Abstract: A semiconductor device has a sealing body formed of an insulating resin and a semiconductor chip positioned within the sealing body. A gate electrode and a source electrode are on a first main surface of the semiconductor chip and a back electrode (drain electrode) is on a second main surface thereof. An upper surface of a portion of a drain electrode plate that projects in a gull wing shape is exposed from the sealing body and a lower surface thereof is connected to the back electrode through an adhesive. A gate electrode plate projects in a gull wing shape on an opposite end side of the sealing body and is connected to the gate electrode within the sealing body. A source electrode plate projects in a gull wing shape on the opposite end side of the sealing body and is connected to the source electrode within the sealing body.

Abstract: A high current semiconductor power SOIC package is disclosed. The package includes a relatively thick lead frame formed of a single gauge material having a thickness greater than 8 mils, the lead frame having a plurality of leads and a first lead frame pad, the first lead frame pad including a die soldered thereto; a pair of lead bonding areas being disposed in a same plane of a top surface of the die; large diameter bonding wires connecting the die to the plurality of leads, the bonding wires being aluminum; and a resin body encapsulating the die, bonding wires and at least a portion of the lead frame.

Abstract: A stack-type semiconductor device according to the present invention includes a circuit board with bonding pads; a first semiconductor chip which includes first electrode pads and is mounted on the circuit board; a second semiconductor chip which includes second electrode pads and is mounted on the first semiconductor chip; a plurality of bonding wires sequentially connecting the bonding pads, the first electrodes and the second electrodes as a whole; and a sealing resin for sealing the first semiconductor chip, the second semiconductor chip and the bonding wires.

Abstract: A surface of a lead frame of a semiconductor device package, on which a semiconductor chip is mounted, is formed to have a mesh structure, whereby a connecting area between the lead frame and a molding resin can be increased to have strong bonding. Further, only filler particles having a small diameter than the mesh are taken into the vicinity of the lead frame, suppressing the effect of stresses to reduce deformation of the lead frame.

Abstract: An integrated circuit package system comprising: providing a module lead array; attaching a module integrated circuit adjacent the module lead array; attaching a module substrate over the module integrated circuit; and applying a module encapsulant over the module integrated circuit wherein the module lead array and the module substrate are partially exposed.

Abstract: A semiconductor package includes a leadframe having first and second level downset lead extensions, a quad flat nonleaded package (QFN) attached to the first level downset lead extension, and a flip chip die attached to the second level downset lead extension. Another embodiment of a semiconductor package includes a leadframe having a lead, a first quad flat nonleaded package (QFN) connected to the lead, and a second quad flat nonleaded package invertly connected to a top surface of the first quad flat nonleaded package, wherein the second quad flat nonleaded package is wirebonded to the lead. A third embodiment of a semiconductor package includes a leadframe having a lead with a first level downset lead extension, a quad flat nonleaded package (QFN) connected to the first level downset lead extension, and a first wirebondable die attached to a top or bottom surface of the quad flat nonleaded package.

Abstract: An improved leadframe panel suitable for use in packaging IC dice is described. The described leadframe panel is configured such that the amount of leadframe material that is removed during singulation of the leadframe panel is reduced.

Abstract: An integrated circuit current sensor includes a lead frame having at least two leads coupled to provide a current conductor portion, and substrate having a first surface in which is disposed one or more magnetic field transducers, with the first surface being proximate the current conductor portion and a second surface distal from the current conductor portion. In one particular embodiment, the substrate is disposed having the first surface of the substrate above the current conductor portion and the second surface of the substrate above the first surface. In this particular embodiment, the substrate is oriented upside-down in the integrated circuit relative to a conventional orientation. With this arrangement, a current sensor is provided for which the one or more magnetic field transducers are very close to the current conductor portion, resulting in a current sensor having improved sensitivity.

Abstract: A semiconductor device which includes: a semiconductor chip with plural pads; a tab connected with the semiconductor chip; bus bars which are located outside of the semiconductor chip and connected with the tab; a sealing body which resin-seals the semiconductor chip; plural leads arranged in a line around the semiconductor chip; plural first wires which connect pads of the semiconductor chip and the leads; and plural second wires which connect specific pads of the semiconductor chip and the bus bars. Since the sealing body has a continuous portion which continues from a side surface of the semiconductor chip to its back surface to a side surface of the tab, the degree of adhesion among the semiconductor chip, the tab and the sealing body is increased. This prevents peeling between the tab and the sealing body during a high-temperature process and thus improves the quality of the semiconductor device (QFN).

Abstract: Integrated circuit (IC) packages are described. Each IC package includes a die having an exposed metallic layer deposited on its back surface. Solder joints are arranged to physically and electrically connect I/O pads on the active surface of the die with associated leads. A molding material encapsulates portions of the die, leadframe and solder joint connections while leaving the metallic layer exposed and uncovered by molding material.

Abstract: A semiconductor package includes a leadframe having first and second level downset lead extensions, a quad flat nonleaded package (QFN) attached to the first level downset lead extension, and a flip chip die attached to the second level downset lead extension. Another embodiment of a semiconductor package includes a leadframe having a lead, a first quad flat nonleaded package (QFN) connected to the lead, and a second quad flat nonleaded package invertly connected to a top surface of the first quad flat nonleaded package, wherein the second quad flat nonleaded package is wirebonded to the lead. A third embodiment of a semiconductor package includes a leadframe having a lead with a first level downset lead extension, a quad flat nonleaded package (QFN) connected to the first level downset lead extension, and a first wirebondable die attached to a top or bottom surface of the quad flat nonleaded package.

Abstract: An improved arrangement and process for packaging integrated circuits are described. More particularly, a universal lamination tool is described that functions to secure an adhesive film to a lead frame. The lamination tool of the present invention uses compressed gas to press the lead frame against the adhesive film. In this manner, the lamination tool itself does not physically press on the lead frame thereby substantially reducing the likelihood of damage to the bonding wires or other delicate components during this stage of the encapsulation process. Moreover, such a lamination tool is not package specific making it applicable for a wide variety of package configurations and lead frame sizes.

Abstract: To actualize a reduction in the on-resistance of a small surface mounted package having a power MOSFET sealed therein. A silicon chip is mounted on a die pad portion integrated with leads configuring a drain lead. The silicon chip has, on the main surface thereof, a source pad and a gate pad. The backside of the silicon chip configures a drain of a power MOSFET and bonded to the upper surface of a die pad portion via an Ag paste. A lead configuring a source lead is electrically coupled to the source pad via an Al ribbon, while a lead configuring a gate lead is electrically coupled to the gate pad via an Au wire.

Abstract: A manufacturing process of a leadframe-based BGA package is disclosed. A leadless leadframe with an upper layer and a lower layer is provided for the package. The upper layer includes a plurality of ball pads, and the lower layer includes a plurality of sacrificial pads aligning and connecting with the ball pads. A plurality of leads are formed in either the upper layer or the lower layer to interconnect the ball pads or the sacrificial pads. An encapsulant is formed to embed the ball pads after chip attachment and electrical connections. During manufacturing process, a half-etching process is performed after encapsulation to remove the sacrificial pads to make the ball pads electrically isolated and exposed from the encapsulant for solder ball placement where the soldering areas of the ball pads are defined without the need of solder mask(s) to solve the problem of solder bleeding of the solder balls on the leads or the undesired spots during reflow. Moreover, mold flash can easily be detected and removed.

Abstract: Provided is a semiconductor device package. The semiconductor device package includes: stacked semiconductor chips having bonding pads; a PCB (printed circuit board) mounting the stacked semiconductor chips thereon, and including bonding electrodes that correspond to the bonding pads; and interposers respectively covering the stacked semiconductor chips and interposed between the stacked semiconductor chips. The interposers comprise wire patterns connecting the bonding pads with the bonding electrodes, and connecting the interposers to each other.

Abstract: Methods, systems, and apparatuses for integrated circuit packages and lead frames are provided. A quad flat no-lead (QFN) package includes a plurality of peripherally positioned pins, a die-attach paddle, an integrated circuit die, and an encapsulating material. The die-attach paddle is positioned within a periphery formed by the pins. The die is attached to the die-attach paddle. The encapsulating material encapsulates the die on the die-attach paddle, encapsulates bond wires connected between the die and the pins, and fills a space between the pins and the die-attach paddle. One or more of the pins are extended. An extended pin may be elongated, L shaped, T shaped, or “wishbone” shaped. The extended pin(s) enable wire bonding of additional ground, power, and I/O (input/output) pads of the die in a manner that does not significantly increase QFN package cost.

Abstract: A semiconductor component has a leadframe, a semiconductor die and an encapsulation element. The leadframe has a die pad having a first side, at least one lead spaced at a distance from the die pad and at least one support bar remnant protruding from the die pad, each having a distal end. The encapsulation element has plastic and encapsulates at least the semiconductor die and a portion of the first side of the die pad. At least one support bar remnant is positioned within the encapsulation element and the distal end of the support bar remnant is encapsulated by at least one dielectric compound.

Abstract: An integrated circuit package system comprised by providing a leadframe including leads configured to provide electrical contact between an integrated circuit chip and an external electrical source. Configuring the leads to include outer leads, down set transitional leads, and down set inner leads. Connecting the integrated circuit chip electrically to the down set inner leads. Depositing an encapsulating material to prevent exposure of the down set inner leads.

Abstract: A method of packaging an integrated circuit die having a plurality of I/O pads is described. The method includes positioning the die within a die attach area of a first leadframe that includes a plurality of first leads. The method also includes positioning a second leadframe that includes a plurality of second leads over the first leadframe. The method further includes electrically connecting each of the second leads to both an associated I/O pad and a first lead.

Abstract: Packaged microelectronic devices and methods for manufacturing packaged microelectronic devices are disclosed herein. In one embodiment, a packaged microelectronic device can include a support member and at least one die in a stacked configuration attached to the support member. The support member may include a leadframe disposed longitudinally between first and second ends and latitudinally between first and second sides. The leadframe includes a lead extending between the first end and the first side.

Abstract: A post-mold plated semiconductor device has an aluminum leadframe (105) with a structure including a chip mount pad and a plurality of lead segments without cantilevered lead portions. A semiconductor chip (210) is attached to the chip mount pad, and conductive connections (212) span from the chip to the aluminum of the lead segments. Polymeric encapsulation material (220), such as a molding compound, covers the chip, the connections, and portions of the aluminum lead segments without leaving cantilevered segment portions. Preferably by electroless plating, a zinc layer (301) and a nickel layer (302) are on those portions of the lead segments, which are not covered by the encapsulation material including the aluminum segment surfaces (at 203b) formed by the device singulation step, and a layer (303) of noble metal, preferably palladium, is on the nickel layer.

Abstract: In one embodiment, an integrated circuit package includes a lead frame with a die paddle and several leads. Portions of the lead frame not having an external electrical connection may be thinned such that they may be encapsulated by an electrically insulating packaging material on the back of the lead frame. Portions of the lead frame having external electrical connections may have a thickness such that they are exposed through the packaging material. The lead frame may be covered by an electrically insulating cover to protect components on the lead frame from erroneous electrical contact or electrostatic discharge (ESD) damage.

Abstract: To prevent a semiconductor device which can be made to be small even though a big-sized chip is used and in which a MOSFET having a low on-resistance can be formed, a semiconductor device according to the invention includes a resin package; at least two main leads that are integrated within the resin package so as to constitute a chip mounting portion; a semiconductor chip mounted on the chip mounting portion; and first and second surface leads each electrically connected to an electrode formed on a surface of the semiconductor chip. The main leads and the first and second surface leads protrude outward along a bottom surface of the resin package, respectively.

Abstract: A semiconductor device includes: a semiconductor element; a die pad with the semiconductor element mounted thereon; a plurality of electrode terminals each having a connecting portion electrically connected with the semiconductor element; and a sealing resin for sealing the semiconductor element, the die pad and the electrode terminals so that a surface of each electrode terminal on an opposite side from a surface having the connecting portion is exposed as an external terminal surface. A recess having a planar shape of a circle is formed on the surface of each electrode terminal with the connecting portion, and the recess is arranged between an end portion of the electrode terminal exposed from an outer edge side face of the sealing resin and the connecting portion. While a function of the configuration for suppressing the peeling between the electrode terminal and the sealing resin can be maintained by mitigating an external force applied to the electrode terminal, the semiconductor device can be downsized.

Abstract: A structure of a lead-frame matrix of photoelectron devices is provided. The lead-frame matrix is used to fabricate a first lead-frame array and a second lead-frame array. In the structure of the lead-frame matrix of the photoelectron devices, pins of the first lead-frame array and pins of the second lead-frame array are alternatively inserted.

Abstract: A structure of a lead-frame matrix of photoelectron devices is provided. The lead-frame matrix is used to fabricate a first lead-frame array and a second lead-frame array. In the structure of the lead-frame matrix of the photoelectron devices, pins of the first lead-frame array and pins of the second lead-frame array are alternatively inserted.

Abstract: A magnetic sensor is constituted using magnetic sensor chips mounted on stages supported by interconnecting members and a frame having leads in a lead frame. Herein, the stages are inclined upon plastic deformation of the interconnecting members. When the frame is held in a metal mold and the stages are pressed, the interconnecting members are elastically deformed, so that the magnetic sensor chips are bonded onto the stages placed substantially in the same plane and are then wired with the leads. Thereafter, the stages are released from pressure, so that the interconnecting members are restored from the elastically deformed states thereof. When the magnetic sensor chips are combined together to realize three sensing directions, it is possible to accurately measure three-dimensional bearings of magnetism, and the magnetic sensor can be reduced in dimensions and manufactured with a reduced cost therefore.

Abstract: A manufacturing method of a semiconductor device including preparing a lead frame having a die pad, leads arranged around the die pad and a silver plating layer formed over a first portion of each of the leads, mounting a semiconductor chip over a main surface of the die pad with a rear surface of the chip fixed to the main surface of the die pad, electrically connecting electrodes of the chip with the leads through wires, forming a molding resin sealing the die pad, the first portion, the semiconductor chip, and the wires, and forming a lead-free solder plating layer over a second portion of each of the leads exposed from the molding resin. An area of the die pad is smaller than an area of the chip, and a part of the molding resin contacts with the rear surface of the chip exposed from the die pad.

Abstract: Semiconductor equipment includes: a first lead frame having a first semiconductor device; a second lead frame having a second semiconductor device; a thermal resistor for preventing heat transfer from the first lead frame to the second lead frame; and a temperature sensitive device for detecting operational temperature of the first semiconductor device. The first lead frame is separated from the second lead frame by a predetermined distance. The thermal resistor is disposed in a clearance between the first lead frame and the second lead frame. The second semiconductor device controls to restrict operation of the first semiconductor device when the operational temperature of the first semiconductor device is higher than a predetermined temperature.

Abstract: A semiconductor die package is disclosed. In one embodiment, the die package includes a semiconductor die including a first surface and a second surface, and a leadframe structure having a die attach region and a plurality of leads extending away from the die attach region. The die attach region includes one or more apertures. A molding material is around at least portions of the die attach region of the leadframe structure and the semiconductor die. The molding material is also within the one or more apertures.

Abstract: Apparatus and methods are provided for integrally packaging semiconductor IC (integrated circuit) chips with antennas having one or more radiating elements and tuning elements that are formed from package lead wires that are appropriated shaped and arranged to form antenna structures for millimeter wave applications.

Abstract: A semiconductor device assembly includes a semiconductor device and a lead frame having lead fingers for connection to the semiconductor device. The lead frame may include floating no connect (NC) lead fingers with inner portions of the floating NC lead fingers electrically isolated from the semiconductor device and the associated outer portion of the floating NC lead fingers. Floating NC lead fingers may separate lead fingers prone to causing induction noise from lead fingers subject to induction effects. The floating NC lead fingers may also allow the semiconductor device to be securely adhered to the lead fingers with no air pockets therebetween. A method of forming a semiconductor device assembly is also provided.

Abstract: A surface-mountable light emitting diode structural element in which an optoelectronic chip is attached to a chip carrier part of a lead frame, is described. The lead frame has a connection part disposed at a distance from the chip carrier part, and which is electrically conductively connected with an electrical contact of the optoelectronic chip. The chip carrier part presents a number of external connections for improved conduction of heat away from the chip. The external connections project from a casing and at a distance from each other.

Abstract: An integrated circuit (IC) package, such as a Quad Flat Pack (QFP), has at least one lead with a tip that extends substantially perpendicular to the ends of two or more bondwires, so that there is room for more than one bondwire to be attached to it along its length. Thus, bondwires leading from die bondpads that are not adjacent to one another can be efficiently connected to the same lead in a bus-like manner.

Abstract: The present invention can supply power for each circuit section by separating and connecting bus-bar (21d) for each circuit section inside the semiconductor chip (22), and, in addition, can increase the number of pads (22a) for power supply or can use the lead (21a) conventionally used for power supply for signals by further making the best of the characteristics that enable the connection to bus-bar (21d) irrespective of the inner lead (21b) pitch, by making the pitch of the pad (22a) smaller than the pitch of the inner lead (21b), or by forming the pad (22a) in a zigzag arrangement.

Abstract: A power semiconductor module having surface-mountable flat external contact areas and a method for producing the same is disclosed. In one embodiment, the top sides of the external contacts form an inner housing plane, on which at least one power semiconductor chip is fixed by its rear side on a drain external contact. An insulation layer covers the top side over the edge sides of the semiconductor chip as far as the inner housing plane whilst leaving free the source and gate contact areas on the top side of the semiconductor chip and also whilst partly leaving free the top sides of the corresponding external contacts. Arranged on the insulation layer is a connecting conductive layer between the source contact areas on the top side of the semiconductor chip and the top sides of the source external contacts, and also a gate connecting layer from the gate contact areas to the top side of the gate external contact.

Abstract: An integrated circuit current sensor includes a lead frame having at least two leads coupled to provide a current conductor portion, and a substrate having a first surface in which is disposed one or more magnetic field sensing elements, with the first surface being proximate to the current conductor portion and a second surface distal from the current conductor portion. In one particular embodiment, the substrate is disposed having the first surface of the substrate above the current conductor portion and the second surface of the substrate above the first surface. In this particular embodiment, the substrate is oriented upside-down in the integrated circuit in a flip-chap arrangement. The lead frame also includes a shunt conductor portion formed as a coupling of the at least two leads.

Abstract: An integrated circuit package system includes: fabricating a lead frame including: providing inner leads having an inner lead pitch of progressive length, forming a lead shoulder, on the inner leads, having a shoulder height of a progressive height, and forming outer leads coupled to the lead shoulder and the inner leads; mounting an integrated circuit die on the lead frame; and molding a package body on the lead frame and the integrated circuit die.

Abstract: A metal backing tab supports the semiconductor device and has an extending portion extending from an edge. A top leg, a middle leg and a bottom leg are all coupled to the semiconductor device and each has a lead terminal portion extending beyond the boundary of said molded housing. The top leg has a first top leg section that protrudes directly away from the molded housing, a second top leg section that bends toward a direction of a face of the molded housing, and a third top leg section bending downward. The middle leg has a first middle leg section connected to the package that protrudes away from the molded housing, and a middle leg downward section that points downward. The bottom leg has a first bottom leg section that protrudes away from the molded housing face, a second bottom leg section that points away from the molded housing face, and third bottom leg section that points downward.

Abstract: A semiconductor die featuring vertical rows of bonding pad structures is disclosed. The rows of bonding pad structures are located vertically in the Y direction, or traversing the width of the semiconductor die. A vertical row of bonding pad structures is located on each side of the semiconductor die while a third vertical row of bonding pad structures is located in the center of the semiconductor die. A first set of wire bonds connect each bonding pad structure located on the sides of the semiconductor die to a conductive lead structure located on a ceramic package. A second set of wire bonds connect each bonding pad structure located in the center of the semiconductor die to a lead on chip (LOC) structure located on the semiconductor die.

Abstract: An assembly structure for an electronic integrated power circuit, which circuit is fabricated on a semiconductor die having a plurality of contact pads associated with said integrated circuit and connected electrically to respective leads of said structure, wherein a shield element is coupled thermally to said die by a layer of an adhesive material.

Abstract: A lead frame structure is provided, which includes a die pad having a first mounting portion and a second mounting portion separated from the first mounting portion by a gap. The first and second mounting portions are formed with corresponding blocking surfaces bordering the gap, so as to allow a flow rate of an encapsulating resin flowing through the gap during a molding process to be reduced by the blocking surfaces, such that different portions of the encapsulating resin respectively flowing above, in and below the die pad can have substantially the same flow rate, thereby preventing bonding wires from being deformed to cause short circuit and avoiding formation of voids. A semiconductor package with the lead frame structure is also provided.

Abstract: In a semiconductor package including at least one plate-like mount, a semiconductor chip has at least one electrode formed on a top surface thereof, and is mounted on the plate-like mount such that a bottom surface of the semiconductor chip is in contact with the plate-like mount. The semiconductor package also includes at least one lead element having an outer portion arranged to be flush with the plate-like mount, and an inner portion deformed and shaped to overhang the semiconductor chip such that an inner end of the lead element is spaced apart from the top surface of the semiconductor chip. The semiconductor package further includes a bonding-wire element bonded at ends thereof to the electrode of the semiconductor chip and the inner end of the lead element, an enveloper sealing and encapsulating the plate-like mount, the semiconductor chip, the inner portion of the lead element, and the bonding-wire element.

Abstract: The invention relates to a substrate with slot. The substrate of the invention comprises an active surface and a plurality of metal plates. The metal plates are formed on the active surface. Each metal plate has a first surface and a second surface. The first surface is connected to the active surface. At least one metal plate has at least one slot formed on the second surface. Therefore, according to the substrate with slot of the invention, a resin for connecting a chip and the metal plates can entirely seal sides and corners of the chip so as to prevent water or dust from entering the chip and protect the chip.

Abstract: A chip package structure including a chip, a lead frame, first bonding wires and second bonding wires is provided. The chip has an active surface, first bonding pads and second bonding pads, wherein the first bonding pads and the second bonding pads are disposed on the active surface. The chip is fixed below the lead frame, and the lead frame includes inner leads and bus bars. The inner leads and the bus bars are disposed above the active surface of the chip, and the bus bars are located between the inner leads and the corresponding first bonding pads. The first bonding wires respectively connect the first bonding pads and the bus bars. The second bonding wires respectively connect the bus bars and a part of the inner leads. The third bonding wires respectively connect the second bonding pads and the other of the inner leads.

Abstract: The present invention provides a flexible substrate for a package of a die which has an active surface and a plurality of first bond pads arranged in a form of a row and formed on the active surface. The flexible substrate includes a flexible insulating film and a plurality of first leads formed on the flexible insulating film. Each of the first leads corresponds to one of the first bond pads and has a respective first body portion, a respective first bond portion and a respective first extension portion. For each of the first leads, the width of the first bond portion is larger than those of the first body portion and the first extension portion.

Abstract: This invention provides a high frequency power module which is incorporated into a mobile phone and which incorporates high frequency portion analogue signal processing ICs including low noise amplifiers which amplify an extremely weak signal therein. A semiconductor device includes a sealing body which is made of insulation resin, a plurality of leads which are provided inside and outside the sealing body, a tab which is provided inside the sealing body and has a semiconductor element fixing region and a wire connection region on a main surface thereof, a semiconductor element which is fixed to the semiconductor element fixing region and includes electrode terminals on an exposed main surface, conductive wires which connect electrode terminals of the semiconductor element and the leads, and conductive wires which connect electrode terminals of the semiconductor element and the wire connecting region of the tab.

Abstract: A high current semiconductor power SOIC package is disclosed. The package includes a relatively thick lead frame formed of a single gauge material having a thickness greater than 8 mils, the lead frame having a plurality of leads and a first lead frame pad, the first lead frame pad including a die soldered thereto; a pair of lead bonding areas being disposed in a same plane of a top surface of the die; large diameter bonding wires connecting the die to the plurality of leads, the bonding wires being aluminum; and a resin body encapsulating the die, bonding wires and at least a portion of the lead frame.

Abstract: A packaging structure and method for a light emitting diode is provided. The present invention uses flip-chip and eutectic bonding technology to attach a LED to a thermal and electrical conducting substrate. The flip-chip packaging structure comprises a thermal and electrical conducting substrate having an insulating layer formed in an appropriate area on the top surface of the substrate and a bonding pad formed on top of the insulating layer; and a LED reversed in a flip-chip style and joined to the substrate by eutectic bonding. A first electrode of the LED is eutectically bonded to an appropriate area on the top surface of the substrate via a eutectic layer, while a second electrode of the LED is electrically connected to the bonding pad.

Abstract: This invention is directed to preventing deformation, breakage, and the like of leads in a semiconductor device, reducing the fraction of defects, and making the semiconductor device smaller and thinner. In order to accomplish these objects, in a carrier including a base having a device hole and a plurality of leads for bonding a chip, the leads are provided with thin heat-resistant films.