Abstract: A device is disclosed which includes a flexible material including at least one conductive wiring trace, a first die including at least an integrated circuit, the first die being positioned above a portion of the flexible material, and an encapsulant material that covers the first die and at least a portion of the flexible material. A method is disclosed which includes positioning a first die above a portion of a flexible material, the first die including an integrated circuit and the flexible material including at least one conductive wiring trace, and forming an encapsulant material that covers the first die and at least a portion of the flexible material, wherein at least a portion of the flexible material extends beyond the encapsulant material.

Abstract: A MEMS microphone module having an application specific IC and a microphone chip is disclosed. The application specific IC has a plurality of first vias and a plurality of first pads, and the first vias are connected to the first pads. The microphone chip has a resonant cavity, a plurality of second vias and a plurality of second pads, and the second vias are connected to the second pads. The microphone chip is disposed on a first surface of the application specific IC with an opening of the resonant cavity facing toward a first surface of the application specific IC. The second conductive vias of the microphone chip are also electrically connected to the first vias of the application specific IC. By placing the microphone chip on the first surface of the application specific IC, the present invention could reduce the package size and increase the reliability of the package.

Abstract: Flip chip packages formed at a wafer level on semiconductor wafers for electronic systems provide convenient prepackaging. The package, in one embodiment, includes an adhesive layer applied to an active side of the wafer. The adhesive layer has openings to permit access to the conductive pads on each die. A conductive material substantially fills the openings. A pre-packaged die diced from the semiconductor wafer is mounted to a support wherein the conductive material effects electrical interconnection between the conductive pads on the die and receiving conductors on the support. The pre-packaged die can be coupled to a processor for an electronic system. To provide greater mounting densities, two or more dice may be coupled with the adhesive layer providing a covering for the two or more dice. The prepackaged chip with two or more dice may be coupled to a processor reducing the volume needed in an electronic system.

Abstract: A MOSFET on SOI device includes an upper region having at least one first MOSFET type semi-conductor device formed on a first semi-conductor layer stacked on a first dielectric layer, a first conductive layer and a first portion of a second semi-conductor layer. A lower region includes at least one second MOSFET type semi-conductor device formed on a second portion of the second semi-conductor layer, a gate of the second semi-conductor device being formed by at least one conductive portion. The second semi-conductor layer is arranged on a second dielectric layer stacked on a second conductive layer.

Abstract: A photodetector, comprises a first section comprising at least one p-n junction that converts photon energy into a separate charge carrier and hole carrier; and another section of semiconductors of opposing conductivity type connected electrically in series and thermally in parallel in a heat dissipating and electric generating relationship to the cell to augment generation of electric energy of the first section.

Abstract: A mountable integrated circuit package system includes: forming a base integrated circuit package system includes: providing a first substrate, and forming a package encapsulation having a cavity over the first substrate with the first substrate partially exposed within the cavity; and mounting an interposer including a central aperture over the package encapsulation and the first substrate with the central aperture over the cavity.

Abstract: A semiconductor package and a method for manufacturing the same is provided for minimizing or preventing warpage and twisting of semiconductor chip bodies as a result of thinning them during grinding. The semiconductor package includes a semiconductor chip body and a substrate. The semiconductor chip body has a first surface, a second surface facing away from the first surface, through-electrodes which pass through the semiconductor chip body and project from the second surface, and a warpage prevention part which projects in the shape of a fence along an edge of the second surface. The substrate has a substrate body and connection pads which are formed on an upper surface of the substrate body, facing the second surface, and which are connected with the projecting through-electrodes.

Abstract: A method of creating a semiconductor chip having a substrate, a doped semiconductor material abutting the substrate and a device pad at an outer side of the doped semiconductor material involves creating a via through at least a portion of the substrate, the via having a periphery and a bottom at a location and depth sufficient to bring the via into proximity with the device pad but be physically spaced apart from the device pad, introducing an electrically conductive material into the via, and connecting the electrically conductive material to a signal source so the signal will deliberately be propagated from the electrically conductive material to the device pad without any direct electrical connection existing between the electrically conductive material and the device pad.

Abstract: A stackable layer and stacked multilayer module are disclosed. Individual integrated circuit die are tested and processed at the wafer level to create vertical area interconnect vias for the routing of electrical signals from the active surface of the die to the inactive surface. Vias are formed at predefined locations on each die on the wafer at the reticle level using a series of semiconductor processing steps. The wafer is passivated and the vias are filled with a conductive material. The bond pads on the die are exposed and a metallization reroute from the user-selected bond pads and vias is applied. The wafer is then segmented to form thin, stackable layers that can be stacked and vertically electrically interconnected using the conductive vias, forming high-density electronic modules which may, in turn, be further stacked and interconnected to form larger more complex stacks.

Abstract: A die-stacked package structure, wherein a plurality of dies are stacked on the substrate with a rotation so that a plurality of metallic ends and the metal pad on each die on the substrate can all be exposed; a plurality of metal wires are provided for electrically connecting the plurality of metal pads on the plurality of dies with the plurality metallic ends on the substrate in one wire bonding process; then an encapsulate is provided for covering the plurality of stacked dies, a plurality of metal wires and the plurality of metallic ends on the substrate.

Abstract: A manufacturing method for a layered chip package including a stack of a plurality of layer portions includes the steps of: fabricating a layered substructure by stacking a plurality of substructures each including a plurality of layer portions corresponding to the plurality of layer portions of the layered chip package; and fabricating a plurality of layered chip packages by using the layered substructure.

Abstract: Provided are a stack chip and a stack chip package having the stack chip. Internal circuits of two semiconductor chips are electrically connected to each other through an input/output buffer connected to an external connection terminal. The semiconductor chip has chip pads, input/output buffers and internal circuits connected through circuit wirings. The semiconductor chip also has connection pads connected to the circuit wirings connecting the input/output buffers to the internal circuits. The semiconductor chips include a first chip and a second chip. The connection pads of the first chip are electrically connected to the connection pads of the second chip through electrical connection means. Input signals input through the external connection terminals are input to the internal circuits of the first chip or the second chip via the chip pads and the input/output buffers of the first chip, and the connection pads of the first chip and the second chip.

Abstract: A stacked package structure utilizes flip-chip technology to stack an acoustic micro-sensor on an integrated circuit (IC) device having a recess as a back chamber and cover the acoustic micro-sensor using a glass substrate or a planar substrate with an aperture. With the use of the stacked package structure, the package volume of the acoustic micro-sensor can be reduced effectively.

Abstract: An integrated circuit package system that includes: providing an electrical interconnect system including a first lead-finger system and a second lead-finger system; stacking a second device over a first device between the first lead-finger system and the second lead-finger system; connecting the second device to the second lead-finger system with a bump bond; stacking a dummy device over the second device; and connecting the first device to the first lead-finger system with a wire bond.

Abstract: An integrated circuit package-in-package system is provided forming a first integrated circuit package having a first interface, stacking a second integrated circuit package having a second interface above the first integrated circuit package, fitting the first interface and the second interface, and attaching a third integrated circuit package on the second integrated circuit package.

Abstract: A semiconductor device is formed by mutually connecting a first semiconductor chip with second and third semiconductor chips arranged side by side, with the active surface of the first chip faced to those of the second and third chip. Both the second and third semiconductor chips have functional elements on their active surfaces. The first semiconductor chip has, in its active surface, a wiring for connecting the second semiconductor chip and the third semiconductor chip, and a terminal for external connection on its surface opposite to its active surface.

Abstract: A package includes an internal package stacked upon a primary die. The package includes interconnection balls to allow the package to be electrically and physically connected to a mother board. The package is mounted to the mother board in a single operation thus minimizing labor and the associated manufacturing cost. Further, the package is tested and verified to be non-defective prior to mounting to the mother board.

Abstract: A semiconductor device includes a semiconductor construction assembly having a semiconductor substrate which has first and second surfaces, and has an integrated circuit element formed on the first surface, a plurality of connection pads which are connected to the integrated circuit element, a protective layer which covers the semiconductor substrate and has openings for exposing the connection pads, and conductors which are connected to the connection pads, arranged on the protective layer, and have pads. An upper insulating layer covers the entire upper surface of the semiconductor construction assembly including the conductors except the pads. A sealing member covers at least one side surface of the semiconductor construction assembly.

Abstract: A stackable semiconductor package includes a substrate with a first side surface that includes circuit patterns. Each circuit pattern includes a pad. A semiconductor die is electrically coupled to the circuit patterns. An encapsulant covers the semiconductor die and the first side surface of the substrate inward of the pads. A layer of a solder is fused to each of the pads. A lateral distance between immediately adjacent pads is selected to be greater than a lateral distance between sidewalls of the encapsulant and immediately adjacent pads, and a height of the solder layers relative to the first side surface is selected to be less than a height of the sidewalls of the encapsulant, so that misalignment of a semiconductor package stacked on the solder layers/pads is self-correcting when juxtaposed ones of the solder layers and respective solder balls of the second semiconductor package are ref lowed and fused together.

Abstract: A wired circuit board having terminals that can provide reliable placement of molten metals on the terminals, to connect between the terminals and the external terminals with a high degree of precision. An insulating base layer 3 is formed on a supporting board 2, and a conductive pattern 4 is formed on the insulating base layer 3 so that a number of lines of wire 4a, 4b, 4c, 4d, magnetic head connecting terminals 7, and external connecting terminals 8 are integrally formed and also first through holes 9 are formed in the external connecting terminals 8. Thereafter, after an insulating cover layer 10 is formed, third through holes 20 and second through holes 19 are formed in the supporting board 2 and in the insulating base layer 3, respectively, to communicate with the first through holes 9.

Abstract: A microelectronic element package has one or more individual carrier units overlying a region or regions of the front or rear surface of the microelectronic element, leaving other regions of the microelectronic element surface uncovered. The carrier units can be made economically using only a small area of a dielectric film or other circuit panel material.

Abstract: There is provided a small and high-performance System in Package (SiP) suitable for high-density mounting. A System in Package (SiP) has a stack structure such that two memory chips are stacked and mounted over the main surface of a wiring substrate, a microcomputer chip is stacked and mounted over the upper part thereof, and the chips are sealed by a mold resin. Each of the memory chips is constructed so as to transmit and receive data to/from the outside of the system via the microcomputer chip. The microcomputer chip is constructed of a multiport structure having various interfaces between it and the outside of the system in addition to an interface between it and the inside of the system. The number of terminals (pins) of the microcomputer chip is much larger than that of the memory chips.

Abstract: A method of manufacturing a semiconductor device and a semiconductor device including a first semiconductor element mounted on a first surface of a base plate, wherein solder balls are formed on a second opposite surface of the base plate—such that the second opposite surface includes an area without solder balls. At least one second semiconductor element is mounted to the base plate at the area of the second surface without solder balls. The at least one semiconductor element may be mounted to the base plate using low molecular adhesive, or in the alternative, high temperature solder.

Abstract: A semiconductor pellet and chip components are provided on an insulating substrate, and are sealed with a molding resin that is molded by transfer molding. The chip components are positioned so as to surround the semiconductor pellet on all four sides. The lengthwise directions of the chip components surrounding the semiconductor pellet are aligned in a uniform direction. The insulating substrate is set within a die molding apparatus so that during resin injection, the lengthwise directions of the chip components are aligned substantially perpendicularly to the direction of flow of the injected resin.

Abstract: The present invention provides a semiconductor device which comprises a lead frame including a die pad having one or two or more openings, a substrate mounted over the die pad so as to expose a plurality of semiconductor chip connecting second electrode pads from the openings of the die pad, a plurality of semiconductor chips mounted over the die pad and the substrate, bonding wires that connect chip electrode pads of the semiconductor chip and their corresponding semiconductor chip connecting first and second electrode pads of the substrate, and a sealing portion which covers these and is provided so as to expose parts of leads.

Abstract: A stacked type chip package structure including a backplate, a circuit substrate, a first chip, a second chip, and a conductive film is provided. The backplate comprises a circuit layer. The circuit substrate is disposed on the backplate, and has an upper surface and an opposite lower surface. Besides, the circuit substrate has a receiving hole corresponding to the backplate. The first chip is disposed inside the receiving hole, and the first chip is electrically connected to the circuit substrate through the circuit layer of the backplate. The second chip is disposed above the first chip, and is electrically connected to the circuit substrate. The conductive film is disposed between the first chip and the second chip, wherein the conductive film is electrically connected to a ground of the circuit substrate.

Abstract: A stacked type semiconductor device includes semiconductor devices, interposers by which the semiconductor devices are stacked, the interposers having electrodes provided on sides thereof, and a connection substrate connecting the electrodes together. The electrodes provided on the sides of the interposers may be connected to the connection substrate by one of an electrically conductive adhesive or an anisotropically conductive film.

Abstract: A POP (Package-On-Package) semiconductor device with encapsulating protection of soldered joints between the external leads, primarily comprises a plurality of stacked semiconductor packages and dielectric coating. Each semiconductor package includes at least a chip, a plurality of external leads of leadframe, and an encapsulant where the external leads are exposed and extended from a plurality of sides of the encapsulant. Terminals of a plurality external leads of a top semiconductor package are soldered to the soldered regions of the corresponding external leads of a bottom semiconductor package. The dielectric coating is disposed along the sides of the encapsulant of the bottom semiconductor package to connect the soldered points between the external leads and to partially or completely encapsulate the soldering materials so that the stresses between the soldered joints can be dispersed and no electrical shorts happen.

Abstract: A semiconductor device formed by mutually connecting a first semiconductor chip with second and third semiconductor chips arranged side by side, with the active surface of the first chip faced to those of the second and third chip. Both the second and third semiconductor chips have functional elements on their active surface. The first semiconductor chip has, in its active surface, a wiring for connecting the second semiconductor chip and the third semiconductor chip, and a terminal for external connection on its surface opposite to its active surface.

Abstract: An integrated circuit package-on-package system includes: providing a base substrate having a central opening; attaching a bottom die below the base substrate partially covering the central opening, the bottom die connected through the central opening to a top surface of the base substrate; attaching a top die above the base substrate partially covering the central opening; attaching external conductive interconnections to a base bottom surface of the base substrate; and molding an encapsulant leaving the external conductive interconnections partially exposed.

Abstract: An aspect of the semiconductor device comprising a package substrate which has a plurality of pads to which a power supply voltage is applied on an upper surface thereof, a first memory chip which is arranged on the package substrate and has a first power supply pad provided on a first side and a second power supply pad provided on a second side perpendicular to the first side, and a second memory chip which is translated in a direction along which the first and second power supply pads of the first memory chip are exposed, arranged on the first memory chip, and has the same structure as the first memory chip, wherein the first and second power supply pads are provided at diagonal corners of the first memory chip, respectively.

Abstract: An integrated circuit package system that includes: providing an electrical interconnect system including a support structure and a lead-finger system; stacking a first device over the support structure; stacking a second device over the first device; connecting the first device and the second device to the lead-finger system; stacking a dummy device over the second device; and exposing a support structure bottom side and a dummy device top side for thermal dissipation.

Abstract: Systems and methods for packaging integrated circuit chips in castellation wafer level packaging are provided. The active circuit areas of the chips are coupled to castellation blocks and, depending on the embodiment, input/output pads. The castellation blocks and input/output pads are encapsulated and held in place by an encapsulant. When the devices are being fabricated, the castellation blocks and input/output pads are sawed through. If necessary, the wafer portion on which the devices are fabricated may be thinned. The packages may be used as a leadless chip carrier package or may be stacked on top of one another. When stacked, the respective contacts of the packages are preferably coupled. Data may be written to, and received from, packaged chips when a chip is activated. Chips may be activated by applying the appropriate signal or signals to the appropriate contact or contacts.

Abstract: Chips are stacked and mounted on a circuit board having external connection electrodes and mounted thereon by wire bonding. At least one of the chips stacked on the chip includes overhung portions each of which has a start point inside bonding pads, is made thinner in a direction towards the outer periphery to an end point reaching the side wall and forms a space used to accommodate ball bonding portions between the overhung portion and the main surface of the chip arranged in the lower stage on a backside corresponding in position to the bonding pads, and insulating members formed to cover the overhung portions and prevent bonding wires of the chip arranged in the lower stage from being brought into contact with the upper-stage chip.

Abstract: A stacked die package system including forming a bottom package including a bottom substrate and a bottom die mounted and electrically connected under the bottom substrate and forming a top package including a top substrate and a top die mounted and electrically connected over the top substrate. Mounting the top package by the top substrate over the bottom substrate and electrically connecting the bottom and top substrates. Mounting system electrical connectors under the bottom substrate adjacent the bottom die.

Abstract: The present invention provides a system and method for selectively stacking and interconnecting leaded packaged integrated circuit devices with connections between the feet of leads of an upper IC and the upper shoulder of leads of a lower IC while conductive transits that implement stacking-related intra-stack connections between the constituent ICs are implemented in multi-layer interposers or carrier structures oriented along the leaded sides of the stack, with selected ones of the conductive transits electrically interconnected with other selected ones of the conductive transits.

Abstract: A circuit board includes a substrate including electrode patterns formed thereon, first chip components mounted on the substrate and a second chip component mounted on a side of electrodes of the first chip components opposite from the substrate. The second chip component is bonded at one electrode to an electrode of the first chip component and is also bonded at the other electrode to an electrode of the first chip component. By stacking chip components in plural stages, it is possible to mount chip components with a high density on the substrate, thereby enabling reduction of the size of the circuit board.

Abstract: In a multi-chip package having vertically stacked semiconductor integrated circuits (chips), a heat transmitting conductive plate (5) can be interposed between a lower layer semiconductor chip (3) and an upper layer semiconductor chip (4) and connected to a ground wiring of a substrate (2) through a bonding wire (9). A heating transmitting conductive plate (5) at the ground potential can block propagation of noise between the lower layer semiconductor chip (3) and upper layer semiconductor chip (4). Thus, the addition of noise to signals of an analog circuit in the upper layer semiconductor chip (4) can be avoided, reducing noise induced malfunctions. Furthermore, heat generated by the lower layer semiconductor chip (3) and upper layer semiconductor chip (4) can be transmitted through contact points with the heat transmitting conductive plate (5) for dissipation therefrom. This can improve heat dissipating capabilities of the semiconductor device (1) contributing to more stable operation.

Abstract: A method of manufacturing photo couplers is provided. At first, a receiver lead-frame array is cut from a lead-frame matrix having a transmitter lead-frame array and the receiver lead-frame array. Then, the receiver lead-frame array is overturned and placed on the lead-frame matrix to allow light-receiver elements on the receiver lead-frame array to face light-emitting elements on the transmitter lead-frame array of the lead-frame matrix. Finally, the receiver lead-frame array and the lead-frame matrix are connected.

Abstract: An interposer may include a base substrate supporting an array of conductive lands. The conductive land may have an identical shape and size. The conductive lands may be provided at regular intervals on the base substrate. The conductive land pitch may be determined such that adjacent conductive lands may be electrically connected by one end of an electric connection member. Alternatively, each conductive land may provide respective bonding locations to which ends of two different electric connection members may be bonded. A stacked chip package may include an interposer that may be fabricated by cutting an interposer to size. In the stacked chip package, electrical connections may be made through the interposer between an upper semiconductor chip and a package substrate, between the upper semiconductor chip and a lower semiconductor chip, and/or between the lower semiconductor chip and the package substrate.

Abstract: A stacked package structure with leadframe having bus bar, comprising: a leadframe composed of a plurality of inner leads arranged in rows facing each other, a plurality of outer leads, and a die pad, in which the die pad is provided between the inner leads and is vertically distant from the inner leads; a bus bar being provided between the inner leads and the die pad; an offset chip-stacked structure stacked by a plurality of chips, the offset chip-stacked structure being fixedly connected to a first surface of the die pad and electrically connected to the inner leads; and an encapsulant covering the offset chip-stacked structure, the inner leads, the first surface of die pad, and the upper surface of bus bar, the second surface of die pad and the lower surface of bus bar being exposed and the outer leads extending out of the encapsulant.

Abstract: Provided is a packaging substrate with a heat-dissipating structure, including a core layer with a first surface and an opposite second surface having a first metal layer and a second metal layer respectively. Portions of the first metal layer are exposed from a second cavity penetrating the core layer and second metal layer. Portions of the second metal layer are exposed from a first cavity penetrating the core layer and first metal layer. Semiconductor chips each having an active surface with electrode pads thereon and an opposite inactive surface are received in the first and second cavities and attached to the second metal layer and the first metal layer respectively. Conductive vias disposed in build-up circuit structures electrically connect to the electrode pads of the semiconductor chips. A heat-dissipating through hole penetrating the core layer and build-up circuit structures connects the metal layers and contact pads.

Abstract: A stack type semiconductor chip package includes a first wafer mold, a protection substrate, and a second wafer mold that are stacked in a wafer level process. The first wafer mold includes a first chip having first pads and a first mold layer encapsulating the first chip. The protection substrate is placed on the first wafer mold, is mechanically bonded with the first wafer mold using a first adhesive layer, and includes wiring layers facing the first pads. The second wafer mold is placed under the first wafer mold, is mechanically bonded with the first wafer mold using a second adhesive layer, and includes a second chip having second pads, and a second mold layer encapsulating the second chip. First vias electrically connect the wiring layers of the protection substrate with the second pads. Second vias electrically connect the wiring layers of the protection substrate with external connection terminals.

Abstract: Flip chip packages formed at a wafer level on semiconductor wafers for electronic systems provide convenient prepackaging. The package, in one embodiment, includes an adhesive layer applied to an active side of the wafer. The adhesive layer has openings to permit access to the conductive pads on each die. A conductive material substantially fills the openings. A pre-packaged die diced from the semiconductor wafer is mounted to a support wherein the conductive material effects electrical interconnection between the conductive pads on the die and receiving conductors on the support. The pre-packaged die can be coupled to a processor for an electronic system. To provide greater mounting densities, two or more dice may be coupled with the adhesive layer providing a covering for the two or more dice. The prepackaged chip with two or more dice may be coupled to a processor reducing the volume needed in an electronic system.

Abstract: Embodiments of the present invention relate to configurable inputs and/or outputs for memory and memory stacking applications. More specifically, embodiments of the present invention include memory devices that include a die having a circuit configured for enablement by a particular signal, an input pin configured to receive the particular signal, and a path selector configured to selectively designate a signal path to the circuit from the input pin.

Abstract: The present invention provides a semiconductor device and a fabrication method therefor, the semiconductor device including a first semiconductor chip (20) disposed on a substrate (10), a first sealing resin (26) sealing the first semiconductor chip (20), a built-in semiconductor device (30) disposed on the first sealing resin (26), and a second sealing resin (36) sealing the first sealing resin (26) and the built-in semiconductor device (30) and covering a side surface (S) of the substrate (10). According to an aspect of the present invention, it is possible to provide a high-quality semiconductor device and a fabrication method therefor, in which downsizing and cost reduction can be realized.

Abstract: A multi-chip electronic package comprised of a plurality of integrated circuit chips secured together in a stack formation. The chip stack is hermetically sealed in an enclosure. The enclosure comprises a pressurized, thermally conductive fluid, which is utilized for cooling the enclosed chip stack. A process and structure is proposed that allows for densely-packed, multi-chip electronic packages to be manufactured with improved heat dissipation efficiency, thus improving the performance and reliability of the multi-chip electronic package.

Abstract: A thin, planar semiconductor device having electrodes on both surfaces is disclosed. This semiconductor device is provided with an IC chip and a wiring layer having one side that is electrically connected to surface electrodes of the IC chip. On this surface of the wiring layer, conductive posts are provided on wiring of the wiring layer, and an insulating resin covers all portions not occupied by the IC chip and conductive posts. The end surfaces of the conductive posts are exposed from the insulating resin and are used as first planar electrodes. In addition, a resist layer is formed on the opposite surface of the wiring layer. Exposed portions are formed in the resist layer to expose desired wiring portions of the wiring layer. These exposed portions are used as second planar electrodes. Stacking semiconductor devices of this construction enables an improvement in the integration of semiconductor integrated circuits.

Abstract: A substrate includes first and second regions over which first and second semiconductor devices are to be respectively positioned. The first region is located at least partially within the second region. Contact areas are located external to the first region but within the second region. In one embodiment, in which semiconductor devices are to be stacked over and secured to the substrate in a flip-chip type arrangement, the contact areas correspond to bond pads of an upper, second semiconductor device, while other contact areas located within the first region correspond to bond pads of a lower, first semiconductor device. In another embodiment, the contact areas correspond to bond pads of the first semiconductor device, which are electrically connected thereto by way of laterally extending discrete conductive elements, while other contact areas that are located external to the second region correspond to bond pads of the upper, second semiconductor device.

Abstract: An integrated circuit package system includes providing a leadframe, forming an aperture within the leadframe, mounting an integrated circuit package over or under the aperture, and mounting a die over the integrated circuit package with the die located within the aperture.