Abstract: A semiconductor device structure and a method for manufacturing a semiconductor device. As a non-limiting example, various aspects of this disclosure provide a semiconductor device structure (e.g., a sensor device structure), and method for manufacturing thereof, that comprises a three-dimensional package structure free of wire bonds, through silicon vias, and/or flip-chip bonding.

Abstract: A packaged semiconductor device includes a substrate and a contact pad disposed on the semiconductor substrate. The packaged semiconductor device also includes a dielectric layer disposed over the contact pad, the dielectric layer including a first opening over the contact pad, and an insulator layer disposed over the dielectric layer, the insulator layer including a second opening over the contact pad. The packaged semiconductor device also includes a molding material disposed around the substrate, the dielectric layer, and the insulator layer and a wiring over the insulator layer and extending through the second opening, the wiring being electrically coupled to the contact pad.

Abstract: Aspects of this disclosure relate to a shielded radio frequency component with an integrated antenna. An antenna can be on a first side of a multi-layer substrate and a radio frequency component can be disposed on a second side of the multi-layer substrate such that a ground plane of the multi-layer substrate is positioned between the antenna and the radio frequency component. Conductive features can be disposed around the radio frequency component and electrically connected to the ground plane. The conductive features and the ground plane can provide shielding for the radio frequency component. In certain embodiments, the conductive features can include bumps, such as solder bumps and/or copper pillars.

Abstract: A wiring substrate includes a metal plate in which at least one wiring formation region is defined, a cavity formed in the wiring formation region, a concave part formed to have a frame shape at a peripheral edge portion of a bottom portion of the cavity, a first pad disposed at a central portion of the bottom portion of the cavity, a wiring portion connected to the first pad and disposed on and extended along the central portion of the bottom portion of the cavity, a side surface of the concave part and a bottom surface of the concave part, and a multi-layered wiring layer disposed at the central portion of the bottom portion of the cavity so as to cover the first pad and a part of the wiring portion. The multi-layered wiring layer has a second pad provided at an upper surface-side and connected to the wiring portion.

Abstract: A lead frame includes leads including inner leads and outer leads. Each of the leads includes an inner lead and an outer lead. A tie bar extends so as to cross connecting points of the inner leads and the outer leads. The leads and the tie bar include a first surface, a second surface, and side surfaces. A plating layer is provided on the inner leads, the outer leads and the tie bar. A first non-plating region is provided between an edge in the first surface of the inner lead and an edge of the plating layer provided on the first surface of the inner lead. A second non-plating region is provided between an edge of the first surface on the inner lead side of the tie bar and an edge on the inner lead side of the plating layer provided on the first surface of the tie bar.

Abstract: A mirror device has a plurality of organic EL elements and a plurality of metal mirror surface portions that are divided by banks made of a light-transmissive dielectric material and aligned on a substrate. Each of the organic EL elements has an organic layer that is formed between a light-transmissive electrode and a reflection electrode and contains a light-emitting layer. Each of the metal mirror surface portions and each of the organic EL elements or each group of the metal mirror surface portions and each group of the organic EL elements are alternately disposed.

Abstract: A heat-dissipating sheet includes a thermally-conductive resin sheet, an adhesive layer on an upper surface of the thermally-conductive resin sheet, and a thermally-conductive film on an upper surface of the adhesive layer. The thermally-conductive film has a higher thermal conductivity than the thermally-conductive resin sheet. The thermally-conductive resin sheet has a thin portion that is locally thin to form a recess in a lower surface of the thermally-conductive resin sheet. The recess may be an aperture passing through the thermally-conductive resin sheet. The adhesive layer is exposed from the aperture.

Abstract: The present invention provides a touch substrate, comprising a plurality of first electrodes extending along a first direction and a plurality of second electrodes extending along a second direction intersecting with the first direction, wherein the first electrode comprises a plurality of first electrode blocks, the second electrode comprises a plurality of second electrode blocks, adjacent two first electrode blocks are connected via at least one electrically conductive connecting piece, adjacent two second electrode blocks are formed integrally; a connecting piece comprises two contact portions and a connecting portion, the insulating layer at least covers each connecting piece and exceeds border of the connecting piece, the first electrode block is electrically connected to the contact portion via a via hole passing through the insulating layer, and a part of the contact portion is not exposed by the via hole.

Abstract: A semiconductor module (10A) according to one embodiment includes: vertical first and second transistor chips (12A, 12B), wherein a second main electrode pad (20) formed on a back surface of the first transistor chip is mounted on and connected to a first wiring pattern (74) on the substrate, a first control electrode pad (16) formed together with a first main electrode pad on a front surface of the first transistor chip is electrically connected to a second wiring pattern (76) on the substrate, third main electrode pad (18) formed together with a second control electrode pad on a front surface of the second transistor is mounted on and connected to the first wiring pattern, and the second control electrode pad (16) formed on a back surface of the second transistor chip is electrically connected to a third wiring pattern.

Abstract: An integrated package design for a package-on-package product is described that uses wire leads. Some embodiments pertain to a stacked package assembly that includes a first die having a front side and a back side, a die paddle attached to the back side of the first die, a plurality of wire leads, one end being connected to the front side of the die for connection to an external device, a mold compound encapsulating the first die and at least a portion of the die paddle, a land pad cut from the die paddle and supported by the mold compound, a second plurality of wire leads, one end of the wire leads being connected to the front side of the first die and the other end of the wire leads being connected to the land pad, a second die stacked over the die paddle and a third plurality of wire leads, one end being connected to the second die and the other end being connected to the land pad.

Abstract: A semiconductor module (10A) according to one embodiment includes a plurality of first and second transistor chips (hereinafter, first and second transistors) (12A, 12B) and a substrate (90). In each of the first and second transistors, first and second main electrode pads (18, 20) are each electrically connected together; the second main electrode pads of the first transistors are electrically connected to the first main electrode pads of the second transistors; control electrode pads of the first and second transistors are respectively connected to first and second control electrode wiring patterns (94, 98) on the substrate via first and second resistance parts (13A, 13B); and the first and second resistance parts respectively have a plurality of first and second resistance elements (72A, 72B) each connected to the corresponding control electrode pad, and first and second linking parts (74A, 74B) respectively linking the plurality of first and second resistance elements together.

Abstract: A method of manufacturing is provided that includes singulating a circuit board from a substrate of plural of the circuit boards, wherein the circuit board is shaped to have four corner hollows. The corner hollows may be various shapes.

Abstract: The invention discloses a package structure for better heat-dissipation or EMI performance. A first conductive element and a second conductive element are both disposed between the top lead frame and the bottom lead frame. The first terminal of the first conductive element is electrically connected to the bottom lead frame, and the second terminal of the first conductive element is electrically connected to the top lead frame. The third terminal of the second conductive element is electrically connected to the bottom lead frame, and the fourth terminal of the second conductive element is electrically connected to the top lead frame. In one embodiment, a heat dissipation device is disposed on the top lead frame. In one embodiment, the molding compound is provided such that the outer leads of the top lead frame are exposed outside the molding compound.

Abstract: A high frequency signal can be transmitted and received in a semiconductor device. In a QFP, an antenna (frame body) is supported by three suspension leads. The antenna is arranged to be symmetrical with respect to a first virtual diagonal line of a plan view of a sealing body. One of the three suspension leads is arranged on the first virtual diagonal line. With this configuration, discontinuities of a wave of a signal in the antenna can be reduced, as a result of which the high frequency signal of 5 Gbps class can be transmitted and received in the QFP.

Abstract: A semiconductor device includes an oscillator that oscillates at a specific frequency, a semiconductor integrated circuit that integrates a temperature sensor that detects a peripheral temperature, and a controller that is electrically connected to the oscillator and that corrects temperature dependent error in the oscillation frequency of the oscillator based on the temperature detected by the temperature sensor and a sealing member that integrally seals the oscillator and the semiconductor integrated circuit.

Abstract: A resin-encapsulated semiconductor device having a semiconductor chip which is prevented from being damaged. The resin-encapsulated semiconductor device (100) comprises a semiconductor chip (1) including a silicon substrate, a die pad (10) to which the semiconductor chip (1) is secured through a first solder layer (2), a resin-encapsulating layer (30) encapsulating the semiconductor chip (1), and lead terminals (21) electrically connected to the semiconductor chip (1) and including inner lead portion (21b) covered with the resin-encapsulating layer (30). The lead terminals (21) are made of copper or a copper alloy. The die pad (10) is made of 42 alloy or a cover alloy and has a thickness (about 0.125 mm) less than the thickness (about 0.15 mm) of the lead terminals (21).

Abstract: A device is disclosed which includes a first packaged integrated circuit device, a second packaged integrated circuit device positioned above the first packaged integrated circuit device and a plurality of planar conductive members conductively coupling the first and second packaged integrated circuit devices to one another. A method is also disclosed which includes conductively coupling a plurality of extensions on a leadframe to each of a pair of stacked packaged integrated circuit devices and cutting the leadframe to singulate the extensions from one another.

Abstract: A semiconductor device is disclosed. The semiconductor device has a semiconductor chip, an island having an upper surface to which the semiconductor chip is bonded, a lead disposed around the island, a bonding wire extended between the surface of the semiconductor chip and the upper surface of the lead, and a resin package sealing the semiconductor chip, the island, the lead, and the bonding wire, while the lower surface of the island and the lower surface of the lead are exposed on the rear surface of the resin package, and the lead is provided with a recess concaved from the lower surface side and opened on a side surface thereof.

Abstract: Semiconductor packages having lead frames include a lead frame, which supports a semiconductor chip and is electrically connected to the semiconductor chip by bonding wires, and a molding layer encapsulating the semiconductor chip. The lead frame includes first lead frames extending in a first direction and second lead frames extending in a second direction. The first lead frames may run across the semiconductor chip and support the semiconductor chip and the second lead frames may run across the bottom surface of the semiconductor chip.

Abstract: Electronic devices including a semiconductor device package, a substrate, and first and second solder joints. The semiconductor device package includes a die pad, leads and enhancement elements surrounding the die pad, a chip electrically connected to the leads, and a package body encapsulating the chip, portions of the leads, and portions of the enhancement elements, but leaving exposed at least a side surface of each enhancement element. Side surfaces of the enhancement elements and the package body are coplanar. The substrate includes first pads corresponding to the leads and second pads corresponding to the enhancement elements. The first solder joints are disposed between the first pads and the leads. The second solder joints are disposed between the second pads and the enhancement elements. The second solder joints contact side surfaces of the enhancement elements. The surface area of the second pads is greater than the surface area of the corresponding enhancement elements.

Abstract: An assembly for packaging one or more electronic devices in die form. The assembly includes substrates on opposite sides of the assembly, with lead frames between the electronic devices and the substrates. The substrates, lead frames, and electronic devices are sintered together using silver-based sintering paste between each layer. The material and thicknesses of the substrates and lead frames are selected so stress experienced by the electronic devices caused by changes in temperature of the assembly are balanced from the center of the assembly, thereby eliminating the need for balancing stresses at a substrate level by applying substantially matching metal layers to both sides of the substrates.

Abstract: A semiconductor device of the present invention comprises: an outer package; a first lead frame including a first relay lead, a first die pad with a power element mounted thereon, and a first external connection lead which has an end protruding from the outer package; and a second lead frame including a second relay lead, a second die pad with a control element mounted thereon, and a second external connection lead which has an end protruding from the outer package, wherein the first die pad and the second die pad or the first external connection lead and the second relay lead are joined to each other at a joint portion, and an end of the second relay lead extending from a joint portion with the first relay lead is located inside the outer package.

Abstract: A power overlay (POL) structure includes a POL sub-module. The POL sub-module includes a dielectric layer and a semiconductor device having a top surface attached to the dielectric layer. The top surface of the semiconductor device has at least one contact pad formed thereon. The POL sub-module also includes a metal interconnect structure that extends through the dielectric layer and is electrically coupled to the at least one contact pad of the semiconductor device. A conducting shim is coupled to a bottom surface of the semiconductor device and a first side of a thermal interface is coupled to the conducting shim. A heat sink is coupled to a second side of the electrically insulating thermal interface.

Abstract: A power semiconductor device comprises a lead frame unit, a control die, a first MOSFET die and a second MOSFET die, wherein the lead frame unit comprises at least a die paddle for mounting the first and second MOSFET dies, a first pin and a second pin for connecting to top electrodes of the first and second MOSFET dies, a first row of carrier pins and a second row of carrier pins disposed in-line with the first and second pins respectively for the control die to mount thereon.

Abstract: A device is disclosed which includes a first packaged integrated circuit device, a second packaged integrated circuit device positioned above the first packaged integrated circuit device and a plurality of planar conductive members conductively coupling the first and second packaged integrated circuit devices to one another. A method is also disclosed which includes conductively coupling a plurality of extensions on a leadframe to each of a pair of stacked packaged integrated circuit devices and cutting the leadframe to singulate the extensions from one another.

Abstract: In one embodiment, a semiconductor package includes a clip frame with a first clip having a first support structure, a first lever, and a first contact portion, which is disposed on a front side of the semiconductor package. The first support structure is adjacent an opposite back side of the semiconductor package. The first lever joins the first contact portion and the first support structure. A first die is disposed over the first support structure of the first clip. The first die has a first contact pad on the front side of the semiconductor package. An encapsulant material surrounds the first die and the first clip.

Abstract: A semiconductor system (100) has a first planar leadframe (101) with first leads (102) and pads (103) having attached electronic components (120), the first leadframe including a set of elongated leads (104) bent at an angle away from the plane of the first leadframe; a second planar leadframe (110) with second leads (112) and pads (113) having attached electronic components (114); the bent leads of the first leadframe conductively connected to the second leadframe, forming a conductively linked 3-dimensional network between components and leads in two planes; and packaging material (140) encapsulating the 3-dimensional network.

Abstract: The present invention specifies a leadframe for electronic components and a corresponding manufacturing process, in which the bonding islands are formed by welding individual, prefabricated segments of a bonding-capable material onto a stamped leadframe.

Abstract: A semiconductor device includes: an oscillator including external terminals disposed on a first face with a specific distance along a first direction; an integrated circuit including a first region formed with first electrode pads along one side, and a second region formed with second electrode pads on two opposing sides of the first region; a lead frame that includes terminals at a peripheral portion, and on which the oscillator and the integrated circuit are mounted such that the external terminals, the first and second electrode pads face in a substantially same direction and such that one side of the integrated circuit is substantially parallel to the first direction; a first bonding wire that connects one external terminal to one first electrode pad; a second bonding wire that connects one terminal of one lead frame to one second electrode pad; and a sealing member that seals all of the components.

Abstract: In accordance with an embodiment of the present invention, a semiconductor package includes a first lead frame having a first die paddle, and a second lead frame, which has a second die paddle and a plurality of leads. The second die paddle is disposed over the first die paddle. A semiconductor chip is disposed over the second die paddle. The semiconductor chip has a plurality of contact regions on a first side facing the second lead frame. The plurality of contact regions is coupled to the plurality of leads.

Abstract: In one embodiment, a method of forming a semiconductor package comprises providing a first die having contact regions on a top surface but not on an opposite bottom surface. A dielectric liner layer is deposited under the bottom surface of the first die. The first die is attached with the deposited dielectric liner layer to a die paddle of a substrate. A bond layer is disposed between the substrate and the dielectric liner layer.

Abstract: A semiconductor device includes: a lead frame; a semiconductor element held by the lead frame; a frame body which is formed on the lead frame to surround the semiconductor element, cover a side surface of the lead frame, and expose a bottom surface of the lead frame; and a protective resin filling a region surrounded by the frame body. The lead frame includes an uneven part formed in a section which is part of an upper surface of the lead frame, and is covered with the frame body.

Abstract: An optoisolator leadframe assembly includes: an emitter leadframe part including a first rail and a plurality of emitter leadframe units, each rail including two rows of emitter leadframes, each having a die-mounting pad; and a receiver leadframe part including a second rail and a plurality of receiver leadframe units, each including two rows of receiver leadframes, each having a die-mounting pad. The die-mounting pads of the emitter leadframes of each row of each of the emitter leadframe units are respectively aligned with and spaced apart from the die-mounting pads of the receiver leadframes of an adjacent row of an adjacent one of the receiver leadframe units. Each of the emitter and receiver leadframe parts is a single piece.

Abstract: A lead frame for assembling a semiconductor device has a die pad surrounded by lead fingers. Each of the lead fingers has a proximal end close to but spaced from an edge of the die pad and a distal end farther from the die pad. A semiconductor die is attached to a surface of the die pad. The die has die bonding pads on its upper surface that are electrically connected to the proximal ends of the lead fingers with bond wires. An encapsulation material covers the bond wires, semiconductor die and the proximal ends of the lead fingers. Prior to assembly, hot spots of the die are determined and the lead fingers closest to the hot spots are selected to project closer to the die than the other lead fingers. These longer lead fingers assist in dissipating the heat at the die hot spot.

Abstract: A resin-sealed semiconductor device includes a semiconductor chip including a silicon substrate; a die pad on which the semiconductor chip is secured via a solder layer; a sealing resin layer sealing the semiconductor chip; and lead terminals connected electrically with the semiconductor chip. One end portion of the lead terminals is covered by the sealing resin layer. The die pad and the lead terminals are formed of copper and a copper alloy, and the die pad is formed with a thickness larger than a thickness of the lead terminals, which is a thickness of 0.25 mm or more.

Abstract: A semiconductor package and a method for making the same are provided. In the method, a clip is used to conduct a lead frame and at least one chip. The clip has at least one second connection segment, at least one third connection segment, and at least one intermediate connection segment. The second connection segment is electrically connected to a second conduction region of the chip and a second pin of the lead frame respectively, and the third connection segment is electrically connected to a third conduction region of the chip and a third pin of the lead frame respectively. The intermediate connection segment connects the at least one second connection segment and the at least one third connection segment, and is removed in a subsequent process. Thereby, the present invention does not need to use any gold wire, which effectively saves the material cost and the processing time.

Abstract: A semiconductor device is formed by molding using a resin with a semiconductor element and one or two heat dissipating plates contained therein, said one or two heat dissipating plates being disposed to face one surface or both the surfaces of the semiconductor element. An intermediate layer is formed by spraying a metal powder to the semiconductor element and to one of or both of the heat dissipating plates using a cold spray method, and the semiconductor element and the heat dissipating plate are bonded together using a solder with the intermediate layer therebetween.

Abstract: A light emitting diode package and a method of fabricating the same. The package includes a light emitting diode chip having a first surface and a second surface opposing the first surface, a metal frame (or TAB tape) having leads connected to the light emitting diode chip, and a light-pervious encapsulant encapsulating the light emitting diode chip, wherein the second surface of the chip is exposed from the first light-pervious encapsulant. The metal frame (or TAB tape) connects the light emitting diode chip to an external circuit board. The LED package does not need wire-bonding process. A method of fabricating a light emitting diode package is also provided.

Abstract: A wiring device for a semiconductor device, a composite wiring device for a semiconductor device and a resin-sealed semiconductor device are provided, each of which is capable of mounting thereon a semiconductor chip smaller than conventional chips and being manufactured at lower cost. The wiring device connects an electrode on a semiconductor chip with an external wiring device, and has an insulating layer, a metal substrate and a copper wiring layer. The wiring device has a semiconductor chip support portion provided on the side of the copper wiring layer with respect to the insulating layer. The copper wiring layer includes a first terminal, a second terminal and a wiring portion. The first terminal is connected with the electrode. The second terminal is connected with the external wiring device. The wiring portion connects the first terminal with the second terminal.

Abstract: This invention discloses a through-silicon via (TSV) structure for providing an electrical path between a first-side surface and a second-side surface of a silicon chip, and a method for fabricating the structure. In one embodiment, the TSV structure comprises a via penetrated through the chip from the first-side surface to the second-side surface, providing a first end on the first-side surface and a second end on the second-side surface. A local isolation layer is deposited on the via's sidewall and on a portion of the first-side surface surrounding the first end. The TSV structure further comprises a plurality of substantially closely-packed microstructures arranged to form a substantially non-random pattern and fabricated on at least the portion of the first-side surface covered by the local isolation layer for promoting adhesion of the local isolation layer to the chip. A majority of the microstructures has a depth of at least 1 ?m.

Abstract: An electronic device assembly that includes a die and a substrate, and optionally a lead frame and a heat spreader. The die is characterized as an electronic device in die form, and has a polished die region. The substrate has a polished substrate region in direct contact with the polished die region. The polished die region and the polished substrate region have surface finishes effective to attach the die to the substrate by way of an atomic bond. The lead-frame has a polished lead-frame region, and the heat spreader has a polished heat spreader region. These polished regions may also be attached to the polished die region or the polished substrate region by way of an atomic bond.

Abstract: A semiconductor package includes a wiring board, a semiconductor chip mounted on the wiring board, and a mounting connection terminal electrically connecting a bonding pad of the semiconductor chip to a first connection pad of the wiring board. The mounting connection terminal includes a core portion and a connecting shell solder portion substantially surrounding the core portion. The core portion of the mounting connection terminal is not in contact with the bonding pad of the semiconductor chip.

Abstract: The semiconductor device according to the present invention includes a semiconductor chip, an island having an upper surface to which the semiconductor chip is bonded, a lead arranged around the island, a bonding wire extended between the surface of the semiconductor chip and the upper surface of the lead, and a resin package collectively sealing the semiconductor chip, the island, the lead and the bonding wire, while the lower surface of the island and the lower surface of the lead are exposed on the rear surface of the resin package, and the lead is provided with a recess concaved from the lower surface side and opened on a side surface thereof.

Abstract: A semiconductor device comprises an aluminum alloy lead-frame with a passivation layer covering an exposed portion of the aluminum alloy lead-frame. Since aluminum alloy is a low-cost material, and its hardness and flexibility are suitable for deformation process, such as punching, bending, molding and the like, aluminum alloy lead frame is suitable for mass production; furthermore, since its weight is much lower than copper or iron-nickel material, aluminum alloy lead frame is very convenient for the production of semiconductor devices.

Abstract: An LED package with an extended top electrode and an extended bottom electrode is formed from a first metal and a second metal. An LED is on an inner end of the first metal. An outer end of the first metal has been bent upward twice 90 degrees to form a top flat as an extended top electrode of the package. An outer end of the second metal has been bent downward twice 90 degrees to form a bottom flat as an extended bottom electrode of the package. The LED and a bonding wire may be encapsulated with glue.

Abstract: Methods and apparatuses for fabricating three-dimensional integrated circuits having through hole vias are provided. One aspect of the present invention is a method of gapfill for through hole vias for three-dimensional integrated circuits. The method comprises providing a semiconductor wafer having a plurality of holes for through hole vias and depositing a conformal metal layer to partially fill the holes to leave open voids. The method also includes purging the voids and cleaning the surface of the voids and using a dry deposition process to fill or close the voids. Another aspect of the present invention is an electronic device structure for a three-dimensional integrated circuit.

Abstract: A driver IC which is operated by a power supply system insulated from a control IC is mounted in the vicinity of a switching element on a first conductor pattern. A second conductor pattern connected to a source terminal or an emitter terminal of the switching element is electrically connected to a third conductor pattern on which the driver IC is mounted. A ground terminal of the driver IC is electrically connected to the third conductor pattern, and a drive terminal of the driver IC is electrically connected to a gate terminal or a base terminal of the switching element.

Abstract: A method of fabricating a leadframe-based semiconductor package, and a semiconductor package formed thereby, are disclosed. The semiconductor package includes a leadframe and one or more semiconductor die affixed to a die paddle of the leadframe. The leadframe is formed with a plurality of electrical terminals that get surface mounted to a host PCB. The leadframe further includes one or more extended leads, at least one of which includes an electrically conductive island which gets surface mounted to the host PCB with the electrical terminals. The islands effectively increase the number terminals within the package without adding footprint to the package.

Abstract: A power overlay (POL) packaging structure that incorporates a leadframe connection is disclosed. The a POL structure includes a POL sub-module having a dielectric layer, at least one semiconductor device attached to the dielectric layer and that includes a substrate composed of a semiconductor material and a plurality of connection pads formed on the substrate, and a metal interconnect structure electrically coupled to the plurality of connection pads of the at least one semiconductor device, with the metal interconnect structure extending through vias formed through the dielectric layer so as to be connected to the plurality of connection pads. The POL structure also includes a leadframe electrically coupled to the POL sub-module, with the leadframe comprising leads configured to make an interconnection to an external circuit structure.

Abstract: A embedded integrated circuit package is provided, the embedded integrated circuit package including: at least one chip arranged over a chip carrier, the at least one chip including a plurality of chip contact pads; encapsulation material formed over the chip carrier and at least partially surrounding the at least one chip; a plurality of electrical interconnects formed through the encapsulation material, wherein each electrical interconnect is electrically connected to a chip contact pad; and a structure formed between the electrical interconnects of the embedded integrated circuit package, wherein the structure increases the creepage resistance between the electrical interconnects.