Abstract: Various embodiments of an optical proximity sensor and corresponding circuits and methods for measuring small AC signal currents arising from the detection of pulsed AC light signals emitted by a light emitter and reflected from an object to detected in the presence of larger ambient light DC current signals are disclosed. Circuits and corresponding methods are described that improve the dynamic range, sensitivity and detection range of an optical proximity sensor by cancelling the contributions of DC current signals arising from ambient light signals that otherwise would dominate the detected small AC signal currents. The DC signal cancellation occurs in a differential amplifier circuit before small AC signal currents are provided to an analog-to-digital converter. The circuits and methods may be implemented using conventional CMOS design and manufacturing techniques and processes.

Abstract: An infrared detector 1 having a bolometer element 11 and a reference element 21 is provided with a bolometer thin film 22 supported on a surface of a substrate 10while spaced apart from the surface of the substrate 10, a metal film 23 for heat dissipation formed on a surface of the bolometer thin film 22 via an insulating film 31, wherein the surface of the bolometer thin film 22 faces the substrate 10, and a plurality of metal columns 25 connected thermally with the metal film 23 for heat dissipation and the substrate 10. Since heat generated from a photodetecting portion 22aby infrared rays is efficiently dissipated to the substrate 10 via the insulating film 31, the metal film 23 for heat dissipation, the metal columns 25, and a metal film 24 for heat dissipation on the side of the substrate, only temperature variation caused by variation in use environment can be measured accurately, and downsizing can be achieved while reducing the influence of temperature variation in use environment.

Abstract: An infrared detector system is described which includes a detector diode array 3 and a non volatile memory 1. The non volatile memory 1 can use CMOS Silicon Fuse technology which can be polysilicon devices that are programmed using voltage-current-time profiles suitable for the silicon process technology, such that when applied will cause the polysilicon element to heat up rapidly and melt. This results in the fuse element going open circuit, just like blowing a known fuse. The fuse can act as a logic element that has a one time, user programmable and permanent logic state. An array of such memory cells is can be mapped to a sub pixel diode detector array.

Abstract: Motions or gestures can provide input to an electronic device by capturing images of a feature used to provide the motions or gestures, then analyzing the images. Conventional cameras have a limited field of view, creating a “dead zone” near the device that is outside the field of view. Various embodiments utilize an array of detectors positioned behind a display screen that are configured to operate as a large, low resolution camera. The array can resolve objects within a distance of the device sufficient to cover at least a portion of the dead zone. In some embodiments the device can include one or more infrared (IR) emitters to emit IR light that can be reflected by an object in the dead zone and detected by the detectors. The use of multiple emitters at different locations enables at least some depth information to be determined from the array images.

Abstract: A strain-balanced photodetector is provided for detecting infrared light at an extended cutoff wavelength in the range of 4.5 ?m or more. An InAsSb absorber layer has an Sb content is grown in a lattice-mismatched condition to a GaSb substrate, and a plurality of GaAs strain-compensating layers are interspersed within the absorber layer to balance the strain of the absorber layer due to the lattice mismatch. The strain-compensation layers allow the absorber to achieve a thickness exhibiting sufficient absorption efficiency while extending the cutoff wavelength beyond that possible in a lattice-matched state. Additionally, the strain-compensation layers are sufficiently thin to be substantially quantum-mechanically transparent such that they do not substantially affect the transmission efficiency of the absorber. The photodetector is preferably formed as a majority carrier filter photodetector exhibiting minimal dark current, and may be provided individually or in a focal plane array.

Abstract: A short optical pulse generator which includes an optical pulse generation portion that has a quantum well structure and generates an optical pulse, a frequency chirp portion that has a quantum well structure and chirps a frequency of the optical pulse, and a group velocity dispersion portion that includes a plurality of optical waveguides disposed in a mode coupling distance and which causes a group velocity difference corresponding to a wavelength in the optical pulse of which the frequency is chirped.

Abstract: An apparatus for detecting electromagnetic radiation within a target frequency range is provided. The apparatus includes a substrate and one or more resonator structures disposed on the substrate. The substrate can be a dielectric or semiconductor material. Each of the one or more resonator structures has at least one dimension that is less than the wavelength of target electromagnetic radiation within the target frequency range, and each of the resonator structures includes at least two conductive structures separated by a spacing. Charge carriers are induced in the substrate near the spacing when the resonator structures are exposed to the target electromagnetic radiation. A measure of the change in conductivity of the substrate due to the induced charge carriers provides an indication of the presence of the target electromagnetic radiation.

Abstract: A light detector includes a first light sensor and a second light sensor to detect incident light. A Ge film is disposed over the first light sensor to pass infra-red (IR) wavelength light and to block visible wavelength light. The Ge film does not cover the second light sensor.

Abstract: A semiconductor sensor includes a substrate and an absorber. The substrate includes at least one reflective component. The absorber is spaced apart from the at least one reflective component by a distance. The absorber defines a plurality of openings each having a maximum width that is less than or equal to the distance.

Abstract: A receiver chip for use in an imaging system includes a plurality of receiver dies, each of the receiver dies comprising one or more receiver circuits; a die interconnection layer located on top of the plurality of receiver dies; a quarter wave dielectric layer located on top of the die interconnection layer; and a plurality of antennae located on the quarter wave dielectric layer, each of the plurality of antennae corresponding to a respective receiver circuit, wherein the plurality of antennae are connected to the one or more receiver circuits through the quarter wave dielectric layer and the die interconnection layer by respective vias, such that a distance between a topmost layer of the die interconnection layer and the plurality of antennae is determined by a thickness of the quarter wave dielectric layer.

Abstract: A light detecting system is disclosed. The system comprises an arrangement of quantum dots forming an optically active region, a channel region and a charge carrier extractor between the active region and the channel region. The charge carrier extractor is characterized by a set of gradually decreasing energy levels between a characteristic excited energy level of the active region and a characteristic conductance energy level of the channel region.

Abstract: An infrared camera system is provided to detect absorption of infrared radiation in a selected spectral bandwidth. In one example, an infrared camera system includes a lens adapted to receive infrared radiation from a survey scene comprising one or more gasses. The infrared camera system also includes a focal plane array comprising a plurality of quantum well infrared photo detectors (QWIPs). The QWIPs are tuned to detect a limited spectral bandwidth of the infrared radiation corresponding to at least a portion of an infrared absorption band of the one or more gasses. The infrared camera system also includes an optical band pass filter positioned substantially between the lens and the focal plane array. The optical band pass filter is adapted to filter the infrared radiation to a wavelength range substantially corresponding to the limited spectral bandwidth of the QWIPs before the infrared radiation is received by the focal plane array.

Abstract: An Infra Red (IR) camera and method of operating the same is disclosed. The camera includes a detector having an infrared focal plane array (IRFPA). The camera is operated in such a fashion, implemented in software, to maximize the detector operating temperature under varying scene temperature and atmospheric conditions in order to achieve a predetermined and adequate level of sensitivity and operability from the detector.

Abstract: A terahertz generation system that emits pulsed THz radiation and incorporates a rapidly oscillating, high voltage bias across electrodes insulated from a photoconductive material. The system includes an ultrafast optical pulse source configured to generate an optical pulse having a duration between about ten picoseconds and ten femtoseconds, the pulse further having a repetition rate of about one megahertz or higher. The system further includes a photoconductor configured to receive the optical pulse from the ultrafast optical pulse source and to generate a terahertz frequency pulse, the photoconductor having insulated electrodes. The system still further includes a radio frequency generator configured to apply an electric field to the photoconductor via the insulated electrodes.

Abstract: A thermal detector includes a substrate, a thermal detection element and a support member. The substrate has a recess part with a bottom surface of the recess part being a curved light-reflecting surface. The thermal detection element has a light-absorbing film. The support member supports the thermal detection element. The substrate and the support member are arranged to form a hollow part therebetween. The support member includes a light-absorbing part in which impurities are dispersed in polycrystalline silicon with the light-absorbing part being arranged in at least a part of a surface of the support member facing toward the hollow part so that the light-absorbing part being irradiated by light.

Abstract: An image sensor system has an input from a photosensor, receiving photogenerated electricity, and coupling said photogenerated electricity to a first photodiode to integrate the photogenerated electricity. The photodiode can be a pinned diode, configured to act integrate charge.

Abstract: An infrared light detector has a first substrate having a sensor chip thereon that has an exposure surface that can be irradiated with infrared light, the sensor chip converting the incident infrared light into an electrical signal. The infrared light detector also has a second substrate having a window therein that is located adjacent to the exposure surface of the sensor chip, the window masking infrared light of a predetermined wavelength. The size (dimensions) of the window and the distance of the window with respect to the exposure surface are dimensioned to cause infrared light passing through the window to completely strike the exposure area of the sensor chip.

Abstract: A sensor based on light sensing is provided, including a visible light sensor, an IR sensor, an amplifier connected to visible light sensor and IR sensor, an auto-gain control (AGC) connected to amplifier, an A/D converter (ADC) connected to AGC, a digital filter connected to ADC, a multiplexer connected to both digital filter and ADC, a timing controller connected to amplifier, AGC, DC, and digital filter, a temperature sensor, a voltage reference connected to amplifier, an oscillator connected to ADC, an IR_LED driver for driving IR LEDs, a control register connected to timing controller, a data register connected to multiplexer, an I2C interface connected to external serial clock line (SCL) and serial data lines (SDA), and an interrupt interface connected to external interrupt bus (INTB). SCL, SDA and INTB are connected externally to a host able to read and display the result data from the sensor.

Abstract: High sensitivity thermal detectors that perform beyond the blackbody radiation noise limit are described. Thermal detectors, as described herein, use spectrally selective materials that absorb strongly in the wavelength region of the desired signal but only weakly or not at all in the primary thermal emission band. Exemplary devices that can be made in accordance with the present invention include microbolometers containing semiconductors that absorb in the MWIR and/or THz range but not the LWIR.

Abstract: The present invention is thus directed to an automated system and method of varying the optical path length in a sample that a light from a spectrophotometer must travel through. Such arrangements allow a user to easily vary the optical path length while also providing the user with an easy way to clean and prepare a transmission cell for optical interrogation. Such path length control can be automatically controlled by a programmable control system to quickly collect and stores data from different path lengths as needed for different spectrographic analysis. Such a methodology and system, as presented herein, is able to return best-match spectra with far fewer computational steps and greater speed than if all possible combinations of reference spectra are considered.

Abstract: [Object] To provide a gas monitoring device etc. with which gas monitoring can be preformed at high sensitivity by using an InP-based photodiode in which a dark current is reduced without a cooling mechanism and the sensitivity is extended to a wavelength of 1.8 ?m or more. [Solution] An absorption layer 3 has a multiquantum well structure composed of group III-V semiconductors, a pn-junction 15 is formed by selectively diffusion of an impurity element in the absorption layer, and the concentration of the impurity element in the absorption layer is 5×1016/cm3 or less. The gas monitoring device detects a gas component and the like contained in a gas by receiving light having at least one wavelength of 3 ?m or less.

Abstract: A Schottky barrier diode includes a first semiconductor layer, a LOCOS layer arranged in contact with the first semiconductor layer, a Schottky junction region provided on a contact surface between the first semiconductor layer and a first electrode, a second semiconductor layer connected to the first semiconductor layer and having a higher carrier concentration than that of the first semiconductor layer, and a second electrode forming an ohmic contact with the second semiconductor layer. In this case, the Schottky junction region and the LOCOS layer are in contact.

Abstract: This disclosure provides methods to integrate heat generating nanoparticles to microelectromechanical (MEMs) and photonic devices such as microbolometers and thermopiles for better photodetection and electrical energy generation. Nanoparticles include noble metal and semiconductor nanocrystals of different shapes, as light sensing and heat generating materials.

Abstract: A bolometer type Terahertz wave detector comprises: a temperature detecting portion having a thin bolometer film formed on a substrate, a reflective film that reflects Terahertz waves formed on the substrate at a position facing the temperature detecting portion, and an absorption film formed on the top surface of part of an eave-like member that extends to the inside from the perimeter edge section of the temperature detecting portion and that absorbs Terahertz waves. The reflective film and the absorption film form an optical resonant structure. A thermal isolation structure is formed by a support portion that supports the temperature detecting portion such that it is separated from the substrate by a gap. The eave-like member is supported by the support portion so that it is separated from the substrate by a gap.

Abstract: Methods of optimizing the diameters of nanowire photodiode light sensors. The method includes comparing the response of nanowire photodiode pixels having predetermined diameters with standard spectral response curves and determining the difference between the spectral response of the photodiode pixels and the standard spectral response curves. Also included are nanowire photodiode light sensors with optimized nanowire diameters and methods of scene reconstruction.

Abstract: A method for manufacturing a wafer level packaged focal plane array, in accordance with certain embodiments, includes forming a detector wafer, which may include forming detector arrays and read-out circuits. The method may also include forming a lid wafer. Forming the lid wafer may include polishing a surface of a magnetically confined Czochralski (MCZ) wafer, bonding a Czochralski wafer to the MCZ wafer, and forming pockets in the Czochralski wafer. Each pocked may expose a portion of the polished surface of the MCZ wafer. The method may further include bonding the lid wafer and the detector wafer together such that the each detector array and read-out circuit are sealed within a different pocket, thereby forming a plurality of wafer level packaged focal plane arrays. The method may additionally include separating at least one wafer level packaged focal plan array from the plurality of wafer level packaged focal plane arrays.

Abstract: Pixel-level monolithic optical element configurations for uncooled infrared detectors and focal plane arrays in which a monolithically integrated or fabricated optical element may be suspended over a microbolometer pixel membrane structure of an uncooled infrared detector element A monolithic optical element may be, for example, a polarizing or spectral filter element, an optically active filter element, or a microlens element that is structurally attached by an insulating interconnect to the existing metal interconnects such that the installation of the optical element substantially does not impact the thermal mass or thermal time constant of the microbolometer pixel structure, and such that it requires little if any additional device real estate area beyond the area originally consumed by the microbolometer pixel structure interconnects.

Abstract: A method for producing a photosensitive integrated circuit including producing circuit control transistors, producing, above the control transistors, and between at least one upper electrode and at least one lower electrode, at least one photodiode, by amorphous silicon layers into which photons from incident electromagnetic radiation are absorbed, producing at least one passivation layer, between the lower electrode and the control transistors, and producing, between the control transistors and the external surface of the integrated circuit, a reflective layer capable of reflecting photons not absorbed by the amorphous silicon layers.

Abstract: An apparatus for analyzing, identifying or imaging an target including first and second laser beams coupled to a pair of photoconductive switches to produce CW signals in one or more bands in a range of frequencies greater than 100 GHz focused on and transmitted through or reflected from the target; and a detector for acquiring spectral information from signals received from the target and using a multi-spectral heterodyne process to generate an electrical signal representative of some characteristics of the target. The lasers are tuned to different frequencies and a frequency shifter in the path of one laser beam allows the terahertz beam to be finely adjusted in one or more selected frequency bands.

Abstract: A radiation sensor (27) includes a radiation sensor chip (1) including first (7) and second (8) thermopile junctions connected to form a thermopile (7,8). The first thermopile junction is disposed in a floating portion of a dielectric membrane (3) thermally insulated from a silicon substrate (2) of the chip, and the second thermopile junction is disposed in the dielectric membrane directly adjacent to the substrate. Bump conductors (28) are bonded to corresponding bonding pads (28A) coupled to the thermopile (7,8) to physically and electrically connect the chip to conductors on a printed circuit board (23). The silicon substrate transmits infrared radiation to the thermopile while blocking visible light.

Abstract: A liquid component sensor includes: an infrared light source; a detection cell including: two substrates made of material for penetrating an infrared light therethrough and stacked each other; a passage for flowing liquid arranged between facing surfaces of the substrates; and a detection portion for detecting the liquid provided by at least a part of the passage; a spectrometer for dispersing light penetrating the detection cell; and a light detector for detecting dispersed light. Each substrate includes outside and facing surfaces, so that two substrates provide four surfaces totally. The detection cell further includes a filter for passing the infrared light having a predetermined wavelength selectively. The filter is disposed on at least one of four surfaces at a predetermined position, which corresponds to at least the detection portion.

Abstract: An improved system for evaluating one or more components of a vehicle is provided. The system includes a set of imaging devices configured to acquire image data based on infrared emissions of at least one vehicle component of the vehicle as it moves through a field of view of at least one of the set of imaging devices. An imaging device in the set of imaging devices can include a linear array of photoconductor infrared detectors and a thermoelectric cooler for maintaining an operating temperature of the linear array of detectors at a target operating temperature. The infrared emissions can be within at least one of: the mid-wavelength infrared (MWIR) radiation spectrum or the long wavelength infrared (LWIR) radiation spectrum.

Abstract: The invention relates to an optical element for guiding and forming a laser beam, and to a method for recording beam parameters, particularly in a laser system, comprising a carrier substrate (40) and a coating (39), which is applied to at least one side of the carrier substrate (40), and comprising at least one temperature sensor (38). The temperature sensor (38) is comprised of a number of pixels arranged in a matrix, and each respective pixel has at least one temperature-sensitive element (39). The at least one temperature-sensitive element (39) of the pixel is constructed inside the carrier substrate (40) made of silicon.

Abstract: A terahertz system can be configured for producing and coherently detecting terahertz radiation. The system can comprise a laser light source and two THz antennas, a first of which is used as a transmission antenna and a second of which is used as a receiver antenna, which are each optically coupled to the laser light source by an optical fibre and can be activated by light from this laser light source, wherein the THz antennas each have a semiconductor chip to which antenna conductors have been contact-connected and which comprises at least one photosensitive active layer with a band edge wavelength which is longer than a wavelength of the laser light source and at least one layer, adjoining the active layer, with a band edge wavelength which is shorter than the wavelength of the laser light source, wherein the band edge wavelength of the active layer of at least one of the THz antennas is at least 200 nm longer than the wavelength of the laser light source.

Abstract: A sensor for detecting intensity of radiation such as of infrared radiation includes an ROIC substrate (9) and a resistance element (1) arranged at a distance of the surface of the ROIC substrate. The resistance element comprises one more semiconducting layers such as a silicon semiconducting layer and a semiconducting layer of a silicon-germanium alloy forming a heterojunction. The semiconducting layer or layers can be doped with one or more impurity dopants, the doping level or levels selected so that the layer retains the basic crystallographic properties of the respective material such as those of monosilicon or a monocrystalline silicon-germanium alloy. The impurity dopants are selected from the elements in groups IE, IV, and V, in particular among boron, aluminium, indium, arsenic, phosphorous, antimony, germanium, carbon and tin. The doping can be abrupt so that there is an interior layer inside said semiconducting layer or layers having a significantly higher doping level.

Abstract: An optical device may include first and second lasers generating first and second laser beams; and a photo detector detecting the first and second laser beams. The optical detector comprises a substrate, a first impurity layer on the substrate, an absorption layer on the first impurity layer and a second impurity layer on the absorption layer. The absorption layer generates a terahertz by a beating of the first and second laser beams and has a thickness of less than 0.2 ?m.

Abstract: According to one embodiment, a solid state imaging device includes an infrared detection pixel configured to change an output potential by receiving infrared light, a non-sensitive pixel, a row select line, and a differential amplifier. An amount of change in an output potential when the non-sensitive pixel receives infrared light is smaller than an amount of change in an output potential when the infrared detection pixel receives the infrared light. The row select line is configured to apply a drive potential to both the infrared detection pixel and the non-sensitive pixel. The differential amplifier includes one input terminal to which an output potential of the infrared detection pixel is inputted and another input terminal to which an output potential of the non-sensitive pixel is inputted.

Abstract: A sensor device is configured to detect a level of carbon dioxide in a body of gas. The sensor device employs one or more lead selenide (PbSe) detectors as infrared sensing elements, and operates without the temperature regulation required by conventional PbSe-based sensors. Instead, measurements of detector device are compensated for a temperature measured by a relatively inexpensive thermal sensor. This may reduce the cost, enhance stability, enhance ruggedness, enhance manufacture and/or provide other advantages over conventional detectors.

Abstract: An apparatus for detecting radiation has a substrate, a protective housing fitting on the substrate, which has an electrically conductive material and a top facing away from the substrate, and that has an aperture therein. A stack is fitted on the substrate inside the protective housing and includes at least one detector substrate having at least one thermal detector element thereon that converts incoming thermal radiation into an electrical signal, at least one circuit carrier having at least one read circuit for reading out the electrical signal, and at least one cover that covers the detector element. The detector substrate is located between the circuit substrate and the cover. The detector substrate and the cover are arranged on each other such that the detector element of the detector substrate and the cover have at least one first stack cavity of the stack therebetween, the stack cavity being defined by the detector support and the cover.

Abstract: A method for manufacturing a MEMS device having an undercut shape formed on a fixed part includes a first step of forming an etching layer having a first cavity on the fixed part; a second step of forming a mask layer on a side wall of the etching layer, the side wall facing the first cavity; and a third step of directing an etchant fed into the first cavity on a surface side of the mask layer to a back surface side of the mask layer, isotropically etching the etching layer, forming a second cavity communicated with the first cavity on the back surface side of the mask layer, and processing the etching layer into an undercut shape.

Abstract: A detecting device includes at least one transmitter and plural receivers. After the at least one transmitter emits plural incident light beams to a detection zone, plural reflected light beams reflected from the detection zone are received by the plural receivers. If no object is moved within the detection zone, the plural reflected light beams strike a first part of the plural receivers, so that the plural receivers are in an initial reception configuration. If an object is moved within the detection zone, the plural reflected light beams are disturbed by the object and deflected to a second part of the plural receivers, so that the plural receivers are in a disturbed reception configuration. According to the reception configuration change, a moving direction of the object within the detection zone is determined. Consequently, the detecting range is largely enhanced, and the cost is reduced.

Abstract: The thermal detector includes a support member supported on a substrate. The support member has a mounting portion supporting a thermal detector element, and at least one arm portion connected at one end to the mounting portion and connected at the other end to the substrate. At least one of the mounting portion and the at least one arm portion has a first member disposed towards the substrate, a transverse width of a transverse cross-sectional shape of the first member set to a first width; a second member disposed toward the thermal detector element and facing the first member, a transverse width of the second member set to the first width; and a third member linking the first member and the second member, a transverse width of the third member set to a second width that is smaller than the first width.

Abstract: An infrared (IR) scene projector device includes a light emitter and a thermal emitter. The light emitter is configured to selectably provide visible light. The thermal emitter includes a vertically aligned carbon nanotube (VACN) array. The VACN array includes a plurality of carbon nanotubes disposed proximate to a thermally conductive substrate, such that a longitudinal axis of the carbon nanotubes extends substantially perpendicular to a surface of the substrate. The thermal emitter absorbs the visible light from the light emitter and converts the visible light from the light emitter into IR radiation.

Abstract: A radiation sensor includes first and second pixels with a radiation absorption filter positioned over the first pixel and an interference filter positioned over both the first and second pixels. The combined spectral response of the absorption filter and the first pixel has a first pixel pass-band and a first pixel stop-band. The interference filter has a first interference filter pass-band substantially within the first pixel pass-band and a second interference filter pass-band substantially within the first pixel stop-band.

Abstract: An IR detector in the form of a thermopile including one or more thermocouples on a dielectric membrane supported by a silicon substrate. Each thermocouple is composed of two materials, at least one of which is p-doped or n-doped single crystal silicon. The device is formed in an SOI process. The device is advantageous as the use of single crystal silicon reduces the noise in the output signal, allows higher reproducibility of the geometrical and physical properties of the layer and in addition, the use of an SOI process allows a temperature sensor, as well as circuitry to be fabricated on the same chip. The detector can also have an IR filter wafer bonded onto it and/or have arrays of thermopiles to increase the sensitivity. The devices can also be integrated with an IR source on the same silicon chip and packaged to form a complete and miniaturised NDIR sensor.

Abstract: Microbolometer pixel structures including membrane material in a current path between at least two spaced electrodes, the membrane material having multiple openings defined in the current path that are configured such that substantially the entire volume of electrically conductive membrane material in at least a portion of the current path contributes to conduction of current between the electrical contacts.

Abstract: A food quality examination device using a high-sensitivity light-receiving element. The light-receiving element includes a III-V compound semiconductor stacked structure including an absorption layer having a pn-junction therein, wherein the absorption layer has a multiquanturn well structure composed of group III-V compound semiconductors, the pn-junction is formed by selectively diffusing an impurity element into the absorption layer, a diffusion concentration distribution control layer composed of III-V group semiconductor is disposed in contact with the absorption layer on a side of the absorption layer opposite the side adjacent to the group III-V compound semiconductor substrate, the bandgap energy of the diffusion concentration distribution control layer is smaller than that of the group III-V semiconductor substrate, the concentration of the impurity element selectively diffused in the diffusion concentration distribution control layer is decreased to be 5×1016/cm3 or less toward the absorption layer.

Abstract: A method and apparatus for enhanced THz radiation coupling to molecules, includes the steps of depositing a test material near the discontinuity edges of a slotted member, and enhancing the THz radiation by transmitting THz radiation through the slots. The molecules of the test material are illuminated by the enhanced THz radiation that has been transmitted through the slots, thereby producing an increased coupling of EM radiation in the THz spectral range to said material. The molecules can be bio-molecules, explosive materials, or species of organisms. The slotted member can be a semiconductor film, a metallic film, in particular InSb, or layers thereof. THz detectors sense near field THz radiation that has been transmitted through said slots and the test material.

Abstract: An uncooled infrared imaging device according to an embodiment includes: reference pixels formed on a semiconductor substrate and arranged in at least one row; and infrared detection pixels arranged in the remaining rows and detecting incident infrared rays. Each of the reference pixels includes a first cell located above a first concave portion. The first cell includes a first thermoelectric conversion unit having a first infrared absorption film; and a first thermoelectric conversion element. Each of the infrared detection pixels includes a second cell located above a second concave portion, and having a larger area than the first cell. The second cell includes: a second thermoelectric converting unit located above the second concave portion; and first and second supporting structure units supporting the second thermoelectric converting unit above the second concave portion. The second thermoelectric converting unit includes: a second infrared absorption film; and a second thermoelectric conversion element.

Abstract: The bolometer-type THz wave detector according to the present invention has a thermal isolation structure in which a temperature detecting portion including a bolometer thin film connected to electrical wirings is supported in a state of being raised from the substrate by a supporting portion including the electrical wirings connected to a Read-out integrated circuit formed in a substrate, and the detector comprises a reflective film formed on the substrate, an absorbing film formed on the front surface or back surface or at an inner position in the temperature detecting portion , whereby an optical resonant structure is formed by the reflective film and the absorbing film, and a dielectric film formed on the reflective film. The dielectric film thickness f is set so that air gap between an upper surface of the dielectric film and a lower surface of the temperature detecting portion is smaller than 8 ?m.