Abstract: An image sensing device includes a photoelectric conversion element, a floating diffusion (FD) region, and a transfer gate. The photoelectric conversion element is disposed in a substrate, and generates photocharges in response to incident light. The floating diffusion (FD) region is disposed over the photoelectric conversion element, and stores the photocharges generated by the photoelectric conversion element. The transfer gate transfer the photocharges generated by the photoelectric conversion element to the floating diffusion (FD) region in response to a transmission signal. The transfer gate includes a horizontal gate disposed over the photoelectric conversion element, and a vertical gate coupled to the horizontal gate. The vertical gate is positioned at a side of the photoelectric conversion element, and surrounds the photoelectric conversion element.

Abstract: The present technology relates to a solid-state imaging device and electronic equipment to suppress degradation of Dark characteristics. A photoelectric converting unit configured to perform photoelectric conversion, and a PN junction region including a P-type region and an N-type region on a side of a light incident surface of the photoelectric converting unit are included. Further, on a vertical cross-section, the PN junction region is formed at three sides including a side of the light incident surface among four sides enclosing the photoelectric converting unit. Further, a trench which penetrates through a semiconductor substrate in a depth direction and which is formed between the photoelectric converting units each formed at adjacent pixels is included, and the PN junction region is also provided on a side wall of the trench. The present technology can be applied, for example, to a backside irradiation type CMOS image sensor.

Abstract: An image sensor including: a substrate which has a first surface and a second surface opposite to the first surface and pixels arranged in a two-dimensional array, wherein each of the pixels includes a photodiode; a multi-wiring layer arranged on the first surface of the substrate; a color filter layer arranged on the second surface of the substrate and including color filters that respectively correspond to the pixels; and a lens layer arranged on the color filter layer and including a double-sided spherical lens, wherein the double-sided spherical lens includes at least two material layers having different refractive indexes.

Abstract: A solid-state imaging element of a pixel sharing type with improved driving of transistors is disclosed. A first electric charge accumulating section and a second electric charge accumulating section are arranged in a predetermined direction. A first transfer section transfers electric charge from first photoelectric conversion elements to the first electric charge accumulating section, causing it to accumulate the electric charge. A second transfer section transfers electric charge from second photoelectric conversion elements to the second electric charge accumulating section, causing it to accumulate the electric charge. A first transistor is configured to output a signal corresponding to an amount of the electric charge accumulated in each of the first electric charge accumulating section and the second electric charge accumulating section. A second transistor is arranged with the first transistor in the predetermined direction and connected in parallel to the first transistor.

Abstract: The present technology relates to a light receiving element and a ranging module that can improve characteristics. A light receiving element includes: light receiving regions each including a first voltage application unit to which a first voltage is applied, a first charge detection unit provided around the first voltage application unit, a second voltage application unit to which a second voltage different from the first voltage is applied, and a second charge detection unit provided around the second voltage application unit; and an isolation portion that is arranged at a boundary between the light receiving regions adjacent to each other, and isolates the light receiving regions from each other. The present technology can be applied to a light receiving element.

Abstract: An imaging device includes a first electrode, a charge accumulating electrode arranged with a space from the first electrode, an isolation electrode arranged with a space from the first electrode and the charge accumulating electrode and surrounding the charge accumulating electrode, a photoelectric conversion layer formed in contact with the first electrode and above the charge accumulating electrode with an insulating layer interposed therebetween, and a second electrode formed on the photoelectric conversion layer. The isolation electrode includes a first isolation electrode and a second isolation electrode arranged with a space from the first isolation electrode, and the first isolation electrode is positioned between the first electrode and the second isolation electrode.

Abstract: A method includes forming a bottom source/drain contact plug in a bottom inter-layer dielectric. The bottom source/drain contact plug is electrically coupled to a source/drain region of a transistor. The method further includes forming an inter-layer dielectric overlying the bottom source/drain contact plug. A source/drain contact opening is formed in the inter-layer dielectric, with the bottom source/drain contact plug exposed through the source/drain contact opening. A dielectric spacer layer is formed to have a first portion extending into the source/drain contact opening and a second portion over the inter-layer dielectric. An anisotropic etching is performed on the dielectric spacer layer, and a remaining vertical portion of the dielectric spacer layer forms a source/drain contact spacer. The remaining portion of the source/drain contact opening is filled to form an upper source/drain contact plug.

Abstract: According to one embodiment, a display device includes a first substrate and a second substrate. The first substrate includes a first switching element, a second switching element, a first organic insulating layer, a second organic insulating layer, a third organic insulating layer, a first connection electrode electrically connected to the first switching element, a second connection electrode electrically connected to the first connection electrode, a pixel electrode electrically connected to the second connection electrode, and a photoelectric conversion element electrically connected to the second switching element.

Abstract: An image sensor may include a first photo gate and a second photo gate each extending substantially in parallel in a first direction, the first photo gate and the second photo gate isolated from direct contact with each other in a second direction, the second direction substantially orthogonal to the first direction, a first overflow gate between the first photo gate and the second photo gate, the first overflow gate extending in the first direction, a first charge collection region on the first photo gate, a second charge collection region on the second photo gate and isolated from direct contact with the first charge collection region in the second direction, a first floating diffusion region that may receive first charge from the first charge collection region and output the first charge, and a second floating diffusion region that may receive second charge from the second charge collection region and output the second charge.

Abstract: Color mixing between pixels is prevented in a solid-state imaging element in which a pair of pixels for detecting the phase difference of a pair of light rays are arranged. A pair of photoelectric conversion elements receive a pair of light rays made by pupil-splitting. A floating diffusion layer generates a pair of pixel signals from electric charge transferred from each of the pair of photoelectric conversion elements. A pair of transfer transistors transfer the electric charge from the pair of photoelectric conversion elements to the floating diffusion layer. In a case of detecting the phase difference of the pair of light rays from the pair of pixel signals, the control unit takes control so that back gate voltages that include the back gate potentials of both of the pair of transfer transistors with respect to the potential barrier between the pair of photoelectric conversion elements have values different from values in a case of synthesizing the pair of pixel signals.

Abstract: An image sensing device includes a photoelectric conversion element, a floating diffusion (FD) region, and a transfer gate. The photoelectric conversion element is disposed in a substrate, and generates photocharges in response to incident light. The floating diffusion (FD) region is disposed over the photoelectric conversion element, and stores the photocharges generated by the photoelectric conversion element. The transfer gate transfer the photocharges generated by the photoelectric conversion element to the floating diffusion (FD) region in response to a transmission signal. The transfer gate includes a horizontal gate disposed over the photoelectric conversion element, and a vertical gate coupled to the horizontal gate. The vertical gate is positioned at a side of the photoelectric conversion element, and surrounds the photoelectric conversion element.

Abstract: A photodiode assembly comprises a photoconductive substrate, including a P-doped region coupled with a controllable voltage biasing source, and an adjacent N-doped well. The photodiode assembly further comprises first and second capacitors coupled with the photoconductive substrate on first and second sides of the N-doped well. First and second control inputs are also coupled with the photoconductive substrate, wherein activation of the first control input causes electrons to flow through a first multiplication region of the N-doped well toward the first capacitor in response to photons striking the photoconductive substrate, and activation of the second control input causes electrons to flow through a second multiplication region of the N-doped well toward the second capacitor in response to photons striking the photoconductive substrate.

Abstract: Backside illuminated sensor pixel structure. In one embodiment, and image sensor includes a plurality of pixels arranged in rows and columns of a pixel array that are disposed in a semiconductor substrate. Individual photodiodes of the pixel array are configured to receive an incoming light through a backside of the semiconductor substrate. A front side of the semiconductor substrate is opposite from the backside. A plurality of transistors disposed proximate to the front side of the semiconductor substrate, are arranged in a row along an outer perimeter of the photodiodes of the respective pixel; and a plurality of isolation structures arranged to bracket the row of transistors along the outer perimeter of the photodiodes. A plurality of contacts electrically contacting the plurality of isolation structures, and the contacts are configured to voltage-bias the plurality of isolation structures.

Abstract: The present technology relates to an imaging element and an electronic device enabling suppression of generation of noise. Provided with a substrate, a first photoelectric conversion region provided on the substrate, a second photoelectric conversion region provided on the substrate and adjacent to the first photoelectric conversion region, a trench provided on the substrate and between the first photoelectric conversion region and the second photoelectric conversion region, a first impurity region including a first impurity provided on the substrate and on a sidewall of the trench, and a second impurity region including a second impurity provided on the substrate and between the first photoelectric conversion region or the second photoelectric conversion region and the first impurity region. The present technology can be applied to an imaging element.

Abstract: The present disclosure related to a visible light communication apparatus, comprising a substrate; a TFT structure layer on the substrate; a photoelectric conversion component on a source or a drain of the TFT structure layer; and a light-emitting component on the substrate. The photoelectric conversion component may be configured to receive an optical signal and convert the optical signal into an electrical signal; and the light-emitting component may be configured to emit an optical signal.

Abstract: Disclosed herein are image apparatuses comprising a frontside surface, a backside surface, a storage region (e.g., a storage node or a floating diffusion node), the storage region being situated closer to the frontside surface than to the backside surface, a storage well situated between the backside surface and the storage region, and a doping region situated between the storage region and the storage well. An impurity type of the doping region is opposite an impurity type of the storage well. A lateral area of the storage well is greater than or equal to a lateral area of the storage region, and no portion of a lateral perimeter of the storage region extends outside of a lateral perimeter of the storage well.

Abstract: A signal processing circuit includes a reference signal line, a processing circuit that processes a potential of the reference signal line and a potential of an input signal, a first reference voltage supplying circuit that outputs a predetermined potential to one end of the reference signal line, and a second reference voltage supplying circuit that outputs a predetermined potential to the other end of the reference signal line.

Abstract: A light sensing device includes a substrate, a gate electrode, a shielding electrode, a insulating layer, a semiconductor layer, a source electrode, and a drain electrode. The gate electrode and the shielding electrode are disposed over the substrate and spaced apart from each other. The insulating layer is disposed over the gate electrode and the shielding electrode. The semiconductor layer is disposed over the insulating layer. The source and drain electrodes are respectively connected to the semiconductor layer, and the semiconductor layer has a channel region between the source and drain electrodes. The channel region is divided into a first region adjacent to the drain electrode and overlapping the gate electrode and a second region adjacent to the source electrode and not overlapping the gate electrode, and the second region partially overlaps the shielding electrode.

Abstract: The present disclosure relates to a solid-state imaging device, a manufacturing method thereof, and an electronic apparatus, in which both oblique light characteristics and sensitivity can be improved. The solid-state imaging device includes pixel array unit in which a plurality of pixels is two-dimensionally arranged in a matrix and multi-stage light shielding walls are provided between the pixels. The present disclosure is applicable to, for example, a back-illuminated type solid-state imaging device and the like.

Abstract: A semiconductor relay device includes a conversion circuit configured to receive an input signal from outside and pass a first current to a first node based on the input signal. A zener diode has an anode coupled to a second node and a cathode coupled to the first node. A resistor is coupled between the second node and a third node. A number n of diodes are serially coupled. A thyristor has an anode coupled to the first node, a cathode coupled to the second node, and a control terminal coupled to the third node. A transistor has a gate coupled to the first node. An anode of a diode at a first end of the n diodes is coupled to the first node, and a cathode of a diode at a second end of the n diodes is coupled to a third node.

Abstract: Provided is an apparatus for measuring a depth with a pseudo 4-tap pixel structure, the apparatus including a delta sigma circuit configured to calculate, through a delta sigma operation, a delta value of a first angle corresponding to a first row line of a pixel array for measuring a depth of an object and calculate, through a delta sigma operation, a delta value of a third angle corresponding to a second row line of the pixel array, a memory configured to store the calculated delta value of the first angle corresponding to the first row line, and an arithmetic logic unit (ALU) configured to compute depth information corresponding to the first row line by using the stored delta value of the first angle corresponding to the first row line and the calculated delta value of the third angle corresponding to the second row line.

Abstract: The present disclosure relates to a solid-state image pickup device, a manufacturing method, and an electronic apparatus, which can obtain high charge transfer efficiency from a photoelectric conversion unit to a floating diffusion layer. The floating diffusion layer is arranged in a rectangular shape so as to surround a gate electrode of a vertical transistor whose groove portion is rectangular. A reset drain is formed so as to be adjacent to the floating diffusion layer through a reset gate. A potential of the floating diffusion layer is reset to the same potential as that of the reset drain by applying a predetermined voltage to the reset gate. It is possible to apply the present disclosure to, for example, a CMOS solid-state image pickup device used in an image pickup device such as a camera.

Abstract: An image signal processor includes a register and a disparity correction unit. The register stores disparity data obtained from a pattern image data that an image senor generates, and the image sensor includes a plurality of pixels, and each of the pixel includes at least a first photoelectric conversion element and a second photoelectric conversion element. The image sensor generates the pattern image data in response to a pattern image located at a first distance from the image sensor. The disparity correction unit corrects a disparity distortion of an image data based on the disparity data to generate a result image data, and the image senor generates the image data by capturing an object.

Abstract: An image sensor includes a semiconductor substrate including a plurality of pixel regions, a first surface, and a second surface opposing the first surface, a plurality of transistors adjacent to the first surface of the semiconductor substrate in each of the plurality of pixel regions, a microlens on the second surface of the semiconductor substrate, and a plurality of conductive patterns in contact with the semiconductor substrate and closer to the second surface of the semiconductor substrate than to the first surface of the semiconductor substrate in each of the plurality of pixel regions.

Abstract: The present disclosure relates to an imaging device, a method for manufacturing an imaging device, and an electronic device capable of reducing light entering an electric-charge holding unit in a back-illuminated imaging device. An imaging device includes: a photoelectric conversion unit; an electric-charge holding unit; a semiconductor substrate; a wiring layer; an insulation film layer; a first light-shielding film; and a second light-shielding film. The insulation film layer, the first light-shielding film, and the wiring layer are stacked on a second surface of the semiconductor substrate. The second light-shielding film includes: a first light-shielding portion extending from the first surface of the semiconductor substrate to a middle of the semiconductor substrate; a second light-shielding portion penetrating the semiconductor substrate; and a third light-shielding portion covering a part of the first surface of the semiconductor substrate.

Abstract: A photoelectric conversion apparatus according to an exemplary embodiment includes a plurality of pixels each including a photoelectric conversion unit, a transistor configured to process a signal charge generated in the photoelectric conversion unit, and an analog-to-digital conversion circuit. The apparatus further includes a first semiconductor substrate on which the photoelectric conversion units and the transistors of the plurality of pixels are two-dimensionally arranged, a second semiconductor substrate on which a plurality of circuit blocks is two-dimensionally arranged, a bonding portion configured to electrically connect the first semiconductor substrate and the second semiconductor substrate, and a wiring arranged between the first semiconductor substrate and the bonding portion. The wiring is connected to the transistors of the plurality of pixels and configured to supply a control signal to the transistors of the plurality of pixels.

Abstract: An imaging device and an electronic apparatus including an imaging device are provided. The imaging device includes a substrate and plurality of pixel regions, wherein each pixel region includes: a first photoelectric conversion portion that performs photoelectric conversion according to a first wavelength of incident light; a first reading portion that reads charges converted by the first photoelectric conversion portion; a first storage unit that is formed between adjacent pixels and stores the charges read by the first reading portion; a second photoelectric conversion portion that performs photoelectric conversion according to a second wavelength different from the first wavelength; a second reading portion that reads charges converted by the second photoelectric conversion portion; and a second storage unit that is formed between adjacent pixels and stores the charges read by the second reading portion.

Abstract: There is set forth herein an optoelectrical system comprising: a conductive path for supplying an input voltage to a photonics device, wherein the conductive path comprises a base structure through via extending through a substrate and a photonics structure through via, the photonics structure through via extending through a photonics device dielectric stack. There is set forth herein an optoelectrical system comprising: a second structure fusion bonded to an interposer base dielectric stack of a first structure. There is set forth herein a method comprising: fabricating a second wafer built structure using a second wafer, the second wafer built structure defining a photonics structure and having a photonics device integrated into a photonics device dielectric stack of the second wafer based structure; and wafer scale bonding the second wafer built structure to a first wafer built structure.

Abstract: Photoelectric conversion device includes stacked first and second substrates. The first substrate includes pixel array, first joint portion arranged in the pixel array and connected to pixels in the pixel array, and power supply pad connected to the first joint portion. The second substrate includes readout circuit to read signal from the pixel array via signal line, and second joint portion jointed to the first joint portion. The readout circuit includes limiter circuit to limit amplitude of potential of the signal line. Power supply terminal of the limiter circuit is connected to the second joint portion, and power supply potential applied to the power supply pad is supplied to the pixels and supplied to the power supply terminal of the limiter circuit via the first and second joint portions.

Abstract: There is provided a solid-state image pickup device including: a semiconductor substrate; a photodiode formed in the semiconductor substrate; a transistor having a gate electrode part or all of which is embedded in the semiconductor substrate, the transistor being configured to read a signal electric charge from the photodiode via the gate electrode; and an electric charge transfer layer provided between the gate electrode and the photodiode.

Abstract: A CMOS image sensor has an array of photodiode cells, the photodiode cells each include four buried photodiodes coupled by vertical transfer gate transistors to a single floating node diffusion. Each cell also has a reset transistor coupled to the floating node diffusion, a source follower transistor having gate coupled to the floating node diffusion, and a read select transistor coupled to the source follower transistor. The reset transistor, source follower transistor, and read select transistor have predominately gate and shape edges oriented at an angle greater than 30-degrees and less than 60-degrees from a line extending along an entire horizontal row of photodiodes of a photodiode array of the image sensor and are formed vertically above, and in the same integrated circuit as, the photodiodes of the photodiode array.

Abstract: An image sensor includes a substrate including a photodiode and first and second floating diffusion nodes which are disposed to be spaced apart from left and right of the photodiode, respectively, by a predetermined distance; a first transfer gate disposed on the substrate to overlap at least partially with the photodiode and the first floating diffusion node; and a second transfer gate disposed on the substrate to overlap at least partially with the photodiode and the second floating diffusion node, wherein each of the first transfer gate and the second transfer gate includes a first gate dielectric layer which overlaps at least partially with the photodiode and a second gate dielectric layer which overlaps at least partially with the first or second floating diffusion node, and wherein a thickness of the first gate dielectric layer is larger than a thickness of the second gate dielectric layer.

Abstract: The present disclosure provides an optical sensor, a manufacturing method thereof, a display device, and a display apparatus, and relates to the display technology. The optical sensor includes a thin film transistor and a PIN diode on a surface of a drain of the thin film transistor. A material of a P region of the PIN diode, a material of an I region of the PIN diode, and a material of an N region of the PIN diode are oxides. Since the PIN diode is made of oxides rather than amorphous silicon, hydrogen is not introduced. Therefore, the performance of the thin film transistor will not be affected, thereby achieving the improvement of the performance of the display device and the display effect.

Abstract: The present technology relates to a solid-state imaging device, a manufacturing method thereof, and an electronic device that enable improvement of the sensitivity in a near infrared region by a simpler process. A solid-state imaging device includes: a first semiconductor layer in which a first photoelectric conversion unit and a first floating diffusion are formed; a second semiconductor layer in which a second photoelectric conversion unit and a second floating diffusion are formed; and a wiring layer including a wiring electrically connected to the first and second floating diffusions. The first semiconductor layer and the second semiconductor layer are laminated, and the wiring layer is formed on a side of the first or second semiconductor layer, the side being opposite to a side on which the first semiconductor layer and the second semiconductor layer face each other. The present technology can be applied to a CMOS image sensor.

Abstract: A solid-state imaging device includes: a plurality of pixels arranged in a matrix on a semiconductor substrate, wherein each of the plurality of pixels includes: a photoelectric converter that converts received light into a signal charge; a plurality of read gates that each read the signal charge from the photoelectric converter; a plurality of charge accumulators that each accumulate the signal charge read by any one of the plurality of read gates; and a charge holder that receives, from one of the plurality of charge accumulators, transfer of the signal charge accumulated in the charge accumulator, holds the signal charge, and transfers, to one of the plurality of charge accumulators, the signal charge held.

Abstract: Methods and systems for image sensing are provided. In one example, an apparatus comprises a semiconductor substrate comprising a light incident surface to receive light, a first pinned photodiode, and a second pinned photodiode, the first pinned photodiode and the second pinned photodiode forming a stack structure in the semiconductor substrate along an axis perpendicular to the light incident surface, the stack structure enabling the first pinned photodiode and the second pinned photodiode to, respectively, convert a first component of the light and a second component of the light to first charge and second charge. The apparatus further comprises one or more capacitors formed in the semiconductor substrate and configured to generate a first voltage and a second voltage based on, respectively, the first charge and the second charge.

Abstract: An electronic device includes a plurality of pixel electrodes, an active layer on the plurality of pixel electrodes, an opposed electrode on the active layer and covering an entirety of an upper surface of the active layer, and a first encapsulation film on the opposed electrode wherein the opposed electrode and the first encapsulation film have a common planar shapes.

Abstract: An image sensor includes a plurality of pixels each including: a first and a second photoelectric conversion unit that perform photoelectric conversion upon light that has passed through a micro lens and generates a charge; a first accumulation unit that accumulates the charge generated by the first conversion unit; a second accumulation unit that accumulates the charge generated by the second conversion unit; a third accumulation unit that accumulates the charges generated by the first and second conversion units; a first transfer unit that transfers the charge generated by the first conversion unit to the first accumulation unit; a second transfer unit that transfers the charge generated by the second conversion unit to the second accumulation unit; and a third transfer unit that transfers the charges generated by the first and second conversion units to the third accumulation unit.

Abstract: At least one array of LEDs (e.g., in a flip chip configuration) is supported by a substrate having a light extraction surface overlaid with at least one lumiphoric material. Light segregation elements registered with gaps between LEDs are configured to reduce interaction between emissions of different LEDs and/or lumiphoric material regions to reduce scattering and/or optical crosstalk, thereby preserving pixel-like resolution of the resulting emissions. Light segregation elements may be formed by mechanical sawing or etching to define grooves or recesses in a substrate, and filling the grooves or recesses with light-reflective or light-absorptive material. Light segregation elements external to a substrate may be defined by photolithographic patterning and etching of a sacrificial material, and/or by 3D printing.

Abstract: An image sensor including a substrate having a first, a first device isolation region adjacent to the first surface and defining a unit pixel, a transfer gate on the first surface at an edge of the unit pixel, a photoelectric conversion part in the substrate and adjacent to a first side surface of the transfer gate, and a floating diffusion region in the substrate and adjacent to a second side surface of the transfer gate. The second side surface faces the first side surface. The first device isolation region is spaced apart from the second side surface. The substrate and the first device isolation region are doped with impurities having a first conductivity. A first impurity concentration of the first device isolation region is greater than a second impurity concentration of the substrate.

Abstract: An image sensor is provided. The image sensor includes: a pixel array including a plurality of pixels arranged along rows and columns; and a row driver which drives the plurality of pixels for each of the rows, wherein each of the plurality of pixels includes a plurality of sub-pixels, each of the plurality of sub-pixels includes a plurality of photoelectric conversion elements sharing a floating diffusion area with each other, and a micro lens disposed to overlap the plurality of photoelectric conversion elements, a readout area is defined on the pixel array in accordance with a preset readout mode, and the row driver generates a drive signal for reading out signals provided from a photoelectric conversion element included in the readout area from among the plurality of photoelectric conversion elements, and provides the drive signal to the pixel array.

Abstract: A method for manufacturing an optical sensor is provided. The operations of the method for manufacturing the optical sensor includes providing a semiconductive layer having an electrical circuit area and an optical sensing area; forming a first electrical contact directly over the electrical circuit area; forming a first light guiding part directly over the optical sensing area simultaneously with forming the first electrical contact; forming a first metal layer directly over the first electrical contact; forming a second light guiding part directly over the first light guiding part simultaneously with forming a second electrical contact directly over the first electrical contact; forming a thick metal layer over the electrical circuit area and an optical sensing area; and forming an aperture in the thick metal layer, wherein the aperture aligning with the optical sensing area.

Abstract: An imaging device and an electronic apparatus including an imaging device are provided. The imaging device includes a substrate and plurality of pixel regions, wherein each pixel region includes: a first photoelectric conversion portion that performs photoelectric conversion according to a first wavelength of incident light; a first reading portion that reads charges converted by the first photoelectric conversion portion; a first storage unit that is formed between adjacent pixels and stores the charges read by the first reading portion; a second photoelectric conversion portion that performs photoelectric conversion according to a second wavelength different from the first wavelength; a second reading portion that reads charges converted by the second photoelectric conversion portion; and a second storage unit that is formed between adjacent pixels and stores the charges read by the second reading portion.

Abstract: At least one array of LEDs (e.g., in a flip chip configuration) is supported by a substrate having a light extraction surface overlaid with at least one lumiphoric material. Light segregation elements registered with gaps between LEDs are configured to reduce interaction between emissions of different LEDs and/or lumiphoric material regions to reduce scattering and/or optical crosstalk, thereby preserving pixel-like resolution of the resulting emissions. Light segregation elements may be formed by mechanical sawing or etching to define grooves or recesses in a substrate, and filling the grooves or recesses with light-reflective or light-absorptive material. Light segregation elements external to a substrate may be defined by photolithographic patterning and etching of a sacrificial material, and/or by 3D printing.

Abstract: An optical sensor includes pixels disposed in a substrate. A light collimating layer is disposed on the substrate and includes a transparent layer, a light-shielding layer, and transparent pillars. The transparent layer blanketly disposed on the substrate covers the pixels and the region between the pixels. The light-shielding layer is disposed on the transparent layer and between the transparent pillars. The transparent pillars penetrating through the light-shielding layer are correspondingly disposed on the pixels.

Abstract: An image sensor includes a substrate having a first surface and a second surface opposite to each other, a first floating diffusion region provided in the substrate and being adjacent to the first surface, a through-electrode provided in the substrate and electrically connected to the first floating diffusion region, an insulating structure, a bottom electrode, a photoelectric conversion layer, and a top electrode sequentially stacked on the second surface, a color filter buried in the insulating structure, and a top contact plug penetrating the insulating structure to connect the bottom electrode to the through-electrode.

Abstract: Structures and techniques introduced here enable the design and fabrication of photodetectors (PDs) and/or other electronic circuits using typical semiconductor device manufacturing technologies meanwhile reducing the adverse impacts on PDs' performance. Examples of the various structures and techniques introduced here include, but not limited to, a pre-PD homogeneous wafer bonding technique, a pre-PD heterogeneous wafer bonding technique, a post-PD wafer bonding technique, their combinations, and a number of mirror equipped PD structures. With the introduced structures and techniques, it is possible to implement PDs using typical direct growth material epitaxy technology while reducing the adverse impact of the defect layer at the material interface caused by lattice mismatch.

Abstract: Most semiconductor devices manufactured today, have uniform dopant concentration, either in the lateral or vertical device active (and isolation) regions. By grading the dopant concentration, the performance in various semiconductor devices can be significantly improved. Performance improvements can be obtained in application specific areas like increase in frequency of operation for digital logic, various power MOSFET and IGBT ICs, improvement in refresh time for DRAMs, decrease in programming time for nonvolatile memory, better visual quality including pixel resolution and color sensitivity for imaging ICs, better sensitivity for varactors in tunable filters, higher drive capabilities for iFETs, and a host of other applications.

Abstract: The present disclosure relates to a CMOS image sensor having a doped isolation structure separating a photodiode and a pixel device, and an associated method of formation. In some embodiments, the CMOS image sensor has a doped isolation structure separating a photodiode and a pixel device. The photodiode is arranged within the substrate away from a front-side of the substrate. A pixel device is disposed at the front-side of the substrate overlying the photodiode and is separated from the photodiode by the doped isolation structure. Comparing to previous image sensor designs, where an upper portion of the photodiode is commonly arranged at a top surface of a front-side of the substrate, now the photodiode is arranged away from the top surface and leaves more room for pixel devices. Thus, a larger pixel device can be arranged in the sensing pixel, and short channel effect and noise level can be improved.

Abstract: The disclosure provides an organic light-emitting display screen and a manufacturing method thereof. The organic light-emitting display screen includes a filter substrate, and further includes a color filter layer, a cathode layer, an organic light-emitting layer and an anode array sequentially formed on the filter substrate. The anode array includes a number of anode units spaced apart from each other, the color filter layer includes a number of filter units, and each of the anode units corresponds to each of the filter units.