Abstract: A solid-state relay having favorable electrical characteristics is provided. The solid-state relay includes a first circuit and a second circuit. The first circuit includes a first light-emitting element. The second circuit includes a first light-receiving element, a memory, and a first switch. The memory includes a second switch. The second switch includes a second semiconductor layer. The first switch and the first light-emitting element are formed using a first semiconductor layer. The first semiconductor layer and the second semiconductor layer contain gallium, and the second semiconductor layer further contains oxygen. On or off of the first light-emitting element is controlled by a first signal supplied to the first circuit. First data, which is generated when the first light-receiving element converts light emitted by the first light-emitting element into voltage, is supplied to the memory. Conduction or non-conduction of the first switch is controlled by the first data stored in the memory.

Abstract: The present application provides a backlight module, a display panel and an electronic device, including a substrate; a plurality of driving units, formed on the glass substrate; and a plurality of mini-LEDs, each of which includes a first electrode and a second electrode, wherein the driving unit includes a switching module, a driving module and a storing module, one end of the switching module is connected to the driving module and the storing module, the driving module is connected to the mini-LED.

Abstract: A lens driving device is provided, including: a holder member; a first driving unit disposed at the holder member; a base disposed at a lower side of the holder member and spaced apart from the holder member; a first circuit board disposed at an upper surface of the base; a second circuit board including a second driving unit facing the first driving unit, and disposed at an upper surface of the first circuit board; a support member supporting the holder member with respect to the base; and a guide portion protruded from an upper surface of the base, wherein the guide portion supports the second circuit board. In an embodiment, a coil at the second circuit board and a magnet at the holder member may be assembled at a predetermined interval, such that reliability of the product with respect to performance of handshake compensation device can be enhanced.

Abstract: A semiconductor light-emitting device includes a semiconductor stacked structure including a light-emitting layer, a metal electrode provided over the semiconductor stacked structure and having an opening for externally emitting a light emitted from the light-emitting layer, and a transparent electrode provided over the semiconductor stacked structure inside the opening and over the metal electrode.

Abstract: A photoresistor comprises two electrodes connected by a photosensitive layer of the photoresistor, and at least one additional layer which is in contact with the photosensitive layer in order to influence the behavior of the photoresistor regarding carrier collection between the two electrodes, in order to improve the sensitivity of the photoresistor.

Abstract: A semiconductor device includes a semiconductor structure including a first conductive semiconductor layer, a second conductive semiconductor layer, and an active layer provided between the first conductive semiconductor layer and the second conductive semiconductor layer, and a semiconductor device package including the semiconductor device. The active layer includes a plurality of barrier layers and a plurality of well layers. The second conductive semiconductor layer includes a conductive second semiconductor layer and a conductive first semiconductor layer provided on the conductive second semiconductor layer. The conductive second semiconductor layer has a higher aluminum composition than the well layers, and the conductive first semiconductor layer has a lower aluminum composition than the well layers.

Abstract: An organic electroluminescence (EL) display panel includes pixels arranged in a matrix of rows and columns, and includes: a substrate; pixel electrode layers that are arranged on the substrate in the matrix; an insulating layer that is provided above the substrate and the pixel electrode layers, and has elongated openings and a grooved portion for each of the pixels, the openings extending in a column direction and being arranged in a row direction, the grooved portion having an upper opening and a bottom and being communicated with at least one of the openings in plan view; organic functional layers that are provided above the pixel electrode layers, and include light emitting layers in which organic electroluminescence occurs in the openings; and a light-transmissive counter electrode layer that is provided above the organic functional layers. Cross-sectional profiles of the openings taken along the row direction are uniform in the column direction.

Abstract: A Dual-wavelength hybrid (DWH) device includes an n-type ohmic contact layer, cathode and anode terminal electrodes, first and second injector terminal electrodes, p-type and n-type modulation doped QW structures, and first through sixth ion implant regions. The first injector terminal electrode is formed on the third ion implant region that contacts the p-type modulation doped QW structure and the second injector terminal electrode is formed on the fourth ion implant region that contacts the n-type modulation doped QW structure. The DWH device operates in at least one of a vertical cavity mode and a whispering gallery mode. In the vertical cavity mode, the DWH device converts an in-plane optical mode signal to a vertical optical mode signal, whereas in the whispering gallery mode the DWH device converts a vertical optical mode signal to an in-plane optical mode signal.

Abstract: An IGBT includes a floating P well and a floating N+ well that extends down into the floating P well. A bottom surface of the floating P well has a waved contour with thinner portions and thicker portions. When the device is on, electrons flow laterally from an N+ emitter and through a channel region. Some electrons pass downward, but others pass laterally through the floating N+ well to one of the thinner portions of the floating P type well. The electrons then pass down from the thinner portions into the N? drift layer. Other electrons pass farther through the floating N+ well to subsequent, thinner electron injector portions of the floating P type well and then into the N? drift layer. The extra electron injection afforded by the waved floating well structure reduces VCE(SAT). The waved contour is made without adding any masking step to the IGBT manufacturing process.

Abstract: A semiconductor component having improved thermomechanical durability has in a semiconductor substrate at least one cell comprising a first main electrode zone, a second main electrode zone and a control electrode zone lying in between. For making contact with the main electrode zone, at least one metallization layer composed of copper or a copper alloy is provided which is connected to at least one bonding electrode which likewise comprises copper or a copper alloy.

Abstract: To improve detection efficiency in a solid-state imaging element including a SPAD in which an electrode and wiring are placed in a central portion. A solid-state imaging element includes a photodiode and a light collecting section. The photodiode includes a light receiving surface and an electrode placed on the light receiving surface, and that outputs an electrical signal in accordance with light incident on the light receiving surface in a state where a voltage exceeding a breakdown voltage is applied to the electrode. The light collecting section causes light from a subject to be collected in the light receiving surface other than a region where the electrode is placed.

Abstract: A unit pixel element that acts as an image sensor or a solar cell according to the present invention comprises a photo detector that drives a photocurrent flow, induced by light incident onto the gate, along the channel between the source and the drain; a first switch that is wired and switched on or switched off between the source terminal of the photo detector and the first solar cell bus; and a second switch that is wired and switched on or switched off between the gate terminal of the photo detector and the second solar cell bus, and features a function of light energy harvesting and high-efficiency photoelectric conversion that generates and supplies effective electric power.

Abstract: A unit pixel element that acts as an image sensor or a solar cell according to the present invention comprises a photo detector that drives a photocurrent flow, induced by light incident onto the gate, along the channel between the source and the drain; a first switch that is wired and switched on or switched off between the source terminal of the photo detector and the first solar cell bus; and a second switch that is wired and switched on or switched off between the gate terminal of the photo detector and the second solar cell bus, and features a function of light energy harvesting and high-efficiency photoelectric conversion that generates and supplies effective electric power.

Abstract: A thin film optical switch includes a layer of photosensitive material that extends laterally with first and second electrodes are spaced apart laterally from one another along the layer of photo sensitive material. The first and second electrodes contact the photo sensitive material at first and second junctions, respectively. At least one field plate is electrically insulated from the photo sensitive material and extends laterally along the layer of photo sensitive material over the first or the second junction. The field plate is electrically connected to the first electrode or the second electrode.

Abstract: A sapphire substrate with patterned structure includes a sapphire base; a plurality of the cavities formed on a surface of the sapphire base; and a template layer. The plurality of the cavities are periodically arranged at a predetermined distance from each other, and each of the plurality of the cavities has a bottom surface and a top opening. Each of the plurality of the cavities comprises at least a first and a second inclined surfaces, and the first and the second inclined surfaces are inclined by a first and a second angles respectively with respect to the bottom surface of the plurality of the cavities.

Abstract: The ultraviolet light emitting device includes a substrate; a light emitting structure on the substrate, and including a plurality of compound semiconductors, each including at least a first conductive semiconductor layer, an active layer, and a second conductive semiconductor layer; a first electrode layer on the first conductive semiconductor layer; and a second electrode layer on the second conductive semiconductor layer. The first electrode layer is spaced apart from a side surface of the active layer, and is provided along a peripheral portion of the active layer. At least one of the first and second electrode layers is a reflective layer.

Abstract: An IGBT includes a floating P well, and a floating N+ well that extends down into the floating P well. A bottom surface of the floating P well has a waved contour so that it has thinner portions and thicker portions. When the device is on, electrons flow laterally from an N+ emitter, and through a first channel region. Some electrons pass downward, but others pass laterally through the floating N+ well to a local bipolar transistor located at a thinner portion of the floating P type well. The transistor injects electrons down into the N? drift layer. Other electrons pass farther through the floating N+ well, through the second channel region, and to an electron injector portion of the N? drift layer. The extra electron injection afforded by the floating well structures reduces VCE(SAT). The waved contour is made without adding any masking step to the IGBT manufacturing process.

Abstract: A unit pixel element that acts as an image sensor or a solar cell according to the present invention comprises a photo detector that drives a photocurrent flow, induced by light incident onto the gate, along the channel between the source and the drain; a first switch that is wired and switched on or switched off between the source terminal of the photo detector and the first solar cell bus; and a second switch that is wired and switched on or switched off between the gate terminal of the photo detector and the second solar cell bus, and features a function of light energy harvesting and high-efficiency photoelectric conversion that generates and supplies effective electric power.

Abstract: A unit pixel element that acts as an image sensor or a solar cell according to the present invention comprises a photo detector that drives a photocurrent flow, induced by light incident onto the gate, along the channel between the source and the drain; a first switch that is wired and switched on or switched off between the source terminal of the photo detector and the first solar cell bus; and a second switch that is wired and switched on or switched off between the gate terminal of the photo detector and the second solar cell bus, and features a function of light energy harvesting and high-efficiency photoelectric conversion that generates and supplies effective electric power.

Abstract: A semiconductor device includes a first load terminal at a first surface of a semiconductor body and a second load terminal at the opposing surface. An active device area is surrounded by an edge termination area. Load terminal contacts are absent in the edge termination area and are electrically connected to the semiconductor body in the active device area at the first surface. A positive temperature coefficient structure is between at least one of the first and second load terminals and a corresponding one of the first and second surfaces. Above a maximum operation temperature specified for the semiconductor device, a specific resistance of the positive temperature coefficient structure increases by at least two orders of magnitude within a temperature range of at most 50 K. A degree of area coverage of the positive temperature coefficient structure is greater in the edge termination area than in the active device area.

Abstract: An imaging element includes: a plurality of pixels arranged into a two-dimensional matrix, configured to receive light from outside, and configured to generate and output an imaging signal according to an amount of light received; a first transfer line connected to the pixel and configured to transfer the imaging signal; a pixel selection unit configured to perform a selection operation of selecting a selection target pixel from among the plurality of pixels in order to read the imaging signal out to the first transfer line and a de-selection operation of canceling the selection of the pixel being selected; and control unit configured to control the pixel selection unit. The control unit performs the selection operation of selecting a new selection target pixel after performing the de-selection operation on the basis of a synchronization signal from outside.

Abstract: An optical XOR circuit that includes a thyristor and control circuitry operably coupled to terminals of the thyristor. The control circuitry is configured to control switching operation of the thyristor in response to the ON/OFF states of two digital optical signal inputs such that the thyristor produces a digital signal output that is the XOR function of the two digital optical signal inputs.

Abstract: One embodiment according to the present disclosure is an imaging apparatus including pixels. The pixel includes a junction type field effect transistor (JFET) provided in a semiconductor substrate. The JFET includes a gate region and a channel region. An orthogonal projection of the gate region onto a plane parallel to a surface of the semiconductor substrate intersects an orthogonal projection of the channel region onto the plane. Each of a source-side portion of the orthogonal projection of the channel region and a drain-side portion of the orthogonal projection of the channel region protrudes out of the orthogonal projection of the gate region.

Abstract: In an electronic circuit device, a circuit board (40) is disposed in an inner case (10), a light emitting element (50) is mounted on a surface on the reverse side of the surface having the circuit board (40) mounted thereon, and a light emitting element (50) is sealed by injecting a translucent resin (60) into the inner case (10). The inner case (10) is provided with a cylindrical section (12) that surrounds the light emitting element (50), and it is configured such that the height of the translucent resin (60) injected into the cylindrical section (12) is more than the height of the translucent resin (60) injected to the outside of the cylindrical section (12).

Abstract: A light emitting device according to the embodiment includes a first light emitting structure including a first conductive type first semiconductor layer, a first active layer under the first conductive type first semiconductor layer, and a second conductive type second semiconductor layer under the first active layer; a first reflective electrode under the first light emitting structure; a second light emitting structure including a first conductive type third semiconductor layer, a second active layer under the first conductive type third semiconductor layer, and a second conductive type fourth semiconductor layer under the second active layer; a second reflective electrode under the second light emitting structure; a contact part that electrically connects the first conductive type first semiconductor layer of the first light emitting structure to the second reflective electrode; and a first insulating ion implantation layer between the contact part and the second conductive type second semiconductor layer

Abstract: A semiconductor device suitable for power applications includes a thyristor epitaxial layer structure defining an anode region offset vertically from a cathode region with a plurality of intermediate regions therebetween. An anode electrode is electrically coupled to the anode region. A cathode electrode is electrically coupled to the cathode region. A switchable current path that extends vertically between the anode region and the cathode region has a conducting state and a non-conducting state. An epitaxial resistive region is electrically coupled to and extends laterally from one of the plurality of intermediate regions. An FET is provided having a channel that is electrically coupled to the epitaxial resistive region. The FET can be configured to inject (or remove) electrical carriers into (or from) the one intermediate region via the epitaxial resistive region in order to switch the switchable current path between its non-conducting state and its conducting state.

Abstract: There is provided a solid-state imaging apparatus that can prevent degradation of image quality. The solid-state imaging apparatus includes a plurality of pixels (1) including a photoelectric conversion element that performs photoelectric conversion; a signal line (6) to which the plurality of pixels output signals; and a first constant current circuit configured to supply a constant current to the signal line, wherein the first constant current circuit has a first transistor (5) having a drain or collector node connected to the signal line, and a first resistor (101) connected between a reference voltage node and a source or emitter node of the first transistor.

Abstract: A light emitting element includes a semiconductor substrate, and an island structure formed on the semiconductor substrate. The island structure includes a light-emitting-unit thyristor and a current confinement structure. The light-emitting-unit thyristor includes stacked semiconductor layers having a pnpn structure. The current confinement structure includes a high-resistance region and a conductive region, and confines carriers in the conductive region.

Abstract: A solid-state image pickup device includes a plurality of pixels, each of the pixels including a photoelectric conversion portion, a charge holding portion, a floating diffusion, and a transfer portion. The pixel also includes a beneath-holding-portion isolation layer and a pixel isolation layer. An end portion on a photoelectric conversion portion side of the pixel isolation layer is away from the photoelectric conversion portion compared to an end portion on a photoelectric conversion portion side of the beneath-holding-portion isolation layer, and an N-type semiconductor region constituting part of the photoelectric conversion portion is disposed under at least part of the beneath-holding-portion isolation layer.

Abstract: A semiconductor component includes a semiconductor substrate, and a doped well having a well terminal and a transistor structure having at least one potential terminal formed in the semiconductor substrate. The transistor structure has a parasitic thyristor, and is at least partly arranged in the doped well. The potential terminal and the well terminal are connected via a resistor.

Abstract: A light-emitting component includes: plural transfer thyristors each configured with a semiconductor layer stack laminating first to fourth semiconductor layers, and shifting to an ON state in order; plural coupling transistors each configured with the first to third semiconductor layers, provided to couple adjacent transfer thyristors, the first and the second semiconductor layers of the coupling transistor being continued to the first and the second semiconductor layers of the former transfer thyristor; plural first resistances, each provided between the third semiconductor layer of each transfer thyristor and a wiring for power supply; a second resistance having a resistance value smaller than a product of a resistance value of the first resistance and a ratio of a collector current of the coupling transistor to a cathode current of the transfer thyristor in the ON state; and plural light-emitting thyristors each configured with the semiconductor layer stack.

Abstract: According to example embodiments, a semiconductor device includes a first layer and second layer. The first layer includes a nitride semiconductor doped with a first type dopant. The second layer is below the first layer and includes a high concentration layer. The high concentration layer includes the nitride semiconductor doped with the first type dopant and has a doping concentration higher than a doping concentration of the first layer.

Abstract: Preferred embodiments of the invention include a thyristor core that is single biased by a source, such as a power source (or a portion thereof) that is being switched through the thyristors. An optically activated transistor that is preferably a minority carrier device is in series with the thyristor core. The thyristor core has an optically activated gate. The turn-off of the thyristor can be accelerated by the turn-on (conduction state) of a gate switch, which ensures a unity gain turn-off of the core thyristor.

Abstract: A solid-state imaging device includes semiconductor substrate; a plurality of photoelectric conversion sections of n-type that are formed at an upper part of semiconductor substrate and arranged in a matrix; output circuit that is formed on a charge detection surface that is one surface of semiconductor substrate and detects charges stored in photoelectric conversion sections; a plurality of isolating diffusion layers of a p-type that are formed under output circuit and include high concentration p-type layers adjacent to respective photoelectric conversion sections; and color filters formed on a light incident surface that is the other surface opposing the one surface of semiconductor substrate and transmit light with different wavelengths. Shapes of respective photoelectric conversion sections correspond to color filters and differ depending on the high concentration p-type layer configuring isolating diffusion layer.

Abstract: A semiconductor device is provided. The semiconductor device includes an avalanche photodiode unit and a thyristor unit. The avalanche photodiode unit is configured to receive incident light to generate a trigger current and comprises a wide band-gap semiconductor. The thyristor unit is configured to be activated by the trigger current to an electrically conductive state. A semiconductor device and a method for making a semiconductor device are also presented.

Abstract: Electrical components such as integrated circuits may be mounted on a printed circuit board. To prevent the electrical components from being subjected to electromagnetic interference, radio-frequency shielding structures may be formed over the components. The radio-frequency shielding structures may be formed from a layer of metallic paint. Components may be covered by a layer of dielectric. Channels may be formed in the dielectric between blocks of circuitry. The metallic paint may be used to coat the surfaces of the dielectric and to fill the channels. Openings may be formed in the surface of the metallic paint to separate radio-frequency shields from each other. Conductive traces on the surface of the printed circuit board may be used in connecting the metallic paint layer to internal printed circuit board traces.

Abstract: A system and method utilizing thyristor-based Photo-Conductive Semiconductor Switches (PCSS) for short pulse switching in high power microwave and/or broadband electromagnetic pulse generation is disclosed. The PCSS consists of thyristor-type NPNP structure having multiple emitter regions enclosed by the base region and multiple emitter shorts to divert leakage currents for voltage holding. The PCSS also includes an optical aperture comprised of patterned metallic grids for light illumination and current collection. The device structure is so constructed that there is only one single bevel around the peripheral. The thyristor-based PCSS have dual polarities of voltage blocking and have better efficiency for light requirement to operate at longer pulse duration compared to diode-based and bulk-semiconductor-based PCSS.

Abstract: Provided are a light emitting device, a light emitting device package and a lighting system comprising the same. The light emitting device comprises a light emitting structure comprising a first conductive type semiconductor layer, an active layer, and a second conductive type semiconductor layer, and an anti-reflection region on a lateral surface of the light emitting structure.

Abstract: A method of fabricating a light emitting diode array, comprising: providing a temporary substrate; forming a first light emitting stack and a second light emitting stack on the temporary substrate; forming a first insulating layer covering partial of the first light emitting stack; forming a wire on the first insulating layer and electrically connecting to the first light emitting stack and the second light emitting stack; forming a second insulating layer fully covering the first light emitting stack, the wire and partial of the second light emitting stack; forming a metal connecting layer on the second insulating layer and electrically connecting to the second light emitting stack; forming a conductive substrate on the metal connecting layer; removing the temporary substrate; and forming a first electrode connecting to the first light emitting stack.

Abstract: A thyristor includes a first conductivity type semiconductor layer, a first conductivity type carrier injection layer on the semiconductor layer, a second conductivity type drift layer on the carrier injection layer, a first conductivity type base layer on the drift layer, and a second conductivity type anode region on the base layer. The thickness and doping concentration of the carrier injection layer are selected to reduce minority carrier injection by the carrier injection layer in response to an increase in operating temperature of the thyristor. A cross-over current density at which the thyristor shifts from a negative temperature coefficient of forward voltage to a positive temperature coefficient of forward voltage is thereby reduced.

Abstract: A thin-film plasmonic device including a layer of a conductive material positioned over an array of electrodes of alternating polarity.

Abstract: The image sensor includes a substrate; a wiring structure formed on a front side of the substrate and including a plurality of wiring layers and a plurality of insulating films; a first well formed within the substrate and having a first conductivity type; and a first metal wiring layer directly contacting a backside of the substrate and configured to apply a first well bias to the first well.

Abstract: A semiconductor device includes a direct light-triggered thyristor triggered by an optical gate signal, a first optical fiber connected to the direct light-triggered thyristor and through which the optical gate signal is transmitted, a second optical fiber used to extend the first optical fiber, and a inter-optical-fiber relaying unit configured to connect the first optical fiber to the second optical fiber and to input the optical gate signal output from the second optical fiber to the first optical fiber.

Abstract: The objective of this invention is to provide a semiconductor device having a thyristor that can shorten the turn-off time. A first electroconductive type first semiconductor region 20 is formed on a substrate, and a second electroconductive type second semiconductor region 22, a second electroconductive type third semiconductor region 23, designated as an anode, and a first electroconductive type fourth semiconductor region 24, designated as an anode gate, are formed on the surface layer part of the first semiconductor region. Also, a first electroconductive type fifth semiconductor region 26, designated as a cathode, and a second electroconductive type sixth semiconductor region 25, designated as a cathode gate, are formed on the surface layer part of the second semiconductor region.

Abstract: A monolithically integrated light-activated thyristor in an n-p-n-p-n-p sequence consists of a four-layered thyristor structure and an embedded back-biased PN junction structure as a turn-off switching diode. The turn-off switching diode is formed through structured doping processes and/or depositions on a single semiconductor wafer so that it is integrated monolithically without any external device or semiconductor materials. The thyristor can be switching on and off optically by two discrete light beams illuminated on separated openings of electrodes on the top surface of a semiconductor body. The carrier injection of the turning on process is achieved by illuminating the bulk of the thyristor with a high level light through the first aperture over the cathode to create high density charge carriers serving as the gate current injection and to electrically short the emitter and drift layer.

Abstract: A single-photon detector is disclosed that provides reduced afterpulsing without some of the disadvantages for doing so in the prior art. An embodiment of the present invention provides a stimulus pulse to the active area of an avalanche photodetector to stimulate charges that are trapped in energy trap states to detrap. In some embodiments of the present invention, the stimulus pulse is a thermal pulse.

Abstract: A light emitting diode package structure having a heat-resistant cover and a method of manufacturing the same include a base, a light emitting diode chip, a plastic shell, and a packaging material. The plastic shell is in the shape of a bowl and has an injection hole thereon. After the light emitting diode chip is installed onto the base, the plastic shell is covered onto the base to fully and air-tightly seal the light emitting diode chip, and the packaging material is injected into the plastic shell through the injection hole until the plastic shell is filled up with the packaging material to form a packaging cover, and finally the plastic shell is removed to complete the LED package structure.

Abstract: An image sensor chip package structure includes a transparent substrate, a chip, a sealing ring, a number of conductive posts, and a number of conductive bumps. The transparent substrate has a number of through holes. The through holes pass through the transparent substrate. The chip has an active surface, an image sensitive area, and a number of die pads. The image sensitive area and the die pads are located on the active surface. The sealing ring is disposed between the chip and the transparent substrate and surrounds the image sensitive area and the die pads. The conductive posts are disposed in the through holes, respectively. Here, the chip is electrically connected with the conductive posts via the die pads. The conductive bumps are disposed on the die pads, respectively. The conductive bumps are connected with the conductive posts, respectively.

Abstract: An array of thyristor detector devices is provided having an epitaxial growth structure with complementary types of modulation doped quantum well interfaces located between a P+ layer and an N+ layer. The thyristor detector devices operate over successive cycles that each include a sequence of two distinct modes: a setup mode and a signal acquisition mode. During the setup mode, the n-type quantum well interface and/or the p-type quantum well interface is(are) substantially emptied of charge. During the signal acquisition mode, photocurrent is generated by the thyristor detector device in response to the absorption of incident electromagnetic radiation therein, which can induce the thyristor detector device to switch from an OFF state to an ON state. The OFF/ON state of the thyristor detector device produces an output digital electrical data that corresponds to the amount of incident radiation absorbed by the thyristor detector device during the signal acquisition mode of the current cycle.

Abstract: The present invention provides a method and apparatus for providing electro-static discharge (ESD) protection between a first and a second circuit node. One embodiment of the ESD protection circuit includes one or more steering diodes that generate electromagnetic radiation and couple the first circuit node to ground in response to a voltage applied to the first circuit node. The ESD protection circuit also includes a latch circuit that couples the first circuit node to ground in response to the electromagnetic radiation generated by the steering diode(s).