Abstract: A semiconductor module and a method for producing the same is disclosed. One embodiment provides that an intermediate element has been or is formed, which has been or is formed for making electrical contact materially between a contact region provided and a connection region provided and in direct material and electrical contact with and for area adaptation between these.

Abstract: A stacked semiconductor device includes a first semiconductor element mounted on a circuit substrate and a second semiconductor element stacked on the first semiconductor element via a spacer layer. An electrode pad of the first semiconductor element is electrically connected to a connection portion of the circuit substrate through a first metal wire. A vicinity of the end portion of the first metal wire connected to the electrode pad is in contact with an insulating protection film which covers the surface of the first semiconductor element.

Abstract: A semiconductor package can comprise a die stack attached to a substrate, with bond wires electrically connecting the two. Often multiple die stacks are adhered to a single substrate so that several semiconductor packages can be manufactured at once. A molding compound flow controller is optimally associated with the substrate or semiconductor package at one or more various locations. Flow controllers can control or direct the flow of the molding compound during the encapsulation process. Flow controllers can be sized, shaped, and positioned in order to smooth out the flow of the molding compound, such that the speed of the flow is substantially equivalent over areas of the substrate containing dies and over areas of the substrate without dies. In this manner, defects such as voids in the encapsulation, wire sweeping, and wire shorts can be substantially avoided during encapsulation.

Abstract: A package may include a lower unit package and an upper unit package. Each of the unit packages may include a circuit substrate having a lower surface and an upper surface. Wire bonding pads may be provided of the lower surface of the circuit substrate, and chip bonding pads may be provided on the upper surface of the circuit substrate. An IC chip may be provided on the lower surface of the circuit substrate. The IC chip may have an active surface with wire lands and bump lands. Chip bumps may be provided on the bump land. The wire bonding pads of the circuit substrate may be connected to the wire lands of the IC chip using bonding wires. The chip bumps of the upper unit package may be connected to the chip bonding pads of the lower unit package. An IC chip may include a substrate. A conductive layer may be provided on the substrate. The conductive layer may define a bump land for supporting a chip bump and a wire land for connecting to a bonding wire.

Abstract: Methods and apparatus for eliminating wire sweep and shorting while avoiding the use of under-bump metallization and high cost attendant to the use of conventional redistribution layers. An anisotropically conductive (z-axis) conductive layer in the form of a film or tape is applied to the active surface of a die and used as a base for conductive redistribution bumps formed on the anisotropically conductive layer, bonded to the ends of conductive columns thereof and wire bonded to the bond pads of the die. Packages so formed may be connected to substrates either with additional wire bonds extending from the conductive redistribution bumps to terminal pads or by flip-chip bonding using conductive bumps formed on the conductive redistribution bumps to connect to the terminal pads. The acts of the methods may be performed at the wafer level. Semiconductor die assemblies may be formed using the methods.

Abstract: Provided are a semiconductor package and a method of manufacturing the semiconductor package, and more particularly, a semiconductor package with bonding wires and a method of manufacturing the semiconductor package. The semiconductor package includes a substrate including a finger, at least one semiconductor chip stacked on the substrate, the semiconductor chip including a chip pad, and a wire which electrically connects the finger with the chip pad, wherein one end of the wire bonds with an upper surface and lateral surfaces of the finger.

Abstract: A system may include a first integrated circuit die comprising a first upper surface, an integrated circuit package substrate comprising a second upper surface, a wire coupled to the a first upper surface and to the second upper surface, a plurality of elements coupled to the first upper surface, and a second integrated circuit die coupled to the plurality of elements. A portion of the wire is disposed between the first integrated circuit die and the second integrated circuit die.

Abstract: The present invention relates to a three-dimensional package and method of making the same. The package includes a first substrate, a first chip, a second substrate, a second chip, a spacer, and a first molding compound. The first chip is electrically connected to the first substrate. The second substrate is electrically connected to the first substrate. The second chip is electrically connected to the second substrate. One end of the spacer is attached to the first chip, and the other end of the spacer is attached to the second chip. The first molding compound encapsulates the first substrate, the first chip, the second substrate, the second chip, and the spacer. In the present invention, the adhesion between the spacer and the second chip is enhanced, and the overall thickness of the three-dimensional package is reduced.

Abstract: A memory chip has a substrate, a die and an encapsulant. The substrate has multiple edges, a top surface, multiple die contacts, multiple outer contacts and multiple jumper contacts. The multiple die contacts are formed on the top surface of the substrate. The multiple outer contacts are formed on the edges of the substrate, and parts of the output contacts are electronically connected to parts of the die contacts directly. The multiple jumper contacts are formed on the top surface of the substrate and are electronically connected to the die contacts and outer contacts that are not connected together. The die is mounted on the substrate and electronically connects to the die contacts through bonding wires. The encapsulant is formed on the top surface of the substrate, entirely covers and protects the die contacts, the jumper contacts and the die.

Abstract: A method for electrically connecting an integrated circuit to a via in a substrate is disclosed. The method can include deforming a ball over the via to form a bump and attaching a bond wire to the bump. The method also can include attaching the bond wire to the integrated circuit, such as by forming an end of the bond wire into a second ball and deforming the second ball over the integrated circuit. Alternatively, the method can include forming an end of the bond wire into a ball and deforming the ball over the via. Embodiments of a disclosed integrated circuit and substrate assembly can include, for example, a bump aligned with at least a portion of a via in a substrate and a bond wire attached to the integrated circuit and the bump. Other embodiments can include a via with a top metal cap and an upper plating.

Abstract: An integrated circuit package includes a package substrate, a die attach pad formed on the package substrate for securing a die to the package substrate, a ground bonding ring formed on the package substrate for attaching core and I/O ground bond wires between the die and the package substrate, and a first plurality of bond fingers formed immediately adjacent to the ground bonding ring for attaching a first set of I/O signal bond wires between the package substrate and the die.

Abstract: A semiconductor device comprises a semiconductor element having electrodes, a metal member, wires that electrically connect the semiconductor element and the metal member and/or electrodes within the semiconductor element, wherein the wires constitute at least a first wire loop and a second wire loop, the first wire loop is bonded at one end to a first bonding point and at the other end to a second bonding point, and has a flat part which includes the surface of a boll part and the wire located contiguously the ball part surface, and the second wire loop connects the surface of the ball part and a third bonding point.

Abstract: A method of manufacturing an electronic component comprising an integrated circuit and a core, includes the steps of providing the integrated circuit having at least two accessible contacts, providing the core, assembling the integrated circuit and the core together by means of an adhesive substance, winding a wire on the core in order to produce a winding, bonding or soldering a first end of the wire to a first one of said contacts and bonding or soldering a second end of the wire to a second one of said contacts.

Abstract: A semiconductor package (100, 150, 200, 250), and method of forming the package, including a substrate (102, 102?, 202, 202?) having an opening (104, 104?, 204, 204?) formed therein. Contact pads (112, 112?, 212, 212?) are formed about a periphery of the opening on a first side of the substrate (106, 106?, 206, 206?) and a second opposing side (132, 132?, 232, 232?) of the substrate. A flip chip die (120, 120?, 220, 220?) is mounted to the substrate, having an active side (114, 114?, 214, 214?) mounted on a first side of the substrate and in electrical communication with at least some of the contact pads formed on the first side of the substrate. At least one wire bond die (110, 110?, 210, 210?) is mounted through the opening, with a non-active side mounted on the active side of the flip chip die. The wire bond die is in electrical communication with at least some of the plurality of contact pads formed on the second opposing side of the substrate.

Abstract: An electrical component includes at least one first semiconductor substrate, at least one contact means for the external contacting, and at least one bonding wire. The contact means has a first side and, diametrically opposite, a second side. The semiconductor substrate is situated on the first side of the contact means. The semiconductor substrate and the contact means are electrically conductively connected using the bonding wire and the bonding wire is connected to the contact means on the second side. A core idea is that the contact means has a recess on the second side and the bonding wire is connected to the contact means in the area of the recess.

Abstract: A semiconductor integrated circuit includes a power transistor formed on a semiconductor substrate, a plurality of first metal patterns and a plurality of second metal patterns which are formed right above the power transistor and function as a first electrode and as a second electrode of the power transistor, respectively, a plurality of first buses each electrically connected with, of a plurality of first metal patterns, a corresponding first metal pattern, a plurality of second buses each electrically connected with, of a plurality of second metal patterns, a corresponding second metal pattern, wherein one contact pad is provided to each of a plurality of first buses and a plurality of second buses.

Abstract: Substrates for mounting microelectronic dies, methods for forming vias in such substrates, and methods for packaging microelectronic devices are disclosed herein. A method of manufacturing a substrate in accordance with one embodiment of the invention includes forming a conductive trace on a first side of a sheet of non-conductive material, and forming a via through the non-conductive material from a second side of the sheet to the conductive trace. The method further includes removing a section of the non-conductive material to form an edge of the non-conductive material extending across at least a portion of the via. In one embodiment, forming the edge across the via exposes at least a portion of the second conductive trace for subsequent attachment to a terminal on a microelectronic die.

Abstract: A multilayer wiring substrate mounted with an electronic component includes an electronic component, a core material layer having a first opening for accommodating the electronic component, a resin layer which is formed on one surface of the core material layer and which has a second opening greater than the first opening, a supporting layer which is formed on the other surface of the core material layer and which supports the electronic component, a plurality of connection conductor sections which are provided around the first opening and within the second opening on the one surface of the core material layer, bonding wires for electrically connecting the electronic component to the connection conductor sections, and a sealing resin filled into the first and second openings in order to seal the electronic component and the bonding wires.

Abstract: A semiconductor package on which a semiconductor device can be stacked and fabrication method thereof are provided. The fabrication method includes the steps of mounting and electrically connecting at least one semiconductor chip on the substrate, mounting an electrical connecting structure consisting of an upper layer circuit board and a lower layer circuit board on the substrate and electrically connecting the electrical connecting structure to the substrate, where the semiconductor chip is received in a receiving space formed in the electrical connecting structure; forming an encapsulant on the substrate encapsulating the semiconductor chip and the electrical connecting structure, and after the encapsulant is formed, exposing top surface of the upper layer circuit board with a plurality of solder pads from the encapsulant to allow at least one semiconductor device to electrically connect the upper layer circuit board so as to form a stack structure.

Abstract: A method is disclosed of repairing wirebond damage on semiconductor chips such as high speed semiconductor microprocessors, application specific integrated circuits (ASICs), and other high speed integrated circuit devices, particularly devices using low-k dielectric materials. The method involves surface modification using reactive liquids. In a preferred embodiment, the method comprises applying a silicon-containing liquid reagent precursor such as TEOS to the surface of the chip and allowing the liquid reagent to react with moisture to form a solid dielectric plug or film (50) to produce a barrier against moisture ingress, thereby enhancing the temperature/humidity/bias (THB) performance of such semiconductor devices.

Abstract: A bonding wire and a bond using such a bonding wire. The contour of the cross-sectional area of the bonding wire has a shape deviating from a circle shape and from a rectangle shape having two sides of different length.

Abstract: Disclosed is a device which comprises a substrate, a plurality of signal output terminal electrodes provided on the substrate, a plurality of signal input terminal electrodes provided on the substrate, and a display driver IC having input terminals thereof connected to the signal input terminal electrodes and output terminals thereof connected to the signal output terminal electrodes. A plurality of output terminals (first, third, fifth, . . . (i+1)th, and (n?1)th) are included on a first side of the display driver IC facing the signal input terminal electrodes. A second side on an opposite side of the first side faces the signal input terminal electrodes. Input terminals 22 are included in at least one segment of the second side, and output terminals (second, fourth, sixth, ith, jth, (j+2)th, (n?2)th, and nth) are included in at least one portion of the remaining segment of the second side.

Abstract: An integrated circuit chip comprising a bond wire and a mass of magnetic material provided on the bond wire, wherein the mass of magnetic material increases the inductance of the bond wire.

Abstract: An integrated circuit device comprising an integrated circuit die having a plurality of bond pads that are selectively connected to a plurality of inner leads of a leadframe. At least two bond pads are connected to at least one of the inner leads, and/or at least two inner leads are connected to at least one of bond pads with a single bond wire. A single bond wire is ball or wedge bonded to a first bond pad or inner lead and subsequently wedge bonded to one or more second bond pads or inner leads, then it is connected to a third or last bond pad or inner lead. The single bond wire requires only one connection area at each of the bond pad(s) and/or inner lead(s). The bond pad(s) of the die and/or inner lead(s) of the leadframe are thereby electrically connected together by the single bond wire.

Abstract: A board for connecting a bare semiconductor die with a bond pad arrangement which does not conform to a master printed circuit board with a specific or standardized pin out, connector pad, or lead placement arrangement. The board comprises a printed circuit board including first elements, such as minute solder balls, pins, or bond wires, for making electrical contact between the board and the master board, and second elements, such as minute solder balls, pins, or bond wires, for making electrical contact between the semiconductor die and the board. The board has circuit traces for electrical communication between the board/master board electrical contact elements, and the semiconductor die board electrical contact elements.

Abstract: A semiconductor device mounted on a mother board has a circuit board to be positioned on the mother board and a semiconductor chip positioned on the circuit board. The circuit board has a connection pad, a relay pad spaced away from the connection pad, and a wire connecting between the connection pad and the relay pad on a surface of the circuit board supporting the semiconductor chip. Also, the semiconductor chip has a connection pad corresponding to the connection pad formed on the circuit board. Further, the connection pad on the circuit board and the connection pad on the semiconductor chip are electrically connected to each other through a bonding wire.

Abstract: A semiconductor package includes a metal plate in which one or more openings are formed, the metal plate mounting a semiconductor chip and a printed wire pattern substrate, e.g. a PCB, mounting one or more decoupling capacitors. The semiconductor chip is in direct contact with the metal plate to improve thermal characteristics, and the substrate is supported by the metal plate to increase mechanical stability of the package. The one or more openings in the metal plate accommodate the passing therethrough of plural pins electrically connected via the printed wire pattern substrate to the semiconductor chip. The semiconductor package can be usefully applied to a digital micro-mirror device (DMD) semiconductor package for use in a projection display device.

Abstract: Disclosed is a semiconductor device that includes an electrically insulating, sheet-like substrate with first and second surfaces, at least one opening, and a certain thickness. On the first surface are a plurality of electrically conductive routing strips and a plurality of contact pads; at least one of the contact pads is electrically connected with at least one of the routing strips, and may have a solder body attached. A semiconductor chip is positioned in the opening while leaving a gap to the substrate; the chip has an active surface including at least one bond pad, and a passive surface substantially coplanar with the second substrate surface. Substrate thickness and chip thickness may be substantially equal. Bonding elements bridge the gap to connect electrically bond pad and routing strip.

Abstract: An IC device includes a die and a first package interposer stacked over a second package interposer. The IC device includes a first conductive connection from a first bond pad of the die directly to a bond pad of the first interposer and a second conductive connection from a second bond pad of the die directly to a bond pad of the second interposer. Another IC device includes a second die stacked over a separate first die and a first package interposer stacked over a separate second package interposer. The first die is stacked over the first interposer. A first conductive connection exists from a bond pad of the first die directly to a bond pad of the first interposer and a second conductive connection exists from a bond pad of the second die directly to a bond pad of the second interposer.

Abstract: According to one exemplary embodiment, an overmolded package includes a component situated on a substrate. The overmolded package further includes an overmold situated over the component and the substrate. The overmolded package further includes a wirebond cage situated over the substrate and in the overmold, where the wirebond cage surrounds the component, and where the wirebond cage includes a number of wirebonds. The wirebond cage forms an EMI shield around the component. According to this exemplary embodiment, the overmolded package further includes a conductive layer situated on a top surface of the overmold and connected to the wirebond cage, where the conductive layer forms an EMI shield over the component.

Abstract: An integrated circuit package system including providing a plurality of substantially identical package leads formed in a single row, and attaching bond wires having an offset on adjacent locations of the package leads.

Abstract: A columnar bump formed of copper etc. is formed on a wiring film of a semiconductor chip through an interconnected film and an adhesive film in a wafer unit by electrolytic plating in which package formation is possible. An oxidation prevention film is formed of such as gold on an upper surface or a part of the upper surface and side surface. A wet prevention film of such as an oxide film is formed on the columnar bump side as needed. If this bump is soldered to the pad on a packaging substrate, solder gets wet in the whole region of the columnar bump upper surface and only a part of the side surface. Stabilized and reliable junction form can be thus formed. Moreover, since the columnar bump does not fuse, the distance between a semiconductor board and a packaging board is not be narrowed by solder.

Abstract: A wire loop comprises a wire connecting a first bonding point and a second bonding point therethrough, wherein the wire has a crushed part formed therein by crushing the part of the wire and a top of a ball bonded to the first bonding point with a capillary. The wire loop is formed by a wire bonding method which includes: bonding the wire to the first bonding point; moving the capillary horizontally and vertically while carrying out loop control; bonding the wire to the vicinity of the top of the ball bonded to the first bonding point; and thereafter, moving the capillary horizontally and vertically to the second bonding point while delivering the wire and carrying out loop control, and then bonding the wire to the second bonding point.

Abstract: An integrated circuit package system is provided forming an external interconnect from a padless lead frame, encapsulating a heat sink and the external interconnect, mounting an integrated circuit die on the heat sink, and encapsulating the integrated circuit die, the heat sink, and the external interconnect.

Abstract: The present invention relates to an IC substrate provided with over voltage protection functions and thus, a plurality of over voltage protection devices are provided on a single substrate to protect an IC chip directly. According to the present invention, there is no need to install protection devices at respective I/O ports on a printed circuit board to prevent the IC devices from damage by surge pulses. Therefore, the costs to design circuits are reduced, the limited space is efficiently utilized, and unit costs to install respective protection devices are lowered down.

Abstract: A semiconductor device of the present invention comprises a first semiconductor chip that includes a first internal circuit and at least one first conductive pad which is provided on its upper surface and is not connected to the first internal circuit, a second semiconductor chip provided on the first semiconductor chip that includes a second internal circuit and at least one second conductive pad which is provided on its upper surface and is connected to the second internal circuit, at least one first connecting member for connecting between the second semiconductor chip provided on the first semiconductor chip, at least one first conductive pad and at least one second conductive pad, and at least one second connecting member led from at least one first conductive.

Abstract: A semiconductor device which can meet the requirement for a further increase in pins, which multi-functionalization and faster operation would entail is to be provided. Bonding pads and bonding pads are arranged in a zigzag pattern in a direction along an outer circumference of a main surface of a chip. To focus on power supply-line bonding pads among all the bonding pads, an odd number of bonding pads are to be arranged in a direction of the outer circumference of the main surface between adjoining bonding pads. A greater width is secured for the power supply-line bonding pads than for other bonding pads, and a diameter of wires to be connected to the power supply-line bonding pads is set greater than that of other wires.

Abstract: A semiconductor package is disclosed with a recess (51) for an integrated circuit die (52). The recess is made by bending or deforming all layers of a package substrate, and therefore the recess contains circuitry to connect to the integrated circuit die. The integrated circuit die is electrically connected to the package substrate by either wirebonds (53a), TAB or die solder balls (53b). The package substrate (50), a single sided printed wiring board, has a thick metal core (100) and one or more thin build up layers.

Abstract: A semiconductor device (10) includes a semiconductor die (20) and an inductor (30, 50) formed with a bonding wire (80) attached to a top surface (21) of the semiconductor die. The bonding wire is extended laterally a distance (L30, L150) greater than its height (H30, H50) to define an insulating core (31, 57). In one embodiment, the inductor is extended beyond an edge (35, 39) of the semiconductor die to reduce loading.

Abstract: An efficient chip stacking structure is described that includes a leadframe having two surfaces to each of which can be attached stacks of chips. A chip stack can be formed by placing a chip active surface on a back surface of another chip. Electrical connections between chips and leads on the leadframe are facilitated by bonding pads on chip active surfaces and by via that extend from the bonding pads through the chips to the back surfaces.

Abstract: The present invention provides a package device for reducing the electromagnetic/radio frequency interference, which includes a first substrate with a shielding structure on the under surface of the first substrate, and an insulating layer on the shielding structure. The first substrate includes a through hole that is filled with the conductor therein. A plurality of lead-frames located on the bottom surface of the first substrate. A second substrate located above between the two lead-frames. Then, the molding compound encapsulated to cover the above structures to form a package device. Therefore, the shielding path of the package device is constructed of the plurality of lead-frames, the conductor within the first substrate, the shielding structure, and the grounded to discharge the electromagnetic/radio frequency out of the package device, thus, the electromagnetic/radio frequency interference for the package device can be reduced.

Abstract: Solder joints coupling pins to a microelectronic package substrate are enshrouded with an encapsulation material. In this manner, pin movement is limited even if the pin solder subsequently melts.

Abstract: A bond pad structure which includes an aluminum bond pad which include one or more dopants that effectively control the growth of IMC to a nominal level in spite of high tensile stresses in the wafer. For example, aluminum can be doped with 1–2 atomic % of Mg. Alternatively, Pd or Si can be used, or elements like Cu or Si can be used as the dopant in order to reduce the overall tensile stresses in the wafer. This can control the abnormal growth of IMC, thus arresting the IMC crack formation. A combination of dopants can be used to both control the tensile stresses and also slightly alter the gold-Aluminum interface thus enabling a uniform and thin IMC formation. This tends to reduce or eliminate any voiding or cracking which would otherwise occur at the wire bond transfer.

Abstract: A package for a semiconductor die comprises a semiconductor die with a bond pad. The package further includes a package lead and a bond wire with a first end portion coupled to the package lead, a second end portion coupled to the bond pad, and an intermediate portion. A non-conductive intermediate lead finger mounting substrate with an intermediate lead finger is positioned within the package. The intermediate lead finger is positioned between the lead finger and the bond pad and is attached to the intermediate portion of the bond wire.

Abstract: A routing pattern for high speed signals for a package substrate. Electrically conductive bond fingers are disposed on a first surface of the package substrate. The first surface is adapted to receive an integrated circuit in an attachment zone, and the bond fingers are disposed in at least two substantially concentric rings around the attachment zone. The bond fingers of the innermost ring of bond fingers are all routed to electrically conductive first traces disposed on a first layer of the package substrate. The bond fingers other that those on the innermost ring of bond fingers are all routed to electrically conductive second traces disposed on a separate second layer of the package substrate. The package substrate has electrically conductive traces on only the first layer and the second layer. Electrically conductive contacts are disposed on a substantially opposing second surface.

Abstract: An electrical connection arrangement between a semiconductor circuit arrangement and an external contact device, and to a method for producing the connection arrangement is disclosed. In one embodiment, a metallic layer is deposited onto at least one contact terminal and/or the contacts and the wire, the metallic layer protecting the contact terminal or the electrical connection against ambient influences and ensuring a high reliability.

Abstract: An integrated circuit device comprising an integrated circuit die mounted on a leadframe having a plurality of inner leads. The integrated circuit die has a plurality of bond pads that are electrically connected to the inner leads of the leadframe, wherein at least two bond pads are connected to a one of the plurality of inner leads and/or at least two inner leads are connected to one or more bond pads with a single bond wire. A single bond wire is connected to a first bond pad or inner lead and subsequently wedge or stitch bonded to a second bond pad or inner lead, then it is connected to a third bond pad or inner lead. The single bond wire requires only one connection area at each of the bond pad(s) and inner lead(s). The bond pad(s) of the die and inner lead(s) of the leadframe are thereby electrically connected together by the single bond wire.

Abstract: Packaging a semiconductor device is provided. The semiconductor device comprises a plurality of semiconductor elements; a plurality of conductors providing interconnection between said plurality of semiconductor elements; and an insulative material applied across only a portion of at least two of said plurality of conductors.

Abstract: A method of forming a bump electrode on an IC electrode includes the steps of forming a ball bond on an IC electrode by a wire bonding apparatus, moving a bonding capillary upward, moving the bonding capillary sideways and then downward, bonding an Au wire to the ball bond portion, and cutting the Au wire. The Au wire is prevented from coming in contact with portions around the ball bond portion other than the ball bond portion by presetting a descent position of the bonding capillary to a position higher than a position in which the ball bond is formed.