Abstract: A semiconductor device capable of acquiring high-precision range information in a short time is provided. Alternatively, a semiconductor device capable of acquiring the range information and image information concurrently in a short time is provided. The accuracy of range information is increased by performing infrared light irradiation more than once to acquire a detection signal and making infrared light irradiation periods identical and extremely short. By detecting light reflected from substantially the same points of an object by adjacent photodiodes, the accuracy of range information can be maintained even when the object is a moving object. By overlapping a photodiode absorbing visible light and transmitting infrared light with a photodiode absorbing infrared light, range information and image information can be acquired concurrently.

Abstract: A 3D wafer-integration uncooled infrared (IR) microbolometer focal plane array (FPA) sensor includes a first die with an FPA of uncooled IR microbolometers, a second die signal-processing layer. The dies are vertically aligned, stacked with 3D wafer bonding, and interconnected. Interconnection include vertical electrical interconnects. Separate optimized manufacturing processes are used for die, so that additional processing costs of the FPA die are leveraged and 3D integration is completed at wafer level, minimizing total device cost and maximizing die count per wafer.

Abstract: The present invention relates to a single photon detector (SPD) at telecom wavelength of 1.55 ?m based on InGaAs/InP avalanche photodiode (APD). In order to operate the SPD at a low after-pulse noise, a DC bias voltage lower than the breakdown voltage is applied to an InGaAs/InP APD. A bipolar rectangular gating signal is superimposed with the DC bias voltage and applied to the APD so as to exceed the breakdown voltage during the gate-on time of each period of the gate signal. The use of the bipolar rectangular gating signal enabling us to operate the APD well below the breakdown voltage during the gate-off time, thereby make the release of the trapped charge carriers faster and then reduces the after-pulse noise. As a result, it permits to increase the repetition rate of the SPD.

Abstract: The present invention provides an infrared sensor and an infrared sensor module having reduced noise, improved detection precision, and reduced manufacture cost. The infrared sensor includes a first substrate transmitting infrared light including at least one reduced-pressure and sealed cavity, at least one infrared sensing unit provided on the side of the first substrate, and at least one infrared sensing unit generating an output change. The infrared sensor includes a second substrate stacked on the first substrate with a recess, a reflection face capable of reflecting the infrared light, and at least one arithmetic circuit for amplifying or integrating an output, arranged in such a manner that the reflection face is sandwiched between the at least one sensing unit and the least one arithmetic circuit.

Abstract: The detector of visible and near-infrared radiation comprises a near-infrared photosensitive element, a readout circuit for reading the near-infrared photosensitive element, four visible photosensitive elements, one of which being placed facing the near-infrared photosensitive element, and four pigmented resin filters to define a pixel quadruplet. A first pixel, including the near-infrared photosensitive element and one of the visible photosensitive elements, is provided with a resin filter opaque to visible radiation. The three other pixels, respectively including the three other visible photosensitive elements, are respectively provided with filters associated with the three primary colors.

Abstract: In conventional membrane infrared (IR) sensors, little to no attention has been paid toward transmissivity of IR near metal traces. Here, because the substrate of an integrated circuit carrying the sensor is used as a visible light filter, reflection of IR radiation back into the substrate can affect the operation and reliability of the IR sensor. As a result, an arrangement is provided that reduces the area occupied by metal lines by reducing the pitch and compacting the routing so as to reduce the effects from the reflection of IR radiation by metal traces.

Abstract: The visible and near-infrared radiation detector includes a near-infrared photosensitive element, a readout circuit for reading the near-infrared photosensitive element, four visible photosensitive elements, one of which being placed facing the near-infrared photosensitive element, and three interference filters to define a pixel quadruplet. A first pixel, including the near-infrared photosensitive element and one of the visible photosensitive elements, has no filter. The three other pixels, respectively including the three other visible photosensitive elements, are respectively provided with filters associated with the three primary colors. Each interference filter includes an alternation of metal layers and of dielectric layers.

Abstract: A thermal absorption structure of a radiation thermal detector element may include an optically transitioning material configured such that optical conductivity of the thermal absorption structure is temperature sensitive and such that the detector element absorbs radiation less efficiently as its temperature increases, thus reducing its ultimate maximum temperature.

Abstract: A THz wave detector including a thermal isolation structure in which a supporting unit containing electrode wirings connected to a readout circuit formed in an substrate supports a temperature detecting unit connected to the electrode wirings so that one face of said temperature detecting unit and said substrate are opposed to each other with a predetermined gap, wherein a reflective film reflecting THz waves is formed on the substrate so as to face the temperature detecting unit, an absorbing film absorbing the THz waves is formed on the temperature detecting unit, the reflective film and the temperature detecting unit form an optical resonant structure, the distance between the reflective film and the temperature detecting unit is set to 8 to 14 ?m, and the sheet resistance of the absorbing film is set to 100 to 200 ?/square.

Abstract: The thermoelectric detector comprises an infrared absorber pixel structure supported by two electrically connected beams made of a thermoelectric material. One end of the thermoelectric beam connects to the infrared absorber pixel structure; the other end connects to the substrate. The detector comprises a microlens for collecting and focusing infrared radiation on the detector. Infrared radiation is incident on the infrared absorber pixel structure results in a temperature gradient along the length of the thermoelectric legs, and generating an electrical voltage proportional to the gradient. A low noise SIGe BiCMOS readout integrated circuit is coupled to the detector to provide a background limited detector having improved detectivity.

Abstract: An organic photodetector detects infrared radiation, particularly radiation within the spectral region of over 1100 nm, the so-called imager region. Contrary to the currently known photodetectors, such as the Bolometer, II-VI semiconductor, and quantum well detectors, the photodetector contains semiconducting nano-particles for shifting the range of detection, requires no technical and cost-intensive effort in the production thereof, and may be constructed of flexible substrates by simple printing methods.

Abstract: Various embodiments of an optical proximity sensor having a lead frame and no overlying metal shield are disclosed. In one embodiment, a light emitter and a light detector are mounted on a lead frame comprising a plurality of discrete electrically conductive elements having upper and lower surfaces, at least some of the elements not being electrically connected to one another. An integrated circuit is die-attached to an underside of the lead frame. An optically-transmissive infrared pass compound is molded over the light detector and the light emitter and portions of the lead frame. Next, an optically non-transmissive infrared cut compound is molded over the optically-transmissive infrared pass compound to provide an optical proximity sensor having no metal shield but exhibiting very low crosstalk characteristics.

Abstract: A low-power 4×4-pixel THz camera with responsivity greater than 2.5 MV/W and sub-10 pW/?Hz NEP at 0.25 THz is integrated in 130 nm silicon without using either high-resistivity substrates or silicon lenses. Imaging results with a fully integrated radiating CMOS power source demonstrate the first entirely silicon-based THz imager.

Abstract: In an embodiment, the invention provides a proximity sensor including a transmitter die, a receiver die, an ASIC die, a lead frame, wire bonds, a first transparent encapsulant, a second transparent encapsulant, and an opaque encapsulant. The transmitter die, the receiver die and the ASIC die are attached to portions of the lead frame. Wire bonds electrically connect the transmitter die, the receiver die, the ASIC die, and the lead frame. The first transparent encapsulant covers the receiver die, the ASIC die, the wire bonds, and a portion of the lead frame. The second transparent encapsulant covers the transmitter die, the wire bonds, and a portion of the lead frame. The opaque encapsulant covers portions of the first and second encapsulants and a portion of the lead frame.

Abstract: An image sensor comprises a photoelectric conversion element receiving light to accumulate photocharges, and a wavelength conversion layer formed above the photoelectric conversion element to convert light within a first wavelength band into light within a second wavelength band shorter than the first wavelength band and supply the converted light to the photoelectric conversion element.

Abstract: In a device for the detection of thermal radiation and a method for production of such a device, a stack is formed with a detector support having a detector element for converting the thermal radiation into an electric signal, a circuit support with a read-out circuit for reading out the electrical signal and a cover to shield the detector element. The detector support and the cover are so arranged that a first stack cavity is formed between the detector element and the cover and a second stack cavity is formed between detector support and the circuit support. The first stack cavity and/or the second stack cavity is evacuated and hermetically sealed. In the manufacturing operation, functionalized silicon-substrates are stacked upon one another, firmly bonded together and subsequently sub-divided. Preferably, the detector elements are pyro-electric detector elements. The device finds application in motion detectors, presence reporters and thermal-image cameras.

Abstract: A broadband imager, which is able to image both IR and visible light, is disclosed. In one embodiment, an IR sensitive region of an IR pixel underlies the R, G, B sensitive regions of R, G, and B visible pixels. Therefore, the IR pixel receives IR light through a same surface area of the photosensor through which the R, G, and B pixels receive visible light. However, the IR light generates electron-hole pairs deeper below the common surface area shared by the RGB and IR pixels, than visible light. The photosensor also has a charge accumulation region for accumulating charges generated in the IR sensitive region and an electrode above the charge accumulation region for providing a voltage to accumulate the charges generated in the IR pixel.

Abstract: A dual function injection type array readout device includes at least two sensor groups and a dual function injection type array readout circuit. Each sensor group has two sensors of different functions, and each sensor generates a sense current according to a corresponding sensed target. The dual function injection type array readout circuit includes at least two dual function readout modules, each having two readout units, each electrically coupled to a respective sensor of a corresponding sensor group. Each readout unit includes a current-to-voltage converter having an integration capacitor, and a sample-and-hold device electrically coupled to the current-to-voltage converter. A switch unit is electrically coupled to the integration capacitors of the readout units.

Abstract: A bolometer including: at least one electromechanical microsystem or nanosystem, the microsystem or nanosystem including a support and a mobile mass hung from beams above the support, the mobile mass forming an absorber of optical flux; actuation electrodes configured to set the mobile mass in vibration and arranged laterally relative to the mobile mass; and detection electrodes to detect variation in vibration frequency of the mobile mass arranged laterally relative to the mobile mass.

Abstract: A radiation sensor device including an integrated circuit chip including a radiation sensor on a surface of the integrated chip, one or more electrical connections configured to connect between an active surface of the integrated circuit chip and a lead frame, a cap attached to said integrated circuit chip spaced from and covering said radiation sensor, the cap having a transparent portion defining a primary lens transparent to the radiation to be sensed, a secondary lens disposed in a recess proximate and spaced from said primary lens transparent to the radiation to be sensed, and an air gap between said primary lens and said secondary lens.

Abstract: A terahertz continuous wave system in accordance with the inventive concept may include a terahertz wave generator generating a terahertz continuous wave; a non-destructive detector measuring a change of the terahertz continuous wave by emitting the generated terahertz continuous wave to a sample and controlling a focal point of the emitted terahertz continuous wave while two-dimensionally moving the sample at predetermined intervals; and a three-dimensional image processor obtaining a three-dimensional image using two-dimensional images corresponding to the measured terahertz continuous wave.

Abstract: An apparatus is provided for performing photothermal measurements on a object. The apparatus, which may be provided as a handpiece, houses optical components including a laser, an infrared detector, a dichroic beamsplitter, and focusing and beam directing optics for the delivery of a laser beam to, and the collection of photothermal radiation from, a measured object. Some of the optical components may be provided on an optical bench that is directly attached to a thermally conductive tip portion for the passive heat sinking of internal optical components. The apparatus may further include a sampling optical element and a photodetector for the detection of luminescence, and a camera for obtaining an image of the object during a diagnostic procedure. The apparatus may be employed for the scanning of a tooth to determine an oral health status of the tooth.

Abstract: This invention provides devices and methods for broad-band amplification of non linear properties. This invention provides devices comprising optically non linear material that is in contact with a slit array. The slit array causes enhancement of the electromagnetic field within the non linear materials. The enhancement of the electromagnetic field within the optically non linear material results in an amplified non linear response exhibited by the optically non linear materials. This invention provides detectors and imaging systems based on devices and methods of this invention.

Abstract: A photodetector is disclosed for the detection of infrared light with a long cutoff wavelength in the range of about 4.5-10 microns. The photodetector, which can be formed on a semiconductor substrate as an nBn device, has a light absorbing region which includes InAsSb light-absorbing layers and tensile-strained layers interspersed between the InAsSb light-absorbing layers. The tensile-strained layers can be formed from GaAs, InAs, InGaAs or a combination of these III-V compound semiconductor materials. A barrier layer in the photodetector can be formed from AlAsSb or AlGaAsSb; and a contact layer in the photodetector can be formed from InAs, GaSb or InAsSb. The photodetector is useful as an individual device, or to form a focal plane array.

Abstract: The invention utilizes the changes in physical properties of materials during a solid-solid phase transition in order to enhance the sensitivity of cantilever IR detectors. The substantial changes in properties during insulator-to-metal transitions (IMTs) of some materials are useful for controlling purposes according to the invention. A cantilever arrangement is provided with a cantilever being coated with an insulator-to-metal transitions (IMTs) material. Bending of the cantilever is achieved when the temperature of the (IMTs) material is within its phase transition temperature range. A Focal Plane Array (FPA) for detecting Infrared (IR) radiation including the cantilever arrangement of the invention is also proposed.

Abstract: A radiation detector includes material for absorbing incident radiation, and for providing a response to heating caused by the absorption of photons from the incident radiation. The radiation detector may include multiple pixels, each with one or more layers of absorbing material. The absorbing material may include black (microstructured) silicon, which has the advantage of being a good absorber of radiation in the short wave infrared (SWIR) wavelengths (as well as ultraviolet (UV) wavelengths and visible light wavelengths). The radiation detector may include multiple pixels, each separately responding to radiation incident on that pixel, and each including black silicon (as well as possibly other absorptive materials). The pixels of the detector may each have cantilevered attachment to a frame of the detector, with differences in coefficient of thermal expansion of materials of the pixels causing deflection of parts of the pixels due to heating from absorption of radiation.

Abstract: The invention relates to a method for controlling the resistance of a bolometer in a bolometer matrix of a sensor, said sensor comprising a circuit for reading said matrix which is capable of addressing said bolometer. According to the invention, the method comprises a step (46) of adjusting the recurrence of addressing the bolometer using the read circuit.

Abstract: A thermal infrared solid-state imaging device includes a horizontal scanning circuit for scanning a pixel area horizontally to read an infrared image, and vertical scanning circuits provided at both ends of the pixel area. The vertical scanning circuits drive a drive line by applying a driving voltage at both ends of the drive line (in two-end driving). Further a bias voltage is applied at the end of the pixel area to a bias line connected to differential integrating circuits.

Abstract: A post-supported bolometer pixel and a process for manufacturing it comprising the steps of depositing a sacrificial layer over a substrate with readout integrated circuit pads that connect to the integrated circuit; forming vias through the sacrificial layer to the metal pads connecting to the readout integrated circuit; filling the vias with metal and polishing said metal to the surface of the sacrificial layer; forming microbolometer pixel layers over the filled vias and sacrificial layer; and removing the sacrificial layer to leave a post-supported pixel.

Abstract: An event detection and classification system uses a new type of optical sensing component, a Position Sensing Detector Focal Plane Array (PSD-FPA). The PSD-FPA provides for high-speed operation that allows for accurate sensing of fast artifacts that are unique to weapons fire and enables precise location of optical phenomenon. The system detects and classifies events, particularly weapons fire, and rejects false alarms. An optical lens sub-system focuses light onto a PSD-FPA, which senses the photons and generates electrical signals associated with individual elements of the PSD-FPA. These signals are processed to identify and classify weapons-related or other events. Background subtraction, variable gain, time-intensity and time-location correlation, digital filtering, Fourier analysis, and wavelet analysis are all used to successfully classify the events while rejecting false alarms.

Abstract: The invention relates to a light pulse sensor (100) with direct injection feedback which comprises a matrix of photosensors, each photosensor comprising a transducer (1) and an integrator (2) comprising an MOSFET injection transistor (21) mounted as a common gate, a feedback amplifier, an integration capacitor (22). The feedback amplifier is a cascode inverting differential amplifier (20?) placed between the input of the injection transistor (21) and the gate of this transistor, and, for each photosensor, a demultiplexing circuit (4) is inserted between the transducer (1) and the integrator (2), capable of connecting successively the transducer (1) on the input of the inverting amplifier (20?) then on the input of the injection transistor (21).

Abstract: According to example embodiments, an infrared thermal detector includes a substrate, a detector spaced apart from the substrate, and a thermal legal configured to transmit a signal from the detector to the substrate. The detector is configured to absorb incident infrared light via localized surface Plasmon resonance, and the detector is configured to change a resistance value according to a temperature change caused by the absorbed infrared light.

Abstract: A wide field of view monocentric lens system for an infrared aerial reconnaissance camera includes front and rear lens shell elements and a core lens element, with the number of front and rear shell lens elements depending on the IR band of interest (LWIR, MWIR or SWIR). Infrared radiation entering the monocentric lens passes sequentially through the front shell lens element(s), the core lens element, and the rear shell lens element(s) and is focused onto a curved focal surface. The front shell lens element(s) and the rear shell lens element(s) are made of material having a relatively higher refractive index or a relatively higher optical dispersion, or both, in the band of interest, as compared to the core lens element.

Abstract: Provided is a terahertz wave generator that improves efficiency of generating a terahertz wave. The terahertz wave generator includes a generating layer for generating the terahertz wave, a waveguide layer for propagating excitation light entering the generating layer and a terahertz wave generated by the excitation light entering the generating layer, and a first confinement layer for confining in the waveguide layer the excitation light propagating in the waveguide layer and the terahertz wave propagating in the waveguide layer. The generating layer, the waveguide layer, and the first confinement layer are laminated in the stated order.

Abstract: 3D sensors, systems, and associated methods are provided. In one aspect, for example, a monolithic 3D sensor for detecting infrared and visible light can include a semiconductor substrate having a device surface, at least one visible light photodiode formed at the device surface and at least one 3D photodiode formed at the device surface in proximity to the at least one visible light photodiode. The device can further include a quantum efficiency enhanced infrared light region functionally coupled to the at least one 3D photodiode and positioned to interact with electromagnetic radiation. In one aspect, the quantum efficiency enhanced infrared light region is a textured region located at the device surface.

Abstract: There is provided a visible-region light measuring instrument including: a first photodiode and a second photodiode. At least one of the first photodiode and the second photodiode comprises plural photodiodes, when the first photodiode comprises a first plural photodiodes, the visible-region light measuring instrument has first fuses that control connections between the first plural photodiodes and at least one of the first node and the first power supply node. When the second photodiode comprises a second plural photodiodes, the visible-region light measuring instrument has second fuses that control connections between the second plural photodiodes and at least one of the first node and the second power supply node.

Abstract: The infrared detecting element has a base plate; an insulating film that is provided on the base plate and has a recessed portion surrounding a hollow space; a supporting section that is held by a beam, one end of the beam being fixed to the insulating film, and is located in an area that opposes the hollow space; and an infrared detecting section that is provided on the supporting section and detects infrared rays, in which the recessed portion is covered with a water repellent film that includes polysilicon, and the beam and the supporting section include silicon nitride or silicon carbonitride.

Abstract: A hybrid solid state imaging focal plane array (FPA) for night vision systems achieves a high dynamic range from deeply overcast starlight to full daylight by interleaving non-avalanche photodiode (NAP) pixels with APD pixels in a single imaging plane controlled by a common readout circuit. The APD pixels provide high performance at low light levels, while the NAP pixels provide unsaturated images in full daylight. The APD pixels can be Discrete. In low light the readout circuit can disable the NAP pixels and interpolate the NAP pixels using the APD signals. In daylight the readout circuit can do the opposite. The FPA can be digitally fused with sensors in a separate plane such as InGaAs APD's that detect wavelengths outside of the visible band. The NAP pixels can outnumber the APD pixels, for example by three-to-one. The APD's can be silicon for visible light, or InGaAs for SWIR light.

Abstract: An electrical calibrated radiometer includes a base, a suspension unit extending from the base, and a first heat measuring unit and a second heat measuring unit formed in the base. By applying a known voltage to the first heat measuring unit, the first heat measuring unit could serve as a thermal background for the second heat measuring unit, and an absolute temperature of a heat source could be determined with high precision from output voltages of the second heat measuring unit.

Abstract: The infrared photodetector includes a contact layer formed over a semiconductor substrate 10, a quantum dot stack 24 formed on the contact layer 12 and including intermediate layers 22 and quantum dots 20 which are alternately stacked, and a contact layer 26 formed on the quantum dot stack 24. One of the plurality of intermediate layers, which is in contact with the contact layer, has an n-type impurity doped region 16 formed on a side nearer the interface with the contact layer 12.

Abstract: A vertically stacked thermopile and an IR sensor using said stacked thermopiles are provided. The vertically stacked thermopile may include multiple thermocouples stacked vertically on one another. The thermocouples may be connected in series, parallel, or a combination of series and parallel. One or more vertically stacked thermopiles may be included in an IR sensor and the thermopiles may be connected in series, parallel, or a combination of series and parallel.

Abstract: An infrared sensor and infrared imaging system, wherein said infrared sensor comprises: a first film structure, a second film structure, a gap between said first film structure and said second film structure. Reference light is incident from one of said first film structure and said second film structure. When said gap distance changes, the intensity of transmitted reference light changes, and the intensity of reflected reference light changes. When infrared light is incident, at least one of the said first and second film structures absorbs infrared light and the temperature changes, causing said gap distance to change. By detecting the intensity of said transmitted reference light or reflected reference light, the incident infrared light can be measured. An infrared sensor and infrared imaging system also include a temperature compensation mechanism, and are insensitive to the fluctuations of the environmental temperature.

Abstract: A THz radiation detector comprising a plurality of antenna arms separated from a suspended platform by an isolating thermal air gap. The detector functions to concentrate THz radiation energy into the smaller suspended MEMS platform (e.g., membrane) upon which a thermal sensor element is located. The THz photon energy is converted into electrical energy by means of a pixilated antenna using capacitive coupling in order to couple this focused energy across the thermally isolated air gap and onto the suspended membrane on which the thermal sensor is located.

Abstract: An active infrared induction instrument powered by a dry battery capable of reducing power consumption through the adjustment of the emitter pulse width. The infrared emitted LED emits infrared signals, which, after being reflected by an object, are received by the infrared photodiode. The infrared signals received the infrared signals received by the infrared photodiode then enter an integrated circuit chip through a comparator. The pulse widths of the infrared emission pulse signals are dynamically adjusted after the width of the pulse series is received by the discrimination chip, thus reducing the emission power consumption to save energy.

Abstract: A thermopile sensor for detection of infrared radiation in a measurement wavelength range having a sensor substrate in which a cavity is formed, a diaphragm formed on the sensor substrate above the cavity, at least one thermopile structure formed in, on, or below the diaphragm, having at least one thermopile pair of mutually contacted thermopile legs, where the two thermopile legs are made of doped semiconductor materials having different Seebeck coefficients, and at least one insulating intermediate layer formed between the thermopile legs. A layer system having at least the two thermopile legs and at least the insulating intermediate layer is formed above the lower cavity and has multibeam interference for IR radiation in the measurement wavelength range, absorbing a portion of the IR radiation and at least partially reducing the reflection.

Abstract: A modular radiation integrator assembly including a radiation source that emits radiation, a first integrator module including a first input port and a first output port, an adjust tube configured to partially receive the first integrator module and engage the radiation source in a manner such that the radiation emitted by the radiation source travels to and enters the first input port, and a second integrator module including a second input port and second output port, the second integrator module couplable to the first integrator module outside the adjust tube in a manner such that the radiation exits the first output port and enters the second input port.

Abstract: An apparatus for analyzing, identifying or imaging an target including first and second laser beams coupled to a pair of photoconductive switches to produce CW signals in one or more bands in a range of frequencies greater than 100 GHz focused on, and transmitted through or reflected from the target; and a detector for acquiring spectral information from signals received from the target and using a multi-spectral heterodyne process to generate an electrical signal representative of some characteristics of the target. The lasers are tuned to different frequencies and a phase modulator in the path of one laser beam allows the constructive or destructive interference of the signals on the detector as the laser beams are swept in frequency to be adjusted to achieve greater resolution in one or more selected frequency bands.

Abstract: In an electrical device controlled by infrared signals from a remote control, a power saving device has an infrared detection module and a processor. The infrared detection module includes an infrared sensor configured to monitor the output of the remote control device, and a shield which is at least substantially impervious to infrared radiation, and which at least partially shields the infrared sensor from infrared radiation which does not emanate from the remote control device. The processor is coupled to the infrared detection module, and supplies power to the electrical device at least substantially only when the electrical device is in active use by a nearby user, and based at least in part upon input from the infrared sensor.

Abstract: Semiconductor structures for optoelectronic sensors with an infrared (IR) blocking filter and methods for using such sensors with post-detection compensation for IR content that passes through the IR blocking filter are provided herein.

Abstract: A diffraction grating coupled infrared photodetector for providing high performance detection of infrared radiation is described. The photodetector includes a three-dimensional diffractive resonant optical cavity formed by a diffraction grating that resonates over a range of infrared radiation wavelengths. By placing a limited number of p/n junctions throughout the photodetector, the photodetector thermal noise is reduced due to the reduction in junction area. By retaining signal response and reducing the noise, the sensitivity increases at a given operating temperature when compared to traditional photovoltaic and photoconductive infrared photodetectors up to the background limit. The photodetector device design can be used with a number of semiconductor material systems, can form one- and two-dimensional focal plane arrays, and can readily be tuned for operation in the long wavelength infrared and the very long wavelength infrared where sensitivity and noise improvements are most significant.