Abstract: A semiconductor device package is formed with a lead frame including a plurality of lead members positioned in an array, and a semiconductor die is secured to the lead frame. At least one pair of bus bars is connected to the lead frame and positioned over the semiconductor die, with the bus bars including a plurality of inner-digitized bond fingers. The inner-digitized bond fingers are formed from a series of alternating projections and recesses on each bus bar. A plurality of bond wires electrically couples the lead members to the semiconductor die. Other bond wires electrically couple the inner-digitized bond fingers of the bus bars to the semiconductor die. The bond wires attached to the inner-digitized bond fingers have a substantially uniform loop height and length, providing for easier manufacture and inspection of the semiconductor device package.

Abstract: A plurality of leads are arrayed around an island (1) to which a semiconductor chip (3) is bonded. A plurality of first wires (4) interconnects each electrode terminal of the semiconductor chip (3) and each of the plurality of leads (2), while a second wire (4b) electrically connects a ground terminal of the semiconductor chip (3) with the island (1). This island (1) is so formed that a slit (1c) may be interposed between a wire bonding portion (1b) and a die pad portion (1a). In this configuration, the island and the leads are covered by a resin package (6) in such a manner that their back faces may be exposed from this package. As a result, even in a QFN type resin-packaged semiconductor device in which the back faces of the island and the leads are exposed for direct soldering at the time of mounting, the wire bonded to the island can be prevented from being disconnected or cut off, thus making that resin-packaged semiconductor device more stable in quality.

Abstract: The mounting reliability of a QFN (Quad Flat Non-leaded package) having a large number of pins is improved, and also the manufacturing cost of the QFN having a large number of pins is reduced. A die pad, on which a semiconductor die is mounted, is arranged at the center of a plastic package constituting a package of the QFN. A plurality of leads are arranged around the die pad so as to surround the die pad. Lead tips on one side near the semiconductor die are electrically connected to bonding pads on a main surface of the semiconductor die via gold wires, and lead tips on the other side terminate at a side surface of the plastic package. On a rear surface of the plastic package, external connection terminals formed by pressing and bending the respective parts of the plurality of leads protrude to the outside, and a solder layer is formed on each surface of the terminals.

Abstract: Conventional configuration of a lead frame, particularly a lead frame in a Lead-on-Chip package, is substituted by one having inward ends of leads thereof arranged in unprecedented ways, resulting in bigger gap between any two adjacent inward ends of inner leads, leading to bigger Inner Lead Pitch of a lead frame in which the space available is inherently limited. It is by the new configuration that an IC packaging process can be immunized against the difficulty resulting from too small Inner Lead Pitch of a lead frame, and the bottle neck in the process of packaging an IC subject to the tendency of minimizing the size of an IC can thus be overcome.

Abstract: A semiconductor device is formed from a die and a lead frame having one or more bus bars. Portions of the bus bars are overlain with an electrically insulative material while leaving bonding areas unobstructed, whereby bond wires which span the bus bar(s) may be bonded with a shorter wire and a lower loop, without the danger of shorting to the bus bar(s). The incidence of harmful wire sweep in the encapsulation step is also reduced.

Abstract: A method of manufacturing a semiconductor device includes a step of providing a semiconductor chip having electrodes to face a tape having a plurality of first holes, a support member surrounded by the first holes, and leads extending across the first holes to the support member; a step of bonding the electrodes to the leads; a step of cutting the leads in the first holes; and a step of bending the leads to go around a lateral portion of the support member.

Abstract: A method of mounting a component on a substrate includes applying a conductive adhesive on a contact pad joined to a substrate, aligning a component with the substrate such that at least one lead of the component is juxtaposed with the conductive adhesive, performing a partial cure of the conductive adhesive, testing performance of the component, and performing a full cure of the conductive adhesive. Another method includes the additional steps of applying a tacky film to the substrate and juxtaposing the component with the tacky film. When the testing in either embodiment shows a defective or misaligned component, the component may be replaced or repositioned by cold separation of the at least one component lead from the partially cured conductive adhesive. Optionally, additional conductive adhesive may be applied, when needed, before replacement or repositioning of a component.

Abstract: In the method, the following are placed in succession on a substrate: at least one conductive layer and at least one semiconductor power circuit, and metal connection tabs are fitted to the face of the semiconductor circuit facing away from the conductive layer by metallizing a metal film. Thereafter, at least one solder element is placed on each film obtained in this way, at least one conductive member is applied to the or each solder element on its side facing away from the metal film, and the or each solder element is caused to melt so as to secure the or each conductive member to the or each metal film.

Abstract: The present invention provides a semiconductor device comprising a frame including a die pad and a lead portion, a semiconductor element, a wire including one end connected to the semiconductor element and another end connected to the lead portion, at least one first bonding portion formed of a solder material and bonding a part of the die pad to a part of the semiconductor element, and at least one second bonding portion formed of a thermosetting resin and bonding another part of the die pad to another part of the semiconductor element.

Abstract: Two dice may be provided within a single package so that one pin and associated leadfinger may be coupled to bond pads on different dice. This may mean that two different bond pads on different dice are coupled, for example by wirebonding, to the same leadfinger. An adhesive tape may be secured so as to bridge the two dice. One or more conductive traces are formed on the upper side of the adhesive tape and adhesive is provided on the other side to secure the tape to the two dice. As a result, wire bonds may be made from a pad on one die to a trace and then from the opposite side of the trace to a leadfinger. At the same time, a wire bond may be made from a pad on the other die to the same leadfinger. In another embodiment, an adhesive tape with a conductive trace on it may be used as a wire bond bridge to join spaced bond pads on a single chip.

Abstract: A semiconductor device includes a semiconductor element having an electrode formation surface on which an electrode terminal and a re-wiring portion are formed. The re-wiring portion is electrically connected to the electrode terminal. An external terminal made of wire has a base end connected to the re-wiring portion and a distal end extending therefrom. An electrically insulating resin covers the electrode formation surface in such a manner that at least the distal end of the external terminal is exposed outside the insulating resin. During a fabricating process, the electrode formation surface is coated with an electrically insulating resin and then a part of the electrically insulating resin is removed from the distal end of the external connecting terminal to expose the same outside the insulating resin.

Abstract: A LOC type semiconductor device comprises a semiconductor chip having a main surface in which semiconductor elements and a plurality of bonding pads are formed, and a back surface opposite the main surface; a plurality of leads each having an inner part and an outer part, and including a plurality of first leads having inner end portions extended on the main surface of the semiconductor chip and a plurality of second leads having inner end portions terminating near the semiconductor chip; bonding wires electrically connecting the bonding pads to bonding portions of the inner parts of the first and the second leads; and a sealing member sealing the semiconductor chip therein. A first bending portion is formed in the inner part of each second lead to prevent the sealing member from transformation by forming the sealing member in satisfactory resin balance between an upper portion and a lower portion of the sealing member.

Abstract: An integrated circuit having a housing accommodating the integrated circuit. It being possible for the integrated circuit to be put optionally into one of a plurality of different operating modes by virtue of the selective provision of electrical connections between specific contact points constructed on the integrated circuit. The device described is distinguished by the fact that all the contact points of the integrated circuit which are provided for the operation and configuration of the integrated circuit are connected to terminal elements of the housing with which external contact can be made.

Abstract: Efficient methods are disclosed for fabricating metal plated spring structures in which the metal is plated onto the spring structure after release. A conductive release layer is deposited on a substrate and a spring metal layer is then formed thereon. A first mask is then used to form a spring metal finger, but etching is stopped before the release layer is entirely removed. A second mask is then deposited that defines a release window used to remove a portion of the release layer and release a free end of the spring metal finger. The second mask is also used to plate at least some portions of the free end of the finger and selected structures exposed through the second mask. Remaining portions of the release layer are utilized as electrodes during electroplating. The resulting spring structure includes plated metal on both upper and lower surfaces of the finger.

Abstract: A plurality of patterned lead wires equally spaced are arranged on both side ends of a lead substrate, a plurality of pads equally spaced are arranged on both side ends of a semiconductor chip, and the semiconductor chip is mounted on the lead substrate so as to connect the pads of each side end of the semiconductor chip with the patterned lead wires of the corresponding side end of the lead substrate. Widths of the patterned lead wires are smaller than a width of an open space between each pair of pads adjacent to each other in the semiconductor chip, and widths of the pads of the semiconductor chip are larger than a width of an open space between each pair of patterned lead wires adjacent to each other.

Abstract: Metal films (for instance, gold films or palladium films) to constitute bumps are formed on a metal base by electrolytic plating. Then, a circuit wiring including inner leads is formed by electrolytic plating with a metal so that the inner leads are connected to the respective metal films.

Abstract: A COF-use tape carrier for a semiconductor device has dummy leads not to be electrically connected to a semiconductor chip, in the proximity of an edge of an opening of a solder resist. The dummy leads are provided on an insulating tape, between adjacent two inner leads that are relatively widely spaced from each other. The dummy leads extend across the edge of the opening of the solder resist, so that one end of each dummy lead is located within the opening of the solder resist, while the other end of the dummy lead is located under the solder resist. A semiconductor chip is to be mounted on a chip-mounting region of the insulating tape.

Abstract: In order to suppress defective lead forming and defective mounting, a semiconductor device comprises a sealing body which has a square planar shape, a semiconductor chip which lies within the sealing body, and a plurality of leads which are electrically connected with electrodes of the semiconductor chip, which extend inside and outside the sealing body and which are arrayed along latera of the sealing body, wherein an outer lead portion of each of the leads is such that a root part which protrudes out of the sealing body is formed at a lead width being equal to or greater than a lead thickness, and that a mounting part which joins to the root part through an intermediate part is formed at a lead width being less than the lead thickness.

Abstract: The invention relates to a method for fabricating a microcontact spring on a substrate (1) with at least one contact pad (2) and a first insulator layer (13) with a window above the contact pad (2).

Abstract: A method and structure for reducing mechanical shear stresses induced in an IC chip by metal interconnect lines that interconnect the chip with its surrounding substrate. A dielectric layer overlies at least a portion of the substrate and a peripheral surface region of the chip. The lines are formed on the dielectric layer and are electrically interconnected with contact pads on the peripheral surface region of the chip, i.e., beneath the dielectric layer. At least one trench is formed in the dielectric layer and surrounds the peripheral surface region of the chip. The lines traverse the trench so as to have nonplanar portions within the trench. The trenches and the nonplanar portions of the lines increase the expansion/contraction capability of the dielectric layer and lines in a region sufficiently close to where the lines are interconnected to the contact pads, such that shear stresses at critical points near the line-pad connections are significantly reduced.

Abstract: A LOC type semiconductor device comprises a semiconductor chip having a main surface in which semiconductor elements and a plurality of bonding pads are formed, and a back surface opposite the main surface; a plurality of leads each having an inner part and an outer part, and including a plurality of first leads having inner end portions extended on the main surface of the semiconductor chip and a plurality of second leads having inner end portions terminating near the semiconductor chip; bonding wires electrically connecting the bonding pads to bonding portions of the inner parts of the first and the second leads; and a sealing member sealing the semiconductor chip therein. A first bending portion is formed in the inner part of each second lead to prevent the sealing member from transformation by forming the sealing member in satisfactory resin balance between an upper portion and a lower portion of the sealing member.

Abstract: In order to suppress defective lead forming and defective mounting, a semiconductor device includes a sealing body which has a square planar shape, a semiconductor chip which lies within the sealing body, and a plurality of leads which are electrically connected with electrodes of the semiconductor chip, which extend inside and outside the sealing body and which are arrayed along lateral of the sealing body, wherein an outer lead portion of each of the leads is such that a root part which protrudes out of the sealing body is formed at a lead width being equal to or greater than a lead thickness, and that a mounting part which joins to the root part through an intermediate part is formed at a lead width being less than the lead thickness.

Abstract: A method and apparatus for increasing integrated circuit density in a semiconductor die assembly, and specifically, a dual LOC semiconductor die assembly. A first and a second die are substantially symmetrically back bonded to a die attach site on a opposing sides of a base lead frame. A first and a second offset lead frame, each having a plurality of lead fingers, are then attached to the base lead frame on opposing sides thereof so that their lead fingers respectively extend over the first and second dice in a cantilevered manner. Wire bonds are formed between lead ends of each of the lead fingers to corresponding bond pads on the first and second dice for electrical connection therebetween. The assembly is then encapsulated in a transfer molding process, after which the stacked dual LOC semiconductor assembly is subjected to a trim and form operation.

Abstract: A semiconductor. device comprises a semiconductor chip on which a plurality of grooves are defined, thus acting as a resisting member, the effect of which is to prevent the semiconductor chip from bending. Consequently, the thickness of the lower portion of the plastic layer becomes greater, thereby preventing cracks from occurring on the semiconductor chip.

Abstract: As the semiconductor chip is large-sized, highly integrated and speeded up, it becomes difficult to pack the semiconductor chip together with leads in a package. In view of this difficulty, there has been adopted the package structure called the “Lead-On-Chip” or “Chip-On-Lead” structure in which the semiconductor and the leads are stacked and packed. In the package of this structure, according to the present invention, the gap between the leading end portions of the inner leads and the semiconductor chip is made wider than that between the inner lead portions except the leading end portions and the semiconductor chip thereby to reduce the stray capacity, to improve the signal transmission rate and to reduce the electrical noises.

Abstract: A method of fabricating a semiconductor package that may contain two or more dies. The method generally comprises the steps of (A) mounting a first die having a first side on an assembly apparatus and (B) mounting a second die having a second side and an adjoining third side on said assembly apparatus. The second die may be oriented such that (i) the second side and the third side both face the first side and (ii) the second side and the third side are both substantially nonparallel to the first side.

Abstract: An apparatus and method for attaching a semiconductor die to a lead frame wherein the electric contact points of the semiconductor die are relocated to the periphery of the semiconductor die through a plurality of conductive traces. A plurality of leads extends from the lead frame over the conductive traces proximate the semiconductor die periphery and directly attaches to and makes electrical contact with the conductive traces in an LOC arrangement. Alternately, a connector may contact a portion of the conductive trace to make contact therewith.

Abstract: A semiconductor package including a bottom leadframe having a bottom plate portion and a first terminal extending from the bottom plate portion, and a second terminal being co-planar with the first terminal. The semiconductor package also comprises a semiconductor power enhancement mode JFET die having a bottom surface and a top surface on which a first metalized region and a second metalized region are disposed. The bottom surface of the JFET die is coupled to the bottom plate of the leadframe. The semiconductor package also comprises a copper plate coupled to and spanning a substantial part of the first metalized region, and at least one beam portion sized and shaped to couple the copper plate portion to the second terminal such that it is electrically coupled to the source.

Abstract: A member for a semiconductor package and a semiconductor package using the member, and a method for fabricating the semiconductor package are provided to simply connect chip pads provided on a semiconductor chip to external terminals. With the member for the semiconductor package and the package using the member according to the present invention, the chip pads can simply be connected with the corresponding external terminals. In addition, since the electrical paths between the chip pads and the external leads are relatively shortened, thus the electric properties are improved. Further, since the external terminal balls can be arranged regardless of the location of the chip pads, the semiconductor package can be easily designed and the size of the package can approximate the chip size and the plurality of external balls can be provided. Also, since it is possible to perform the package process with either the wafer or the individual chip, an application range can be flexibly extended.

Abstract: The invention provides a method and apparatus for electrically connecting the die of a high power semiconductor device to a substrate with a conductive strap such that the connection is resistant to the shear stresses resulting with changes in temperature. In one embodiment, the method includes providing a substrate having first and second portions that are electrically isolated from each other. A semiconductor die having top and bottom surfaces and one or more active electronic devices formed therein is also provided. The device has a first terminal connected to a first conductive layer on the bottom surface of the die, and a second terminal connected to a second conductive layer on the top surface of the die. The first conductive layer is electrically coupled to a top surface of the first portion of the substrate. The second conductive layer is electrically coupled to the second portion of the substrate with a metal strap.

Abstract: A semiconductor integrated circuit device, and method of manufacturing the same, having a conventional-type lead frame with the die paddle removed. In particular, the die paddle is replaced with a section of tape that is supported by the ends of the lead fingers. The semiconductor die is attached to the tape so that it may be wire bonded to the lead fingers. The tape contains at least one slot to allow for expansion and/or contraction of the tape due to various temperatures experienced during the manufacturing process so that the tape does not wrinkle or warp to alter the position of the die.

Abstract: A contact clip for the aluminum contact of a semiconductor device has a central nickel-iron body, preferably Nilo alloy 42, which is coated on top and bottom by a soft, but high conductivity metal such as gold, silver or copper. The nickel-iron body has a thickness of about 15 mils, and is about the thickness of the silicon die. The conductive layers have a thickness of about 5% to 20% of that of the nickel-iron core.

Abstract: A three-dimensional stacked semiconductor package includes first and second semiconductor chip assemblies and a conductive bond. The first semiconductor chip assembly includes a first semiconductor chip and a first conductive trace with a first routing line and a first pillar. The second semiconductor chip assembly includes a second semiconductor chip and a second conductive trace with a second routing line and a second pillar. The chips are aligned with one another, and the pillars are disposed outside the peripheries of the chips and aligned with one another. The conductive bond contacts and electrically connects the pillars.

Abstract: Methods for forming substantially chip scale packages and the resulting structures. The methods comprise applying an adhesive on an active surface of a semiconductor chip to form a patterned adhesive layer on a portion of the active surface. A leadframe having leads with inner lead ends and outer lead ends is provided. The inner lead ends of the leads are aligned proximate to the adhesive-free area and the leads are attached to the adhesive layer on the active surface of the semiconductor chip. The outer lead ends are oriented to form a footprint which is not substantially larger than the dimensions of the semiconductor chip.

Abstract: The present invention provides a bonding structure between a bonding pad and a bonding portion of a bonding wire made of an Au-base material, wherein said bonding pad further comprises: a base layer; at least a barrier layer overlying said base layer; and a bonding layer overlying said at least barrier layer, said bonding layer including an Al-base material, and wherein said bonding portion of said bonding wire is buried in said bonding layer, and an Au—Al alloy layer extends on an interface between said bonding portion and said bonding layer, and a bottom of said Au—Al alloy layer is in contact with or adjacent to an upper surface of said barrier layer.

Abstract: A leadframe assembly including a semiconductor die coupled to a mounting area includes at least three pedestals extending above the surface of the mounting area. The pedestals are of the same height and contact the bottom surface of the semiconductor die which is joined to the mounting area by an adhesive formed continuously over the mounting area. The method for forming the leadframe includes forming the pedestals by stamping a malleable leadframe or joining separately formed pedestals to the mounting area. The method further provides for forming an adhesive on the mounting area and joining the semiconductor die to the leadframe such that the adhesive advantageously extends along the sides of the semiconductor die.

Abstract: Semiconductor chip packages and methods of fabricating the same. The package includes a thermally conductive protective structure having an indentation open to a front side and a flange surface at least partially surrounding the indentation and facing to the front of the structure. A chip is disposed in the indentation so that the front surface of the chip, with contacts thereon, faces toward the front of the structure. A flexible dielectric film having terminals thereon is placed on the flange surface, and a compliant material is disposed between the film and the flange surface. The terminals on the film are connected to the contacts on the chip. The individual terminals on the film are movable with respect to the protective structure, which facilitates mounting and compensation for thermal expansion.

Abstract: A case for an integrated-circuit mounted on a substrate provides electrical conducting contacts between the integrated circuit and contact elements on an external circuit, e.g., a printed circuit, connected to the case. The case includes contact pins and planar contact leads have free ends that are electrically connected by pressure, without bonding, to corresponding contact areas on the substrate. The substrate carries leads connecting the substrate contact areas with the integrated circuit contacts. At least some of the planar contact leads are configured as a lead structure having a predetermined impedance.

Abstract: A semiconductor device having high output and a method of manufacturing the same are disclosed in which external resistance is reduced and radiating performance is improved.

Abstract: A method for attaching an integrated circuit chip to an organic substrate comprising the steps of providing an integrated circuit chip having an active and a passive surface, said active surface including a protective polymer layer; activating said polymer layer by exposing it to reactive ion etching plasma, thereby increasing the surface roughness and imparting affinity to adhesion; providing an electrically insulating substrate having first and second surfaces; and contacting said second surface of said substrate to said activated polymer layer on said chip, whereby strong adhesion is exerted at the interface between said layer and said substrate, directly attaching said substrate to said chip.

Abstract: A semiconductor device which improves heat radiation performance and realizes size reduction and enables heat to be radiated swiftly from both of the principal surfaces of a semiconductor chip even when the semiconductor chip has a construction vulnerable to stresses. It comprises several IGBT chips each having a collector electrode on one principal surface and an emitter electrode and a gate electrode on the other principal surface and two high thermal conductivity insulating substrates sandwiching these IGBT chips and having electrode patterns for bonding to the electrodes of the IGBT chips disposed on their sandwiching surfaces, the electrodes of the IGBT chips and the electrode patterns of the high thermal conductivity insulating substrates being bonded by brazing.

Abstract: A device having a semiconductor component and a printed circuit board are described. The semiconductor component has external contacts and the printed circuit board has contact terminals. The contact terminals display a central blind opening, into which the external contacts of the semiconductor component protrude and are in a force-locking engagement with the contact terminal areas. In the method of electromechanically connecting the two parts to form a device, after they have been aligned, the two components are merely pressed onto each other.

Abstract: Semiconductor die are soldered or epoxy bonded to lead frame pads and overhang the pads to reduce thermal differential expansion and contraction stresses applied to the die from the lead frame pad. A plastic housing of standard size is unchanged in dimension, but contains a greater total silicon die area.

Abstract: An improved electrical interconnect for an integrated circuit and methods for providing the same are disclosed. The interconnect includes an air bridge extending through an air space so as to reduce the capacitance of the interconnect. The air bridge is supported at a first and second end such that a midpoint of the air bridge sags as a result of gravitational forces acting on the air bridge. The air bridge includes a inner core section comprising a highly conductive material, such as silver, so as to provide the air bridge with a reduced resistance. In one embodiment, the material of the core comprises copper so that the core has a reduced ratio of mass density over modulus of elasticity (&rgr;/E) which provides the air bridge with a reduced degree of sagging. To inhibit air from contaminating the core, the air bridge further comprises a protective coating interposed between the core and the air space.

Abstract: A single layer surface mount package suitable for use with a high frequency microelectronic device includes a lead frame partially embedded in a dielectric material and a lid. The dielectric material is integrally formed or molded into the cavities between the leads and die attach area of the lead frame such that at least the die attach area remains exposed on the top and the bottom surface of the dielectric material. A sufficient length of each lead remains exposed beyond the perimeter of the dielectric material for surface mounting to a circuit of a next level assembly.

Abstract: A semiconductor module and a method for its fabrication are described. The semiconductor module has at least one semiconductor component that is disposed directly on a substrate body. The substrate body has an insulating ceramic provided with a metal layer. At least one connection conductor is joined to the metal layer by welding, in particular laser microwelding.

Abstract: A semiconductor device is provided which improves reliability by preventing connection defects with extensions and interface peeling occurring between a substrate and a sealing resin, and which can reduce the production cost by simplifying a fabrication process. In this semiconductor device, each lead 16 for electrically connecting an electrode terminal 12 of a semiconductor chip to an external connection terminal 14 comprises an extension 17 extending parallel to an electrode terminal formation surface of the semiconductor chip 10 with a predetermined distance from the electrode terminal formation surface, an external connection terminal post 22 provided to one of the end portions of the extension 17, and an electrode terminal post 24 connected to the electrode terminal 12 of the semiconductor chip 10. The electrode terminal post 22 and the extension 17 are sealed by a sealing resin 18, and the distal end portion of the external connection terminal post 24 is exposed from the sealing resin 18.

Abstract: Two memory chips each being subjected to memory accesses in 2-bit units are assembled into a stacked structure by placing their back surfaces one over the other, so as to make memory accesses in 4-bit units. A memory module is so constructed that a plurality of such semiconductor storage devices, in each of which two memory chips each being subjected to memory accesses in 2-bit units are assembled into a stacked structure by placing their back surfaces one over the other, so as to make memory accesses in 4-bit units, are mounted on a mounting circuit board which is square and which is formed with electrodes along one latus thereof.

Abstract: A method of increasing the packaging density of input/output interconnections between the semiconductor chip and substrate is described. Fine insulated wire is utilized for the connections to bonding pads provided selectively on the semiconductor chip without limiting to locating them along the periphery of the chip. The connections are made easily and quickly with the ball bonding process.

Abstract: A vertically mountable semiconductor device including at least one bond pad disposed on an edge thereof. The bond pad includes a conductive bump disposed thereon. The semiconductor device may also include a protective overcoat layer. The present invention also includes a method of fabricating the semiconductor device, including forming disconnected notches in a semiconductor wafer, redirecting circuit traces into each of the notches, and singulating the semiconductor wafer along the notches to form bond pads on the edges of the resultant semiconductor devices. A method of attaching the semiconductor device to a carrier substrate includes orienting the semiconductor device such that the bond pad is aligned with a corresponding terminal of the carrier substrate, and establishing an electrical connection between the bond pad and the terminal.