zone, for detecting the pulsed radiation transmitted and reflected on the biological element, on the basis of the pulsed radiation emitted by the pair of light sources (1; 2; 3) that emit the radiation in the near-ultraviolet zone; a control unit (8(c)) that interprets the pulsed radiation transmitted and reflected on the biological element; and a processing unit (8(d)) that determines if it is a

Abstract: A midwave infrared lead salt photodetector manufactured by a process comprising the step of employing molecular beam epitaxy (MBE) to grow a heterostructure photoconductive detector with a wide-gap surface layer that creates a surface channel for minority carriers.

Abstract: An infrared detecting device is provided that is capable of improving device characteristics thereof by narrowing the width of each beam portion. The infrared detecting device has an infrared detection portion having a thermoelectric transducing part formed over a semiconductor substrate via an air gap interposed therebetween, and the beam portions which are formed over the semiconductor substrate via the air gap interposed therebetween, support the infrared detection portion and electrically connect between the infrared detection portion and the semiconductor substrate, wherein each of the beam portions has an insulating material film and a conductive material layer exposed from the insulating material film to a side surface of each beam portion.

Abstract: A THz radiation detector comprising a plurality of antenna arms separated from a suspended platform by an isolating thermal air gap. The detector functions to concentrate THz radiation energy into the smaller suspended MEMS platform (e.g., membrane) upon which a thermal sensor element is located. The THz photon energy is converted into electrical energy by means of a pixilated antenna using capacitive coupling in order to couple this focused energy across the thermally isolated air gap and onto the suspended membrane on which the thermal sensor is located.

Abstract: A device for detecting electromagnetic radiation, including pixels each detecting a radiation and providing an electric current representative of the detected radiation, a column to which the pixels are connected, and transmitting the electric currents provided by the pixels, and an electrical module, to which the transmission column is connected, processing the electric currents provided by the pixels. Each pixel includes a detection circuit including a bolometric detector connected in series to a voltage polarization device of the bolometric detector for adjusting the electric current supplied to the processing module by the transmission column.

Abstract: A near-field terahertz wave detector comprises a semiconductor chip (12) whose longitudinal electrical resistance along its surface changes due to a near-field wave of a terahertz wave (1), an insulating film (18) which covers the surface of the semiconductor chip, and a conductive film (20) able to shield the terahertz wave by covering the surface of the insulating film. The conductive film (20) has an aperture (21) whose maximum size is one digit or more smaller than the wavelength of the terahertz wave. Further, a planar conductive probe (14) is provided between the conductive film (20) and the semiconductor chip (12). The conductive probe (14) is insulated from the conductive film (20) by the insulating film (18), and a tip (14a) of the conductive probe (14) is located inside the aperture (21).

Abstract: Embodiments of the present invention provide systems, devices and methods for detecting both ambient light and proximity to an object. This detection is performed by a double-layered photodiode array and corresponding circuitry such that ambient light and proximity detection are enabled by a plurality of integrated photodiodes. In various embodiments of the invention, ambient light is sensed using a first set of photodiodes and a second set of photodiodes such that a spectral response is created that is approximately equal to the visible light spectrum. Proximity detection is realized using an integrated photodiode, positioned below the first and second sets of photodiodes, that detects infrared light and generates a response thereto.

Abstract: Systems, articles, and methods are provided related to nanowire-based detectors, which can be used for light detection in, for example, single-photon detectors. In one aspect, a variety of detectors are provided, for example one including an electrically superconductive nanowire or nanowires constructed and arranged to interact with photons to produce a detectable signal. In another aspect, fabrication methods are provided, including techniques to precisely reproduce patterns in subsequently formed layers of material using a relatively small number of fabrication steps. By precisely reproducing patterns in multiple material layers, one can form electrically insulating materials and electrically conductive materials in shapes such that incoming photons are redirected toward a nearby electrically superconductive materials (e.g., electrically superconductive nanowire(s)). For example, one or more resonance structures (e.g.

Abstract: A THz frequency range antenna is provided which comprises: a semiconductor film (3) having a surface adapted to exhibit surface plasmons in the THz frequency range. The surface of the semiconductor film (3) is structured with an antenna structure (4) arranged to support localized surface plasmon resonances in the THz frequency range.

Abstract: A resistive material for a bolometer, a bolometer for an infrared detector using the material, and a method of manufacturing the bolometer are provided. In the resistive material, at least one element selected from the group consisting of nitrogen (N), oxygen (O) and germanium (Ge) is included in antimony (Sb). The resistive material has superior properties such as high temperature coefficient of resistance (TCR), low resistivity, a low noise constant, and is easily formed in a thin film structure by sputtering typically used in a complementary metal-oxide semiconductor (CMOS) process, so that it can be used as a resistor for the bolometer for an uncooled infrared detector, and thus provide the infrared detector with superior temperature precision.

Abstract: Disclosed herein is a laser navigation module. The laser navigation module includes a light source emitting laser light. An IR window allows the laser light emitted by the light source to pass therethrough and be reflected thereon, and prevents the entry of visible light. A housing is equipped with the IR window and includes a transparent or semi-transparent part. An illuminator is provided in the housing to emit light to the outside of the housing. The laser navigation module further includes an opaque part or a blocking layer for selective blocking, thus enabling light to be emitted to a desired area of the housing, therefore making it convenient to use even in a dark place.

Abstract: In conventional membrane infrared (IR) sensors, little to no attention has been paid toward transmissivity of IR near metal traces. Here, because the substrate of an integrated circuit carrying the sensor is used as a visible light filter, reflection of IR radiation back into the substrate can affect the operation and reliability of the IR sensor. As a result, an arrangement is provided that reduces the area occupied by metal lines by reducing the pitch and compacting the routing so as to reduce the effects from the reflection of IR radiation by metal traces.